CN203722585U - High-efficiency wide-band power amplifier with band-pass filter responses - Google Patents
High-efficiency wide-band power amplifier with band-pass filter responses Download PDFInfo
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- CN203722585U CN203722585U CN201420078607.7U CN201420078607U CN203722585U CN 203722585 U CN203722585 U CN 203722585U CN 201420078607 U CN201420078607 U CN 201420078607U CN 203722585 U CN203722585 U CN 203722585U
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Abstract
The utility model discloses a high-efficiency wide-band power amplifier with band-pass filter responses. The high-efficiency wide-band power amplifier comprises a direct current bias circuit, a power amplification transistor, an input matching circuit and an output matching circuit. A microstrip band-pass filter with different port impedance and a section of tuning microstrip are designed to be used as the output matching circuit of the power amplifier, so that the circuit has the band-pass filter response characteristic while a filter function is finished, and two transmission zero points are produced on edges of a pass band. Compared with a traditional power amplifier and a filter cascade circuit, the high-efficiency wide-band power amplifier has the advantages that the microstrip band-pass filter is used as the output matching circuit, so that the whole circuit is small in size, low in loss and wide in working band; and the two transmission zero points exist, so that the power amplifier has the high edge selectivity. In an embodiment, the high-efficiency wide-band power amplifier with the band-pass filter responses is realized, and test result validation is provided.
Description
Technical field
The utility model relates to power amplifier and the Microstrip Bandpass Filter technical field in wireless system, is specifically related to a kind of high efficiency wideband power amplifer with bandpass filtering response.
Background technology
Power amplifier and Microstrip Bandpass Filter are the critical components that affects radio frequency transceiver performance, therefore existing a large amount of for the research that how to improve their performances.For power amplifier, power consumption and the efficiency of its efficiency to whole Circuits System has considerable influence, the efficiency that how to improve power amplifier is one of focus of research, and Microstrip Bandpass Filter is because its control ability to harmonic wave is popular in high efficiency power amplifier design.
Traditional research work is to improve how separately both performances, and conventionally in actual applications, Microstrip Bandpass Filter level is coupled to power amplifier afterwards for suppressing interfering frequency signal.Together with power amplifier and micro-band silk ribbon bandpass filter normally first match respectively 50 Ω level is coupled to again, adopt such cascade system mainly to have two problems: 1. the connection microstrip line between two circuit modules can be introduced loss; 2. whole circuit volume is bigger than normal.
In recent years, start to have research steering to pass through to replace power amplifier output matching circuit originally with Microstrip Bandpass Filter circuit, two circuit modules can integrated parts, thereby obtain compact volume and lower loss.For the power amplifier of integrated Microstrip Bandpass Filter, academic circles at present has proposed certain methods.According to " Y.C.Li, K.C.Wu, and Q.Xue, Power amplifier integrated with bandpass filter for long term evolution application, IEEE Microw.Wireless Compon.Lett., vol.23, no.8, pp.424 – 426, Aug.2013. " method adopting in literary composition, a Microstrip Bandpass Filter is integrated in power amplifier as quarter wavelength impedance transducer, but, this Microstrip Bandpass Filter performance is not good, and because this Microstrip Bandpass Filter can only be realized 90 ° of phse conversions in center frequency points, thereby cause limited bandwidth.According to " K.Chen; J.Lee; W.J.Chappell; and D.Pertoulis; Co-design of highly efficient power amplifier and high-Q output bandpass filter; IEEE Trans.Microw.Theory Tech., vol.61, no.11, pp.3940 – 3950, Nov.2013. " use the cavity resonator of high Q value in order to improve the performance of Microstrip Bandpass Filter, but will make thus the bigger than normal and processed complex of circuit volume, and relative bandwidth is only 3%.
Utility model content
The purpose of this utility model is to have problems for prior art, a kind of high efficiency wideband power amplifer with bandpass filtering response is provided, by DC bias circuit, power amplifying transistor, input matching circuit and output matching circuit, DC bias circuit and input matching circuit are electric capacity, the element compositions such as resistance, described Microstrip Bandpass Filter and described tuning microstrip line form the described high efficiency wideband power amplifer output matching circuit with bandpass filtering response, set it as an impedance transformer, by regulating input port and the output port position of described Microstrip Bandpass Filter, can obtain different port impedance and realize good bandpass filtering response characteristic.
