CN204304217U - Microencapsulated self-frequency-doubling laser - Google Patents
Microencapsulated self-frequency-doubling laser Download PDFInfo
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- CN204304217U CN204304217U CN201420714026.8U CN201420714026U CN204304217U CN 204304217 U CN204304217 U CN 204304217U CN 201420714026 U CN201420714026 U CN 201420714026U CN 204304217 U CN204304217 U CN 204304217U
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- 239000013078 crystal Substances 0.000 claims abstract description 55
- 239000012528 membrane Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000010981 turquoise Substances 0.000 abstract description 3
- 238000012856 packing Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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Abstract
The utility model relates to a kind of laser, specifically, relate to a kind of microencapsulated self-frequency-doubling laser, the utility model provide a kind of laser self frequency-doubling crystal and laser diode tube core are effectively encapsulated in same heat sink on, produce small size, the novel concept microencapsulated self-frequency-doubling laser of high light beam quality, it comprises laser diode tube core, self-frequency-doubling crystal, heat sink, laser diode tube core and self-frequency-doubling crystal keep at a certain distance away be fixed on one heat sink on, microencapsulated self-frequency-doubling laser of the present utility model achieves small size, the new ideas laser of high light beam quality, the laser diode that market at prices is higher can be substituted, such as turquoise laser diode.
Description
Technical field
The utility model relates to a kind of laser, specifically, relates to a kind of microencapsulated self-frequency-doubling laser.
Background technology
Along with the development of present science and technology, the range of application of laser also in rapid expansion, such as: Medical Instruments, construction account, instruction, military affairs, space flight etc.The application of these aspects all requires that laser is little as much as possible in size and weight, and output beam quality is similar to the output of TEM00 mould.And laser in the market comprises: the direct Output of laser of laser diode and laser diode-pumped crystal Output of laser.The direct quality for outputting laser beam of laser diode is poor, and luminous point fast and slow axis does not overlap and causes light beam focusing to there is serious aberration, and for blue light and green laser diode, cost is higher, can not effectively meet existing market demand; Laser diode-pumped crystal Output of laser, although be better than laser diode on beam quality, and at blue light and green light band, crystal Output of laser cost is lower, but the size of module cannot be compared with laser diode, limit the application of this laser in a lot of fields.If by the laser self frequency-doubling crystal of micron level and laser diode die package on same heat dispersion heat sink, the technological difficulties that above-mentioned two kinds of lasers exist all can solve.The laser crystal of current generation green glow is all employing two pieces composition, and one piece produces fundamental frequency light, and another block produces frequency doubled light.These two pieces of crystal generally adopt the mode of gummed or optical cement to combine, and near laser diode tube core luminous point, heat sink temperature is very high, easily causes crystal cleavage, and the non-linear mismatch of higher temperature crystal makes crystal light power not high.And self-frequency-doubling crystal merges fundamental crystal and frequency-doubling crystal is integrated, and crystal match angle is large, there is not non-linear mismatch problems compared with in large-temperature range, and completely can by tube core and crystal package on a smaller szie be heat sink.
Summary of the invention
The utility model overcomes above-mentioned defect, provide a kind of laser self frequency-doubling crystal and laser diode tube core are effectively encapsulated in same heat sink on, produce the novel concept microencapsulated self-frequency-doubling laser of small size, high light beam quality.
The technical scheme of microencapsulated self-frequency-doubling laser of the present utility model is such: it comprises laser diode tube core, self-frequency-doubling crystal, heat sink, laser diode tube core and self-frequency-doubling crystal keep at a certain distance away be fixed on one heat sink on.
Optimally, self-frequency-doubling crystal's input is coated with fundamental frequency light and frequency doubled light high-reflecting film, and output is coated with fundamental frequency light high-reflecting film and frequency doubled light anti-reflection film.
Optimally, the side metal-coated membrane that self-frequency-doubling crystal is wider, the one side of metal-coated membrane be fixed on heat sink on.
