CN204696136U - A kind of Nano thin film solar cell of high conversion - Google Patents
A kind of Nano thin film solar cell of high conversion Download PDFInfo
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- CN204696136U CN204696136U CN201520409273.1U CN201520409273U CN204696136U CN 204696136 U CN204696136 U CN 204696136U CN 201520409273 U CN201520409273 U CN 201520409273U CN 204696136 U CN204696136 U CN 204696136U
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Abstract
The utility model discloses a kind of Nano thin film solar cell of high conversion, Nano thin film solar cell comprises transparent substrates, front electrode oxidic, transparent, conductive layers, preliminary sedimentation lamination, amorphous silicon layer, central reflector layer, microcrystal silicon layer, back electrode oxidic, transparent, conductive layers and reflection encapsulated layer, and described front electrode oxidic, transparent, conductive layers, preliminary sedimentation lamination, amorphous silicon layer, central reflector layer, microcrystal silicon layer, back electrode oxidic, transparent, conductive layers, reflection encapsulated layer deposit superposition on the transparent substrate successively.The Nano thin film solar cell of high conversion of the present utility model has the feature of high conversion efficiency, high stability, applicable suitability for industrialized production.
Description
Technical field
The utility model relates to area of solar cell, particularly a kind of nano silicon-based overlapping thin film solar battery.
Background technology
Silicon-based film solar cells has that materials are few, energy consumption is low, can prepare the solar cell of p-i-n type or n-i-p type structure on the cheap substrate such as glass, stainless steel and plastics, these features make silicon-based film solar cells become the hope reducing manufacture of solar cells cost further.But, because amorphous silicon material has Staebler-Wronski effect, cause the stability of silicon-based film solar cells to need to improve, and the light stable photoelectric transformation efficiency of the amorphous silicon unijunction solar cell of industrialization is now also lower.Therefore, whether the photoelectric conversion efficiency how improving silicon-based film solar cells becomes this battery can the key of extensive development.
For the above problem, the researcher of solar cell proposes overlapping thin film solar battery, becomes the effective way improved silicon-based film solar cells stability and improve photoelectric conversion efficiency.Overlapping thin film solar battery refers to be tied by least two p-i-n or n-i-p tie the superimposed battery formed.Because the thickness of amorphous silicon layer in lamination solar cell wants much thin relative to unijunction solar cell, therefore effectively can reduce the light-induced degradation of lamination solar cell, and improve stability.In addition, use the intrinsic layer that the material of different optical band gap is tied respectively as the silica-based p-i-n knot of amorphous in lamination solar cell or n-i-p, the absorption of solar cell to solar spectrum can be widened, thus effectively improve the light stable photoelectric transformation efficiency of solar cell.In overlapping thin film solar battery, most is representative, also the most potential, is amorphous silicon/microcrystalline silicon tandem thin-film solar cells.
Though amorphous silicon/microcrystalline silicon tandem thin-film solar cells realizes suitability for industrialized production, but still exist core starting materials monopolize by external main Ji Jia giant company and cause the shortcomings such as the prices of raw and semifnished materials are expensive, stable processing technique is not good, conversion efficiency is not high, above shortcoming causes the cost of electricity-generating of solar cell still apparently higher than traditional energy cost of electricity-generating.Therefore, how to reduce the production cost of amorphous silicon/microcrystalline silicon tandem thin-film solar cells, improve suitability for industrialized production stability and conversion efficiency become this battery whether can the another key point of extensive development.
Utility model content
Main object of the present utility model there are provided the amorphous silicon/microcrystalline silicon tandem thin-film solar cells of a kind of large area, high conversion efficiency, high stability, applicable suitability for industrialized production, and has been applied in actual production.
The utility model can be achieved through the following technical solutions:
The utility model discloses a kind of Nano thin film solar cell of high transformation efficiency, comprise transparent substrates, front electrode oxidic, transparent, conductive layers, preliminary sedimentation lamination, amorphous silicon layer, central reflector layer, microcrystal silicon layer, back electrode oxidic, transparent, conductive layers and reflection encapsulated layer, described front electrode oxidic, transparent, conductive layers, preliminary sedimentation lamination, amorphous silicon layer, central reflector layer, microcrystal silicon layer, back electrode oxidic, transparent, conductive layers, reflection encapsulated layer deposit superposition on the transparent substrate successively.
Described amorphous silicon layer comprises amorphous silicon compound p layer, amorphous silicon battery resilient coating, amorphous silicon compound i layer and amorphous silicon compound n layer, and described amorphous silicon compound p layer, amorphous silicon battery resilient coating, amorphous silicon compound i layer, amorphous silicon compound n layer deposit successively and be superimposed upon described preliminary sedimentation build-up surface.
