CN204316335U - A kind of pulse width modulated power supply of beam excitation of logic-based protection emitter-base bandgap grading manifold type - Google Patents
A kind of pulse width modulated power supply of beam excitation of logic-based protection emitter-base bandgap grading manifold type Download PDFInfo
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- CN204316335U CN204316335U CN201420740143.1U CN201420740143U CN204316335U CN 204316335 U CN204316335 U CN 204316335U CN 201420740143 U CN201420740143 U CN 201420740143U CN 204316335 U CN204316335 U CN 204316335U
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Abstract
The utility model discloses the pulse width modulated power supply of beam excitation of a kind of logic-based protection emitter-base bandgap grading manifold type, primarily of diode rectifier U, power amplifier P1, transformer T, be serially connected in the switched filter circuit between diode rectifier U and power amplifier P1, the power output circuit be connected with the secondary coil L2 of transformer T, the transformation feedback circuit be connected with the secondary coil L3 of transformer T, the compositions such as the ON-OFF control circuit be connected with transformation feedback circuit, it is characterized in that, virtual protection emitter-base bandgap grading manifold type amplifying circuit is also serially connected with between slope equalizer W and current comparator I2.The utility model initiative slope equalizer and voltage, current comparator are used in a power, not only effectively reduce circuit self and external radio frequency interference, but also greatly simplify circuit structure, cost of manufacture and maintenance cost are had reduction by a relatively large margin.
Description
Technical field
The utility model relates to a kind of switching power supply, specifically refers to the pulse width modulated power supply of beam excitation of a kind of logic-based protection emitter-base bandgap grading manifold type.
Background technology
Along with continuous progress scientific and technological at present, electronic product also brings great convenience to people are in life while function from strength to strength.Voltage stabilizing circuit is just runed and gives birth to, and traditional series connection linear regulator type voltage stabilizing circuit has the features such as stability is high, output voltage is adjustable, ripple coefficient is little, circuit is simple.But the Correctional tube of these series connection linear regulator type voltage stabilizing circuits is always operating at magnifying state, and have electric current to flow through, therefore the power consumption of its pipe is comparatively large, the efficiency of circuit is not high, generally can only reach about 30% ~ 50% always.In order to overcome above-mentioned defect, people just have developed switching mode voltage stabilizing circuit.
In switching mode voltage stabilizing circuit, surge pipe is operated on off state, pipe alternation saturated with cut-off two states in.When pipe saturation conduction, though it is large to flow through pipe current, but tube voltage drop is very little; When pipe ends, tube voltage drop is large, but the electric current flow through is close to zero.Therefore, under power output the same terms, the efficiency of switching mode voltage stabilizer coin series regulator is high, generally can reach about 80% ~ 90%.But it is comparatively large that the switching mode voltage stabilizer that current people adopt but exists ripple coefficient, when Correctional tube constantly switches between saturated and cut-off state, radio frequency interference can be produced to circuit, circuit more complicated and cost is higher.
Utility model content
The purpose of this utility model is the defect that ripple coefficient is comparatively large, radio frequency interference is serious, circuit is complicated and efficiency is not high overcoming the existence of current switching mode voltage stabilizer, provides a kind of logic-based to protect the pulse width modulated power supply of beam excitation of emitter-base bandgap grading manifold type.
The purpose of this utility model is achieved through the following technical solutions: a kind of pulse width modulated power supply of beam excitation of logic-based protection emitter-base bandgap grading manifold type, primarily of diode rectifier U, power amplifier P1, transformer T, be serially connected in the switched filter circuit between diode rectifier U and power amplifier P1, the power output circuit be connected with the secondary coil L2 of transformer T, the transformation feedback circuit be connected with the secondary coil L3 of transformer T, the ON-OFF control circuit be connected with transformation feedback circuit, the oscillator be connected with ON-OFF control circuit, the current comparator I1 be connected with ON-OFF control circuit, the current comparator I2 be connected with ON-OFF control circuit, the slope equalizer W be connected with current comparator I1 with oscillator, respectively with power amplifier P1, the beam excitation formula logic amplifying circuit that current comparator I1 and diode rectifier U is connected, and output is connected with the tap on the primary coil L1 of transformer T, and the sliding damper that input is connected with the output of power amplifier P1 forms.