Optimally, the input of self-frequency-doubling crystal and the distance of laser diode tube core are set to be less than or equal to 1 millimeter, and make laser diode tube core luminous beam direction perpendicular to crystal input.
Optimally, self-frequency-doubling crystal is set to micron level.
Optimally, laser diode tube core is set to single tube LD.
The microencapsulated self-frequency-doubling laser of the technical program, laser diode tube core and self-frequency-doubling crystal keep at a certain distance away be fixed on one heat sink on, the technical program is under the prerequisite not changing laser diode overall dimension, laser diode tube core and micron level self-frequency-doubling crystal are encapsulated in same heat sink on, reduce the problem that existing mode of laser packet size is large greatly, current miniature laser market exists very large demand; Current green glow and blue light laser diode price higher, at short notice, be difficult to reduce costs, and the microencapsulated laser that the present invention relates to material its cheap market price used, and can large batch ofly produce, turquoise laser diode can be substituted.
The microencapsulated self-frequency-doubling laser of the technical program is coated with fundamental frequency light and frequency doubled light high-reflecting film at self-frequency-doubling crystal's input, and output is coated with fundamental frequency light high-reflecting film and frequency doubled light anti-reflection film, and crystal end-face can directly make chamber mirror, and such light treatment effect is very good.
The side metal-coated membrane that the technical program microencapsulated self-frequency-doubling laser self-frequency-doubling crystal is wider, the one side of metal-coated membrane be fixed on heat sink on, the side metal-coated membrane that self-frequency-doubling crystal is wider, the one side of metal-coated membrane be fixed on heat sink on, both junction heat sink surface roughness are little, are conducive to dissipating fast of crystal used heat.
The input of the technical program microencapsulated self-frequency-doubling laser self-frequency-doubling crystal and the distance of laser diode tube core are set to be less than or equal to 1 millimeter, and make laser diode tube core luminous beam direction perpendicular to crystal input, crystal length is determined according to tube core luminous power and final Output of laser power, after the laser coupled of the poor beam quality that laser diode tube core sends enters crystal, through the internal oscillation of self-frequency-doubling crystal self composition, export the TEM00 mould of high light beam quality.
The technical program microencapsulated self-frequency-doubling laser, self-frequency-doubling crystal is set to micron level, effectively can suppress the multiple mode oscillation of laser cavity, can realize single-mode laser and low noise output.
Microencapsulated self-frequency-doubling laser of the present utility model achieves the new ideas laser of small size, high light beam quality, can substitute the laser diode that market at prices is higher, such as turquoise laser diode.
Accompanying drawing explanation
Fig. 1 is the structural representation of microencapsulated self-frequency-doubling laser of the present utility model;
Fig. 2 is the structural representation of embodiment 1 of the present utility model.
1-laser diode tube core, 2-self-frequency-doubling crystal, 3-is heat sink, 4-both positive and negative polarity.
Embodiment
Embodiment 1:
The microencapsulated self-frequency-doubling laser of the present embodiment it comprise laser diode tube core 1, self-frequency-doubling crystal 2, heat sink 3, laser diode tube core 1 and self-frequency-doubling crystal 2 keep at a certain distance away and are fixed on one heat sink 3.Self-frequency-doubling crystal's input is coated with fundamental frequency light and frequency doubled light high-reflecting film, and output is coated with fundamental frequency light high-reflecting film and frequency doubled light anti-reflection film.The side metal-coated membrane that self-frequency-doubling crystal is wider, the one side of metal-coated membrane be fixed on heat sink on.The input of self-frequency-doubling crystal and the distance of laser diode tube core are set to equal 1 millimeter, and make laser diode tube core luminous beam direction perpendicular to crystal input.Self-frequency-doubling crystal is set to micron level.Laser diode tube core is set to single tube LD, and packing forms is set to C-mount, and as shown in the figure, below arranges both positive and negative polarity 4.
