CN203674550U - Laser and a linear laser - Google Patents
Laser and a linear laser Download PDFInfo
- Publication number
- CN203674550U CN203674550U CN201320879974.2U CN201320879974U CN203674550U CN 203674550 U CN203674550 U CN 203674550U CN 201320879974 U CN201320879974 U CN 201320879974U CN 203674550 U CN203674550 U CN 203674550U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 238000005086 pumping Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000004568 cement Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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Abstract
The utility model relates to a laser and particularly relates to a laser and a linear laser which can obtain a uniform line source of a large fan angle and which can improve the field angle and uniformity of the line source. The laser comprises two semiconductor laser chips arranged side by side at an interval. Light emitted by the two semiconductor laser chips is overlapped to form an elliptic light spot. As two beams of light emitted by two LDs enter a laser crystal and are not overlapped, the power threshold range of the laser crystal is changed, and finally the laser crystal emits one beam of elliptic laser. In addition, distribution of laser energy is changed, and a line source high in power, good in uniformity and large in field angle is obtained after light passes through a refraction system.
Description
Technical field
The utility model relates to a kind of linear laser device, relates in particular to a kind of laser and linear laser device.
Background technology
Laser level is widely used among architectural engineering, and it has had both the function of original spirit level, theodolite line.It is projeced into work directrix on target accurately with laser lines, make work progress more convenient, more save time.Along with the development of technology, the application of laser level is also constantly expanded, and this performance to linear laser device light source itself is also had higher requirement.
Obtaining in the market line source mainly relies on conventional laser acquisition point-source of light to arrange in pairs or groups with cylindrical mirror again.Conventional laser only has a LD chip, and Red and blue light laser application ruddiness LD and blue light LD are as light-emitting component, and its principle is to be directly Laser output by current conversion.Green (light) laser adopts green glow LD or application all solid state laser technology, produces green glow export with the LD of 808nm as pumping source pumping laser crystal.The shortcoming such as use conventional laser and cylindrical mirror to arrange in pairs or groups to obtain that line source ubiquity subtended angle is little, lack of homogeneity, power are low, has limited the application of laser level.
Summary of the invention
For above-mentioned defect, the utility model provides a kind of laser and linear laser device that obtains large fan angle uniform line light source, can realize and improve line source subtended angle and uniformity.
The technical scheme of laser of the present utility model is such: it comprises two semiconductor laser chips that are arranged side by side spacing, the light that two chip semiconductor chip of laser the send formation ellipse light spot that superposes mutually.
Optimally, after semiconductor laser chip light path, coupled lens is set.
Optimally, the laser crystal that sharp pumping source light wavelength is converted to the sharp light wavelength of target is set after coupled lens.
The technical scheme of linear laser device of the present utility model is such: it sets gradually laser, beam-expanding collimation device and cylindrical mirror in light path, laser comprises two semiconductor laser chips that are arranged side by side spacing, the light that two chip semiconductor chip of laser the send formation ellipse light spot that superposes mutually.
Optimally, after semiconductor laser chip light path, coupled lens is set.
Optimally, the laser crystal that sharp pumping source light wavelength is converted to the sharp light wavelength of target is set after coupled lens.
Optimally, line source transducer is set to cylindrical mirror, wave mirror or Bao Weier prism.
Laser crystal is the crystal that sharp pumping source light wavelength is converted to the sharp light wavelength of target.
Technical solution of the present invention, comprise and designed a kind of new laser and traditional dioptric system, its special character is that laser comprises two LD chips, has certain spacing between two LD, the light that two LD send superposes mutually, and laser sends ellipse light spot.
For ruddiness LD, blue light LD and green glow LD, increase the stability that a slice LD can improve the power of laser and ensure bright dipping, and while forming line source by dioptric system, can think the stack of two line sources at diverse location, improve the brightness of line and subtended angle and improved the uniformity of line.
For application all solid state laser technology, produce the laser of green glow output as pumping source pumping laser crystal with 808nmLD, two light that LD sends due to what enter laser crystal, and this two-beam not exclusively overlaps, this makes to meet the area change of laser crystal power threshold, and final is a branch of elliptical laser by laser crystal outgoing; And change the distribution of laser energy,, good uniformity high at the power obtaining, the line source that subtended angle is large after dioptric system.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment 1 of the present utility model;
Fig. 2 is the structural representation of embodiment 2 of the present utility model.
1, semiconductor laser chip one, 2-semiconductor laser chip two, 3-coupled lens, 4-optical cement crystal, 5-beam-expanding collimation device, 6-line source transducer.
Embodiment
Embodiment 1:
As shown in Figure 1, the linear laser device of the present embodiment comprises two semiconductor laser chips that are arranged side by side spacing, the light that two chip semiconductor chip of laser the send formation ellipse light spot that superposes mutually.After semiconductor laser chip light path, coupled lens is set.Optical cement crystal is set after coupled lens.
The linear laser device of the present embodiment, comprise 1, wavelength is 808nm semiconductor laser chip one, 2, wavelength is 808nm semiconductor laser chip two, 3 coupled lens, 4, optical cement crystal, 5, beam-expanding collimation system, 6, cylindrical mirror, wherein 1, the spacing between semiconductor laser chip one and 2, semiconductor laser chip two is set to spacing 0.1mm, 1 and 2 two-beams that send focus on outgoing 532nm ellipse light spot in 4 optical cement crystal by 3 coupling mirrors, produce large angle, uniform line source by 5 beam-expanding systems and 6 cylindrical mirrors.
