CN204324885U - A kind of graphene growth equipment - Google Patents
A kind of graphene growth equipment Download PDFInfo
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- CN204324885U CN204324885U CN201420440782.6U CN201420440782U CN204324885U CN 204324885 U CN204324885 U CN 204324885U CN 201420440782 U CN201420440782 U CN 201420440782U CN 204324885 U CN204324885 U CN 204324885U
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- deposition apparatus
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Abstract
The utility model discloses a kind of graphene growth equipment, comprise multiple vacuum valve, be successively set on feeding unit, primary heater unit, deposition apparatus and the heat sink between adjacent two vacuum valves, and growth substrate and transmission board; Described growth substrate is placed on the surface of transmission board; Described feeding unit, primary heater unit, deposition apparatus and heat sink transmit transmission board successively; Transporting mechanism in described feeding unit and heat sink all adopts travelling belt; Transporting mechanism in described primary heater unit and deposition apparatus all adopts high temperature resistant roller-way; Described feeding unit, primary heater unit, deposition apparatus and heat sink are equipped with inlet mouth and bleeding point.The utility model can realize continous way growing large-area Graphene, meets the demand of production large size product, shortens the growth cycle of Graphene, effectively enhances productivity.
Description
Technical field
The utility model relates to a kind of graphene growth equipment.
Background technology
Graphene (Graphene) a kind ofly forms with sp2 hybridized orbital the flat film that hexangle type is honeycomb lattice by carbon atom, is the New Two Dimensional material only having one deck carbon atom thickness.Because the chemical structure that Graphene is special makes it have very excellent character in mechanics, calorifics, optics, electricity etc., as having superpower electroconductibility, wide spectrum high-clarity, the physical strength of superelevation and good thermal conductivity etc.The physical properties of Graphene uniqueness determines its wide application prospect, such as, Graphene is widely used in optoelectronic device, may be used for making flexible transparent electrode etc., compared with the ito transparent electrode that the flexible transparent electrode utilizing Graphene to make is leading with existing market, transmittance is stronger, photoelectric transformation efficiency is higher, power consumption is lower, thermal conductivity is better; Graphene can also for the manufacture of nanoelectronic integrated device of future generation, and not only travelling speed is fast to manufacture the electron device obtained, and the existing device of energy consuming ratio significantly reduces; In addition, Graphene spacecraft manufacture and medical in play irreplaceable effect.
Successfully from graphite, isolate Graphene by experiment from Univ Manchester UK physicist An Deliehaimu and Constantine Nuo Woxiaoluofu in 2004 and confirm that it can after Individual existence, researchist discloses many methods preparing Graphene, as micromechanics stripping method, epitaxial growth method, chemical reduction method, chemical Vapor deposition process (CVD) etc.Wherein, micromechanics stripping method directly graphene platelet is cut down from larger crystal a kind of method preparing Graphene; Epitaxial growth method is the high-vapor-pressure utilizing silicon, under high temperature and UHV condition, Siliciumatom is volatilized, and remaining carbon atom forms Graphene by structural rearrangement in surface of SiC; Chemical reduction method is mixed with water by graphite oxide, clear without particulate material to solution by ultra-sonic oscillation, adds appropriate hydrazine reflux, produces black particle shape precipitation, filter, dry and obtain Graphene; CVD is using carbon compounds such as methane as carbon source, and the metallic growth matrix at nickel, copper etc. with molten carbon amounts forms Graphene by then carbon source pyrolytic decomposition being adopted the mode of forcing functions at matrix surface.The Graphene adopting CVD to prepare not only area is comparatively large, and has the controlled advantage of the number of plies, becomes one of main method preparing high-quality graphene gradually.
The continuous growth apparatus of the equipment of current growing graphene film mainly tube furnace and volume to volume, such as Chinese patent literature CN201210561249.0 discloses a kind of Large-scale graphene preparation technology, comprise the steps: 1) get rid of in vacuum chamber foreign gas after, in vacuum chamber, pass into catalytic gas; 2) one section corresponding with heating unit in graphene growth foil is heated to the graphene growth temperature set; 3) in vacuum chamber, pass into carbon-source gas, and the pressure controlled in vacuum chamber is the graphene growth pressure of setting; 4) drive between heating unit and graphene growth foil and produce relative movement, heating unit is along its direction of relative movement relative to graphene growth foil heated graphite alkene growth foil gradually, after the graphene growth of graphene growth foil completes and shifts out heating unit, utilize quickly cooling device that graphene growth foil is cooled to normal temperature.
There is following shortcoming in the equipment of current growing graphene film:
The main drawback of tube furnace is: 1) need after graphene growth to shift out heating unit, then move into refrigerating unit, can not complete continuously, growth cycle is longer, and efficiency is low; 2) by the impact of caliber, the Graphene area of growth is less, cannot meet the demand of large size product.
