CN204391236U - Single-chip integration microwave broadband power divider - Google Patents
Single-chip integration microwave broadband power divider Download PDFInfo
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- CN204391236U CN204391236U CN201520070526.7U CN201520070526U CN204391236U CN 204391236 U CN204391236 U CN 204391236U CN 201520070526 U CN201520070526 U CN 201520070526U CN 204391236 U CN204391236 U CN 204391236U
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- 230000010354 integration Effects 0.000 title claims abstract description 10
- 238000002955 isolation Methods 0.000 claims abstract description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000013461 design Methods 0.000 description 5
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 239000010408 film Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
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- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The utility model relates to ic manufacturing technology field, particularly relate to a kind of single-chip integration microwave broadband power divider, comprise multistage Wilkinson power divider, it is made up of transmission line and isolation resistance, be connected with matching capacitance at isolation resistance two ends at different levels, described transmission line, isolation resistance and matching capacitance are integrated on GaAs base material.Adopt single slice integration technique directly that all element-transmission lines, build-out resistor, matching capacitance is once integrated on GaAs base material, the reduction greatly of traditional microwave broadband power divider that the final size of device is suitable compared with performance, area is only about 1/15, and the miniaturization for system provides effective support.
Description
Technical field
The utility model relates to ic manufacturing technology field, particularly relates to a kind of single-chip integration microwave broadband power divider.
Background technology
Microwave power divider is a kind of multiport microwave device, by the power decile of a road microwave signal or be not divided into multichannel microwave signal, is widely used in the equipment such as various radio communication, radar, microwave measurement, usually also referred to as microwave power distributor.Single-stage Wilkinson power divider is as shown in Figure 1 modal microwave power divider, adopts microstrip structure can conveniently realize on planar circuit, is applicable to the occasion that bandwidth requirement is not high.
In many microwave systems, capital requires insertion loss little as far as possible, to reduce the energy loss of system, and requires the amplitude of each branch road and the consistency of phase place, thus ensure efficient allocation and the superposition of microwave signal, particularly important in multichannel direction-finding system; For phase array and power synthetic system, the high-isolation between branch road can ensure the independence between branch road, makes the fault of partial branch be unlikely to affect the normal work of other branch roads; Equipment size is had to the occasion of strict restriction, the miniaturization of microwave power divider will contribute to the miniaturization of whole system; Along with the development of various military-civil microwave telecommunication devices, the requirement for frequency band is also more and more wider, so the broadband character of microwave power divider also becomes more and more important.
Along with the change of application demand, much intelligentized equipment proposes higher requirement to the miniaturization of system, and miniaturization, ultra broadband etc. as the power divider of the vitals of microwave system equipment require also day by day strong.But adopt microwave power divider general at present, as depicted in figs. 1 and 2, no matter be add welding isolation resistance or film printed circuit etc. with microwave printed circuit plate, due to the restriction of its process equipment, as adopted ceramic process, machining accuracy is limited, and the product area made is all the product of square centimeter magnitude, cannot in the miniaturization of product further.Carry out in the design of Simulation of wideband power distributor at employing GaAs base material, we find: the bandwidth of traditional power splitter structure is mainly limited by this index of isolation of the low side of frequency band, solution realizes by increasing progression exactly, but due to the increase of progression, bring again the increase of insertion loss, size also can strengthen accordingly simultaneously.
Utility model content
The purpose of this utility model is the deficiency overcoming above-mentioned technology, and a kind of single-chip integration microwave broadband power divider is provided, utilize less progression to realize identical broadband character, while the power divider making overall performance more traditional improves further, circuit size is corresponding reduction also.
The utility model for achieving the above object, by the following technical solutions: a kind of single-chip integration microwave broadband power divider, comprise multistage Wilkinson power divider, it is made up of transmission line and isolation resistance, it is characterized in that: be connected with matching capacitance at isolation resistance two ends at different levels, described transmission line, isolation resistance and matching capacitance are integrated on GaAs base material.Theoretical according to the impedance matching of microwave network, we think and likely solve this problem by increase match circuit.By making repeated attempts, increase the way that matching capacitance is simple possible at isolation resistance two ends.And the capacitance of matching capacitance is less, in pF magnitude, need to be optimized design according to global index requirement.Due to technological reason, the ability of electric capacity is not all made in common microwave printed circuit and thin film circuit, and adopting the mode of welding electric capacity high frequency performance can be worsened because capacitance is difficult to the impact of selection and parasitic parameter, this also may be the reason that this programme be not applied in the past.And in the ic manufacturing process taking GaAs base material, inductance capacitance etc. are all the most basic elements, can facilitate and realize accurately.
Preferably, described matching capacitance adopts metal medium electric capacity.
The beneficial effects of the utility model are: shown by the actual test result of the power divider of such scheme design processing: in 1-20GHz, Insertion Loss is less than 1.5dB, 1-2GHz isolation is greater than 10dB, 2-20GHz isolation is greater than 15dB, and whole device final size is only 2.5 ㎜ × 0.1, ㎜ × 2.5 ㎜; Select GaAs base material, utilize the high-k characteristic of GaAs, ε r reaches about 12.8; Thickness is thin, 0.1 ㎜ can be thinned to, the live width of 50 ohm transmission line in power divider is only 0.07 ㎜, for centre Z1, Z2, Z3 at different levels of more high impedance ... the live width of Zn is then narrower, thus can be bending to obtain less overall dimension by being carried out by transmission line easily; Adopt single slice integration technique directly that all element-transmission lines, build-out resistor, matching capacitance is once integrated on GaAs base material, the reduction greatly of traditional microwave broadband power divider that the final size of device is suitable compared with performance, area is only about 1/15, and the miniaturization for system provides effective support.
