CN204360353U - Buffer cell, touch drive circuit and display device - Google Patents
Buffer cell, touch drive circuit and display device Download PDFInfo
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- CN204360353U CN204360353U CN201520051760.5U CN201520051760U CN204360353U CN 204360353 U CN204360353 U CN 204360353U CN 201520051760 U CN201520051760 U CN 201520051760U CN 204360353 U CN204360353 U CN 204360353U
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Abstract
The utility model provides buffer cell, touch drive circuit and display device, described touch drive circuit is used in display device, display device comprises display panel, display panel comprises grid line, public electrode wire, pixel electrode and public electrode, public electrode wire is used as the touch scanning signals line in touch drive circuit, described buffer cell comprises the buffer cell input end and the buffer cell output terminal for being connected with corresponding grid line that the output terminal for the shift register cell to gate driver circuit is connected, described buffer cell is used for will inputing to the voltage-regulation of grid line to target voltage in the touch-control stage, the difference of voltage when target voltage at least accesses high level signal on touch scanning signals line and on pixel electrode is less than predetermined value.The utility model also provides a kind of touch drive circuit, display device.The utility model can reduce the generation of the transconductance curve shift phenomenon of the thin film transistor (TFT) in pixel cell, thus extends the serviceable life of thin film transistor (TFT).
Description
Technical field
The utility model relates to display technique field, is specifically related to a kind of buffer cell for touch drive circuit, a kind of touch drive circuit and a kind of display device.
Background technology
Along with mobile product is as more and more lightening in the product such as mobile phone, panel computer and become more meticulous, more and more higher to the requirement of screen resolution, require more and more thinner to screen thickness, the simple built-in type touch display screen of structure more and more becomes the main flow of market development.
Built-in type touch display screen comprises display panel, and described display panel comprises grid line, public electrode wire, pixel electrode and public electrode, and described public electrode wire is used as the touch scanning signals line in described touch drive circuit.
The work period of built-in type touch display screen comprises display stage and touch-control stage, and in the touch-control stage, the touch scanning signals line that described public electrode wire is used as in described touch drive circuit carries out timesharing driving.In the touch-control stage, no longer provide display to display panel, therefore, only need to utilize the pressure reduction between pixel electrode and public electrode to keep the deflection angle of liquid crystal molecule in the touch-control stage.Because touch scanning signals line is connected with public electrode, therefore, the voltage on public electrode is different from the voltage during display stage, in order to maintain the deflection angle of liquid crystal molecule, need to change the voltage on pixel electrode, to keep the pressure reduction between pixel electrode and public electrode.After touch-screen work certain hour, often occur that the curve of the thin film transistor (TFT) of pixel cell produces the phenomenon of drift, thus affect the life-span of thin film transistor (TFT).
Utility model content
The purpose of this utility model is to provide a kind of buffer cell for touch drive circuit, touch drive circuit and display device, and the phenomenon of drift occurs with the transconductance curve reducing the thin film transistor (TFT) in pixel cell.
To achieve these goals, the utility model provides a kind of buffer cell for touch drive circuit, described touch drive circuit is used in display device, described display device comprises display panel, described display panel comprises grid line, public electrode wire, pixel electrode and public electrode, described public electrode wire is used as the touch scanning signals line in described touch drive circuit, described buffer cell comprises the buffer cell input end and the buffer cell output terminal for being connected with corresponding grid line that the output terminal for the shift register cell to gate driver circuit is connected, described buffer cell is used for will inputing to the voltage-regulation of grid line to target voltage in the touch-control stage, the difference of voltage when described target voltage at least accesses high level signal on described touch scanning signals line and on described pixel electrode is less than predetermined value.
Preferably, the output voltage of the shifting deposit unit of described gate driver circuit is greater than when described target voltage at least accesses high level signal on described touch scanning signals line.
Preferably, be greater than the output voltage of described shift register cell when described target voltage accesses high level signal on touch scanning signals line, when touch scanning signals line accesses low level signal, equal the output voltage of described shift register cell.
Preferably, described target voltage is all greater than the output voltage of described shift register cell in the whole touch-control stage.
