CN203967503U - Optical module equipment - Google Patents
Optical module equipment Download PDFInfo
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- CN203967503U CN203967503U CN201320891549.5U CN201320891549U CN203967503U CN 203967503 U CN203967503 U CN 203967503U CN 201320891549 U CN201320891549 U CN 201320891549U CN 203967503 U CN203967503 U CN 203967503U
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 84
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 44
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Abstract
The utility model provides optical module equipment.This optical module equipment comprises by length, width and the form factor highly characterizing, and this equipment comprises: strutting piece; The multiple laser diode devices of the numbering that covers this strutting piece from 1 to N, the each Emission Lasers bundle that is constructed in the plurality of laser diode device; There is the free space of non-guiding characteristic, each Emission Lasers bundle that can be from the plurality of laser diode device; And combiner, be constructed to from multiple containing the each reception laser beam the laser diode device of gallium and nitrogen, and provide the output beam being characterized by selected wave-length coverage, selected spectral width, selected power and selected spatial configuration, wherein, this strutting piece is constructed to heat energy to be sent to radiator from the plurality of laser diode device.The utility model makes it possible to obtain a kind of cost-effective Optical devices for laser application, can manufacture Optical devices in relatively simple and cost-effective mode.
Description
The reference of related application
The application requires the U. S. application the 13/732nd that is entitled as " LASER PACKAGE HAVING MULTIPLE EMITTERS CONFIGURED ON A SUPPORTMEMBER (having the laser package that is configured in the multiple reflectors on strutting piece) " of submitting on December 31st, 2012, the priority of No. 233, its disclosure is all incorporated into for all objects that this is for reference.
Technical field
The utility model is usually directed to a kind of laser technology and relevant device.
Background technology
From the laser diode based on GaAs material system, then move on to AlGaAsP and InP material system, there are decades in the direct diode laser of high power.Recently, the superpower laser based on GaN operating within the scope of short-wavelength visible light has become more interesting.More specifically, the laser diode operating in purple, blueness and last green fields is noticeable due to their application in optical storage, display system etc.At present, the high-power laser diode operating in these wave-length coverages is based on polarity c-face GaN.Traditional laser diode based on polar GaN has many application, but unfortunately, this device performance is often insufficient.
Utility model content
The utility model provide the nonpolar or semi-polarity of a kind of use containing gallium substrate such as GaN, AlN, InN, InGaN, AlGaN and AlInGaN etc. with the device of high power transmission electromagnetic radiation.In various execution modes, laser aid comprises the generating laser of many transmitting redness, green or blue electromagnetic radiation, is integrated on substrate or back component (back member).Only pass through example, the utility model can be applied to following application, for example, white illumination, multi-color illumination, plate lighting, medical treatment, metering, laser beam projector and other displays, high-intensity lamp, spectroscopy, amusement, movie theatre, music and concert, analysis fraud detection and/or discriminating, instrument, water treatment, the dazzling device of laser, run-home, communication, transformation, transport, the measurement of the level, curing and other chemical treatments, heating, cutting and/or excision, other Optical devices of pumping, other electrooptical devices and related application and source lighting etc.
In a specific implementations, the utility model provides a kind of optical module equipment (optical module apparatus), it comprises by length, width and the form factor (form factor, form factor) highly characterizing.In an example, this height is by being less than 11mm and being greater than the characterization of size of 1mm, although may there is modification.The multiple laser diode devices (laser diode device) containing gallium and nitrogen of the numbering that this equipment has strutting piece and covers strutting piece from 1 to N.Each laser aid can Emission Lasers bundle, and wherein, N is greater than 1.This transmitting can comprise the green emission of scope from the blue emission of 415 to 485nm wavelength and/or scope from 500 to 560nm wavelength.Be that heat energy is sent to radiator (heat sink) from multiple laser diode devices by support configuration.The free space of this equipment has non-guide features (non-guided characteristic), and it can transmit from multiple laser beams the transmitting of each laser beam.Combiner (combiner) is configured to, receives multiple laser beams of N incoming laser beam from multiple laser diode devices containing gallium and nitrogen.Combiner is used for producing the output beam with selected wave-length coverage, spectral width, power and spatial configuration (spatial configuration), and wherein, N is greater than 1.In an example, combiner is made up of Free Space Optics device (free-space optics), to produce one or more free space beams.At least one incident beam is by being greater than 60% and be less than 100% polarization purity (polarization purity, polarization purity) and characterize.As used herein, term " polarization purity " refers to, is greater than the electromagnetic radiation of 50% transmitting in substantially similar polarization state, for example, transverse electric (TE) or horizontal magnetic (TM) polarization state, still, also can have other implications consistent with its ordinary meaning.In an example, at least the feature of the work optics power output of 5W to 200W is, from the output beam of multiple laser beams.This equipment also has electric inputting interface (electrical input interface), it is constructed to, make electric input power and the coupling of multiple laser diode device, and there is the thermal impedance that is less than 4 degrees Celsius/electrical watt electricity input power (electrical watt of electrical input power), it is characterized in that the hot path from laser aid to radiator.In the time operating in the output power range under the fiducial temperature of 25 degrees Celsius with constant input current, this equipment had and is less than 20% optical output power and reduces in 500 hours.
In an alternative specific implementations, the utility model provides a kind of optical module equipment.This equipment has by length, width and the form factor highly characterizing.In an example, this height is by being less than 11mm and being greater than the characterization of size of 1mm, although may there is modification.In a specific implementations, the multiple laser diode devices containing gallium and nitrogen of the numbering that this equipment has strutting piece and covers strutting piece from 1 to N.Each laser aid can Emission Lasers bundle, and wherein, N is greater than 1.This transmitting comprises the green emission of scope from the blue emission of 415nm to 485nm wavelength and/or scope from 500nm to 560nm wavelength.Be that heat energy is sent to radiator from multiple laser diode devices by support configuration.This equipment has the combiner that is constructed to the multiple laser beams that receive N incoming laser beam.This equipment has by being greater than 60% and be less than at least one incident beam that 100% polarization purity characterizes, although there is modification.This equipment has and comprises at least predetermined nominal operation optics output power range more than 5W.This equipment has electric inputting interface, and it is constructed to, and makes electrical power and the coupling of multiple laser diode device, and has the thermal impedance that is less than 4 degrees Celsius/electrical watt input power, it is characterized in that the hot path from laser aid to radiator.
In another alternate embodiments, the utility model provides a kind of optical module equipment.This equipment has by length, width and the form factor highly characterizing.In an example, this height is by being less than 11mm and being greater than the characterization of size of 1mm, although may there is modification.The multiple laser diode devices containing gallium and nitrogen of the numbering that this equipment has strutting piece and covers strutting piece from 1 to N.Each laser aid can Emission Lasers bundle, and wherein, N is greater than 1.This transmitting comprises the green emission of scope from the blue emission of 415nm to 485nm wavelength and/or scope from 500nm to 560nm wavelength.Each laser diode containing gallium and nitrogen is characterized by surf zone nonpolar or that semi-polarity is directed.In an example, this equipment has the laser region (laser stripe region) that covers nonpolar or semi-polarity surf zone.Each laser region is oriented in the projection of c direction or c direction.In an example, laser region is characterized by first end and the second end.Be that heat energy is sent to radiator from the plurality of laser diode device by support configuration.This equipment has the combiner that is constructed to the multiple laser beams that receive N incoming laser beam.Combiner is used for producing the output beam with selected wave-length coverage, spectral width, power and spatial configuration, and wherein, N is greater than 1.This equipment has by being greater than 60% can reach at least one incident beam that 100% polarization purity characterizes, although may there is modification.In an example, optical module equipment has and comprises at least predetermined nominal operation optics output power range more than 5W.This equipment has electric inputting interface, and it is constructed to, and makes electrical power and the coupling of multiple laser diode device.The feature that is less than the thermal impedance of 4 degrees Celsius/electrical watt input power is the hot path from laser aid to radiator.
In an example, surf zone nonpolar or that semi-polarity is directed is by { 20-21} or { the semi-polarity orientation that 20-2-1} plane characterizes, or the surf zone that alternatively, nonpolar or semi-polarity is directed is by { 30-31} or { the semi-polarity orientation that 30-3-1} plane characterizes.These planes are each may be cut a little or cut in a large number, depend on execution mode.In an example, the surf zone that nonpolar or semi-polarity is directed is the nonpolar orientation being characterized by m plane.In an example, each laser aid can operate in every 1,000,000 (ppm) oxygen comprises the environment of at least 150,000 part.Each laser aid there is no the reduction of oxygen efficiency within a period of time.In an example, each laser aid comprises front and back.
The utility model provides a kind of optical module equipment, comprises by length, width and the form factor highly characterizing, and described equipment comprises: strutting piece; The multiple laser diode devices of the numbering that covers described strutting piece from 1 to N, the each Emission Lasers bundle that is constructed in described multiple laser diode devices; Wherein, at least some in described multiple laser diode device comprise the laser diode device containing gallium and nitrogen, the described laser diode device containing gallium and nitrogen be constructed to transmitting by be selected from have scope from the blue emission of the wavelength of 415nm to 485nm, there is the laser beam that the transmitting of scope from the green emission of the wavelength of 500nm to 560nm and their combination characterizes; And wherein, N is greater than 1; There is the free space of non-guiding characteristic, each Emission Lasers bundle that can be from described multiple laser diode devices; And combiner, be constructed to from multiple containing the each reception laser beam the laser diode device of gallium and nitrogen, and provide the output beam being characterized by selected wave-length coverage, selected spectral width, selected power and selected spatial configuration, wherein: described strutting piece is constructed to, heat energy is sent to radiator from described multiple laser diode devices; Described combiner comprises the Free Space Optics device that is constructed to produce one or more free space beams; Characterized by thermal impedance to the hot path of described radiator from described multiple laser diode devices.
