CN204144268U - There is the power device of electrostatic preventing structure - Google Patents
There is the power device of electrostatic preventing structure Download PDFInfo
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- CN204144268U CN204144268U CN201420632706.5U CN201420632706U CN204144268U CN 204144268 U CN204144268 U CN 204144268U CN 201420632706 U CN201420632706 U CN 201420632706U CN 204144268 U CN204144268 U CN 204144268U
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Abstract
The utility model discloses a kind of power device with electrostatic preventing structure; comprise: drift layer, drain region, drain electrode, P-doped region, a N+ doped region, P+ doped region, the first dielectric film, the second dielectric film, polysilicon layer, grid, electrostatic protection layer, the 3rd dielectric film, source electrode, electrostatic attraction electrode and conductor layer; described electrostatic protection layer comprises several 2nd P-doped region and several 2nd N+ doped region, and described several 2nd P-doped region and several 2nd N+ doped region are alternately.The utility model is by arranging several P-doped region alternately and the 2nd N+ doped region in inside; to form one electrostatic protection layer-zener diode structure; so just can remove the space that electrostatic safety circuit etc. is shared in power supply module; without the need to arranging electrostatic preventing structure in addition again; improve the space efficiency of power supply module; reduce wiring quantity and some parasitic parameters, realize highly efficient power device.
Description
Technical field
The utility model relates to technical field of semiconductor device, particularly relates to a kind of power device with electrostatic preventing structure.
Background technology
The material of conductivity between conductor and insulator is semiconductor, utilize the electronic device of semi-conducting material manufacturing to have special conductive characteristic because of it, thus be widely used in the field such as consumer electronics, computer and peripheral hardware thereof, communication, power supply electrical equipment.Power device is a kind of electronic device by semi-conducting material manufacturing, and it is mainly used in the device as Power Processing in circuit, and as shown in Figure 1, it is the structural representation of existing power device.
Usually on the integrated, diode clipper (Diode Limiter) can be used, and adopt bypass to carry out the mode of release electrostatic to carry out electrostatic (ESD) protection.And power device is a discrete device; diode will be added separately in encapsulating structure inside or built-in electrostatic safety circuit on control integration circuit to carry out electrostatic protection; to realize the object of electrostatic protection; but; power supply module will be made like this to minimize; and wiring (Wiring) and some parasitic parameters can be increased, be difficult to realize efficient power supply module.
Therefore, prior art existing defects, needs to improve.
Utility model content
The purpose of this utility model is to provide a kind of power device with electrostatic preventing structure; its inside is provided with electrostatic protection layer-zener diode structure; again electrostatic preventing structure need not be set in addition; improve the space efficiency of power supply module; reduce wiring quantity and some parasitic parameters simultaneously, realize highly efficient power device.
The technical solution of the utility model is as follows: the utility model provides a kind of power device with electrostatic preventing structure, comprise: drift layer, be formed at the drain region below described drift layer, be formed at the drain electrode below described drain region, be formed at the P-doped region in described drift layer, be formed at the N+ doped region in described drift layer, be formed at the P+ doped region in described drift layer, be formed at the first dielectric film on described drift layer, be formed at described drift layer, the second dielectric film on one P-doped region and a N+ doped region, be formed at described first, polysilicon layer on second dielectric film, be formed at the grid on described second dielectric film, be formed at the electrostatic protection layer on described first dielectric film, be formed at described grid, one N+ doped region, the 3rd dielectric film in polysilicon layer and electrostatic protection layer, be formed at the source electrode on described P+ doped region and a N+ doped region, be formed at the electrostatic attraction electrode on described polysilicon layer, and be formed at described source electrode, conductor layer on 3rd insulating barrier and electrostatic attraction electrode, described electrostatic protection layer comprises several 2nd P-doped region and several 2nd N+ doped region, and described several 2nd P-doped region and several 2nd N+ doped region are alternately.
Described electrostatic protection layer is formed respectively through P+ doping process and N+ doping process by polysilicon layer.
Described electrostatic protection layer comprises four the 2nd N+ doped regions and three the 2nd P-doped regions, and described four the 2nd N+ doped regions and three the 2nd P-doped regions are alternately.
The thickness of described first dielectric film is greater than the thickness of described second dielectric film.
