CN204390687U - Image element circuit and active matrix/organic light emitting display - Google Patents
Image element circuit and active matrix/organic light emitting display Download PDFInfo
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- CN204390687U CN204390687U CN201420868843.9U CN201420868843U CN204390687U CN 204390687 U CN204390687 U CN 204390687U CN 201420868843 U CN201420868843 U CN 201420868843U CN 204390687 U CN204390687 U CN 204390687U
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Abstract
The utility model relates to a kind of image element circuit and active matrix/organic light emitting display, and wherein, image element circuit comprises: the first film transistor and the second thin film transistor (TFT); The grid of the first film transistor is connected with sweep trace, sweep trace is used for providing pulse-width signal, the grid of the second thin film transistor (TFT) is connected with the drain electrode of the first film transistor, and ON time and the closing time of the second thin film transistor (TFT) control by pulse-width signal.In the image element circuit provided at the utility model and active matrix/organic light emitting display, digital drive mode is adopted to drive pixel light emission, namely the high-speed switch of the second thin film transistor (TFT) is controlled by pulse-width signal to modulate its dutycycle, thus realize the display of full-color picture, in image element circuit, need not electric capacity be set, therefore structure is simpler, and power consumption is lower.Further, owing to not having the aperture opening ratio of capacitive effect pixel, therefore active matrix/organic light emitting display has higher brightness, and more easily improves resolution.
Description
Technical field
The utility model relates to technical field of flat panel display, particularly a kind of image element circuit and active matrix/organic light emitting display.
Background technology
Active matrix/organic light emitting display (English full name Active Matrix Organic Lighting EmittingDisplay, be called for short AMOLED) can self-luminescence, unlike Thin Film Transistor-LCD (English full name Thin Film Transistor liquid crystal display, be called for short TFT-LCD) need back light system (backlight system) just can light, therefore visibility and brightness are all higher, and more frivolous.At present, active matrix/organic light emitting display is described as the display of new generation that can replace Thin Film Transistor-LCD.
Please refer to Fig. 1, it is the circuit diagram of the pixel of the active matrix/organic light emitting display of prior art.As shown in Figure 1, each pixel of active matrix/organic light emitting display includes image element circuit 10 and Organic Light Emitting Diode OLED, described image element circuit 10 is connected with data line Dm and sweep trace Sn, and control the luminescence of described Organic Light Emitting Diode OLED, wherein, described image element circuit 10 comprises switching thin-film transistor T1, drive thin film transistor (TFT) T2 and memory capacitance C, the grid of described driving thin film transistor (TFT) T2 is connected with the drain electrode of described switching thin-film transistor T1, the source electrode of described driving thin film transistor (TFT) T2 is connected with the first power supply ELVDD, the drain electrode of described driving thin film transistor (TFT) T2 is connected with the anode of described Organic Light Emitting Diode OLED, the negative electrode of described Organic Light Emitting Diode OLED is connected with second source ELVSS, between the grid that described memory capacitance C is connected to described driving thin film transistor (TFT) T2 and source electrode.
In described image element circuit 10, by the Kai Heguan of sweep trace Sn gauge tap thin film transistor (TFT) T1, by data line Dm, required data voltage Data is write memory capacitance C after switching thin-film transistor T1 opens, after switching thin-film transistor T1 closes, memory capacitance C still keeps data voltage Data, in the time of a frame, Sustainable Control drives the duty of thin film transistor (TFT) T2, thus control the electric current flowing through described Organic Light Emitting Diode OLED, to realize the bright dark change of described Organic Light Emitting Diode OLED.
Wherein, the Main Function of described memory capacitance C is the data voltage keeping described data line Dm to provide, and in order to the maintenance effect reached, it is larger that the capacitance of described memory capacitance C generally can design.Accordingly, the Area comparison of described memory capacitance C is large, and its area shared within the pixel also can be larger.Because memory capacitance C is lighttight, the area therefore occupied by described memory capacitance C can affect the aperture opening ratio of pixel.Meanwhile, due to the charge/discharge operation of electric capacity, make to adopt the power dissipation ratio of described image element circuit 10 higher.
