CN204103794U - Power subelement, three-phase MMC topological structure and converter - Google Patents
Power subelement, three-phase MMC topological structure and converter Download PDFInfo
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- CN204103794U CN204103794U CN201420336146.9U CN201420336146U CN204103794U CN 204103794 U CN204103794 U CN 204103794U CN 201420336146 U CN201420336146 U CN 201420336146U CN 204103794 U CN204103794 U CN 204103794U
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Abstract
The utility model provides a kind of power subelement, and it comprises submodule that n connects successively and the thyristor V1 with this n submodule reverse parallel connection, and n be more than or equal to 3 integer, submodule i comprises insulated gate bipolar transistor Ti1 and the diode Di1 with its reverse parallel connection, insulated gate bipolar transistor Ti2 and the diode Di2 with its reverse parallel connection, electric capacity Ci and K switch i, the collector electrode of insulated gate bipolar transistor Ti1 is connected with one end of electric capacity Ci, emitter is connected with the collector electrode of insulated gate bipolar transistor Ti2, the emitter of insulated gate bipolar transistor Ti2 is connected with the other end of electric capacity Ci, the two ends of K switch i are connected with the collector and emitter of insulated gate bipolar transistor Ti2 respectively, and i gets 1 successively, 2, ..., n.Correspondingly, a kind of three-phase MMC topological structure and converter is provided.Power subelement described in the utility model cheap and structure is simple.
Description
Technical field
The utility model relates to Technology of HVDC based Voltage Source Converter field, is specifically related to a kind of power subelement, three-phase MMC topological structure and converter for forming MMC topological structure.
Background technology
In Technology of HVDC based Voltage Source Converter field, adopt voltage source converter (VSC, Voltage Source Converter) flexible direct current power transmission system can control transmitted galvanic active power and reactive power independently, rapidly, significantly enhance the flexibility of direct current transportation, and become feasible region Power System Interconnection, Large Scale Wind Farm Integration and exchange the light current net stable electric power transfer mode of being potential most connect respectively and between major network.Along with the development of power electronic technology, high voltage, jumbo converter become the nucleus equipment of flexible direct current power transmission system, its topological structure can be divided into two level topological structures, three-level topology structure and MMC (Modular Multilevel Converter, i.e. modularization multi-level converter) topological structure etc.Wherein, MMC topological structure, because possessing the advantages such as switching frequency is low, loss is little, is widely used in DC transmission system.
At present, the submodule for forming MMC topological structure mainly contains H-MMC (half-bridge submodule), F-MMC (full-bridge submodule) and C-MMC (clamp Shuangzi module) three kinds.Wherein, the half-bridge submodule advantages such as structure is simple, power device is few because having, control algolithm is easy to realize, the little and system effectiveness of loss is high are used widely in the converter adopting MMC topological structure.As shown in Figure 1, existing half-bridge submodule comprises insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor) T1 and with diode D1, the insulated gate bipolar transistor T2 of its reverse parallel connection and the diode D2 with its reverse parallel connection, with electric capacity C1, the collector electrode of insulated gate bipolar transistor T1 is connected with one end of electric capacity C1, the emitter of insulated gate bipolar transistor T1 is connected with the collector electrode of insulated gate bipolar transistor T2, and the emitter of insulated gate bipolar transistor T2 is connected with the other end of electric capacity C1.Based on half-bridge submodule converter occur DC bus phase fault time; not there is the ability of self-cleaning short circuit current fault; in order to address this problem; need to access thyristor V0 in each half-bridge submodule; particularly; between the collector and emitter of the insulated gate bipolar transistor T2 of each half-bridge submodule, access thyristor V0, thus triggering and conducting thyristor V0 carries out afterflow when there is DC bus phase fault, the safety of protection power device.
But the thyristor V0 accessed in each half-bridge submodule cannot adopt general power device, can only adopt the power device of special manufacture.This is because, the conducting voltage of general thyristor is higher than the conduction voltage drop of the diode with insulated gate bipolar transistor reverse parallel connection, when DC bus generation phase fault, short circuit current can the first moment from the diode D2 of insulated gate bipolar transistor T2 reverse parallel connection flow through, can make the voltage clamping at thyristor V0 two ends after diode D2 conducting in 1 ~ 2 volt voltage range, in this case, thyristor V0 cannot be triggered conducting carry out the afterflow of short circuit current; Simultaneously, because short circuit current is very large, when short circuit current flows through diode D2, the insulated gate bipolar transistor T2 with diode D2 reverse parallel connection can be burnt out within very short time, thus cause the loss of power device, bring great risk to the stability of flexible direct current power transmission system.But the thyristor of current special manufacture expensive, is equivalent to 3 ~ 4 times of the general thyristor of equal voltage and power grade, makes to adopt the cost of the converter of MMC topological structure high.Therefore, how to reduce the cost of the converter adopting MMC topological structure, become one of this area problem demanding prompt solution.