The main drawback of the continuous growth apparatus of volume to volume: 1) equipment is high to sealing requirements, equipment manufacturing cost is expensive; 2) Copper Foil mechanical property after pyroprocessing sharply declines, and can deform in curling process, causes surperficial graphene-structured also to be destroyed.
Utility model content
The purpose of this utility model is to provide that a kind of cost is low, growth cycle is short, production efficiency is high, can the equipment of continous way growing large-area Graphene.
The technical scheme realizing the utility model object is: a kind of graphene growth equipment, comprises multiple vacuum valve, is successively set on feeding unit, primary heater unit, deposition apparatus and heat sink between adjacent two vacuum valves, and growth substrate and transmission board; Described growth substrate is placed on the surface of transmission board; Described feeding unit, primary heater unit, deposition apparatus and heat sink transmit transmission board successively; Transporting mechanism in described feeding unit and heat sink all adopts travelling belt; Transporting mechanism in described primary heater unit and deposition apparatus all adopts high temperature resistant roller-way; Described feeding unit, primary heater unit, deposition apparatus and heat sink are equipped with inlet mouth and bleeding point.
Heater block is equipped with in described primary heater unit and deposition apparatus.
Lift heat exchange platform is provided with below travelling belt in described heat sink.
The top of described heat sink is also provided with sending out the hot fan.
The bottom of described feeding unit, primary heater unit, deposition apparatus and heat sink is equipped with supporting leg.
Sealed by high-temperature seal ring between described high temperature resistant roller-way and primary heater unit and deposition apparatus.
Have employed technique scheme, the utility model has following beneficial effect: (1) feeding unit of the present utility model, primary heater unit, deposition apparatus and heat sink set gradually, and connected by vacuum valve, this structure can realize continous way growing large-area Graphene, meet the demand of production large size product, shorten the growth cycle of Graphene, effectively enhance productivity.
(2) good seal performance of the present utility model, equipment manufacturing cost is low.
(3) growth substrate of the present utility model is placed on the surface of transmission board, and transmission board transmits in each apparatus body, and growth substrate does not affect by transmission in the process, and the Graphene quality therefore produced is high.
(4) surface arrangement of inlet pipe of the present utility model has multiple air inlet port, is conducive to Graphene deposition, can further improve graphene product quality.
(5) be provided with lift heat exchange platform below the travelling belt in heat sink of the present utility model, good cooling results, is conducive to fast cooling.
(6) top of heat sink of the present utility model arranges sending out the hot fan, can promote cooling-down effect further.
(7) bottom of feeding unit of the present utility model, primary heater unit, deposition apparatus and heat sink is equipped with supporting leg, and this structure makes the liftoff certain distance of each apparatus body, convenient operation.
(8) sealed by high-temperature seal ring between high temperature resistant roller-way of the present utility model and primary heater unit and deposition apparatus, this structure can further lift-off seal performance.
Accompanying drawing explanation
In order to make content of the present utility model more easily be clearly understood, below according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail, wherein
Fig. 1 is the structural representation preparing the equipment of Graphene of the present utility model.
Label in accompanying drawing is:
Feeding unit 1, primary heater unit 2, deposition apparatus 3, heat sink 4, vacuum valve 5, growth substrate 6, transmission board 7, travelling belt 8, high temperature resistant roller-way 9, inlet mouth 10, bleeding point 11, heater block 12, inlet pipe 13, sending out the hot fan 14, lift heat exchange platform 15, supporting leg 16, high-temperature seal ring 17.
Embodiment
(embodiment 1)
See Fig. 1, the equipment preparing Graphene of the present embodiment, comprise multiple vacuum valve 5, be successively set on feeding unit 1, primary heater unit 2, deposition apparatus 3 and the heat sink 4 between adjacent two vacuum valves 5, and growth substrate 6 and transmission board 7.
