CN204168179U - A kind of high accuracy semi-bridge inversion Drive Protecting Circuit - Google Patents
A kind of high accuracy semi-bridge inversion Drive Protecting Circuit Download PDFInfo
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- CN204168179U CN204168179U CN201420552812.2U CN201420552812U CN204168179U CN 204168179 U CN204168179 U CN 204168179U CN 201420552812 U CN201420552812 U CN 201420552812U CN 204168179 U CN204168179 U CN 204168179U
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Abstract
The utility model discloses a kind of high accuracy semi-bridge inversion Drive Protecting Circuit, comprise pwm signal input and the upper switch tube driving circuit that is connected with pwm signal input and lower switch tube driving circuit; Described upper switch tube driving circuit comprises diode D1, resistance R6, filter capacitor C1, resistance R7; Described lower switch driving circuit comprises triode Q1, diode D2, filter capacitor C2, resistance R4, resistance R5.The utility model increases the Dead Time of drive singal from hardware circuit, eliminates some low precision controlling chips and causes unstable impact because of Power MOSFET inaccuracy to product; Realize only needing control chip PWM output signal just can realize two-tube driving, reduce product to the requirement of control chip PWM resource.
Description
Technical field
The utility model relates to half-bridge inversion circuit technology, particularly relates to a kind of high accuracy semi-bridge inversion Drive Protecting Circuit.
Background technology
Half bridge inverter circuit structure is simple, uses switching device few, with low cost, is widely used in the product such as small-power uninterrupted power supply, inverter, frequency converter of domestic and international many manufacturer production.Half bridge inverter circuit mainly comprises main circuit and Drive Protecting Circuit two large divisions; can the IGBT switching tube wherein on main circuit normal reliable work play vital effect to system cloud gray model; the effect of Drive Protecting Circuit is exactly that the pwm signal that control circuit exports is carried out power amplification, with the requirement of satisfied driving IGBT switching tube.Meanwhile, the performance of Drive Protecting Circuit is also directly connected to the switching speed of IGBT switching tube, power consumption, overall efficiency and reliability.Along with the raising of IGBT switching tube break-make frequency, the optimal design of Drive Protecting Circuit is just even more important.The drive circuit that existing market is used is simply to be amplified by pwm signal, the control of its reliability is only based on the performance of control chip, but for the control chip that some precision are lower, its reliability is lower, because cost reason is had to again use, this just causes the reduction of product stability.
Utility model content
For overcoming the deficiencies in the prior art; the purpose of this utility model is to provide a kind of high accuracy semi-bridge inversion Drive Protecting Circuit; a PWM that can realize control chip drives resource just can drive two pipes up and down of semi-bridge inversion; reduce product to the requirement of control chip PWM resource; and increase drive singal Dead Time from hardware circuit, solve some low precision controlling chips, because of Power MOSFET inaccuracy, instable impact is caused on product.
The utility model is the technical scheme solving the employing of its technical problem:
A kind of high accuracy semi-bridge inversion Drive Protecting Circuit, comprises pwm signal input and the upper switch tube driving circuit that is connected with pwm signal input and lower switch tube driving circuit; Described upper switch tube driving circuit comprises diode D1, resistance R6, filter capacitor C1, resistance R7, the negative pole of described diode D1 connects pwm signal input, positive pole is contact resistance R6, filter capacitor C1 and earth terminal successively, described resistance R7 is connected in parallel in the two ends of diode D1 and resistance R6, and described resistance R6 is connected with upper switching tube drive singal output by sign-changing amplifier U1; Described lower switch driving circuit comprises triode Q1, diode D2, filter capacitor C2, resistance R4, resistance R5, the base stage of described triode Q1 connects pwm signal input, emitter connects earth terminal, collector electrode is connected with positive signal source, the negative pole of diode D2 is connected with the collector electrode of triode Q1, positive pole contact resistance R4, filter capacitor C2 and the earth terminal successively of diode D2, described resistance R5 is connected in parallel in the two ends of diode D2 and resistance R4, and described resistance R4 is connected with lower switching tube drive singal output by inverting amplifier U2.