The material of described first dielectric film is silicon dioxide, silicon oxynitride or hafnium oxide, the material of described second dielectric film is silicon dioxide, silicon oxynitride or hafnium oxide, the material of described 3rd insulating barrier is phosphosilicate glass, the silicate glass of Fluorin doped or boron-phosphorosilicate glass, described drift layer is N-type drift layer, and described drift layer comprises the first drift layer and is formed at the second drift layer on described first drift layer.
Adopt such scheme, the power device with electrostatic preventing structure of the present utility model, by arranging several P-doped region alternately and the 2nd N+ doped region in inside, to form one electrostatic protection layer-zener diode structure, so just can removing the space that electrostatic safety circuit etc. is shared in power supply module, without the need to arranging electrostatic preventing structure more in addition, improving the space efficiency of power supply module, reduce wiring quantity and some parasitic parameters, realize highly efficient power device; And this manufacture craft with the power device of electrostatic preventing structure is simple, compared with existing power device manufacture craft, without the need to additional technological process, can not increase into product cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of power device in prior art.
Fig. 2 is the structural representation that the utility model has the power device of electrostatic preventing structure.
Fig. 3 is the equivalent circuit diagram that the utility model has the power device of electrostatic preventing structure.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in detail.
Refer to Fig. 3, the utility model provides a kind of power device with electrostatic preventing structure, comprise: drift layer 2, be formed at the drain region 5 below described drift layer 2, be formed at the drain electrode 6 below described drain region 5, be formed at the P-doped region 11 in described drift layer 2, be formed at the N+ doped region 13 in described drift layer 2, be formed at the P+ doped region 14 in described drift layer 2, be formed at the first dielectric film 31 on described drift layer 2, be formed at described drift layer 2, the second dielectric film 32 on one P-doped region 11 and a N+ doped region 14, be formed at described first, second dielectric film 31, polysilicon layer 33 on 32, be formed at the grid 34 on described second dielectric film 32, be formed at the electrostatic protection layer 3 on described first dielectric film 31, be formed at described grid 34, one N+ doped region 13, the 3rd dielectric film 4 in polysilicon layer 33 and electrostatic protection layer 3, be formed at the source electrode 35 on described P+ doped region 13 and a N+ doped region 14, be formed at the electrostatic attraction electrode 36 on described polysilicon layer 33, and be formed at described source electrode 35, conductor layer 37 on 3rd insulating barrier 4 and electrostatic attraction electrode 36.Described electrostatic protection layer 3 comprises several 2nd P-doped region 12 and several 2nd N+ doped region 15; described several 2nd P-doped region 12 and several 2nd N+ doped region 15 are alternately; to form zener diode structure; play electrostatic protective function; as shown in figure 15; part A plays the major function of original power device, and part B then plays electrostatic protection function.
Described electrostatic protection layer 3 is formed respectively through P+ doping process and N+ doping process by polysilicon layer.In the present embodiment, described electrostatic protection layer 3 comprises four the 2nd N+ doped regions 15 and three the 2nd P-doped regions 12, and described four the 2nd N+ doped regions 15 and three the 2nd P-doped regions 12 alternately, form PNPNPN diode structure.
Described first to the 3rd dielectric film 31,32,4 first by diffusion technology or chemical vapour deposition technique (CVD) deposition, then is covered technique (Photo Masking) and dry quarter or wet-etching technique by photosensitive and formed.Described first dielectric film 31 has different thickness from the second dielectric film 32, and preferably, the thickness of described first dielectric film 31 is greater than the thickness of described second dielectric film 32.The material of described first dielectric film 31 is silicon dioxide (SiO
2), silicon oxynitride (SiON) or hafnium oxide (HFO), the material of described second dielectric film 32 is silicon dioxide, silicon oxynitride or hafnium oxide, and the material of described 3rd insulating barrier 4 is phosphosilicate glass, the silicate glass of Fluorin doped or boron-phosphorosilicate glass.Described drift layer 2 is N-type drift layer, and in the present embodiment, described drift layer 2 comprises the first drift layer 21 and is formed at the second drift layer 22 on described first drift layer 21, and described second drift layer 22 is formed by doping N-ion, to form JFET field.