Growth substrate 6 is placed on the surface of transmission board 7.Feeding unit 1, primary heater unit 2, deposition apparatus 3 and heat sink 4 transmit transmission board 7 successively.The bottom of feeding unit 1, primary heater unit 2, deposition apparatus 3 and heat sink 4 is equipped with supporting leg 16.Transporting mechanism in feeding unit 1 and heat sink 4 all adopts travelling belt 8.Transporting mechanism in primary heater unit 2 and deposition apparatus 3 all adopts high temperature resistant roller-way 9.The transmission speed of travelling belt 8 and high temperature resistant roller-way 9 is 20mm ~ 200mm/min.Sealed by high-temperature seal ring 17 between high temperature resistant roller-way 9 and primary heater unit 2 and deposition apparatus 3.Feeding unit 1, primary heater unit 2, deposition apparatus 3 and heat sink 4 are equipped with inlet mouth 10 and bleeding point 11.Heater block 12 is equipped with in primary heater unit 2 and deposition apparatus 3.Inlet pipe 13 is provided with in deposition apparatus 3.Inlet pipe 13 one end open, the other end is closed.The opening end of inlet pipe 13 is connected with the inlet mouth 10 on deposition apparatus 3.Lift heat exchange platform 15 is provided with below travelling belt 8 in heat sink 4.The top of heat sink 4 is also provided with sending out the hot fan 14.The surface arrangement of inlet pipe 13 has multiple air inlet port.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any amendment made, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (7)
1. a graphene growth equipment, it is characterized in that: comprise multiple vacuum valve (5), be successively set on feeding unit (1), primary heater unit (2), deposition apparatus (3) and the heat sink (4) between adjacent two vacuum valves (5), and growth substrate (6) and transmission board (7); Described growth substrate (6) is placed on the surface of transmission board (7); Described feeding unit (1), primary heater unit (2), deposition apparatus (3) and heat sink (4) transmit transmission board (7) successively; Transporting mechanism in described feeding unit (1) and heat sink (4) all adopts travelling belt (8); Transporting mechanism in described primary heater unit (2) and deposition apparatus (3) all adopts high temperature resistant roller-way (9); Described feeding unit (1), primary heater unit (2), deposition apparatus (3) and heat sink (4) are equipped with inlet mouth (10) and bleeding point (11).
2. a kind of graphene growth equipment according to claim 1, is characterized in that: be equipped with heater block (12) in described primary heater unit (2) and deposition apparatus (3).
3. a kind of graphene growth equipment according to claim 1, is characterized in that: be provided with inlet pipe (13) in described deposition apparatus (3); Described inlet pipe (13) one end open, the other end is closed; The opening end of described inlet pipe (13) is connected with the inlet mouth (10) on deposition apparatus (3); The surface arrangement of described inlet pipe (13) has multiple air inlet port.
4. a kind of graphene growth equipment according to claim 1, is characterized in that: travelling belt (8) below in described heat sink (4) is provided with lift heat exchange platform (15).
5. a kind of graphene growth equipment according to claim 4, is characterized in that: the top of described heat sink (4) is also provided with sending out the hot fan (14).
6. a kind of graphene growth equipment according to claim 1, is characterized in that: the bottom of described feeding unit (1), primary heater unit (2), deposition apparatus (3) and heat sink (4) is equipped with supporting leg (16).
7. a kind of graphene growth equipment according to claim 1, is characterized in that: sealed by high-temperature seal ring (17) between described high temperature resistant roller-way (9) and primary heater unit (2) and deposition apparatus (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420440782.6U CN204324885U (en) | 2014-08-05 | 2014-08-05 | A kind of graphene growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420440782.6U CN204324885U (en) | 2014-08-05 | 2014-08-05 | A kind of graphene growth equipment |
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| CN204324885U true CN204324885U (en) | 2015-05-13 |
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| CN201420440782.6U Active CN204324885U (en) | 2014-08-05 | 2014-08-05 | A kind of graphene growth equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105314625A (en) * | 2014-08-05 | 2016-02-10 | 常州二维碳素科技股份有限公司 | Graphene growth equipment and method for preparing graphene by graphene growth equipment |
| CN106430158A (en) * | 2016-08-31 | 2017-02-22 | 无锡东恒新能源科技有限公司 | Graphene growing and preparing device |
-
2014
- 2014-08-05 CN CN201420440782.6U patent/CN204324885U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105314625A (en) * | 2014-08-05 | 2016-02-10 | 常州二维碳素科技股份有限公司 | Graphene growth equipment and method for preparing graphene by graphene growth equipment |
| CN105314625B (en) * | 2014-08-05 | 2018-05-25 | 常州二维碳素科技股份有限公司 | A kind of graphene growth equipment and its method for preparing graphene |
| CN106430158A (en) * | 2016-08-31 | 2017-02-22 | 无锡东恒新能源科技有限公司 | Graphene growing and preparing device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: CHANGZHOU 2D CARBON TECHNOLOGY CO., LTD. Free format text: FORMER NAME: 2D CARBON (CHANGZHOU) TECHNOLOGY CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: 213000 No. 6 Xiangyun Road, Wujin Economic Development Zone, Jiangsu, Changzhou Patentee after: 2D CARBON (CHANGZHOU) TECH INC., LTD. Address before: 213000 No. 6 Xiangyun Road, Wujin Economic Development Zone, Jiangsu, Changzhou Patentee before: 2D Carbon (Changzhou) Tech Co., Ltd. |