Meanwhile, between slope equalizer W and current comparator I2, be also serially connected with virtual protection emitter-base bandgap grading manifold type amplifying circuit, described virtual protection emitter-base bandgap grading manifold type amplifying circuit is primarily of triode Q2, triode Q3, power amplifier P4, power amplifier P5, be serially connected in the resistance R10 between the end of oppisite phase of power amplifier P4 and output, be serially connected in the polar capacitor C11 between the in-phase end of power amplifier P5 and output, be serially connected in the resistance R9 between the in-phase end of power amplifier P4 and the collector electrode of triode Q2, be serially connected in the resistance R11 between the collector electrode of triode Q2 and the base stage of triode Q3, the electric capacity C10 be in parallel with resistance R11, negative pole is connected with the in-phase end of power amplifier P4, the polar capacitor C9 that positive pole is connected with the emitter of triode Q2 after resistance R12, be serially connected in the resistance R13 between the base stage of triode Q3 and the positive pole of polar capacitor C9, positive pole is connected with the emitter of triode Q3, negative pole is in turn through electric capacity C12 that voltage stabilizing didoe D6 is connected with the output of power amplifier P4 after resistance R14, P pole is connected with the output of power amplifier P5, the diode D7 that N pole is connected with the tie point of resistance R14 with voltage stabilizing didoe D6 after resistance R15 through resistance R16, and P pole is connected with the negative pole of electric capacity C12, the voltage stabilizing didoe D8 that N pole is connected with the tie point of resistance R16 with diode D7 forms, the base stage of described triode Q2 is connected with the positive pole of polar capacitor C9, and its emitter is connected with the emitter of triode Q3, and its collector electrode is connected with the end of oppisite phase of power amplifier P4, the collector electrode of triode Q3 is connected with the end of oppisite phase of power amplifier P5, and the in-phase end of power amplifier P5 is connected with the output of power amplifier P4, the positive pole of described polar capacitor C9 is then connected with the negative input of current comparator I1 after slope equalizer W, and resistance R16 is then connected with the output of current comparator I2 with the tie point of resistance R15.
Described beam excitation formula logic amplifying circuit is primarily of power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the in-phase end of power amplifier P3, the polar capacitor C6 of positive pole ground connection after optical diode D4, one end is connected with the positive pole of polar capacitor C6, the resistance R4 of other end ground connection after diode D5, positive pole is connected with the tie point of diode D5 with resistance R4, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R5 that the other end is connected with the in-phase end of power amplifier P3, be serially connected in the resistance R6 between the end of oppisite phase of power amplifier P3 and output, one end is connected with the output of NAND gate IC1, the resistance R7 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C8 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R8 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the end of oppisite phase of power amplifier P3, and its output is connected with the electrode input end of NAND gate IC2, and the electrode input end of NAND gate IC3 is connected with the output of power amplifier P3, the output of described NAND gate IC3 is then connected with current comparator I1 with power amplifier P1 respectively, and the in-phase end of power amplifier P3 is connected with the cathode output end of diode rectifier U.
Described switched filter circuit is by triode Q1, and electric capacity C1, electric capacity C2, resistance R1, resistance R2 and diode D1 form; The base stage of described triode Q1 forms loop with its collector electrode in turn after resistance R2, diode D1 and resistance R1, and electric capacity C1 and resistance R1 is in parallel, and electric capacity C2 and resistance R2 is in parallel; The collector electrode of triode Q1 is connected with the cathode output end of diode rectifier U, its grounded emitter; The cathode output end of diode rectifier U is then directly connected with the end of oppisite phase of power amplifier P1, and resistance R2 is then connected with the in-phase end of power amplifier P1 with the tie point of diode D1; The primary coil L1 of transformer T is then in parallel with diode D1.
The diode D2 that described power output circuit is connected with the Same Name of Ends of secondary coil L2 by P pole, N pole is connected with the non-same polarity of secondary coil L2 after electric capacity C3, and the inductance L 4 that one end is connected with the N pole of diode D2, the other end is connected with the non-same polarity of secondary coil L2 after electric capacity C4 forms.
Described transformation feedback circuit is made up of diode D3 and electric capacity C5; The P pole of described diode D3 is connected with the non-same polarity of secondary coil L3, its N pole is connected with the Same Name of Ends of secondary coil L3 after electric capacity C5, the Same Name of Ends ground connection of described secondary coil L3.