Preferably, in the touch-control stage, the timesharing access high level of 10V and the low level of 0V on described touch scanning signals line, the output voltage of described shift register cell is-8V, the absolute value of the pressure reduction between described pixel electrode and described public electrode is 5V, and described predetermined value is 23V.
Preferably, described buffer cell comprises high level input end, low level input end, the target voltage input end providing target voltage, the first gating module and the second gating module, the first input end of described first gating module is connected with described high level input end, second input end of described first gating module is formed as described buffer cell input end, 3rd input end of described first gating module is connected with the output terminal of described second gating module, and the output terminal of described first gating module is formed as described buffer cell output terminal; The first input end of described second gating module is connected with described low level input end, and the second input end of described second gating module is connected with described target voltage input end; Wherein,
At the charging sub in display stage, the output terminal conducting of described high level input end and described first gating module;
Sub is kept, the output terminal conducting of described low level input end and described first gating module at the voltage in display stage;
In the touch-control stage, the output terminal conducting of described target voltage input end and described first gating module.
Preferably, described first gating module comprises the first film transistor and the second thin film transistor (TFT), the grid of described the first film transistor is all connected with the output terminal of described shift register cell with the grid of described second thin film transistor (TFT), first pole of described the first film transistor is connected with described high level input end, second pole of described the first film transistor is extremely connected with first of described second thin film transistor (TFT), and the second pole of described second thin film transistor (TFT) is connected with the output terminal of described second gating module; Wherein,
The first film transistor described in the output voltage control of described shift register cell, in the charging sub conducting in display stage, turns off in the touch-control stage;
Second thin film transistor (TFT) described in the output voltage control of described shift register cell turns off at the charging sub in display stage, keeps sub and the conducting of touch-control stage at the voltage in display stage.
Preferably, second gating module comprises the first gating switch and the second gating switch, described first gating switch is connected between the output terminal of described low level input end and described second gating module, described second gating switch is connected between the output terminal of described target voltage input end and described second gating module, wherein
Described first gating switch, in the charging sub conducting in display stage, keeps sub and touch-control stage to turn off at the voltage in display stage; Described second gating switch, in the conducting of touch-control stage, turns off in the display stage.
Preferably, described buffer cell also comprises control module, and this control module, for controlling the charging sub conducting of described first gating switch in the display stage, turns off in the touch-control stage; And control described second gating switch in the conducting of touch-control stage, turn off in the display stage.
Correspondingly, the utility model also provides a kind of touch drive circuit, comprises the above-mentioned buffer cell that the utility model provides.
Correspondingly, the utility model also provides a kind of display device, comprise above-mentioned touch drive circuit and gate driver circuit that the utility model provides, described gate driver circuit comprises the multi-stage shift register unit of cascade, every grade of all corresponding described buffer cell of described shift register cell, the output terminal of described shift register cell is connected with described buffer cell input end.
Preferably, described shift register cell exports high level at the charging sub in display stage, and described shift register cell keeps sub and touch-control stage output low level at the voltage in display stage.
In the utility model, gate line voltages is adjusted to target voltage when at least accessing high level signal on described touch scanning signals line by described buffer cell, thus the difference of gate line voltages and pixel electrode voltage is reduced, voltage between the grid that is connected with grid line and the source electrode be connected with pixel electrode thus can be made to reduce; And for thin film transistor (TFT), the transconductance curve of thin film transistor (TFT) occurs drift phenomenon and between grid and source electrode, voltage has direct relation, voltage is larger, more easily there is drift phenomenon, therefore, buffer cell of the present utility model can reduce the generation of the transconductance curve drift phenomenon of thin film transistor (TFT) after being reduced by voltage between the grid of thin film transistor (TFT) and source electrode effectively, thus extend the serviceable life of thin film transistor (TFT), and then improve the quality of display device.