Further, the base stage of described triode Q1 is connected with pwm signal input by resistance R1.
Further, the input of described sign-changing amplifier U1 is connected with resistance R8.
Further, the input of described inverting amplifier U2 is connected with resistance R9.
Further, described positive signal source is connected to the collector electrode of triode Q1 by resistance R3.
Further, resistance R2 is connected with between the base stage of described triode Q1 and emitter.
Further, described triode Q1 is NPN type triode Q1.
The beneficial effects of the utility model are:
1. increase the Dead Time of drive singal from hardware circuit, eliminate some low precision controlling chips, because of Power MOSFET inaccuracy, unstable impact is caused on product;
2. realize only needing control chip PWM output signal just can realize two-tube driving, reduce product to the requirement of control chip PWM resource.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and example, the utility model is described in further detail.
Fig. 1 is circuit theory diagrams of the present utility model.
Embodiment
With reference to Fig. 1; a kind of high accuracy semi-bridge inversion Drive Protecting Circuit of the present utility model; the upper switch tube driving circuit comprising pwm signal input and be connected with pwm signal input and lower switch tube driving circuit; from pwm signal input input inversion pwm signal; it is continuous print low and high level composition; then export the signal driving upper IGBT switching tube in half-bridge inversion circuit through upper switch tube driving circuit, lower switch tube driving circuit exports the signal driving lower IGBT switching tube in half-bridge inversion circuit.
Particularly, described upper switch tube driving circuit comprises diode D1, resistance R6, filter capacitor C1, resistance R7, the negative pole of described diode D1 connects pwm signal input, positive pole is contact resistance R6, filter capacitor C1 and earth terminal GND successively, described resistance R7 is connected in parallel in the two ends of diode D1 and resistance R6, and described resistance R6 is connected with upper switching tube drive singal output by resistance R8, sign-changing amplifier U1 successively.
Particularly, described lower switch driving circuit comprises NPN type triode Q1, diode D2, filter capacitor C2, resistance R4, resistance R5, the base stage of described triode Q1 connects pwm signal input by resistance R1, emitter connects earth terminal GND, and collector electrode is connected with positive signal source+5CV by resistance R3.Resistance R2 is connected with between the base stage of described triode Q1 and emitter, the negative pole of diode D2 is connected with the collector electrode of triode Q1, positive pole contact resistance R4, filter capacitor C2 and the earth terminal GND successively of diode D2, described resistance R5 is connected in parallel in the two ends of diode D2 and resistance R4, and described resistance R4 is connected with lower switching tube drive singal output by resistance R9, inverting amplifier U2 successively.
Operation principle of the present utility model is as follows:
When inversion pwm signal is high level, in upper switch driving circuit, because diode D1 is reverse biased, so high level signal can only through resistance R7, electric capacity C1 filtering, arrive resistance R8, then through sign-changing amplifier U1, obtain an exaggerated low level signal, upper IGBT switching tube cut-off, in the present embodiment, resistance R7 is adopted as the resistance of 3K Ω, and electric capacity C1 adopts the electric capacity of 102F, is t=R7*C1=3us by can be calculated the delay time of upper switching tube drive singal INV.PWM+, in lower switch driving circuit, high level is through resistance R1, drive the base stage of triode Q1, make collector electrode and the emitter conducting of triode Q1, the now collector electrode of triode Q1 conducting over the ground, therefore diode D2 forward conduction, the high level pwm signal inputted is made to be converted to low level, low level signal is through diode D2, resistance R4, electric capacity C2 filtering, arrive resistance R9, then through sign-changing amplifier U2, obtain an exaggerated high level signal, the conducting of lower IGBT switching tube, wherein resistance R4 adopts the resistance of 330 Ω, electric capacity C2 adopts the electric capacity of 102F, be t=R4*C2=0.3us by can be calculated the delay time of lower switching tube drive singal INV.PWM-.As known from the above, when inversion pwm signal is input as high level, INV.PWM+ is the delay of 3us low resistance state, and INV.PWM-lasts the high-impedance state of about 0.3us, realizes the Dead Time of about 2.7us thus.
