CN204333016U - LED silk - Google Patents
LED silk Download PDFInfo
- Publication number
- CN204333016U CN204333016U CN201420611248.7U CN201420611248U CN204333016U CN 204333016 U CN204333016 U CN 204333016U CN 201420611248 U CN201420611248 U CN 201420611248U CN 204333016 U CN204333016 U CN 204333016U
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- CN
- China
- Prior art keywords
- fluorescent
- adhesive layer
- wafer
- fluorescent adhesive
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- Led Device Packages (AREA)
Abstract
A kind of LED silk, comprise transparency carrier and be arranged at the LED wafer on transparency carrier, described LED wafer is electrically connected by plain conductor and forms path, the one side of described substrate die bond is formed with fluorescent adhesive layer by the mode of physics or chemistry, described LED wafer to be fixedly arranged on fluorescent adhesive layer and to be positioned at fluorescent adhesive layer scope completely, described wafer is formed with fluorescent glue coating layer by some glue or press moulding mode, the complete coated described LED wafer of described fluorescent glue coating layer and wire, the fluorescent adhesive layer that the utility model LED silk is shaping on the die bond face of transparency carrier is installed with wafer, described fluorescent glue coating layer is formed again at wafer upper point glue or mold pressing, fluorescent material can be reduced, glue consumption, reduce Material Cost, and filament side is without the blue phenomenon of leakage.
Description
Technical field
The utility model relates to LED, particularly relates to the LED silk of 360 ° of full angle luminescences.
Background technology
LED silk can realize 360 ° of full angle luminescences, and without the need to installing the optics of lens and so on additional, can be applicable to the illuminating products such as crystal pendant lamp, candle lamp, bulb lamp, wall lamp, brings unprecedented lighting experience.
The existing LED silk product be made up of the transparency carrier such as sapphire, glass, luminous in order to realize all-round light, the surrounding mold pressing fluorescent glue at transparency carrier filament or the front and back at transparency carrier filament is needed to carry out two-sided glue, but mold pressing fluorescent glue or substrate two-sided some fluorescent glue mode, processing procedure is loaded down with trivial details, material amounts is large, and cost is high, and the filament device side of substrate two-sided glue easily occurs leaking blue phenomenon.
Summary of the invention
In view of this, provide a kind of fluorescent glue consumption few and effectively can avoid Lou blue LED silk.
A kind of LED silk, comprise transparency carrier and be arranged at the LED wafer on transparency carrier, described LED wafer is electrically connected by plain conductor and forms path, the one side of described substrate die bond is formed with fluorescent adhesive layer by the mode of physics or chemistry, described LED wafer to be fixedly arranged on fluorescent adhesive layer and to be positioned at fluorescent adhesive layer scope completely, described wafer is formed with fluorescent glue coating layer, the complete coated described LED wafer of described fluorescent glue coating layer and wire by some glue or mold pressing.
Further, described substrate is sapphire, high polymer, pottery or glass, and the thickness of described fluorescent adhesive layer is more than 0.03mm.
Further, the area of described fluorescent adhesive layer is less than or equal to the area of the one side of substrate die bond, and described fluorescent adhesive layer exceeds or do not exceed the scope of fluorescent glue coating layer.
Compared to prior art, the fluorescent adhesive layer that the utility model LED silk is shaping on the die bond face of transparency carrier is installed with wafer, then forms described fluorescent glue coating layer at wafer upper point glue or mold pressing, fluorescent material, glue consumption can be reduced, reduce Material Cost; And filament side is without the blue phenomenon of leakage.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model LED silk.
Fig. 2 is another angular views of the utility model LED silk.
Fig. 3 is the cutaway view of the utility model LED silk along the III-III line of Fig. 1.
Embodiment
Below with reference to the drawings and the specific embodiments, the utility model is described in detail.
As shown in Figure 1, Figure 2 and shown in Fig. 3, the utility model LED silk comprises substrate 10, fluorescent adhesive layer 20, LED wafer 30, wire 40 and fluorescent glue coating layer 50.