According to equipment of the present utility model, wherein, at least some in described multiple laser diode device comprise AlInGaP laser diode device, and described AlInGaP laser diode device is constructed to transmitting by having the laser beam of scope from the red emission sign of the wavelength of 625nm to 665nm.
According to equipment of the present utility model, wherein, further comprise electric inputting interface, described electric inputting interface is constructed to make the each coupling in electric input power and described multiple laser diode device.
According to equipment of the present utility model, wherein, described strutting piece comprises the material being selected from copper, aluminium, silicon and above-mentioned any combination.
According to equipment of the present utility model, wherein, further comprise the microchannel cooling with described strutting piece thermal coupling.
According to equipment of the present utility model, wherein, be further included in the fin being coupled between described strutting piece and described multiple laser aid.
According to equipment of the present utility model, wherein, further comprise the phosphor material with described output beam optical coupled.
According to equipment of the present utility model, wherein, described phosphor material is constructed to be selected from the pattern operation in the combination of reflective-mode, transmission mode and reflective-mode and transmission mode.
According to equipment of the present utility model, wherein, described phosphor material and optical element or and metal Coupling.
According to equipment of the present utility model, wherein, described phosphor material towards near the selected portion of the spreader region in described strutting piece along Continuous Heat gradient, with described strutting piece thermal coupling.
According to equipment of the present utility model, wherein, further comprise optical coupler, described optical coupler is constructed to, and makes the phosphor material optical coupled of described multiple laser beam and described module device outside.
According to equipment of the present utility model, wherein, described optical coupler comprises one or more optical fiber.
According to equipment of the present utility model, wherein, described output beam is geometrically being constructed to, by with the interaction of phosphor material from the first efficiency optimization to the second efficiency.
According to equipment of the present utility model, further comprise: with the phosphor material of laser beam coupling; And wherein, described combiner is constructed to, provide the output beam being characterized by the selected space pattern with Breadth Maximum and minimum widith.
According to equipment of the present utility model, wherein, described electric inputting interface is constructed to, and makes radio frequency electrical input and described multiple laser diode device couplings.
According to equipment of the present utility model, wherein, described electric inputting interface is constructed to, and makes logical signal and described multiple laser diode device coupling.
According to equipment of the present utility model, wherein, further comprise the submounts member characterizing with the thermal coefficient of expansion (CTE) of described strutting piece and the coupling of described radiator.
According to equipment of the present utility model, wherein, further comprise the one or more submounts members that make described multiple laser diode device and the coupling of described strutting piece.
According to equipment of the present utility model, wherein, described one or more submounts members comprise the material being selected from aluminium nitride, BeO, diamond, diamond synthesis and above-mentioned any combination.
According to equipment of the present utility model, wherein, described one or more submounts members are constructed to, and make described multiple laser diode device and the coupling of described strutting piece.
According to equipment of the present utility model, wherein, further comprise the submounts that is attached to described strutting piece, described submounts is characterized by the thermal conductivity of 200W/ (mk) at least.
According to equipment of the present utility model, wherein, described multiple laser diode devices are directly coupled with described strutting piece direct heat.
According to equipment of the present utility model, wherein, at least a portion of described multiple laser diode devices covers and is selected from the nonpolar orientation surface region containing gallium and nitrogen and semi-polarity containing the orientation surface region in the orientation surface region of gallium and nitrogen.
According to equipment of the present utility model, wherein, described orientation surface region is by { 20-21} or { the semi-polarity orientation that 20-2-1} plane characterizes; And laser region covers described orientation surface region; Wherein, described laser region is with the projection oriented of c direction.
According to equipment of the present utility model, wherein, described orientation surface region is the nonpolar orientation being characterized by m plane; And laser region covers described orientation surface region, wherein, described laser region is with c direction orientation.
According to equipment of the present utility model, wherein, described Free Space Optics device comprises fast axis collimation lens.
According to equipment of the present utility model, further comprise optical fiber, wherein, described output beam is coupling in described optical fiber.
The utility model also provides a kind of optical module equipment, comprises by length, width and the form factor highly characterizing; Described height is by being less than 11mm and being greater than the characterization of size of 1mm, and described equipment comprises: strutting piece; The multiple laser diode devices of the numbering that covers described strutting piece from 1 to N, the each Emission Lasers bundle that is constructed in described multiple laser diode devices; Wherein, at least some in described multiple laser diode device comprise the laser diode device containing gallium and nitrogen, the described laser diode device containing gallium and nitrogen be constructed to transmitting by be selected from have scope from the blue emission of the wavelength of 415nm to 485nm, there is the laser beam that the transmitting of scope from the green emission of the wavelength of 500nm to 560nm and their combination characterizes; And wherein, N is greater than 1; Be constructed to from the wave guide member of described multiple laser optics Emission Lasers bundles; And combiner, be constructed to receive laser beam from described multiple laser diode devices, and the output beam being characterized by selected wave-length coverage, selected spectral width, selected power and selected spatial configuration is provided; Wherein, described strutting piece is constructed to heat energy to be sent to radiator from described multiple laser diode devices; At least one in described laser beam is by being greater than 60% and be less than 100% polarization purity and characterize; Described output beam is characterized by the optics power output of 5W at least; And hot path from described laser aid to radiator is characterized by the thermal impedance that is less than 4 degrees Celsius/electrical watt input power.
The utility model provides again a kind of optical module equipment, comprises by length, width and the form factor highly characterizing; Described height is by being less than 11mm and being greater than the characterization of size of 1mm, and described equipment comprises: strutting piece; The multiple laser diode devices of the numbering that covers described strutting piece from 1 to N, the each Emission Lasers bundle that is constructed in described multiple laser diode devices; Wherein, at least some in described multiple laser diode device comprise the laser diode device containing gallium and nitrogen, the described laser diode device containing gallium and nitrogen is by nonpolar or semi-polarity orientation surface area attribute, and be constructed to transmitting by be selected from have scope from the blue emission of the wavelength of 415nm to 485nm, there is the laser beam that the transmitting of scope from the green emission of the wavelength of 500nm to 560nm and their combination characterizes; And wherein, N is greater than 1; Cover the laser region of nonpolar or semi-polarity surf zone; Wherein, each laser region is with the projection oriented of c direction or c direction, and, characterized by first end and the second end; And combiner, be constructed to receive N multiple laser beams that incident laser is intrafascicular; Described combiner is used for producing the output beam with selected wave-length coverage, spectral width, power and spatial configuration, and wherein, N is greater than 1; Wherein said strutting piece is constructed to heat energy to be sent to radiator from described multiple laser diode devices; At least one in described laser beam is by being greater than 60% and be less than 100% polarization purity and characterize; Described output beam is characterized by the predetermined nominal operation optics output power range of 5W at least; And the hot path from described laser aid to radiator is characterized by the thermal impedance that is less than 4 degrees Celsius/electrical watt input power.
Realize the added advantage that exceedes prior art with the utility model.Especially, the utility model makes it possible to obtain a kind of cost-effective Optical devices for laser application, comprises for the laser bar of projecting apparatus etc.In a specific implementations, can relatively simple and cost-effective mode manufacture these Optical devices.Depend on execution mode, available traditional material is to those skilled in the art manufactured this equipment.This laser aid especially uses the nonpolar or semi-polarity gallium nitride material that can realize purple or blueness or green emitted.In one or more execution modes, laser aid can be launched long wavelength, for example, and the wavelength for the scope of blue wavelength region from about 430nm to 470nm, or, for the extremely wavelength of about 540nm of 500nm of green wavelength region, still, can be other, for example, violet region.Certainly, there is other modification, amendment and substitute.Depend on execution mode, may realize one or more in these benefits.In whole specification, can describe these and other benefits, more particularly, can be described below.
By reference to aft section and the accompanying drawing of specification, can further understand character of the present utility model and advantage.
Brief description of the drawings
Fig. 1 shows according to the reduced graph of the Optical devices of an execution mode of the present utility model.
Fig. 2 is according to the cross-sectional view of the laser aid of an execution mode of the present utility model.
Fig. 3 shows according to the reduced graph of the laser aid with multiple reflectors of an execution mode of the present utility model.
Fig. 4 shows according to the reduced graph of the front view of the laser aid of the multiple cavity parts of having of an execution mode of the present utility model.
Fig. 5 A and Fig. 5 B show the figure towards upper laser package according to " the p side " of an execution mode of the present utility model.
Fig. 6 A and Fig. 6 B show according to the reduced graph of " p side " prone laser package of an execution mode of the present utility model.
Fig. 7 shows according to the reduced graph of the laser package of the addressing distinguished of an execution mode of the present utility model.
Fig. 8 shows according to the reduced graph of the laser bar of the bonded substrates with patterning of an execution mode of the present utility model.
Fig. 9 (a) and Fig. 9 (b) show multiple according to the reduced graph of the laser bar that is configured with optical combiner of execution mode of the present utility model.
Figure 10 is according to the schematic diagram of the laser module with fiber array of an example of the present utility model.
Figure 11 is according to the schematic diagram of the laser module with fibre bundle of an example of the present utility model.
Figure 12 is according to the schematic diagram of the laser module with lens fiber of an example of the present utility model.
Figure 13 is according to the schematic diagram of the free space laser in combination device of an example of the present utility model.
Figure 14 is the schematic diagram of the laser in combination device based on mirror according to the free space of an example of the present utility model.
Figure 15 is according to the schematic diagram of the sealing free space laser module of an example of the present utility model.
Figure 16 is according to the diagram of the substantial connection of the useful life of an example of the present utility model and laser coupled scheme.
Figure 17 is according to the reduced graph of the modular shape factor of an execution mode of the present utility model.