The high efficiency wideband power amplifer with bandpass filtering response proposing in the utility model, main utility model content is its output matching circuit, the utility model is provided by the Microstrip Bandpass Filter providing.
Described Microstrip Bandpass Filter is made up of two half-wave resonator, be called input resonator and output resonator, two half-wave resonator are open loop structure, and vertical axes symmetric relation each other, input resonator is by the first microstrip line, the second microstrip line, the 3rd microstrip line, the 4th microstrip line, the 5th microstrip line, the 6th microstrip line, the 7th microstrip line, the 8th microstrip line, the 9th microstrip line, the tenth microstrip line, the 11 microstrip line, the 12 microstrip line, the 13 microstrip line and the 14 microstrip line connect to form in order, in order to dwindle circuit area, between the input resonator microstrip line connected with output resonator, adopt vertical fold line formula to be connected, as the first microstrip line, the second microstrip line, the 3rd microstrip line, the 4th microstrip line, the 5th microstrip line, the 6th microstrip line and the 7th microstrip line are integrated and connected and present 3 " n " type structures to reduce circuit area, the composition of output resonator and input resonator are mirror image symmetry, in the time observing from horizontal axis, input resonator and output resonator are all for trunnion axis symmetry, input resonator is coupled with the 15 microstrip line and the 16 microstrip line of output resonator respectively by the 14 microstrip line and the first microstrip line, realize the microstrip line parallel relation each other of coupling, the input port of described Microstrip Bandpass Filter is directly connected on input resonator, the output port of described Microstrip Bandpass Filter is connected with output resonator, link position is according to the Input matching of Microstrip Bandpass Filter and output matching adjustment, the quarter-wave of being simultaneously separated by between the open circuit end (end of the first microstrip line and the 14 microstrip line) of input resonator and input port, make the passband edge of described Microstrip Bandpass Filter can produce two transmission zeros, high selectivity is provided.
The analysis providing according to " K.Chen; J.Lee, W.J.Chappell, and D.Pertoulis; Co-design of highly efficient power amplifier and high-Q output bandpass filter; IEEE Trans.Microw.Theory Tech., vol.61, no.11; pp.3940 – 3950; Nov.2013. " is known, for described Microstrip Bandpass Filter, because its coupling matrix can be expressed as:
Wherein, MS1 is the coupling parameter between source and input resonator, and M11 and M22 are asynchronous tuner parameters, and M12 and M21 are the coupling parameter between input resonator and output resonator, and M2L is the coupling parameter between output resonator and load.For a synchronously tuned filter, M
11=M
22=0, thus input impedance can be expressed as:
Require input impedance to be for one
filter, only need in the situation that keeping other parameter constant, change M
s1.Meanwhile, M
s1can be expressed as
wherein Q
einfor input external sort factor, FBW is relative bandwidth.Thus, we can obtain:
Can find out, in the time that input impedance is different, as long as by regulating Q
einjust can obtain with port Impedance is the response that the filter of 50 Ω is identical.For the Microstrip Bandpass Filter described in the utility model, its Q
einvalue depends primarily on the port position on each resonator in Fig. 1, i.e. the value of the spacing 20 in Fig. 1 and spacing 21.Therefore, as long as the port of each resonator is adjusted to correct position, can obtain suitable port Impedance, the Microstrip Bandpass Filter proposing in the utility model just can be used as the output matching circuit of described power amplifier, realize the real part coupling of optimum efficiency impedance matching point, imaginary part coupling can be by adopting described tuning microstrip line compensation, and the imaginary part size that its length is put by optimum efficiency impedance matching determines.
By described Microstrip Bandpass Filter, the described output matching of power amplifier circuit with bandpass filtering response and higher efficiency can be simplified and cumulative volume can significantly reduce.In addition, can save at the described cascade connecting line having between bandpass filtering response and higher efficiency power amplifier and described Microstrip Bandpass Filter, although need described tuning microstrip line to carry out the imaginary part coupling of optimum efficiency impedance matching point, bandpass filtering responds and higher efficiency power amplifier obtains lower loss and the efficiency of Geng Gao in described having.There is bandpass filtering response and higher efficiency power amplifier prototype by realizing one in an embodiment, and provide performance simulation and test result.
