CN204615634U - Insulated gate bipolar transistor is suppressed to turn off the circuit of spike - Google Patents
Insulated gate bipolar transistor is suppressed to turn off the circuit of spike Download PDFInfo
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- CN204615634U CN204615634U CN201520264379.7U CN201520264379U CN204615634U CN 204615634 U CN204615634 U CN 204615634U CN 201520264379 U CN201520264379 U CN 201520264379U CN 204615634 U CN204615634 U CN 204615634U
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- bipolar transistor
- insulated gate
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- 239000004065 semiconductor Substances 0.000 claims description 38
- 230000001052 transient effect Effects 0.000 claims description 20
- 230000001629 suppression Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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Abstract
The utility model provides a kind of circuit suppressing insulated gate bipolar transistor to turn off spike, comprises insulated gate bipolar transistor and negative-feedback circuit, the output of described drive circuit is connected with the grid of described insulated gate bipolar transistor, for driving described insulated gate bipolar transistor conducting or shutoff, the first end of described negative-feedback circuit is connected with the grid of described insulated gate bipolar transistor, second end of described negative-feedback circuit is connected with the auxiliary emitter-base bandgap grading of described insulated gate bipolar transistor, 3rd end of described negative-feedback circuit is connected with the power emitter-base bandgap grading of described insulated gate bipolar transistor, for detecting the pressure drop of the stray inductance between described auxiliary emitter-base bandgap grading and described power emitter-base bandgap grading, the shutoff spike between the collector electrode of described insulated gate bipolar transistor and power emitter-base bandgap grading is suppressed when described insulated gate bipolar transistor turns off.
Description
Technical field
The utility model embodiment relates to electric and electronic technical field, particularly relates to a kind of circuit suppressing insulated gate bipolar transistor to turn off spike.
Background technology
In recent years, insulated gate semiconductor device such as insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) becomes a kind of device with self-switching-off capability be widely used as the representative of third generation power electronic device.It is that 600V and above converter system are as fields such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit and Traction Drives that IGBT can be widely used in direct voltage.
IGBT is by bipolar junction transistor (Bipolar Junction Transistor, and metal-oxide half field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor BJT), MOSFET) the compound full-control type voltage driven type power semiconductor formed, wherein, BJT saturation pressure reduces, current carrying density is large, but drive current is larger, MOSFET driving power is little, switching speed is fast, but conduction voltage drop is large, current carrying density is little, IGBT combines the advantage of above two kinds of devices, have the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspect of BJT concurrently.Therefore, IGBT has the advantages that to be easy to drive, peak current capacity turns off greatly, certainly, switching frequency is high.
The loop of power circuit of IGBT exists a stray inductance L.When IGBT turns off, diminishing fast of cut-off current can produce pressure drop (U=L (di/dt)) in stray inductance, this pressure drop meeting superposes with busbar voltage thus causes the voltage between the Vce(collector electrode of IGBT and power emitter-base bandgap grading) produce one and turn off spike, namely larger current variation speeds di/dt causes higher over-voltage breakdown IGBT, and produces the damage to IGBT.
Summary of the invention
The purpose of this utility model is to solve the problem, and provides a kind of circuit suppressing insulated gate bipolar transistor to turn off spike.The utility model is achieved in that described suppression insulated gate bipolar transistor turns off the circuit of spike,
Comprise insulated gate bipolar transistor and negative-feedback circuit;
The first end of described negative-feedback circuit is connected with the grid of described insulated gate bipolar transistor, second end of described negative-feedback circuit is connected with the auxiliary emitter-base bandgap grading of described insulated gate bipolar transistor, 3rd end of described negative-feedback circuit is connected with the power emitter-base bandgap grading of described insulated gate bipolar transistor, for detecting the pressure drop of the stray inductance between described auxiliary emitter-base bandgap grading and described power emitter-base bandgap grading, suppress the shutoff spike between the collector electrode of described insulated gate bipolar transistor and power emitter-base bandgap grading when described insulated gate bipolar transistor turns off.
Further, described negative-feedback circuit comprises the first diode, the metal-oxide-semiconductor of P-channel enhancement type, the first resistance, the positive pole of described first diode is connected with the drain electrode of described metal-oxide-semiconductor, the negative pole of described first diode is connected with the grid of described insulated gate bipolar transistor, the grid of described metal-oxide-semiconductor is connected with the auxiliary emitter-base bandgap grading of described insulated gate bipolar transistor by described first resistance, and the source electrode of described metal-oxide-semiconductor is connected with the power emitter-base bandgap grading of described insulated gate bipolar transistor.
