CN203734523U - Critical conduction full-load high-power factor correction circuit - Google Patents

Critical conduction full-load high-power factor correction circuit Download PDF

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Publication number
CN203734523U
CN203734523U CN201420100997.3U CN201420100997U CN203734523U CN 203734523 U CN203734523 U CN 203734523U CN 201420100997 U CN201420100997 U CN 201420100997U CN 203734523 U CN203734523 U CN 203734523U
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China
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boost inductance
circuit
power factor
critical conduction
output
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Expired - Fee Related
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CN201420100997.3U
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Chinese (zh)
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薛晓明
时倩
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Changzhou College of Information Technology CCIT
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Changzhou College of Information Technology CCIT
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The utility model discloses a critical conduction full-load high-power factor correction circuit which comprises a rectifier bridge, a controllable boost inductor, a critical conduction power factor correction circuit, a load judgment circuit and a suspended drive circuit. The critical conduction full-load high-power factor correction circuit is characterized in that input grid voltage is connected with the input end of the rectifier bridge, the positive output end of the rectifier bridge is connected with the input end of the controllable boost inductor, the output end of the controllable boost inductor is connected with the critical conduction power factor correction circuit, the critical conduction power factor correction circuit outputs voltage Vo, the input end of the load judgment circuit is connected with the critical conduction power factor correction circuit, the output of the load judgment circuit is connected with the input of the suspended drive circuit, and the output of the suspended drive circuit is connected with the control end of the controllable boost inductor. According to the utility model, power factor correction with high power factor and low harmonic from no load to full load is realized by changing the boost inductance of the critical conduction power factor correction circuit in different load ranges.

