CN204538236U - A kind of high-gain aerial - Google Patents
A kind of high-gain aerial Download PDFInfo
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- CN204538236U CN204538236U CN201520167569.7U CN201520167569U CN204538236U CN 204538236 U CN204538236 U CN 204538236U CN 201520167569 U CN201520167569 U CN 201520167569U CN 204538236 U CN204538236 U CN 204538236U
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Abstract
The utility model discloses a kind of high-gain aerial; By arranging reflecting plate and being located at the multiple unipolarity micro-strip oscillators on reflecting plate; Described unipolarity micro-strip oscillator, includes main PCB plate, described main PCB plate is symmetrically arranged with two micro-band radiation areas; Described each micro-band radiation area includes micro-ly brings arc limit under arc limit and micro-band, described micro-bring arc limit and micro-band under arc limit close the closed region of formation one; The microstrip element of multiple independently 1/2nd wavelength is provided with in described each micro-band radiation area; It all shows excellent communication electric parameter performance in 800MHz to 950MHz frequency range, concrete, is greater than 31dB before and after the minimum frequency of single radiating element than all, at 950MHz, than being 36dB before and after the minimum frequency of single radiating element; And low frequency dot gains is all greater than 9.35dBi, in frequency band, average gain is greater than 9.8dBi.
Description
Technical field
The utility model relates to the communications field, is specifically related to a kind of high-gain aerial.
Background technology
At present, micro-band high-gain aerial becomes in communication, especially the main flow of Miniaturization high-gain antenna.High-gain aerial a kind of high-frequency current is changed into radio wave transmission to space, while can collection space radio wave produce the device of high-frequency current.High-gain aerial can regard the tuning circuit be made up of electric capacity and inductance as, this tuning circuit is at some Frequency point, and its capacitive and perception will be cancelled out each other, and circuit shows purely resistive, this phenomenon is referred to as resonance, and working frequency points corresponding to resonance phenomena is resonant frequency point, be in the energy of high-gain aerial resonant frequency point, its radiation characteristic is the strongest, and the high-gain aerial structure with resonance characteristic is called high-gain aerial oscillator, and the high-gain aerial structure of high-frequency current direct-drive is called active dipole, on the contrary be called parasitic element, in existing oscillator, comprise physics oscillator and micro-strip oscillator, use according to reality need to design high-gain aerial time, setting requirement is met in order to make the resonant frequency point of high-gain aerial, need to adjust the input impedance of high-gain aerial, the requirement of current communication standard still can not be met by the oscillator after adjustment and common oscillator, current communication standard is more and more higher, also more and more higher to the requirement of micro-strip oscillator, the gain of current oscillator, directivity, front and back are broken through than all needing to obtain, above-mentioned breakthrough is realized under the most important thing is to meet miniaturized prerequisite.
Summary of the invention
The purpose of this utility model is to overcome above-described shortcoming, provides a kind of high-gain, good directionality and can realize miniaturized high-gain aerial.
For achieving the above object, concrete scheme of the present utility model is as follows: a kind of high-gain aerial, includes reflecting plate and is located at the multiple unipolarity micro-strip oscillators on reflecting plate; Described unipolarity micro-strip oscillator, includes main PCB plate, described main PCB plate is symmetrically arranged with two micro-band radiation areas; Described each micro-band radiation area includes micro-ly brings arc limit under arc limit and micro-band, described micro-bring arc limit and micro-band under arc limit close the closed region of formation one; The microstrip element of multiple independently 1/2nd wavelength is provided with in described each micro-band radiation area; Wide centre, described each microstrip element two ends is narrow in dumbbell shaped; Described multiple independently 1/2nd wave microstrip unit are divided into first microstrip element, two the second microstrip elements, two the 3rd microstrip elements, two the 4th microstrip elements and the 5th microstrip elements;
Described first microstrip element is located at the side on arc limit under micro-band, 5th microstrip element is located near micro-side of bringing arc limit, described two the second microstrip elements be located at respectively the top of the first microstrip element both sides and in the same horizontal line, described two the 3rd microstrip elements be located at respectively the top of two the second microstrip elements both sides and in the same horizontal line, described two the 4th microstrip elements be located at respectively the 3rd microstrip element top and in the same horizontal line;
One end of described first microstrip element is electrically connected with one end of second microstrip element, the other end of described first microstrip element is electrically connected with one end of another the second microstrip element, the other end of described second microstrip element is electrically connected with one end of the 3rd microstrip element, the other end of another the second microstrip element described is electrically connected with one end of another the 3rd microstrip element, the other end of described 3rd microstrip element is connected with one end of the 4th microstrip element, the other end of another the 3rd microstrip element described is connected with one end of another the 4th microstrip element, the other end of described 4th microstrip element and the other end of another the 4th microstrip element are electrically connected with the two ends of the 5th microstrip element respectively.
