CN204118079U - A kind of photoelectric sensor - Google Patents
A kind of photoelectric sensor Download PDFInfo
- Publication number
- CN204118079U CN204118079U CN201420582182.3U CN201420582182U CN204118079U CN 204118079 U CN204118079 U CN 204118079U CN 201420582182 U CN201420582182 U CN 201420582182U CN 204118079 U CN204118079 U CN 204118079U
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- photoelectric sensor
- pin
- semiconductor chip
- glass lens
- negative electrode
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The utility model relates to a kind of photoelectric sensor, comprise shell, described shell bottom is respectively arranged with anode pin, negative electrode pin, described anode pin, negative electrode pin are each passed through ceramic tube seat, semiconductor chip is provided with above described ceramic tube seat, described semiconductor chip is connected with base by lead-in wire, and be provided with glass lens above described semiconductor chip, described glass lens is installed on shell top.The utility model structure is simple, easily encapsulation, cheap for manufacturing cost, opto-electronic conversion is sensitive, stable.
Description
Technical field
The utility model relates to technical field of semiconductors, particularly relates to a kind of photoelectric sensor.
Background technology
Photodiode work principle photodiode is semiconductor device light signal being become the signal of telecommunication.Its core is also a PN junction, compares with general-purpose diode, structurally unlike, for the ease of accepting incident illumination, it is larger that PN junction area does as far as possible, and electrode area is as small as possible, and the junction depth of PN junction is very shallow, is generally less than 1 micron.Photodiode works under reverse voltage effect.When there is no illumination, reverse current very little (being generally less than 0.1 microampere).When there being illumination, after the photon carrying energy enters PN junction, energy being passed to the bound electron on covalent bond, making portions of electronics shake off covalent bond, thus produce electron-hole pair.They participate in drift motion under reverse voltage effect, and make reverse current obviously become large, the intensity of light is larger, and reverse current is also larger.This characteristic is called " photoconduction ".
At present, semiconductor photosensor technology has been tending towards perfect, but still there is the problems such as complex structure, manufacturing cost is high, sensitivity is low, adaptive capacity to environment is poor.
Utility model content
Technical problem to be solved in the utility model is to provide the photoelectric sensor that a kind of structure simply, easily encapsulates, cheap for manufacturing cost, opto-electronic conversion is sensitive, stable.
The technical scheme that the utility model solves the problems of the technologies described above is as follows: a kind of photoelectric sensor, comprise shell, described shell bottom is respectively arranged with anode pin, negative electrode pin, described anode pin, negative electrode pin are each passed through ceramic tube seat, semiconductor chip is provided with above described ceramic tube seat, described semiconductor chip is connected with base by lead-in wire, and be provided with glass lens above described semiconductor chip, described glass lens is installed on shell top.
When light enters photoelectric sensor from glass lens, vitalizing semiconductor chip produces photoelectric effect, thus generation photoelectric current, the conversion of the photoelectricity realized, described photoelectric current outputs to external circuit by pin and is exaggerated, and is finally examined, the size of luminous intensity can be measured according to the actual size of photoelectric current, the detection range of photoelectric sensor is corresponding with the light transmission wave-length coverage of glass lens, and described base of ceramic has insulation characterisitic, for the insulation between anode pin, negative electrode pin.
On the basis of technique scheme, the utility model can also do following improvement.
Further, described anode pin, negative electrode pin are copper-plated metal pin, and described copper-plated metal pin intensity is large, is conducive to the support to photoelectric sensor; Good conductivity, resistivity are low, are conducive to reducing the interference to detection signal.
Further, described lead-in wire is copper metal line, and described cylinder metal wire good conductivity, flexible strength are large, effectively in the resistance to usability strengthening photoelectric sensor, extends the useful life of photoelectric sensor.
Further, described shell comprises lens installation structure, and described glass lens is fixed on lens installation structure, and the symmetry that described lens installation structure is used for glass lens is fixed.
Further, described glass lens is epoxy resin material, and the rigid intensity of described epoxide resin material is large, and be conducive to the shock holding capacity strengthening photoelectric sensor, transparent epoxy resin degree is high simultaneously, is conducive to entering of light.
The beneficial effects of the utility model are: structure is simple, easily encapsulation, cheap for manufacturing cost, opto-electronic conversion is sensitive, stable.
