CN203786190U - Tunnel magnetoresistive current sensor - Google Patents

Tunnel magnetoresistive current sensor Download PDF

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Publication number
CN203786190U
CN203786190U CN201420229652.8U CN201420229652U CN203786190U CN 203786190 U CN203786190 U CN 203786190U CN 201420229652 U CN201420229652 U CN 201420229652U CN 203786190 U CN203786190 U CN 203786190U
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CN
China
Prior art keywords
tunnel magnetoresistive
current sensor
chips
base body
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201420229652.8U
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Chinese (zh)
Inventor
韩连生
白建民
王建国
毛思宁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SINOMAGS TECHNOLOGY Co Ltd
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SINOMAGS TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to CN201420229652.8U priority Critical patent/CN203786190U/en
Application granted granted Critical
Publication of CN203786190U publication Critical patent/CN203786190U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

Disclosed in the utility model is a tunnel magnetoresistive current sensor comprising a housing. A circular ring-shaped base body is installed in the housing; more than eight tunnel magnetoresistive chips in an annular arrangement mode with equal intervals are installed at the base body; and a detection circuit connected with all tunnel magnetoresistive chips is also arranged in the base body. According to the provided tunnel magnetoresistive current sensor, the magnetic core structure is not required, thereby substantially reducing the size and improving the parameter performances of response time, linearity, precision and frequency response and the like of the tunnel magnetoresistive current sensor. Moreover, more than eight nel magnetoresistive chips are used for sensing the tested current and the electric signal outputted by the sensor can reach the strength for direct usage, thereby simplifying and even eliminating the subsequent circuit.

Description

A kind of tunnel magnetoresistive current sensor
Technical field
The utility model relates to a kind of tunnel magnetoresistive current sensor based on tunnel magnetoresistive technology without core structure.。
Background technology
The technical scheme of current sensor in the market all adopts closed loop principle or open loop principle to be made.No matter but be open loop principle or closed loop principle, they must use magnetic core could realize the function of product.This point has just restricted the development space of estimated current sensor, make it have that volume is large, cost is high and above performance, will be subject to some shortcomings such as the performance restriction of magnetic core, such as the parameters such as the frequency response of current sensor, response time, the linearity, precision all can be restricted.。
Summary of the invention
Technical problem to be solved in the utility model is for above-mentioned prior art present situation, and a kind of tunnel magnetoresistive current sensor based on tunnel magnetoresistive technology that there is no core structure is provided.
The utility model solves the problems of the technologies described above adopted technical scheme: a kind of tunnel magnetoresistive current sensor, comprise housing, the matrix of annular is installed in housing, 8 above equidistant tunnel magnetoresistive chips of arranging are ringwise installed on matrix, in matrix, are provided with the testing circuit being connected with each tunnel magnetoresistive chip.
The quantity of above-mentioned tunnel magnetoresistive chip is preferably 16.
Compared with prior art, tunnel magnetoresistive current sensor of the present utility model is without core structure, greatly dwindle volume, the performance parameters such as response time, the linearity, precision and the frequency response of tunnel magnetoresistive current sensor are improved, and adopt 8 above tunnel magnetoresistive chips to respond to tested electric current, the electric signal of tunnel magnetoresistive current sensor output can reach the intensity of direct use, simplifies and has even omitted subsequent conditioning circuit.
Brief description of the drawings
Below in conjunction with drawings and Examples, the present invention is further described:
Fig. 1 is the structural representation of the utility model embodiment.
Fig. 2 is the testing circuit of tunnel magnetoresistive current sensor.
Embodiment
: below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
Reference numeral is wherein: matrix 1, tunnel magnetoresistive chip 2, the first operational amplifier 3, the second operational amplifier 4, power supply chip 5, diode 6, protection chip 7.
As shown in Figure 1, tunnel magnetoresistive current sensor of the present utility model is provided with the matrix 1 of annular in housing, and detected electric current line passes from the center pit of matrix 1.8 above equidistant tunnel magnetoresistive chips 2 of arranging are ringwise installed on matrix 1.In matrix 1, be provided with the testing circuit being connected with each tunnel magnetoresistive chip 2.
The quantity of tunnel magnetoresistive chip 2 can be 8,12 or more.Tunnel magnetoresistive chip 2 quantity on the matrix electric signal that tunnel magnetoresistive current sensor is exported is more at most stronger, simplifies and has even omitted subsequent conditioning circuit.In the present embodiment, the quantity of tunnel magnetoresistive chip 2 is 16.
Tunnel magnetoresistive chip 2 adopts known tunnel magnetoresistance device, and in the time there is electric current in tested electric current line, tunnel magnetoresistive chip 2 just can be experienced magnetic signal, and converts magnetic signal to electric signal output.Shown in Fig. 2 is the testing circuit of individual tunnel magnetic resistance chip 2.Power supply chip 5 is for testing circuit provides power supply, and two diodes 6 form holding circuit with protection chip 7, prevent that in use procedure, tunnel magnetoresistive current sensor wrong line causes tunnel magnetoresistive current sensor to damage.
Output pin 1 output detection signal of tunnel magnetoresistive chip 2, detection signal amplifies through the first operational amplifier 3 and the second operational amplifier 4 secondarys, just exportable effective signal.The circuit stack of the useful signal that each tunnel magnetoresistive chip 2 is exported in matrix 1 exported, and just can be used as the output signal of tunnel magnetoresistive current sensor.

Claims (2)

1. a tunnel magnetoresistive current sensor, comprise housing, it is characterized in that: the matrix (1) that annular is installed in described housing, 8 above equidistant tunnel magnetoresistive chips (2) of arranging are ringwise installed on described matrix (1), in described matrix (1), are provided with the testing circuit being connected with each tunnel magnetoresistive chip (2).
2. a kind of tunnel magnetoresistive current sensor according to claim 1, is characterized in that: the quantity of tunnel magnetoresistive chip (2) is 16.
CN201420229652.8U 2014-05-06 2014-05-06 Tunnel magnetoresistive current sensor Expired - Lifetime CN203786190U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420229652.8U CN203786190U (en) 2014-05-06 2014-05-06 Tunnel magnetoresistive current sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420229652.8U CN203786190U (en) 2014-05-06 2014-05-06 Tunnel magnetoresistive current sensor

Publications (1)

Publication Number Publication Date
CN203786190U true CN203786190U (en) 2014-08-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420229652.8U Expired - Lifetime CN203786190U (en) 2014-05-06 2014-05-06 Tunnel magnetoresistive current sensor

Country Status (1)

Country Link
CN (1) CN203786190U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105353192A (en) * 2015-11-19 2016-02-24 无锡乐尔科技有限公司 Current sensor
CN113391115A (en) * 2021-03-17 2021-09-14 清华大学 Circular sensor array for measuring current

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105353192A (en) * 2015-11-19 2016-02-24 无锡乐尔科技有限公司 Current sensor
CN113391115A (en) * 2021-03-17 2021-09-14 清华大学 Circular sensor array for measuring current

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GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20140820

CX01 Expiry of patent term