CN203859959U - Whole machine structure with heat radiator and intelligent power semiconductor module integrated - Google Patents
Whole machine structure with heat radiator and intelligent power semiconductor module integrated Download PDFInfo
- Publication number
- CN203859959U CN203859959U CN201420196417.5U CN201420196417U CN203859959U CN 203859959 U CN203859959 U CN 203859959U CN 201420196417 U CN201420196417 U CN 201420196417U CN 203859959 U CN203859959 U CN 203859959U
- Authority
- CN
- China
- Prior art keywords
- control circuit
- power semiconductor
- plate
- semiconductor module
- machine structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000010410 layer Substances 0.000 claims description 16
- 239000002131 composite material Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 6
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 230000001131 transforming effect Effects 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000741 silica gel Substances 0.000 abstract 2
- 229910002027 silica gel Inorganic materials 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The utility model relates to a whole machine structure with a heat radiator and an intelligent power semiconductor module integrated, which comprises a power semiconductor module, a first control circuit board and a second control circuit board, wherein the power semiconductor module comprises a chip, a DBC board, a heat radiator and a module shell, the DBC board is welded on the heat radiator, the chip is welded on the DBC board, the chip is covered with a silica gel protection layer, the module shell is provided with a first electrode terminal and a second electrode terminal, the first control circuit board and the second control circuit board are respectively fixed on the first electrode terminal and the second electrode terminal, and the mounting position of the second control circuit board is higher than the upper surface of the silica gel protection layer. as a drive circuit board, the first control circuit board and the second control circuit board are respectively integrated on the power semiconductor module with the heat radiator, the size is reduced by about 30%, each control board is independently fixed, each control board can be directly replaced in the case of failure, and flexibility of maintenance and replacement is improved.
Description
Technical field
The utility model relates to a kind of power semiconductor modular structure, particularly the complete machine structure of a kind of integrated heat spreader and intelligent power semiconductor module.
Background technology
Power semiconductor modular Chang Zuowei core devices and other peripheral structures, such as radiator, drive circuit power panel and 10G CPU Control Unit etc. are combined to form power semiconductor module, thereby realize various functions, obtained being widely used in field of power electronics such as frequency converter, UPS, electric welding machines.For example, in frequency converter, the conventional compound mode of power semiconductor modular and radiator, drive circuit power panel and 10G CPU Control Unit as shown in Figure 1, power semiconductor modular 1 bottom even is smeared the rear screwed lock of using of heat-conducting silicone grease 15 on air-cooled radiator 16, drive circuit power panel 14 is welded on above power semiconductor modular 1, CPU board 3 is connected on drive circuit power panel 14 by plug holding wire, wherein power semiconductor modular is provided by special module producer, and remainder is by frequency converter or other-end producer designed, designed.The advantage of this fit system is that engineer can freely design peripheral assembly according to existing power semiconductor modular, and product flexibility is large, simplicity of design, and dismounting, replacing are conveniently; Shortcoming is that the power semiconductor modular volume forming is large, and integrated level is low.Taking frequency converter as example, by research and analysis, why volume is large, integrated level is low for it, have 15% to be that other 70% is about (and the volume of radiator and the power consumption of module are directly proportional) with the radiator volume of power semiconductor module because the volume of the drive circuit power panel of existing power semiconductor module, CPU board is larger.
For the drawback of prior art, each manufacturer improves respectively: the company having is by drive circuit power panel, opening becomes drive circuit board 2 and power panel 4, then drive circuit board 2 is integrated in to power semiconductor modular 1 inside, carry out epoxy sealing, as shown in Figure 2, the power semiconductor module of formation is known as IPM (intelligent power module).This fractionation mode can improve to a certain extent integrated level, reduce volume, but the volume reducing is very limited, is less than 10%; And because drive circuit board by epoxy sealing in power semiconductor modular inside, be difficult to dismounting and replace, therefore not high enough the and easy-maintaining not of flexibility ratio.And the European module Semikron of producer adopts crimp technology, power semiconductor modular 1 is directly pressed in to smooth water-filled radiator 17 by the mode of mechanical spring, as shown in Figure 3, the volume of radiator can be reduced to like this to 1/3 original left and right, therefore reduced the volume of whole power semiconductor module, improve efficiency, but the crimping apparatus and the more difficult realization of method complexity that use, and the general more complicated costliness of water-filled radiator 17, the power semiconductor module that therefore which forms is suitable for use in high-end occasion.Other producers, such as Infineon, adopt low-power chip of new generation, have fully reduced the volume of radiator, and this is the most effectively mode at present.But want to reduce radiator volume in the situation that not reducing power output, and the chip of power semiconductor modular inside need to be changed into the chip of new generation that technology power consumption is lower, this technology is monopolized by several international major companies at present; And the chip investment that updates is huge, the cycle is long, and within several years, even decades are all likely.