Accompanying drawing explanation
Accompanying drawing is used to provide further understanding of the present utility model, and forms a part for instructions, is used from explanation the utility model, but does not form restriction of the present utility model with embodiment one below.In the accompanying drawings:
Fig. 1 is the sequential chart of each electrode voltage of touch-screen pixel cell in prior art;
Fig. 2 is the sequential chart of each electrode voltage of pixel cell in the first embodiment of the present utility model;
Fig. 3 is the sequential chart of each electrode voltage of pixel cell in the second embodiment of the present utility model;
Fig. 4 is the structural representation of the buffer cell provided in embodiment of the present utility model;
Wherein, Reference numeral is: 10, the first gating module; 20, the second gating module; 30, shift register cell; 40, control module; M1, the first film transistor; M2, the second thin film transistor (TFT); SW1, the first gating switch; SW2, the second gating switch; VDD, high level input end; Vlow, low level input end; Vgoal, target voltage input end.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail.Should be understood that, embodiment described herein, only for instruction and explanation of the utility model, is not limited to the utility model.
As first aspect of the present utility model, a kind of buffer cell for touch drive circuit is provided, described touch drive circuit is used in display device, described display device comprises display panel, described display panel comprises grid line, public electrode wire, pixel electrode, described public electrode wire is used as the touch scanning signals line in described touch drive circuit, wherein, described buffer cell comprises the buffer cell input end and the buffer cell output terminal for being connected with corresponding grid line that the output terminal for the shift register cell to gate driver circuit is connected, described buffer cell is used for will inputing to the voltage-regulation of grid line to target voltage in the touch-control stage, when described target voltage at least accesses high level signal on touch scanning signals line and the difference of pixel electrode voltage be less than predetermined value.
Touch-control stage (the T in Fig. 1 in existing touch drive circuit
nand T
n+1stage), gate driver circuit provides low level signal to grid line, and public electrode wire is used as touch scanning signals line.In order to maintain the deflection angle of liquid crystal molecule, need to change the voltage on pixel electrode, to keep the pressure reduction between pixel electrode and public electrode.Consider reversal of poles, when positive polarity, (the t in Fig. 1 when touch scanning signals line accesses high level signal
hwhen in stage, Vcom is high level), pixel electrode voltage Vpix is higher than the voltage on touch scanning signals line.Predetermined value in the utility model can be the summation of the difference of the low level signal that high level signal on the difference of high level signal on pixel electrode voltage Vpix and touch-control sweep trace and touch-control sweep trace and shift register cell export.The utility model is by the regulating action of described buffer cell, make the difference of gate line voltages Vgate and pixel electrode voltage Vpix be less than predetermined value, thus voltage Vgs between the grid be connected with grid line of thin film transistor (TFT) and the source electrode be connected with pixel electrode is reduced; And for thin film transistor (TFT), the transconductance curve of thin film transistor (TFT) occurs drift phenomenon and between grid and source electrode, voltage Vgs has direct relation, Vgs is larger, more easily there is drift phenomenon, thus, buffer cell of the present utility model can reduce the generation of the transconductance curve drift phenomenon of thin film transistor (TFT) after being reduced by voltage Vgs between the grid of thin film transistor (TFT) and source electrode effectively, and then extends the serviceable life of thin film transistor (TFT).
(the t in Fig. 2 and Fig. 3 when at least accessing high level signal to make described target voltage on touch scanning signals line
hstage) be less than predetermined value with the difference of pixel electrode voltage, be greater than the output voltage of the shifting deposit unit of gate driver circuit when described target voltage at least accesses high level signal on touch scanning signals line.Namely the output voltage of shift register cell is greater than when gate line voltages Vgate at least accesses high level signal on touch scanning signals line.When described predetermined value is the summation of the difference of the low level signal that high level signal on the difference of high level signal on pixel electrode voltage Vpix and touch-control sweep trace and touch-control sweep trace and shift register cell export, the difference of gate line voltages Vgate and pixel electrode voltage Vpix will be less than described predetermined value.In other words, in terms of existing technologies, buffer cell makes gate line voltages Vgate at least at t
hincrease during the stage, and usually at t
hduring signal, the voltage Vgs between the grid of thin film transistor (TFT) and source electrode is comparatively large, and therefore, the raising of gate line voltages Vgate makes the voltage Vgs between thin-film transistor gate and source electrode reduce.