With respect to existing correlation technique, what the utility model proposed have, and bandpass filtering response and higher efficiency power amplifier tool have the following advantages:
(1) circuit volume is little.With respect to traditional by the structure of power amplifier and Microstrip Bandpass Filter cascade, described in being embedded in described band pass filter circuit, the utility model realization has in the output matching circuit of bandpass filtering response and higher efficiency power amplifier, simplify circuit structure, dwindle circuit volume.
(2) circuit loss is little.With respect to traditional by the structure of power amplifier and Microstrip Bandpass Filter cascade, described in being embedded in described band pass filter circuit, the utility model realization has in the output matching circuit of bandpass filtering response and higher efficiency power amplifier, the connection microstrip line that has saved traditional cascade structure, reduces loss.
(3) bandwidth of operation is wide.With respect to existing Microstrip Bandpass Filter and the integrated technology of power amplifier, the input port of Microstrip Bandpass Filter described in the utility model can be realized matched well for the port of power amplifying transistor in continuous operation frequency band, thereby realizes broadband character.
(4) circuit efficiency is high.With respect to existing job family, the circuit efficiency with bandpass filtering response and higher efficiency power amplifier described in the utility model is high.
Brief description of the drawings
Fig. 1 is the described asymmetrical Microstrip Bandpass Filter structural representation of port;
Fig. 2 has bandpass filtering response and higher efficiency power amplifier embodiment block diagram described in being;
Fig. 3 is the embodiment schematic diagram of the described asymmetrical Microstrip Bandpass Filter of port;
Fig. 4 is the filter response figure of the described asymmetrical Microstrip Bandpass Filter embodiment of port;
Fig. 5 is that the described bandpass filtering that has responds and S parameters simulation result and the test result of higher efficiency power amplifier embodiment under small signal driving;
Fig. 6 has power output, gain and the PAE(Power Added Efficiency of bandpass filtering response and higher efficiency power amplifier embodiment, power added efficiency described in being) simulation result and test result.
Embodiment
Below in conjunction with accompanying drawing and example, enforcement of the present utility model is described further, but protection range of the present utility model is not limited to following embodiment.
The high efficiency wideband power amplifer with bandpass filtering response proposing in the utility model, main utility model content is its output matching circuit, the utility model is provided by the Microstrip Bandpass Filter providing.
Described Microstrip Bandpass Filter is made up of two half-wave resonator, its structural representation as shown in Figure 1, be called input resonator 101 and output resonator 102, or input resonator 101 and output resonator 102, two half-wave resonator are open loop structure, and vertical axes symmetric relation each other, input resonator 101 is by the first microstrip line 1, the second microstrip line 2, the 3rd microstrip line 3, the 4th microstrip line 4, the 5th microstrip line 5, the 6th microstrip line 6, the 7th microstrip line 7, the 8th microstrip line 8, the 9th microstrip line 9, the tenth microstrip line 10, the 11 microstrip line 11, the 12 microstrip line 12, the 13 microstrip line the 13 and the 14 microstrip line 14 connects to form in order, in order to dwindle circuit area, between input resonator 101 and the connected microstrip line of output resonator 102, adopt vertical fold line formula to be connected, as the first microstrip line 1, the second microstrip line 2, the 3rd microstrip line 3, the 4th microstrip line 4, the 5th microstrip line 5, the 6th microstrip line 6 and the 7th microstrip line 7 are integrated and connected and present 3 N-shaped structures to dwindle circuit area, the composition of output resonator 102 and input resonator 101 are mirror image symmetry, in the time observing from horizontal axis, input resonator 101 and output resonator 102 are all for trunnion axis symmetry, input resonator 101 is coupled with the 15 microstrip line the 15 and the 16 microstrip line 16 of output resonator 102 respectively by the 14 microstrip line 14 and the first microstrip line 1, realize the microstrip line parallel relation each other of coupling, the input port 19 of described Microstrip Bandpass Filter is directly connected on input resonator 101, the output port 18 of described Microstrip Bandpass Filter is connected with output resonator 102, link position is according to the Input matching of Microstrip Bandpass Filter and output matching adjustment, the quarter-wave of being simultaneously separated by between the open circuit end (end of the first microstrip line 1 and the 14 microstrip line 14) of input resonator 101 and input port 19, make the passband edge of described Microstrip Bandpass Filter can produce two transmission zeros, high selectivity is provided.