Embodiment
In red and infrared wavelength range, set up well the optical module device in public fiber or medium has been combined and coupled light in the light output from multiple laser chips and/or laser bar.This modular device is for needing the application scenario of very high power (> 10W to > 100W) and/or very high brightness, or the application scenario that can play larger function for remote light sources.In the last few years, the GaN based laser diode of launching within the scope of blue and green wavelength is improving to some extent aspect efficiency, power and useful life.Make these high-performance optical module device blue and green GaN base laser balance sure as key light light source,, in the high brightness of blue light and/or green glow or the application scenario of remote light sources, provide and be greater than 5W to the optical output power that is greater than 50W or 100W or 200W in existing and emerging needs.This application scenario comprises high brightness indicator, illumination, medicine equipment, system of defense etc.
A kind of popular and effective combination from the mode of the light of the reflector in module is, by direct fiber coupling.In this structure, laser chip or laser bar are arranged on carrier, and, will be by first using sealing optics, for example fast axis collimation (FAC) lens, then use fiber, or there is by direct use the fiber being formed at towards the molded lens of the end of laser, the light of transmitting is coupled in fiber.In either case, the place at close laser face by position fibers.The scope of typical fiber size is from 100 μ m to 800 μ m, and has 0.18 or larger NA.In these structures, fiber is usually located near in laser diode face region, and it damages machine-processed susceptibility to optics or other is well-known.Optical fiber will be that about 0.2mm is to about 10mm from the typical range of laser diode face.Although this is a kind of certified for combining the method from the light output of redness or infra-red laser diode,, in the time that fiber makes the blue or green device coupling of the c plane GaN base laser based on traditional, can existent defect.A this shortcoming is that shorten useful life, and can diminish fast from the light output of module.This integrity problem can due to optical surface and particularly fiber end from the surface of emission of laser very close to, and by specific light behavior generation.This device has overcome these and other shortcomings, in whole specification, more particularly, below, has described this device.
The utility model provides for the manufacture of and has used the high power GaN base laser aid of these laser aids.Especially, laser aid is configured to, with 0.5W to 5W or 5W to 20W or 20W to 100W or 200W, or larger power output operation within the scope of blueness or green wavelength.With body, nonpolar or semi-polarity is manufactured laser aid containing gallium and nitrogen substrate.As mentioned above, the output wavelength of laser aid can be in the green wavelength region of the blue wavelength region of 425nm to 475nm and 500nm to 545nm.Also can in the wavelength of for example purple (395nm to 425nm) and blue-green (475nm to 505nm), operate according to the laser aid of execution mode of the present utility model.Can in various application scenarios, use laser aid, for example, carry out the optical projection system of project video content with high power laser light.
Fig. 1 shows the reduced graph of Optical devices.As an example, Optical devices comprise gallium nitride substrate part 101, and it has by semi-polarity or the nonpolar directed lenticular surf zone characterizing.For example, gallium nitride substrate part is by having body GaN substrate nonpolar or that semi-polarity lenticular surf zone characterizes, but can be also other.This body GaN substrate can have lower than 10
5cm
-2or 10
5to 10
7cm
-2surface dislocation density.Element nitride crystal or wafer can comprise Al
xin
yga
1-x-yn, wherein, 0≤x, y, x+y≤1.In a specific implementations, element nitride crystal comprises GaN.In one or more execution modes, GaN substrate with respect to surface substantially orthogonal or tilt direction on, have approximately 10
5cm
-2with approximately 10
8cm
-2between the screw thread dislocation of concentration.In various execution modes, GaN substrate for example, is characterized by nonpolar orientation (, m plane), wherein, make waveguide c direction or substantially with the orthogonal direction of a direction on directed.
In some embodiments, GaN surface direction is substantially { in 20-21} direction, and this device has the laser region that is formed as a part that covers the lenticular orientation surface region of cutting.For example, laser region characterizes by the cavity in the projection of c direction is directed substantially, c direction and a direction perpendicular.In a specific implementations, laser region has first end 107 and the second end 109.In a preferred implementation, have a pair of mirror structure of riving towards each other 20-21} containing gallium and nitrogen substrate on, in the projection of c direction, form this device.
In a preferred implementation, this device has the first splitting surface on the first end that is arranged at laser region, and is arranged at the second splitting surface on the second end of laser region.In one or more execution modes, the first splitting surface and the second splitting surface are substantially parallel.On each splitting surface, form minute surface.The first splitting surface comprises the first minute surface.In a preferred implementation, the line of ruling by top side great-jump-forward and fracture are processed, and the first minute surface is provided.Line is processed can use any suitable technology, for example, and diamond line or laser scribing or its combination.In a specific implementations, first mirror face comprises reflectance coating.Reflectance coating is selected from silicon dioxide, hafnium oxide, titanium dioxide, tantalum pentoxide, zirconia, comprises its combination etc.The first minute surface also can have antireflecting coating.
And in a preferred implementation, the second splitting surface comprises the second minute surface.According to a specific implementations, the line of ruling by top side great-jump-forward and fracture are processed, and the second minute surface is provided.Preferably, this line be diamond line or laser scribing etc.In a specific implementations, the second minute surface comprises reflectance coating, for example, and silicon dioxide, hafnium oxide, titanium dioxide, tantalum pentoxide, zirconia, its combination etc.In a specific implementations, the second minute surface has antireflecting coating.
In a specific implementations, nonpolar, containing on Ga substrate, the feature of this device is the light polarization (polarization) in the direction that is substantially perpendicular to c direction that makes spontaneous emission.In a preferred implementation, the light of this spontaneous emission is greater than 0.1 to approximately 1 polarization than characterizing by vertical with c direction.In a preferred implementation, the light of this spontaneous emission is by the wavelength of the generation blue emission from about 430nm to the scope of about 470nm, or about 500nm is to signs such as the wavelength of the generation green emission of the scope of about 540nm.For example, the light of this spontaneous emission can be (for example, 395 to the 420nm) of purple, blue (for example, 430 to 470nm), green (for example, 500 to 540nm) etc.In a preferred implementation, the only high degree of polarisation of this spontaneous emission, and characterized by the polarization ratio that is greater than 0.4.In another specific implementations, semi-polarity 20-21} is containing on Ga substrate, and the light that the feature of this device still makes spontaneous emission be arranged essentially parallel to a direction or perpendicular to cavity direction on polarization, cavity direction is oriented on the projecting direction of c direction.
In a specific implementations, the utility model provides a kind of replacement device structure, and it can launch light more than 501nm in ridge formula laser execution mode.This device is provided with one or more following epitaxially grown elements:
N-GaN coating, has the thickness from 100nm to 3000nm, has 5E17cm
-3to 3E18cm
-3mix Si grade;
N side sch layer, by having the indium of the molar fraction between 2% and 10% and forming from the InGaN of the thickness of 20nm to 200nm;
Multiple quantum well active region layers, its interval 1.5nm by least two 2.0nm to 8.5nm is above and alternatively until the InGaN quantum well of about 12nm, GaN or InGaN potential barrier composition;
P side sch layer, by have the indium of the molar fraction between 1% and 10% and from the InGaN of the thickness of 15nm to 100nm or GaN guide layer form;
Electronic barrier layer, by having the aluminium of the molar fraction between 6% and 22% and forming from the AlGaN of the thickness of 5nm to 20nm, and is mixed with Mg;
P-GaN coating, has the thickness from 400nm to 1000nm, has 2E17cm
-3to 2E19cm
-3mix Mg grade; And
P++-GaN contact layer, has the thickness from 20nm to 40nm, has 1E19cm
-3to 1E21cm
-3mix Mg grade.
Fig. 2 is the cross-sectional view of laser aid 200.As shown, laser aid comprises gallium nitride substrate 203, and it has lower floor's N-shaped metal back contact region 201.For example, substrate 203 can be by semi-polarity or nonpolar directed sign.This device also has upper strata N-shaped gallium nitride layer 205, active region 207, and structure is as the upper strata p-type gallium nitride layer of laser region 209.Each epitaxial deposition technique, molecular beam epitaxy (MBE) of all using metal organic chemical vapor deposition (MOCVD) in these regions, or other growth technologies that are suitable for GaN growth form.This epitaxial loayer is the high-quality epitaxial loayer that covers N-shaped gallium nitride layer.In some embodiments, this high quality layer doped with, for example, Si or O, to form N-shaped material, have approximately 10
16cm
-3with 10
20cm
-3between doping content.
On substrate, deposit N-shaped Al
uin
vga
1-u-vn layer, wherein, 0≤u, v, u+v≤1.Carrier concn can be in approximately 10
16cm
-3with 10
20cm
-3between scope in.Can carry out deposition with metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
For example, the GaN substrate of body is placed on the susceptor (susceptor) in MOCVD reactor.In sealing, empty and backfill reactor (or working load latch-up structure), make after it reaches atmospheric pressure, in the situation that there is nitrogenous gas, susceptor to be heated to the temperature between approximately 1000 and approximately 1200 DEG C.Under liquefied ammonia, susceptor is heated to approximately 900 to 1200 DEG C.In carrier gas, with the general speed between approximately 1 and 50 standard cubic centimeters/point kind (sccm), introduce containing gallium metal organic precursor, for example, the stream of trimethyl gallium (TMG) or triethyl-gallium (TEG).This carrier gas can comprise hydrogen, helium, nitrogen or argon gas.In growth course, the ratio of the flow velocity of the flow velocity of V family precursor (ammonia) and III family precursor (trimethyl gallium, triethyl-gallium, trimethyl indium, trimethyl aluminium) is approximately 2000 with approximately between 12000.In carrier gas, introduce disilane stream, there is the overall flow rate between about 0.1sccm and 10sccm.
