CN204289437U - A kind of light-emitting diode of high-color rendering - Google Patents
A kind of light-emitting diode of high-color rendering Download PDFInfo
- Publication number
- CN204289437U CN204289437U CN201420225258.7U CN201420225258U CN204289437U CN 204289437 U CN204289437 U CN 204289437U CN 201420225258 U CN201420225258 U CN 201420225258U CN 204289437 U CN204289437 U CN 204289437U
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- Prior art keywords
- bipolar electrode
- light
- chip
- red light
- color rendering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
Abstract
The utility model relates to LED technology field, particularly a kind of light-emitting diode of high-color rendering.During this diode operation, bipolar electrode blue chip sends blue light and sends dark green light to excite yellow-green fluorescence glue, and bipolar electrode ruddiness optical chip sends ruddiness, and red light mixes the white light that can obtain high-color rendering with dark green light; In addition, owing to making the light-emitting area of bipolar electrode blue chip and bipolar electrode red light chips at grade, ensure the light that chip height difference can not be answered to cause one of them chip to absorb another chip sending, ensure that brightness and the color rendering of product.Simultaneously, bipolar electrode blue chip is adopted to arrange in pairs or groups mutually with these two kinds of chips of bipolar electrode red light chips, because both are close at height value, therefore, it is possible to both ensureing under the condition of not changing supporting structure or welding procedure contour (light-emitting area at grade), reduce and remove production difficulty and production cost.
Description
Technical field
The utility model relates to LED technology field, particularly a kind of light-emitting diode of high-color rendering.
Background technology
In illumination places such as room lightings, the LED diode of employing need be white light LED diode, but as everyone knows, LED wafer directly cannot send white light, therefore needs to make LED diode send white light by some encapsulating structure treasured.Current scheme generally has:
1.RGB three primary colors chip hybrid becomes white light: be encapsulated within individual devices by red, green, blue three-color LED power-type integrated chip, regulate the proportioning of three primary colors, the light of shades of colour can be obtained in theory, namely can produce broad band white light by the operating current of adjustment three-color LED chip.But because the quantum efficiency of red, green, blue three kinds of color LED chips is different, the change separately with temperature and drive current is different, and decay is in time also different, so the colourity exporting white light is unstable.In order to make it stablize, needing to add feedback circuit respectively to three kinds of colors and compensating, so its encapsulating structure is complicated, circuit realiration difficulty, white light poor stability, cost is high
2. near ultraviolet LED chip excitated fluorescent powder: adopt the near ultraviolet LED (400nm) of high brightness to excite RGB three primary colors fluorescent powder, produce red, green, blue three primary colors, and can white light be formed by the proportioning of adjustment three-color phosphor.But the power-type near ultraviolet LED chip of high-luminous-efficiency is not easy to make, expensive, and encapsulating material (as silica gel etc.) is easily aging under the irradiation of ultraviolet light, the life-span is short; There is the potential safety hazard of ultraviolet leakage in addition.
Based on above problem, propose in the industry and adopt the combination of blue LED wafers, red-light LED wafer and fluorescent material to realize the white light LEDs of high-color rendering.But the color rendering of the diode after finding encapsulation in practice process is obviously worse than theoretical value.To this, inventor finds after experimental study, and subject matter is: the selection issue of (1) fluorescent material; (2) in practice process due to those skilled in the art to the problems such as the type selecting custom of LED wafer cause blue LED wafers and red-light LED wafer height inconsistent, and then the light-emitting area causing blue LED wafers and red-light LED wafer is no longer on same plane, be generally red-light LED wafer height higher than blue LED wafers, therefore red-light LED wafer understands the light that absorption portion blue LED wafers sends, thus cause light-emitting diode whole lighting efficiency low, and the deficiency of blue light also can cause its color rendering poor.
Summary of the invention
The purpose of this utility model is avoid above-mentioned weak point of the prior art and provide a kind of luminous efficiency high, the light-emitting diode that color rendering is good.
The purpose of this utility model is achieved through the following technical solutions:
Provide a kind of light-emitting diode of high-color rendering, comprise support, described support forms Lamp cup, described support is provided with bipolar electrode blue chip and bipolar electrode red light chips, the height value of described bipolar electrode blue chip is identical with the height value of bipolar electrode red light chips to make bipolar electrode blue chip and bipolar electrode red light chips light-emitting area at grade, described bipolar electrode blue chip and bipolar electrode red light chips are connected in parallel, and fill out and be covered with yellow-green fluorescence glue above described bipolar electrode blue chip and bipolar electrode red light chips.