Description

Critical conduction full load high power factor correcting circuit
Technical field
The utility model relates to power technique fields, relates in particular to a kind of critical conduction high power factor correcting circuit all from zero load to full-load range with high efficiency, low distortion.
Background technology
Critical conduction power factor correction circuit (CRM PFC) is because realizing the zero current turning-on of switching tube and the zero-current switching of diode, and below 200W, power conversion occasion is widely applied.The power switch of the critical conduction Active PFC chip controls of current each manufacturer is all operated in frequency conversion state, causes this circuit can only in 50%-100% loading range, realize high power factor, high efficiency and low harmonics distortion; And when power work is within the scope of zero load to 49% underloading, because switch frequency is too high, input current waveform distortion is serious, power factor (PF) value is lower.But a lot of power conversion product mosts of the time are all operated in light condition, as direct current variable frequency motor, electricity-saving lamp etc.Therefore the power factor (PF) and the efficiency that, improve under underloading are problems anxious to be resolved.
Utility model content
The utility model object is for the deficiencies in the prior art, a kind of critical conduction full load high power factor correcting circuit is proposed, by in different loads interval, change the boost inductance of critical conduction mode power factor correction circuit, realize from zero load to the fully loaded Active PFC all with high power factor and low harmonics distortion.
The following describes the related operation principle of the utility model.
The schematic diagram of critical conduction mode power factor correction circuit as shown in Figure 1.According to transformation theory, the service time T of power switch S oNwith turn-off time T oFFbe respectively:
T ON = 4 L P o ηV m 2 - - - ( 1 )
T off = 4 L P o sin ωt ηV m 2 ( m - sin ωt ) - - - ( 2 )
In formula, m is for exporting the V that boosts owith input line voltage peak value V mratio, L is boost inductance, P ofor power output, the efficiency that η is correcting circuit, ω is the angular frequency of input line voltage.
Comprehensively (1), (2) formula, the switching frequency f of available power switch S is:
f = ηV m 2 4 L P o m ( m - sin ωt ) - - - ( 3 )
Can find out from (3) formula, at power output P owhile being reduced to fully loaded 50%, if boost inductance L is doubled, just can obtain the switching frequency identical with 50%-100% loading range at zero load to 49% loading range, in full-load range, all there is high power factor and high efficiency object thereby realize.
According to above-mentioned thinking, the technical solution adopted in the utility model is:
Comprise rectifier bridge, controlled boost inductance, critical conduction power factor correction circuit, load judgment circuit, suspension drive circuit, be characterised in that: input line voltage is connected with rectifier bridge input, rectifier bridge output plus terminal is connected with controlled boost inductance input, controlled boost inductance output is connected with critical conduction power factor (PF) circuit, critical conduction power factor (PF) circuit output voltage V othe input of load judgment circuit is connected with critical conduction power factor correction circuit, the output of load judgment circuit is connected with the input of suspension drive circuit, the output of suspension drive circuit is connected with controlled boost inductance control end, earth terminal, the earth terminal of load judgment circuit, the tandem of critical conduction power factor correction circuit earth terminal of rectifier bridge output negative terminal and suspension drive circuit.
Described controlled boost inductance comprises the first boost inductance L1, the second boost inductance L2, metal-oxide-semiconductor T1, it is characterized in that: the first boost inductance L1, the second boost inductance L2, on same magnetic core, have two kinds of execution modes.
Described controlled boost inductance execution mode one is characterised in that: the non-same polarity of the first boost inductance L1, the drain D of metal-oxide-semiconductor T1 and the tandem of rectifier bridge output plus terminal, the non-same polarity of the Same Name of Ends of the first boost inductance L1 and the second boost inductance L2, the source S of metal-oxide-semiconductor T1, the output of suspension drive circuit is with reference to ground VS tandem, the anode of the booster diode D1 of the Same Name of Ends of the second boost inductance L2 and critical conduction factor correction circuit, the drain D tandem of the metal-oxide-semiconductor T2 of critical conduction factor correction circuit, the grid G of metal-oxide-semiconductor T1 is connected with the output HO of suspension drive circuit.
Described controlled boost inductance execution mode two is characterised in that: the non-same polarity of the second boost inductance L2, the drain D of metal-oxide-semiconductor T1 and the tandem of rectifier bridge output plus terminal, the source S of the non-same polarity of the first boost inductance L1 and metal-oxide-semiconductor T1, the output of suspension drive circuit are with reference to ground VS tandem, the anode tandem of the Same Name of Ends of the Same Name of Ends of the first boost inductance L1 and the second boost inductance L2, the booster diode D1 of critical conduction factor correction circuit, the grid G of metal-oxide-semiconductor T1 is connected with the output HO of suspension drive circuit.
A kind of critical conduction full load high power factor correcting circuit of the present utility model, by controlling the break-make of metal-oxide-semiconductor T1, to make the boost inductance of critical conduction power factor correction circuit zero load to 49% loading range be one times of the boost inductance of 50%-100% loading range, thereby make zero load to 49% loading range there is identical switching frequency with 50%-100% loading range, realized critical conduction power factor correction circuit from zero load to the fully loaded object all with high power factor and low harmonics distortion compared with background technology.
Brief description of the drawings
Fig. 1 is the schematic diagram of critical conduction power factor correction circuit.
Fig. 2 is block diagram of the present utility model.
Fig. 3 is the circuit connection diagram of execution mode one of the present utility model.
Fig. 4 is the circuit connection diagram of execution mode two of the present utility model.
In Fig. 2, Fig. 3, Fig. 4: 1, rectifier bridge, 2, controlled boost inductance, 3, critical conduction power factor correction circuit, 4, load judgment circuit, 5, suspension drive circuit.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
As shown in Figure 2, a kind of critical conduction full load high power factor correcting circuit of the present utility model comprises rectifier bridge (1), controlled boost inductance (2), critical conduction power factor correction circuit (3), load judgment circuit (4), suspension drive circuit (5), be characterised in that: input line voltage is connected with rectifier bridge (1) input, rectifier bridge (1) output plus terminal is connected with controlled boost inductance (2) input, controlled boost inductance (2) output is connected with critical conduction power factor (PF) circuit (3), critical conduction power factor (PF) circuit (3) output voltage V o, the input of load judgment circuit (4) is connected with critical conduction power factor correction circuit (3), the output of load judgment circuit (4) is connected with suspension drive circuit (5) input, the output of suspension drive circuit (5) is connected with controlled boost inductance (2) control end, the earth terminal of rectifier bridge (1) output negative terminal and suspension drive circuit (5), the earth terminal of load judgment circuit (4), critical conduction power factor correction circuit (3) earth terminal tandem.
