CN204088256U - Ion source collimater and ion source - Google Patents
Ion source collimater and ion source Download PDFInfo
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- CN204088256U CN204088256U CN201420544521.9U CN201420544521U CN204088256U CN 204088256 U CN204088256 U CN 204088256U CN 201420544521 U CN201420544521 U CN 201420544521U CN 204088256 U CN204088256 U CN 204088256U
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- collimater
- ion source
- collimating aperture
- sputtering
- sputtering unit
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Abstract
Ion source collimater, comprise collimater matrix, collimating aperture is offered in described collimater matrix, annular sputtering unit is provided with around described collimating aperture, described annular sputtering unit height is lower than collimater body upper surface, the circular orientation step of height higher than collimater body upper surface is also provided with, described annular sputtering unit and collimating aperture dead in line around described annular sputtering unit.The invention also discloses a kind of ion source adopting above-mentioned ion source collimater.Ion source collimater described in the utility model and ion source, with the addition of the groove for depositing sputtering material, makes the maintenance period significant prolongation of collimater, thus the ionogenic life-span is extended; The utility model structure is simple, easy accessibility; Tolerance ion sputtering, adds sputtering grooves, and energy retention under long operating state, maintenance period is long.
Description
Technical field
The utility model belongs to physical electronic field, relates to a kind of ion source collimater and ion source.
Background technology
In penning (PENNING) ion source, collimater is one of its critical component.Only have the plasma produced in antianode cylinder to carry out suitable control, just can reach and draw effect preferably, obtain higher extraction stream strong.This function is realized by collimater.Collimater collimates empty size by changing, position, shape limit the plasma column between anode and cathode parameter, realize optimized output.
Due to collimater next-door neighbour cathode rod, cathode material evaporates and ion sputtering when electron emission, and portion of material can be piled up on the collimator, changes original parameter of collimater, directly affects ionogenic performance and life-span.Change (maintenance) collimater to need to open and close accelerator, accelerator can produce radioactivity in the course of the work, makes maintenance need to wait for that attenuation carries out to during safety value after a shutdown.After collimater is changed, accelerator vacuum is recovered also to need the long period.Thus make the downtime that ion source repair and maintenance is once caused very long.Therefore, a kind of collimater that can withstand long period ion sputtering is developed to extending ion source life thus to improve the time between failures of accelerator most important.
Utility model content
Be subject to cathode material and sputter for overcoming existing ion source collimater the technological deficiency causing ion source life to reduce, the utility model discloses a kind of ion source collimater and ion source.
Ion source collimater described in the utility model, ion source collimater, comprise collimater matrix, collimating aperture is offered in described collimater matrix, annular sputtering unit is provided with around described collimating aperture, described annular sputtering unit height, lower than collimater body upper surface, is also provided with the circular orientation step of height higher than collimater body upper surface, described annular sputtering unit and collimating aperture dead in line around described annular sputtering unit.
Preferably, described ion source collimater entirety is pure tantalum material.
Concrete, described collimater matrix, collimating aperture are circular, and collimating aperture axis and collimater base shaft linear distance are 0 to 2 millimeter.
Further, the diameter of described collimating aperture is 3 to 4 millimeters.
Concrete, described circular orientation shoulder height is higher than collimater body upper surface 1 to 3 millimeter.
The invention also discloses a kind of ion source, comprise columniform anode, be positioned at the ion source collimater as above at anode two ends, described ion source also comprises negative electrode and target, described negative electrode and anticathode tip electrodes shape coordinate with the circular orientation step shape of described ion source collimater, and can cover the collimating aperture of ion source collimater.
Ion source collimater described in the utility model and ion source, with the addition of the groove for depositing sputtering material, makes the maintenance period significant prolongation of collimater, thus the ionogenic life-span is extended; The utility model structure is simple, easy accessibility; Tolerance ion sputtering, adds sputtering grooves, and energy retention under long operating state, maintenance period is long.
