CN204243025U - A kind of metal-oxide-semiconductor fixed structure - Google Patents

A kind of metal-oxide-semiconductor fixed structure Download PDF

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Publication number
CN204243025U
CN204243025U CN201420812744.9U CN201420812744U CN204243025U CN 204243025 U CN204243025 U CN 204243025U CN 201420812744 U CN201420812744 U CN 201420812744U CN 204243025 U CN204243025 U CN 204243025U
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China
Prior art keywords
oxide
metal
semiconductor
fin
screw
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Expired - Fee Related
Application number
CN201420812744.9U
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Chinese (zh)
Inventor
陈泽坚
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Atech Automotive Wuhu Co Ltd
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Atech Automotive Wuhu Co Ltd
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Priority to CN201420812744.9U priority Critical patent/CN204243025U/en
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Publication of CN204243025U publication Critical patent/CN204243025U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model discloses a kind of metal-oxide-semiconductor fixed structure, comprise metal-oxide-semiconductor (3) and fin (5), also comprise shell fragment (2), shell fragment (2) comprises body (21), body (21) is provided with card-tight part (22) that is outwardly, elastically deformable, and shell fragment (2) and fin (5) are connected by screw (1) and are clamped between card-tight part (22) and fin (5) by metal-oxide-semiconductor (3); Body (21) both sides are also provided with outward extending extension (23), extension (23) is provided with the through hole that screw (1) can be supplied to pass, screw (1) is threaded with the screw base (51) on fin (5), the position of extension (23) makes screw (1) not contact with metal-oxide-semiconductor (3), fixed form is simple, efficient, and cost is not high, use the structure of metal-oxide-semiconductor (3) especially practical to large area.

Description

A kind of metal-oxide-semiconductor fixed structure
Technical field
The utility model belongs to metal-oxide-semiconductor technical field, particularly relates to a kind of metal-oxide-semiconductor fixed structure.
Background technology
Along with the develop rapidly of industry, need the field of using MOS to control more and more extensive, the fixing mode of metal-oxide-semiconductor (metal-oxide-semiconductor field effect transistor) is also varied.Common metal-oxide-semiconductor is all adopt the mode such as screw, paster, then contacts with fin,
Realizing in process of the present utility model, utility model people finds that prior art at least exists following problem: generally, and screw is fixing needs each metal-oxide-semiconductor to adopt a screw, and operation is numerous and diverse, and has the risk causing short circuit; Paster mode needs metal-oxide-semiconductor to be attached on aluminium base, then is attached on fin by aluminium base, and this structure use cost is higher and operation is more, and technological requirement is also very high.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of metal-oxide-semiconductor and fin of realizing and fixes and good fit, the metal-oxide-semiconductor fixed structure that safe and reliable, easy for installation, cost is low.
In order to solve the problems of the technologies described above, the technical scheme that the utility model adopts is: a kind of metal-oxide-semiconductor fixed structure, comprise metal-oxide-semiconductor and fin, also comprise shell fragment, described shell fragment comprises body, described body is provided with card-tight part that is outwardly, elastically deformable, and described shell fragment and fin are connected by screw and are clamped between card-tight part and fin by metal-oxide-semiconductor;
Described body both sides are also provided with outward extending extension, and described extension is provided with the through hole that can pass for screw, and described screw is threaded with the screw base on fin, and the position of extension makes screw not contact with metal-oxide-semiconductor.
Insulating trip is provided with between described metal-oxide-semiconductor and fin.
Described body is provided with outward extending grip part.
Described card-tight part quantity has two at least, a corresponding metal-oxide-semiconductor of card-tight part.
Described shell fragment material is SUS301.
A technical scheme tool in technique scheme has the following advantages or beneficial effect, and fixed form is simple, efficient, and cost is not high, uses the structure of metal-oxide-semiconductor especially practical to large area.By shell fragment, metal-oxide-semiconductor and fin are closely fixed together, the clamping part while fixing on shell fragment can apply normal pressure directly over metal-oxide-semiconductor, makes metal-oxide-semiconductor and fin is smooth fits closely, to reach best radiating effect.Mould aspect, single part mould is simple, is conducive to producing in enormous quantities, and assembling between part is simple.
Accompanying drawing explanation
The decomposition texture schematic diagram of metal-oxide-semiconductor fixed structure of Fig. 1 for providing in the utility model embodiment;
Fig. 2 is the cutaway view of Fig. 1 metal-oxide-semiconductor fixed structure;
Fig. 3 is the structural representation of the shell fragment of Fig. 1 metal-oxide-semiconductor fixed structure;
Mark in above-mentioned figure is: 1, screw, and 2, shell fragment, 21, body, 22, card-tight part, 23, extension, 24, grip part, 3, metal-oxide-semiconductor, 4, insulating trip, 5, fin, 51, screw base.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the utility model execution mode is described in further detail.
See Fig. 1 and Fig. 2, a kind of metal-oxide-semiconductor fixed structure, comprise metal-oxide-semiconductor 3 and fin 5, also comprise shell fragment 2, as shown in Figure 3, shell fragment 2 comprises body 21, and body 21 is provided with card-tight part 22 that is outwardly, elastically deformable, and shell fragment 2 and fin 5 are connected by screw 1 and are clamped between card-tight part 22 and fin 5 by metal-oxide-semiconductor 3;
Body 21 both sides are also provided with outward extending extension 23, and extension 23 is provided with the through hole that can pass for screw 1, and screw 1 is threaded with the screw base 51 on fin 5, and the position of extension 23 makes screw 1 not contact with metal-oxide-semiconductor 3.
Insulating trip 4 is provided with between metal-oxide-semiconductor 3 and fin 5.Play insulation effect.
Body 21 is provided with outward extending grip part 24.Be convenient to picking and placeing and installing of shell fragment 2.
The fin 5 of shell fragment 2 and ragged edge is fixed by screw 1, and all parts are all fixed on centre, and this assembling mode can make part easy for installation, difficult drop-off.
Card-tight part 22 quantity has three, a corresponding metal-oxide-semiconductor 3 of card-tight part 22.
Shell fragment 2 material is SUS301.This elastic properties of materials is good, not easily burn into be easy to shaping.
An installation method for above-mentioned metal-oxide-semiconductor 3 fixed structure, comprises the steps:
1) insulating trip 4 is attached on fin 5,
2) metal-oxide-semiconductor 3 is placed on insulating trip 4,
3) put corresponding with metal-oxide-semiconductor 3 for the card-tight part 22 of shell fragment 2, screw 1 is threaded with the screw base 51 on fin 5 through the through hole of extension 23, fixation spring tab 2, and clamps metal-oxide-semiconductor 3 by the card-tight part 22 of shell fragment 2.
Screw 1 is when passing the through hole of extension 23, being connected with fin 5, and screw 1 does not contact MOS and insulating trip 4.
After adopting above-mentioned structure, fixed form is simple, efficient, and cost is not high, uses the structure of metal-oxide-semiconductor 3 especially practical to large area.By shell fragment 2, metal-oxide-semiconductor 3 and fin 5 are closely fixed together, the clamping part while fixing on shell fragment 2 can apply normal pressure directly over metal-oxide-semiconductor 3, and metal-oxide-semiconductor 3 is fitted with fin 5 is smooth, closely to reach best radiating effect.Mould aspect, single part mould is simple, is conducive to producing in enormous quantities, and assembling between part is simple.
By reference to the accompanying drawings the utility model is exemplarily described above; obvious the utility model specific implementation is not subject to the restrictions described above; as long as have employed the improvement of the various unsubstantialities that method of the present utility model is conceived and technical scheme is carried out; or design of the present utility model and technical scheme directly applied to other occasion, all within protection range of the present utility model without to improve.