Further, described negative-feedback circuit also comprises the first transient voltage controller, the second transient voltage controller, the negative pole of described first transient voltage controller is connected with the negative pole of the second transient voltage controller, the positive pole of the first transient voltage controller is connected with the grid of described metal-oxide-semiconductor, and the positive pole of the second transient voltage controller is connected with the source electrode of described metal-oxide-semiconductor.
Further, described negative-feedback circuit also comprises the second resistance, and the first end of described second resistance is connected with the grid of described metal-oxide-semiconductor, and the second end of described second resistance is connected with the source electrode of described metal-oxide-semiconductor.
Further, described negative-feedback circuit also comprises the second diode and the 3rd resistance, the positive pole of described second diode is connected with the auxiliary emitter-base bandgap grading of described insulated gate bipolar transistor, and the negative pole of described second diode is connected with the power emitter-base bandgap grading of described insulated gate bipolar transistor by described 3rd resistance.
Further, also one drive circuit is comprised, the output of described drive circuit is connected with the grid of described insulated gate bipolar transistor, for driving described insulated gate bipolar transistor conducting or shutoff, described drive circuit comprises NPN type triode, PNP type triode and the 4th resistance, the collector electrode of described NPN type triode connects positive supply, the collector electrode of described PNP type triode connects negative supply, the base stage of described NPN type triode and the base stage of described PNP type triode connect the input as drive circuit, emitter and the emitter of described PNP type triode of described NPN type triode are connected the output as drive circuit and are connected with the grid of described insulated gate bipolar transistor by described 4th resistance.
The beneficial effects of the utility model: described negative-feedback circuit coordinates with the stray inductance between power emitter-base bandgap grading with the auxiliary emitter-base bandgap grading of described insulated gate bipolar transistor, when described insulated gate bipolar transistor turns off, detect the pressure drop (U=L (di/dt) of stray inductance, namely the current variation speeds di/dt size between the collector electrode of described insulated gate bipolar transistor and power emitter-base bandgap grading is detected), when described insulated gate bipolar transistor collector electrode to power emitter-base bandgap grading rate of current di/dt change excessive time, di/dt is reduced by described negative-feedback circuit, thus suppress to turn off spike, reduce and turn off spike to the damage of described insulated gate bipolar transistor, play the effect protecting described insulated gate bipolar transistor.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical solution of the utility model, be briefly described to the accompanying drawing used required in execution mode below, apparently, accompanying drawing in the following describes is only execution modes more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained from these accompanying drawings.
Fig. 1 is that the utility model suppresses insulated gate bipolar transistor to turn off the circuit embodiments schematic diagram of spike.
Embodiment
Below in conjunction with the accompanying drawing in the utility model execution mode, the technical scheme in the utility model execution mode is clearly and completely described.The above is preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications are also considered as protection range of the present utility model.
Shown in figure 1, the circuit that described suppression insulated gate bipolar transistor turns off spike comprises insulated gate bipolar transistor Q1, drive circuit 1 and negative-feedback circuit 2; The output of described drive circuit 1 is connected with the grid of described insulated gate bipolar transistor Q1, for driving described insulated gate bipolar transistor Q1 conducting or shutoff.The emitter of described insulated gate bipolar transistor Q1 comprises auxiliary emitter-base bandgap grading E
aUXwith power emitter-base bandgap grading E
pOWER, described auxiliary emitter-base bandgap grading E
aUXwith power emitter-base bandgap grading E
pOWERbetween have a stray inductance L, this stray inductance L fixing exists.The first end of described negative-feedback circuit 2 is connected with the grid of described insulated gate bipolar transistor Q1, the second end of described negative-feedback circuit 2 and the auxiliary emitter-base bandgap grading E of described insulated gate bipolar transistor Q1
aUXconnect, the 3rd end of described negative-feedback circuit 2 and the power emitter-base bandgap grading E of described insulated gate bipolar transistor Q1
pOWERconnect.The present embodiment is by detecting described auxiliary emitter-base bandgap grading E
aUXwith described power emitter-base bandgap grading E
pOWERbetween the pressure drop (U=L (di/dt) of stray inductance L, namely the current variation speeds di/dt size between the collector electrode of described insulated gate bipolar transistor Q1 and power emitter-base bandgap grading is detected), when the collector electrode of described insulated gate bipolar transistor Q1 is excessive to the current variation speeds di/dt of power emitter-base bandgap grading, di/dt(principle is reduced: negative-feedback circuit 2 uses the voltage of grid of insulated gate bipolar transistor Q1 described in voltage lifting that stray inductance L produces by described negative-feedback circuit 2, the turn-off speed of described insulated gate bipolar transistor Q1 is slowed down), thus suppress to turn off spike, reduce and turn off spike to the damage of described insulated gate bipolar transistor Q1, play the effect protecting described insulated gate bipolar transistor Q1.