Described central reflector layer comprises reflector and efficient tunnelling composite junction, described reflector comprises the μ c-SiOx:H layer of N-shaped doping and the μ c-Si:H layer of N-shaped doping, the μ c-SiOx:H layer of described N-shaped doping, the μ c-Si:H layer of N-shaped doping are bilayer, the μ c-SiOx:H layer of described N-shaped doping, the μ c-Si:H layer of N-shaped doping are interlaced with each other, and the μ c-SiOx:H layer of described N-shaped doping, the μ c-Si:H layer of N-shaped doping, efficient tunnelling composite junction deposition are superimposed upon described amorphous silicon layer surface.
Described microcrystal silicon layer comprises microcrystal silicon compound p layer and microcrystal silicon compound i layer, and described microcrystal silicon compound p layer and microcrystal silicon compound i layer deposit successively and be superimposed upon described central reflector layer surface.
Described amorphous silicon deposition p layer comprises a-SiOx:H layer and the a-SiCx:H layer of p-type doping, described amorphous silicon n-layer comprises the a-Si:H layer of N-shaped doping and the μ c-Si:H layer of N-shaped doping, the a-SiOx:H layer of described p-type doping and a-SiCx:H layer deposit successively and are superimposed upon described preliminary sedimentation build-up surface, and the a-Si:H layer of described N-shaped doping and the μ c-Si:H layer of N-shaped doping deposit successively and be superimposed upon described amorphous silicon compound i layer surface.
Described microcrystal silicon compound p layer comprises μ c-Si:H layer, μ c-SiOx:H layer and the μ c-Si:H layer that p-type is adulterated, described microcrystal silicon compound i layer comprises μ c-Si:H i layer, a-Si:H i layer, and described compound p layer, compound i layer, micro-crystalline silicon cell n layer deposit successively and be superimposed upon described central reflector layer surface.
Described front electrode oxidic, transparent, conductive layers and back electrode oxidic, transparent, conductive layers include Seed layer and Bulk layer.
Described preliminary sedimentation lamination is that using plasma strengthens chemical vapor deposition, and the material of described preliminary sedimentation lamination comprises one or two or more kinds in a-Si:H, a-SiCx:H and a-SiOx:H.
Further, described reflection encapsulated layer comprises copolymer and the glass back plate of high reflectance.The copolymer of high reflectance comprises white EVA, PVB, is mainly white EVA.Glass back plate comprises non-toughened glass, semi-tempered glass and toughened glass,
In actual applications, described thin-film solar cells can be made as how sub-serial battery structure and how sub-cell parallel structure.How sub-cell parallel structure comprises at least 2 large-area cell parallels, and each large-area battery is at least formed by the sub-serial battery of 2 joint small sizes.
A preparation method for the Nano thin film solar cell of high transformation efficiency, specifically comprises following operation:
Front electrode oxidic, transparent, conductive layers and back electrode oxidic, transparent, conductive layers are the boron-doping zinc oxide films adopting low-pressure chemical vapor deposition to prepare, described boron-doping zinc oxide film comprises boron-doping zinc oxide film and bulk layer, described seed layer B2H6 range of flow controls at 90 ~ 400sccm, thickness range is 50 ~ 300 nanometers, described bulk layer thickness scope is 1500 ~ 2000 nanometers, the nephelometric turbidity unit scope of 600 nano wave lengths is 25 ~ 45%, electrical resistivity range is 5.0 × 10-4 Ω cm ~ 9.0 × 10-3 Ω cm, the mean transmissivity scope of 400 ~ 1100 nano wave lengths is 78% to 85%,
Pre-deposition film is that using plasma strengthens chemical vapor deposition, namely described preliminary sedimentation lamination is by inserting in reaction box by the transparent substrates having deposited oxidic, transparent, conductive layers, in 30 minutes inner reaction boxes, pre-deposition is formed, the gas that described preliminary sedimentation lamination uses is SiH4, H2, CH4, CO2, the range of flow used is 4 ~ 7slm, and thicknesses of layers controls at 5 ~ 35nm;
In amorphous silicon layer, the deposit thickness scope of p-type doping a-SiOx:H layer is 1.5 ~ 3.5 nanometers, the deposit thickness scope of p-type doping a-SiCx:H layer is 6 ~ 10 nanometers, the deposit thickness scope of a-SiCx:H layer is 5 ~ 9 nanometers, the high-quality i layer that compound i layer is deposited by low speed respectively and the stacked deposition that adds of the i of high speed deposition form, the deposition pressure scope of the high-quality i layer of described low speed deposition is 0.1 ~ 0.6mbar, deposition rate scope is 0.1 ~ 0.2 nm/sec, gas flow scope is 4 ~ 6slm, the deposition pressure scope of the i layer of described high speed deposition is 0.8 ~ 1.5mbar, deposition rate scope is 0.3 ~ 0.4 nm/sec, air flow rate scope is 6 ~ 35slm, described compound i layer thickness scope is 150 ~ 200 nanometers, the above high-quality i layer of low speed deposition of 10 nanometer and the i layer of high speed deposition is at least comprised in described compound i layer, N-shaped doping a-Si:H layer thickness scope is 3 ~ 5 nanometers, the thickness range of the μ c-Si:H layer of N-shaped doping is 8 ~ 12 nanometers, the deposition pressure scope of the a-Si:H layer of described N-shaped doping is 0.8 ~ 1.5mba, air flow rate scope is 2 ~ 9slm, deposition pressure scope is 2.5 ~ 3.8mbar, air flow rate scope is 75 ~ 90slm,
