CN204011471U - A kind of deep ultraviolet LED device encapsulation structure - Google Patents
A kind of deep ultraviolet LED device encapsulation structure Download PDFInfo
- Publication number
- CN204011471U CN204011471U CN201420396320.9U CN201420396320U CN204011471U CN 204011471 U CN204011471 U CN 204011471U CN 201420396320 U CN201420396320 U CN 201420396320U CN 204011471 U CN204011471 U CN 204011471U
- Authority
- CN
- China
- Prior art keywords
- deep ultraviolet
- ceramics bracket
- quartz lens
- led device
- encapsulation structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a kind of deep ultraviolet LED device encapsulation structure, comprise ceramics bracket, and be located at the deep ultraviolet chip on ceramics bracket base die bond position, deep ultraviolet chip is connected to positive and negative electrode by silver-colored line; On described ceramics bracket, be bonded with quartz lens by adhesives, between quartz lens and ceramics bracket base, be filled with protective gas layer.After lens and ceramics bracket sealing-in, form airtight chip guard space, the protective gas of filling has been avoided oxygen and the corrosion of steam to deep ultraviolet chip, has extended the life-span of device; In addition the good heat dispersion of ceramics bracket, the conduction of the heat that produces while having accelerated chip operation, has improved the working life of device, and adopts the packaging of SMD pattern support to be applicable to pipelining, has improved production efficiency.
Description
Technical field
The utility model relates to a kind of encapsulating structure of deep ultraviolet LED device, and realizes the special construction of ceramics bracket that this structure adopts and the special construction of quartz glass lens, and realizes the feature of protective gas that this structure is used and binding agent.
Background technology
Because the wavelength of deep ultraviolet LED is shorter, energy is very strong, causes material property deteriorated serious, so require harsh to encapsulation technology and encapsulating material.Deep ultraviolet LED encapsulating products in the market is mainly encapsulated as master so that the TO with glass lens is solid, although its life-span is longer, compared with SMD type LED lamp pearl, shortcoming is to be not suitable for carrying out mass, pipelining in application end; And the deep ultraviolet lamp pearl of traditional SMD type and imitative lumen type, because chip surface and gold thread do not have protective layer, the life-span of lamp pearl is shorter, and practical application inconvenience, is easy to cause chip damage and gold thread to rupture.
Utility model content
In order to address the above problem; the utility model provides a kind of novel deep ultraviolet LED device encapsulation structure; this technical optimization has been improved the encapsulation technology of deep ultraviolet LED device; the quartz lens of special construction carries out sealing-in by special binder material with the special ceramics support matching in specific protective atmosphere; the protective gas that forms airtight chip guard space and filling has completely cut off steam and the corrosion of oxygen to deep ultraviolet chip; extended the working life of device, and SMD encapsulation pattern is applicable to the pipelining of mass.
The technical scheme that the utility model adopts is as follows:
A kind of deep ultraviolet LED device encapsulation structure that the utility model embodiment provides, comprises ceramics bracket, and is located at the deep ultraviolet chip on ceramics bracket base die bond position, deep ultraviolet chip is connected to positive and negative electrode by silver-colored line; On described ceramics bracket, be bonded with quartz lens by adhesives, between quartz lens and ceramics bracket base, be filled with protective gas layer.
Preferably, described ceramics bracket comprises support cup wall and bracket base, and the bowl cup cavity being surrounded by described support cup wall is located on bracket base, and described support cup wall is provided with rack groove, and rack groove inner side is provided with quartz lens limiting stand.
Preferably, the external diameter of described rack groove is identical with the external diameter of quartz lens, and the internal diameter of described rack groove is identical with the internal diameter of quartz lens, and the degree of depth of described rack groove is identical with the periphery boss degree of depth of quartz lens.
Preferably, described quartz lens bottom inside is provided with outer frustum, and the tapering of outer frustum is identical with the tapering of described rack groove inner side.
Preferably, described protective gas layer is nitrogen or the argon gas inert gas that can tolerate deep ultraviolet radiation.
Preferably, described layer of adhesive material is dimethyl silicone polymer or SiO
2it is the binding agent of main material.