In better embodiment, described negative-feedback circuit 2 comprises the first diode D1, the metal-oxide-semiconductor Q2 of P-channel enhancement type, the first resistance R1, the positive pole of described first diode D1 is connected with the drain electrode of described metal-oxide-semiconductor Q2, the negative pole of described first diode D1 is connected with the grid of described insulated gate bipolar transistor Q1, and the grid of described metal-oxide-semiconductor Q2 passes through the auxiliary emitter-base bandgap grading E of described first resistance R1 and described insulated gate bipolar transistor Q1
aUXconnect, the source electrode of described metal-oxide-semiconductor Q2 and the power emitter-base bandgap grading E of described insulated gate bipolar transistor Q1
pOWERconnect.When described insulated gate bipolar transistor Q1 turns off, the collector electrode of described insulated gate bipolar transistor Q1 is to power emitter-base bandgap grading E
pOWERbetween current variation speeds di/dt too high, described power emitter-base bandgap grading E
pOWERvoltage higher than described auxiliary emitter-base bandgap grading E
aUXvoltage; now described metal-oxide-semiconductor Q2 conducting; the voltage of the grid of insulated gate bipolar transistor Q1 described in the voltage lifting that utilization stray inductance L produces; the turn-off speed of described insulated gate bipolar transistor Q1 is slowed down (namely reducing di/dt); thus suppress to turn off spike; reduce and turn off spike to the damage of described insulated gate bipolar transistor Q1, and protect described insulated gate bipolar transistor Q1.
In better embodiment, described negative-feedback circuit 2 also comprises the first transient voltage controller D2 and the second transient voltage controller D3, the negative pole of described first transient voltage controller D2 is connected with the negative pole of the second transient voltage controller D3, the positive pole of the first transient voltage controller D2 is connected with the grid of described metal-oxide-semiconductor Q2, and the positive pole of the second transient voltage controller D3 is connected with the source electrode of described metal-oxide-semiconductor Q2.When voltage between described metal-oxide-semiconductor Q2 grid and metal-oxide-semiconductor Q2 source electrode is excessive; by the voltage between the grid of metal-oxide-semiconductor Q2 described in described first transient voltage controller D2 and the second transient voltage controller D3 nip and source electrode; prevent overvoltage, thus serve the effect protecting described metal-oxide-semiconductor Q2.
In better embodiment, described negative-feedback circuit 2 also comprises the second resistance R2, and the first end of described second resistance R2 is connected with the grid of described metal-oxide-semiconductor Q2, and second end of described second resistance R2 is connected with the source electrode of described metal-oxide-semiconductor Q2.The effect of described second resistance R2: one, for described metal-oxide-semiconductor Q2 provides bias voltage; Two, the resistance value between the grid of described metal-oxide-semiconductor Q2 and source electrode is very large, as long as there is a small amount of electrostatic that the equivalent capacity two ends between the grid of described metal-oxide-semiconductor Q2 and source electrode just can be made to produce very high voltage like this, if not in time these a small amount of static discharges are fallen, the high pressure at described metal-oxide-semiconductor Q2 two ends just likely makes described metal-oxide-semiconductor Q2 produce misoperation, even likely punctures its gate-to-source; Described second resistance R2 is used for above-mentioned static discharge to fall, thus serves the effect protecting described metal-oxide-semiconductor Q2.
In better embodiment, described negative-feedback circuit 2 also comprises the second diode D4 and the 3rd resistance R3, the positive pole of described second diode D4 and the auxiliary emitter-base bandgap grading E of described insulated gate bipolar transistor Q1
aUXconnect, the negative pole of described second diode D4 passes through the power emitter-base bandgap grading E of described 3rd resistance R3 and described insulated gate bipolar transistor Q1
pOWERconnect, for shunting.
In better embodiment, described drive circuit 1 is a totem-pote circuit, specifically, totem-pote circuit is exactly each triode up and down, comprise pipe NPN type triode Q3, lower pipe PNP type triode Q4 and the 4th resistance R4, the collector electrode of described NPN type triode Q3 connects positive supply, the collector electrode of described PNP type triode Q4 connects negative supply, the base stage of described NPN type triode Q3 and the base stage of described PNP type triode Q4 connect the input as drive circuit 1, emitter and the emitter of described PNP type triode Q4 of described NPN type triode Q3 are connected the output as drive circuit 1 and are connected with the grid of described insulated gate bipolar transistor Q1 by described 4th resistance R4.When input signal is high level, upper pipe NPN type triode Q3 conducting; When input signal is low level, lower pipe PNP type triode Q4 conducting, can provide enough voltage, current amplitude, makes described insulated gate bipolar transistor Q1 unlikely release under normal work and overload situations saturated and damages.This is not restricted for drive circuit 1 in the present embodiment, and every those skilled in the art can expect, can realize the circuit to the described conducting of insulated gate bipolar transistor Q1 or the driving of shutoff.
