CN204303820U - Silicon radiation detector encapsulating structure - Google Patents

Silicon radiation detector encapsulating structure Download PDF

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Publication number
CN204303820U
CN204303820U CN201520000734.XU CN201520000734U CN204303820U CN 204303820 U CN204303820 U CN 204303820U CN 201520000734 U CN201520000734 U CN 201520000734U CN 204303820 U CN204303820 U CN 204303820U
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CN
China
Prior art keywords
cover layer
intermediate host
layer
respectively equipped
front cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201520000734.XU
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Chinese (zh)
Inventor
吴佳
张红
孙瑞峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou Huacheng Changban Microelectronics Co Ltd
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Changzhou Huacheng Changban Microelectronics Co Ltd
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Priority to CN201520000734.XU priority Critical patent/CN204303820U/en
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Publication of CN204303820U publication Critical patent/CN204303820U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model relates to the technical field of printed circuit board, especially a kind of Si detector encapsulating structure, comprise the front cover layer connected successively, intermediate host layer and rear cover layer, the laminated embedded octagon groove of intermediate host, another side is provided with hole, the two sides of intermediate host layer is respectively equipped with and is no less than a bonding briquetting, the two sides of intermediate host layer is respectively equipped with and is no less than an electrode leads to client, front cover layer with rear cover layer is respectively equipped with the pad otch corresponding with bonding briquetting position on intermediate host layer and the outgoing cable otch corresponding with electrode leads to client position.Front cover layer, intermediate host layer and rear cover layer are respectively equipped with and are no less than 3 installing holes.Si detector encapsulating structure of the present utility model is that one piece of pcb board instead of again a package casing, is conducive to reduced volume, weight reduction, good reliability, can meets the requirement of space product, be specially adapted to the encapsulating housing of transducer, detector.

Description

Silicon radiation detector encapsulating structure
Technical field
The utility model relates to the technical field of printed circuit board, especially a kind of silicon radiation detector encapsulating structure.
Background technology
Making one piece of pcb board, take insulating material as the plate that substrate is processed into certain size, and have a conductive pattern and designed good hole above at least, to realize the electrical connection between electronic devices and components, such plate is called printed circuit board.Usual PCB can provide fixing for packaged electronic devices and components (resistance, electric capacity, inductance, two, triode and integrated circuit), the mechanical support of assembling, the electrical connection between electronic devices and components can be realized, electronic component has a variety of packing forms, and the mounting means of element on PCB of different packing forms is also different.Traditional electronic component is mostly contact pin type, and volume is comparatively large, for this element, needs could install after boring on PCB.Component pin through being welded on the pad of PCB another side, also will wipe out unnecessary pin after having welded from boring.And PCB version is in the past confined to packaged electronic component; chip (referring to bare chip) is bundled in PCB version and must protects with black glue; this black glue protection is also a kind of packing forms; i.e. Soft Roll envelope; claim the encapsulation of non-NULL envelope; reliability is poor, can only be used for civilian goods and industrial goods, can not be applied to space flight and aviation military products.
Utility model content
In order to overcome the deficiency of existing technology, the utility model provides a kind of silicon radiation detector encapsulating structure.
The utility model solves the technical scheme that its technical problem adopts: a kind of silicon radiation detector encapsulating structure, comprise front cover layer, intermediate host layer and rear cover layer, described front cover layer, intermediate host layer and rear cover layer are connected in turn, the laminated embedded groove one of described intermediate host, another side is provided with hole one, the two sides of described intermediate host layer is respectively equipped with and is no less than a bonding briquetting, the two sides of described intermediate host layer is respectively equipped with and is no less than an electrode leads to client, described front cover layer is provided with a groove two corresponding with intermediate host layer upper groove one, described rear cover layer is provided with a hole two corresponding with hole one on intermediate host layer, described front cover layer with rear cover layer is respectively equipped with the pad otch corresponding with bonding briquetting position on intermediate host layer, described front cover layer with rear cover layer is respectively equipped with the outgoing cable otch corresponding with intermediate host layer top electrode exit position.
According to another embodiment of the present utility model, comprise further described front cover layer, intermediate host layer and rear cover layer be respectively equipped with and be no less than 3 installing holes.
According to another embodiment of the present utility model, comprising described groove one is further octagon, and described groove two is octagon.
The beneficial effects of the utility model are, silicon radiation detector encapsulating structure is that one piece of pcb board instead of again a package casing, is conducive to reduced volume, weight reduction, good reliability, can meet the feature requirement of aerospace electron product, be specially adapted to the encapsulating housing of transducer, detector.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the utility model is further illustrated.
Fig. 1 is front tectal structural representation of the present utility model;
Fig. 2 is the structural representation of the embedded groove one side of intermediate host layer of the present utility model;
Fig. 3 is the structural representation of the one side of the perforate of intermediate host layer of the present utility model;
Fig. 4 is rear tectal structural representation of the present utility model;
Fig. 5 is the structural representation of entirety of the present utility model.
Cover layer, 2. intermediate host layer before 1. in figure, cover layer, 4. groove one, 5. hole one, 6. bonding briquetting, 7. electrode leads to client, 8. pad otch, 9. outgoing cable otch, 10. installing hole 3., 11. groove two, 12. holes two.
Embodiment
As shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4 and Fig. 5 ,a kind of silicon radiation detector encapsulating structure, comprise front cover layer 1, intermediate host layer 2 and rear cover layer 3, front cover layer 1, intermediate host layer 2 and rear cover layer 3 are connected in turn, the embedded groove 1 of intermediate host layer 2 one side, another side is provided with hole 1, the two sides of intermediate host layer 2 is respectively equipped with and is no less than a bonding briquetting 6, the two sides of intermediate host layer 2 is respectively equipped with and is no less than an electrode leads to client 7, front cover layer 1 is provided with a groove two 11 corresponding with intermediate host layer 2 upper groove 1, rear cover layer 3 is provided with a hole two 12 corresponding with hole 1 on intermediate host layer 2, front cover layer 1 is respectively equipped with the pad otch 8 corresponding with bonding briquetting 6 position on intermediate host layer 2 with on rear cover layer 3, front cover layer 1 with rear cover layer 3 is respectively equipped with the outgoing cable otch 9 corresponding with intermediate host layer 2 top electrode exit 7 position.Preferably, front cover layer 1, intermediate host layer 2 and rear cover layer 3 are respectively equipped with are no less than 3 installing holes 10.Groove 1 is octagon, and groove 2 11 is octagon.
The utility model in use, silicon radiation detector silicon is cut into octagon and (maximumly utilize chip real estate, and facilitate chip cutting), embed in the octagonal indentations 1 on intermediate host layer 2 by adhesive, the electrode of silicon is formed by Si-Al silk ultrasonic bonding technique with bonding briquetting on intermediate host layer 26 respectively and is electrically connected, electrode leads to client 7 realizes this device and outside electrical connection, front cover layer 1 and rear cover layer 3 are mainly used in the protection to bonding briquetting 6 and electrode leads to client 7 on middle body layer 2, and play beauty function, the lamination application of multiple silicon radiation detector can be realized simultaneously, complete the detection needs of different radiation level.