Described ON-OFF control circuit is made up of field effect transistor MOS, power amplifier P2, voltage comparator U1, inductance L 5 and resistance R3; Described inductance L 5 is serially connected between the output of power amplifier P1 and the N pole of diode D3, and the drain electrode of field effect transistor MOS is connected with the N pole of diode D3, its source electrode ground connection, its grid after resistance R3 are then connected with the output of power amplifier P2; The S end of voltage comparator U1 is connected with the output of oscillator, and its R end is connected with the output of current comparator I1, and its Q end is then connected with the end of oppisite phase of power amplifier P2; The in-phase end of power amplifier P2 is then connected with the drain electrode of field effect transistor MOS; The electrode input end of current comparator I2 is then connected with the two ends of resistance R3 with negative input, and its output is connected with the tie point of resistance R15 with resistance R16; The electrode input end of current comparator I1 is then connected with the output of power amplifier P1; The output of described NAND gate IC3 is then connected with the negative input of current comparator I1 with the end of oppisite phase of power amplifier P1 respectively.
The utility model comparatively prior art is compared, and has the following advantages and beneficial effect:
(1) the utility model initiative beam excitation formula logic amplifying circuit is applied to, in pulse width modulated power supply, therefore can guarantee the output quality of power supply.
(2) the utility model initiative slope equalizer and voltage, current comparator are used in a power, not only effectively reduce circuit self and external radio frequency interference, but also greatly simplify circuit structure, cost of manufacture and maintenance cost are had reduction by a relatively large margin.
(3) the utility model utilizes field effect transistor to form ON-OFF control circuit, the utility model is not only made to have possessed boost mode and decompression mode, but also making the change of full voltage range output current control between ± 0.1%, the output current change control range of more traditional switching power supply is greatly improved.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present utility model.
Fig. 2 is virtual protection emitter-base bandgap grading manifold type amplification circuit structure schematic diagram of the present utility model.
Embodiment
Below in conjunction with embodiment, the utility model is described in further detail, but execution mode of the present utility model is not limited thereto.
Embodiment
As shown in Figure 1, the utility model includes diode rectifier U, power amplifier P1, transformer T, switched filter circuit, power output circuit, transformation feedback circuit, ON-OFF control circuit, oscillator, current comparator I1, current comparator I2, slope equalizer W, sliding damper, beam excitation formula logic amplifying circuit and virtual protection emitter-base bandgap grading manifold type amplifying circuit.Wherein, transformer T is by the primary coil L1 being arranged on its former limit, and the secondary coil L2 and the secondary coil L3 that are arranged on its secondary form.The utility model is provided with a sliding tap on the primary coil L1 of transformer T, this sliding tap is then controlled by sliding damper, to guarantee to adjust turn ratio between the primary coil L1 of transformer T and secondary coil L2 and secondary coil L3 according to the Output rusults of ON-OFF control circuit, thus realize the output of different voltage.
As described in Figure 1, this beam excitation formula logic amplifying circuit is primarily of power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the in-phase end of power amplifier P3, the polar capacitor C6 of positive pole ground connection after optical diode D4, one end is connected with the positive pole of polar capacitor C6, the resistance R4 of other end ground connection after diode D5, positive pole is connected with the tie point of diode D5 with resistance R4, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R5 that the other end is connected with the in-phase end of power amplifier P3, be serially connected in the resistance R6 between the end of oppisite phase of power amplifier P3 and output, one end is connected with the output of NAND gate IC1, the resistance R7 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C8 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R8 that the other end is connected with the negative input of NAND gate IC2 forms.
During connection, the electrode input end of described NAND gate IC1 is connected with the end of oppisite phase of power amplifier P3, and its output is connected with the electrode input end of NAND gate IC2, and the electrode input end of NAND gate IC3 is connected with the output of power amplifier P3; The output of described NAND gate IC3 is then connected with current comparator I1 with power amplifier P1 respectively, and the in-phase end of power amplifier P3 is connected with the cathode output end of diode rectifier U.