As shown in Figure 3, for a kind of critical conduction full load high power factor correcting circuit the first embodiment of the present utility model, controlled boost inductance (2) comprises the first boost inductance L1, the second boost inductance L2, metal-oxide-semiconductor T1, it is characterized in that: the first boost inductance L1, the second boost inductance L2 is on same magnetic core, the non-same polarity of the first boost inductance L1, the drain D of metal-oxide-semiconductor T1 and the tandem of rectifier bridge output plus terminal, the non-same polarity of the Same Name of Ends of the first boost inductance L1 and the second boost inductance L2, the source S of metal-oxide-semiconductor T1, the output of suspension drive circuit is with reference to ground VS tandem, the anode of the booster diode D1 of the Same Name of Ends of the second boost inductance L2 and critical conduction factor correction circuit, the drain D tandem of the metal-oxide-semiconductor T2 of critical conduction factor correction circuit, the grid G of metal-oxide-semiconductor T1 is connected with the output HO of suspension drive circuit, critical conduction power factor correction circuit (3) comprises booster diode D1, filter capacitor E1, metal-oxide-semiconductor T2, current sense resistor R1 and pfc controller, the anode of booster diode D1 is connected with the drain D of metal-oxide-semiconductor T2, the source S of metal-oxide-semiconductor T2 is connected with the upper end of current sense resistor R1, the output of pfc controller is connected with the grid G of metal-oxide-semiconductor T2, the negative electrode of booster diode is connected with the upper end of filter capacitor E1, the lower end tandem ground connection of the lower end of filter capacitor E1 and current sense resistor R1, load judgment circuit (4) comprises resistance R 2, resistance R 3, resistance R 4, capacitor C 1 and comparator U, the right-hand member of resistance R 2 is connected with the upper end of resistance R 1, the upper end of the left end of resistance R 2 and capacitor C 1, the anode tandem of comparator U, the left end of the upper end of resistance R 4 and resistance R 3, the negative terminal tandem of comparator U, the right-hand member of resistance R 3 is connected with power supply VCC, suspension drive circuit (5) comprises that high pressure suspending drives chip I R2117, capacitor C 2, capacitor C 3, bootstrap diode D2, high pressure suspending drives the input pin IN of chip I R2117 to be connected with the output of load judgment circuit (4) comparator U, the lower end of the left end of capacitor C 2 and bootstrap diode D2, power supply VCC tandem, high pressure suspending drives the COM pin ground connection of chip I R2117, the upper end of bootstrap diode D2 and high pressure suspending drive the VB pin of chip I R2117, the left end tandem of capacitor C 3, high pressure suspending drives the output pin HO of chip I R2117 to be connected with the grid G of the metal-oxide-semiconductor T1 of controlled boost inductance (2), the right-hand member of capacitor C 3 drives the output of chip I R2117 to be connected with reference to ground VS with high pressure suspending.
As shown in Figure 4, for a kind of critical conduction full load high power factor correcting circuit the second embodiment of the present utility model, controlled boost inductance (2) comprises the first boost inductance L1, the second boost inductance L2, metal-oxide-semiconductor T1, it is characterized in that: the first boost inductance L1, the second boost inductance L2 is on same magnetic core, the non-same polarity of the second boost inductance L2, the drain D of metal-oxide-semiconductor T1 and the tandem of rectifier bridge output plus terminal, the source S of the non-same polarity of the first boost inductance L1 and metal-oxide-semiconductor T1, the output of suspension drive circuit is with reference to ground VS tandem, the Same Name of Ends of the Same Name of Ends of the first boost inductance L1 and the second boost inductance L2, the anode tandem of the booster diode D1 of critical conduction factor correction circuit, the grid G of metal-oxide-semiconductor T1 is connected with the output HO of suspension drive circuit, critical conduction power factor correction circuit (3) comprises booster diode D1, filter capacitor E1, metal-oxide-semiconductor T2, current sense resistor R1 and pfc controller, the anode of booster diode D1 is connected with the drain D of metal-oxide-semiconductor T2, the source S of metal-oxide-semiconductor T2 is connected with the upper end of current sense resistor R1, the output of pfc controller is connected with the grid G of metal-oxide-semiconductor T2, the negative electrode of booster diode is connected with the upper end of filter capacitor E1, the lower end tandem ground connection of the lower end of filter capacitor E1 and current sense resistor R1, load judgment circuit (4) comprises resistance R 2, resistance R 3, resistance R 4, capacitor C 1 and comparator U, the right-hand member of resistance R 2 is connected with the upper end of resistance R 1, the upper end of the left end of resistance R 2 and capacitor C 1, the anode tandem of comparator U, the left end of the upper end of resistance R 4 and resistance R 3, the negative terminal tandem of comparator U, the right-hand member of resistance R 3 is connected with power supply VCC, suspension drive circuit (5) comprises that high pressure suspending drives chip I R2117, capacitor C 2, capacitor C 3, bootstrap diode D2, high pressure suspending drives the input pin IN of chip I R2117 to be connected with the output of load judgment circuit (4) comparator U, the lower end of the left end of capacitor C 2 and bootstrap diode D2, power supply VCC tandem, high pressure suspending drives the COM pin ground connection of chip I R2117, the upper end of bootstrap diode D2 and high pressure suspending drive the VB pin of chip I R2117, the left end tandem of capacitor C 3, high pressure suspending drives the output pin HO of chip I R2117 to be connected with the grid G of the metal-oxide-semiconductor T1 of controlled boost inductance (2), the right-hand member of capacitor C 3 drives the output of chip I R2117 to be connected with reference to ground VS with high pressure suspending.
Engineering process of the present utility model is:
As shown in Figure 3, Figure 4, the electric current detecting when resistance R 1 is during in 50%-100% scope, comparator U output high level in load judgment circuit (4), it is also high level that suspension drive circuit (5) high pressure suspending drives the output of chip I R2117, the metal-oxide-semiconductor T1 conducting of controlled boost inductance (2), now, in Fig. 3, only has the second boost inductance L2 access power factor correction circuit, the first boost inductance L1, the second boost inductance access power factor correction in parallel circuit in Fig. 4; The electric current detecting when resistance R 1 is during in zero load to 49% scope, comparator U output low level in load judgment circuit (4), it is also low level that suspension drive circuit (5) high pressure suspending drives the output of chip I R2117, the metal-oxide-semiconductor T1 of controlled boost inductance (2) turn-offs, now, in Fig. 3, access power factor correction circuit after the first boost inductance L1 and the second boost inductance L2 series connection, only has the second boost inductance L2 access power factor correction circuit in Fig. 4.
It should be noted that above what enumerate is only specific embodiment of the utility model.Obviously, the utility model is not limited to above embodiment, can also have many distortion.All distortion that those of ordinary skill in the art can directly derive or associate from the disclosed content of the utility model, all should think protection range of the present utility model.