Claims (3)

1. a silicon radiation detector encapsulating structure, comprise front cover layer (1), intermediate host layer (2) and rear cover layer (3), described front cover layer (1), intermediate host layer (2) and rear cover layer (3) are connected in turn, it is characterized in that, the embedded groove one (4) of described intermediate host layer (2) one side, another side is provided with hole one (5), the two sides of described intermediate host layer (2) is respectively equipped with and is no less than a bonding briquetting (6), the two sides of described intermediate host layer (2) is respectively equipped with and is no less than an electrode leads to client (7), described front cover layer (1) is provided with a groove two (11) corresponding with intermediate host layer (2) upper groove one (4), described rear cover layer (3) is provided with a hole two (12) corresponding with the upper hole one (5) of intermediate host layer (2), the pad otch (8) that described front cover layer (1) is corresponding with rear cover layer (3) being respectively equipped with bonding briquetting (6) position upper with intermediate host layer (2), described front cover layer (1) with rear cover layer (3) is respectively equipped with the outgoing cable otch (9) corresponding with intermediate host layer (2) top electrode exit (7) position.
2. silicon radiation detector encapsulating structure according to claim 1, is characterized in that, described front cover layer (1), intermediate host layer (2) and rear cover layer (3) is respectively equipped with and is no less than 3 installing holes (10).
3. silicon radiation detector encapsulating structure according to claim 1, is characterized in that, described groove one (4) is octagon, and described groove two (11) is octagon.
CN201520000734.XU 2015-01-04 2015-01-04 Silicon radiation detector encapsulating structure Expired - Fee Related CN204303820U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520000734.XU CN204303820U (en) 2015-01-04 2015-01-04 Silicon radiation detector encapsulating structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520000734.XU CN204303820U (en) 2015-01-04 2015-01-04 Silicon radiation detector encapsulating structure

Publications (1)

Publication Number Publication Date
CN204303820U true CN204303820U (en) 2015-04-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520000734.XU Expired - Fee Related CN204303820U (en) 2015-01-04 2015-01-04 Silicon radiation detector encapsulating structure

Country Status (1)

Country Link
CN (1) CN204303820U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112635580A (en) * 2020-12-21 2021-04-09 中国科学院国家空间科学中心 Silicon semiconductor sensor for space particle detection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112635580A (en) * 2020-12-21 2021-04-09 中国科学院国家空间科学中心 Silicon semiconductor sensor for space particle detection

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150429

CF01 Termination of patent right due to non-payment of annual fee