CN203720310U - MOS tube test circuit - Google Patents
MOS tube test circuit Download PDFInfo
- Publication number
- CN203720310U CN203720310U CN201320890640.5U CN201320890640U CN203720310U CN 203720310 U CN203720310 U CN 203720310U CN 201320890640 U CN201320890640 U CN 201320890640U CN 203720310 U CN203720310 U CN 203720310U
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- Prior art keywords
- terminal
- mos tube
- test circuit
- voltage
- oxide
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- Expired - Lifetime
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- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The utility model relates to an MOS tube test circuit which is used for testing parameters of an MOS tube. The objective of the MOS tube test circuit is that testing of the multiple parameters of the MOS tube is realized by the simple circuit so that the MOS tube test circuit is provided. The MOS tube test circuit comprises a G terminal, a D terminal and an S terminal which are used for accessing of pins of the MOS tube. The MOS tube test circuit is characterized by comprising an adjustable power supply, of which the positive electrode is connected with the D terminal and the negative electrode is connected with the S terminal; a voltage display device which displays voltage between the D terminal and the S terminal; an ammeter which is connected in series with the D terminal; and a switch which can be operated to enable the G terminal to be switched between being connected with the D terminal and the S terminal. The beneficial effects are that: in order to test the three parameters of VGS, VDSS and IDSS, one gear shifting switch and three relays are needed to be adopted to perform switching in the prior art, and only one switch is needed to be adopted to perform switching in the MOS tube test circuit so that the test circuit is simplified.
Description
Technical field
The utility model relates to metal-oxide-semiconductor test circuit, for the parameter of test MOS pipe.
Background technology
About the test of metal-oxide-semiconductor parameter, taking the metal-oxide-semiconductor of certain model as example:
The test condition of V parameter GS is that metal-oxide-semiconductor d, s two voltage across poles equal g, s two voltage across poles, and d electrode current is 250 μ A, and the voltage of the g now recording, s two interpolars is exactly required VGS;
The test condition of V parameter DSS is that g, s two voltage across poles of metal-oxide-semiconductor are 0, and d electrode current is 250 μ A, and the d recording under this condition, s two voltage across poles are exactly required VDSS;
The test condition of parameter I DSS is that g, s two voltage across poles of metal-oxide-semiconductor are 0, and d, s two voltage across poles be 600V, and the d electrode current recording under this condition is exactly required IDSS.
Visible, different parameter, its test condition is not identical, therefore need to adopt the circuit of different syndetons.
In order to facilitate the parameters of test MOS pipe, existing special testing apparatus, it has different gears and selects for operating personnel.In the time that needs are tested VGS, operating personnel are with regard to the VGS shelves on selection equipment, device interior is just by the relay being connected with VGS shelves, each contacting or disconnection in automatic control circuit, adjust d, s two voltage across poles to equaling g, s two voltage across poles, and the circuit of electric current 250 μ A is provided to the d utmost point, now automatically to record the voltage of g, s two interpolars be required VGS to device interior.In the time that needs are tested other parameter, operating personnel, with regard to other corresponding gear on selection equipment, adjust the circuit that meets relevant parameter test condition.
Visible, in order to test multiple parameters, testing apparatus need to be equipped with multiple relay coils and contact, so, just has a lot of coils and contact in the internal circuit of testing apparatus, cause manufacturing cost higher, and the point easily breaking down is many.
Summary of the invention
The purpose of this utility model is to realize the test of the multiple parameters of metal-oxide-semiconductor with simple circuit.
Provide metal-oxide-semiconductor test circuit for this reason, comprise for the G end to the access of metal-oxide-semiconductor pin, D end and S end, it is characterized in that, comprising:
Regulated power supply, its positive pole connects D end, and negative pole connects S end;
Voltage display device, it shows the voltage between D end and S end;
Reometer, it is serially connected with D end;
Switch, it can be allowed G end be communicated with D end and to be communicated with switching between S end by operation.
When operator needs test parameter VGS, only need be switching over to allowing G end be communicated with D end, metal-oxide-semiconductor d, s two voltage across poles just equal g, s two voltage across poles, then power adjustment to reometer are shown to the desired current value of test condition, meet the test condition of V parameter GS.Because G end has been communicated with D end, so the voltage between D end and S end that now voltage display device shows has just equaled required VGS.
When operator needs test parameter VDSS, only need be switching over to allowing G end be communicated with S end, the g of metal-oxide-semiconductor, s two voltage across poles are just 0, then power adjustment to reometer is shown to the desired current value of test condition, meet the test condition of V parameter DSS, that now voltage display device shows has been exactly required VDSS.
When operator needs test parameter IDSS, only need be switching over to allowing G end be communicated with S end, the g of metal-oxide-semiconductor, s two voltage across poles are just 0, then power adjustment to voltage display device is shown to the desired magnitude of voltage of test condition, meet the test condition of parameter I DSS, that now reometer shows has been exactly required IDSS.