Preferably, two microstrip-fed lines are also comprised; One end of described microstrip-fed line is electrically connected with the first microstrip element of corresponding micro-band radiation area, and the other end is electrically connected with the corresponding via hole on main PCB plate.
Preferably, the conductive layer thickness of described each microstrip element is between 0.5mm-1.5mm.
Preferably, the described microstrip-fed line N shape isolation part that includes a N font and the connecting portion that extends from one end, N shape isolation part; The other end of described N shape isolation part is electrically connected with via hole; The arch place of described two N shape isolation parts is all outside.
Preferably, a T-shaped micro-band T-shaped isolation part is also provided with between described 3rd microstrip element and the 4th microstrip element.
Preferably, describedly micro-ly the radian α 1 on arc limit is brought to be 90 °-120 °.
Preferably, the centre of described each microstrip element is provided with a two is the middle through hole for rectangle of arc.
Preferably, silicon dioxide semiconductor is filled with in described through hole.
Preferably, the edge of described main PCB plate is provided with a circle micro-band isolation loop wire.
Preferably, the both sides up and down of described main PCB plate are provided with jagged micro-band isolation tooth trace.
Preferably, the upper and lower of micro-band radiation area of described main PCB plate is equipped with two sections of micro-band isolation straight lines in the same horizontal line, and the close two ends of described two sections of micro-band straight lines are provided with isolation microstrip capacitor.
Preferably, the edge indentation of the mid portion of described microstrip element.
The beneficial effects of the utility model are: by arranging reflecting plate and being located at the multiple unipolarity micro-strip oscillators on reflecting plate; Described unipolarity micro-strip oscillator, includes main PCB plate, described main PCB plate is symmetrically arranged with two micro-band radiation areas; Described each micro-band radiation area includes micro-ly brings arc limit under arc limit and micro-band, described micro-bring arc limit and micro-band under arc limit close the closed region of formation one; The microstrip element of multiple independently 1/2nd wavelength is provided with in described each micro-band radiation area; Wide centre, described each microstrip element two ends is narrow in dumbbell shaped; Described multiple independently 1/2nd wave microstrip unit are divided into first microstrip element, two the second microstrip elements, two the 3rd microstrip elements, two the 4th microstrip elements and the 5th microstrip elements; It all shows excellent communication electric parameter performance in 800MHz to 950MHz frequency range, concrete, is greater than 31dB before and after the minimum frequency of single radiating element than all, at 950MHz, than being 36dB before and after the minimum frequency of single radiating element; And low frequency dot gains is all greater than 9.35dBi, in frequency band, average gain is greater than 9.8dBi.
Accompanying drawing explanation
Fig. 1 is vertical view of the present utility model;
Fig. 2 is unipolarity micro-strip oscillator vertical view of the present utility model;
Fig. 3 is unipolarity micro-strip oscillator vertical view of the present utility model;
Fig. 4 is the vertical view of microstrip element;
Fig. 5 is the front view of microstrip element;
Fig. 6 be when frequency is 800MHZ before and after the experimental data figure of ratio;
Fig. 7 be when frequency is 890MHZ before and after the experimental data figure of ratio;
Fig. 8 be when frequency is 920MHZ before and after the experimental data figure of ratio;
Fig. 9 be when frequency is 950MHZ before and after the experimental data figure of ratio;
Figure 10 is the directional diagram representing gain when frequency is 800MHZ;
Figure 11 is the directional diagram representing gain when frequency is 890MHZ;
Figure 12 is the directional diagram representing gain when frequency is 950MHZ;
Description of reference numerals in Fig. 1 to Figure 12:
A-reflecting plate;
1-main PCB plate; 11-micro-band isolation loop wire; 12-micro-band isolation tooth trace; 13-micro-band isolation straight line;
The micro-band radiation area of 2-; 21-is micro-brings arc limit; Arc limit under the micro-band of 22-;
31-via hole; 32-N shape isolation part; 33-connecting portion;
41-first microstrip element; 42-second microstrip element; 43-the 3rd microstrip element; 44-the 4th microstrip element; 45-the 5th microstrip element;
5-micro-band T-shaped isolation part;
6-through hole.
