CN204464307U - PbSe quantum dot and the photosensitive field effect transistor of Graphene bulk heterojunction - Google Patents

Abstract

The utility model discloses a kind of PbSe quantum dot and the photosensitive field effect transistor of Graphene bulk heterojunction, the photosensitive field effect transistor of bulk heterojunction, comprising: substrate layer, substrate layer is provided with silicon dioxide layer, silicon dioxide layer is provided with electrode layer, and electrode layer is as the source electrode of whole field effect transistor and drain electrode; The intermediate channel position of electrode layer is provided with quantum dot and redox graphene mixed layer, and the source electrode of electrode layer is connected conductor wire, for test component with drain electrode.

Description

PbSe quantum dot and the photosensitive field effect transistor of Graphene bulk heterojunction

Technical field

The utility model relates to photosensitive field effect transistor field, particularly relates to a kind of PbSe quantum dot and the photosensitive field effect transistor of Graphene bulk heterojunction.

Background technology

Field effect transistor is developed so far, its basic device form and operation principle similar, all comprise three electrodes, i.e. source electrode, drain and gate.Traditional field-effect transistor utilizes grid voltage to control charge carrier number in conducting channel and realizes its function.Manufacture method is comparatively ripe, and device formation is also comparatively stable.Field-effect transistor has possessed the advantage of normal transistor and electron tube simultaneously, and self also has a lot of unique character.From its course of work, source electrode and the drain electrode of field-effect transistor can be exchanged, namely the source electrode of field-effect transistor and drain electrode have symmetry, and this character avoids the possibility that reversal connection causes circuit to damage in actual use, normal transistor be do not allow facile.Secondly, the noise factor of field-effect transistor is low, and has very strong radiation protection ability.

But along with reducing of field effect transistor yardstick, the homogeneity question of device fabrication becomes more and more serious, and machining accuracy and the uniform doping of device also become restriction.When device dimension reaches nano-scale, the foreign atom number in device also will drop to the hundreds of even degree of tens.Make the electrology characteristic bad stability of field effect transistor.

Under the background of traditional silicon-based devices convergence physics limit day by day, the field effect transistor containing quantum dot or Graphene receives extensive concern as a kind of novel nano device.Size in three dimensions of quantum dot is all in nanometer scale, from the angle that material dimension is limited, when material dimension is in different directions less than Fermi's wavelength of this material, electronics limitation of movement in the direction in which in material, causes its physical characteristic, optical characteristics has a very large change.Its energy level distributional class is similar to atomic energy level distribution, is discretization.When the size of quantum dot is less, the relative distance between adjacent quantum dot will increase, and the mobility of charge carrier also can decrease, can not high-efficiency transfer.And Graphene itself is as a kind of special construction of carbon, there is high mobility and high carrier speed, be conductivity best material in the world, electronics movement velocity wherein reaches 1/300 of the light velocity, considerably beyond the movement velocity of electronics in general conductor.Therefore this characteristic just compensate for the defect of quanta point material.

The combination of quantum dot and grapheme material, both the tunable optical characteristics, the luminous efficiency that had combined quantum dot uniqueness are higher, have both again the advantages such as grapheme material conductivity at room temperature is fastest, the capacity of heat transmission is the strongest, there is superior optic tunable and photocatalytic, this is also the effective way improving electron-hole separation of charge and electron transfer efficiency thereof, in the numerous areas such as flexible optoelectronic material, solar cell, sensor measuring, have good application prospect, the research being wherein used for doing field effect transistor was also day by day increase in recent years.

The common advantage of grapheme material and quanta point material, the quick response to incident light can be realized, and it is tuning to carry out wide bandwidth to respective wavelength, all higher response can be realized at near-infrared and middle-infrared band, existing experiment and previous work also demonstrate this device can at room temperature steady operation, do not need the restriction of cryogenic conditions, therefore solid feasibility practical basis has also been established for the device of this novel quantum dot field effect transistor and industrialization.In the past few years, researcher has investigated and have studied multiple different material system and nanostructure, to manufacture novel field-effect transistor (FET), comprise carbon nano-tube (CNTs) and Graphene, Si nano wire and SiGe semiconductor field effect transistor, and Ge and InGaAs field effect transistor, the field effect transistor based on various new material is also continuing to bring out.