As a kind of embodiment of the present utility model, as shown in Figure 2, (t when described target voltage accesses high level signal on touch scanning signals line
hstage) be greater than the output voltage of described shift register cell, (t when touch scanning signals line accesses low level signal
lstage) equal the output voltage of described shift register cell.At the touch-control stage (T of N frame
nstage), timesharing access high level signal and low level signal on touch scanning signals line, pixel electrode voltage Vpix is greater than high level voltage on touch scanning signals line to show as positive polarity, therefore, at t
hwhen stage gate line voltages Vgate raises with the output voltage being greater than shift register cell, the difference of pixel electrode voltage Vpix and gate line voltages Vgate can be reduced; (the t when touch scanning signals line accessing low level voltage
lstage), due to the voltage V on touch scanning signals line
txlower, therefore can maintain pressure reduction without the need to higher pixel electrode voltage Vpix.In the whole touch-control stage, the difference of pixel electrode voltage Vpix and gate line voltages Vgate is also less, less on the transconductance curve impact of thin film transistor (TFT).Further, under this embodiment, the voltage Vgs in pixel cell between the grid of thin film transistor (TFT) and source electrode is at t
hstage and t
lthe polarity in stage is identical, anti-stop polarity saltus step, improves the stability of touch-control.
As another kind of embodiment of the present utility model, as shown in Figure 3, described target voltage is all greater than the output voltage of shift register cell in the whole touch-control stage.Such as, described target voltage is zero in the whole touch-control stage.Under this embodiment, in the whole touch-control stage, gate line voltages Vgate raises to some extent before regulating, and makes the voltage Vgs in the pixel cell after regulating between the grid of thin film transistor (TFT) and source electrode at the t in touch-control stage
hstage and t
lstage all reduces.When target voltage was consistent in the whole touch-control stage, for providing the output of the circuit held stationary of target voltage, do not need the value changing target voltage according to the change of the voltage on touch scanning signals line, thus be more convenient for controlling.
Particularly, as shown in Figures 2 and 3, in the touch-control stage, the timesharing access high level of 10V and the low level (namely public electrode voltages Vcom is the square-wave signal of 10V, 0V) of 0V on described touch scanning signals line, the output voltage of described shift register cell is-8V, the absolute value of the pressure reduction between described pixel electrode and described public electrode is 5V, and described predetermined value is 23V.
Be positive polarity (+5V), be negative polarity (-5V) at N+1 frame for the pressure reduction between pixel electrode and described public electrode at N frame, at the touch-control stage (T of N frame
nstage), (the t when voltage on touch scanning signals line is 10V
hstage), pixel electrode voltage Vpix is 15V, (the t when voltage on touch scanning signals line is 0V
lstage), the voltage Vpix of pixel electrode is 5V; At the touch-control stage (T of N+1 frame
n+1stage), when the voltage on touch scanning signals line is 10V, pixel electrode voltage Vpix is 5V, and when the voltage on touch scanning signals line is 0V, pixel electrode voltage Vpix is-5V.
Therefore, before buffer cell regulates gate line voltages Vgate, as shown in Figure 1, at N frame t
hin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate voltage is 15+8=23V, at t
lin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate voltage is 5-(-8)=13V; At the t of N+1 frame
hin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate voltage is 5-(-8)=13V, at t
lin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate is-5-(-8)=3V.Can find out, in the touch-control stage, the difference of pixel electrode Vpix and gate line voltages Vgate is 23V to the maximum, after buffer cell in the utility model adjusts gate line voltages Vgate, the difference of pixel electrode Vpix and gate line voltages Vgate will be less than 23V, thus make the voltage Vgs between the grid of thin film transistor (TFT) and source electrode be less than 23V.
In embodiment as shown in Figure 2, at the t of N frame
hthe t of stage and N+1 frame
hin the stage, gate line voltages Vgate is all increased to 0V, therefore, at the t of N frame
hin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate is 15V, at the t of N frame
lin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate is 5-(-8)=13V, at the t of N+1 frame
hin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate is 5-0=5V, at the t of N+1 frame
lstage, the difference of pixel electrode Vpix and gate line voltages Vgate is-5-(-8)=3V, can find out, the difference of touch-control stage pixel electrode Vpix and gate line voltages Vgate is 15V to the maximum, namely the voltage between the grid of thin film transistor (TFT) and source electrode is 15V to the maximum, is less than 23V of the prior art.
