CN204340014U - Resin streak structure is used in a kind of silicon chip cutting - Google Patents
Resin streak structure is used in a kind of silicon chip cutting Download PDFInfo
- Publication number
- CN204340014U CN204340014U CN201420690158.1U CN201420690158U CN204340014U CN 204340014 U CN204340014 U CN 204340014U CN 201420690158 U CN201420690158 U CN 201420690158U CN 204340014 U CN204340014 U CN 204340014U
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- Prior art keywords
- resin streak
- part resin
- transverse part
- streak
- inferior
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- 239000011347 resin Substances 0.000 title claims abstract description 132
- 229920005989 resin Polymers 0.000 title claims abstract description 132
- 238000005520 cutting process Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 17
- 239000010703 silicon Substances 0.000 title claims abstract description 17
- 239000000853 adhesive Substances 0.000 abstract description 8
- 239000003292 glue Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The utility model provides a kind of silicon chip cutting resin streak structure, comprise upper transverse part resin streak, inferior transverse part resin streak and vertical part resin streak, described upper transverse part resin streak is identical with inferior transverse part resin streak structure, the upper surface of described upper transverse part resin streak, inferior transverse part resin streak and vertical part resin streak is equipped with arc-shaped recess, and described upper transverse part resin streak, vertical part resin streak and inferior transverse part resin streak connect into " work " type structure in turn.The advantage that the utility model has is: upper transverse part resin streak and inferior transverse part resin streak are that wider resin streak can the silicon chip at available protecting monocrystalline two ends, avoid the situation of sliver; The vertical part resin streak connecting upper transverse part resin streak and inferior transverse part resin streak is narrower resin streak, can reduce the change of the cut state caused due to adhesive glue and resin streak; The utility model can both avoid the generation caused because resin streak is wide seriously to cut the problem of strain line, can eliminate again the situation of the monocrystalline two ends sliver caused because resin streak is narrow.
Description
Technical field
The invention belongs to silicon materials manufacture field, especially relates to a kind of silicon chip cutting resin streak structure.
Background technology
In the multi-wire saw process of monocrystalline, monocrystalline is bonding with resin streak by adhesive glue, then is fixed on by resin streak on equipment fixture, and fixture moves under driving single crystal direction, is cut it by the gauze run up.For ensureing that monocrystalline cutting process can not drop, need to increase resin streak width, but when gauze is cut to adhesive glue position, because cutting material is different, cut state will change, and causes comparatively serious cutting strain line, causes product fraction defective to increase.By reducing the method for resin streak width, can effectively reduce the generation of cutting strain line in this, but such design can make the silicon chip at monocrystalline two ends under the impact of high-speed steel and cutting mortar, occur the situation of sliver.
Summary of the invention
The problem that the invention will solve is to provide a kind of silicon chip cutting resin streak structure that enough can prevent silicon chip cutting stria.
For solving the problems of the technologies described above, the technical scheme that the invention adopts is: a kind of silicon chip cutting resin streak structure, comprise upper transverse part resin streak, inferior transverse part resin streak and vertical part resin streak, described upper transverse part resin streak is identical with inferior transverse part resin streak structure, the upper surface of described upper transverse part resin streak, inferior transverse part resin streak and vertical part resin streak is equipped with arc-shaped recess, and described upper transverse part resin streak, vertical part resin streak and inferior transverse part resin streak connect into " work " type structure in turn.
Preferably, described upper transverse part resin streak, vertical part resin streak and inferior transverse part resin streak are one-body molded.
Preferably, set by the upper surface of described upper transverse part resin streak, inferior transverse part resin streak and vertical part resin streak, the radian of arc-shaped recess is identical.
Preferably, the length of described upper transverse part resin streak and inferior transverse part resin streak is 5-10mm.
Preferably, the width of described vertical part resin streak is the 20%-60% of described upper transverse part resin streak and inferior transverse part resin streak width.
The advantage that the invention has and good effect are: upper transverse part resin streak and inferior transverse part resin streak are that wider resin streak can the silicon chip at available protecting monocrystalline two ends, avoid the situation of sliver; The vertical part resin streak connecting upper transverse part resin streak and inferior transverse part resin streak is narrower resin streak, can reduce the change of the cut state caused due to adhesive glue and resin streak; The invention can both avoid the generation caused because resin streak is wide seriously to cut the problem of strain line, can eliminate again the situation of the monocrystalline two ends sliver caused because resin streak is narrow.
Accompanying drawing explanation
Fig. 1 is the invention use principle schematic diagram;
Fig. 2 is the invention structure schematic top plan view;
Fig. 3 is the schematic side view of Fig. 2;
In figure: 1-resin streak, 11-upper transverse part resin streak, 12-vertical part resin streak, 13-inferior transverse part resin streak, 2-adhesive glue, 3-fixture, 4-monocrystalline, 5-cuts gauze.
Detailed description of the invention
Elaborate below in conjunction with the specific embodiment of accompanying drawing to the invention.