When inversion pwm signal is low level, due to diode D1 forward conduction, so low level signal can only through resistance R6, electric capacity C1 filtering, arrive resistance R8, then through sign-changing amplifier U1, an exaggerated high level signal INV.PWM+ is obtained, upper pipe IGBT conducting.Resistance R6 adopts the resistance of 330 Ω, and electric capacity C1 adopts the electric capacity of 102F, is t=R6*C1=0.3us by can be calculated the delay time of upper switching tube drive singal INV.PWM+, in lower switch driving circuit, low level is through resistance R1, the base stage of triode Q1 cannot be driven, the collector electrode of triode Q1 and emitter not conducting, now, + 5CV power supply arrives the collector electrode of triode Q1 through resistance R3, diode D2 is reverse biased, so+5CV high level signal can only through resistance R1, resistance R5, electric capacity C2 filtering, arrive resistance R9, then through sign-changing amplifier U2, obtain an exaggerated low level signal INV.PWM-, lower IGBT switching tube cut-off, wherein resistance R1 adopts the resistance of 1K Ω, resistance R5 adopts the resistance of 2K Ω, electric capacity C1 adopts the electric capacity of 102F, be t=(R1+R5) * C2=3us by calculating the delay time of lower switching drive signal INV.PWM-.As known from the above, when pwm signal is input as low level, INV.PWM+ is the delay of 0.3us high-impedance state, and INV.PWM-lasts the low resistance state of about 3us, realizes the Dead Time of about 2.7us thus.
By above two kinds of working methods, just achieve the alternate conduction of upper and lower two IGBT switching tubes in half-bridge inversion circuit, and achieve the Dead Time of 2.7us, prevent inversion drive because of while conducting and cause the damage of inversion pipe, ensure that the stability of inverter circuit work.In addition; above Drive Protecting Circuit only needs control chip PWM to drive resource just can realize two-tube driving; the inverse changing driving circuit comparing existing market needs two PWM of control chip to drive resource, this reduces the requirement of product to control chip PWM resource.
Need further illustrate, by the resistance of resistance and the capacitance of electric capacity in adjustment the utility model circuit, can realize the change of Dead Time, therefore the utility model does not do specific requirement to the resistance of resistance each in circuit and the capacitance of each electric capacity.
The above, just preferred embodiment of the present utility model, the utility model is not limited to above-mentioned execution mode, as long as it reaches technique effect of the present utility model with identical means, all should belong to protection range of the present utility model.
Claims (7)
1. a high accuracy semi-bridge inversion Drive Protecting Circuit, is characterized in that: comprise pwm signal input and the upper switch tube driving circuit that is connected with pwm signal input and lower switch tube driving circuit;
Described upper switch tube driving circuit comprises diode D1, resistance R6, filter capacitor C1, resistance R7, the negative pole of described diode D1 connects pwm signal input, positive pole is contact resistance R6, filter capacitor C1 and earth terminal successively, described resistance R7 is connected in parallel in the two ends of diode D1 and resistance R6, and described resistance R6 is connected with upper switching tube drive singal output by sign-changing amplifier U1;
Described lower switch driving circuit comprises triode Q1, diode D2, filter capacitor C2, resistance R4, resistance R5, the base stage of described triode Q1 connects pwm signal input, emitter connects earth terminal, collector electrode is connected with positive signal source, the negative pole of diode D2 is connected with the collector electrode of triode Q1, positive pole contact resistance R4, filter capacitor C2 and the earth terminal successively of diode D2, described resistance R5 is connected in parallel in the two ends of diode D2 and resistance R4, and described resistance R4 is connected with lower switching tube drive singal output by inverting amplifier U2.