Utility model content
Technical problem to be solved in the utility model is for above-mentioned defect existing in prior art, there is provided a kind of can realize the afterflow of short circuit current while, can reduce costs to a great extent again for forming the power subelement of MMC topological structure, three-phase MMC topological structure and converter.
The technical scheme that solution the utility model technical problem adopts is:
Described power subelement is for forming MMC topological structure, and it comprises submodule that n connects successively and the thyristor V1 with this n submodule reverse parallel connection, and n be more than or equal to 3 integer, submodule i comprises insulated gate bipolar transistor Ti1 and the diode Di1 with its reverse parallel connection, insulated gate bipolar transistor Ti2 and the diode Di2 with its reverse parallel connection, electric capacity Ci and K switch i, the collector electrode of insulated gate bipolar transistor Ti1 is connected with one end of electric capacity Ci, the emitter of insulated gate bipolar transistor Ti1 is connected with the collector electrode of insulated gate bipolar transistor Ti2, the emitter of insulated gate bipolar transistor Ti2 is connected with the other end of electric capacity Ci, the two ends of K switch i are connected with the collector and emitter of insulated gate bipolar transistor Ti2 respectively, and i gets 1 successively, 2, ..., n.
Preferably, the collector electrode of the insulated gate bipolar transistor Tj2 of submodule j is connected with the emitter of the insulated gate bipolar transistor T (j-1) 2 of adjacent previous submodule (j-1), the emitter of the insulated gate bipolar transistor Tj2 of submodule j is connected with the collector electrode of the insulated gate bipolar transistor T (j+1) 2 of an adjacent rear submodule (j+1), and j gets 2 successively, 3, ..., (n-1);
The anode of thyristor V1 is connected with the emitter of the insulated gate bipolar transistor Tn2 of the n-th submodule, and negative electrode is connected with the collector electrode of the insulated gate bipolar transistor T12 of the 1st submodule.
Preferably, the quantity n of submodule that described power subelement comprises also needs to meet:
The quantity n of the submodule that described power subelement comprises also needs to meet:
ROUNDUP(U
1/U
2，0)≤n≤ROUNDDOWN(U
3/U
4，0) (1)
In formula (1), U
1for the turn-on voltage of thyristor V1, U
2for the conduction voltage drop value of the diode in each submodule, U
3for the load voltage value of thyristor V1, U
4for the magnitude of voltage of the electric capacity in each submodule.
Or the quantity n of the submodule that described power subelement comprises also needs to meet:
ROUNDUP(U
1/U
2，0)+1≤n≤ROUNDDOWN(U
3/U
4，0) (2)
In formula (2), U
1for the turn-on voltage of thyristor V1, U
2for the conduction voltage drop value of the diode in each submodule, U
3for the load voltage value of thyristor V1, U
4for the magnitude of voltage of the electric capacity in each submodule.
Preferably, described power subelement also comprises thyristor driver controller, and n the submodule that described power subelement comprises all has controller,
Each submodule controller be used for when malfunction being detected output protection signal to thyristor driver controller;
The guard signal that described thyristor driver controller is used for exporting according to each submodule controller judges whether the control end of output drive signal to thyristor V1, thus conducting or cutoff thyristor V1.
Further preferably, when described thyristor driver controller is used for any one or more submodule controller output protection signal in n sub-module controller, output drive signal is to the control end of thyristor V1.
Or described thyristor driver controller is used for when the equal output protection signal of the individual sub-module controller of n, and output drive signal is to the control end of thyristor V1.
Preferably, described thyristor driver controller comprises power supply, logical AND chip circuit, optical coupling isolation circuit and drive amplification circuit,
Described power supply is connected with drive amplification circuit with logical AND chip circuit, optical coupling isolation circuit respectively, for providing electric energy;
Described logical AND chip circuit is connected with n sub-module controller, for receiving the guard signal that n sub-module controller exports, and exports optical coupling isolation circuit to after this n road guard signal is converted to a road available protecting signal;
Described optical coupling isolation circuit exports drive amplification circuit to after being used for carrying out isolated variable to this road available protecting signal;
After described drive amplification circuit is used for carrying out amplifying process to the available protecting signal after isolated variable, output drive signal is to the control end of thyristor V1.
The utility model also provides a kind of three-phase MMC topological structure, comprise three facies units, each facies unit includes brachium pontis and lower brachium pontis, and the upper brachium pontis of each facies unit and lower brachium pontis include the reactor and multiple subelement of connecting successively, and described subelement adopts above-mentioned power subelement.
The utility model also provides a kind of converter, and described converter adopts above-mentioned three-phase MMC topological structure.
Beneficial effect:
Power subelement described in the utility model by after n sub-block coupled in series again with thyristor reverse parallel connection, the diode current flow of connecting in each submodule when making DC bus generation phase fault, the conduction voltage drop value of the diode of these series connection is applied to again the two ends of thyristor simultaneously, make to adopt the thyristor of universal power device also can triggering and conducting rapidly after receiving drive singal, and make most short circuit current from wherein flowing through, thus achieve the afterflow of short circuit current, and then protect IGBT constant power device, therefore with must adopt in prior art special manufacture power device thyristor scheme compared with, while the afterflow that can realize short circuit current, can reduce costs to a great extent again, structure is also fairly simple, be easy to realize.
Accompanying drawing explanation
Fig. 1 is the structural representation that in prior art, half-bridge submodule is connected with thyristor;
Fig. 2 is the structural representation of the utility model embodiment Neutron module;
Fig. 3 is the structural representation of power subelement in the utility model embodiment;
Fig. 4 is the control logic schematic diagram of power subelement in the utility model embodiment;
Fig. 5 is the structural representation of thyristor driver controller in Fig. 4;
Fig. 6 is the schematic diagram of three-phase MMC topological structure in the utility model embodiment.
Embodiment
For making those skilled in the art understand the technical solution of the utility model better, below in conjunction with drawings and Examples, the utility model is described in further detail.
Embodiment:
The present embodiment provides a kind of power subelement, it is for forming MMC topological structure, comprise submodule that n connects successively and with the thyristor V1 of this n submodule reverse parallel connection (namely, after this n sub-block coupled in series again with thyristor V1 reverse parallel connection), and n be more than or equal to 3 integer, submodule i comprises insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor) Ti1 and the diode Di1 with its reverse parallel connection, insulated gate bipolar transistor Ti2 and the diode Di2 with its reverse parallel connection, electric capacity Ci and K switch i, the collector electrode of insulated gate bipolar transistor Ti1 is connected with one end of electric capacity Ci, the emitter of insulated gate bipolar transistor Ti1 is connected with the collector electrode of insulated gate bipolar transistor Ti2, the emitter of insulated gate bipolar transistor Ti2 is connected with the other end of electric capacity Ci, the two ends of K switch i are connected with the collector and emitter of insulated gate bipolar transistor Ti2 respectively, and i gets 1 successively, 2, ..., n.In the present embodiment, described thyristor V1 adopts existing general thyristor, and other power device and electronic component also adopt existing general power device and electronic component respectively, and power subelement comprise all insulated gate bipolar transistors, all diodes, all electric capacity and all switches structure and parameters identical respectively.
In order to realize the series connection of this n submodule, as shown in Figure 2, each submodule i also comprises two-way independently power outlet terminal, be respectively the power outlet terminal Ai1 be connected with the collector electrode of insulated gate bipolar transistor Ti2 and the power outlet terminal Ai2 be connected with the emitter of insulated gate bipolar transistor Ti2, and the power outlet terminal Ai2 of submodule i is connected with the power outlet terminal A (i+1) 1 of an adjacent rear submodule (i+1), i gets 1 successively, 2, ..., n, thus form the power subelement shown in Fig. 3.
Particularly, as shown in Figure 3, the collector electrode of the insulated gate bipolar transistor Tj2 of submodule j is connected with the emitter of the insulated gate bipolar transistor T (j-1) 2 of adjacent previous submodule (j-1), the emitter of the insulated gate bipolar transistor Tj2 of submodule j is connected with the collector electrode of the insulated gate bipolar transistor T (j+1) 2 of an adjacent rear submodule (j+1), and j gets 2 successively, 3, ..., (n-1), such as, the collector electrode of the insulated gate bipolar transistor T22 of submodule 2 is connected with the emitter of the insulated gate bipolar transistor T12 of adjacent previous submodule 1, the emitter of the insulated gate bipolar transistor T22 of submodule 2 is connected with the collector electrode of the insulated gate bipolar transistor T32 of an adjacent rear submodule 3 (not shown in Fig. 3), by that analogy,
The anode of thyristor V1 is connected with the emitter of the insulated gate bipolar transistor Tn2 of the n-th submodule, and negative electrode is connected with the collector electrode of the insulated gate bipolar transistor T12 of the 1st submodule.
In order to make thyristor V1 be easier to conducting when DC bus generation phase fault, preferably, the quantity n of the submodule that described power subelement comprises also needs to meet:
ROUNDUP(U
1/U
2，0)≤n≤ROUNDDOWN(U
3/U
4，0) (1)
In formula (1), U
1for the turn-on voltage of thyristor V1, U
2for the conduction voltage drop value of the diode in each submodule, U
3for the load voltage value of thyristor V1, U
4for the magnitude of voltage of the electric capacity in each submodule.
It should be noted that, ROUNDUP (number, num_digits) function for being rounded up to function, for away from null value, be rounded up to numeral, wherein, Number is any real number needing to be rounded up to, and Num_digits is the decimal digits of the numeral after rounding off, as Num_digits=0, represent and be rounded up to immediate integer, such as, if U
1=7V, U
2=2V, then ROUNDUP (U
1/ U
2, 0) and=ROUNDUP (3.5,0)=4;
ROUNDDOWN (number, num_digits) function is downward round-off function, for close null value, round off downwards numeral, wherein, Number needs any real number to round down, Num_digits is the decimal digits of the numeral after rounding off, and as Num_digits=0, represents and is rounded down to immediate integer, such as, if U
3=750V, U
4=4V, then ROUND DOWN (U
3/ U
4, 0) and=ROUND DOWN (187.5,0)=187.
Usually, the turn-on voltage U of thyristor V1 (i.e. existing general thyristor)
1span be 5 ~ 10V, the conduction voltage drop value U of the diode (i.e. existing general purpose diode) in each submodule
2span be 1 ~ 2V, visible, when the conduction voltage drop of single diode is applied to existing general thyristor two ends (scheme of prior art), even if the control end of thyristor receives drive singal (also can be described as triggering and conducting signal), also cannot conducting carry out the afterflow of short circuit current.And in the present embodiment, if with the model of thyristor V1 for SKT491, the model of IGBT is IKW75N60T is example (IGBT of this model carries the diode of reverse parallel connection), known by data query handbook, the turn-on voltage U of thyristor V1
1=5V, with the conduction voltage drop value U of the diode of IGBT reverse parallel connection
2=2V, then can calculate n>=ROUNDUP (U according to formula (1)
1/ U
2, 0)=ROUNDUP (2.5, 0)=3, that is, each subelement at least comprises 3 submodules, if get n=3, then after these 3 sub-block coupled in series again with thyristor V1 reverse parallel connection, after diode Di2 in each submodule is connected successively again with thyristor V1 reverse parallel connection, then when DC bus generation phase fault, diode Di2 series connection conducting in each submodule, its conduction voltage drop sum is applied to the two ends of thyristor V1, namely 6V is applied to the two ends of thyristor V1, be greater than the turn-on voltage 5V of thyristor V1, make the control end of thyristor V1 can fast conducting after receiving drive singal, thus carry out the afterflow of short circuit current, and make most short circuit current from wherein flowing through, and then protect IGBT constant power device.
In addition, in order to increase the conducting voltage allowance of thyristor V1, improve the reliability of design, the basis of the minimum value of the submodule quantity (i.e. n value) drawn at formula (1) increases a submodule again, that is, the quantity n of submodule that described power subelement comprises also needs to meet:
ROUNDUP(U
1/U
2，0)+1≤n≤ROUNDDOWN(U
3/U
4，0) (2)
In formula (2), U
1for the turn-on voltage of thyristor V1, U
2for the conduction voltage drop value of the diode in each submodule, U
3for the load voltage value of thyristor V1, U
4for the magnitude of voltage of the electric capacity in each submodule.
In addition, in order to realize the driving of thyristor V1, as shown in Figure 4, described power subelement also comprises thyristor driver controller, n the submodule that described power subelement comprises all has controller, each submodule controller be used for when malfunction (such as DC bus generation phase fault) being detected output protection signal to thyristor driver controller, it should be noted that, when DC bus generation phase fault, each submodule controller all this malfunction can be detected rapidly and output protection signal to thyristor driver controller, this belongs to prior art, repeat no more, the guard signal that described thyristor driver controller is used for exporting according to each submodule controller judges whether the control end of output drive signal to thyristor V1, namely, the built-in Rule of judgment of thyristor driver controller, if the guard signal that each submodule controller exports meets this Rule of judgment, then output drive signal is to the control end of thyristor V1, thus conducting thyristor V1, if the guard signal that each submodule controller exports does not meet this Rule of judgment, then not output drive signal to the control end of thyristor V1, thus cutoff thyristor V1.
The built-in Rule of judgment of described thyristor driver controller can be divided into two kinds.
The first Rule of judgment is: any one or more submodule controller output protection signals in n sub-module controller, " multiple " here refer to and are greater than 1 and the integer being less than n.That is, when described thyristor driver controller is used for any one or more submodule controller output protection signal in n sub-module controller, output drive signal to the control end of thyristor V1, otherwise, not output drive signal.
The second Rule of judgment is: n the equal output protection signal of sub-module controller.That is, described thyristor driver controller is used for when the equal output protection signal of n sub-module controller, output drive signal to the control end of thyristor V1, otherwise, not output drive signal.
In the present embodiment; high level signal can be adopted to represent submodule controller output protection signal; adopt low level signal to represent submodule controller not output protection signal, then thyristor driver controller receives several high level signal and just shows have several submodule controller to output guard signal.
In order to strengthen the reliability of turn on thyristors, in the present embodiment, the built-in Rule of judgment of described thyristor driver controller adopts the second.
Described thyristor driver controller can adopt the existing general integrated circuit with logical calculated and driving function; Or described thyristor driver controller can adopt structure as shown in Figure 5, it comprises power supply, logical AND chip circuit, optical coupling isolation circuit and drive amplification circuit,
Described power supply is connected with drive amplification circuit with logical AND chip circuit, optical coupling isolation circuit respectively, for providing electric energy;
Described logical AND chip circuit is connected with n sub-module controller, for receiving the guard signal that n sub-module controller exports, and export optical coupling isolation circuit to after this n road guard signal is converted to a road available protecting signal, visible, only when n submodule equal output protection signal (high level signal), available protecting signal (high level signal) after logical "and", could be exported;
Described optical coupling isolation circuit exports drive amplification circuit to after being used for carrying out isolated variable to this road available protecting signal;
After described drive amplification circuit is used for carrying out amplifying process to the available protecting signal after isolated variable, output drive signal is to the control end of thyristor V1, and this drive singal and triggering and conducting signal, for conducting thyristor V1.
As shown in Figure 6, the present embodiment also provides a kind of three-phase MMC topological structure, it comprises three facies units, namely the A facies unit in Fig. 6, B facies unit and C facies unit, each facies unit includes brachium pontis and lower brachium pontis, the upper brachium pontis of each facies unit and lower brachium pontis include the reactor L and multiple subelement that connect successively, and described subelement adopts above-mentioned power subelement.
The present embodiment also provides a kind of converter adopting above-mentioned three-phase MMC topological structure.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present utility model is described and adopts, but the utility model is not limited thereto.For those skilled in the art, when not departing from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement are also considered as protection range of the present utility model.
Claims (10)
1. a power subelement, it, for forming MMC topological structure, is characterized in that, described power subelement comprises submodule that n connects successively and the thyristor V1 with this n submodule reverse parallel connection, and n be more than or equal to 3 integer, submodule i comprises insulated gate bipolar transistor Ti1 and the diode Di1 with its reverse parallel connection, insulated gate bipolar transistor Ti2 and the diode Di2 with its reverse parallel connection, electric capacity Ci and K switch i, the collector electrode of insulated gate bipolar transistor Ti1 is connected with one end of electric capacity Ci, the emitter of insulated gate bipolar transistor Ti1 is connected with the collector electrode of insulated gate bipolar transistor Ti2, the emitter of insulated gate bipolar transistor Ti2 is connected with the other end of electric capacity Ci, the two ends of K switch i are connected with the collector and emitter of insulated gate bipolar transistor Ti2 respectively, and i gets 1 successively, 2, ..., n.
2. power subelement according to claim 1, is characterized in that,
The collector electrode of the insulated gate bipolar transistor Tj2 of submodule j is connected with the emitter of the insulated gate bipolar transistor T (j-1) 2 of adjacent previous submodule (j-1), the emitter of the insulated gate bipolar transistor Tj2 of submodule j is connected with the collector electrode of the insulated gate bipolar transistor T (j+1) 2 of an adjacent rear submodule (j+1), and j gets 2 successively, 3, ..., (n-1);
The anode of thyristor V1 is connected with the emitter of the insulated gate bipolar transistor Tn2 of the n-th submodule, and negative electrode is connected with the collector electrode of the insulated gate bipolar transistor T12 of the 1st submodule.
3. power subelement according to claim 1 and 2, is characterized in that,
The quantity n of the submodule that described power subelement comprises also needs to meet:
ROUNDUP(U
1/U
2，0)≤n≤ROUNDDOWN(U
3/U
4，0) (1)
In formula (1), U
1for the turn-on voltage of thyristor V1, U
2for the conduction voltage drop value of the diode in each submodule, U
3for the load voltage value of thyristor V1, U
4for the magnitude of voltage of the electric capacity in each submodule.
4. power subelement according to claim 1 and 2, is characterized in that,
The quantity n of the submodule that described power subelement comprises also needs to meet:
ROUNDUP(U
1/U
2，0)+1≤n≤ROUNDDOWN(U
3/U
4，0) (2)
In formula (2), U
1for the turn-on voltage of thyristor V1, U
2for the conduction voltage drop value of the diode in each submodule, U
3for the load voltage value of thyristor V1, U
4for the magnitude of voltage of the electric capacity in each submodule.
5. power subelement according to claim 1, is characterized in that,
Described power subelement also comprises thyristor driver controller, and n the submodule that described power subelement comprises all has controller,
Each submodule controller be used for when malfunction being detected output protection signal to thyristor driver controller;
The guard signal that described thyristor driver controller is used for exporting according to each submodule controller judges whether the control end of output drive signal to thyristor V1, thus conducting or cutoff thyristor V1.
6. power subelement according to claim 5, is characterized in that,
When described thyristor driver controller is used for any one or more submodule controller output protection signal in n sub-module controller, output drive signal is to the control end of thyristor V1.
7. power subelement according to claim 5, is characterized in that,
Described thyristor driver controller is used for when the equal output protection signal of the individual sub-module controller of n, and output drive signal is to the control end of thyristor V1.
8. power subelement according to claim 7, is characterized in that,
Described thyristor driver controller comprises power supply, logical AND chip circuit, optical coupling isolation circuit and drive amplification circuit,
Described power supply is connected with drive amplification circuit with logical AND chip circuit, optical coupling isolation circuit respectively, for providing electric energy;
Described logical AND chip circuit is connected with n sub-module controller, for receiving the guard signal that n sub-module controller exports, and exports optical coupling isolation circuit to after this n road guard signal is converted to a road available protecting signal;
Described optical coupling isolation circuit exports drive amplification circuit to after being used for carrying out isolated variable to this road available protecting signal;
After described drive amplification circuit is used for carrying out amplifying process to the available protecting signal after isolated variable, output drive signal is to the control end of thyristor V1.
9. a three-phase MMC topological structure, comprise three facies units, each facies unit includes brachium pontis and lower brachium pontis, the upper brachium pontis of each facies unit and lower brachium pontis include the reactor and multiple subelement of connecting successively, it is characterized in that, described subelement adopts the power subelement according to any one of claim 1 ~ 8.
10. a converter, is characterized in that, described converter adopts three-phase MMC topological structure according to claim 9.
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| CN106154086A (en) * | 2016-08-05 | 2016-11-23 | 南京南瑞继保电气有限公司 | A kind of MMC dynamic analog submodule unit with topological switching capability |
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| CN111342691A (en) * | 2020-04-09 | 2020-06-26 | 华中科技大学 | Si device and SiC device mixed MMC and modulation method thereof |
| CN111342691B (en) * | 2020-04-09 | 2020-12-08 | 华中科技大学 | Si device and SiC device mixed MMC and modulation method thereof |
| CN113904573A (en) * | 2021-10-13 | 2022-01-07 | 山东大学 | Half-bridge improved MMC sub-module topological structure and control method thereof |
| CN113904573B (en) * | 2021-10-13 | 2023-10-27 | 山东大学 | Half-bridge improved MMC submodule topological structure and control method thereof |
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