Central reflector layer total thickness is 25 ~ 60 nanometers, ranges of indices of refraction is 0.18 to 0.22, the μ c-Si:H layer thickness scope of central reflector layer is 0.6 ~ 1.0 nanometer, efficient tunnelling composite junction with PH3, CO2 and H2 for reacting gas under plasmoid, surface treatment is carried out to reflector after formed, wherein PH3 and CO2 mixed proportion is 1:100 to 1:500, the pressure limit of plasma treatment is 0.3 ~ 0.7mbar, and the power density scope of plasma treatment is 0.03W/cm2 ~ 0.04 W/cm2;
In microcrystal silicon layer, p-type doping μ c-Si:H depth scope is 2 ~ 4 nanometers, the thickness range of p-type doping μ c-Si:H layer is 4 ~ 6 nanometers, the doping rate of p-type doping μ c-Si:H layer is 1.5 ~ 3 times of p-type doping μ c-Si:H layer, the thickness range of p-type doping μ c-SiOx:H layer is 10 ~ 30 nanometers, ranges of indices of refraction is 2.5 to 3.5, compound i layer thickness scope is 600 ~ 1200 nanometers, described compound i layer is made up of the rete of 3 to 7 layers of different H2 dilution factor [H2/ (H2+SiH4)], the crystallization rate scope in described thicknesses of layers direction remains on 55 ~ 75%, dilution range 95 ~ 98%, amorphous silicon i-layer is the high-quality i layer that low speed deposition is formed, described high-quality i layer deposition pressure scope is 0.1 ~ 0.5mbar, deposition rate scope is 0.1 nm/sec to 0.2 nm/sec, thickness range is 15 ~ 25 nanometers, the material of micro-crystalline silicon cell n layer is the μ c-SiOx:H of N-shaped doping, and the thickness range of described N-shaped doping μ c-SiOx:H layer is 60 ~ 100 nanometers, ranges of indices of refraction is 1.8 ~ 2.2.
Further, in the deposition of amorphous silicon layer, the deposition pressure scope of the high-quality i layer of described low speed deposition is 0.2 ~ 0.4mbar, the deposition pressure scope of the i layer of described high speed deposition is 1.0 ~ 1.3mbar, and the deposition pressure scope of the a-Si:H layer of described N-shaped doping is 1.0 ~ 1.3mbar, deposition pressure scope is 3 ~ 3.5mbar; Air flow rate scope is 75-90slm; In described central reflector layer, described reflector total thickness is 30 ~ 45 nanometers, ranges of indices of refraction is 0.19 ~ 0.21.
Main technological merit of the present utility model there are provided the large area of complete set, high conversion efficiency, high stability, is applicable to the amorphous silicon/microcrystalline silicon tandem thin-film solar cells preparation method of suitability for industrialized production, described preparation method has been applied in industrial production, and strong has promoted the development of thin-film solar cells.
Accompanying drawing explanation
Accompanying drawing 1 be the Nano thin film solar cell of a kind of high transformation efficiency of the utility model overall film layer structure schematic diagram;
Accompanying drawing 2 is the structural representation of the Nano thin film front electrodes of solar cells oxidic, transparent, conductive layers of a kind of high transformation efficiency of the utility model;
Accompanying drawing 3 is the structural representation of the Nano thin film solar cell back electrode oxidic, transparent, conductive layers of a kind of high transformation efficiency of the utility model;
Accompanying drawing 4 is the structural representation of the Nano thin film solar cell middle reflection conductive oxide layer of a kind of high transformation efficiency of the utility model;
Accompanying drawing 5 is the Nano thin film solar cell laser grooving and scribing schematic diagram of a kind of high transformation efficiency of the utility model;
Accompanying drawing 6 is the Nano thin film solar cell finished product test I-V curve chart of a kind of high transformation efficiency of the utility model;
In accompanying drawing, mark comprises: 100, transparent substrates, 200, front electrode oxidic, transparent, conductive layers, 201, Seed layer, 202, bulk layer, 300, preliminary sedimentation lamination, 400, amorphous silicon layer, 401, a-SiOx:H layer, 402, a-SiCx:H layer, 403, amorphous silicon battery resilient coating, 404, amorphous silicon compound i layer, 405, a-Si:H layer, 406, μ c-Si:H layer, 500, central reflector layer, 511, μ c-SiOx:H layer, 512, μ c-Si:H layer, 520, efficient tunnelling composite junction, 600, microcrystal silicon layer, 611, μ c-Si:H layer, 612, μ c-SiOx:H layer, 613, μ c-Si:H layer, 621, microcrystal silicon compound i layer, 622, amorphous silicon i-layer, 623, micro-crystalline silicon cell n layer, 700, back electrode oxidic, transparent, conductive layers, 701, Seed layer, 702, bulk layer, 800, reflection encapsulated layer.