Obviously, above-described embodiment of the present utility model is only for the utility model example is clearly described, and is not the restriction to execution mode of the present utility model.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.All do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., within the protection range that all should be included in the utility model claim.
Claims (6)
1. suppress insulated gate bipolar transistor to turn off a circuit for spike, it is characterized in that, comprise insulated gate bipolar transistor and negative-feedback circuit;
The first end of described negative-feedback circuit is connected with the grid of described insulated gate bipolar transistor, second end of described negative-feedback circuit is connected with the auxiliary emitter-base bandgap grading of described insulated gate bipolar transistor, 3rd end of described negative-feedback circuit is connected with the power emitter-base bandgap grading of described insulated gate bipolar transistor, for detecting the pressure drop of the stray inductance between described auxiliary emitter-base bandgap grading and described power emitter-base bandgap grading, suppress the shutoff spike between the collector electrode of described insulated gate bipolar transistor and power emitter-base bandgap grading when described insulated gate bipolar transistor turns off.
2. suppression insulated gate bipolar transistor according to claim 1 turns off the circuit of spike, it is characterized in that, described negative-feedback circuit comprises the first diode, the metal-oxide-semiconductor of P-channel enhancement type, first resistance, the positive pole of described first diode is connected with the drain electrode of described metal-oxide-semiconductor, the negative pole of described first diode is connected with the grid of described insulated gate bipolar transistor, the grid of described metal-oxide-semiconductor is connected with the auxiliary emitter-base bandgap grading of described insulated gate bipolar transistor by described first resistance, the source electrode of described metal-oxide-semiconductor is connected with the power emitter-base bandgap grading of described insulated gate bipolar transistor.
3. suppression insulated gate bipolar transistor according to claim 2 turns off the circuit of spike, it is characterized in that, described negative-feedback circuit also comprises the first transient voltage controller, the second transient voltage controller, the negative pole of described first transient voltage controller is connected with the negative pole of the second transient voltage controller, the positive pole of the first transient voltage controller is connected with the grid of described metal-oxide-semiconductor, and the positive pole of the second transient voltage controller is connected with the source electrode of described metal-oxide-semiconductor.
4. the suppression insulated gate bipolar transistor according to claim 2-3 any one turns off the circuit of spike, it is characterized in that, described negative-feedback circuit also comprises the second resistance, the first end of described second resistance is connected with the grid of described metal-oxide-semiconductor, and the second end of described second resistance is connected with the source electrode of described metal-oxide-semiconductor.
5. suppression insulated gate bipolar transistor according to claim 4 turns off the circuit of spike, it is characterized in that, described negative-feedback circuit also comprises the second diode and the 3rd resistance, the positive pole of described second diode is connected with the auxiliary emitter-base bandgap grading of described insulated gate bipolar transistor, and the negative pole of described second diode is connected with the power emitter-base bandgap grading of described insulated gate bipolar transistor by described 3rd resistance.
6. suppression insulated gate bipolar transistor according to claim 1 turns off the circuit of spike, it is characterized in that, also comprises one drive circuit;
The output of described drive circuit is connected with the grid of described insulated gate bipolar transistor, for driving described insulated gate bipolar transistor conducting or shutoff, described drive circuit comprises NPN type triode, PNP type triode and the 4th resistance, the collector electrode of described NPN type triode connects positive supply, the collector electrode of described PNP type triode connects negative supply, the base stage of described NPN type triode and the base stage of described PNP type triode connect the input as drive circuit, emitter and the emitter of described PNP type triode of described NPN type triode are connected the output as drive circuit and are connected with the grid of described insulated gate bipolar transistor by described 4th resistance.
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| CN201520264379.7U CN204615634U (en) | 2015-04-28 | 2015-04-28 | Insulated gate bipolar transistor is suppressed to turn off the circuit of spike |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707905A (en) * | 2019-09-24 | 2020-01-17 | 广州华工科技开发有限公司 | Method for realizing control based on IGBT |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707905A (en) * | 2019-09-24 | 2020-01-17 | 广州华工科技开发有限公司 | Method for realizing control based on IGBT |
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Granted publication date: 20150902 |
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