In one embodiment, laser region is p-type gallium nitride layer 209.Provide laser band by dry etching processing, still, also can use wet etching.Dry etching processing is the sense coupling processing that uses chlorine-bearing compound, or uses the active-ion-etch processing of similar chemical substance.This chlorine-bearing compound is derived from chlorine etc. conventionally.This device also has upper strata dielectric regions, and it exposes contact area 213.This dielectric regions is oxide, for example, and silicon dioxide or silicon nitride, and contact area and upper metal layers 215 are coupled.Preferably, this upper metal layers is sandwich construction, and it comprises gold and platinum (Pt/Au), palladium and gold (Pd/Au), or nickel gold (Ni/Au).
Preferably, active region 207 comprises 1 to 10 quantum well region or double-heterostructure region, launches for light.At deposition N-shaped Al
uin
vga
1-u-vn layer, with after reaching expection thickness, deposits active layer.Preferably, this quantum well is InGaN, has GaN, the AlGaN, InAlGaN or the InGaN barrier layer that make its separation.In other embodiments, trap layer and barrier layer comprise respectively Al
win
xga
1-w-xn and Al
yin
zga
1-y-zn, wherein, 0≤w, x, y, z, w+x, y+z≤1, wherein, and w < u, y and/or x > v, z, makes the band gap of one or more trap layers be less than the band gap of one or more barrier layers and N-shaped layer.Trap layer and barrier layer have the thickness between about 1nm and about 20nm separately.Select the Nomenclature Composition and Structure of Complexes of active layer, so that the transmitting of preselected wavelength to be provided.Can not make active layer doping (or not having a mind to adulterate), or it can be N-shaped or p-type doping.
Active region also can comprise electronic blocking region, and the restriction heterostructure separating.Electronic barrier layer can comprise Al
sin
tga
1-s-tn, wherein, 0≤s, t, s+t≤1, has the band gap than active floor height, and, can be p-type doping.In a specific implementations, electronic barrier layer comprises AlGaN.In another embodiment, electronic barrier layer comprises AlGaN/GaN superlattice structure, comprises AlGaN and GaN layer alternately, every layer of thickness having between about 0.2nm and about 5nm.
As noted, p-type gallium nitride structure is deposited on electronic barrier layer and one or more active layer.This p-type layer can be mixed with Mg, is doped into approximately 10
16cm
-3with 10
22cm
-3between grade, there is the thickness between about 5nm and about 1000nm.Can make the outmost 1-50nm of p-type layer adulterate manyly than the remainder of this layer, with electrically contacting of making it possible to be improved.This device also has upper strata dielectric regions, for example, silicon dioxide, it exposes contact area 213.
Hard contact is made up of suitable material, for example, and silver, gold, aluminium, nickel, platinum, rhodium, palladium, chromium etc.Can, by thermal evaporation, electron beam evaporation, plating, sputter or another kind of suitable technology, deposit this contact.In a preferred implementation, electric contact is as the p-type electrode of Optical devices.In another embodiment, electric contact is as the N-shaped electrode of Optical devices.Typically, the above-mentioned laser aid shown in Fig. 1 and Fig. 2 is suitable for relevant low power applications.
In various execution modes, the utility model broadens to many transverse modes scope of 5.0-20 μ m from the single lateral mode scope of 1.0-3.0 μ m by the one or more parts that make laser cavity part, realizes the high-output power from diode laser.In some cases, use and there is the laser diode that width is 50 μ m or larger cavity.
The scope of laser strip length or cavity length is from 300 to 3000 μ m, and uses the U.S. Patent application the 12/759th of for example submitting on April 13rd, 2010, and growth and the manufacturing technology described in No. 273 are incorporated into that this is for reference.As an example, manufacture laser diode in nonpolar or semi-polarity containing on gallium substrate, wherein, with respect to polarity c plane orienting device, substantially eliminate or reduce internal electric field.What should be understood that internal electric field reduces conventionally to make it possible to more effectively recombinate radiation.In addition, expection heavy hole quality is lighter on nonpolar and semi-polarity substrate, makes to realize better gain characteristic from laser.
The difficulty that manufacture has the high power GaN base laser of wide cavity design is such phenomenon: the optical field distribution in a lateral direction of cavity becomes asymmetric in the place with local bright areas and local dark region.This behavior is called silkization conventionally, and can be caused by the cross directional variations in refractive index or heat distribution, and this variation can change mode boot characteristic.This behavior can be also the result of the inhomogeneities in local gain/loss, its by carrier the inhomogeneous injection in active region or electric current assemble and cause, at electric current habitat, preferably, electric current is by the perimeter conducting of laser cavity.That is to say, the electric current injecting by p lateral electrode trends towards the edge of the etched p coating spine/band required towards transversal waveguides, then, and in the place of hole and near main electron recombination band side, downwards conduction.No matter be what reason, this silkization or asymmetrical beam field distribution meeting cause laser activity variation, because strip width is increased.
Fig. 3 shows according to the reduced graph of the laser aid with multiple reflectors of an execution mode of the present utility model.As shown in Figure 3, laser aid comprises substrate and multiple reflector.Lower floor active region and other electronic component of each cavity part in substrate is combined, and is a part for laser diode.Laser aid in Fig. 3 comprises three laser diodes, and each have its reflector or cavity part (for example, cavity part 302 is as the waveguide of laser diode), and shared substrate 301, and it comprises one or more active regions.In various execution modes, active region comprises quantum well or double-heterostructure, launches for light.Cavity part is as waveguide.The device with multiple cavity parts is integrated on a substrate.
Substrate shown in Fig. 3 comprises gallium and nitrogen material, and it is made up of nonpolar or semi-polar body GaN substrate.Cavity part is arranged parallel to each other as shown.For example, cavity part 301 comprises front mirror and rear mirror, similar to the cavity part 101 shown in Fig. 1.Each laser cavity is characterized by the housing width w of scope from approximately 1 to approximately 6 μ m.Cavity part this is arranged in when guaranteeing equably pumping cavity part, increases effective strip width.In one embodiment, cavity part is characterized by the length substantially equating and width.
Depend on application scenario, device of high power laser can have many cavity parts.The scope of the numbering n of cavity part can from 2 to 5,10 or even 20.Make lateral separation that a cavity part separates with another cavity part or the scope of distance from 2 μ m to 25 μ m, depend on the requirement of laser diode.In various execution modes, the scope of the length of cavity part can be from 300 μ m to 2000 μ m, in some cases, and up to 3000 μ m.
In a preferred implementation, generating laser (for example, cavity part as shown) is arranged as to linear array on one single chip, to launch blueness or green laser.Make reflector substantially parallel each other, and, can make it separate 3 μ m to 15 μ m, separate 15 μ m to 75 μ m, separate 75 μ m to 150 μ m, or separate 150 μ m to 300 μ m.The numbering of the reflector in this array can be changed to 15 from 3, or is changed to 30 from 15, is changed to 50 from 30, or is changed to 100 from 50, or is greater than 100.Each reflector can produce 25 to 50mW, and 50 to 100mW, and 100 to 250mW, and 250 to 500mW, and 500 to 1000mW, or is greater than the average output power of 1W.Therefore, the scope with the gross output of the laser aid of multiple reflectors can be from 200 to 500mW, and 500 to 1000mW, 1-2W, and 2-5W, 5-10W, 10-20W, and be greater than 20W.
By this technology, the size of each reflector will have 1.0 to 3.0 μ m, 3.0 to 6.0 μ m, and 6.0 to 10.0 μ m, 10 to 20.0 μ m, 20 to 30 μ m, and be greater than the width of 30 μ m.The scope of length is from 400 μ m to 800 μ m, 800 μ m to 1200 μ m, and 1200 μ m to 1600 μ m, or be greater than 1600 μ m.
Cavity part has front-end and back-end.Laser aid is configured to, by the front mirror Emission Lasers bundle at front end place.Front end can have antireflecting coating or there is no coating at all, passes through mirror thereby allow radiation there is no excessive reflectivity.Because from the not Emission Lasers bundle of rear end of cavity part, so rear mirror is configured to, radiation is reflected back in cavity.For example, rear mirror comprises highly-reflective coating, and it has the reflectivity that is greater than 85% or 95%.
Fig. 4 shows the reduced graph of the front view of the laser aid with multiple cavity parts.As shown in Figure 4, can see active region 307 is positioned in substrate 301.As shown, cavity part 302 comprises path 306.Channel setting, on cavity part, and is for example opened in silicon dioxide at dielectric layer 303.Can regard the top of aisled tool cavity part as laser spine, it exposes electrode 304, for electric contact.Electrode 304 comprises p-type electrode.In a specific implementations, by public p-type electrode deposition on cavity part and dielectric layer 303, as shown in Figure 4.
Make cavity part by electrode 304 electric coupling each other.Laser diode, each have by the electric contact of its cavity part, shares public n lateral electrode.Depend on application scenario, can make the cavity part electric coupling of n lateral electrode and different structure.In a preferred implementation, make public n lateral electrode and the bottom side electric coupling of substrate.In some embodiments, n contact on the top of substrate, and, by etching into dearly substrate from top, then make hard contact deposition downwards, form connection.For example, make laser diode electric coupling each other in parallel construction.In this structure, in the time that electrode is applied to electric current, all laser cavities of relatively equally pumping.In addition,, because spine's width will be relatively narrow, in the scope of 1.0 to 5.0 μ m, for example, so cavity Jian center will approach the edge of spine's (path) very much, make to assemble or non-homogeneous injection reducing electric current.Most important ground, can prevent silkization, and lateral light field distribution can be symmetrical in this narrow cavity, as shown in Figure 2 A.
To understand, the laser aid with multiple cavity parts has effective spine width of n x w, and it can approach the width of traditional superpower laser simply, and this laser has the width of 10 to 50 μ m scopes.The scope of the typical length of this multi-ribbon laser can be from 400 μ m to 2000 μ m, still, and can be up to 3000 μ m.Figure 1 illustrates the schematic diagram of the conventional narrow ridge reflector of wall scroll band, the low power applications that it is intended to for 5 to 500mW, has the distribution of the lateral symmetry field producing in Fig. 2.Figure 2 illustrates the schematic diagram of multi-ribbon reflector, as an example, this execution mode is intended to the operand power for 0.5 to 10W.