Embodiment
In order to make those skilled in the art person understand the technical solution of the utility model better, below in conjunction with embodiment and accompanying drawing, the utility model product is described in further detail.
As shown in Figure 1, the Nano thin film solar cell that the utility model discloses a kind of high transformation efficiency comprises transparent substrates 100, front electrode oxidic, transparent, conductive layers 200, preliminary sedimentation lamination 300, amorphous silicon layer 400, central reflector layer 500, microcrystal silicon layer 600, back electrode oxidic, transparent, conductive layers 700 and reflection encapsulated layer 800, described front electrode oxidic, transparent, conductive layers 200, preliminary sedimentation lamination 300, amorphous silicon layer 400, central reflector layer 500, microcrystal silicon layer 600, back electrode oxidic, transparent, conductive layers 700, reflection encapsulated layer 800 deposits successively and is superimposed upon in described transparent substrates 100.
Described amorphous silicon layer 400 comprises amorphous silicon compound p layer, amorphous silicon battery resilient coating 403, amorphous silicon compound i layer 404 and amorphous silicon compound n layer, and described amorphous silicon compound p layer, amorphous silicon battery resilient coating 403, amorphous silicon compound i layer 404, amorphous silicon compound n layer deposit successively and be superimposed upon described preliminary sedimentation lamination 300 surface.
Described central reflector layer 500 comprises reflector and efficient tunnelling composite junction 520, described reflector comprises the μ c-SiOx:H layer 511 of N-shaped doping and the μ c-Si:H layer 512 of N-shaped doping, the μ c-SiOx:H layer 511 of described N-shaped doping, the μ c-Si:H layer 512 of N-shaped doping are bilayer, the μ c-SiOx:H layer 511 of described N-shaped doping, the μ c-Si:H layer 512 of N-shaped doping are interlaced with each other, and the μ c-SiOx:H layer 511 of described N-shaped doping, the μ c-Si:H layer 512 of N-shaped doping, efficient tunnelling composite junction 520 deposition are superimposed upon described amorphous silicon layer 400 surface.
Described microcrystal silicon layer 600 comprises microcrystal silicon compound p layer and microcrystal silicon compound i layer, and described microcrystal silicon compound p layer and microcrystal silicon compound i layer deposit successively and be superimposed upon described central reflector layer 500 surface.
Described amorphous silicon deposition p layer comprises a-SiOx:H layer 401 and the a-SiCx:H layer 402 of p-type doping, described amorphous silicon n-layer comprises the a-Si:H layer 405 of N-shaped doping and the μ c-Si:H layer 406 of N-shaped doping, the a-SiOx:H layer 401 of described p-type doping and a-SiCx:H layer 402 deposit successively and are superimposed upon described efficient tunnelling composite junction 520 surface, and the a-Si:H layer 405 of described N-shaped doping and the μ c-Si:H layer 406 of N-shaped doping deposit successively and be superimposed upon described amorphous silicon compound i layer 404 surface.
Described microcrystal silicon compound p layer comprises μ c-Si:H layer (611), μ c-SiOx:H layer (612) and the μ c-Si:H layer (613) that p-type is adulterated, described microcrystal silicon compound i layer comprises μ c-Si:H i layer (622), a-Si:H i layer (623), and described compound p layer, compound i layer (614), micro-crystalline silicon cell n layer (616) deposit successively and be superimposed upon described central reflector layer (500) surface.
Described front electrode oxidic, transparent, conductive layers 200 and back electrode oxidic, transparent, conductive layers 700 include Seed layer 201,701 and Bulk layer 202,702.
Described preliminary sedimentation lamination 300 is that using plasma strengthens chemical vapor deposition, and the material of described preliminary sedimentation lamination 300 comprises one or two or more kinds in a-Si:H, a-SiCx:H and a-SiOx:H.
