CN203690985U - Power generation device utilizing heat emitted by semiconductor plant growth lamp - Google Patents

Power generation device utilizing heat emitted by semiconductor plant growth lamp Download PDF

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Publication number
CN203690985U
CN203690985U CN201320832460.1U CN201320832460U CN203690985U CN 203690985 U CN203690985 U CN 203690985U CN 201320832460 U CN201320832460 U CN 201320832460U CN 203690985 U CN203690985 U CN 203690985U
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CN
China
Prior art keywords
plant growth
growth lamp
semiconductor plant
power generation
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201320832460.1U
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Chinese (zh)
Inventor
王星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGSU HUISHENG LIGHTING TECHNOLOGY Co Ltd
Original Assignee
JIANGSU HUISHENG LIGHTING TECHNOLOGY Co Ltd
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Publication date
Application filed by JIANGSU HUISHENG LIGHTING TECHNOLOGY Co Ltd filed Critical JIANGSU HUISHENG LIGHTING TECHNOLOGY Co Ltd
Priority to CN201320832460.1U priority Critical patent/CN203690985U/en
Application granted granted Critical
Publication of CN203690985U publication Critical patent/CN203690985U/en
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Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to a power generation device utilizing heat emitted by a semiconductor plant growth lamp, and belongs to the technology field of power generation. The power generation device mainly adopts thermovoltaic batteries to absorb the heat generated by the semiconductor plant growth lamp to generate electricity. The power generation device comprises the semiconductor plant growth lamp 1. A power generation assembly comprised of a plurality of thermovoltaic batteries 2 connected with one another is arranged on the heat radiation surface of the semiconductor plant growth lamp 1. The power generation assembly is connected to a storage battery 4 through a battery connecting lines 3. The spacing between the thermovoltaic batteries and the heat radiation surface of the semiconductor plant growth lamp 1 is less than 10mm. The power generation device adopts thermovoltaic batteries to absorb the heat generated by the semiconductor plant growth lamp to generate electricity, and has a simple structure. The requirement of plant growth can be satisfied, and the power saving purpose is achieved.

Description

Utilize the device of semiconductor plant growth lamp institute evolution of heat generating
Technical field
The utility model relates to a kind of device that utilizes the evolution of heat generating of semiconductor plant growth lamp institute, belongs to technical field of power generation.Mainly that the heat that adopts thermal voltaic cell absorption semiconductor plant growth lamp to produce generates electricity.
Background technology
Plant growth lamp can effectively promote the growth of plant, therefore in agricultural production, obtains a wide range of applications.Although compared with traditional plant growth lamp, semiconductor plant growth lamp has advantages of economize on electricity environmental protection, still produces a lot of heats when its work, and the electricity of significant proportion has been become to heat, and part electric energy is wasted.Meanwhile, can raise the again working temperature of semiconductor plant growth lamp of these heats, reduces the luminous efficiency of semiconductor plant growth lamp.
Summary of the invention
The utility model provides a kind of device that utilizes the evolution of heat generating of semiconductor plant growth lamp institute, the heat sending while making full use of plant growth lamp work.
The utility model is to realize with following technical scheme: a kind of device that utilizes the evolution of heat generating of semiconductor plant growth lamp institute, comprise semiconductor plant growth lamp, the Blast Furnace Top Gas Recovery Turbine Unit (TRT) that the thermal voltaic cell composition that polylith is connected is installed on the radiating surface of semiconductor plant growth lamp, Blast Furnace Top Gas Recovery Turbine Unit (TRT) is connected with storage battery by battery connecting line.
The spacing of described thermal voltaic cell and plant growth lamp 1 radiating surface is less than 10 millimeters.
The mode that described thermal voltaic cell 2 adopts parallel connection, series connection or connection in series-parallel to mix connects.
The Blast Furnace Top Gas Recovery Turbine Unit (TRT) that described thermal voltaic cell 2 forms is covered in all or part of surface of semiconductor plant growth lamp radiating surface.
The beneficial effects of the utility model are: the heat that technique scheme adopts thermal voltaic cell absorption plant growth lamp to produce generates electricity, simple in structure, can meet the needs of plant growth, can reach again the object of economize on electricity.
Brief description of the drawings
Accompanying drawing is structural representation of the present utility model.
In figure: 1, semiconductor plant growth lamp, 2, thermal voltaic cell, 3, battery connecting line, 4, storage battery.
Embodiment
Below in conjunction with drawings and Examples, the utility model is further illustrated.
As shown in drawings, adopt semiconductor plant growth lamp 1 as light source, polylith thermal voltaic cell 2 is arranged on the radiating surface of semiconductor plant growth lamp 1.2 modes that adopt parallel connection, series connection or connection in series-parallel to mix of thermal voltaic cell connect by connecting line 3.The heat that semiconductor plant growth lamp 1 produces while work absorbs and converts electricity to through thermal voltaic cell 2, delivers in storage battery 4 and stores through connecting line 3.The spacing of thermal voltaic cell and plant growth lamp 1 radiating surface is less than 10 millimeters.The Blast Furnace Top Gas Recovery Turbine Unit (TRT) that described thermal voltaic cell 2 forms is covered in all or part of surface of semiconductor plant growth lamp radiating surface.

Claims (3)

1. one kind is utilized the device of semiconductor plant growth lamp institute evolution of heat generating, comprise semiconductor plant growth lamp (1), it is characterized in that: the Blast Furnace Top Gas Recovery Turbine Unit (TRT) of thermal voltaic cell (2) composition that polylith is connected is installed on the radiating surface of semiconductor plant growth lamp (1), and Blast Furnace Top Gas Recovery Turbine Unit (TRT) is connected with storage battery (4) by battery connecting line (3); The spacing of described thermal voltaic cell and plant growth lamp (1) radiating surface is less than 10 millimeters.
2. the device that utilizes the evolution of heat generating of semiconductor plant growth lamp institute according to claim 1, is characterized in that: the mode that described thermal voltaic cell (2) adopts parallel connection, series connection or connection in series-parallel to mix connects.
3. the device that utilizes the evolution of heat generating of semiconductor plant growth lamp institute according to claim 1, is characterized in that: the Blast Furnace Top Gas Recovery Turbine Unit (TRT) of described thermal voltaic cell (2) composition is covered in all or part of surface of semiconductor plant growth lamp radiating surface.
CN201320832460.1U 2013-12-16 2013-12-16 Power generation device utilizing heat emitted by semiconductor plant growth lamp Expired - Fee Related CN203690985U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320832460.1U CN203690985U (en) 2013-12-16 2013-12-16 Power generation device utilizing heat emitted by semiconductor plant growth lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320832460.1U CN203690985U (en) 2013-12-16 2013-12-16 Power generation device utilizing heat emitted by semiconductor plant growth lamp

Publications (1)

Publication Number Publication Date
CN203690985U true CN203690985U (en) 2014-07-02

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ID=51012849

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201320832460.1U Expired - Fee Related CN203690985U (en) 2013-12-16 2013-12-16 Power generation device utilizing heat emitted by semiconductor plant growth lamp

Country Status (1)

Country Link
CN (1) CN203690985U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL423090A1 (en) * 2017-10-06 2019-04-08 Energy Solution Innovation Spółka Z Ograniczoną Odpowiedzialnością Thermovoltaic battery of the hybrid power plant

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL423090A1 (en) * 2017-10-06 2019-04-08 Energy Solution Innovation Spółka Z Ograniczoną Odpowiedzialnością Thermovoltaic battery of the hybrid power plant

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140702

Termination date: 20141216

EXPY Termination of patent right or utility model