Wherein: the gallium-nitride blue chip of described bipolar electrode blue chip to be wavelength be 440-460nm.
Wherein: the GaAs red light chips of described bipolar electrode red light chips to be wavelength be 615-630nm.
Wherein: described yellow-green fluorescence glue is the yellowish green fluorescent powder of 510-540nm and mixing of silica gel by wavelength.
Wherein: described bipolar electrode blue chip and bipolar electrode red light chips all adopt heat conduction die bond silica gel to be fixed on support.
Wherein: described bipolar electrode blue chip forward current is 20mA, and forward voltage is 2.8-3.6V, described bipolar electrode red light chips forward current is 20mA, and forward voltage is 2.0-2.4V.
The beneficial effects of the utility model: the utility model provides a kind of luminous efficiency high, the light-emitting diode that color rendering is good.During work, bipolar electrode blue chip sends blue light to excite yellow-green fluorescence glue, and yellow-green fluorescence powder is stimulated and sends dark green light, and bipolar electrode ruddiness optical chip emitted light can not excite yellow-green fluorescence glue, still send with red light, red light mixes the white light that can obtain high-color rendering with dark green light; In addition, owing to making the light-emitting area of bipolar electrode blue chip and bipolar electrode red light chips at grade, ensure the light that chip height difference can not be answered to cause one of them chip to absorb another chip sending, ensure that brightness and the color rendering of product.Simultaneously, bipolar electrode blue chip is adopted to arrange in pairs or groups mutually with these two kinds of chips of bipolar electrode red light chips, because both are close at height value, therefore, it is possible to both ensureing under the condition of not changing supporting structure or welding procedure contour (light-emitting area at grade), reduce and remove production difficulty and production cost.
Accompanying drawing explanation
The utility model is described in further detail to utilize accompanying drawing, but the embodiment in accompanying drawing does not form any restriction of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the following drawings.
Fig. 1 is the schematic side view of the light-emitting diode of a kind of high-color rendering of the utility model.
Fig. 2 is the schematic top plan view of the light-emitting diode of a kind of high-color rendering of the utility model.
Fig. 3 is the spectral curve of the light-emitting diode of a kind of high-color rendering of the utility model.
Embodiment
With the following Examples the utility model is further described.
The embodiment of the light-emitting diode of a kind of high-color rendering of the utility model, as shown in Figure 1 to Figure 2, comprise: support 1, described support 1 forms Lamp cup 4, described support 1 is provided with bipolar electrode blue chip 3 and bipolar electrode red light chips 2, the height value of described bipolar electrode blue chip 3 is identical with the height value of bipolar electrode red light chips 2 to make bipolar electrode blue chip 3 and bipolar electrode red light chips 2 light-emitting area at grade, described bipolar electrode blue chip 3 and bipolar electrode red light chips 2 are connected in parallel, fill out above described bipolar electrode blue chip 3 and bipolar electrode red light chips 2 and be covered with yellow-green fluorescence glue 5.
The utility model provides a kind of luminous efficiency high, the light-emitting diode that color rendering is good.During work, bipolar electrode blue chip 3 sends blue light to excite yellow-green fluorescence glue, and yellow-green fluorescence powder is stimulated and sends dark green light, and bipolar electrode ruddiness optical chip emitted light can not excite yellow-green fluorescence glue, still send with red light, red light mixes the white light that can obtain high-color rendering with dark green light; In addition, owing to making the light-emitting area of bipolar electrode blue chip 3 and bipolar electrode red light chips 2 at grade, ensure the light that chip height difference can not be answered to cause one of them chip to absorb another chip sending, ensure that brightness and the color rendering of product.Simultaneously, bipolar electrode blue chip 3 is adopted to arrange in pairs or groups mutually with these two kinds of chips of bipolar electrode red light chips 2, because both are close at height value, therefore, it is possible to both ensureing under the condition of not changing support 1 structure or welding procedure contour (light-emitting area at grade), reduce and remove production difficulty and production cost.The present embodiment the spectrum of white light that obtains of white light-emitting diodes as shown in Figure 3, the spectral distribution of its spectral distribution very access expansion light, the diode of visible the present embodiment has good color rendering.