Below in conjunction with the utility model embodiment and accompanying drawing, the utility model is described in further detail, but the claimed scope of the utility model is not limited to the scope of lower example statement.
Described in showing, Fig. 2 there is bandpass filtering response and higher efficiency power amplifier embodiment block diagram, the GaN HEMT CGH40010F that the power amplifying transistor 103 of selecting in embodiment is Cree company, this power amplifying transistor has three electrodes, be respectively grid G, drain D and source S, the input of circuit, output, grid G DC offset voltage V
gS, drain D DC offset voltage V
dSas noted in Fig. 2, the DesignKit of the power amplifying transistor CGH40010F providing by use Cree company carries out emulation in software Agilent Advanced Design System (ADS), and grid G DC offset voltage and the drain D DC offset voltage of power amplifying transistor CGH40010F are chosen to be respectively V
gS=-2.5V and V
dS=28V, for obtaining the optimum efficiency impedance matching point when the operating frequency 2.45GHz, utilize ADS software to carry out load-pull (load traction) emulation to circuit, the optimum source impedance and the optimum load impedance that obtain power amplifying transistor CGH40010F are respectively Z
source=(35.885-j*4.687) Ω and Z
load=(12.218-j*1.323) Ω.
Described have quiescent biasing circuit and input matching circuit in bandpass filtering response and higher efficiency power amplifier embodiment and all adopt classical mode to design, the first electric capacity 23, the second electric capacity 24, the 3rd electric capacity 25, described in connecting to form in order, the 26 microstrip line 26 and the first resistance 27 there is the quiescent biasing circuit of bandpass filtering response and higher efficiency power amplifier 104 inputs, the 4th electric capacity 28, the 29 microstrip line 29, the second resistance 31, described in connecting to form successively, the 5th electric capacity 30 there is the input matching circuit of bandpass filtering response and higher efficiency power amplifier, the 35 microstrip line 35, described in connecting to form in order, the 6th electric capacity 36 and the 7th electric capacity 37 there is the quiescent biasing circuit of bandpass filtering response and higher efficiency power amplifier output, the 33 microstrip line the 33 and the 34 microstrip line 34 is for grid and the drain electrode of bonding power amplifier transistor 102, the 5th electric capacity 30, circuit stability when the second resistance 31 and the first resistance 27 are operated in low-frequency range for having bandpass filtering response and higher efficiency power amplifier described in improving, the first electric capacity 23, the second electric capacity 24 and the 3rd electric capacity 25 are for the decoupling of the described quiescent biasing circuit with bandpass filtering response and higher efficiency power amplifier input, similarly, the 6th electric capacity 36 and the 7th electric capacity 37 are for the decoupling of the quiescent biasing circuit of the described output with bandpass filtering response and higher efficiency power amplifier, the 26 microstrip line the 26 and the 30 microstrip line 35 is quatrter-wavelength line, and the 26 microstrip line the 26 and the 30 microstrip line the 35 and the 32 microstrip line 32, the 33 microstrip line the 33 and the 34 microstrip line is in a vertical connection, described in being used for, there is the quiescent biasing of the power amplifying transistor of bandpass filtering response and higher efficiency power amplifier working frequency range, make quiescent biasing circuit present open-circuit condition for radiofrequency signal, realize the isolation of radiofrequency signal and DC power supply, in addition, the 35 microstrip line 35 provides short circuit paths to improve circuit efficiency to second harmonic.Fig. 3 shows the embodiment schematic diagram of the described asymmetrical Microstrip Bandpass Filter of port, and the tuning microstrip line 38 in what Fig. 2 showed have Microstrip Bandpass Filter and Fig. 2 that the output matching circuit in bandpass filtering response and higher efficiency power amplifier embodiment shown by Fig. 3 forms.