To sum up, prior art is on the low side to architecture advances mode or the integrated level of power semiconductor module, and flexibility ratio reduces, or cost is higher, and the improvement cycle is long, therefore needs to design a kind of new power semiconductor modular structure.
Utility model content
Technical problem to be solved in the utility model is to provide the complete machine structure of a kind of integrated heat spreader and intelligent power semiconductor module, to solve the technical problem that in prior art, power semiconductor modular structure volume is large, integrated level is on the low side.
The technical scheme that the utility model solves the problems of the technologies described above is as follows: comprise power semiconductor modular, first control circuit plate and second control circuit plate, described power semiconductor modular comprises the module housing of chip, DBC plate, radiator and accommodating described DBC plate and chip; Described DBC plate is welded on the upper surface of described radiator; Described chips welding, at described DBC plate upper surface, is coated with silicone protective layer on described chip; In described module housing, be provided with the first slot and the second slot near described DBC plate two ends place; in described first, second slot, be respectively equipped with the first electrode terminal and the second electrode terminal; described first control circuit plate is fixed on described the first electrode terminal; described second control circuit plate is fixed on described the second electrode terminal, and the installation site of described second control circuit plate is higher than the upper surface of described silicone protective layer.
On the basis of technique scheme, the utility model can also do following improvement.
Further, described first control circuit plate is by plugging or be weldingly fixed on described the first electrode terminal.
Further, described second control circuit plate is by plugging or be weldingly fixed on described the second electrode terminal.
Further, described radiator bottom is fixed with fin.
Further, described radiator is the composite plate of double-layer structure at least, and described DBC plate is welded on the upper surface of the described composite plate the superiors, and the bottom of described composite plate is provided with groove, and described fin assigns in described groove.
Further, described radiator is the copper aluminum bronze three-layer composite board of upper copper layer, middle aluminium lamination and bottom copper layer composition, and described DBC plate is welded on upper copper layer surface, and described bottom copper layer is provided with the groove for assigning described fin.
Further, described first control circuit plate is power panel, and described second control circuit plate is drive circuit board.
Further, also comprise CPU board, described CPU board is connected with described drive circuit board by plug holding wire.
Further, described first control circuit plate is power panel, and described second control circuit plate is for driving CPU surface-mounted integrated circuit.
Further, the capacitor transforming circuit board that described first control circuit plate is power panel, the protection circuit plate that described second control circuit plate is power panel.
The beneficial effects of the utility model are: the complete machine structure that the utility model proposes a kind of integrated heat spreader and intelligent power semiconductor module, first control circuit plate, second control circuit plate are integrated into respectively and are with on gelled power semiconductor modular, not only volume has reduced 30%, and the later stage coordinate new chip technology, volume can also further be reduced; Each control board is independently fixing simultaneously, and in the time breaking down, each control board can directly be changed, the flexibility that has improved the maintenance of power semiconductor module and changed.
Brief description of the drawings
Fig. 1 is the structural representation of prior art for the power semiconductor module of frequency converter;
Fig. 2～Fig. 3 is the structural representation for the power semiconductor module of frequency converter after improving;
Fig. 4 is the structural representation of the complete machine structure of integrated heat spreader of the present utility model and intelligent power semiconductor module;
Fig. 5 is the structural representation for the integrated heat spreader of frequency converter and the complete machine structure of intelligent power semiconductor module in embodiment 1.
Embodiment
Below in conjunction with accompanying drawing, principle of the present utility model and feature are described, example, only for explaining the utility model, is not intended to limit scope of the present utility model.
Fig. 4 is the structural representation of the complete machine structure of integrated heat spreader of the present utility model and intelligent power semiconductor module, comprise power semiconductor modular 1, second control circuit plate 2 and first control circuit plate 4, described power semiconductor modular 1 comprises the module housing 6 of chip 7, DBC plate 5, radiator 11 and accommodating described DBC plate 5 and chip 7; Described chip 7 is welded on described DBC plate 5 upper surfaces, on described chip 7, is coated with silicone protective layer 8; In described module housing 6, be provided with the first slot 9.1 and the second slot 9 near described DBC plate 5 two ends places; 2; in described the first slot 9.1 and the second slot 9.2, be respectively equipped with the first electrode terminal 10.1 and the second electrode terminal 10.2; described first control circuit plate 4 is fixed on described the first electrode terminal 10.1; described second control circuit plate 2 is fixed on described the second electrode terminal 10.2, and the installation site of second control circuit plate 2 is higher than the upper surface of described silicone protective layer 8.