Embodiment 2:
The difference of the present embodiment and embodiment 1 is, the laser of the present embodiment does not arrange coupled lens and optical cement crystal, it sets gradually two semiconductor laser chips that are arranged side by side spacing in light path, the light that two chip semiconductor chip of laser the send formation ellipse light spot that superposes mutually.After semiconductor laser chip light path, colimated light system is set.
Specifically referring to Fig. 2, the invention provides a kind of method that obtains large fan angle uniform line light source, the semiconductor laser chip one that comprise 1, wavelength is 650nm, 2, the semiconductor laser chip two that wavelength is 650nm, 5, beam-expanding collimation system, 6, cylindrical mirror, wherein 1, the spacing between semiconductor laser chip one and 2, semiconductor laser chip two is set to 0.5mm, 1 and 2 two-beams that the send outgoing 650nm ellipse light spot that superposes mutually, produces large angle, line source uniformly by 5 beam-expanding collimation systems and 6 cylindrical mirrors.
It should be noted that, above-described embodiment just illustrates two preferred embodiments of the present utility model, it not the restriction to the utility model protection range, as long as based on scheme described in the utility model, to the equivalents that described in above-described embodiment, concrete technical characterictic does, all in the scope of the utility model protection; As long as the scheme that the technical staff in described field can directly, beyond all doubtly determine from scheme described in the utility model, also in the scope of the utility model protection.
Claims (7)
1. a laser, is characterized in that: it comprises two semiconductor laser chips that are arranged side by side spacing, the light that two chip semiconductor chip of laser the send formation ellipse light spot that superposes mutually.
2. laser according to claim 1, is characterized in that: after semiconductor laser chip light path, coupled lens is set.
3. laser according to claim 2, is characterized in that: the laser crystal that sharp pumping source light wavelength is converted to the sharp light wavelength of target is set after coupled lens.
4. a linear laser device, it sets gradually laser, beam-expanding collimation device and line source transducer in light path, it is characterized in that: laser comprises two semiconductor laser chips that are arranged side by side spacing the light that two chip semiconductor chip of laser the send formation ellipse light spot that superposes mutually.
5. linear laser device according to claim 4, is characterized in that: after semiconductor laser chip light path, coupled lens is set.
6. linear laser device according to claim 5, is characterized in that: the laser crystal that sharp pumping source light wavelength is converted to the sharp light wavelength of target is set after coupled lens.
7. linear laser device according to claim 4, is characterized in that: line source transducer is set to cylindrical mirror, wave mirror or Bao Weier prism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320879974.2U CN203674550U (en) | 2013-12-30 | 2013-12-30 | Laser and a linear laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320879974.2U CN203674550U (en) | 2013-12-30 | 2013-12-30 | Laser and a linear laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203674550U true CN203674550U (en) | 2014-06-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320879974.2U Expired - Lifetime CN203674550U (en) | 2013-12-30 | 2013-12-30 | Laser and a linear laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203674550U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103701026A (en) * | 2013-12-30 | 2014-04-02 | 青岛镭创光电技术有限公司 | Laser and linear laser |
| CN104849252A (en) * | 2015-05-11 | 2015-08-19 | 华中科技大学 | Three-color fluorescent microscopic imaging system |
| CN110045505A (en) * | 2019-03-28 | 2019-07-23 | 哈尔滨市科佳通用机电股份有限公司 | A kind of method and system of splicing thread laser light source intensity |
| CN110514171A (en) * | 2019-08-16 | 2019-11-29 | 西安交通大学 | A kind of emitting head of the biparting automatic theodolite of shape rotary laser |
| CN111900608A (en) * | 2020-07-30 | 2020-11-06 | 青岛镭创光电技术有限公司 | Small-fan-angle laser line light source module |
-
2013
- 2013-12-30 CN CN201320879974.2U patent/CN203674550U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103701026A (en) * | 2013-12-30 | 2014-04-02 | 青岛镭创光电技术有限公司 | Laser and linear laser |
| CN104849252A (en) * | 2015-05-11 | 2015-08-19 | 华中科技大学 | Three-color fluorescent microscopic imaging system |
| CN104849252B (en) * | 2015-05-11 | 2017-11-10 | 华中科技大学 | A kind of three fluorescence micro imaging system |
| CN110045505A (en) * | 2019-03-28 | 2019-07-23 | 哈尔滨市科佳通用机电股份有限公司 | A kind of method and system of splicing thread laser light source intensity |
| CN110514171A (en) * | 2019-08-16 | 2019-11-29 | 西安交通大学 | A kind of emitting head of the biparting automatic theodolite of shape rotary laser |
| CN110514171B (en) * | 2019-08-16 | 2020-06-19 | 西安交通大学 | Transmitting head of double-sector rotary laser automatic theodolite |
| CN111900608A (en) * | 2020-07-30 | 2020-11-06 | 青岛镭创光电技术有限公司 | Small-fan-angle laser line light source module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Laser and linear laser Effective date of registration: 20160918 Granted publication date: 20140625 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO LASENCE Co.,Ltd. Registration number: 2016990000789 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170821 Granted publication date: 20140625 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO LASENCE Co.,Ltd. Registration number: 2016990000789 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Laser and linear laser Effective date of registration: 20170928 Granted publication date: 20140625 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO LASENCE Co.,Ltd. Registration number: 2017370010063 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180816 Granted publication date: 20140625 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO LASENCE Co.,Ltd. Registration number: 2017370010063 |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140625 |