The bandpass filtering that has of the present embodiment responds and higher efficiency power amplifier, and processing selects the parameter of dielectric material as follows: relative dielectric constant is 2.33, and thickness is 0.78mm, and loss tangent value is 0.002.The component value with element used in bandpass filtering response and higher efficiency power amplifier embodiment of Fig. 2 displaying is as follows, the 4th electric capacity 28 is 1.2pF, the 5th electric capacity 30 is 7.5pF, the first electric capacity 23 is 4700pF, the second electric capacity 24 is 47pF, the 3rd electric capacity 25 is 10pF, the 6th electric capacity 36 is 3300pF, the 7th electric capacity 37 is 47pF, the first resistance 27 is 68 Ω, the second resistance 31 is 10 Ω, the length of the 29 microstrip line 29 and width are respectively 9mm and 2.37mm, the length of the 32 microstrip line 32 and width are 3.5mm and 5mm, the length of the 33 microstrip line 33 and width are respectively 2mm and 5mm, the length of the 26 microstrip line 26 and width are respectively 22.3mm0.7mm, the length of the 34 microstrip line 34 and width are respectively 9mm and 5mm, the length of the 35 microstrip line 35 and width are respectively 22.3mm, and 0.7mm, the length of the 38 microstrip line 38 and width are respectively 4mm and 5mm.
Fig. 3 shows the embodiment schematic diagram of the described asymmetrical Microstrip Bandpass Filter of port, tuning microstrip line 38 in what Fig. 2 showed have Microstrip Bandpass Filter and Fig. 2 that the output matching circuit in bandpass filtering response and higher efficiency power amplifier embodiment shown by Fig. 3 forms, following (unit is mm): the W1=2.37 of dimensions of Fig. 3, W2=0.5, L1=3.15, L2=6.8, L3=1, G1=0.15, the whole circuit size of the Microstrip Bandpass Filter that Fig. 3 shows is 57mm × 42mm or 0.65 λ
g× 0.48 λ
g, wherein λ
gguide wavelength during for 2.45GHz.Fig. 4 shows the filter response figure of the described asymmetrical Microstrip Bandpass Filter embodiment of port, and the Microstrip Bandpass Filter that Fig. 3 shows is at input impedance Z
inmatching performance figure when variation, as can be seen from Figure 4, although Z
inwhen=50 Ω, performance is undesirable, but works as Z
inwhile variation within the scope of from 9 Ω to 17 Ω, the Microstrip Bandpass Filter embodiment that Fig. 3 shows presents matched well response, and the real part with bandpass filtering response and the desired optimum efficiency impedance matching point of higher efficiency power amplifier embodiment of showing for Fig. 2 is about 12 Ω, be contained in this matching range, the major part of what the Microstrip Bandpass Filter embodiment that therefore Fig. 3 can be shown can action diagram 2 shows the have output matching circuit of power amplifying transistor in bandpass filtering response and higher efficiency power amplifier embodiment, realize the real part coupling of the optimum efficiency impedance matching point with bandpass filtering response and higher efficiency power amplifier embodiment of Fig. 2 displaying, and add described resonance line (Tuning line) at circuit, it is the 38 microstrip line 38 in Fig. 2, can compensate the imaginary part coupling of this optimum efficiency impedance point.Because input resonator 101 and the output resonator 102 of described Microstrip Bandpass Filter use coupled structure, itself there is DC power supply and output isolation, thereby saved the DC-isolation electric capacity of output.In addition the Microstrip Bandpass Filter embodiment that, Fig. 3 shows is for working as Z
inwhile variation within the scope of from 9 Ω to 17 Ω, present the characteristic of good response, may be used on, in the match circuit with bandpass filtering response and higher efficiency power amplifier embodiment continually varying wideband power amplifer because optimum efficiency matched impedance changes continuously with operating frequency of Fig. 2 displaying, realizing the Broadband Matching that working frequency range is good.