Laser aid shown in Fig. 3 and Fig. 4 has very large range of application.For example, this laser aid can with Electric source coupling, and work under 0.5 to 10W power level.In some applications, power supply is configured to especially, under the power level that is greater than 10W, works.The operating voltage of laser aid can be less than 5V, 5.5V, 6V, 6.5V, 7V and other voltage.In various execution modes, wall socket efficiency (for example, total electrical-optical power efficiency) can be 15% or larger, 20% or larger, 25% or larger, 30% or larger, 35% or larger.
The one typical case application of laser aid is to launch single beam laser.Because laser aid comprises many reflectors, so, need optical element to combine or calibrate the output from reflector.Fig. 5 A and Fig. 5 B show " p side " figure towards upper laser package.As shown in Figure 5A, laser bar is arranged on submounts (submounts, heat sink, submount).Laser bar comprises transmitter array (for example, as shown in Figure 3 and Figure 4).Laser bar is attached to submounts, and it is positioned between laser bar and radiator.Should be understood that submounts allows laser bar (for example, gallium nitride material) to be attached to securely radiator (for example, having the copper product of high thermal emissivity).In various execution modes, submounts comprises the aluminium nitride material being characterized by high heat conductance.The thermal conductivity of the aluminium nitride material for example, using in submounts can exceed 200W/ (mk).Also can use the material of other types to submounts, for example, diamond, copper-tungsten, beryllium oxide.In a preferred implementation, compensate not mating of thermal coefficient of expansion (CTE) between laser bar and radiator with submounts material.
In Fig. 5 A, " the p side " of laser bar (that is, having a side of reflector) be towards upper, therefore, and with not electric coupling of submounts.Make the p side of laser bar and the anode of power supply by many bonding wire electric couplings.Because submounts and radiator all conduct electricity, so, can make the cathode electrode of power supply by the opposite side electric coupling of submounts and radiator and laser bar.
In a preferred implementation, manufacture the transmitter array of laser bar with gallium nitride substrate.Substrate can have by semi-polarity or the nonpolar directed surface characterizing.Gallium nitride material allows the non-hermetic laser aid that encapsulates hermetically.More particularly, by using gallium nitride material, laser bar there is no AlGaN or InAlGaN coating.When reflector is during substantially close to p-type material, laser aid there is no p-type AlGaN or p-type InAlGaN material.Typically, in the time operating in standard atmospheric pressure, AlGaN or InAlGaN coating are unsettled, because it can interact with oxygen.For head it off, the traditional laser aid that comprises AlGaN or InAlGaN material is sealed airtightly, to prevent the interaction between AlGaN or InAlGaN and air.On the contrary, due to according to not having AlGaN or InAlGaN coating in the laser aid of execution mode of the present utility model, so, do not need to encapsulate airtightly laser aid.By eliminating the demand to level Hermetic Package, manufacturing can be lower than the cost of conventional laser device according to the cost of the laser aid of execution mode of the present utility model and encapsulation.
Fig. 5 B is the end view of the laser aid shown in Fig. 5 A.Laser bar is arranged on submounts, and submounts is arranged in hot side.As mentioned above, because laser bar comprises many reflectors, so, combine launched laser with collimating lens, to form required laser beam.In a preferred implementation, collimating lens is fast axis collimation (FAC) lens that characterized by cylinder form.
Fig. 6 A and Fig. 6 B show according to the reduced graph of " p side " prone laser package of an execution mode of the present utility model.In Fig. 6 A, laser bar is arranged on submounts.Laser bar comprises transmitter array (for example, as shown in Figure 3 and Figure 4).In a preferred implementation, laser bar comprises by semi-polarity or the nonpolar directed substrate characterizing.Laser bar is attached to submounts, and it is positioned between laser bar and radiator." p side " (that is, having a side of reflector) of laser bar faces down, and therefore, directly couples with submounts.Make the p side of laser bar and the anode of power supply by submounts and/or radiator electric coupling.The opposite side of laser bar is coupled by the cathodic electricity of many bonding wires and power supply.
Fig. 6 B is the end view of the laser aid shown in Fig. 6 A.As shown, laser bar is arranged on submounts, and submounts is arranged in hot side.As explained above, because laser bar comprises many reflectors, so, combine launched laser with collimating lens, to form required laser beam.In a preferred implementation, this collimating lens is fast axis collimation (FAC) lens that characterized by cylinder form.
Fig. 7 shows according to the reduced graph of the laser package of the addressing distinguished of an execution mode of the present utility model.Laser bar comprises many reflectors that separated by ridge-like structure.Each reflector is characterized by the width of about 90-200 μ m, however, it should be understood that, other sizes are also fine.Each generating laser comprises the liner for p contact wire bond.For example, can make electrode couple with reflector respectively, make optionally to switch on and off reflector.The structure of the addressing respectively shown in Fig. 7 provides many benefits.For example, can not distinguish addressing if there is the laser bar of multiple reflectors, the bending of laser bar in manufacture process can be a problem so, because it is good that many independent laser aids all need, so that laser bar can be passed through, and, this means, laser bar bending is by less the reflector bending than independent.In addition, the laser bar with single-shot emitter addressability being set makes to shield each reflector.In some embodiments, make control module and laser electric coupling, to control respectively the device of laser bar.
Fig. 8 shows according to the reduced graph of the laser bar of the bonded substrates with patterning of an execution mode of the present utility model.As shown, laser aid is characterized by the width of approximately 30 μ m.Depend on application scenario, other width are also fine.The generating laser with the spacing that is less than approximately 90 μ m is difficult to form wire bond.In various execution modes, form contact by the bonded substrates of patterning.For example, the bonded substrates of this patterning allows width to be low to moderate 10-30 μ m.
Fig. 9 (a) and Fig. 9 (b) show according to the reduced graph of the laser bar that is configured with optical combiner of execution mode of the present utility model.As shown, this figure comprises encapsulation or the shell for multiple reflectors.On single ceramic or the multiple chips on pottery, construct each device, it is arranged on public radiator.As shown, this encapsulation comprises that all optics couplings freely, collimater, mirror, space or polarization are multiplexed, exports or again focus on fiber or other waveguide mediums for free space.As an example, this encapsulation has little distribution, and can comprise flat packaging ceramic multilayer or individual layer.This layer can comprise copper, copper tungsten base, and for example, butterfly encapsulates or has CT subrack, the Q subrack etc. of lid.In a specific implementations, the material (for example, AlN, diamond, diamond compound) that laser aid is welded on to the CTE coupling with low thermal resistance is upper, and on pottery, forms son assembling chip.Then, son is assembled to chip and be assemblied in together on second material with low thermal resistance, for example copper, comprises, for example, and active cooling (, simple water channel or microchannel), or the direct base that forms the encapsulation that is equipped with for example pin of all connections.This flat packaging is equipped with optical interface, for example, and connector or the fiber of the light that window, Free Space Optics device, guiding produce, and the lid of environmental protection property.
Figure 10 is the example of the laser module that couples with fiber array.Each reflector from laser bar is coupled in fiber array by fast axis collimation (FAC) lens respectively.In this structure, fiber near laser diode chip, typically, 0.2 to 10mm.
Figure 11 is the example with the laser module of fibre bundle.After coupling calibration by fast axis collimation (FAC) lens and fiber, fiber is banded together in end.In this structure, fiber is positioned near of laser diode chip, typically, 0.5 to 10mm.
Figure 12 is the example with the laser module of lens fiber.In this structure, with lens fiber and laser diode direct-coupling, do not comprise fast axis collimation (FAC) lens.In this structure, fiber is positioned near of laser diode chip, typically, 0.2 to 2mm.
In an example, the utility model provides a kind of alternative optical coupled technology that makes to export from the optics of each reflector in optical module or laser bar combination.By first using Free Space Optics device that all optics output is combined in one or more free space laser beams, then make one or more free space laser beams directly be coupled with this application, or with then by with the coupling fiber of this application coupling, will avoid the degradation mechanism relevant to direct fiber coupling.In this structure, by fiber orientation in respect to compare Yuan position, laser diode face region (10 to 100mm).As a result, the free space coupling optical module of transmitting blue light or green glow can have longer useful life, working reliably.
Figure 13 is the example of free space laser in combination device.In this structure, make the laser beam datum from locating the transmitting of good laser diode, and be coupled with Free Space Optics device.Then, this laser beam or multiple laser beam are concentrated on and be positioned at photoconduction at a distance for example in fiber.This free space structure keeps fiber coupling away from laser diode chip.
Figure 14 is the example of the laser in combination device of free space based on mirror.First, make each laser beam by Free Space Optics device for example, fast axis collimation (FAC) and slow axis collimation (SAC) collimated.Next, make the laser beam incident of collimation on rotational mirror, the direction of laser beam is changed to 90 degree.In single light beam, be then coupling in for example laser diode light beam array in fiber of photoconduction and carry out this operation for being combined in.
Figure 15 is the example of sealing free space laser module.Compact plug and play designs very flexibly and is easy to and uses.
Figure 16 shows the substantial connection of useful life and laser coupled scheme.Avoid direct fiber coupling (solid line) by adopting free space coupling (dotted line) method, the speed of demoting effectively suppress in, make, exceeding 5W, exceed 10W, exceed 30W, or exceed under the power output of 60W, within the operating time of 500 hours, can be less than 20% degradation.
Figure 17 is according to the reduced graph of the modular shape factor of an execution mode of the present utility model.As shown, the figure shows the optical module being formed by laser diode chip and how can sharply reduce form factor and thickness, make it than traditional light source based on lamp, or even form factor and the thickness of laser diode based on TO-tank (TO-can) array are little.Thickness this reduces to make it possible to produce less, the CE product of compacter form factor, for example, displaying projector.This less form factor is our integrated unpredictable consequence.In whole specification, can find other details of native system.