Utility model content

The utility model provides a kind of PbSe quantum dot and the photosensitive field effect transistor of Graphene bulk heterojunction, the utility model can realize the high carrier concentration of quantum dot under incident light effect, and realize the transmission to charge carrier by the high mobility of Graphene, thus the electric current controlling drain electrode exports, described below:

A kind of PbSe quantum dot and the photosensitive field effect transistor of Graphene bulk heterojunction, comprising: substrate layer, described substrate layer be provided with silicon dioxide layer, described silicon dioxide layer is provided with electrode layer, and described electrode layer is as the source electrode of whole field effect transistor and drain electrode; The intermediate channel position of described electrode layer is provided with quantum dot and redox graphene mixed layer, and the source electrode of described electrode layer is connected conductor wire, for test component with drain electrode;

Described substrate layer is highly doped monocrystalline silicon layer, and thickness is at 300nm; The thickness of described silicon dioxide layer is 300nm.

The beneficial effect of the technical scheme that the utility model provides is: the utility model is provided with electrode layer on silicon dioxide layer, and electrode layer is as the source electrode of whole field effect transistor and drain electrode; The intermediate channel position of electrode layer is provided with quantum dot and redox graphene mixed layer; The source electrode of electrode layer is connected conductor wire with drain electrode.The incident light of this field effect transistor to infrared band has higher responsiveness.

Accompanying drawing explanation

Fig. 1 is the front view of field effect transistor;

Fig. 2 is the vertical view of field effect transistor.

In accompanying drawing, the list of parts representated by each label is as follows:

1: substrate layer; 2: silicon dioxide layer;

3: electrode layer; 4: quantum dot and redox graphene mixed layer.

Embodiment

For making the purpose of this utility model, technical scheme and advantage clearly, below the utility model execution mode is described in further detail.

Embodiment 1

The photosensitive field effect transistor of bulk heterojunction of PbSe quantum dot and Graphene, overall structure is made up of multilayer unlike material compound, see Fig. 1 and Fig. 2, comprise: substrate layer 1, substrate layer 1 is provided with silicon dioxide layer 2, silicon dioxide layer 2 is provided with electrode layer 3, electrode layer 3 is as the source electrode of whole field effect transistor and drain electrode; The intermediate channel position of electrode layer 3 is provided with quantum dot and redox graphene mixed layer 4, and the source electrode of electrode layer 3 is connected conductor wire, for test component with drain electrode.

Wherein, substrate layer 1 is specially highly doped monocrystalline silicon layer, and thickness is at 300nm.Silicon dioxide layer 2 for thickness be the silicon dioxide of 300nm.

Electrode layer 3, this layer, above silicon dioxide layer 2, is source electrode and the drain electrode of field effect transistor, is obtained by evaporation coating method, thickness is 200nm, and source electrode is identical with the material of drain electrode, and structure is the same, two electrodes can exchange use, and without the need to emphasizing which is source electrode, which is drain electrode.

The utility model embodiment is to the model of each device except doing specified otherwise, and the model of other devices does not limit, as long as can complete the device of above-mentioned functions.

It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferred embodiment, above-mentioned the utility model embodiment sequence number, just to describing, does not represent the quality of embodiment.

The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.

Claims (1)

1. PbSe quantum dot and the photosensitive field effect transistor of Graphene bulk heterojunction, comprising: substrate layer, it is characterized in that,

Described substrate layer is provided with silicon dioxide layer, described silicon dioxide layer is provided with electrode layer, described electrode layer is as the source electrode of whole field effect transistor and drain electrode; The intermediate channel position of described electrode layer is provided with quantum dot layer, and the source electrode of described electrode layer is connected conductor wire, for test component with drain electrode;

Described substrate layer is highly doped monocrystalline silicon layer, and thickness is at 300nm; The thickness of described silicon dioxide layer is 300nm.