Embodiment 1 is for the integrated heat spreader of frequency converter and the complete machine structure of intelligent power semiconductor module, as described in Figure 5, for the structural representation for the integrated heat spreader of frequency converter and the complete machine structure of intelligent power semiconductor module in embodiment 1, described radiator 11 is composite plate, described composite plate 11 is copper aluminum bronze three-decker, described DBC plate 5 is welded on upper copper layer 11.1 upper surfaces, composite plate 11 intermediate layers are middle aluminium lamination 11.2, bottom copper layer 11.3 is provided with groove 12, in described groove 12, has assigned fin 13.In other embodiments, described composite plate 11 can be double-layer structure at least, and described DBC plate 5 is welded on the upper surface of described composite plate 11 the superiors, and the bottom of described composite plate 11 is provided with groove 12, and described fin 13 assigns in described groove 12.
In embodiment 1, described first control circuit plate 4 is the power panel for power supply is provided, and second control circuit plate 2 is drive circuit board, and described power panel is by plugging or be weldingly fixed on described the first electrode terminal 10.1; Described drive circuit board is by plugging or be weldingly fixed on described the second electrode terminal 10.2; Described complete machine structure also comprises the CPU board 3 for controlling described drive circuit board, and described CPU board 3 is connected with described drive circuit board by plug holding wire.
In other embodiments, can do concrete setting to first control circuit plate and second control circuit plate according to actual needs, the circuit board that is easier to damage is independently arranged on described the second electrode terminal, to change.Such as in another embodiment, described first control circuit plate is power panel, and described second control circuit plate is the integrated driving CPU surface-mounted integrated circuit of drive plate and CPU board; In another embodiment, described first control circuit plate is electric capacity and the independent capacitor transforming circuit board of transformation part in power panel, and described second control circuit plate is the independent protection circuit plate of protection circuit part in power panel.
The utility model proposes the complete machine structure of a kind of integrated heat spreader and intelligent power semiconductor module, first control circuit plate, second control circuit plate are integrated into respectively and are with on gelled power semiconductor modular, not only volume has reduced 30%, and the later stage coordinate new chip technology, volume can also further be reduced; Each control board is independently fixing simultaneously, and in the time breaking down, each control board can directly be changed, the flexibility that has improved the maintenance of power semiconductor module and changed.
Above are only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (10)
1. the complete machine structure of an integrated heat spreader and intelligent power semiconductor module, it is characterized in that: comprise power semiconductor modular, first control circuit plate and second control circuit plate, described power semiconductor modular comprises the module housing of chip, DBC plate, radiator and accommodating described DBC plate and chip; Described DBC plate is welded on the upper surface of described radiator; Described chips welding, at described DBC plate upper surface, is coated with silicone protective layer on described chip; In described module housing, be provided with the first slot and the second slot near described DBC plate two ends place; in described first, second slot, be respectively equipped with the first electrode terminal and the second electrode terminal; described first control circuit plate is fixed on described the first electrode terminal; described second control circuit plate is fixed on described the second electrode terminal, and the installation site of described second control circuit plate is higher than the upper surface of described silicone protective layer.
2. the complete machine structure of integrated heat spreader according to claim 1 and intelligent power semiconductor module, is characterized in that: described first control circuit plate is by plugging or be weldingly fixed on described the first electrode terminal.
3. the complete machine structure of integrated heat spreader according to claim 1 and intelligent power semiconductor module, is characterized in that: described second control circuit plate is by plugging or be weldingly fixed on described the second electrode terminal.
4. the complete machine structure of integrated heat spreader according to claim 1 and intelligent power semiconductor module, is characterized in that: described radiator bottom is fixed with fin.
5. the complete machine structure of integrated heat spreader according to claim 4 and intelligent power semiconductor module, it is characterized in that: described radiator is the composite plate of double-layer structure at least, described DBC plate is welded on the upper surface of the described composite plate the superiors, the bottom of described composite plate is provided with groove, and described fin assigns in described groove.
6. the complete machine structure of integrated heat spreader according to claim 4 and intelligent power semiconductor module, it is characterized in that: described radiator is the copper aluminum bronze three-layer composite board of upper copper layer, middle aluminium lamination and bottom copper layer composition, described DBC plate is welded on upper copper layer surface, and described bottom copper layer is provided with the groove for assigning described fin.
7. according to the arbitrary described integrated heat spreader of claim 1～6 and the complete machine structure of intelligent power semiconductor module, it is characterized in that: described first control circuit plate is power panel, described second control circuit plate is drive circuit board.