At present, no matter being the 2T1C type circuit structure shown in Fig. 1 or other " the many C of many T " type circuit structures, all there is the aperture opening ratio reducing pixel because being provided with electric capacity, the problem increasing power consumption.
Base this, how to reduce the power consumption of active matrix/organic light emitting display and the aperture opening ratio improving its a pixel technical matters having become those skilled in the art urgently to be resolved hurrily.
Utility model content
The purpose of this utility model is to provide a kind of image element circuit and active matrix/organic light emitting display, with the problem that the power consumption solving existing active matrix/organic light emitting display aperture opening ratio that is large, pixel is low.
For solving the problem, the utility model provides a kind of image element circuit, and described image element circuit comprises: the first film transistor and the second thin film transistor (TFT); The grid of described the first film transistor is connected with sweep trace, described sweep trace is used for providing pulse-width signal, the grid of described second thin film transistor (TFT) is connected with the drain electrode of described the first film transistor, and ON time and the closing time of described second thin film transistor (TFT) control by described pulse-width signal.
Optionally, in described image element circuit, the source electrode of described the first film transistor is connected with data line, and described data line is used for providing data voltage, and described Organic Light Emitting Diode is luminous according to described data voltage when described second thin film transistor (TFT) conducting.
Optionally, in described image element circuit, the pulse-width signal that the conducting of described the first film transistor and cut-off are provided by described sweep trace controls, and the data voltage that the conducting of described second thin film transistor (TFT) and cut-off are provided by described data line controls.
Optionally, in described image element circuit, described the first film transistor and the second thin film transistor (TFT) are P-type TFT.
Optionally, in described image element circuit, the source electrode of described second thin film transistor (TFT) is connected with the first power supply, and the drain electrode of described second thin film transistor (TFT) is connected with the anode of described Organic Light Emitting Diode, and the negative electrode of described Organic Light Emitting Diode is connected with second source; Described first power supply and second source, all as the driving power of described Organic Light Emitting Diode, are respectively described Organic Light Emitting Diode and provide supply voltage.
Optionally, in described image element circuit, described pulse-width signal is divided into multiple sub-field signals in a drive cycle, and described multiple sub-field signals timesharing also sequentially exports.
Optionally, in described image element circuit, described pulse-width signal is divided into 8 sub-field signals in a drive cycle, and the duration prorate 2 of described 8 sub-field signals increases successively, and the interval time of described 8 sub-field signals is identical.
Optionally, in described image element circuit, described pulse-width signal is exported by GIP driving circuit.
Optionally, described image element circuit is only made up of described the first film transistor and the second thin film transistor (TFT).
Accordingly, the utility model additionally provides a kind of active matrix/organic light emitting display, and described active matrix/organic light emitting display comprises image element circuit as above.
In the image element circuit provided at the utility model and driving method thereof and active matrix/organic light emitting display, digital drive mode is adopted to drive pixel light emission, namely the high-speed switch of the second thin film transistor (TFT) is controlled by pulse-width signal to modulate its dutycycle, thus realize the display of full-color picture, in described image element circuit, need not electric capacity be set, therefore the structure of image element circuit is more simple, and power consumption is lower.Further, owing to not having the aperture opening ratio of capacitive effect pixel, therefore the aperture opening ratio of pixel is higher, adopts the active matrix/organic light emitting display of described image element circuit to have higher brightness, and more easily improves resolution.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the image element circuit of the active matrix/organic light emitting display of prior art;
Fig. 2 is the circuit diagram of the image element circuit of the utility model embodiment;
Fig. 3 is the sequential chart of the driving method of the image element circuit of the utility model embodiment;
Fig. 4 is the schematic diagram utilizing the image element circuit of the utility model embodiment to show different GTG.
Embodiment
Below in conjunction with the drawings and specific embodiments, a kind of image element circuit that the utility model proposes and active matrix/organic light emitting display are described in further detail.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, aid illustration the utility model embodiment lucidly.