Special ceramics bracket has been processed in the utility model design, the quartz glass lens that design processing is corresponding with described ceramics bracket.In the glove box of specific protective gas, ceramics bracket and quartz lens after adopting special binder material to die bond bond, because form airtight chip guard space after lens and ceramics bracket sealing-in, the protective gas of filling has been avoided oxygen and the corrosion of steam to deep ultraviolet chip, has extended the life-span of device; In addition the good heat dispersion of ceramics bracket, the conduction of the heat that produces while having accelerated chip operation, has improved the working life of device, and adopts the packaging of SMD pattern support to be applicable to pipelining, has improved production efficiency.
Brief description of the drawings
Accompanying drawing described herein is used to provide further understanding of the present utility model, and it forms the application's a part, but does not form improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 is encapsulating structure schematic diagram of the present utility model.
Fig. 2 is special ceramics supporting structure schematic diagram of the present utility model.
Fig. 3 is that special ceramics support concrete structure size of the present utility model limits schematic diagram.
Fig. 4 is special quartz glass lens arrangement schematic diagram of the present utility model.
Fig. 5 is special quartz glass lens sizes limiting structure schematic diagram of the present utility model.
In figure: 1-ceramics bracket; 2-quartz lens; 3-inert gas; 4-bonding agent; 5-deep ultraviolet chip; 6-lead-in wire; 101-support cup wall; 2-rack groove; 103-support lead plate; 104-deep ultraviolet chip base; 105-quartz lens limiting stand; 106-bracket base.
Embodiment
Describe the utility model in detail below in conjunction with accompanying drawing and specific embodiment, be used for explaining the utility model in this illustrative examples of the present utility model and explanation, but not as to restriction of the present utility model.
As shown in Figure 1, a kind of deep ultraviolet LED device encapsulation structure, comprises ceramics bracket 1, and is located at the deep ultraviolet chip 5 on ceramics bracket 1 base die bond position, and deep ultraviolet chip 5 is connected to positive and negative electrode by silver-colored line 6; On ceramics bracket 1, be bonded with quartz lens 2 by adhesives 4, between quartz lens 2 and ceramics bracket 1 base, be filled with protective gas layer 3, protective gas layer 3 is for tolerating nitrogen or the argon gas inert gas of deep ultraviolet radiation.
As shown in Figure 2, ceramics bracket 1 comprises support cup wall 101 and bracket base 106, the bowl cup cavity being surrounded by described support cup wall 101 is located on bracket base 106, support cup wall 101 is provided with rack groove 102, rack groove 102 inner sides are provided with quartz lens limiting stand 105, and support lead plate 103 and deep ultraviolet chip base 104 are located at respectively on bowl cup cavity bottom surface.
As shown in Figure 3, the external diameter of rack groove 102 is identical with the external diameter of quartz lens 2, and the internal diameter of rack groove 102 is identical with the internal diameter of quartz lens 2, and the degree of depth of rack groove 102 is identical with the periphery boss degree of depth of quartz lens 2.
As shown in Figure 4,5, quartz lens 2 bottom inside are provided with outer frustum, and the tapering of outer frustum is identical with the tapering of described rack groove 102 inner sides.
The layer of adhesive material 4 using in this structure is dimethyl silicone polymer or SiO
2it is the binding agent of main material.The utility model adopts the quartz lens of special construction and the ceramics bracket matching to carry out sealing-in by special binder material in specific protective atmosphere.
Embodiment: design processing ceramics bracket as shown in Figure 3, the SMD pattern ceramics bracket design processing that support is special construction quartz glass lens as shown in Figure 5.In the glove box of high pure nitrogen atmosphere, adopt ceramics bracket and the quartz lens of OE6370M after to die bond to carry out sealing-in, then baking-curing in the hot-blast oven of high pure nitrogen atmosphere.Because form airtight chip guard space after lens and ceramics bracket sealing-in, the high pure nitrogen protective gas of filling, has avoided the corrosion to deep ultraviolet chip of oxygen and steam, has extended the life-span of device; In addition the good heat dispersion of ceramics bracket, the conduction of the heat that produces while having accelerated chip operation, has improved the working life of device, and adopts the packaging of SMD pattern support to be applicable to pipelining, has improved production efficiency.
Above content is in conjunction with concrete preferred implementation further detailed description of the utility model; can not assert that embodiment of the present utility model only limits to this; for the utility model person of an ordinary skill in the technical field; without departing from the concept of the premise utility; can also make some simple deduction or replace, all should be considered as belonging to the utility model and determine scope of patent protection by submitted to claims.
