CN203851118U - Mosfet output short circuit protection circuit device - Google Patents
Mosfet output short circuit protection circuit device Download PDFInfo
- Publication number
- CN203851118U CN203851118U CN201420225263.8U CN201420225263U CN203851118U CN 203851118 U CN203851118 U CN 203851118U CN 201420225263 U CN201420225263 U CN 201420225263U CN 203851118 U CN203851118 U CN 203851118U
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- Prior art keywords
- circuit
- mosfet
- oxide
- metal
- semiconductor
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- Expired - Lifetime
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- 239000004065 semiconductor Substances 0.000 claims description 31
- 230000003321 amplification Effects 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 238000005070 sampling Methods 0.000 abstract 1
- 230000001960 triggered effect Effects 0.000 abstract 1
- 238000001746 injection moulding Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
An MOSFET output short circuit protection circuit device is provided. The MOSFET output short circuit protection circuit device includes an MOSFET driving circuit; the MOSFET driving circuit is connected with a protection circuit device; the MOSFET driving circuit comprises a plurality of MOS transistors and optocouplers which are arranged inside; control signals are input to the grid G ends of the MOS transistors through the optocouplers; the source S ends of the MOS transistors are connected in parallel and are fixed on a PCB circuit board; the source S ends of the MOS transistors which are connected together are connected with a circuit ground line through a sampling resistor; and the drain D end of each MOS transistor is connected with a load. The MOSFET output short circuit protection circuit device of the utility model can effectively protect an MOSFET output circuit from being damaged when a short circuit occurs in the MOSFET output circuit and large current infuses the MOSFET output circuit; and the MOSFET output short circuit protection circuit device can perform self locking reliably and cut off output when a protection action is triggered, and therefore, the load and the driving circuit can be effectively protected.
Description
Technical field
The utility model belongs to electromechanical integration technology area, relates in particular to the MOSFET output short circuit protection line unit in a kind of injection-moulding plastic servo control system that is applied to rubber product processing machinery.
Background technology
It controls output switch valve to the injection molding machine control computer of at present domestic production is all generally to adopt the metal-oxide-semiconductor (see figure 1)s such as IRLU024 or IRFR1205, and the feature of this circuit is that circuit is simple, and response is fast, and output current is large.But in the process using in reality, because staff is in the problem of the carelessness aspect wiring or switch valve itself, the output circuit short circuit that can cause metal-oxide-semiconductor to drive, short circuit causes metal-oxide-semiconductor because of overcurrent, overheated damage, when serious, even the Copper Foil of wiring board is burnt.It is also low that single metal-oxide-semiconductor driver output adds the fairly simple cost of protective circuit, and problem is that general injection molding machine control computer has 32Lu 48 road metal-oxide-semiconductor driver outputs at least, and it is very high that every road all installs protection cost additional, and PCB layout area also increases a lot.
At present also occurred some metal-oxide-semiconductors with over-heat inside or overcurrent protection, such as BTS452, the NCV8408 of ON etc. of Infineon, but that shortcoming is price is high, and monolithic price is up to RMB more than 5 yuan, periphery circuit complexity, and paster encapsulation erection space is large; And because current domestic use amount is little, generally cause delivery cycle longer, buying is difficult for, easily supply shortage, key is also to increase much with 32,48 such metal-oxide-semiconductor costs, uneconomical.
Summary of the invention
The purpose of this utility model is to overcome the deficiency that prior art exists; and provide a kind of MOSFET output short circuit protection line unit; in the time using this not metal-oxide-semiconductors with protection such as IRLU024, add this protection circuit device, can effectively protect metal-oxide-semiconductor and PCB wiring board.
The purpose of this utility model completes by following technical solution, comprise MOSFET drive circuit, described MOSFET drive circuit is connected with protection circuit device, includes some roads metal-oxide-semiconductor, optocoupler in this MOSFET drive circuit, and the grid G end of metal-oxide-semiconductor is by optocoupler input control signal; Between the source S end of every road metal-oxide-semiconductor, link together by mode in parallel, and be fixed on PCB wiring board; The source S end of the metal-oxide-semiconductor linking together is by sample resistance link ground wire, and the drain D end of every road metal-oxide-semiconductor is connected with load.
As preferably; described protection circuit device comprises sample resistance, signal amplification circuit, Schmidt's comparison circuit and electronic switch; this sample resistance is connected with Schmidt's comparison circuit by signal amplification circuit; Schmidt's comparison circuit is provided with two divider resistances that are used for determining predetermined current value, and this Schmidt's comparison circuit is connected with electronic switch.
The beneficial effects of the utility model are: this protection circuit device can effectively protect MOSFET outlet line not damaged in the time occurring that output short circuit, large electric current pour into; And after protection action triggers, reliably self-locking, cuts off output, effectively protects load and driver circuit.
Brief description of the drawings
Fig. 1 is existing single channel conspectus.
Fig. 2 is circuit distribution schematic diagram of the present utility model.
Label in accompanying drawing is respectively: 1, MOSFET drive circuit; 2, protection circuit device; 3, load; 11, metal-oxide-semiconductor; 12, optocoupler; 21, sample resistance; 22, signal amplification circuit; 23, Schmidt's comparison circuit; 24, electronic switch; 25, divider resistance.