A preparation method for the Nano thin film solar cell of high transformation efficiency, comprises following treatment process:
Front electrode oxidic, transparent, conductive layers 200 and back electrode oxidic, transparent, conductive layers 700 are the boron-doping zinc oxide films adopting low-pressure chemical vapor deposition to prepare, described boron-doping zinc oxide film comprises seed layer 201, 701 and bulk layer 202, 702, described seed layer 201, the B2H6 range of flow of 701 controls at 90 ~ 400sccm, thickness range is 50 ~ 300 nanometers, described bulk layer 202, the thickness range of 702 is 1500 ~ 2000 nanometers, the nephelometric turbidity unit scope of 600 nano wave lengths is 25 ~ 45%, electrical resistivity range is 5.0 × 10-4 Ω cm ~ 9.0 × 10-3 Ω cm, the mean transmissivity scope of 400 ~ 1100 nano wave lengths is 78% to 85%,
Pre-deposition film is that using plasma strengthens chemical vapor deposition, described preliminary sedimentation lamination 300 is by inserting in reaction box by the transparent substrates 100 having deposited oxidic, transparent, conductive layers, in 30 minutes inner reaction boxes, pre-deposition is formed, the gas that described preliminary sedimentation lamination 300 uses is SiH4, H2, CH4, CO2, the range of flow used is 4 ~ 7slm, and thicknesses of layers controls at 5 ~ 35nm;
In amorphous silicon layer 400, the deposit thickness scope of p-type doping a-SiOx:H layer is 1.5 ~ 3.5 nanometers, the deposit thickness scope of p-type doping a-SiCx:H layer 401 is 6 ~ 10 nanometers, the deposit thickness scope of a-SiCx:H layer 402 is 5 ~ 9 nanometers, the high-quality i layer that compound i layer 404 is deposited by low speed respectively and the stacked deposition that adds of the i of high speed deposition form, the deposition pressure scope of the high-quality i layer of described low speed deposition is 0.1 ~ 0.6mbar, deposition rate scope is 0.1 ~ 0.2 nm/sec, gas flow scope is 4 ~ 6slm, the deposition pressure scope of the i layer of described high speed deposition is 0.8 ~ 1.5mbar, deposition rate scope is 0.3 ~ 0.4 nm/sec, air flow rate scope is 6 ~ 35slm, described compound i layer thickness scope is 150 ~ 200 nanometers, the above high-quality i layer of low speed deposition of 10 nanometer and the i layer of high speed deposition is at least comprised in described compound i layer 404, N-shaped doping a-Si:H layer 405 thickness range is 3 ~ 5 nanometers, the thickness range of the μ c-Si:H layer 406 of N-shaped doping is 8 ~ 12 nanometers, the deposition pressure scope of the a-Si:H layer 405 of described N-shaped doping is 0.8 ~ 1.5mba, air flow rate scope is 2 ~ 9slm, deposition pressure scope is 2.5 ~ 3.8mbar, air flow rate scope is 75 ~ 90slm,
Central reflector layer 500 total thickness is 25 ~ 60 nanometers, ranges of indices of refraction is 0.18 to 0.22, the μ c-Si:H layer thickness scope of central reflector layer 500 is 0.6 ~ 1.0 nanometer, efficient tunnelling composite junction 520 with PH3, CO2 and H2 for reacting gas under plasmoid, surface treatment is carried out to reflector after formed, wherein PH3 and CO2 mixed proportion is 1:100 to 1:500, the pressure limit of plasma treatment is 0.3 ~ 0.7mbar, and the power density scope of plasma treatment is 0.03W/cm2 ~ 0.04 W/cm2;
In microcrystal silicon layer 600, p-type doping μ c-Si:H layer 611 thickness range is 2 ~ 4 nanometers, the thickness range of p-type doping μ c-Si:H layer 613 is 4 ~ 6 nanometers, the doping rate of p-type doping μ c-Si:H layer 611 is 1.5 ~ 3 times of p-type doping μ c-Si:H layer 613, the thickness range of p-type doping μ c-SiOx:H layer 612 is 10 ~ 30 nanometers, ranges of indices of refraction is 2.5 to 3.5, compound i layer 621 thickness range is 600 ~ 1200 nanometers, described compound i layer 621 is made up of the rete of 3 to 7 layers of different H2 dilution factor [H2/ (H2+SiH4)], the crystallization rate scope in described thicknesses of layers direction remains on 55 ~ 75%, dilution range 95 ~ 98%, amorphous silicon i-layer 622 is high-quality i layers that low speed deposition is formed, described high-quality i layer deposition pressure scope is 0.1 ~ 0.5mbar, deposition rate scope is 0.1 nm/sec to 0.2 nm/sec, thickness range is 15 ~ 25 nanometers, the material of micro-crystalline silicon cell n layer 623 is μ c-SiOx:H of N-shaped doping, and the thickness range of described N-shaped doping μ c-SiOx:H layer is 60 ~ 100 nanometers, ranges of indices of refraction is 1.8 ~ 2.2.
Further, in the deposition of amorphous silicon layer 400, the deposition pressure scope of the high-quality i layer of described low speed deposition is 0.2 ~ 0.4mbar, the deposition pressure scope of the i layer of described high speed deposition is 1.0 ~ 1.3mbar, and the deposition pressure scope of the a-Si:H layer 405 of described N-shaped doping is 1.0 ~ 1.3mbar, deposition pressure scope is 3 ~ 3.5mbar; Air flow rate scope is 75-90slm;
In described central reflector layer 500, described reflector total thickness is 30 ~ 45 nanometers, ranges of indices of refraction is 0.19 ~ 0.21.