The input of diode rectifier U is used for the civil power of external 220V, between the cathode output end that switched filter circuit is then serially connected in this diode rectifier U and the in-phase end of power amplifier P1.As shown in Figure 1, this switched filter circuit is by triode Q1, and electric capacity C1, electric capacity C2, resistance R1, resistance R2 and diode D1 form.Wherein, the base stage of triode Q1 forms loop with its collector electrode in turn after resistance R2, diode D1 and resistance R1.Electric capacity C1 and resistance R1 is in parallel, and electric capacity C2 and resistance R2 is in parallel, to form typical RC filter circuit.Meanwhile, the collector electrode of triode Q1 is connected with the cathode output end of diode rectifier U, its grounded emitter; The cathode output end of diode rectifier U is then directly connected with the end of oppisite phase of power amplifier P1, and resistance R2 is then connected with the in-phase end of power amplifier P1 with the tie point of diode D1.Primary coil L1 and the diode D1 of described transformer T are in parallel.
In this switched filter circuit, resistance R1, electric capacity C1 and diode D1 form feedback-clamp circuit, can improve the peak-inverse voltage of conversion efficiency and reduction power amplifier P1 in-phase end.
Power output circuit is used for the direct voltage of stable output, and it is made up of diode D2, electric capacity C3, inductance L 4 and electric capacity C4.During connection, the P pole of diode D2 is connected with the Same Name of Ends of secondary coil L2, and its N pole is connected with the non-same polarity of secondary coil L2 after electric capacity C3.One end of described inductance L 4 is connected with the N pole of diode D2, the other end is connected with the non-same polarity of secondary coil L2 after electric capacity C4.The two ends of electric capacity C4 then as the output of whole power supply, for external loading provides required voltage and current.
Transformation feedback circuit is used for providing feedback operation voltage, to guarantee that ON-OFF control circuit can control sliding damper according to feedback voltage for ON-OFF control circuit.This transformation feedback circuit is then made up of diode D3 and electric capacity C5.During connection, the P pole of described diode D3 is connected with the non-same polarity of secondary coil L3, its N pole is connected with the Same Name of Ends of secondary coil L3 after electric capacity C5, meanwhile, and the Same Name of Ends ground connection of this secondary coil L3.
ON-OFF control circuit is switching control section of the present utility model, and it is made up of field effect transistor MOS, power amplifier P2, voltage comparator U1, inductance L 5 and resistance R3.As shown in Figure 1, this inductance L 5 is serially connected between the output of power amplifier P1 and the N pole of diode D3, and the drain electrode of field effect transistor MOS is connected with the N pole of diode D3, its source electrode ground connection, its grid after resistance R3 are then connected with the output of power amplifier P2.
The S end of voltage comparator U1 is connected with the output of oscillator, and its R end is connected with the output of current comparator I1, and its Q end is then connected with the end of oppisite phase of power amplifier P2.The in-phase end of power amplifier P2 is then connected with the drain electrode of field effect transistor MOS.The electrode input end of current comparator I2 is connected with the two ends of negative input with resistance R3, and during to guarantee field effect transistor MOS conducting, it can collect operating voltage from resistance R3 two ends.
Simultaneously; the output of this current comparator I2 will be connected with the input of oscillator with the negative input of current comparator I1 respectively after virtual protection emitter-base bandgap grading manifold type amplifying circuit; to guarantee that slope equalizer W can provide auxiliary slope-compensation for current comparator I1, make its working stability.
The electrode input end of current comparator I1 is then connected with the non-same polarity of primary coil L1 with the output of power amplifier P1.Meanwhile, the output of described NAND gate IC3 is also connected with the negative input of current comparator I1 with the end of oppisite phase of power amplifier P1 respectively.
The structure of described virtual protection emitter-base bandgap grading manifold type amplifying circuit as shown in Figure 2, it is by triode Q2, triode Q3, power amplifier P4, power amplifier P5, be serially connected in the resistance R10 between the end of oppisite phase of power amplifier P4 and output, be serially connected in the polar capacitor C11 between the in-phase end of power amplifier P5 and output, be serially connected in the resistance R9 between the in-phase end of power amplifier P4 and the collector electrode of triode Q2, be serially connected in the resistance R11 between the collector electrode of triode Q2 and the base stage of triode Q3, the electric capacity C10 be in parallel with resistance R11, negative pole is connected with the in-phase end of power amplifier P4, the polar capacitor C9 that positive pole is connected with the emitter of triode Q2 after resistance R12, be serially connected in the resistance R13 between the base stage of triode Q3 and the positive pole of polar capacitor C9, positive pole is connected with the emitter of triode Q3, negative pole is in turn through electric capacity C12 that voltage stabilizing didoe D6 is connected with the output of power amplifier P4 after resistance R14, P pole is connected with the output of power amplifier P5, the diode D7 that N pole is connected with the tie point of resistance R14 with voltage stabilizing didoe D6 after resistance R15 through resistance R16, and P pole is connected with the negative pole of electric capacity C12, the voltage stabilizing didoe D8 that N pole is connected with the tie point of resistance R16 with diode D7 forms.