Claims (5)

1. a metal-oxide-semiconductor fixed structure, comprise metal-oxide-semiconductor (3) and fin (5), it is characterized in that, also comprise shell fragment (2), described shell fragment (2) comprises body (21), described body (21) is provided with card-tight part (22) that is outwardly, elastically deformable, and described shell fragment (2) and fin (5) are connected by screw (1) and are clamped between card-tight part (22) and fin (5) by metal-oxide-semiconductor (3);
Described body (21) both sides are also provided with outward extending extension (23), described extension (23) is provided with the through hole that screw (1) can be supplied to pass, described screw (1) is threaded with the screw base (51) on fin (5), and the position of extension (23) makes screw (1) not contact with metal-oxide-semiconductor (3).
2. metal-oxide-semiconductor fixed structure as claimed in claim 1, is characterized in that, be provided with insulating trip (4) between described metal-oxide-semiconductor (3) and fin (5).
3. metal-oxide-semiconductor fixed structure as claimed in claim 1 or 2, it is characterized in that, described body (21) is provided with outward extending grip part (24).
4. metal-oxide-semiconductor fixed structure as claimed in claim 3, it is characterized in that, described card-tight part (22) quantity has two at least, a corresponding metal-oxide-semiconductor (3) of card-tight part (22).
5. metal-oxide-semiconductor fixed structure as claimed in claim 4, it is characterized in that, described shell fragment (2) material is SUS301.
CN201420812744.9U 2014-12-19 2014-12-19 A kind of metal-oxide-semiconductor fixed structure Expired - Fee Related CN204243025U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420812744.9U CN204243025U (en) 2014-12-19 2014-12-19 A kind of metal-oxide-semiconductor fixed structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420812744.9U CN204243025U (en) 2014-12-19 2014-12-19 A kind of metal-oxide-semiconductor fixed structure

Publications (1)

Publication Number Publication Date
CN204243025U true CN204243025U (en) 2015-04-01

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Application Number Title Priority Date Filing Date
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465559A (en) * 2014-12-19 2015-03-25 埃泰克汽车电子(芜湖)有限公司 MOS transistor fixing structure and mounting method thereof
CN108878389A (en) * 2018-08-09 2018-11-23 苏州加拉泰克动力有限公司 Radiator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465559A (en) * 2014-12-19 2015-03-25 埃泰克汽车电子(芜湖)有限公司 MOS transistor fixing structure and mounting method thereof
CN108878389A (en) * 2018-08-09 2018-11-23 苏州加拉泰克动力有限公司 Radiator

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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150401

Termination date: 20151219

EXPY Termination of patent right or utility model