As shown in Figure 5, concrete manufacturing process comprises the following steps:
Clean ultra-clear glasses substrate is proceeded in low pressure chemical vapor deposition equipment and deposits double-deck front electrode oxidic, transparent, conductive layers 200, first deposit highly doped seed layer 201 first deposition chamber, deposit low-doped bulk layer 202 in the second to six deposition chamber afterwards.
The laser of 355nm wavelength is adopted to carry out the making of first time laser grooving and scribing P1.The transparent substrates 100 completing first time laser grooving and scribing P1 is proceeded in cleaning equipment, cleans.Then using plasma strengthens chemical gaseous phase depositing process, carries out the deposition of preliminary treatment rete preliminary sedimentation lamination 300 at the reaction box of amorphous silicon layer 400.The transparent substrates 100 completing first time laser grooving and scribing P1 is proceeded in amorphous silicon battery reaction box, deposition a-Si layer.Successively with SiH4, TMB, H2, CO2 a-SiOx:H layer for reacting gas deposition p doping; With SiH4, TMB, H2, CH4 a-SiCx:H layer for reacting gas deposition p doping; With SiH4, H2, PH3 for reacting gas buffer layer; With SiH4, H2 for reacting gas first low speed depositing high-quality intrinsic i layer, high speed deposition intrinsic i layer afterwards; With the a-Si:H layer that SiH4, H2, PH3 adulterate for reacting gas depositing n-type; With the μ c-Si:H layer that SiH4, H2, PH3 adulterate for reacting gas depositing n-type; With the μ c-SiOx:H layer that SiH4, H2, PH3, CO2 adulterate for reacting gas depositing n-type; With the μ c-Si:H layer that SiH4, H2, PH3 adulterate for reacting gas depositing n-type; With the μ c-SiOx:H layer that SiH4, H2, PH3, CO2 adulterate for reacting gas depositing n-type; With the μ c-Si:H layer that SiH4, H2, PH3 adulterate for reacting gas depositing n-type; Efficient tunnelling composite junction 520 is formed for reacting gas carries out surperficial highly dopedization process with H2, PH3, CO2.The transparent substrates 100 having deposited amorphous silicon layer is proceeded in micro-crystalline silicon cell reaction box, deposition Uc-Si layer.Successively with SiH4, TMB, H2 μ c-Si:H layer E01 for reacting gas deposition p doping; With SiH4, TMB, H2, CO2 μ c-SiOx:H layer for reacting gas deposition p doping; With SiH4, TMB, H2 μ c-Si:H layer for reacting gas deposition p doping; With SiH4, H2 for reacting gas deposition intrinsic micro crystal silicon i layer; With SiH4, H22 for reacting gas deposition intrinsic amorphous silicon i-layer; With the μ c-SiOx:H layer that SiH4, H2, PH3, CO2 adulterate for reacting gas depositing n-type.
Then the laser of 532nm wavelength is adopted to carry out second time laser grooving and scribing P2.The substrate completing P2 delineation is proceeded in low pressure chemical vapor deposition equipment, first deposits highly doped seed layer first deposition chamber, deposit low-doped bulk layer in the second to six deposition chamber afterwards.
Then the laser of 532nm wavelength is adopted to carry out third time laser grooving and scribing P3.
The laser of 1064nm wavelength is finally adopted to play a minor role process to edges of substrate.
Carry out Electrode connection and laminating packaging, obtain battery component, carry out I-V test, concrete test curve as shown in Figure 6.In figure 6, it is 1100mm × 1300mm that the power output of battery reaches 154.7W battery size, and outdoor test optical attenuation is lower than 9%.
The above, be only preferred embodiment of the present utility model, not does any pro forma restriction to the utility model; The those of ordinary skill of all industry all can shown in by specification accompanying drawing and the above and implement the utility model swimmingly; But all those skilled in the art are not departing within the scope of technical solutions of the utility model, disclosed above technology contents can be utilized and make a little change, modify with differentiation equivalent variations, be Equivalent embodiments of the present utility model; Meanwhile, all according to substantial technological of the present utility model to the change of any equivalent variations that above embodiment is done, modify and differentiation etc., within the protection range all still belonging to the technical solution of the utility model.
Claims (9)
1. the Nano thin film solar cell of a high transformation efficiency, it is characterized in that: comprise transparent substrates (100), front electrode oxidic, transparent, conductive layers (200), preliminary sedimentation lamination (300), amorphous silicon layer (400), central reflector layer (500), microcrystal silicon layer (600), back electrode oxidic, transparent, conductive layers (700) and reflection encapsulated layer (800), described front electrode oxidic, transparent, conductive layers (200), preliminary sedimentation lamination (300), amorphous silicon layer (400), central reflector layer (500), microcrystal silicon layer (600), back electrode oxidic, transparent, conductive layers (700), reflection encapsulated layer (800) deposits successively and is superimposed upon in described transparent substrates (100).