Refer to Fig. 3; C part in Fig. 3 is equivalent to the part B in Fig. 2; D part is equivalent to the part A in Fig. 2; what the utility model provided has in the power device of esd protection structure; the source electrode realizing original power device main functional parts and the electrostatic attraction electrode realizing electrostatic protection function part link together, and the grid realizing original power device main functional parts and the other end realizing electrostatic protection function part link together.
It is worth mentioning that: the electrostatic protection layer 3 with the power device Inner Constitution of esd protection structure can not fabrication processing, namely just can realize without the need to additional process engineering in production procedure.
In sum, the utility model provides a kind of power device with electrostatic preventing structure, by arranging several P-doped region alternately and the 2nd N+ doped region in inside, to form one electrostatic protection layer-zener diode structure, so just can remove the space that electrostatic safety circuit etc. is shared in power supply module, without the need to arranging electrostatic preventing structure in addition again, improve the space efficiency of power supply module, reduce wiring quantity and some parasitic parameters, realize highly efficient power device, and this manufacture craft with the power device of electrostatic preventing structure is simple, compared with existing power device manufacture craft, without the need to additional technological process, product cost can not be increased into.
These are only preferred embodiment of the present utility model, be not limited to the utility model, all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (5)
1. one kind has the power device of electrostatic preventing structure, it is characterized in that, comprise: drift layer, be formed at the drain region below described drift layer, be formed at the drain electrode below described drain region, be formed at the P-doped region in described drift layer, be formed at the N+ doped region in described drift layer, be formed at the P+ doped region in described drift layer, be formed at the first dielectric film on described drift layer, be formed at described drift layer, the second dielectric film on one P-doped region and a N+ doped region, be formed at described first, polysilicon layer on second dielectric film, be formed at the grid on described second dielectric film, be formed at the electrostatic protection layer on described first dielectric film, be formed at described grid, one N+ doped region, the 3rd dielectric film in polysilicon layer and electrostatic protection layer, be formed at the source electrode on described P+ doped region and a N+ doped region, be formed at the electrostatic attraction electrode on described polysilicon layer, and be formed at described source electrode, conductor layer on 3rd insulating barrier and electrostatic attraction electrode, described electrostatic protection layer comprises several 2nd P-doped region and several 2nd N+ doped region, and described several 2nd P-doped region and several 2nd N+ doped region are alternately.
2. the power device with electrostatic preventing structure according to claim 1, is characterized in that, described electrostatic protection layer is formed respectively through P+ doping process and N+ doping process by polysilicon layer.
3. the power device with electrostatic preventing structure according to claim 1; it is characterized in that; described electrostatic protection layer comprises four the 2nd N+ doped regions and three the 2nd P-doped regions, and described four the 2nd N+ doped regions and three the 2nd P-doped regions are alternately.
4. the power device with electrostatic preventing structure according to claim 1, is characterized in that, the thickness of described first dielectric film is greater than the thickness of described second dielectric film.
5. the power device with electrostatic preventing structure according to claim 1; it is characterized in that; the material of described first dielectric film is silicon dioxide, silicon oxynitride or hafnium oxide; the material of described second dielectric film is silicon dioxide, silicon oxynitride or hafnium oxide; the material of described 3rd insulating barrier is phosphosilicate glass, the silicate glass of Fluorin doped or boron-phosphorosilicate glass; described drift layer is N-type drift layer, and described drift layer comprises the first drift layer and is formed at the second drift layer on described first drift layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420632706.5U CN204144268U (en) | 2014-10-29 | 2014-10-29 | There is the power device of electrostatic preventing structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420632706.5U CN204144268U (en) | 2014-10-29 | 2014-10-29 | There is the power device of electrostatic preventing structure |
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| CN204144268U true CN204144268U (en) | 2015-02-04 |
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| CN201420632706.5U Expired - Fee Related CN204144268U (en) | 2014-10-29 | 2014-10-29 | There is the power device of electrostatic preventing structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300000A (en) * | 2014-10-29 | 2015-01-21 | 深圳市可易亚半导体科技有限公司 | Power device with electrostatic protection structure and manufacturing method thereof |
-
2014
- 2014-10-29 CN CN201420632706.5U patent/CN204144268U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300000A (en) * | 2014-10-29 | 2015-01-21 | 深圳市可易亚半导体科技有限公司 | Power device with electrostatic protection structure and manufacturing method thereof |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150204 Termination date: 20211029 |
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| CF01 | Termination of patent right due to non-payment of annual fee |