Described bipolar electrode blue chip 3 for wavelength be the gallium-nitride blue chip of 440-460nm.Described bipolar electrode red light chips 2 for wavelength be the GaAs red light chips of 615-630nm.Described yellow-green fluorescence glue 5 is the yellowish green fluorescent powder of 510-540nm and mixing of silica gel by wavelength, described bipolar electrode blue chip 3 forward current is 20mA, forward voltage is 2.8-3.6V, and described bipolar electrode red light chips 2 forward current is 20mA, and forward voltage is 2.0-2.4V.Adopt type selecting and the Current Control intensity of above chip, fluorescent material, spectrum white light as shown in Figure 3 can be obtained, visible, the spectrum of the white light obtained under this kind of scheme and the spectrum of natural daylight very close, there is good color rendering.
Wherein: described bipolar electrode blue chip 3 and bipolar electrode red light chips 2 all adopt heat conduction die bond silica gel to be fixed on support 1.Two kinds all adopt the crystal-bonding adhesive of silicon material to be conducive to both guarantees in technologic consistency, guarantee that both light-emitting areas are at same plane further.
Finally should be noted that; above embodiment is only in order to illustrate the technical solution of the utility model; but not the restriction to the utility model protection range; although done to explain to the utility model with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify to the technical solution of the utility model or equivalent replacement, and not depart from essence and the scope of technical solutions of the utility model.
Claims (5)
1. the light-emitting diode of a high-color rendering, comprise support, described support forms Lamp cup, it is characterized in that: described support is provided with bipolar electrode blue chip and bipolar electrode red light chips, the height value of described bipolar electrode blue chip is identical with the height value of bipolar electrode red light chips to make bipolar electrode blue chip and bipolar electrode red light chips light-emitting area at grade, described bipolar electrode blue chip and bipolar electrode red light chips are connected in parallel, and fill out and be covered with yellow-green fluorescence glue above described bipolar electrode blue chip and bipolar electrode red light chips.
2. the light-emitting diode of a kind of high-color rendering as claimed in claim 1, is characterized in that: the gallium-nitride blue chip of described bipolar electrode blue chip to be wavelength be 440-460nm.
3. the light-emitting diode of a kind of high-color rendering as claimed in claim 1, is characterized in that: the GaAs red light chips of described bipolar electrode red light chips to be wavelength be 615-630nm.
4. the light-emitting diode of a kind of high-color rendering as claimed in claim 1, is characterized in that: described bipolar electrode blue chip and bipolar electrode red light chips all adopt heat conduction die bond silica gel to be fixed on support.
5. the light-emitting diode of a kind of high-color rendering as claimed in claim 1, it is characterized in that: described bipolar electrode blue chip forward current is 20mA, forward voltage is 2.8-3.6V, and described bipolar electrode red light chips forward current is 20mA, and forward voltage is 2.0-2.4V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420225258.7U CN204289437U (en) | 2014-05-05 | 2014-05-05 | A kind of light-emitting diode of high-color rendering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420225258.7U CN204289437U (en) | 2014-05-05 | 2014-05-05 | A kind of light-emitting diode of high-color rendering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204289437U true CN204289437U (en) | 2015-04-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420225258.7U Expired - Fee Related CN204289437U (en) | 2014-05-05 | 2014-05-05 | A kind of light-emitting diode of high-color rendering |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204289437U (en) |
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2014
- 2014-05-05 CN CN201420225258.7U patent/CN204289437U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20161018 Address after: Guangdong province Zhongshan City Linsen road 528400 Xiaolan Town No. 1 building 1-10 building /11 building 12-15 (an additional 2 business premises Yucheng Xiaolan Town Three Street No. 6, South Street, Xiaolan Town, No. 1) Patentee after: Zhongshan M.L.S. Electronics Co., Ltd. Address before: Limited by Share Ltd No. 1 road 528415 Guangdong Linsen wood Linsen Zhongshan City Xiaolan Town Patentee before: MLS Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150422 Termination date: 20180505 |
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| CF01 | Termination of patent right due to non-payment of annual fee |