In embodiment as shown in Figure 3, at the T of N frame
nthe T of stage and N+1 frame
n+1in the stage, gate line voltages Vgate is all increased to 0V, at this moment, at the t of N frame
hin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate is 15V, at the t of N frame
lin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate is 5V, at the t of N+1 frame
hin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate is 5V, at the t of N+1 frame
lin the stage, the difference of pixel electrode Vpix and gate line voltages Vgate is 5V, can find out, the difference of touch-control stage pixel electrode Vpix and gate line voltages Vgate is maximum is also 15V, is less than 23V of the prior art.
Usually, in gate driver circuit, the voltage that shift register cell exports is the voltage that gate driver circuit exports to grid line.Buffer cell provided by the utility model is suitable for this situation.
Buffer cell provided by the utility model is also applicable to another situation: the voltage that shift register cell exports is contrary with the polarity of voltage that gate driver circuit exports to grid line.In this case, as shown in Figure 4, described buffer cell in the utility model can comprise high level input end VDD, low level input end Vlow, the target voltage input end Vgoal of target voltage is provided, first gating module 10 and the second gating module 20, the first input end of the first gating module 10 is connected with high level input end VDD, second input end of the first gating module 10 is formed as described buffer cell input end, namely be connected with the output terminal of shift register cell 30, 3rd input end of the first gating module 10 is connected with the output terminal of the second gating module 20, the output terminal of the first gating module 10 is formed as described buffer cell output terminal, namely be connected with the grid line corresponding to shift register cell, the first input end of the second gating module 20 is connected with low level input end Vlow, and the second input end of the second gating module 20 is connected with target voltage input end Vgoal, wherein,
At the charging sub (the sc stage in Fig. 2 and Fig. 3) in display stage, the output terminal conducting of high level input end VDD and the first gating module 10, to make high voltage signal input to corresponding grid line, thus open the thin film transistor (TFT) of this row pixel cell;
Sub (the ss stage in Fig. 2 and 3) is kept at the voltage in display stage, the output terminal conducting of low level input end Vlow and the first gating module 10, thus low voltage signal is inputed to corresponding grid line, the thin film transistor (TFT) of pixel cell of changing one's profession is turned off;
In the touch-control stage, the output terminal conducting of target voltage input end Vgoal and the first gating module 10, to input to corresponding grid line by target voltage signal.
Particularly, as shown in Figure 4, first gating module 10 can comprise the first film transistor M1 and the second thin film transistor (TFT) M2, the grid of the first film transistor M1 is all connected with the output terminal of shift register cell 30 with the grid of the second thin film transistor (TFT) M2, first pole of the first film transistor M1 is connected with high level input end VDD, second pole of the first film transistor M2 is extremely connected with first of the second thin film transistor (TFT) M2, and second pole of the second thin film transistor (TFT) M2 is connected with the output terminal of the second gating module 20; Wherein,
The output voltage of shift register cell 30 can control the charging sub conducting of the first film transistor M1 in the display stage, turns off in the touch-control stage;
The voltage of shift register cell 30 output terminal can control described second thin film transistor (TFT) M2 and turn off, in the conducting of touch-control stage in the display stage.
Above-mentioned the first film transistor M1 can be P-type TFT, and the second thin film transistor (TFT) M2 can N-type TFT.At the charging sub in display stage, shift register cell output LOW voltage signal, to make the first film transistor M1 conducting, the second thin film transistor (TFT) M2 turns off, and the high voltage signal of high level input end VDD inputs to grid line; Sub is kept at the voltage in display stage, shift register cell output HIGH voltage signal, to make the second thin film transistor (TFT) M2 conducting, the first film transistor M1 turns off, and the low voltage signal of low level input end Vlow exports grid line to by the second gating module and the second thin film transistor (TFT) M2; In the touch-control stage, shift register cell output HIGH voltage signal, to make the second thin film transistor (TFT) M2 conducting, the first film transistor M1 turns off, the target voltage of target signal input Vgoal exports grid line to by the second gating module and the second thin film transistor (TFT) M2, thus gate line voltages Vgate is adjusted to target voltage.