Resin streak structure is used in a kind of silicon chip cutting, comprise upper transverse part resin streak 11, inferior transverse part resin streak 13 and 12 vertical part resin streak, described upper transverse part resin streak 11 is identical with inferior transverse part resin streak 13 structure, the upper surface of described upper transverse part resin streak 11, inferior transverse part resin streak 13 and vertical part resin streak 12 is equipped with arc-shaped recess, and set by the upper surface of described upper transverse part resin streak 11, inferior transverse part resin streak 13 and vertical part resin streak 12, the radian of arc-shaped recess is identical.Described upper transverse part resin streak 11, vertical part resin streak 12 and inferior transverse part resin streak 13 connect into " work " type structure in turn, and described upper transverse part resin streak 11, vertical part resin streak 12 and inferior transverse part resin streak 13 are one-body molded.The length of described upper transverse part resin streak and inferior transverse part resin streak is 5-10mm, preferred 7-8mm.The width of described vertical part resin streak is the 20%-60% of described upper transverse part resin streak and inferior transverse part resin streak width, preferred 30%-50%.
The use of the invention is in the multi-wire saw process of monocrystalline 4, and monocrystalline 4 is bonding with resin streak 1 by adhesive glue 2, then is fixed on equipment fixture 3 by resin streak 1, is cut it by the movement of the cutting gauze 5 run up.For ensureing that monocrystalline 4 cutting process can not drop, need to increase resin streak 1 width, but when cutting gauze 5 and moving to adhesive glue 2 position, because cutting material is different, cut state will change, and causes comparatively serious cutting strain line, causes product fraction defective to increase.
It is upper not enough that the invention adopts the resin streak 1 of " I shape " structure to effectively prevent the design of primary resin bar, and upper transverse part resin streak 11 and inferior transverse part resin streak 13 are that wider resin streak can the silicon chip at available protecting monocrystalline two ends, avoid the situation of sliver; The vertical part resin streak 12 connecting upper transverse part resin streak 11 and inferior transverse part resin streak 13 is narrower resin streak, can reduce the change of the cut state caused due to adhesive glue 2 and resin streak 1; The invention can both avoid the generation caused because resin streak 1 is wide seriously to cut the problem of strain line, can eliminate again the situation of the monocrystalline 4 two ends sliver caused because resin streak 1 is narrow.
Above an embodiment of the invention has been described in detail, but described content being only the preferred embodiment of the invention, the practical range for limiting the invention can not being considered to.All equalization changes done according to the invention application range with improve, within the patent covering scope that still all should belong to the invention.
Claims (5)
1. resin streak structure is used in a silicon chip cutting, it is characterized in that: comprise upper transverse part resin streak, inferior transverse part resin streak and vertical part resin streak, described upper transverse part resin streak is identical with inferior transverse part resin streak structure, the upper surface of described upper transverse part resin streak, inferior transverse part resin streak and vertical part resin streak is equipped with arc-shaped recess, and described upper transverse part resin streak, vertical part resin streak and inferior transverse part resin streak connect into " work " type structure in turn.
2. a kind of silicon chip cutting resin streak structure according to claim 1, is characterized in that: described upper transverse part resin streak, vertical part resin streak and inferior transverse part resin streak are one-body molded.
3. a kind of silicon chip cutting resin streak structure according to claim 1, is characterized in that: set by the upper surface of described upper transverse part resin streak, inferior transverse part resin streak and vertical part resin streak, the radian of arc-shaped recess is identical.
4. a kind of silicon chip cutting resin streak structure according to any one of claim 1-3, is characterized in that: the length of described upper transverse part resin streak and inferior transverse part resin streak is 5-10mm.
5. a kind of silicon chip cutting resin streak structure according to any one of claim 1-3, is characterized in that: the width of described vertical part resin streak is the 20%-60% of described upper transverse part resin streak and inferior transverse part resin streak width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420690158.1U CN204340014U (en) | 2014-11-17 | 2014-11-17 | Resin streak structure is used in a kind of silicon chip cutting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420690158.1U CN204340014U (en) | 2014-11-17 | 2014-11-17 | Resin streak structure is used in a kind of silicon chip cutting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204340014U true CN204340014U (en) | 2015-05-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420690158.1U Active CN204340014U (en) | 2014-11-17 | 2014-11-17 | Resin streak structure is used in a kind of silicon chip cutting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204340014U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104309018A (en) * | 2014-11-17 | 2015-01-28 | 天津市环欧半导体材料技术有限公司 | Resin streak structure for cutting silicon slices |
-
2014
- 2014-11-17 CN CN201420690158.1U patent/CN204340014U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104309018A (en) * | 2014-11-17 | 2015-01-28 | 天津市环欧半导体材料技术有限公司 | Resin streak structure for cutting silicon slices |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181107 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191231 Address after: Dongyi Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 214203 Dongfeng Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: Dongyi Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address |