Beneficial effect: in order to test these three parameters of VGS, VDSS and IDSS, prior art need to adopt a shifting switch and three relays to switch, the utility model only needs to adopt a switch to switch, and has simplified test circuit.
Brief description of the drawings
Fig. 1 is the circuit diagram of metal-oxide-semiconductor test circuit.
Embodiment
Taking the metal-oxide-semiconductor of certain model of providing in background technology as example, test it, first the g utmost point of metal-oxide-semiconductor, the d utmost point and the s utmost point are accessed respectively to G end, D end and the S end of the metal-oxide-semiconductor test circuit in Fig. 1.In Fig. 1, regulated power supply BAT positive pole connects D end, and negative pole connects S end, and voltage display device V shows the voltage between D end and S end, and reometer A is serially connected with D end.Switch has stiff end and movable end, and stiff end connects G end, and when switching over is during to K1 shelves, movable end just switches to D end, and when switching over is during to K2 shelves, movable end just switches to S end.
The test condition of V parameter GS is that metal-oxide-semiconductor d, s two voltage across poles equal g, s two voltage across poles, and d electrode current Id is 250 μ A, and the voltage of the g now recording, s two interpolars is exactly required VGS.When operator needs test parameter VGS, switching over, to K1 shelves, G end has just been communicated with D end, and metal-oxide-semiconductor d, s two voltage across poles just equal g, s two voltage across poles, then power supply BAT are adjusted to reometer A and show 250 μ A, meet the test condition of V parameter GS.Because G end has been communicated with D end, so the voltage between D end and S end that now voltage display device V shows has just equaled required VGS.
The test condition of V parameter DSS is that g, s two voltage across poles of metal-oxide-semiconductor are 0, and d electrode current Id is 250 μ A, and the d recording under this condition, s two voltage across poles are exactly required VDSS.When operator needs test parameter VDSS, only need be switching over to K2 shelves, G end has just been communicated with D end, the g of metal-oxide-semiconductor, s two voltage across poles are just 0, then power supply BAT is adjusted to reometer A and shows 250 μ A, meet the test condition of V parameter DSS, that now voltage display device V shows has been exactly required VDSS.
The test condition of parameter I DSS is that g, s two voltage across poles of metal-oxide-semiconductor are 0, and d, s two voltage across poles be 600V, and the d electrode current recording under this condition is exactly required IDSS.When operator needs test parameter IDSS, only need be switching over to K2 shelves, G end has just been communicated with D end, the g of metal-oxide-semiconductor, s two voltage across poles are just 0, then power supply BAT is adjusted to voltage display device V and shows 600V, meet the test condition of parameter I DSS, that now reometer A shows has been exactly required IDSS.
If regulated power supply BAT can show the output voltage of self, can double as voltage display device, without voltage display device is set separately as above-described embodiment.
Claims (3)
1.MOS pipe test circuit, comprises for the G end to the access of metal-oxide-semiconductor pin, D end and S end, it is characterized in that, comprising:
Regulated power supply, its positive pole connects D end, and negative pole connects S end;
Voltage display device, it shows the voltage between D end and S end;
Reometer, it is serially connected with D end;
Switch, it can be allowed G end be communicated with D end and to be communicated with switching between S end by operation.
2. metal-oxide-semiconductor test circuit according to claim 1, is characterized in that, regulated power supply doubles as described voltage display device.
3. metal-oxide-semiconductor test circuit according to claim 1, is characterized in that, switch has stiff end and movable end, and stiff end connects G end, and movable end switches between D end and S end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320890640.5U CN203720310U (en) | 2013-12-31 | 2013-12-31 | MOS tube test circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320890640.5U CN203720310U (en) | 2013-12-31 | 2013-12-31 | MOS tube test circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203720310U true CN203720310U (en) | 2014-07-16 |
Family
ID=51159451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320890640.5U Expired - Lifetime CN203720310U (en) | 2013-12-31 | 2013-12-31 | MOS tube test circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203720310U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109239567A (en) * | 2018-10-12 | 2019-01-18 | 福建星云电子股份有限公司 | Detection system a kind of while that multiple metal-oxide-semiconductors are matched |
| CN110441668A (en) * | 2019-08-19 | 2019-11-12 | 西安易恩电气科技有限公司 | A kind of high-power IGBT test macro |
-
2013
- 2013-12-31 CN CN201320890640.5U patent/CN203720310U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109239567A (en) * | 2018-10-12 | 2019-01-18 | 福建星云电子股份有限公司 | Detection system a kind of while that multiple metal-oxide-semiconductors are matched |
| CN109239567B (en) * | 2018-10-12 | 2023-09-12 | 福建星云电子股份有限公司 | Detection system for simultaneously pairing multiple MOS tubes |
| CN110441668A (en) * | 2019-08-19 | 2019-11-12 | 西安易恩电气科技有限公司 | A kind of high-power IGBT test macro |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140716 |
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| CX01 | Expiry of patent term |