Fig. 3 shows that the embodiment of the described asymmetrical Microstrip Bandpass Filter of port uses software I E3D to carry out emulation, and emulation gained S parameter is imported to having that ADS and Fig. 2 show, and bandpass filtering responds and higher efficiency power amplifier embodiment carries out associative simulation.Fig. 5 shows that the described bandpass filtering that has responds and S parameters simulation result and the test result of higher efficiency power amplifier embodiment under small signal driving, can find out, bandpass filtering response that what Fig. 2 showed have and the centre frequency 2.45GHz place of higher efficiency power amplifier embodiment in working frequency range have the small signal gain of about 16.4dB, are with interior echo differential loss to be greater than 13dB.The 1-dB bandwidth of circuit is 2.1-2.7GHz, and relative bandwidth 25% covers WiFi, the communications band of TD-LTE and WCDM.Because Fig. 3 shows that the microstrip line length between resonator open end and the input port on the left side in the embodiment of the described asymmetrical Microstrip Bandpass Filter of port is 1/4 wavelength, therefore that shows in Fig. 5 has two transmission zeros of passband edge appearance in S parameters simulation result under small signal driving of bandpass filtering response and higher efficiency power amplifier embodiment and test result curve chart, thereby the high selectivity of realization.Described in Fig. 6 shows, there is bandpass filtering response and higher efficiency power amplifier embodiment input power power output, gain and the PAE(Power Added Efficiency from 10 to 29dBm time, power added efficiency) simulation result and test result.As can be seen from Figure 6, circuit gain starts compression at Pin=24dBm, and the maximum PAE value of circuit is about 69.8%, and corresponding power output is 40.1dBm, gains as 11.8dB.
What Fig. 2 showed has bandpass filtering response and higher efficiency power amplifier embodiment, there is bandpass filtering response characteristic, circuit efficiency is high, the more important thing is that Fig. 3 shows that the embodiment of the described asymmetrical Microstrip Bandpass Filter of port makes the output matching circuit size decreases in Fig. 2, make that Fig. 2 shows there is bandpass filtering response and the whole circuit size of higher efficiency power amplifier embodiment diminishes, and realize Broadband Matching in working frequency range.
Above disclosed is only the utility model preferred embodiment, certainly can not limit with this right model of the utility model, and the equivalent variations of therefore doing according to the utility model claim, still belongs to the scope that the utility model is contained.
Claims (3)
1. one kind has the high efficiency wideband power amplifer of bandpass filtering response, comprise DC bias circuit, power amplifying transistor, input matching circuit and output matching circuit, it is characterized in that, described output matching circuit has used Microstrip Bandpass Filter to add the tuning microstrip line of the preceding paragraph, described Microstrip Bandpass Filter is made up of two symmetrical open-loop resonators, two open-loop resonators are half-wave resonator, on each open-loop resonator, all there is a port, be respectively input port and output port, the input port of described Microstrip Bandpass Filter and output port position are asymmetric.
2. a kind of high efficiency wideband power amplifer with bandpass filtering response according to claim 1, it is characterized in that, described tuning microstrip line is connected between described Microstrip Bandpass Filter and power amplifying transistor, imaginary part that the length of tuning microstrip line is put by optimum efficiency impedance matching size determines, tuning microstrip line forms output matching circuit with described Microstrip Bandpass Filter.