In an alternate embodiments of the present utility model, in module, use nonpolar or semi-polarity GaN based laser diode.Due to the rive reason of plane of the alternative facet in this laser based on nonpolar/semi-polarity orientation, and do not comprise the waveguide design possibility of AlGaN coating, this laser diode can with direct fiber coupling compatibility, the quick degradation that does not have traditional c plane device to confirm.
In an alternate embodiments, the utility model provides a kind of optical module device, and it makes the transmitting combination of N laser beam, and wherein, N is greater than 1.This optical combination comprises, produces the Free Space Optics device of one or more free space beams.This optical emitting is included in the blue emission in 415nm to 485 nm wave-length coverage, and/or green emission in 500nm to 560nm wave-length coverage.Comprise that optical module device, with exceeding 5W, exceedes 20W, or exceed under 50W and operate.Optical module device is reduced to characterize by the optics power output that was less than 20% under constant input current in the time operating in 500 hours.
In some embodiments, the optical module that present disclosure provides comprises the numbering that the covers strutting piece multiple laser diode devices from 1 to N, by the each Emission Lasers bundle that is configured in the plurality of laser diode device.Laser diode device can comprise transmitting violet region (390-430nm), blue region (430nm to 490nm), green area (490nm to 560nm), yellow area (560nm to 600nm), or the device of the electromagnetic spectrum of red area (625nm to 670nm).Optical module can comprise the combination of the laser diode device of the different piece of launching electromagnetic spectrum.In some embodiments, select the combination of laser diode, to produce the output radiation of the combination with required Wavelength distribution.In some embodiments, this array output can be white light output.Laser diode device can be based on different semiconductor technology, for example, containing device or the AlInGa of gallium and nitrogen, although also can use other suitable technology.In some embodiments, at least some of the plurality of laser diode device comprise the laser diode device containing gallium and nitrogen, be configured to transmitting and there is the blue emission of scope from the wavelength of 415nm to 485nm by being selected from, there is the green emission of scope from the wavelength of 500nm to 560nm, and combination in transmitting characterize laser beam.In some embodiments, at least some of the plurality of laser diode device comprise AlInGaP laser diode device, are configured to transmitting by having the laser beam of scope from the red emission sign of the wavelength of 625nm to 670nm.
In a specific implementations, can in various application scenarios, use this encapsulation.These application scenarios comprise that power calibration (modularization possibility), spectrum widens (selection has the laser of small wavelength shift, to obtain wider spectral characteristic).This application also can comprise that polychrome monolithic is integrated, for example, and blueness-blueness, blueness-green, RGB (redness-blueness-green) etc.
In a specific implementations, this laser aid can be configured in multiple encapsulation.As an example, this encapsulation comprises TO9 tank (Can), TO56 tank, one or more flat packaging, CS subrack, G subrack, C subrack, the cooling encapsulation in one or more microchannels etc.In other examples, multi-laser structure can have 1.5W, 3W, 6W, 10W and larger operand power.In an example, these Optical devices (comprising multiple reflectors) are without any optical combiner, and this can cause efficiency low.In other examples, can comprise optical combiner, and be configured to have multiple emitter apparatus.In addition, the plurality of laser aid (, reflector) can especially be configured in the laser aid array in the GaN of nonpolar orientation or the GaN of semi-polarity orientation or its any combination.
As used herein, term GaN substrate is associated with the material based on III group-III nitride, comprises GaN, InGaN, AlGaN or other alloys that comprises III family or the composition as starting material.(this starting material comprises polar GaN substrate, nominally the surface of maximum area is that (h k is the substrate of plane l), wherein, h=k=0, and, l is not zero), non-polar GaN substrate (, make the surface of maximum area from above-mentioned polarity orientation towards (h k is the plane backing material of orientation at a certain angle l), the scope of this angle is from approximately 80 to 100 degree, wherein, l=0, and, at least one in h and k is not zero), or semi-polarity GaN substrate (, make the surface of maximum area from above-mentioned polarity orientation towards (h k is the plane backing material of orientation at a certain angle l), the scope of this angle from approximately+0.1 to 80 degree, or from 110 to 179.9 degree, wherein, l=0, and, at least one in h and k is not zero).Certainly, can there is other modification, change and substitute.
In other examples, can comprise at least 150, in the environment of the oxygen of 000ppm, operate this device.This laser aid there is no AlGaN or InAlGaN coating.This laser aid there is no p-type AlGaN or p-type InAlGaN coating.Each reflector comprises front and back, before there is no coating.Each reflector comprises front and back, after comprise reflectance coating.In other examples, this device also has the microchannel cooling with substrate thermal coupling.This device also has the submounts of thermal coefficient of expansion (CTE) sign being associated with substrate and radiator.Submounts and substrate couple, and this submounts comprises aluminium nitride material, BeO, diamond, diamond synthesis (composite diamond) or its combination.In a specific implementations, substrate is bonded on submounts, this submounts is characterized by the thermal conductivity of 200W/ (mk) at least.Substrate comprises one or more cladding regions.These one or more optical elements comprise fast axis collimation lens.Laser aid is characterized by the spectral width of 4nm at least.In a particular instance, the scope of the quantity N of reflector, between 3 and 15,15 and 30,30 and 50, and can be greater than 50.In other examples, each average output power of 25 to 50mW that produces in this N reflector, produce 50 to 100mW average output power, produce 100 to 250mW average output power, produce 250 to 500mW average output power, or produce 500 to 1000mW average output power.In a particular instance, the each average output power that is greater than 1W that produces in this N reflector.In an example, each spaced 3 μ m to the 15 μ m in this N reflector, or spaced 15 μ m to 75 μ m, or spaced 75 μ m to 150 μ m, or spaced 150 μ m to 300 μ m.
In another alternative specific implementations, the utility model provides a kind of Optical devices, for example, and laser.This device comprises the material containing gallium and nitrogen with surf zone, and the semi-polarity surface orientation in 5 degree of of this surf zone by following (10-11), (10-1-1), (20-21), (20-2-1), (30-31), (30-3-1), (40-41) or (40-4-1) characterizes.This device also has structure first wave guide region in a first direction, and in a specific implementations, first direction is the projection that covers the c direction of the surf zone of the material that contains gallium and nitrogen.This device also has the second waveguide region, and itself and first wave guide region are coupled, and are configured in the second direction of the surf zone that covers the material that contains gallium and nitrogen.In a preferred implementation, second direction is different from first direction, and is arranged essentially parallel to a direction.In a preferred implementation, the first and second waveguide regions are continuous, and are formed as single continuous waveguiding structure, and, in the manufacture process of waveguide, be formed together.Certainly, can there is other modification, change and substitute.
In an example, this equipment has the strutting piece by copper product, aluminum, silicon materials or combinations thereof.In an example, make microchannel cooling and strutting piece thermal coupling.In an example, fin (heat spreader) is coupled between strutting piece and laser aid.
In an example, phosphor material (phosphate material, phosphor material) is set in module device, particularly with laser beam optical coupled.In an example, phosphor material and multiple laser beam interact optically.Phosphor material is with operations such as reflective-mode, transmission mode or its combinations.Phosphor material is positioned in the light path with optical element or metal or other materials coupling.Make phosphor material along Continuous Heat gradient, towards near the selected portion of the spreader region in strutting piece, with strutting piece thermal coupling.This equipment also has the optical coupled of the phosphor material of multiple laser beams and module device outside.In an example, guide multiple laser beams, make it pass through optical fiber, to be coupled with phosphor material.Output beam is geometrically being configured to, and the interaction of optimization and phosphorus, for example, improves the efficiency of phosphor-converted process.In an example, phosphor material and multiple laser beam and combiner coupling, to produce the output of the selected space pattern with Breadth Maximum and minimum widith.
In an example, this equipment has electric inputting interface, is configured to, and makes radio frequency electrical input and multiple laser aid couplings.Electric inputting interface is configured to, makes logical signal and the coupling of multiple laser aid.
In an example, this equipment has the submounts member being characterized by the thermal coefficient of expansion (CTE) being associated with strutting piece and radiator.In an example, submounts member makes N laser aid and strutting piece coupling.Submounts member is made up of following material, and it comprises at least one in aluminium nitride, BeO, diamond, diamond synthesis or its combination.N laser aid and strutting piece are coupled with submounts member.In an example, submounts is bonded on strutting piece.In an example, submounts is characterized by the thermal conductivity of 200W/ (mk) at least.In an example, laser aid is directly coupled with strutting piece direct heat.In an example, at least a portion of N laser aid is configured on nonpolar or the orientation surface region of semi-polarity containing gallium and nitrogen.
In an example, the surf zone that nonpolar or semi-polarity is directed is by { 20-21} or { the semi-polarity orientation that 20-2-1} plane characterizes.Laser region covers semi-polarity surf zone; Wherein, laser region is oriented in the projection of c direction.In an example, surf zone nonpolar or that semi-polarity is directed is the nonpolar orientation being characterized by m plane, and laser region covers apolar surfaces region; Wherein, laser region is oriented in c direction.In an example, make multiple laser beams optical coupled in multiple optical fiber respectively.Multiple optical fiber is optically coupled to one another, so that the plurality of laser beam is combined into at least one output beam.This output beam is coupled in optical fiber.In an example, output beam is characterized by the wide spectral width of 4nm at least; Wherein, the scope of N is between 3 and 50, and output beam is characterized by the narrow spectral width that is less than 4nm; Wherein, the scope of N is between 3 and 50.In an example, each 10 to 1000mW the average output power that produces in N reflector.In an example, each 1 to 5W the average output power that produces in N reflector.Optical module equipment is by 10W and larger, and 50W and larger, or 100W and larger, or 200W and greater or lesser power output sign, although can exist modification.In an example, the feature that is less than the thermal impedance of 2 degrees Celsius of/watt electric input powers is the hot path from laser aid to radiator.In an example, the thermal impedance feature that is less than 1 degree Celsius of/watt electric input power is the hot path from laser aid to radiator.In an example, when operate optical module equipment under rated output power time, (under the fiducial temperature of 25 DEG C, there is constant input current), in 2000 hours, provide to be less than 20% optics power output and to reduce.In an example, when operate optical module equipment under rated output power time, (under the fiducial temperature of 25 DEG C, there is constant input current), in 5000 hours, provide to be less than 20% optics power output and to reduce.Depend on execution mode, height by be less than 7mm characterize, or height by be less than 4mm characterize, or height by be less than 2mm characterize.