Accompanying drawing explanation
Fig. 1 is a kind of embodiment structural representation of ion source collimater described in the utility model;
Fig. 2 illustrates ionogenic a kind of embodiment structural representation described in the utility model;
In figure, Reference numeral name is called: 1-collimater matrix 2-collimating aperture 3-annular sputtering unit 4-circular orientation step 5-collimater body upper surface 6-ion source collimater 7-negative electrode 8-target 9-anode.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
Ion source collimater described in the utility model, comprise collimater matrix 1, collimating aperture 2 is offered in described collimater matrix, annular sputtering unit 3 is provided with around described collimating aperture, described annular sputtering unit height is lower than collimater body upper surface 5, the circular orientation step 4 of height higher than collimater body upper surface is also provided with, described annular sputtering unit and collimating aperture dead in line around described annular sputtering unit 3.
As shown in Figure 1, collimating aperture 2 carries out axis aligning for anode launching tube and cathode rod, namely collimates.
Produce in the process of ion at voltage drive, cathode rod material such as titanium, tungsten, tantalum, lanthanum hexaborides etc. reduce by thermal stability in high temperature high voltage operation process, evaporation and ion sputtering is there is when electron emission, high temperature sputtering thing is splashed to collimater outside, the attachment of collimater outside is deposited in after cooling, collimation device outer wall damages, collimater is for controlling the shape of the internal plasma when ion sputtering, position and extraction effect, the shape of collimation device self, outer wall Electric Field Distribution etc. require strict, cathodic sputtering material causes the Distance Shortened between negative electrode and collimater in the attachment of collimater outer wall, blocking or Partial Blocking collimating aperture, cause collimater hydraulic performance decline.
The utility model around collimating aperture rational height lower than the annular sputtering unit of collimater body upper surface, annular sputtering unit height is lower than collimater body upper surface, and also have height around annular sputtering unit higher than the circular orientation step of collimater body upper surface, form the groove surrounding collimating aperture, cathodic sputtering thing by annular sputtering unit and circular orientation step stop collection, avoid being splashed to collimater outer surface and outer wall, ensure collimater parameter stability, extend collimater useful life, circular orientation step is also fixing for collimater being installed in an ion source.
The perspective view of the ion source collimater of an embodiment of the present utility model is shown as Fig. 1.Collimater matrix 1 is circular, and be made up of the metal (such as tantalum) that can resistance toly be heated and tolerate ion sputtering, matrix thickness is 2.5mm ~ 3mm, and diameter is about 6mm.The height of circular orientation step is 0.5mm.In the middle part of collimater, have collimating aperture 2, collimating aperture 2 is for limiting shape and the position of plasma, and this collimating aperture is circular, and the collimating aperture center of circle can be selected as the case may be, can at 0 ~ 2mm with departing from of the matrix center of circle, and collimating aperture diameter is 3 ~ 4mm.Around collimating aperture, be provided with annular sputtering unit, for ion sputtering and ion deposition, this annular sputtering unit 3 is concentric circles with collimating aperture, and diameter is greater than collimating aperture, and the degree of depth is less than collimating aperture.Groove can arrange various required shape and size according to actual conditions.
Provide the ionogenic assembly environment and operational environment that adopt ion source collimater of the present invention as shown in Figure 2, this ion source has 2 negative electrodes, i.e. negative electrode 7 and target 8, anode 9, two foregoing ion source collimaters 6 are positioned at the two ends of anode canister, and described negative electrode and anticathode tip electrodes shape coordinate with the circular orientation step shape of described ion source collimater.The lower surface of collimater and anode canister compress and form good electrical contact, thus make 2 collimaters and anode be in equipotential.The circular orientation step of upper surface and negative electrode are fixed, and negative electrode, target, anode, collimater are fixed on ionogenic matrix.
On negative electrode, apply a negative high voltage during use, be about 1 ~ 3KV, cathode emission electronics, form high-temperature plasma in anode 9, collimater controls the shape of this plasma and position reaches best extraction effect, under the effect of extra electric field, draw ion current.
Adopting ion source collimater described in the utility model and ion source, with the addition of the groove for depositing sputtering material, make the maintenance period significant prolongation of collimater, thus the ionogenic life-span is extended; The utility model structure is simple, easy accessibility; Tolerance ion sputtering, adds sputtering grooves, and energy retention under long operating state, maintenance period is long.