3. a kind of high efficiency wideband power amplifer with bandpass filtering response according to claim 1, it is characterized in that, described Microstrip Bandpass Filter is made up of two half-wave resonator, be called input resonator (101) and output resonator (102), two half-wave resonator are open loop structure, and vertical axes symmetric relation each other, input resonator (101) is by the first microstrip line (1), the second microstrip line (2), the 3rd microstrip line (3), the 4th microstrip line (4), the 5th microstrip line (5), the 6th microstrip line (6), the 7th microstrip line (7), the 8th microstrip line (8), the 9th microstrip line (9), the tenth microstrip line (10), the 11 microstrip line (11), the 12 microstrip line (12), the 13 microstrip line (13) and the 14 microstrip line (14) connect to form in turn, between input resonator (101) and the connected microstrip line of output resonator (102), adopt vertical fold line formula to be connected, as the first microstrip line (1), the second microstrip line (2), the 3rd microstrip line (3), the 4th microstrip line (4), the 5th microstrip line (5), the 6th microstrip line (6) and the 7th microstrip line (7) are integrated and connected and present 3 N-shaped structures, the composition of output resonator (102) and input resonator (101) are mirror image symmetry, input resonator (101) is coupled with the 15 microstrip line (15) and the 16 microstrip line (16) of output resonator (102) respectively by the 14 microstrip line (14) and the first microstrip line (1), realize the microstrip line parallel relation each other of coupling, the input port (19) of described Microstrip Bandpass Filter is directly connected on input resonator (101), the output port (18) of described Microstrip Bandpass Filter is connected with output resonator (102), link position is according to the Input matching of Microstrip Bandpass Filter and output matching adjustment, the quarter-wave of being simultaneously separated by between the open circuit end of input resonator (101) and input port.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103825564A (en) * | 2014-02-24 | 2014-05-28 | 华南理工大学 | High-efficiency wideband power amplifier with band-pass filter response function |
| CN106067768A (en) * | 2016-08-12 | 2016-11-02 | 成都泰格微电子研究所有限责任公司 | Mesh power amplifier in broadband |
| CN106982038A (en) * | 2017-04-25 | 2017-07-25 | 华南理工大学 | A kind of high efficiency filtered power amplifier |
| CN107493082A (en) * | 2017-08-31 | 2017-12-19 | 电子科技大学 | A kind of dual-passband amplifier |
| CN108847825A (en) * | 2018-04-25 | 2018-11-20 | 中国电子科技集团公司第五十五研究所 | Transistor recommends pair and recommends the radio frequency amplifying circuit to structure with this |
| CN109167582A (en) * | 2018-07-23 | 2019-01-08 | 华南理工大学 | Broadband bandpass filtering power amplifier based on frequency selectivity coupling |
| CN109510606A (en) * | 2018-12-29 | 2019-03-22 | 北京小米移动软件有限公司 | Cascade circuit |
| CN112305507A (en) * | 2019-08-02 | 2021-02-02 | 上海航天电子通讯设备研究所 | Radar receiving and transmitting assembly using gallium nitride power amplifier |
| CN113346852A (en) * | 2021-05-19 | 2021-09-03 | 北京邮电大学 | Fully-integrated band-pass filtering radio frequency power amplifier chip |
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| CN103825564B (en) * | 2014-02-24 | 2017-01-18 | 华南理工大学 | High-efficiency wideband power amplifier with band-pass filter response function |
| CN103825564A (en) * | 2014-02-24 | 2014-05-28 | 华南理工大学 | High-efficiency wideband power amplifier with band-pass filter response function |
| CN106067768A (en) * | 2016-08-12 | 2016-11-02 | 成都泰格微电子研究所有限责任公司 | Mesh power amplifier in broadband |
| CN106067768B (en) * | 2016-08-12 | 2023-03-07 | 成都泰格微电子研究所有限责任公司 | Broadband internal matching power amplifier |
| CN106982038A (en) * | 2017-04-25 | 2017-07-25 | 华南理工大学 | A kind of high efficiency filtered power amplifier |
| CN106982038B (en) * | 2017-04-25 | 2023-05-23 | 华南理工大学 | High-efficiency filtering power amplifier |
| CN107493082A (en) * | 2017-08-31 | 2017-12-19 | 电子科技大学 | A kind of dual-passband amplifier |
| CN108847825B (en) * | 2018-04-25 | 2022-01-14 | 中国电子科技集团公司第五十五研究所 | Transistor push-pull pair and radio frequency amplifying circuit with same |
| CN108847825A (en) * | 2018-04-25 | 2018-11-20 | 中国电子科技集团公司第五十五研究所 | Transistor recommends pair and recommends the radio frequency amplifying circuit to structure with this |
| CN109167582A (en) * | 2018-07-23 | 2019-01-08 | 华南理工大学 | Broadband bandpass filtering power amplifier based on frequency selectivity coupling |
| CN109167582B (en) * | 2018-07-23 | 2021-09-03 | 华南理工大学 | Broadband band-pass filtering power amplifier based on frequency selective coupling |
| CN109510606A (en) * | 2018-12-29 | 2019-03-22 | 北京小米移动软件有限公司 | Cascade circuit |
| CN112305507A (en) * | 2019-08-02 | 2021-02-02 | 上海航天电子通讯设备研究所 | Radar receiving and transmitting assembly using gallium nitride power amplifier |
| CN113346852A (en) * | 2021-05-19 | 2021-09-03 | 北京邮电大学 | Fully-integrated band-pass filtering radio frequency power amplifier chip |
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