Claims (6)
1. a deep ultraviolet LED device encapsulation structure, it is characterized in that: comprise ceramics bracket (1), and being located at the deep ultraviolet chip (5) on ceramics bracket (1) base die bond position, deep ultraviolet chip (5) is connected to positive and negative electrode by silver-colored line (6); Described ceramics bracket (1) is upper is bonded with quartz lens (2) by adhesives (4), between quartz lens (2) and ceramics bracket (1) base, is filled with protective gas layer (3).
2. deep ultraviolet LED device encapsulation structure according to claim 1, it is characterized in that: described ceramics bracket (1) comprises support cup wall (101) and bracket base (106), the bowl cup cavity being surrounded by described support cup wall (101) is located on bracket base (106), described support cup wall (101) is provided with rack groove (102), and rack groove (102) inner side is provided with quartz lens limiting stand (105).
3. deep ultraviolet LED device encapsulation structure according to claim 2, it is characterized in that: the external diameter of described rack groove (102) is identical with the external diameter of quartz lens (2), the internal diameter of described rack groove (102) is identical with the internal diameter of quartz lens (2), and the degree of depth of described rack groove (102) is identical with the periphery boss degree of depth of quartz lens (2).
4. deep ultraviolet LED device encapsulation structure according to claim 2, is characterized in that: described quartz lens (2) bottom inside is provided with outer frustum, and the tapering of outer frustum is identical with the tapering of described rack groove (102) inner side.
5. deep ultraviolet LED device encapsulation structure according to claim 1, is characterized in that: described protective gas layer (3) is for tolerating nitrogen or the argon gas inert gas of deep ultraviolet radiation.
6. deep ultraviolet LED device encapsulation structure according to claim 1, is characterized in that: described layer of adhesive material (4) is dimethyl silicone polymer or SiO
2it is the binding agent of main material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420396320.9U CN204011471U (en) | 2014-07-17 | 2014-07-17 | A kind of deep ultraviolet LED device encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420396320.9U CN204011471U (en) | 2014-07-17 | 2014-07-17 | A kind of deep ultraviolet LED device encapsulation structure |
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| Publication Number | Publication Date |
|---|---|
| CN204011471U true CN204011471U (en) | 2014-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420396320.9U Expired - Fee Related CN204011471U (en) | 2014-07-17 | 2014-07-17 | A kind of deep ultraviolet LED device encapsulation structure |
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| CN (1) | CN204011471U (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106299042A (en) * | 2016-08-30 | 2017-01-04 | 江苏稳润光电有限公司 | A kind of ultraviolet LED light source inorganic encapsulated method |
| CN106684227A (en) * | 2016-12-30 | 2017-05-17 | 江苏稳润光电有限公司 | Ultraviolet LED package method |
| CN106816202A (en) * | 2017-02-15 | 2017-06-09 | 山东圣泉新材料股份有限公司 | A kind of Graphene denatured conductive silver paste and preparation method thereof |
| CN106935695A (en) * | 2017-05-17 | 2017-07-07 | 广东工业大学 | A kind of uv-LED device |
| CN108198930A (en) * | 2017-12-29 | 2018-06-22 | 佛山市南海区联合广东新光源产业创新中心 | One kind is easily installed fixed deep ultraviolet LED encapsulation structure |
| CN108321287A (en) * | 2018-03-16 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of deep ultraviolet LED lamp bead inorganic encapsulated structure |
| US10134963B2 (en) | 2015-12-04 | 2018-11-20 | Industrial Techology Research Institute | Package structure of an ultraviolet light emitting diode |
| CN109103319A (en) * | 2018-08-21 | 2018-12-28 | 华中科技大学鄂州工业技术研究院 | A kind of deep ultraviolet LED encapsulation structure and its packaging method |