In some embodiments, optical module equipment comprises by length, width and the form factor highly characterizing; Height is by being less than 11mm and being greater than the characterization of size of 1mm, and this equipment comprises: strutting piece; The multiple laser diode devices of the numbering that covers strutting piece from 1 to N, by the each Emission Lasers bundle that is configured in the plurality of laser diode device; Wherein, at least some in the plurality of laser diode device comprise the laser diode device containing gallium and nitrogen, be configured to transmitting and there is the blue emission of scope from the wavelength of 415nm to 485nm by being selected from, there is the green emission of scope from the wavelength of 500nm to 560nm, and combination in transmitting characterize laser beam; And wherein, N is greater than 1; There is the free space of non-guiding characteristic, each Emission Lasers bundle that can be from the plurality of laser diode device; And combiner, be configured to, each reception laser beam from the plurality of laser diode device that contains gallium and nitrogen, and provide the output beam being characterized by selected wave-length coverage, selected spectral width, selected power and selected spatial configuration, wherein: be that heat energy is sent to radiator from the plurality of laser diode device by support configuration; Combiner comprises Free Space Optics device, is configured to, and produces one or more free space beams; At least one laser beam is by being greater than 60% and be less than 100% polarization purity and characterize; Output beam is characterized by the work optics power output of 5W at least; The hot path from the plurality of laser diode device to radiator being characterized by the thermal impedance that is less than 4 degrees Celsius/electrical watt electricity input power feature; And optical module equipment is by when the operating optical module device in optics power output (having constant input current under the fiducial temperature of 25 DEG C), in 500 hours, is less than 20% optics power output and reduces to characterize.
In some execution modes of optical module equipment, at least some in the plurality of laser diode device comprise AlInGaP laser diode device, are configured to transmitting by having the laser beam of scope from the red emission sign of the wavelength of 625nm to 665nm.
In some embodiments, optical module equipment further comprises electric inputting interface, is configured to, and makes the each coupling in electric input power and the plurality of laser diode device.
In some execution modes of optical module equipment, power output is from 5W to 200W.
In some execution modes of optical module equipment, each in the plurality of laser diode device can comprise at least 150, in the environment of the oxygen of 000ppm, operates; Wherein, each there is no within a period of time from the efficiency of oxygen in the plurality of laser diode device reduces.
In some execution modes of optical module equipment, strutting piece comprises the material being selected from copper, aluminium, silicon and above-mentioned any combination.
In some embodiments, optical module equipment further comprises and the microchannel cooling of strutting piece thermal coupling.
In some embodiments, optical module equipment is further included in the fin being coupled between strutting piece and the plurality of laser aid.
In some embodiments, optical module equipment further comprises and the phosphor material of output beam optical coupled.
In some execution modes of optical module equipment, phosphor material is configured to, to be selected from reflective-mode, transmission mode, and the operation of pattern in the combination of reflective-mode and transmission mode.
In some execution modes of optical module equipment, make phosphor material and optical element or and metal Coupling.
In some execution modes of optical module equipment, make phosphor material along Continuous Heat gradient, towards near the selected portion of the spreader region in strutting piece, with strutting piece thermal coupling.
In some embodiments, optical module equipment further comprises optical coupler, is configured to, and makes the phosphor material optical coupled of the plurality of laser beam and module device outside.
In some execution modes of optical module equipment, optical coupler comprises one or more optical fiber.
In some execution modes of optical module equipment, output beam is geometrically being configured to, by with the interaction of phosphor material from the first efficiency optimization to the second efficiency.
In some embodiments, optical module equipment further comprises the phosphor material with laser beam coupling, and wherein, combiner is configured to, and the output beam being characterized by the selected space pattern with Breadth Maximum and minimum widith is provided.
In some execution modes of optical module equipment, electric inputting interface is configured to, make radio frequency electrical input and the plurality of laser diode device coupling.
In some execution modes of optical module equipment, electric inputting interface is configured to, make logical signal and the coupling of the plurality of laser diode device.
In some embodiments, optical module equipment further comprises by the submounts member characterizing with the thermal coefficient of expansion (CTE) of strutting piece and radiator coupling.
In some embodiments, optical module equipment further comprises one or more submounts members, and it makes the plurality of laser diode device and strutting piece coupling.
In some execution modes of optical module equipment, these one or more submounts members comprise the material being selected from aluminium nitride, BeO, diamond, diamond synthesis or above-mentioned any combination.
In some execution modes of optical module equipment, these one or more submounts members are configured to, make the plurality of laser diode device and strutting piece coupling.
In some embodiments, optical module equipment further comprises the submounts that is attached to strutting piece, and submounts is characterized by the thermal conductivity of 200W/ (mk) at least.
In some execution modes of optical module equipment, make the plurality of laser diode device directly and the coupling of strutting piece direct heat.
In some execution modes of optical module equipment, at least a portion of the plurality of laser diode device covers the orientation surface region being selected from the orientation surface region that the nonpolar orientation surface region containing gallium and nitrogen and semi-polarity contain gallium and nitrogen.
In some execution modes of optical module equipment, orientation surface region is by { 20-21} or { the semi-polarity orientation that 20-2-1} plane characterizes; And laser region covers this orientation surface region; Wherein, laser region is oriented in the projection of c direction.
In some execution modes of optical module equipment, orientation surface region is the nonpolar orientation being characterized by m plane; And laser region covers this orientation surface region, wherein, laser region is oriented in c direction.
In some execution modes of optical module equipment, Free Space Optics device comprises fast axis collimation lens.
In some embodiments, optical module equipment further comprises optical fiber, wherein, output beam is coupled in optical fiber.
In some execution modes of optical module equipment, output beam is characterized by the spectral width of 4nm at least, and the scope of N is from 3 to 50.
In some execution modes of optical module equipment, output beam is characterized by the spectral width that is less than 4nm, and the scope of N is from 3 to 50.
In some execution modes of optical module equipment, the each laser beam being characterized by the average output power from 10mW to 1000mW of launching in the plurality of laser diode device.
In some execution modes of optical module equipment, the each laser beam being characterized by the average output power from 1W to 5W of launching in the plurality of laser diode device.
In some execution modes of optical module equipment, power output is selected from 10W and larger, 50W and larger, and 100W and larger.
In some execution modes of optical module equipment, thermal impedance is less than 2 degrees Celsius of/watt electric input powers.
In some execution modes of optical module equipment, thermal impedance is less than 1 degree Celsius of/watt electric input power.
In some execution modes of optical module equipment, in the time of operating optical module device in power output, (under the fiducial temperature of 25 DEG C, there is constant input current), in 2000 hours, optics power output reduce to be less than 20%.
In some execution modes of optical module equipment, in the time of operating optical module device in power output, (under the fiducial temperature of 25 DEG C, there is constant input current), in 5000 hours, optics power output reduce to be less than 20%.
In some embodiments, optical module equipment comprises by length, width and the form factor highly characterizing; Height is by being less than 11mm and being greater than the characterization of size of 1mm, and this equipment comprises: strutting piece; The multiple laser diode devices of the numbering that covers strutting piece from 1 to N, by the each Emission Lasers bundle that is configured in the plurality of laser diode device; Wherein, at least some in the plurality of laser diode device comprise the laser diode device containing gallium and nitrogen, by this laser diode device containing gallium and nitrogen be configured to transmitting by be selected from have scope from the blue emission of the wavelength of 415nm to 485nm, there is the laser beam that the transmitting of scope from the green emission of the wavelength of 500nm to 560nm and their combination characterizes; And wherein, N is greater than 1; Wave guide member, is configured to, from the plurality of laser optics Emission Lasers bundle; And combiner, be configured to, receive laser beam from the plurality of laser diode device, and the output beam being characterized by selected wave-length coverage, selected spectral width, selected power and selected spatial configuration is provided; Wherein: be that heat energy is sent to radiator from the plurality of laser diode device by support configuration; At least one laser beam is by being greater than 60% and be less than 100% polarization purity and characterize; Output beam is characterized by the optics power output of 5W at least; And hot path from this laser aid to radiator is characterized by the thermal impedance that is less than 4 degrees Celsius/electrical watt input power.
In some embodiments, optical module equipment comprises by length, width and the form factor highly characterizing; Height is by being less than 11mm and being greater than the characterization of size of 1mm, and this equipment comprises: strutting piece; The multiple laser diode devices of the numbering that covers strutting piece from 1 to N, by the each Emission Lasers bundle that is configured in the plurality of laser diode device; Wherein, at least some in the plurality of laser diode device comprise the laser diode device containing gallium and nitrogen, should be characterized by surf zone nonpolar or that semi-polarity is directed containing laser diode device of gallium and nitrogen, and be constructed to transmitting by be selected from have scope from the blue emission of the wavelength of 415nm to 485nm, there is the laser beam that the transmitting of scope from the green emission of the wavelength of 500nm to 560nm and their combination characterizes; And wherein, N is greater than 1; Cover the laser region of nonpolar or semi-polarity surf zone; Wherein, each laser region is oriented in the projection of c direction or c direction, and, characterized by first end and the second end; And combiner, this combiner is constructed to, and receives N multiple laser beams that incident laser is intrafascicular; Combiner is used for producing the output beam with selected wave-length coverage, spectral width, power and spatial configuration, and wherein, N is greater than 1; Wherein, by support configuration be, heat energy is sent to radiator from the plurality of laser diode device; At least one laser beam is by being greater than 60% and be less than 100% polarization purity and characterize; Output beam is characterized by the predetermined nominal operation optics output power range of 5W at least; And the hot path from laser aid to radiator is characterized by the thermal impedance that is less than 4 degrees Celsius/electrical watt input power.