Previously described is each preferred embodiment of the present utility model, preferred implementation in each preferred embodiment is if not obviously contradictory or premised on a certain preferred implementation, each preferred implementation can stack combinations use arbitrarily, design parameter in described embodiment and embodiment is only the utility model proof procedure in order to clear statement utility model people, and be not used to limit scope of patent protection of the present utility model, scope of patent protection of the present utility model is still as the criterion with its claims, the equivalent structure change that every utilization specification of the present utility model and accompanying drawing content are done, in like manner all should be included in protection range of the present utility model.
Claims (6)
1. ion source collimater, it is characterized in that, comprise collimater matrix (1), collimating aperture (2) is offered in described collimater matrix, annular sputtering unit (3) is provided with around described collimating aperture, described annular sputtering unit (3) height is lower than collimater body upper surface (5), and described annular sputtering unit (3) is also provided with the circular orientation step (4) of height higher than collimater body upper surface (5) around, described annular sputtering unit (3) and collimating aperture (2) dead in line.
2. ion source collimater as claimed in claim 1, it is characterized in that, described ion source collimater entirety is pure tantalum material.
3. ion source collimater as claimed in claim 1, is characterized in that, described collimater matrix, collimating aperture are circular, and collimating aperture axis and collimater base shaft linear distance are 0 to 2 millimeter.
4. ion source collimater as claimed in claim 3, it is characterized in that, the diameter of described collimating aperture is 3 to 4 millimeters.
5. ion source collimater as claimed in claim 1, it is characterized in that, described circular orientation shoulder height is higher than collimater body upper surface 1 to 3 millimeter.
6. ion source, it is characterized in that, comprise columniform anode (9), be positioned at the ion source collimater (6) as described in claim 1 to 5 any one at anode two ends, described ion source also comprises negative electrode (7) and target (8), the tip electrodes shape of described negative electrode (7) and target (8) coordinates with the circular orientation step shape of described ion source collimater (6), and can cover the collimating aperture of ion source collimater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201420544521.9U CN204088256U (en) | 2014-09-22 | 2014-09-22 | Ion source collimater and ion source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420544521.9U CN204088256U (en) | 2014-09-22 | 2014-09-22 | Ion source collimater and ion source |
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| CN204088256U true CN204088256U (en) | 2015-01-07 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106128928A (en) * | 2016-07-29 | 2016-11-16 | 中国原子能科学研究院 | The deriving structure of miniature Penning ion source under a kind of highfield |
| CN107645823A (en) * | 2017-11-01 | 2018-01-30 | 上海联影医疗科技有限公司 | Colimated light system and accelerator |
| CN108419356A (en) * | 2018-05-16 | 2018-08-17 | 中国工程物理研究院流体物理研究所 | Method and ion source apparatus for promoting the cyclotron internal ion-source service life |
| CN109411321A (en) * | 2018-10-29 | 2019-03-01 | 中国船舶重工集团公司第七0七研究所 | A kind of device and method applied to ion beam etching protection from splash |
-
2014
- 2014-09-22 CN CN201420544521.9U patent/CN204088256U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106128928A (en) * | 2016-07-29 | 2016-11-16 | 中国原子能科学研究院 | The deriving structure of miniature Penning ion source under a kind of highfield |
| CN107645823A (en) * | 2017-11-01 | 2018-01-30 | 上海联影医疗科技有限公司 | Colimated light system and accelerator |
| CN108419356A (en) * | 2018-05-16 | 2018-08-17 | 中国工程物理研究院流体物理研究所 | Method and ion source apparatus for promoting the cyclotron internal ion-source service life |
| CN108419356B (en) * | 2018-05-16 | 2023-09-22 | 中国工程物理研究院流体物理研究所 | Method for improving service life of ion source in cyclotron and ion source equipment |
| CN109411321A (en) * | 2018-10-29 | 2019-03-01 | 中国船舶重工集团公司第七0七研究所 | A kind of device and method applied to ion beam etching protection from splash |
| CN109411321B (en) * | 2018-10-29 | 2021-02-12 | 中国船舶重工集团公司第七0七研究所 | Device and method applied to ion beam etching sputtering protection |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170426 Address after: 621000 Sanjiang Road, Mianyang, Sichuan Province Road, No. 39 Patentee after: Sichuan Source Technology Co., Ltd. Address before: Mianyang City, Sichuan Province, 621000 Mountain Road No. 64 Patentee before: Fluid Physics Inst., China Engineering Physics Academy |
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| TR01 | Transfer of patent right |