Meanwhile, the base stage of described triode Q2 is connected with the positive pole of polar capacitor C9, and its emitter is connected with the emitter of triode Q3, and its collector electrode is connected with the end of oppisite phase of power amplifier P4; The collector electrode of triode Q3 is connected with the end of oppisite phase of power amplifier P5, and the in-phase end of power amplifier P5 is connected with the output of power amplifier P4.
During connection, the positive pole of described polar capacitor C9 is then connected with the negative input of current comparator I1 after slope equalizer W, and resistance R16 is then connected with the output of current comparator I2 with the tie point of resistance R15.
As mentioned above, just the utility model can well be realized.
Claims (6)
1. the pulse width modulated power supply of beam excitation of a logic-based protection emitter-base bandgap grading manifold type, primarily of diode rectifier U, power amplifier P1, transformer T, be serially connected in the switched filter circuit between diode rectifier U and power amplifier P1, the power output circuit be connected with the secondary coil L2 of transformer T, the transformation feedback circuit be connected with the secondary coil L3 of transformer T, the ON-OFF control circuit be connected with transformation feedback circuit, the oscillator be connected with ON-OFF control circuit, the current comparator I1 be connected with ON-OFF control circuit, the current comparator I2 be connected with ON-OFF control circuit, the slope equalizer W be connected with current comparator I1 with oscillator, respectively with power amplifier P1, the beam excitation formula logic amplifying circuit that current comparator I1 and diode rectifier U is connected, and output is connected with the tap on the primary coil L1 of transformer T, and the sliding damper that input is connected with the output of power amplifier P1 forms, it is characterized in that, virtual protection emitter-base bandgap grading manifold type amplifying circuit is also serially connected with between slope equalizer W and current comparator I2, described virtual protection emitter-base bandgap grading manifold type amplifying circuit is primarily of triode Q2, triode Q3, power amplifier P4, power amplifier P5, be serially connected in the resistance R10 between the end of oppisite phase of power amplifier P4 and output, be serially connected in the polar capacitor C11 between the in-phase end of power amplifier P5 and output, be serially connected in the resistance R9 between the in-phase end of power amplifier P4 and the collector electrode of triode Q2, be serially connected in the resistance R11 between the collector electrode of triode Q2 and the base stage of triode Q3, the electric capacity C10 be in parallel with resistance R11, negative pole is connected with the in-phase end of power amplifier P4, the polar capacitor C9 that positive pole is connected with the emitter of triode Q2 after resistance R12, be serially connected in the resistance R13 between the base stage of triode Q3 and the positive pole of polar capacitor C9, positive pole is connected with the emitter of triode Q3, negative pole is in turn through electric capacity C12 that voltage stabilizing didoe D6 is connected with the output of power amplifier P4 after resistance R14, P pole is connected with the output of power amplifier P5, the diode D7 that N pole is connected with the tie point of resistance R14 with voltage stabilizing didoe D6 after resistance R15 through resistance R16, and P pole is connected with the negative pole of electric capacity C12, the voltage stabilizing didoe D8 that N pole is connected with the tie point of resistance R16 with diode D7 forms, the base stage of described triode Q2 is connected with the positive pole of polar capacitor C9, and its emitter is connected with the emitter of triode Q3, and its collector electrode is connected with the end of oppisite phase of power amplifier P4, the collector electrode of triode Q3 is connected with the end of oppisite phase of power amplifier P5, and the in-phase end of power amplifier P5 is connected with the output of power amplifier P4, the positive pole of described polar capacitor C9 is then connected with the negative input of current comparator I1 after slope equalizer W, and resistance R16 is then connected with the output of current comparator I2 with the tie point of resistance R15.