Accompanying drawing explanation
Fig. 1 is a kind of photosensor structure schematic diagram of the utility model;
In accompanying drawing, the list of parts representated by each label is as follows: 1, shell, and 2, semiconductor chip, 3, glass lens, 4, lens installation structure, 5, lead-in wire, 6, anode pin, 7, negative electrode pin, 8, ceramic tube seat.
Embodiment
Be described principle of the present utility model and feature below in conjunction with accompanying drawing, example, only for explaining the utility model, is not intended to limit scope of the present utility model.
As shown in Figure 1, a kind of photoelectric sensor, comprise shell 1, described shell 1 bottom is respectively arranged with anode pin 6, negative electrode pin 7, described anode pin 6, negative electrode pin 7 are each passed through ceramic tube seat 8, are provided with semiconductor chip 2 above described ceramic tube seat 8, and described semiconductor chip 2 is connected with ceramic tube seat 8 by lead-in wire 5, be provided with glass lens 3 above described semiconductor chip 2, described glass lens 3 is installed on shell 1 top.
When light enters photoelectric sensor from glass lens 3, vitalizing semiconductor chip 2 produces photoelectric effect, thus generation photoelectric current, the conversion of the photoelectricity realized, described photoelectric current outputs to external circuit by pin and is exaggerated, and is finally examined, the size of luminous intensity can be measured according to the actual size of photoelectric current, the detection range of photoelectric sensor is corresponding with the light transmission wave-length coverage of glass lens 3, and described base of ceramic 8 has insulation characterisitic, for the insulation between anode pin 6, negative electrode pin 7.
Described anode pin 6, negative electrode pin 7 are copper-plated metal pin, and described copper-plated metal pin intensity is large, is conducive to the support to photoelectric sensor; Good conductivity, resistivity are low, are conducive to reducing the interference to detection signal; Described lead-in wire 5 is copper metal line, and described cylinder metal wire good conductivity, flexible strength are large, effectively in the resistance to usability strengthening photoelectric sensor, extends the useful life of photoelectric sensor; Described shell 1 comprises lens installation structure 4, and described glass lens 3 is fixed on lens installation structure 4, and described lens installation structure 4 is fixed for the symmetry of glass lens 3; Described glass lens 3 is epoxy resin material, and the rigid intensity of described epoxide resin material is large, and be conducive to the shock holding capacity strengthening photoelectric sensor, transparent epoxy resin degree is high simultaneously, is conducive to entering of light.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (5)
1. a photoelectric sensor, it is characterized in that, comprise shell, described shell bottom is respectively arranged with anode pin, negative electrode pin, described anode pin, negative electrode pin are each passed through ceramic tube seat, are provided with semiconductor chip above described ceramic tube seat, and described semiconductor chip is connected with base by lead-in wire, be provided with glass lens above described semiconductor chip, described glass lens is installed on shell top.
2. a kind of photoelectric sensor according to claim 1, it is characterized in that, described anode pin, negative electrode pin are copper-plated metal pin.
3. a kind of photoelectric sensor according to claim 1, it is characterized in that, described lead-in wire is copper metal line.
4. a kind of photoelectric sensor according to claim 1, it is characterized in that, described shell comprises lens installation structure, and described glass lens is fixed on lens installation structure.
5. a kind of photoelectric sensor according to claim 1, it is characterized in that, described glass lens is epoxy resin material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420582182.3U CN204118079U (en) | 2014-09-30 | 2014-09-30 | A kind of photoelectric sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420582182.3U CN204118079U (en) | 2014-09-30 | 2014-09-30 | A kind of photoelectric sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204118079U true CN204118079U (en) | 2015-01-21 |
Family
ID=52335366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420582182.3U Expired - Fee Related CN204118079U (en) | 2014-09-30 | 2014-09-30 | A kind of photoelectric sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204118079U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104958078A (en) * | 2015-07-14 | 2015-10-07 | 广州光微健康科技有限公司 | Multi-element photoelectric sensor |
| CN104990038A (en) * | 2015-07-14 | 2015-10-21 | 广州光微健康科技有限公司 | Multi-wavelength light source |
-
2014
- 2014-09-30 CN CN201420582182.3U patent/CN204118079U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104958078A (en) * | 2015-07-14 | 2015-10-07 | 广州光微健康科技有限公司 | Multi-element photoelectric sensor |
| CN104990038A (en) * | 2015-07-14 | 2015-10-21 | 广州光微健康科技有限公司 | Multi-wavelength light source |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150121 Termination date: 20150930 |
|
| EXPY | Termination of patent right or utility model |