Please refer to Fig. 2, it is the structural representation of the image element circuit of the utility model embodiment.As shown in Figure 2, described image element circuit 20 comprises: the first film transistor T1 and the second thin film transistor (TFT) T2; The grid of described the first film transistor T1 is connected with sweep trace Sn, described sweep trace Sn is used for providing pulse-width signal (PWM), the grid of described second thin film transistor (TFT) T2 is connected with the drain electrode of described the first film transistor T1, the ON time of described second thin film transistor (TFT) T2 and controlling by described pulse-width signal closing time.
Concrete, the grid of described the first film transistor T1 is connected with sweep trace Sn, grid (gate in pane in described sweep trace Sn and panel, be called for short GIP) connection of driving circuit (not shown), the pulse-width signal that described GIP driving circuit exports is provided to the grid of described the first film transistor T1 by described sweep trace Sn, and controls the high-speed switch of described second thin film transistor (TFT) T2.Described pulse-width signal passes through the ON time and the closing time that control described second thin film transistor (TFT) T2, to modulate its dutycycle (DutyCycle).The GTG (gray scale, also claims color range) corresponding to dutycycle difference of pulse-width signal is then different.
In the present embodiment, described the first film transistor T1 and the second thin film transistor (TFT) T2 is P-type TFT.As shown in Figure 2, when the signal that described sweep trace Sn provides is low level, described the first film transistor T1 conducting, the data voltage Data that data line Dm provides transfers to the grid of described second thin film transistor (TFT) T2, when the signal that described sweep trace Sn provides is high level, described the first film transistor T1 ends, now the grid of described second thin film transistor (TFT) T2 keeps data voltage Data constant, until during next cycle the first film transistor T1 conducting, next frame data voltage Data writes, thus refreshes the grid voltage of described second thin film transistor (TFT) T2.Wherein, conducting and the cut-off of described second thin film transistor (TFT) T2 are that the data voltage Data provided by data line Dm determines, and the ON time of described second thin film transistor (TFT) T2 and closing time are the pulse-width signal control provided by described sweep trace Sn.
In order to the GTG of displaying chart picture, usually a drive cycle (such as a frame) is divided into multiple subfield and timesharing driving.Such as, during with 256 GTG level display images, a drive cycle is divided into 8 sub-field signals, and the interval time of 8 sub-field signals is identical, duration of 8 sub-field signals then prorate 2 increase successively, namely the ratio of the duration of 8 sub-field signals is 2
n(n=0,1,2,3,4,5,6,7).
Please refer to Fig. 3, it is the sequential chart of the driving method of the image element circuit of the utility model embodiment.As shown in Figure 3, a drive cycle is divided into 8 sub-field signals by the difference according to dutycycle, be respectively SF1 to SF8, wherein, the GTG that SF1 is corresponding is 1, the GTG that SF2 is corresponding is 2, the GTG that SF3 is corresponding is 4, the GTG that SF4 is corresponding is 8, the GTG that SF5 is corresponding is GTG that 16, SF6 is corresponding be the display GTG that 32, SF7 is corresponding is 64, the GTG that SF8 is corresponding is 128, and in a drive cycle, SF1, SF2, SF3, SF4, SF5, SF6, SF7 and SF8 occur at the same time successively.
Please continue to refer to Fig. 2, the source electrode of described second thin film transistor (TFT) T2 is connected with the first power supply ELVDD, the drain electrode of described second thin film transistor (TFT) T2 is connected with the anode of described Organic Light Emitting Diode OLED, the negative electrode of described Organic Light Emitting Diode OLED is connected with second source ELVSS, described first power supply ELVDD and second source ELVSS is used as the driving power of described Organic Light Emitting Diode OLED, for providing supply voltage for described Organic Light Emitting Diode OLED.Wherein, described first power supply ELVDD is generally high level voltage source, and described second source ELVSS is generally low level voltage source.The source electrode of described the first film transistor T1 is connected with data line Dm, the data voltage Data of described data line Dm for providing driving chip to provide.When described second thin film transistor (TFT) T2 conducting, the data voltage Data that data line Dm provides writes, and described Organic Light Emitting Diode OLED starts luminescence thus.