2. the Nano thin film solar cell of high transformation efficiency according to claim 1, it is characterized in that: described amorphous silicon layer (400) comprises amorphous silicon compound p layer, amorphous silicon battery resilient coating (403), amorphous silicon compound i layer (404) and amorphous silicon compound n layer, described amorphous silicon compound p layer, amorphous silicon battery resilient coating (403), amorphous silicon compound i layer (404), amorphous silicon compound n layer deposit successively and are superimposed upon described preliminary sedimentation lamination (300) surface.
3. the Nano thin film solar cell of high transformation efficiency according to claim 1 and 2, it is characterized in that: described central reflector layer (500) comprises reflector and efficient tunnelling composite junction (520), described reflector comprises the μ c-SiOx:H layer (511) of N-shaped doping and the μ c-Si:H layer (512) of N-shaped doping, the μ c-SiOx:H layer (511) of described N-shaped doping, the μ c-Si:H layer (512) of N-shaped doping is bilayer, the μ c-SiOx:H layer (511) of described N-shaped doping, the μ c-Si:H layer (512) of N-shaped doping is interlaced with each other, the μ c-SiOx:H layer (511) of described N-shaped doping, the μ c-Si:H layer (512) of N-shaped doping, efficient tunnelling composite junction (520) deposition is superimposed upon described amorphous silicon layer (400) surface.
4. the Nano thin film solar cell of high transformation efficiency according to claim 3, it is characterized in that: described microcrystal silicon layer (600) comprises microcrystal silicon compound p layer, microcrystal silicon compound i layer and microcrystal silicon compound n layer, described microcrystal silicon compound p layer, microcrystal silicon compound i layer and microcrystal silicon compound n layer deposit successively and are superimposed upon described central reflector layer (500) surface.
5. the Nano thin film solar cell of high transformation efficiency according to claim 4, it is characterized in that: described amorphous silicon deposition p layer comprises a-SiOx:H layer (401) and the a-SiCx:H layer (402) of p-type doping, described amorphous silicon n-layer comprises the a-Si:H layer (405) of N-shaped doping and the μ c-Si:H layer (406) of N-shaped doping, the a-SiOx:H layer (401) of described p-type doping and a-SiCx:H layer (402) deposit successively and are superimposed upon described preliminary sedimentation lamination (300) surface, the a-Si:H layer (405) of described N-shaped doping and the μ c-Si:H layer (406) of N-shaped doping deposit successively and are superimposed upon described amorphous silicon compound i layer (404) surface.
6. the Nano thin film solar cell of high transformation efficiency according to claim 5, it is characterized in that: described microcrystal silicon compound p layer comprises μ c-Si:H layer (611), μ c-SiOx:H layer (612) and the μ c-Si:H layer (613) that p-type is adulterated, described microcrystal silicon compound i layer comprises μ c-Si:H i layer (622), a-Si:H i layer (623), and described compound p layer, compound i layer (614), micro-crystalline silicon cell n layer (616) deposit successively and be superimposed upon described central reflector layer (500) surface.
7. the Nano thin film solar cell of high transformation efficiency according to claim 6, is characterized in that: described front electrode oxidic, transparent, conductive layers (200) and back electrode oxidic, transparent, conductive layers (700) include Seed layer (201,701) and Bulk layer (202,702).