Embodiment
Being described in further detail the utility model below in conjunction with the drawings and specific embodiments, is not that practical range of the present utility model is confined to this.
As shown in Figures 1 to 12, a kind of high-gain aerial described in the present embodiment, includes reflecting plate a and is located at the multiple unipolarity micro-strip oscillators on reflecting plate a; Described unipolarity micro-strip oscillator, includes main PCB plate 1, described main PCB plate 1 is symmetrically arranged with two micro-band radiation areas 2; Described each micro-band radiation area 2 includes micro-ly brings arc limit 22 under arc limit 21 and micro-band, described micro-bring arc limit 21 and micro-band under arc limit 22 close the closed region of formation one; The microstrip element of multiple independently 1/2nd wavelength is provided with in described each micro-band radiation area 2; Wide centre, described each microstrip element two ends is narrow in dumbbell shaped; Described multiple independently 1/2nd wave microstrip unit are divided into first microstrip element 41, two the second microstrip elements 42, two the 3rd microstrip elements 43, two the 4th microstrip elements 44 and the 5th microstrip element 45;
Described first microstrip element 41 is located at the side on arc limit 22 under micro-band, 5th microstrip element 45 is located near micro-side of bringing arc limit 21, described two the second microstrip elements 42 be located at respectively the top of the first microstrip element 41 both sides and in the same horizontal line, described two the 3rd microstrip elements 43 be located at respectively the top of two the second microstrip elements 42 both sides and in the same horizontal line, described two the 4th microstrip elements 44 be located at respectively the 3rd microstrip element 43 top and in the same horizontal line;
One end of described first microstrip element 41 is electrically connected with one end of second microstrip element 42, the other end of described first microstrip element 41 is electrically connected with one end of another the second microstrip element 42, the other end of described second microstrip element 42 is electrically connected with one end of the 3rd microstrip element 43, the other end of another the second microstrip element 42 described is electrically connected with one end of another the 3rd microstrip element 43, the other end of described 3rd microstrip element 43 is connected with one end of the 4th microstrip element 44, the other end of another the 3rd microstrip element 43 described is connected with one end of another the 4th microstrip element 44, the other end of described 4th microstrip element 44 and the other end of another the 4th microstrip element 44 are electrically connected with the two ends of the 5th microstrip element 45 respectively.
By continuous microstrip circuit structural design, and by under continuous test and parameter adjustment, finally determine this microstrip circuit structure, excellent communication electric parameter performance is all shown in 800MHZ to 950MHZ frequency range, concrete, than being greater than 30dB before and after the minimum frequency of single radiating element, before and after in frequency band, be greater than 32dB than on average; Low frequency dot gains is greater than 9.37dBi, and in frequency band, average gain is greater than 9.8dBi.
Concrete actual test result such as following table HFSS15 software calculates:
Test frequency range section
Ratio before and after in frequency band
Corresponding gain
800MHz
31.225dB
9.3521dBi
820MHz
31.927dB
9.4956dBi
850MHz
32.312dB
9.5352dBi
870MHz
32.807dB
9.6149dBi
890MHz
33.635dB
9.7550dBi
910MHz
33.908dB
9.8321dBi
920MHz
34.135dB
9.9115dBi
940MHz
35.232dB
9.9960dBi
950 MHz
36.000dB
10.200dBi
As shown above, it all shows excellent communication electric parameter performance in 800MHz to 950MHz frequency range, concrete, is greater than 31dB before and after the minimum frequency of single radiating element than all, at 950MHz, than being 36dB before and after the minimum frequency of single radiating element; And low frequency dot gains is all greater than 9.35dBi, in frequency band, average gain is greater than 9.8dBi.
From experimental data, specifically intercept the gain data figure of front and back than datagram and three frequency ranges of four frequency ranges, as Fig. 6 to Figure 12, achieve excellent front and back specific characteristic at 800MHz to 950MHz, wherein, when 800MHz, as Fig. 6, than being 31.225dB before and after in its frequency band; When 890MHz, as Fig. 7, than being 33.635dB before and after in its frequency band; When 920MHz, as Fig. 8, than being 34.135dB before and after in its frequency band; When 950MHz, as Fig. 9, than being 36.000dB before and after in its frequency band; And the performance in gain: as Figure 10, it is when 800MHz, and its gain reaches: 9.3521 dBi; As Figure 11, it is when 890MHz, and its gain reaches: 9.7550 dBi; As Figure 12, it is when 950MHz, and its gain reaches: 10.200dBi; Can learn, than being greater than 33dB before and after in it is average, its gain is on average greater than 9.8dBi.