2. the pulse width modulated power supply of beam excitation of a kind of logic-based protection emitter-base bandgap grading manifold type according to claim 1, it is characterized in that, described beam excitation formula logic amplifying circuit is primarily of power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the in-phase end of power amplifier P3, the polar capacitor C6 of positive pole ground connection after optical diode D4, one end is connected with the positive pole of polar capacitor C6, the resistance R4 of other end ground connection after diode D5, positive pole is connected with the tie point of diode D5 with resistance R4, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R5 that the other end is connected with the in-phase end of power amplifier P3, be serially connected in the resistance R6 between the end of oppisite phase of power amplifier P3 and output, one end is connected with the output of NAND gate IC1, the resistance R7 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C8 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R8 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the end of oppisite phase of power amplifier P3, and its output is connected with the electrode input end of NAND gate IC2, and the electrode input end of NAND gate IC3 is connected with the output of power amplifier P3, the output of described NAND gate IC3 is then connected with current comparator I1 with power amplifier P1 respectively, and the in-phase end of power amplifier P3 is connected with the cathode output end of diode rectifier U.
3. the pulse width modulated power supply of beam excitation of a kind of logic-based protection emitter-base bandgap grading manifold type according to claim 2, it is characterized in that, described switched filter circuit is by triode Q1, and electric capacity C1, electric capacity C2, resistance R1, resistance R2 and diode D1 form; The base stage of described triode Q1 forms loop with its collector electrode in turn after resistance R2, diode D1 and resistance R1, and electric capacity C1 and resistance R1 is in parallel, and electric capacity C2 and resistance R2 is in parallel; The collector electrode of triode Q1 is connected with the cathode output end of diode rectifier U, its grounded emitter; The cathode output end of diode rectifier U is then directly connected with the end of oppisite phase of power amplifier P1, and resistance R2 is then connected with the in-phase end of power amplifier P1 with the tie point of diode D1; The primary coil L1 of transformer T is then in parallel with diode D1.
4. the pulse width modulated power supply of beam excitation of a kind of logic-based protection emitter-base bandgap grading manifold type according to claim 3; it is characterized in that; the diode D2 that described power output circuit is connected with the Same Name of Ends of secondary coil L2 by P pole, N pole is connected with the non-same polarity of secondary coil L2 after electric capacity C3, and the inductance L 4 that one end is connected with the N pole of diode D2, the other end is connected with the non-same polarity of secondary coil L2 after electric capacity C4 forms.
5. the pulse width modulated power supply of beam excitation of a kind of logic-based protection emitter-base bandgap grading manifold type according to claim 4, it is characterized in that, described transformation feedback circuit is made up of diode D3 and electric capacity C5; The P pole of described diode D3 is connected with the non-same polarity of secondary coil L3, its N pole is connected with the Same Name of Ends of secondary coil L3 after electric capacity C5, the Same Name of Ends ground connection of described secondary coil L3.
6. the pulse width modulated power supply of beam excitation of a kind of logic-based protection emitter-base bandgap grading manifold type according to claim 5, it is characterized in that, described ON-OFF control circuit is made up of field effect transistor MOS, power amplifier P2, voltage comparator U1, inductance L 5 and resistance R3; Described inductance L 5 is serially connected between the output of power amplifier P1 and the N pole of diode D3, and the drain electrode of field effect transistor MOS is connected with the N pole of diode D3, its source electrode ground connection, its grid after resistance R3 are then connected with the output of power amplifier P2; The S end of voltage comparator U1 is connected with the output of oscillator, and its R end is connected with the output of current comparator I1, and its Q end is then connected with the end of oppisite phase of power amplifier P2; The in-phase end of power amplifier P2 is then connected with the drain electrode of field effect transistor MOS; The electrode input end of current comparator I2 is then connected with the two ends of resistance R3 with negative input, and its output is connected with the tie point of resistance R15 with resistance R16; The electrode input end of current comparator I1 is then connected with the output of power amplifier P1; The output of described NAND gate IC3 is then connected with the negative input of current comparator I1 with the end of oppisite phase of power amplifier P1 respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420740143.1U CN204316335U (en) | 2014-11-28 | 2014-11-28 | A kind of pulse width modulated power supply of beam excitation of logic-based protection emitter-base bandgap grading manifold type |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420740143.1U CN204316335U (en) | 2014-11-28 | 2014-11-28 | A kind of pulse width modulated power supply of beam excitation of logic-based protection emitter-base bandgap grading manifold type |
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| CN204316335U true CN204316335U (en) | 2015-05-06 |
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| CN201420740143.1U Expired - Fee Related CN204316335U (en) | 2014-11-28 | 2014-11-28 | A kind of pulse width modulated power supply of beam excitation of logic-based protection emitter-base bandgap grading manifold type |
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