8. the complete machine structure of integrated heat spreader according to claim 7 and intelligent power semiconductor module, is characterized in that: also comprise CPU board, described CPU board is connected with described drive circuit board by plug holding wire.
9. according to the arbitrary described integrated heat spreader of claim 1～6 and the complete machine structure of intelligent power semiconductor module, it is characterized in that: described first control circuit plate is power panel, described second control circuit plate is for driving CPU surface-mounted integrated circuit.
10. according to the arbitrary described integrated heat spreader of claim 1～6 and the complete machine structure of intelligent power semiconductor module; it is characterized in that: the capacitor transforming circuit board that described first control circuit plate is power panel, the protection circuit plate that described second control circuit plate is power panel.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420196417.5U CN203859959U (en) | 2014-04-21 | 2014-04-21 | Whole machine structure with heat radiator and intelligent power semiconductor module integrated |
| TW104205622U TWM506371U (en) | 2014-04-21 | 2015-04-15 | A whole structure of an intelligent power semiconductor module having an integrated heat sink |
| TW104112038A TW201541565A (en) | 2014-04-21 | 2015-04-15 | A whole structure of an intelligent power semiconductor module having an integrated heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420196417.5U CN203859959U (en) | 2014-04-21 | 2014-04-21 | Whole machine structure with heat radiator and intelligent power semiconductor module integrated |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203859959U true CN203859959U (en) | 2014-10-01 |
Family
ID=51609802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420196417.5U Expired - Lifetime CN203859959U (en) | 2014-04-21 | 2014-04-21 | Whole machine structure with heat radiator and intelligent power semiconductor module integrated |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN203859959U (en) |
| TW (2) | TW201541565A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246808A (en) * | 2018-03-09 | 2019-09-17 | 南京银茂微电子制造有限公司 | Power module and its manufacturing method with reduced junction temperature |
| CN111836509A (en) * | 2019-04-18 | 2020-10-27 | 威刚科技股份有限公司 | Controller device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105916354B (en) * | 2016-05-24 | 2018-09-25 | 深圳威迈斯电源有限公司 | A kind of power module with cofferdam |
-
2014
- 2014-04-21 CN CN201420196417.5U patent/CN203859959U/en not_active Expired - Lifetime
-
2015
- 2015-04-15 TW TW104112038A patent/TW201541565A/en unknown
- 2015-04-15 TW TW104205622U patent/TWM506371U/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246808A (en) * | 2018-03-09 | 2019-09-17 | 南京银茂微电子制造有限公司 | Power module and its manufacturing method with reduced junction temperature |
| CN111836509A (en) * | 2019-04-18 | 2020-10-27 | 威刚科技股份有限公司 | Controller device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201541565A (en) | 2015-11-01 |
| TWM506371U (en) | 2015-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN208257678U (en) | Highly integrated intelligent power module and electrical equipment | |
| CN203859959U (en) | Whole machine structure with heat radiator and intelligent power semiconductor module integrated | |
| CN103779294A (en) | Power module packaging structure with water-cooled heat sink used for two-sided cooling | |
| CN106887955A (en) | High-power DC/DC modules | |
| CN104157628B (en) | A kind of novel electric power electric module | |
| CN204887856U (en) | Double -deck optical module heat radiation structure | |
| CN101447740A (en) | High-voltage converter current transforming unit with modularized space structure | |
| CN202019316U (en) | Solar inverter power module of solar inverter | |
| CN110034664A (en) | A kind of power modules of SIC electric car | |
| CN208257677U (en) | Highly integrated intelligent power module and electrical equipment | |
| CN101582414B (en) | Power module by directly bonding power terminal | |
| CN201242052Y (en) | Combined component of LED and heat conducting device | |
| CN202121492U (en) | Power source and power source casing thereof | |
| CN204271132U (en) | Front-end protection packaged light source module | |
| CN204497951U (en) | A kind of small power module power source | |
| CN103779341B (en) | A kind of high-power half bridge module | |
| CN202652098U (en) | Inverter circuit module for electromobile controller | |
| CN209072351U (en) | Photovoltaic DC-to-AC converter shell | |
| CN113422563A (en) | Power electronic controller based on SIC power semiconductor single tube parallel connection | |
| CN204030980U (en) | A kind of excitation unit | |
| CN204578358U (en) | Battery vehicle DC/DC transducer | |
| CN204425175U (en) | High voltage transducer power unit | |
| CN203760465U (en) | Novel power semiconductor module | |
| CN205847101U (en) | A kind of supply convertor | |
| CN205040123U (en) | Waterproof power supply |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141001 |