As shown in Figure 4, second gating module 20 can comprise the first gating switch SW1 and the second gating switch SW2, first gating switch SW1 is connected between the output terminal of low level input end Vlow and the second gating module 20, second gating switch SW2 is connected between the output terminal of target voltage input end Vgoal and the second gating module 20, wherein, first gating switch SW1, in the charging sub conducting in display stage, keeps sub and touch-control stage to turn off at the voltage in display stage; Second gating switch SW2, in the conducting of touch-control stage, turns off in the display stage.
As shown in Figures 2 and 3, at the charging sub (sc stage) in display stage, the output voltage control the first film transistor M1 conducting of shift register cell, second thin film transistor (TFT) M2 turns off, first gating switch SW1 conducting simultaneously, second gating switch SW2 turns off, and therefore, the high voltage signal that high level input end VDD provides exports grid line to by the first film transistor M1; Sub (ss stage) is kept at the voltage in display stage, the output voltage control the first film transistor M1 of shift register cell turns off, second thin film transistor (TFT) M2 conducting, first gating switch SW1 conducting simultaneously, second gating switch SW2 turns off, therefore, the low voltage signal that low level input end Vlow provides inputs to grid line by the first gating switch SW1 and the second thin film transistor (TFT) M2; At touch-control stage (T
nand T
n+1stage), the output voltage control the first film transistor M1 of shift register cell turns off, second thin film transistor (TFT) M2 conducting, first gating switch SW1 conducting simultaneously, second gating switch SW2 turns off, now, the target voltage that target voltage input end Vgoal provides inputs to grid line by the second gating switch SW2 and the second thin film transistor (TFT) M2.
Described buffer cell can also comprise control module 40, and this control module 40, for controlling the charging sub conducting of the first gating switch SW1 in the display stage, turns off in the touch-control stage; And control the second gating switch SW2 in the conducting of touch-control stage, turn off in the display stage.
The form of the utility model to the first gating switch SW1 and the second gating switch SW2 does not do concrete restriction, such as, first gating switch SW1 and the second gating switch SW2 can be thin film transistor (TFT), and both grids are all connected with control circuit, by regulating the grid voltage of two thin film transistor (TFT)s to control the turn-on and turn-off of the first gating switch SW1 and the second gating switch SW2.
As second aspect of the present utility model, a kind of touch drive circuit is provided, comprises above-mentioned buffer cell.
As the 3rd aspect of the present utility model, a kind of display device is provided, described display device comprises above-mentioned touch drive circuit and gate driver circuit, described gate driver circuit comprises the multi-stage shift register unit of cascade, every grade of all corresponding described buffer cell of described shift register cell, the output terminal of described shift register cell is connected with described buffer cell input end.
Particularly, described shift register cell exports high level at the charging sub in display stage, and described shift register cell keeps sub and touch-control stage output low level at the voltage in display stage.
As noted before, described buffer cell comprises the first gating module and the second gating module, and the first gating module comprises the first film transistor and the second thin film transistor (TFT), and the second gating module comprises the first gating switch and the second gating switch.At the charging sub in display stage, shift register cell output low level, to control the first film transistor turns, second thin film transistor (TFT) turns off, thus by the output terminal conducting of high level input end and gating module, export high level signal to grid line, open the thin film transistor (TFT) that this grid line is corresponding; Sub is kept at the voltage in display stage, shift register cell exports high level, to control the second thin film transistor (TFT) conducting, the first film transistor turns off, first gating switch conducting simultaneously, thus by the output terminal conducting of low level input end and gating module, export low level signal to grid line, turn off the thin film transistor (TFT) that this grid line is corresponding; In the touch-control stage, shift register cell exports high level, controls the second thin film transistor (TFT) conducting, the first film transistor turns off, the second gating switch conducting simultaneously, thus by the output terminal conducting of target voltage signal end and gating module, export target voltage signal to grid line.