Claims (3)

1. a critical conduction full load high power factor correcting circuit, comprise rectifier bridge, controlled boost inductance, critical conduction power factor correction circuit, load judgment circuit, suspension drive circuit, be characterised in that: input line voltage is connected with rectifier bridge input, rectifier bridge output plus terminal is connected with controlled boost inductance input, controlled boost inductance output is connected with critical conduction power factor (PF) circuit, critical conduction power factor (PF) circuit output voltage V othe input of load judgment circuit is connected with critical conduction power factor correction circuit, the output of load judgment circuit is connected with the input of suspension drive circuit, the output of suspension drive circuit is connected with controlled boost inductance control end, earth terminal, the earth terminal of load judgment circuit, the tandem of critical conduction power factor correction circuit earth terminal of rectifier bridge output negative terminal and suspension drive circuit.
2. a kind of critical conduction full load high power factor correcting circuit according to claim 1, it is characterized in that: described controlled boost inductance comprises the first boost inductance L1, the second boost inductance L2, metal-oxide-semiconductor T1, the first boost inductance L1, the second boost inductance L2 is on same magnetic core, the non-same polarity of the first boost inductance L1, the drain D of metal-oxide-semiconductor T1 and the tandem of rectifier bridge output plus terminal, the non-same polarity of the Same Name of Ends of the first boost inductance L1 and the second boost inductance L2, the source S of metal-oxide-semiconductor T1, the output of suspension drive circuit is with reference to ground VS tandem, the anode of the booster diode D1 of the Same Name of Ends of the second boost inductance L2 and critical conduction factor correction circuit, the drain D tandem of the metal-oxide-semiconductor T2 of critical conduction factor correction circuit, the grid G of metal-oxide-semiconductor T1 is connected with the output HO of suspension drive circuit.
3. a kind of critical conduction full load high power factor correcting circuit according to claim 1, it is characterized in that: described controlled boost inductance comprises the first boost inductance L1, the second boost inductance L2, metal-oxide-semiconductor T1, the first boost inductance L1, the second boost inductance L2 is on same magnetic core, the non-same polarity of the second boost inductance L2, the drain D of metal-oxide-semiconductor T1 and the tandem of rectifier bridge output plus terminal, the source S of the non-same polarity of the first boost inductance L1 and metal-oxide-semiconductor T1, the output of suspension drive circuit is with reference to ground VS tandem, the Same Name of Ends of the Same Name of Ends of the first boost inductance L1 and the second boost inductance L2, the anode tandem of the booster diode D1 of critical conduction factor correction circuit, the grid G of metal-oxide-semiconductor T1 is connected with the output HO of suspension drive circuit.
CN201420100997.3U 2014-02-26 2014-02-26 Critical conduction full-load high-power factor correction circuit Expired - Fee Related CN203734523U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887963A (en) * 2014-02-26 2014-06-25 常州信息职业技术学院 Critical conduction full load high power factor correcting circuit
US20230318446A1 (en) * 2022-03-30 2023-10-05 Texas Instruments Incorporated Power factor correction

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887963A (en) * 2014-02-26 2014-06-25 常州信息职业技术学院 Critical conduction full load high power factor correcting circuit
CN103887963B (en) * 2014-02-26 2018-08-21 常州信息职业技术学院 Critical conduction full load high power factor correcting circuit
US20230318446A1 (en) * 2022-03-30 2023-10-05 Texas Instruments Incorporated Power factor correction

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140723

Termination date: 20150226

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