A kind of high-gain aerial described in the present embodiment, also comprises two microstrip-fed lines; One end of described microstrip-fed line is electrically connected with the first microstrip element 41 of corresponding micro-band radiation area 2, and the other end is electrically connected with the corresponding via hole 31 on main PCB plate 1; By this structure, can easily by feed line and main PCB plate 1, namely microstrip circuit realizes merging integration.
A kind of high-gain aerial described in the present embodiment, the conductive layer thickness d of described each microstrip element is between 0.5mm-1.5mm.As described in Figure 4, namely the thickness of described d etch the thickness of individual layer copper clad layers on pcb board; Be positioned at this thickness, it can effectively increase pcb board steadiness, i.e. the stability of microstrip circuit, has the realization that can ensure to realize above-mentioned experimental data; Be unlikely to again blocked up, and the mutual interference increased.
A kind of high-gain aerial described in the present embodiment, the N shape isolation part 32 that described microstrip-fed line includes a N font and the connecting portion 33 extended from one end, N shape isolation part 32; The other end of described N shape isolation part 32 is electrically connected with via hole 31; The arch place of described two N shape isolation parts 32 is all outside.Increase N shape isolation part 32 and all outside isolation added experimentally between feed line in arch place, reduction interferes with each other, and reduces because the vacation coupling of generation disturbed mutually by feed line.
A kind of high-gain aerial described in the present embodiment, is also provided with a T-shaped micro-band T-shaped isolation part 5 between described 3rd microstrip element 43 and the 4th microstrip element 44; This structure can effectively increase product isolation, and in software emulation, isolation can reach 30dB.
A kind of high-gain aerial described in the present embodiment, describedly micro-ly brings the radian α 1 on arc limit 21 to be 90 °-120 °.When this radian α 1, find with emulation and final test by experiment, within the scope of this radian, realize the optimal stability of above-mentioned experimental data.
A kind of high-gain aerial described in the present embodiment, it is the middle through hole 6 for rectangle of arc that the centre of described each microstrip element is provided with a two.Silicon dioxide semiconductor is filled with in described through hole 6.This structure, adds current path length in single microstrip element, and indirectly add radiation gain and front and back ratio, communication performance improves further.
A kind of high-gain aerial described in the present embodiment, the edge of described main PCB plate 1 is provided with a circle micro-band isolation loop wire 11.This structure can effectively increase product isolation, and in software emulation, isolation can reach 30dB.
A kind of high-gain aerial described in the present embodiment, the both sides up and down of described main PCB plate 1 are provided with jagged micro-band isolation tooth trace 12; This structure can have to continue to imitate increases product isolation, and in software emulation, isolation can reach 30dB.
A kind of high-gain aerial described in the present embodiment, the upper and lower of micro-band radiation area 2 of described main PCB plate is equipped with two sections of micro-band isolation straight lines 13 in the same horizontal line, and the close two ends of described two sections of micro-band straight lines are provided with isolation microstrip capacitor; Isolation microstrip capacitor effectively can remove the even signal produced when isolating near micro-band isolation tooth trace 12, increases signal pure.
A kind of high-gain aerial described in the present embodiment, the edge indentation of the mid portion of described microstrip element; As shown in Figure 3, this structure achieves radiation level and the gain degree of microstrip element, and this structure, adds current path length in single microstrip element, and indirectly add radiation gain and front and back ratio, communication performance improves further; In the middle of software emulation and actual measuring and calculating, gain obviously strengthens, and original gain increases 0.2-0.6dBi.
The above is only a preferred embodiment of the present utility model, therefore all equivalences done according to structure, feature and the principle described in the utility model patent claim change or modify, and are included in the protection range of the utility model patent application.