Please refer to Fig. 4, it is the schematic diagram that the image element circuit of the utility model embodiment shows different GTG.As shown in Figure 4,0 represents that the data voltage Data that data line Dm provides is low level, 1 represents that the data voltage Data that data line Dm provides is high level, when SF1 to SF8 is low level, the GTG sum of 8 subfields is 0, show entirely black, when SF1 is high level, when SF2 to SF8 is low level, the GTG sum of 8 subfields is 1, when SF2 is high level, when SF1, SF3 to SF8 are low level, the GTG sum of 8 subfields is 2, the like, when SF1 to SF8 is high level, the GTG sum of 8 subfields is 255, and display is complete white.
In the present embodiment, not traditional analog-driven mode for showing the type of drive on polychrome rank, but digital drive mode.Described second thin film transistor (TFT) T2 is as digital drive switching transistor, and its conducting and closing time are that the pulse-width signal provided by described sweep trace Sn controls.The high-speed switch of described second thin film transistor (TFT) T2 is controlled by described pulse-width signal, to modulate the dutycycle of pulse-width signal, thus produce multiple subfield, each subfield is corresponding specific GTG respectively, in a drive cycle, the sub-field signals of different GTG exports with timesharing and according to the mode of particular order, and then utilize the visual persistence phenomenon of human eye to reach the object showing full-color picture, that is carry out colour mixture in time.
Described image element circuit 20 is a kind of 2T0C type circuit structures, only has 2 thin film transistor (TFT)s, without any electric capacity.Visible, the structure of described image element circuit 20 is more simple, and the power consumption of described image element circuit 20 is lower.Meanwhile, owing to not having capacitive effect aperture opening ratio, the pixel of described image element circuit 20 is therefore adopted to have higher aperture opening ratio.Thus, adopt the active matrix/organic light emitting display ratio of image element circuit 20 to be easier to obtain high brightness and high PPI (Pixels Per Inch) value, wherein, PPI is the unit of image resolution ratio, and the PPI value of image is higher, then resolution is higher.
On the other hand, because described image element circuit 20 need not arrange memory capacitance, therefore described image element circuit 20 does not need to utilize metal level to make electric capacity in the fabrication process, and therefore manufacturing process is simpler.And the simplification of manufacturing process, not only can reduce manufacturing cost, yield can also be improved further.
Accordingly, the utility model additionally provides a kind of active matrix/organic light emitting display, and described active matrix/organic light emitting display comprises image element circuit 20 as above.
To sum up, in the image element circuit provided at the utility model and active matrix/organic light emitting display, digital drive mode is adopted to drive pixel light emission, namely the high-speed switch of the second thin film transistor (TFT) is controlled by pulse-width signal to modulate its dutycycle, thus realize the display of full-color picture, need not arrange electric capacity in described image element circuit, therefore the structure of image element circuit is more simple, and power consumption is lower.Further, owing to not having the aperture opening ratio of capacitive effect pixel, therefore the aperture opening ratio of pixel is higher, adopts the active matrix/organic light emitting display of described image element circuit to have higher brightness, and more easily improves resolution.
Foregoing description is only the description to the utility model preferred embodiment; any restriction not to the utility model scope; any change that the those of ordinary skill in the utility model field does according to above-mentioned disclosure, modification, all belong to the protection domain of claims.
Claims (10)
1. an image element circuit, is connected with Organic Light Emitting Diode and for controlling described organic light-emitting diode, it is characterized in that, comprising: the first film transistor and the second thin film transistor (TFT); The grid of described the first film transistor is connected with sweep trace, described sweep trace is used for providing pulse-width signal, the grid of described second thin film transistor (TFT) is connected with the drain electrode of described the first film transistor, and ON time and the closing time of described second thin film transistor (TFT) control by described pulse-width signal.
2. image element circuit as claimed in claim 1, it is characterized in that, the source electrode of described the first film transistor is connected with data line, and described data line is used for providing data voltage, and described Organic Light Emitting Diode is luminous according to described data voltage when described second thin film transistor (TFT) conducting.