| CN109411587A (en) * | 2018-12-10 | 2019-03-01 | 邱凡 | A kind of purple LED production method and its purple LED containing silica-gel lens |
| CN109786535A (en) * | 2018-12-17 | 2019-05-21 | 旭宇光电（深圳）股份有限公司 | Deep-UV light-emitting device |
| CN110197865A (en) * | 2019-05-14 | 2019-09-03 | 湖北深紫科技有限公司 | A kind of deep ultraviolet LED packaging of liquid-packing and preparation method thereof |
| CN110752282A (en) * | 2019-11-29 | 2020-02-04 | 华引芯（武汉）科技有限公司 | UV LED device with high lighting effect and high reliability and preparation method thereof |
| CN110931625A (en) * | 2019-12-24 | 2020-03-27 | 厦门多彩光电子科技有限公司 | LED packaging method |
| CN111739990A (en) * | 2020-05-20 | 2020-10-02 | 天津中环电子照明科技有限公司 | Ultraviolet LED packaging method and ultraviolet LED packaging |
| CN113113524A (en) * | 2021-03-30 | 2021-07-13 | 佛山市国星光电股份有限公司 | Deep ultraviolet LED device and manufacturing method thereof |
-
2014
- 2014-07-17 CN CN201420396320.9U patent/CN204011471U/en not_active Expired - Fee Related
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10134963B2 (en) | 2015-12-04 | 2018-11-20 | Industrial Techology Research Institute | Package structure of an ultraviolet light emitting diode |
| CN106299042A (en) * | 2016-08-30 | 2017-01-04 | 江苏稳润光电有限公司 | A kind of ultraviolet LED light source inorganic encapsulated method |
| CN106684227A (en) * | 2016-12-30 | 2017-05-17 | 江苏稳润光电有限公司 | Ultraviolet LED package method |
| CN106684227B (en) * | 2016-12-30 | 2018-05-11 | 江苏稳润光电有限公司 | A kind of ultraviolet LED method for packing |
| WO2018121103A1 (en) * | 2016-12-30 | 2018-07-05 | 江苏稳润光电有限公司 | Ultraviolet led packaging method |
| CN106816202A (en) * | 2017-02-15 | 2017-06-09 | 山东圣泉新材料股份有限公司 | A kind of Graphene denatured conductive silver paste and preparation method thereof |
| CN106816202B (en) * | 2017-02-15 | 2018-12-04 | 山东圣泉新材料股份有限公司 | A kind of graphene denatured conductive silver paste and preparation method thereof |
| CN106935695A (en) * | 2017-05-17 | 2017-07-07 | 广东工业大学 | A kind of uv-LED device |
| CN108198930A (en) * | 2017-12-29 | 2018-06-22 | 佛山市南海区联合广东新光源产业创新中心 | One kind is easily installed fixed deep ultraviolet LED encapsulation structure |
| CN108321287A (en) * | 2018-03-16 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of deep ultraviolet LED lamp bead inorganic encapsulated structure |
| CN109103319A (en) * | 2018-08-21 | 2018-12-28 | 华中科技大学鄂州工业技术研究院 | A kind of deep ultraviolet LED encapsulation structure and its packaging method |
| CN109411587A (en) * | 2018-12-10 | 2019-03-01 | 邱凡 | A kind of purple LED production method and its purple LED containing silica-gel lens |
| CN109411587B (en) * | 2018-12-10 | 2020-11-27 | 浙江单色电子科技有限公司 | Production method of purple light LED containing silica gel lens and purple light LED |
| CN109786535A (en) * | 2018-12-17 | 2019-05-21 | 旭宇光电（深圳）股份有限公司 | Deep-UV light-emitting device |
| CN110197865A (en) * | 2019-05-14 | 2019-09-03 | 湖北深紫科技有限公司 | A kind of deep ultraviolet LED packaging of liquid-packing and preparation method thereof |
| CN110752282A (en) * | 2019-11-29 | 2020-02-04 | 华引芯（武汉）科技有限公司 | UV LED device with high lighting effect and high reliability and preparation method thereof |
| CN110752282B (en) * | 2019-11-29 | 2024-06-11 | 华引芯（武汉）科技有限公司 | UV LED device with high light efficiency and high reliability and preparation method thereof |
| CN110931625A (en) * | 2019-12-24 | 2020-03-27 | 厦门多彩光电子科技有限公司 | LED packaging method |
| CN111739990A (en) * | 2020-05-20 | 2020-10-02 | 天津中环电子照明科技有限公司 | Ultraviolet LED packaging method and ultraviolet LED packaging |
| CN111739990B (en) * | 2020-05-20 | 2022-08-09 | 天津中环电子照明科技有限公司 | Ultraviolet LED packaging method and ultraviolet LED packaging |
| CN113113524A (en) * | 2021-03-30 | 2021-07-13 | 佛山市国星光电股份有限公司 | Deep ultraviolet LED device and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141210 Termination date: 20180717 |