Embodiment 2:
The difference of the present embodiment and embodiment 1 is, the input of the self-frequency-doubling crystal of the present embodiment and the distance of laser diode tube core are set to 0.9 millimeter, and packing forms is set to TO encapsulation.
Embodiment 3:
The difference of embodiment 3 and embodiment 1 is, the distance of the laser diode tube core of the input of the self-frequency-doubling crystal of the present embodiment is set to 0.8 millimeter, and packing forms is set to TO encapsulation.
The foregoing is only preferred implementation of the present utility model, protection range of the present utility model is not limited in above-mentioned execution mode, and every technical scheme belonging to the utility model principle all belongs to protection range of the present utility model.For a person skilled in the art, the some improvement carried out under the prerequisite not departing from principle of the present utility model or retouching, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (6)
1. a microencapsulated self-frequency-doubling laser, is characterized in that: it comprises laser diode tube core, self-frequency-doubling crystal, heat sink, laser diode tube core and self-frequency-doubling crystal keep at a certain distance away be fixed on one heat sink on.
2. microencapsulated self-frequency-doubling laser according to claim 1, is characterized in that, self-frequency-doubling crystal's input is coated with fundamental frequency light and frequency doubled light high-reflecting film, and output is coated with fundamental frequency light high-reflecting film and frequency doubled light anti-reflection film.
3. microencapsulated self-frequency-doubling laser according to claim 1, is characterized in that, the side metal-coated membrane that self-frequency-doubling crystal is wider, the one side of metal-coated membrane be fixed on heat sink on.
4. microencapsulated self-frequency-doubling laser according to claim 1, it is characterized in that, the input of self-frequency-doubling crystal and the distance of laser diode tube core are set to be less than or equal to 1 millimeter, and make laser diode tube core luminous beam direction perpendicular to crystal input.
5. microencapsulated self-frequency-doubling laser according to claim 1, it is characterized in that, self-frequency-doubling crystal is set to micron level.
6. microencapsulated self-frequency-doubling laser according to claim 1, is characterized in that, laser diode tube core is set to single tube LD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420714026.8U CN204304217U (en) | 2014-11-25 | 2014-11-25 | Microencapsulated self-frequency-doubling laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420714026.8U CN204304217U (en) | 2014-11-25 | 2014-11-25 | Microencapsulated self-frequency-doubling laser |
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| Publication Number | Publication Date |
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| CN204304217U true CN204304217U (en) | 2015-04-29 |
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| CN201420714026.8U Active CN204304217U (en) | 2014-11-25 | 2014-11-25 | Microencapsulated self-frequency-doubling laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538838A (en) * | 2014-11-25 | 2015-04-22 | 青岛镭创光电技术有限公司 | Mintype packaging self-frequency-doubling laser |
| CN111224314A (en) * | 2018-11-26 | 2020-06-02 | 潍坊华光光电子有限公司 | Self-indication surface-mounted semiconductor laser and packaging method thereof |
-
2014
- 2014-11-25 CN CN201420714026.8U patent/CN204304217U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538838A (en) * | 2014-11-25 | 2015-04-22 | 青岛镭创光电技术有限公司 | Mintype packaging self-frequency-doubling laser |
| CN111224314A (en) * | 2018-11-26 | 2020-06-02 | 潍坊华光光电子有限公司 | Self-indication surface-mounted semiconductor laser and packaging method thereof |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Mintype packaging self-frequency-doubling laser Effective date of registration: 20160918 Granted publication date: 20150429 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Registration number: 2016990000789 |
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| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170821 Granted publication date: 20150429 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Registration number: 2016990000789 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Mintype packaging self-frequency-doubling laser Effective date of registration: 20170928 Granted publication date: 20150429 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Registration number: 2017370010063 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180816 Granted publication date: 20150429 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Registration number: 2017370010063 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Mintype packaging self-frequency-doubling laser Effective date of registration: 20190201 Granted publication date: 20150429 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Registration number: 2019370010014 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20200915 Granted publication date: 20150429 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO LASENCE PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Registration number: 2019370010014 |
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