3. image element circuit as claimed in claim 2, it is characterized in that, the pulse-width signal that the conducting of described the first film transistor and cut-off are provided by described sweep trace controls, and the data voltage that the conducting of described second thin film transistor (TFT) and cut-off are provided by described data line controls.
4. image element circuit as claimed in claim 1, it is characterized in that, described the first film transistor and the second thin film transistor (TFT) are P-type TFT.
5. image element circuit as claimed in claim 1, it is characterized in that, the source electrode of described second thin film transistor (TFT) is connected with the first power supply, and the drain electrode of described second thin film transistor (TFT) is connected with the anode of described Organic Light Emitting Diode, and the negative electrode of described Organic Light Emitting Diode is connected with second source; Described first power supply and second source, all as the driving power of described Organic Light Emitting Diode, are respectively described Organic Light Emitting Diode and provide supply voltage.
6. image element circuit as claimed in claim 1, it is characterized in that, described pulse-width signal is divided into multiple sub-field signals in a drive cycle, and described multiple sub-field signals timesharing also sequentially exports.
7. image element circuit as claimed in claim 6, it is characterized in that, described pulse-width signal is divided into 8 sub-field signals in a drive cycle, and the duration prorate 2 of described 8 sub-field signals increases successively, and the interval time of described 8 sub-field signals is identical.
8. image element circuit as claimed in claims 6 or 7, it is characterized in that, described pulse-width signal is exported by GIP driving circuit.
9. image element circuit as claimed in claim 1, it is characterized in that, described image element circuit is only made up of described the first film transistor and the second thin film transistor (TFT).
10. an active matrix/organic light emitting display, is characterized in that, comprises the image element circuit according to any one of claim 1 to 9.
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| CN201420868843.9U CN204390687U (en) | 2014-12-31 | 2014-12-31 | Image element circuit and active matrix/organic light emitting display |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104575380A (en) * | 2014-12-31 | 2015-04-29 | 昆山工研院新型平板显示技术中心有限公司 | Pixel circuit and active matrix organic light-emitting display |
| WO2018188327A1 (en) * | 2017-04-14 | 2018-10-18 | 京东方科技集团股份有限公司 | Pixel circuit and drive method therefor, display panel, and display apparatus |
| CN110111727A (en) * | 2019-06-03 | 2019-08-09 | 京东方科技集团股份有限公司 | A kind of pixel-driving circuit and its driving method, display device |
| CN111540308A (en) * | 2020-05-13 | 2020-08-14 | 昆山国显光电有限公司 | Pixel driving circuit, driving method and display device |
| CN113808532A (en) * | 2021-08-25 | 2021-12-17 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit and display panel |
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2014
- 2014-12-31 CN CN201420868843.9U patent/CN204390687U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104575380A (en) * | 2014-12-31 | 2015-04-29 | 昆山工研院新型平板显示技术中心有限公司 | Pixel circuit and active matrix organic light-emitting display |
| WO2018188327A1 (en) * | 2017-04-14 | 2018-10-18 | 京东方科技集团股份有限公司 | Pixel circuit and drive method therefor, display panel, and display apparatus |
| US11170716B2 (en) | 2017-04-14 | 2021-11-09 | Boe Technology Group Co., Ltd. | Pixel circuit, driving method thereof, display panel, and display device |
| CN110111727A (en) * | 2019-06-03 | 2019-08-09 | 京东方科技集团股份有限公司 | A kind of pixel-driving circuit and its driving method, display device |
| US11289009B2 (en) | 2019-06-03 | 2022-03-29 | Beijing Boe Optoelectronics Technology Co., Ltd. | Pixel driving circuit, driving method, and display apparatus |
| CN111540308A (en) * | 2020-05-13 | 2020-08-14 | 昆山国显光电有限公司 | Pixel driving circuit, driving method and display device |
| CN111540308B (en) * | 2020-05-13 | 2021-09-07 | 昆山国显光电有限公司 | Pixel driving circuit, driving method and display device |
| CN113808532A (en) * | 2021-08-25 | 2021-12-17 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit and display panel |
| CN113808532B (en) * | 2021-08-25 | 2022-09-27 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit and display panel |
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