8. the Nano thin film solar cell of high transformation efficiency according to claim 7, is characterized in that:
Front electrode oxidic, transparent, conductive layers (200) and back electrode oxidic, transparent, conductive layers (700) are the boron-doping zinc oxide films adopting low-pressure chemical vapor deposition to prepare, described boron-doping zinc oxide film comprises seed layer (201, 701) and bulk layer (202, 702), described seed layer (201, 701) B2H6 range of flow controls at 90 ~ 400sccm, thickness range is 50 ~ 300 nanometers, described bulk layer (202, 702) thickness range is 1500 ~ 2000 nanometers, the nephelometric turbidity unit scope of 600 nano wave lengths is 25 ~ 45%, electrical resistivity range is 5.0 × 10-4 Ω cm ~ 9.0 × 10-3 Ω cm, the mean transmissivity scope of 400 ~ 1100 nano wave lengths is 78% to 85%,
Pre-deposition film is that using plasma strengthens chemical vapor deposition, described preliminary sedimentation lamination (300) is by inserting in reaction box by the transparent substrates (100) having deposited oxidic, transparent, conductive layers, in 30 minutes inner reaction boxes, pre-deposition is formed, the gas that described preliminary sedimentation lamination (300) uses is SiH4, H2, CH4, CO2, the range of flow used is 4 ~ 7slm, and thicknesses of layers controls at 5 ~ 35nm;
In amorphous silicon layer (400), the deposit thickness scope of p-type doping a-SiOx:H layer is 1.5 ~ 3.5 nanometers, the deposit thickness scope of p-type doping a-SiCx:H layer (401) is 6 ~ 10 nanometers, the deposit thickness scope of resilient coating a-SiCx:H layer (402) is 5 ~ 9 nanometers, the stacked deposition that adds of i of the high-quality i layer that compound i layer (404) is deposited by low speed respectively and high speed deposition forms, the deposition pressure scope of the high-quality i layer of described low speed deposition is 0.1 ~ 0.6mbar, deposition rate scope is 0.1 ~ 0.2 nm/sec, gas flow scope is 4 ~ 6slm, the deposition pressure scope of the i layer of described high speed deposition is 0.8 ~ 1.5mbar, deposition rate scope is 0.3 ~ 0.4 nm/sec, air flow rate scope is 6 ~ 35slm, described compound i layer thickness scope is 150 ~ 200 nanometers, the above high-quality i layer of low speed deposition of 10 nanometer and the i layer of high speed deposition is at least comprised in described compound i layer (404), N-shaped doping a-Si:H layer (405) thickness range is 3 ~ 5 nanometers, the thickness range of the μ c-Si:H layer (406) of N-shaped doping is 8 ~ 12 nanometers, the deposition pressure scope of the a-Si:H layer (405) of described N-shaped doping is 0.8 ~ 1.5mba, air flow rate scope is 2 ~ 9slm, deposition pressure scope is 2.5 ~ 3.8mbar, air flow rate scope is 75 ~ 90slm,
Central reflector layer (500) total thickness is 25 ~ 60 nanometers, ranges of indices of refraction is 0.18 to 0.22, the μ c-Si:H layer thickness scope of central reflector layer (500) is 0.6 ~ 1.0 nanometer, efficient tunnelling composite junction (520) with PH3, CO2 and H2 for reacting gas under plasmoid, surface treatment is carried out to reflector after formed, wherein PH3 and CO2 mixed proportion is 1:100 to 1:500, the pressure limit of plasma treatment is 0.3 ~ 0.7mbar, and the power density scope of plasma treatment is 0.03W/cm
2~ 0.04 W/cm
2;
In microcrystal silicon layer (600), p-type doping μ c-Si:H layer (611) thickness range is 2 ~ 4 nanometers, the thickness range of p-type doping μ c-Si:H layer (613) is 4 ~ 6 nanometers, the doping rate of p-type doping μ c-Si:H layer (611) is 1.5 ~ 3 times of p-type doping μ c-Si:H layer (613), the thickness range of p-type doping μ c-SiOx:H layer (612) is 10 ~ 30 nanometers, ranges of indices of refraction is 2.5 to 3.5, compound i layer (621) thickness range is 600 ~ 1200 nanometers, and described compound i layer (621) is by 3 to 7 layers of different H
2dilution factor [H
2/ (H
2+ SiH
4)] rete composition, the crystallization rate scope in described thicknesses of layers direction remains on 55 ~ 75%, dilution range 95 ~ 98%, and amorphous silicon i-layer (622) is the high-quality i layer that low speed deposition is formed; Described high-quality i layer deposition pressure scope is 0.1 ~ 0.5mbar, deposition rate scope is 0.1 nm/sec to 0.2 nm/sec, thickness range is 15 ~ 25 nanometers, the material of micro-crystalline silicon cell n layer (623) is the μ c-SiOx:H of N-shaped doping, and the thickness range of described N-shaped doping μ c-SiOx:H layer is 60 ~ 100 nanometers, ranges of indices of refraction is 1.8 ~ 2.2.
9. the Nano thin film solar cell of high transformation efficiency according to claim 8, it is characterized in that: it is characterized in that: in the deposition of amorphous silicon layer (400), the deposition pressure scope of the high-quality i layer of described low speed deposition is 0.2 ~ 0.4mbar, the deposition pressure scope of the i layer of described high speed deposition is 1.0 ~ 1.3mbar, and the deposition pressure scope of the a-Si:H layer (405) of described N-shaped doping is 1.0 ~ 1.3mbar, deposition pressure scope is 3 ~ 3.5mbar; Air flow rate scope is 75-90slm; In described central reflector layer (500), described reflector total thickness is 30 ~ 45 nanometers, ranges of indices of refraction is 0.19 ~ 0.21.
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| CN117241600A (en) * | 2023-11-14 | 2023-12-15 | 无锡华晟光伏科技有限公司 | Three-junction laminated battery and preparation method thereof |
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| CN117241600A (en) * | 2023-11-14 | 2023-12-15 | 无锡华晟光伏科技有限公司 | Three-junction laminated battery and preparation method thereof |
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