2. a kind of high accuracy semi-bridge inversion Drive Protecting Circuit according to claim 1, is characterized in that: the base stage of described triode Q1 is connected with pwm signal input by resistance R1.
3. a kind of high accuracy semi-bridge inversion Drive Protecting Circuit according to claim 1, is characterized in that: the input of described sign-changing amplifier U1 is connected with resistance R8.
4. a kind of high accuracy semi-bridge inversion Drive Protecting Circuit according to claim 1, is characterized in that: the input of described inverting amplifier U2 is connected with resistance R9.
5. a kind of high accuracy semi-bridge inversion Drive Protecting Circuit according to claim 1, is characterized in that: described positive signal source is connected to the collector electrode of triode Q1 by resistance R3.
6. a kind of high accuracy semi-bridge inversion Drive Protecting Circuit according to claim 1, is characterized in that: be connected with resistance R2 between the base stage of described triode Q1 and emitter.
7. a kind of high accuracy semi-bridge inversion Drive Protecting Circuit according to claim 1, is characterized in that: described triode Q1 is NPN type triode Q1.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420552812.2U CN204168179U (en) | 2014-09-24 | 2014-09-24 | A kind of high accuracy semi-bridge inversion Drive Protecting Circuit |
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| CN201420552812.2U CN204168179U (en) | 2014-09-24 | 2014-09-24 | A kind of high accuracy semi-bridge inversion Drive Protecting Circuit |
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| CN204168179U true CN204168179U (en) | 2015-02-18 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994634A (en) * | 2017-12-07 | 2018-05-04 | 江苏博强新能源科技股份有限公司 | Waveform-based delay current-limiting controller and use method thereof |
| CN109546867A (en) * | 2018-12-24 | 2019-03-29 | 佛山职业技术学院 | A kind of high frequency electric source generator |
| WO2020238306A1 (en) * | 2019-05-30 | 2020-12-03 | 深圳可立克科技股份有限公司 | Dc-ac inverter protection circuit for lithium battery and energy storage device |
-
2014
- 2014-09-24 CN CN201420552812.2U patent/CN204168179U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994634A (en) * | 2017-12-07 | 2018-05-04 | 江苏博强新能源科技股份有限公司 | Waveform-based delay current-limiting controller and use method thereof |
| CN109546867A (en) * | 2018-12-24 | 2019-03-29 | 佛山职业技术学院 | A kind of high frequency electric source generator |
| WO2020238306A1 (en) * | 2019-05-30 | 2020-12-03 | 深圳可立克科技股份有限公司 | Dc-ac inverter protection circuit for lithium battery and energy storage device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Foshan Huabao Power Equipment Co., Ltd. Assignor: Sunshine & Cell Power System Equipment Co. Ltd. Contract record no.: 2019440000028 Denomination of utility model: High-precision half-bridge inversion driving protection circuit Granted publication date: 20150218 License type: Exclusive License Record date: 20190130 |
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| EE01 | Entry into force of recordation of patent licensing contract | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20190723 Granted publication date: 20150218 |
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Date of cancellation: 20210331 Granted publication date: 20150218 |
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| TR01 | Transfer of patent right |
Effective date of registration: 20210513 Address after: 528000 floor 1-5, block 6, 115 Zhangcha 1st Road, Chancheng District, Foshan City, Guangdong Province Patentee after: Foshan Huabao Power Equipment Co.,Ltd. Address before: 528000 Guangdong province Foshan city Chancheng District Zhangcha Industrial Park West 3 Lang Foxi knitting Road 8 3 floor Patentee before: SUNSHINE & CELL POWER SYSTEM EQUIPMENT Co.,Ltd. |
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| TR01 | Transfer of patent right |