As the 4th aspect of the present utility model, provide a kind of driving method of display device, the above-mentioned display device that described display device provides for the utility model, described driving method comprises:
Is inputed to the voltage-regulation of grid line the touch-control stage to target voltage, when described target voltage at least accesses high level signal on touch scanning signals line and the difference of pixel electrode voltage be less than predetermined value.
The structure of high level input end VDD, low level input end Vlow, target voltage input end Vgoal, the first gating module 10 and the second gating module 20 is comprised for buffer cell, the first input end of the first gating module 10 is connected with high level input end VDD, second input end of the first gating module 10 is formed as described buffer cell input end, 3rd input end of the first gating module 10 is connected with the output terminal of the second gating module 20, and the output terminal of the first gating module 10 is formed as described buffer cell output terminal; The first input end of the second gating module 20 is connected with low level input end Vlow, and the second input end of the second gating module 20 is connected with providing the target voltage input end Vgoal of target voltage; The above-mentioned step in the touch-control stage by the voltage-regulation to target voltage that input to grid line comprises: the output terminal conducting of control objectives voltage input end and the first gating module 10;
Described driving method also comprises:
At the charging sub in display stage, control the output terminal conducting of described high level input end and described first gating module;
Keep sub at the voltage in display stage, control the output terminal conducting of described low level input end and described first gating module.
First gating module 10 comprises the first film transistor M1 and the second thin film transistor (TFT) M2, the grid of the first film transistor M1 is all connected with the output terminal of shift register cell 30 with the grid of the second thin film transistor (TFT) M2, first pole of the first film transistor M1 is connected with high level input end VDD, second pole of the first film transistor M2 is extremely connected with first of the second thin film transistor (TFT) M2, and second pole of the second thin film transistor (TFT) M2 is connected with the output terminal of the second gating module 20; Second gating module 20 can comprise the first gating switch SW1 and the second gating switch SW2, first gating switch SW1 is connected between the output terminal of low level input end Vlow and the second gating module 20, and the second gating switch SW2 is connected between the output terminal of target voltage input end Vgoal and the second gating module 20.
The step of the output terminal conducting of described control objectives voltage signal inputs and described first gating module comprises: control the second gating switch SW2 and the second thin film transistor (TFT) M2 conducting, the first film transistor M1 turn off;
The step controlling the output terminal conducting of described high level input end and described first gating module comprises: control the first film transistor M1 conducting, the second thin film transistor (TFT) M2 turns off;
The step controlling the output terminal conducting of described low level input end and described first gating module comprises: control the first gating switch SW1 and the second thin film transistor (TFT) M2 conducting, the first film transistor M1 turn off.
The description of above-mentioned buffer cell, touch drive circuit and driving method thereof for providing the utility model, can find out, by the regulating action of described buffer cell, the difference of gate line voltages and pixel electrode voltage is reduced, thus voltage Vgs between the grid that is connected with grid line and the source electrode be connected with pixel electrode is reduced; And for thin film transistor (TFT), the transconductance curve of thin film transistor (TFT) occurs drift phenomenon and between grid and source electrode, bias voltage has direct relation, bias voltage is larger, more easily there is drift phenomenon, thus, buffer cell of the present utility model can reduce the generation of the transconductance curve drift phenomenon of thin film transistor (TFT) after being reduced by voltage between the grid of thin film transistor (TFT) and source electrode effectively, thus extend the serviceable life of thin film transistor (TFT), and then improve the quality of display device.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present utility model is described and adopts, but the utility model is not limited thereto.For those skilled in the art, when not departing from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement are also considered as protection domain of the present utility model.
Claims (12)
1. the buffer cell for touch drive circuit, described touch drive circuit is used in display device, described display device comprises display panel, described display panel comprises grid line, public electrode wire, pixel electrode and public electrode, described public electrode wire is used as the touch scanning signals line in described touch drive circuit, it is characterized in that, described buffer cell comprises the buffer cell input end and the buffer cell output terminal for being connected with corresponding grid line that the output terminal for the shift register cell to gate driver circuit is connected, described buffer cell is used for will inputing to the voltage-regulation of grid line to target voltage in the touch-control stage, the difference of voltage when described target voltage at least accesses high level signal on described touch scanning signals line and on described pixel electrode is less than predetermined value.