Embodiment
Below in conjunction with accompanying drawing, the utility model is done to detailed introduction: as shown in Figure 2, the source S end of the every road of the utility model metal-oxide-semiconductor 11 interconnects on PCB wiring board, and the source S end linking together is again by sample resistance 21 link ground wires.+ 24V is input power, and electronic switch 24 is conductings under normal circumstances, and+24V_S voltage is exactly+24V, in the time that control signal high level joins optocoupler 12, and optocoupler 12 conductings, also conducting of metal-oxide-semiconductor 11, normally works with regard to current flowing in load 3.
The utility model is realized principle: the drive current of injection molding machine control computer IO output total current in actual applications can not exceed certain value, suppose that specified total current allows to be output as n ampere (A), when design, the output of all metal-oxide-semiconductors 11 is divided into m group, so the electric current of the maximum output of the output of every group is n/m ampere.When design, every group of output mos pipe 11 shares with a protection circuit device 2; the source S end of every group of metal-oxide-semiconductor 11 links together and receives on ground wire by sample resistance 21; when protection circuit device 2 detects that by sample resistance 21 operating current of certain group is greater than n/m ampere-hour; be input to control signal on metal-oxide-semiconductor 11 grid G ends with regard to fast shut-off; close metal-oxide-semiconductor 11 and export, thereby reach the object of protecting metal-oxide-semiconductor.Just only need to increase m short-circuit protection line unit 2 by such design just much of that, this protection circuit device 2 also can be protected multichannel metal-oxide-semiconductor 11 simultaneously.
If damaging the electric current that causes flowing through on metal-oxide-semiconductor 11, the load 3 unexpected short circuits in two ends or load 3 exceed predefined n/m ampere (two divider resistances 25 of this value before by Schmidt's comparison circuit 23 are determined), this electric current produces pressure drop on sample resistance 21, because sample resistance 21 only has tens milliohms, the pressure drop producing is also little, so need signal amplification circuit 22 to be amplified, signal after amplification is added to Schmidt's comparison circuit 23, Schmidt's comparison circuit 23 just maintains the disconnected electronic switch 24 of a fixed signal outputting cutting after relatively, just do not had on like this+24V_S+24V power supply, optocoupler 12 outputs are closed, thereby the conducting of quick closedown metal-oxide-semiconductor 11, protect metal-oxide-semiconductor 11.
The utility model is not limited to above-mentioned execution mode; no matter do any variation in its shape or device material formation; every employing structural design provided by the utility model, is all a kind of distortion of the present utility model, all should think within the utility model protection range.
Claims (2)
1. a MOSFET output short circuit protection line unit, comprise MOSFET drive circuit (1), it is characterized in that: described MOSFET drive circuit (1) is connected with protection circuit device (2), in this MOSFET drive circuit (1), include some roads metal-oxide-semiconductors (11), optocoupler (12), the grid G end of metal-oxide-semiconductor (11) is by optocoupler (12) input control signal; Between the source S end of every road metal-oxide-semiconductor (11), link together by mode in parallel, and be fixed on PCB wiring board; The source S end of the metal-oxide-semiconductor (11) linking together is by sample resistance (21) link ground wire, and the drain D end of every road metal-oxide-semiconductor (11) is connected with load (3).
2. MOSFET output short circuit protection line unit according to claim 1; it is characterized in that: described protection circuit device (2) comprises sample resistance (21), signal amplification circuit (22), Schmidt's comparison circuit (23) and electronic switch (24); this sample resistance (21) is connected with Schmidt's comparison circuit (23) by signal amplification circuit (22); Schmidt's comparison circuit (23) is provided with two divider resistances (25) that are used for determining predetermined current value, and this Schmidt's comparison circuit (23) is connected with electronic switch (24).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420225263.8U CN203851118U (en) | 2014-05-05 | 2014-05-05 | Mosfet output short circuit protection circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420225263.8U CN203851118U (en) | 2014-05-05 | 2014-05-05 | Mosfet output short circuit protection circuit device |
Publications (1)
Publication Number | Publication Date |
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CN203851118U true CN203851118U (en) | 2014-09-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201420225263.8U Expired - Lifetime CN203851118U (en) | 2014-05-05 | 2014-05-05 | Mosfet output short circuit protection circuit device |
Country Status (1)
Country | Link |
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CN (1) | CN203851118U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105892362A (en) * | 2016-05-03 | 2016-08-24 | 北京森源东标电气有限公司 | Short-circuit monitoring circuit for MOS tube in drive circuit |
CN106817120A (en) * | 2017-01-12 | 2017-06-09 | 四川赛科安全技术有限公司 | Drive circuit with enhancing bus driver energy force-summing device short-circuit protection function |
-
2014
- 2014-05-05 CN CN201420225263.8U patent/CN203851118U/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105892362A (en) * | 2016-05-03 | 2016-08-24 | 北京森源东标电气有限公司 | Short-circuit monitoring circuit for MOS tube in drive circuit |
CN105892362B (en) * | 2016-05-03 | 2018-11-09 | 北京东标电气有限公司 | A kind of short-circuit observation circuit to metal-oxide-semiconductor in driving circuit |
CN106817120A (en) * | 2017-01-12 | 2017-06-09 | 四川赛科安全技术有限公司 | Drive circuit with enhancing bus driver energy force-summing device short-circuit protection function |
CN106817120B (en) * | 2017-01-12 | 2020-06-16 | 四川赛科安全技术有限公司 | Drive circuit with bus drive capability enhancement and short-circuit protection function of equipment |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term |
Granted publication date: 20140924 |
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CX01 | Expiry of patent term |