Described substrate 10 can be the transparency carrier that sapphire, high polymer, pottery or glass etc. are made, described substrate 10 forms described fluorescent adhesive layer 20 by the mode such as physics, chemistry in the one side of die bond, described fluorescent adhesive layer 20 is the mixture of silica gel, epoxy resin or other stickums and fluorescent material, thickness is more than 0.03mm, its area can be equal to or less than the area of the one side of substrate 10 die bond, thus with the one side of all or part of covered substrate 10 die bond.In the present embodiment, the area of described fluorescent adhesive layer 20 is slightly less than the area of the one side of the die bond of substrate 10, and the edge of substrate 10 is not covered by fluorescent adhesive layer 20.
Described LED wafer 30 is fixedly arranged on fluorescent adhesive layer 20, the size of wafer 30 is not more than the size of fluorescent adhesive layer 20, wafer 30 to be positioned at completely on fluorescent adhesive layer 20 and not to exceed the scope of fluorescent adhesive layer 20, described wafer 30 can be single or multiple, LED path is connected to form by described wire 40, described wire 40 is the plain conductor 40 of conduction, as gold thread etc.After described LED wafer 30 is fixedly arranged in fluorescent adhesive layer 20, described fluorescent glue coating layer 50 is formed at wafer 30 upper point glue or mold pressing, described fluorescent adhesive layer 20 can exceed or not exceed the scope of fluorescent glue coating layer 50, in the present embodiment, not by the part that fluorescent adhesive layer 20 covers on the side of the die bond of the complete coated described LED wafer 30 of described fluorescent glue coating layer 50, wire 40 and substrate 10, thus make the utility model LED silk device.Fluorescent glue coating layer 50 on described wafer 30 can be identical with fluorescent adhesive layer 20 component bottom wafer 30, also can be different.
The utility model is that fluorescent adhesive layer 20 shaping on transparency carrier 10 die bond face is installed with wafer 30, then forms described fluorescent glue coating layer 50 at wafer 30 upper point glue or mold pressing, can reduce fluorescent material, glue consumption, reduce Material Cost; And filament side is without the blue phenomenon of leakage.It should be noted that; the utility model is not limited to above-mentioned execution mode; according to creative spirit of the present utility model; those skilled in the art can also make other changes; these changes done according to creative spirit of the present utility model, all should be included within the utility model scope required for protection.
Claims (3)
1. a LED silk, comprise transparency carrier and be arranged at the LED wafer on transparency carrier, described LED wafer is electrically connected by plain conductor and forms path, it is characterized in that: the one side of described substrate die bond is formed with fluorescent adhesive layer by the mode of physics or chemistry, described LED wafer to be fixedly arranged on fluorescent adhesive layer and to be positioned at fluorescent adhesive layer scope completely, described wafer is formed with fluorescent glue coating layer, the complete coated described LED wafer of described fluorescent glue coating layer and wire by some glue or mold pressing.
2. LED silk as claimed in claim 1, it is characterized in that, described substrate is sapphire, high polymer, pottery or glass, and the thickness of described fluorescent adhesive layer is more than 0.03mm.
3. LED silk as claimed in claim 1, it is characterized in that, the area of described fluorescent adhesive layer is less than or equal to the area of the one side of substrate die bond, and described fluorescent adhesive layer exceeds or do not exceed the scope of fluorescent glue coating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420611248.7U CN204333016U (en) | 2014-10-21 | 2014-10-21 | LED silk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420611248.7U CN204333016U (en) | 2014-10-21 | 2014-10-21 | LED silk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204333016U true CN204333016U (en) | 2015-05-13 |
Family
ID=53169339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420611248.7U Active CN204333016U (en) | 2014-10-21 | 2014-10-21 | LED silk |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204333016U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104319342A (en) * | 2014-10-21 | 2015-01-28 | 深圳市瑞丰光电子股份有限公司 | Led filament |
-
2014
- 2014-10-21 CN CN201420611248.7U patent/CN204333016U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104319342A (en) * | 2014-10-21 | 2015-01-28 | 深圳市瑞丰光电子股份有限公司 | Led filament |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |