CN204102939U - A kind of wide colour gamut LED and backlight assembly thereof - Google Patents
A kind of wide colour gamut LED and backlight assembly thereof Download PDFInfo
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- CN204102939U CN204102939U CN201420539352.XU CN201420539352U CN204102939U CN 204102939 U CN204102939 U CN 204102939U CN 201420539352 U CN201420539352 U CN 201420539352U CN 204102939 U CN204102939 U CN 204102939U
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Abstract
The utility model provides a kind of wide colour gamut LED and backlight assembly thereof, comprise a LED support, described LED support top caves inward and forms groove for installing LED chip, at least one LED chip is provided with at bottom portion of groove, it is characterized in that, described LED chip is blue light or purple LED chip, fluorescence conversion composite bed is filled with in groove, described fluorescence conversion composite bed comprises the red fluorescence conversion layer that is covered in the surface of the exiting surface of LED chip, the one green fluorescence conversion layer being laminated in red fluorescence conversion layer upper surface, and one be laminated in green fluorescence conversion layer upper surface have the strong fluorescence conversion layer absorbed in 460 ~ 510nm wavelength band.The LED of the wide colour gamut that the utility model provides, it can reduce LED height NTSC value to the rigors of required green emitting phosphor half-peak breadth.
Description
Technical field
The utility model relates to LED technology field, particularly the wide colour gamut LED of one and backlight assembly thereof.
Background technology
The color representation degree of LCD TV receives the concern of more and more people, has become the new trend of field of backlights development.Color representation degree can carry out quantitative measurement with NTSC, and NTSC is higher, and its expressible color is abundanter.In LCD TV, each pixel is made up of R, G, B tri-rectangle color lumps, and color representation depends on the performance of backlight module and color filter.Traditional TV backlight module adopts CCFL as light source, and its NTSC is only between 65%-75%.LED is as the emerging light source of one, and it has the characteristic such as good reliability, energy-saving and environmental protection, has the trend progressively replacing traditional C CFL light source.With YAG fluorescent powder coating its NTSC of LED light source be 72%-80%, and with G/R fluorescent material apply its NTSC of LED light source can more than 80%.The half-peak breadth of G/R fluorescent material directly affects the NTSC value of LED, and in general the narrower NTSC of the half-peak breadth of fluorescent material is higher, if the half-peak breadth of G/R powder can at below 50nm, its NTSC is easy to accomplish more than 90%.But its half-peak breadth of G powder of traditional LED is difficult to accomplish below 50nm, R powder half-peak breadth difficulty accomplishes below 70nm, and this directly causes the light source NTSC value encapsulated by traditional LED fluorescent powder to be greatly limited;
The fluorescent material new material finding half-peak breadth narrower becomes the important channel obtaining wide colour gamut, as nanometer materials quantum dot (QD) and non-rare earth rouge and powder K
2siF
6/ Mn, its half-peak breadth is many at below 30nm, and NTSC is easy to reach more than 95%, even more than 100%, but the toxicity that above material tool is very strong, limit its application to a certain extent.
The half-peak breadth of ruddiness or green LED chip is at below 40nm, the green/red fluorescent material of broad peak is substituted with the green glow of narrow half-peak breadth or red light chips, its NTSC is easy to be greater than 90%, but the difficult point of the program is how to reach the chromaticity coordinates point of specifying by the ratio between adjustment chip, and G/R chip adds the cost of light source;
How on traditional LED fluorescent powder packaging basis, reduce high NTSC value to the rigors of fluorescent material half-peak breadth, realize wider colour gamut, and how on existing high NTSC method for packing basis, to promote colour gamut further, become the art urgently technical issues that need to address.
Utility model content
In order to overcome above-mentioned deficiency, the purpose of this utility model is the LED providing a kind of wide colour gamut, and it can reduce LED height NTSC value to the rigors of required green emitting phosphor half-peak breadth.
The utility model is for reaching its object, and the technical scheme of employing is as follows:
A kind of wide colour gamut LED, comprise a LED support, described LED support top caves inward and forms groove for installing LED chip, at least one LED chip is provided with at bottom portion of groove, it is characterized in that, described LED chip is blue light or purple LED chip, fluorescence conversion composite bed is filled with in groove, described fluorescence conversion composite bed comprises the red fluorescence conversion layer that is covered in the surface of the exiting surface of LED chip, the one green fluorescence conversion layer being laminated in red fluorescence conversion layer upper surface, and one be laminated in green fluorescence conversion layer upper surface have the strong fluorescence conversion layer absorbed in 460 ~ 510nm wavelength band.
Preferably, red fluorescence conversion layer, green fluorescence conversion layer and have the strong filling thickness of fluorescence conversion layer three in the groove of LED support absorbed to be 1/3 of depth of groove in 460 ~ 510nm wavelength band.
Further, described have the peak wavelength of strong its fluorescence transition material adopted of fluorescence conversion layer absorbed between 460-510nm in 460 ~ 510nm wavelength band, and half-peak breadth is less than 40nm, and 10
4< absorption coefficient ε <10
6lmol
-1cm
-1, and in 550nm-610nm region without transmitting or utilizing emitted light more weak.
Concrete, described fluorescence transition material is selected from has the strong tungstates, organic compound or the doping Pr that absorb in 460 ~ 510nm wavelength band
3+β-Sai Long.
Further, its fluorescence transition material adopted of described red fluorescence conversion layer be peak wavelength between 620nm-670nm, half-peak breadth is at the red fluorescence transition material of below 100nm.
Concrete, described red fluorescence transition material is selected from nitride, silicate, quantum dot, K/Na
2siF
6: Mn
4+or K/Na
2tiF
6: Mn
4+.
Further, its fluorescence transition material adopted of described green fluorescence conversion layer be peak wavelength between 510nm-545nm, half-peak breadth is at the green fluorescence transition material of below 70nm.
Concrete, described green fluorescence transition material is selected from doping Eu
2+β-Sai Long, silicate or quantum dot.
The utility model also provides a kind of wide colour gamut LED-backlit assembly, and it comprises wide colour gamut LED as described above.
Described backlight assembly is direct-insert or side entrance back assembly.
The technical scheme that the utility model provides has following beneficial effect:
1, the LED that provides of the utility model, its red fluorescence conversion layer directly overlays LED chip surface, green fluorescence conversion layer is layered on red fluorescence conversion layer, thus the green glow avoiding green fluorescence conversion layer to send is absorbed by red fluorescence conversion layer and reduces brightness, there is the strong fluorescence conversion layer absorbed to be layered on green fluorescence conversion layer in 460-510nm wavelength band, thus sponge the lap between blue light and green glow.
2, the LED of the utility model structure is adopted, it utilizes has the strong fluorescence conversion layer absorbed to absorb affecting blue green light wave band overlapping between the G/B of colorimetric purity in 460-510nm wavelength band, do not affect the intensity of G/B peak value simultaneously, original NTSC basis can realize wider colour gamut.
3, adopt the LED of the utility model structure, it does not need the LED that strictly yet can obtain wide colour gamut at below 50nm to green emitting phosphor half-peak breadth.
4, wide its colour gamut of colour gamut LED (NTSC) that the utility model provides can reach more than 90%.
Accompanying drawing explanation
Fig. 1 is the generalized section of the wide colour gamut LED that the utility model provides;
Fig. 2 is the wide colour gamut LED direct type backlight assembly that embodiment 3 provides;
Fig. 3 is the wide colour gamut LED side entrance back assembly that embodiment 4 provides;
Fig. 4 is the excitation-emission spectrogram of the LED of embodiment 1;
Fig. 5 is the exciting light spectrogram of the LED of embodiment 2.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Embodiment 1
See Fig. 1, the present embodiment provides a kind of wide colour gamut LED 100, it comprises a LED support 102, and this LED support top caves inward and forms groove 103 (or being referred to as cup) for installing LED chip 101, and LED chip 101 is located at the bottom surface of groove 103.In the present embodiment, LED chip 101 used for emission peak scope be the blue-light LED chip of 445nm-457.5nm.In the groove 103 of LED support 102, be filled with fluorescence conversion composite bed 104, what this fluorescence conversion composite bed 104 comprised that green fluorescence conversion layer 106 and that a red fluorescence conversion layer 105, being covered in the surface of the exiting surface of LED chip 101 is laminated in red fluorescence conversion layer 105 upper surface is laminated in green fluorescence conversion layer 106 upper surface has the strong fluorescence conversion layer 107 absorbed in 460 ~ 510nm wavelength band.
Its material of red fluorescence conversion layer 105 preferably adopts existing peak wavelength to be the red fluorescence transition material of below 100nm in 660-670nm, half-peak breadth, such as Nitride phosphor, silicate, quantum dot, K/Na
2siF
6: Mn
4+or K/Na
2tiF
6: Mn
4+, quantum dot is concrete as CdS, CdSe, ZnS, ZnSe, InP etc.The rouge and powder Nitride phosphor that in the present embodiment, the fluorescence transition material that red fluorescence conversion layer 105 specifically adopts is peak wavelength 660-670nm, half-peak breadth is 90-100nm.
Its material of green fluorescence conversion layer 106 preferably adopts existing peak wavelength between 510nm-545nm, half-peak breadth at the green fluorescence transition material of below 70nm, such as adulterate Eu
2+β-Sai Long, silicate, quantum dot etc.; Quantum dot is concrete as CdS, CdSe, ZnS, ZnSe, InP etc.In the present embodiment, the β-Sai Long green emitting phosphor of the fluorescence transition material that green fluorescence conversion layer 106 specifically adopts to be peak wavelength in 525-535nm, half-peak breadth be 50-60nm.
Described have the strong fluorescence conversion layer 107 absorbed in 460 ~ 510nm wavelength band it adopt the existing fluorescence transition material meeting this characteristic, further can select the existing fluorescence transition material meeting following characteristic: peak wavelength is between 460-510nm, half-peak breadth (FWHM) is less than 40nm, 10
4lmol
-1cm
-1< ε (absorption coefficient) <10
6lmol
-1cm
-1, in 550nm-610nm region without transmitting or utilizing emitted light more weak.Its material such as can be doping Pr
3+β-Sai Long (β-sialon), tungstates and have the strong organic compound absorbed in 460 ~ 510nm wavelength band.In the present embodiment, 460-510nm wavelength band has strong its fluorescence transition material adopted of fluorescence conversion layer 107 absorbed specifically to select β-Sai Longhua compound, and this its concrete structure of β-Sai Longhua compound is Si
6-zal
zo
zn
8-z: Pr
xits strong absworption peak between 460-500nm effectively can absorb the overlapping light between blue chip and green emitting phosphor, its emission peak is positioned at 600-640nm, although 600-610nm has fractional transmission can reduce the NTSC of LED, but the transmitting between 610-640 is obviously better than 600-610nm, the NTSC loss that 600-610nm brings can be made up.The LED 100 that the present embodiment provides compares the obtained LED of independent employing G/R fluorescent material, and its NTSC can improve 1%-5%, and its NTSC of the LED of the present embodiment reaches as high as more than 95%.In addition, the LED in the present embodiment, it has the strong fluorescence conversion layer absorbed in 460 ~ 510nm wavelength band, and its ruddiness at 610-640nm also can improve the brightness of LED, promotes while realizing NTSC and brightness.Figure 4 shows that the excitation-emission spectrogram of the LED 100 of the present embodiment.
Preferably, the LED 100 that the present embodiment provides, its red fluorescence conversion layer 105, green fluorescence conversion layer 106 and have the strong filling thickness of fluorescence conversion layer 107 three in LED support 102 groove 103 absorbed to be about 1/3 of groove 103 degree of depth in 460 ~ 510nm wavelength band.
Embodiment 2
Present embodiments provide a kind of wide colour gamut LED, it is substantially identical with embodiment 1, repeats no more for something in common, is described below to difference.The LED 100 that the present embodiment provides is compared with embodiment 1, its difference is: its LED chip 101 is the purple LED chip of emission wavelength at 390nm-400nm, the fluorescence transition material that its green fluorescence conversion layer 106 adopts is that peak wavelength is at 525-535nm, half-peak breadth is the β-Sai Long green emitting phosphor of 50-60nm, the fluorescence transition material that its red fluorescence conversion layer 105 adopts is peak wavelength 660-670nm, half-peak breadth is the rouge and powder Nitride phosphor of 90-100nm, it is have the strong tungstate compound absorbed in 460-510nm wavelength band at the fluorescence transition material that 460 ~ 510nm wavelength band has the strong fluorescence conversion layer 107 absorbed to adopt, the concrete structure of this tungstate compound is Na
5y (MoO
4)
4: Sm
3+, its strong absworption peak between 460-490nm effectively can absorb the overlapping light between purple light chip and green emitting phosphor.The LED that the present embodiment provides compares the obtained LED of independent employing G/R fluorescent material, its NTSC can improve 1%-5%, its NTSC of the LED that the present embodiment provides reaches as high as more than 95%, Figure 5 shows that the exciting light spectrogram of the LED that the present embodiment provides.
The wide colour gamut LED 100 that the utility model provides can be applied in LED-backlit assembly, the backlight assembly of such as straight-down negative or side entering type.Be described further below by embodiment 3,4.
Embodiment 3
The present embodiment provides a kind of wide colour gamut LED direct type backlight assembly 200, this its structure of backlight assembly 200 adopts existing LED direct type backlight assembly structure, and what the main difference of itself and existing LED direct type backlight assembly was that its LED of this backlight assembly adopts is the wide colour gamut LED 100 that embodiment 1 or embodiment 2 provide.Shown in Fig. 2 is a kind of LED direct type backlight assembly 200 that have employed the wide colour gamut LED 100 of embodiment 1.Backlight assembly 200 shown in Fig. 2 its there is pcb board 202, optical lens 201, diffuser plate 204, prismatic lens 205, diffusion sheet 206, backboard 203.LED 100 is located on pcb board 202, LED 100 top is located at by optical lens 201, the pcb board 202 being provided with LED 100 to be fixedly arranged on bottom backboard 203, diffuser plate 204 is located at backboard 203 top, prismatic lens 205 is located at diffuser plate 204 upper surface, and diffusion sheet 206 is located at prismatic lens 205 upper surface.Its NTSC of backlight assembly 200 of the present embodiment reaches as high as more than 95%.
Embodiment 4
The present embodiment provides a kind of wide colour gamut LED side entrance back assembly 300, this its structure of backlight assembly 300 adopts existing LED side entrance back modular construction, and what the main difference of itself and existing side entrance back assembly was that its LED of this backlight assembly adopts is the wide colour gamut LED 100 that embodiment 1 or embodiment 2 provide.Shown in Fig. 3 is a kind of LED side entrance back assembly 300 that have employed the wide colour gamut LED 100 of embodiment 1.Backlight assembly 300 shown in Fig. 3 its there is light guide plate 303, reflecting piece 302, brightness enhancement film 304, diffusion barrier 305.LED 100 is connected with pcb board 301 and is located at light guide plate 303 side, and reflecting piece 302 and brightness enhancement film 304 are located at lower surface and the upper surface of light guide plate 303 respectively, and diffusion barrier 305 is located at brightness enhancement film 304 upper surface.Its NTSC of backlight assembly 300 of the present embodiment reaches as high as more than 95%.
The utility model is not limited to above-mentioned execution mode, every spirit and scope of the present utility model are not departed to various change of the present utility model or modification, if these are changed and modification belongs within claim of the present utility model and equivalent technologies scope, then the utility model also means that comprising these changes and modification.
Claims (10)
1. one kind wide colour gamut LED, comprise a LED support, described LED support top caves inward and forms groove for installing LED chip, at least one LED chip is provided with at bottom portion of groove, it is characterized in that, described LED chip is blue light or purple LED chip, fluorescence conversion composite bed is filled with in described groove, described fluorescence conversion composite bed comprises the red fluorescence conversion layer that is covered in the surface of the exiting surface of LED chip, the one green fluorescence conversion layer being laminated in red fluorescence conversion layer upper surface, and one be laminated in green fluorescence conversion layer upper surface have the strong fluorescence conversion layer absorbed in 460 ~ 510nm wavelength band.
2. wide colour gamut LED according to claim 1, it is characterized in that, red fluorescence conversion layer, green fluorescence conversion layer and have the strong filling thickness of fluorescence conversion layer three in the groove of LED support absorbed to be 1/3 of depth of groove in 460 ~ 510nm wavelength band.
3. wide colour gamut LED according to claim 1 and 2, it is characterized in that, described have the peak wavelength of strong its fluorescence transition material adopted of fluorescence conversion layer absorbed between 460-510nm in 460 ~ 510nm wavelength band, and half-peak breadth is less than 40nm, and 10
4lmol
-1cm
-1< absorption coefficient ε <10
6lmol
-1cm
-1, and in 550nm-610nm region without transmitting or utilizing emitted light more weak.
4. wide colour gamut LED according to claim 3, is characterized in that, described fluorescence transition material is selected from has the strong tungstates, organic compound or the doping Pr that absorb in 460 ~ 510nm wavelength band
3+β-Sai Long.
5. wide colour gamut LED according to claim 1, is characterized in that, its fluorescence transition material adopted of described red fluorescence conversion layer be peak wavelength between 620nm-670nm, half-peak breadth is at the red fluorescence transition material of below 100nm.
6. wide colour gamut LED according to claim 5, is characterized in that, described red fluorescence transition material is selected from nitride, silicate, quantum dot, K/Na
2siF
6: Mn
4+or K/Na
2tiF
6: Mn
4+.
7. wide colour gamut LED according to claim 1, is characterized in that, its fluorescence transition material adopted of described green fluorescence conversion layer be peak wavelength between 510nm-545nm, half-peak breadth is at the green fluorescence transition material of below 70nm.
8. wide colour gamut LED according to claim 7, is characterized in that, described green fluorescence transition material is selected from doping Eu
2+β-Sai Long, silicate or quantum dot.
9. a wide colour gamut LED-backlit assembly, is characterized in that, it comprises the wide colour gamut LED as described in any one of claim 1 ~ 8.
10. wide colour gamut LED-backlit assembly according to claim 9, is characterized in that, described backlight assembly is direct type backlight assembly or side entrance back assembly.
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|---|---|---|---|
| CN201420539352.XU CN204102939U (en) | 2014-09-18 | 2014-09-18 | A kind of wide colour gamut LED and backlight assembly thereof |
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|---|---|---|---|
| CN201420539352.XU CN204102939U (en) | 2014-09-18 | 2014-09-18 | A kind of wide colour gamut LED and backlight assembly thereof |
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| CN106328635A (en) * | 2016-08-18 | 2017-01-11 | 武汉保丽量彩科技有限公司 | Wide-color-gamut light-emitting device and preparation method thereof |
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| WO2018192228A1 (en) * | 2017-04-19 | 2018-10-25 | 深圳Tcl新技术有限公司 | Led light source, light bar and display device |
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| GR01 | Patent grant | ||
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Address after: 511458 Nansha District, Guangzhou, South Ring Road, No. 33, No. Patentee after: GUANGDONG APT ELECTRONICS LTD. Address before: 511458 Nansha District, Guangzhou, South Ring Road, No. 33, No. Patentee before: APT (Guangzhou) Electronics Ltd. |