Claims (10)
1. a high-gain aerial, is characterized in that: include reflecting plate (a) and be located at the multiple unipolarity micro-strip oscillators on reflecting plate (a); Described unipolarity micro-strip oscillator, includes main PCB plate (1), described main PCB plate (1) is symmetrically arranged with two micro-band radiation areas (2); Described each micro-band radiation area (2) includes micro-ly brings arc limit (22) under arc limit (21) and micro-band, described micro-region of bringing the closed formation one in arc limit (22) under arc limit (21) and micro-band closed; The microstrip element of multiple independently 1/2nd wavelength is provided with in described each micro-band radiation area (2); Wide centre, described each microstrip element two ends is narrow in dumbbell shaped; Described multiple independently 1/2nd wave microstrip unit are divided into first microstrip element (41), two the second microstrip elements (42), two the 3rd microstrip elements (43), two the 4th microstrip elements (44) and the 5th microstrip elements (45);
Described first microstrip element (41) is located at the side on arc limit (22) under micro-band, 5th microstrip element (45) is located near micro-side of bringing arc limit (21), described two the second microstrip elements (42) be located at respectively the top of the first microstrip element (41) both sides and in the same horizontal line, described two the 3rd microstrip elements (43) be located at respectively the top of two the second microstrip elements (42) both sides and in the same horizontal line, described two the 4th microstrip elements (44) be located at respectively the 3rd microstrip element (43) top and in the same horizontal line;
One end of described first microstrip element (41) is electrically connected with one end of second microstrip element (42), the other end of described first microstrip element (41) is electrically connected with one end of another the second microstrip element (42), the other end of described second microstrip element (42) is electrically connected with one end of the 3rd microstrip element (43), the other end of another the second microstrip element (42) described is electrically connected with one end of another the 3rd microstrip element (43), the other end of described 3rd microstrip element (43) is connected with one end of the 4th microstrip element (44), the other end of another the 3rd microstrip element (43) described is connected with one end of another the 4th microstrip element (44), the other end of described 4th microstrip element (44) and the other end of another the 4th microstrip element (44) are electrically connected with the two ends of the 5th microstrip element (45) respectively,
It is the middle through hole (6) for rectangle of arc that the centre of described each microstrip element is provided with a two; Described through hole is filled with silicon dioxide semiconductor in (6).
2. a kind of high-gain aerial according to claim 1, is characterized in that: also comprise two microstrip-fed lines; One end of described microstrip-fed line is electrically connected with first microstrip element (41) of corresponding micro-band radiation area (2), and the other end is electrically connected with the corresponding via hole (31) on main PCB plate (1).
3. a kind of high-gain aerial according to claim 1, is characterized in that: the conductive layer thickness of described each microstrip element is between 0.5mm-1.5mm.
4. a kind of high-gain aerial according to claim 2, is characterized in that: the N shape isolation part (32) that described microstrip-fed line includes a N font and the connecting portion (33) extended from N shape isolation part (32) one end; The other end of described N shape isolation part (32) is electrically connected with via hole (31); The arch place of described two N shape isolation parts (32) is all outside.
5. a kind of high-gain aerial according to claim 1, is characterized in that: be also provided with a T-shaped micro-band T-shaped isolation part (5) between described 3rd microstrip element (43) and the 4th microstrip element (44).
6. a kind of high-gain aerial according to claim 1, is characterized in that: describedly micro-ly bring the radian α 1 on arc limit (21) to be 90 °-120 °.
7. a kind of high-gain aerial according to claim 1, is characterized in that: the edge of described main PCB plate (1) is provided with micro-band isolation loop wire (11) of a circle.
8. a kind of high-gain aerial according to claim 1, is characterized in that: the both sides up and down of described main PCB plate (1) are provided with jagged micro-band isolation tooth trace (12).
9. a kind of high-gain aerial according to claim 1, it is characterized in that: the upper and lower of micro-band radiation area (2) of described main PCB plate is equipped with two sections of micro-bands isolation straight line (13) in the same horizontal line, and the close two ends of described two sections of micro-band straight lines are provided with isolation microstrip capacitor.
10. a kind of high-gain aerial according to claim 1, is characterized in that: the edge indentation of the mid portion of described microstrip element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520167569.7U CN204538236U (en) | 2015-03-24 | 2015-03-24 | A kind of high-gain aerial |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520167569.7U CN204538236U (en) | 2015-03-24 | 2015-03-24 | A kind of high-gain aerial |
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| CN204538236U true CN204538236U (en) | 2015-08-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701615A (en) * | 2015-03-24 | 2015-06-10 | 邝嘉豪 | High gain antenna |
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2015
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701615A (en) * | 2015-03-24 | 2015-06-10 | 邝嘉豪 | High gain antenna |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Jining Inventor before: Gu Shuhua |
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| COR | Change of bibliographic data | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20151207 Address after: 510665, room 15, No. 305 Yu Nan Road, Tianhe District, Guangdong, Guangzhou Patentee after: Guangzhou Shengyuan Communication Technology Co Ltd Address before: The mountain village of new town in Zhejiang province Xiangshan County No. 273 315725 Patentee before: Gu Shuhua |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150805 Termination date: 20170324 |