2. buffer cell according to claim 1, is characterized in that, is greater than the output voltage of the shifting deposit unit of described gate driver circuit when described target voltage at least accesses high level signal on described touch scanning signals line.
3. buffer cell according to claim 2, it is characterized in that, described target voltage is greater than the output voltage of described shift register cell when accessing high level signal on touch scanning signals line, equal the output voltage of described shift register cell when touch scanning signals line accesses low level signal.
4. buffer cell according to claim 2, is characterized in that, described target voltage is all greater than the output voltage of described shift register cell in the whole touch-control stage.
5. buffer cell according to claim 1, it is characterized in that, in the touch-control stage, the timesharing access high level of 10V and the low level of 0V on described touch scanning signals line, the output voltage of described shift register cell is-8V, the absolute value of the pressure reduction between described pixel electrode and described public electrode is 5V, and described predetermined value is 23V.
6. buffer cell as claimed in any of claims 1 to 5, it is characterized in that, described buffer cell comprises high level input end, low level input end, the target voltage input end of target voltage is provided, first gating module and the second gating module, the first input end of described first gating module is connected with described high level input end, second input end of described first gating module is formed as described buffer cell input end, 3rd input end of described first gating module is connected with the output terminal of described second gating module, the output terminal of described first gating module is formed as described buffer cell output terminal, the first input end of described second gating module is connected with described low level input end, and the second input end of described second gating module is connected with described target voltage input end, wherein,
At the charging sub in display stage, the output terminal conducting of described high level input end and described first gating module;
Sub is kept, the output terminal conducting of described low level input end and described first gating module at the voltage in display stage;
In the touch-control stage, the output terminal conducting of described target voltage input end and described first gating module.
7. buffer cell according to claim 6, it is characterized in that, described first gating module comprises the first film transistor and the second thin film transistor (TFT), the grid of described the first film transistor is all connected with the output terminal of described shift register cell with the grid of described second thin film transistor (TFT), first pole of described the first film transistor is connected with described high level input end, second pole of described the first film transistor is extremely connected with first of described second thin film transistor (TFT), and the second pole of described second thin film transistor (TFT) is connected with the output terminal of described second gating module; Wherein,
The first film transistor described in the output voltage control of described shift register cell, in the charging sub conducting in display stage, turns off in the touch-control stage;
Second thin film transistor (TFT) described in the output voltage control of described shift register cell turns off at the charging sub in display stage, keeps sub and the conducting of touch-control stage at the voltage in display stage.
8. buffer cell according to claim 6, it is characterized in that, second gating module comprises the first gating switch and the second gating switch, described first gating switch is connected between the output terminal of described low level input end and described second gating module, described second gating switch is connected between the output terminal of described target voltage input end and described second gating module, wherein
Described first gating switch, in the charging sub conducting in display stage, keeps sub and touch-control stage to turn off at the voltage in display stage; Described second gating switch, in the conducting of touch-control stage, turns off in the display stage.
9. buffer cell according to claim 8, is characterized in that, described buffer cell also comprises control module, and this control module, for controlling the charging sub conducting of described first gating switch in the display stage, turns off in the touch-control stage; And control described second gating switch in the conducting of touch-control stage, turn off in the display stage.
10. a touch drive circuit, is characterized in that, comprises the buffer cell in claim 1 to 9 described in any one.
11. 1 kinds of display device, it is characterized in that, comprise touch drive circuit according to claim 10 and gate driver circuit, described gate driver circuit comprises the multi-stage shift register unit of cascade, every grade of all corresponding described buffer cell of described shift register cell, the output terminal of described shift register cell is connected with described buffer cell input end.
12. display device according to claim 11, it is characterized in that, described shift register cell exports high level at the charging sub in display stage, and described shift register cell keeps sub and touch-control stage output low level at the voltage in display stage.
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| CN201520051760.5U CN204360353U (en) | 2015-01-26 | 2015-01-26 | Buffer cell, touch drive circuit and display device |
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| CN104503632A (en) * | 2015-01-26 | 2015-04-08 | 京东方科技集团股份有限公司 | Buffer unit, touch drive circuit, display device and drive method of display device |
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