Accompanying drawing explanation
Fig. 1 is the Wilkinson power divider of single-stage;
Fig. 2 is the multistage Wilkinson power divider adopted for realizing broadband character;
Fig. 3 is structural representation of the present utility model;
Fig. 4 is the bandwidth of the multistage Wilkinson power divider that cohn provides and the interpolation table of impedance at different levels, isolation resistance etc.;
Embodiment
Embodiment of the present utility model is described in detail below in conjunction with accompanying drawing and preferred embodiment, Cohn solved Wilkinson power divider by increasing the progression of power divider bandwidth problem in 1986 is still widely used at present, give the design data sheet of this power splitter, as Fig. 4 simultaneously.According to this form, adopt 7 grades of couplings, the bandwidth of 10 octaves can be realized.For the ultra broadband characteristic that 1-20GHz is such, then need to continue to increase progression, the result of emulation shows needs at least 9 grades of power division network cascades.
In the wideband power distributor of this example, by (Z0, Z1, Z2 at different levels ... Zn) isolation resistance two ends increase matching capacitance, as shown in Figure 3.Matching capacitance C1 is increased respectively at isolation resistance R1 two ends, matching capacitance C2 is increased at isolation resistance R2 two ends, matching capacitance C3 is increased at isolation resistance R3 two ends, matching capacitance Cn is increased at isolation resistance Rn two ends, and be optimized acquisition optimal capacitance value by adopting simulation software in a computer, this makes it possible to selectively suppress low frequency signal to pass through, thus improve the isolation of frequency band low side (1-2GHz), make us only can carry out with 6 grades of power distributing networks the ultra broadband characteristic that cascade just can realize 1-20GHz.Shown by the actual test result of the power divider of such scheme design processing: in 1-20GHz, Insertion Loss is less than 1.5dB, 1-2GHz isolation is greater than 10dB, and 2-20GHz isolation is greater than 15dB, and whole device final size is only 2.5 ㎜ × 0.1, ㎜ × 2.5 ㎜.
The above is only preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (2)
1. a single-chip integration microwave broadband power divider, comprise multistage Wilkinson power divider, it is made up of transmission line and isolation resistance, it is characterized in that: be connected with matching capacitance at isolation resistance two ends at different levels, described transmission line, isolation resistance and matching capacitance are integrated on GaAs base material.
2. single-chip integration microwave broadband power divider according to claim 1, is characterized in that: described matching capacitance adopts metal medium electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201520070526.7U CN204391236U (en) | 2015-01-30 | 2015-01-30 | Single-chip integration microwave broadband power divider |
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| CN201520070526.7U CN204391236U (en) | 2015-01-30 | 2015-01-30 | Single-chip integration microwave broadband power divider |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006623A (en) * | 2015-07-21 | 2015-10-28 | 成都中微电微波技术有限公司 | Microwave power dividing device |
| CN105006622A (en) * | 2015-07-21 | 2015-10-28 | 成都中微电微波技术有限公司 | Microwave power divider |
| CN105070999A (en) * | 2015-07-21 | 2015-11-18 | 成都中微电微波技术有限公司 | Microwave broadband power divider |
| CN105186083A (en) * | 2015-09-29 | 2015-12-23 | 中国电子科技集团公司第四十一研究所 | Miniaturized ultra wide band microwave power divider |
| CN105244590A (en) * | 2015-10-22 | 2016-01-13 | 华南理工大学 | Ultra wide band power divider |
| CN106329053A (en) * | 2015-06-23 | 2017-01-11 | 南京理工大学 | Dual-frequency Wilkinson power divider |
| CN112886175A (en) * | 2021-01-13 | 2021-06-01 | 上海科技大学 | Lumped element unequal power divider with simplest structure and design method |
| CN113114153A (en) * | 2021-04-09 | 2021-07-13 | 成都通量科技有限公司 | Broadband high-isolation power divider chip |
-
2015
- 2015-01-30 CN CN201520070526.7U patent/CN204391236U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106329053A (en) * | 2015-06-23 | 2017-01-11 | 南京理工大学 | Dual-frequency Wilkinson power divider |
| CN105006623A (en) * | 2015-07-21 | 2015-10-28 | 成都中微电微波技术有限公司 | Microwave power dividing device |
| CN105006622A (en) * | 2015-07-21 | 2015-10-28 | 成都中微电微波技术有限公司 | Microwave power divider |
| CN105070999A (en) * | 2015-07-21 | 2015-11-18 | 成都中微电微波技术有限公司 | Microwave broadband power divider |
| CN105186083A (en) * | 2015-09-29 | 2015-12-23 | 中国电子科技集团公司第四十一研究所 | Miniaturized ultra wide band microwave power divider |
| CN105244590A (en) * | 2015-10-22 | 2016-01-13 | 华南理工大学 | Ultra wide band power divider |
| CN105244590B (en) * | 2015-10-22 | 2018-09-14 | 华南理工大学 | A kind of ultra wideband power divider |
| CN112886175A (en) * | 2021-01-13 | 2021-06-01 | 上海科技大学 | Lumped element unequal power divider with simplest structure and design method |
| CN113114153A (en) * | 2021-04-09 | 2021-07-13 | 成都通量科技有限公司 | Broadband high-isolation power divider chip |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160706 Address after: 300451, Tianjin Binhai New Area, Tanggu new North Road, 4668, innovation and Innovation Park, 22-A, workshop 4, B angle -3 Patentee after: Tianjin Zhongke haigao Microwave Technology Co. Ltd. Address before: 300451, Tianjin Binhai New Area, Tanggu new North Road, 4668, innovation and Innovation Park, 22-A, workshop 4, B angle -3 Patentee before: Quan Jinhai |