Although be more than whole descriptions of specific implementations,, can use various changes, alternative structure and equivalent.Therefore, above description and explanation should not be regarded as limiting scope of the present utility model, and it is limited by appended claims.
Claims (29)
1. an optical module equipment, comprises by length, width and the form factor highly characterizing, and described equipment comprises:
Strutting piece;
The multiple laser diode devices of the numbering that covers described strutting piece from 1 to N, the each Emission Lasers bundle that is constructed in described multiple laser diode devices; It is characterized in that, at least some in described multiple laser diode device comprise the laser diode device containing gallium or nitrogen, the described laser diode device containing gallium or nitrogen be constructed to transmitting by be selected from have scope from the blue emission of the wavelength of 415nm to 485nm, there is the laser beam that the transmitting of scope from the green emission of the wavelength of 500nm to 560nm and their combination characterizes; And wherein, N is greater than 1;
There is the free space of non-guiding characteristic, each Emission Lasers bundle that can be from described multiple laser diode devices; And
Combiner, is constructed to the each reception laser beam from multiple laser diode devices that contain gallium or nitrogen, and the output beam being characterized by selected wave-length coverage, selected spectral width, selected power and selected spatial configuration is provided, wherein:
Described strutting piece is constructed to heat energy to be sent to radiator from described multiple laser diode devices;
Described combiner comprises the Free Space Optics device that is constructed to produce one or more free space beams;
Characterized by thermal impedance to the hot path of described radiator from described multiple laser diode devices.
2. equipment according to claim 1, it is characterized in that, at least some in described multiple laser diode device comprise AlInGaP laser diode device, and described AlInGaP laser diode device is constructed to transmitting by having the laser beam of scope from the red emission sign of the wavelength of 625nm to 665nm.
3. equipment according to claim 1, is characterized in that, further comprises electric inputting interface, and described electric inputting interface is constructed to make the each coupling in electric input power and described multiple laser diode device.
4. equipment according to claim 1, is characterized in that, described strutting piece comprises the material being selected from copper, aluminium or silicon.
5. equipment according to claim 1, is characterized in that, further comprises the microchannel cooling with described strutting piece thermal coupling.
6. equipment according to claim 1, is characterized in that, is further included in the fin being coupled between described strutting piece and described multiple laser aid.
7. equipment according to claim 1, is characterized in that, further comprises the phosphor material with described output beam optical coupled.
8. equipment according to claim 7, is characterized in that, described phosphor material is constructed to be selected from the pattern operation in the combination of reflective-mode, transmission mode and reflective-mode and transmission mode.
9. equipment according to claim 7, is characterized in that, described phosphor material and optical element or and metal Coupling.
10. equipment according to claim 7, is characterized in that, described phosphor material towards near the selected portion of the spreader region in described strutting piece along Continuous Heat gradient, with described strutting piece thermal coupling.
11. equipment according to claim 1, is characterized in that, further comprise optical coupler, and described optical coupler is constructed to, and make the phosphor material optical coupled of described multiple laser beam and described module device outside.
12. equipment according to claim 11, is characterized in that, described optical coupler comprises one or more optical fiber.
13. equipment according to claim 1, is characterized in that, described output beam is geometrically being constructed to, by with the interaction of phosphor material from the first efficiency optimization to the second efficiency.
14. equipment according to claim 1, further comprise:
Phosphor material with described laser beam coupling; And
It is characterized in that, described combiner is constructed to, and the output beam being characterized by the selected space pattern with Breadth Maximum and minimum widith is provided.
15. equipment according to claim 3, is characterized in that, described electric inputting interface is constructed to, and make radio frequency electrical input and described multiple laser diode device couplings.
16. equipment according to claim 3, is characterized in that, described electric inputting interface is constructed to, and make logical signal and described multiple laser diode device coupling.
17. equipment according to claim 1, is characterized in that, further comprise the submounts member characterizing with the thermal coefficient of expansion of described strutting piece and the coupling of described radiator.
18. equipment according to claim 1, is characterized in that, further comprise the one or more submounts members that make described multiple laser diode device and the coupling of described strutting piece.
19. equipment according to claim 18, is characterized in that, described one or more submounts members comprise the material being selected from aluminium nitride, BeO, diamond or diamond synthesis.
20. equipment according to claim 18, is characterized in that, described one or more submounts members are constructed to, and make described multiple laser diode device and the coupling of described strutting piece.
21. equipment according to claim 1, is characterized in that, further comprise the submounts that is attached to described strutting piece, and described submounts is characterized by the thermal conductivity of 200W/ (mk) at least.
22. equipment according to claim 1, is characterized in that, described multiple laser diode devices are directly coupled with described strutting piece direct heat.
23. equipment according to claim 1, is characterized in that, at least a portion of described multiple laser diode devices covers and is selected from the nonpolar orientation surface region containing gallium or nitrogen and semi-polarity containing the orientation surface region in the orientation surface region of gallium or nitrogen.
24. equipment according to claim 23, is characterized in that,
Described orientation surface region is by { 20-21} or { the semi-polarity orientation that 20-2-1} plane characterizes; And
Laser region covers described orientation surface region; Wherein, described laser region is with the projection oriented of c direction.
25. equipment according to claim 23, is characterized in that,
Described orientation surface region is the nonpolar orientation being characterized by m plane; And
Laser region covers described orientation surface region, and wherein, described laser region is with c direction orientation.
26. equipment according to claim 1, is characterized in that, described Free Space Optics device comprises fast axis collimation lens.
27. equipment according to claim 1, further comprise optical fiber, it is characterized in that, described output beam is coupling in described optical fiber.
28. 1 kinds of optical module equipment, comprise by length, width and the form factor highly characterizing; Described height is by being less than 11mm and being greater than the characterization of size of 1mm, and described equipment comprises:
Strutting piece;
The multiple laser diode devices of the numbering that covers described strutting piece from 1 to N, the each Emission Lasers bundle that is constructed in described multiple laser diode devices; It is characterized in that,
At least some in described multiple laser diode device comprise the laser diode device containing gallium or nitrogen, the described laser diode device containing gallium or nitrogen be constructed to transmitting by be selected from have scope from the blue emission of the wavelength of 415nm to 485nm, there is the laser beam that the transmitting of scope from the green emission of the wavelength of 500nm to 560nm and their combination characterizes; And wherein, N is greater than 1;
Be constructed to from the wave guide member of described multiple laser optics Emission Lasers bundles; And
Combiner, is constructed to receive laser beam from described multiple laser diode devices, and the output beam being characterized by selected wave-length coverage, selected spectral width, selected power and selected spatial configuration is provided; Wherein,
Described strutting piece is constructed to heat energy to be sent to radiator from described multiple laser diode devices;
At least one in described laser beam is by being greater than 60% and be less than 100% polarization purity and characterize;
Described output beam is characterized by the optics power output of 5W at least; And
Hot path from described laser aid to radiator is characterized by the thermal impedance that is less than 4 degrees Celsius/electrical watt input power.
29. 1 kinds of optical module equipment, comprise by length, width and the form factor highly characterizing; Described height is by being less than 11mm and being greater than the characterization of size of 1mm, and described equipment comprises:
Strutting piece;
The multiple laser diode devices of the numbering that covers described strutting piece from 1 to N, the each Emission Lasers bundle that is constructed in described multiple laser diode devices; It is characterized in that,
At least some in described multiple laser diode device comprise the laser diode device containing gallium or nitrogen, the described laser diode device containing gallium or nitrogen is by nonpolar or semi-polarity orientation surface area attribute, and be constructed to transmitting by be selected from have scope from the blue emission of the wavelength of 415nm to 485nm, there is the laser beam that the transmitting of scope from the green emission of the wavelength of 500nm to 560nm and their combination characterizes; And wherein, N is greater than 1;
Cover the laser region of nonpolar or semi-polarity surf zone; Wherein, each laser region is with the projection oriented of c direction or c direction, and, characterized by first end and the second end; And
Combiner, is constructed to receive N multiple laser beams that incident laser is intrafascicular; Described combiner is used for producing the output beam with selected wave-length coverage, spectral width, power and spatial configuration, and wherein, N is greater than 1; Wherein
Described strutting piece is constructed to heat energy to be sent to radiator from described multiple laser diode devices;
At least one in described laser beam is by being greater than 60% and be less than 100% polarization purity and characterize;
Described output beam is characterized by the predetermined nominal operation optics output power range of 5W at least; And
Hot path from described laser aid to radiator is characterized by the thermal impedance that is less than 4 degrees Celsius/electrical watt input power.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/732,233 US9025635B2 (en) | 2011-01-24 | 2012-12-31 | Laser package having multiple emitters configured on a support member |
| US13/732,233 | 2012-12-31 |
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| Publication Number | Publication Date |
|---|---|
| CN203967503U true CN203967503U (en) | 2014-11-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320891549.5U Expired - Lifetime CN203967503U (en) | 2012-12-31 | 2013-12-31 | Optical module equipment |
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| CN (1) | CN203967503U (en) |
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| US9810383B2 (en) | 2011-01-24 | 2017-11-07 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
| CN109600876A (en) * | 2017-09-27 | 2019-04-09 | 日月光半导体制造股份有限公司 | Optical package structure, optical module and its manufacturing method |
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