CN203660032U - Coplanar waveguide microstrip converter - Google Patents
Coplanar waveguide microstrip converter Download PDFInfo
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- CN203660032U CN203660032U CN201320717399.6U CN201320717399U CN203660032U CN 203660032 U CN203660032 U CN 203660032U CN 201320717399 U CN201320717399 U CN 201320717399U CN 203660032 U CN203660032 U CN 203660032U
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- planar waveguide
- conduction band
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- microstrip line
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Abstract
The utility model provides a coplanar waveguide microstrip converter, which comprises a rectangular dielectric substrate, a coplanar waveguide central conduction band, a microstrip line transition section, a microstrip line and coplanar waveguide grounding layers, wherein the back surface of the rectangular dielectric substrate is provided with a grounding metal layer; the coplanar waveguide central conduction band, the microstrip line transition section and the microstrip line are sequentially connected from one end to another end of the front surface of the dielectric substrate; the coplanar waveguide grounding layers are symmetrically arranged on two sides of the coplanar waveguide central conduction band; and each coplanar waveguide grounding layer is composed of a right-angle trapezoidal part and a rectangular part which are integrally formed, the lower bottom of each right-angle trapezoidal part is completely overlapped with one long side of each rectangular part, the length of the lower bottom of each right-angle trapezoidal parts equals to the sum of lengths of the coplanar waveguide central conduction band and the microstrip line transition section, the upper bottom of each right-angle trapezoidal part is parallel and adjacent to the coplanar waveguide central conduction band, and the length of the upper bottom of each right-angle trapezoidal part equals to the length of the coplanar waveguide central conduction band. The coplanar waveguide microstrip converter is simple in structure, small in size, easy to manufacture, and low in loss.
Description
Technical field
The utility model relates to microwave, millimetre-wave circuit technical field, relates in particular to a kind of co-planar waveguide microstrip transitions device.
Background technology
Generally, MMIC(millimeter wave monolithic integrated circuit) chip by elargol burn-back in cavity, by spun gold bind to microstrip line.If adopt single line bind, gold thread can bring very large stray inductance, although can adopt the means such as modeling to consider in advance this stray inductance in the time of chip design, but be difficult to eliminate, can produce larger difference because different bonging machines and different people operate.And if adopt when three line binds, the radian of earth-current and signal code process in air is very close, comparing this connection of lumped inductance similarly is more uniform transmission line.Therefore,, in MMIC design, preferably adopting co-planar waveguide CPW(Coplanar Waveguide) structure is as interface.
Co-planar waveguide is as a kind of superior performance, microwave planar transmission line easy to process, in MMIC circuit, just play a greater and greater role, especially in millimeter wave frequency band application, co-planar waveguide more has the incomparable performance advantage of microstrip line: compared with conventional microstrip transmission line, co-planar waveguide has lower dispersion, less size for connection, less parasitic parameter, easily realize passive, the series and parallel connections of active device in microwave circuit, easily improve current densities etc.But in practical application, often need between microstrip line and coplanar waveguide transmission line, change, such as, if the output interface of co-planar waveguide probe is co-planar waveguide line, and the interface of mmic chip is microstrip line, both linkings must need change-over circuit.
Utility model content
For the problem of above-mentioned prior art, the purpose of this utility model is to provide a kind of simple in structure, co-planar waveguide microstrip transitions device that loss is low, to realize being connected between co-planar waveguide and microstrip line.
To achieve these goals, the utility model adopts following technical scheme:
A kind of co-planar waveguide microstrip transitions device, it comprises:
The dielectric substrate of one rectangle, its reverse side is provided with ground metal layer;
Ground roll guiding center conduction band, a microstrip line changeover portion and the microstrip line altogether that connect successively to the other end from one end from the front of described dielectric substrate; And
Be arranged on symmetrically the co-planar waveguide ground plane of conduction band both sides, described co-planar waveguide center;
Wherein, described co-planar waveguide ground plane is made up of an one-body molded right angle trapezoidal portions and a rectangle part together, and described right-angled trapezium part go to the bottom that and a long limit of described rectangle part overlaps completely and its length equals the length sum of described co-planar waveguide center conduction band and described microstrip line changeover portion, the upper base of described right-angled trapezium part is parallel and be adjacent to described co-planar waveguide center conduction band equal in length with described co-planar waveguide center conduction band;
Wherein, the length of described microstrip line changeover portion is 0.4 ± 0.005mm, and the height of described right-angled trapezium part is 0.55 ± 0.005mm, and the width of described co-planar waveguide center conduction band is 0.5 ± 0.005mm.
Further, the gap between described co-planar waveguide center conduction band and described co-planar waveguide ground plane is 0.1 ± 0.005mm.
Further, described co-planar waveguide ground plane is connected with described ground metal layer by some via holes.
Preferably, the diameter of described via hole is 0.3 ± 0.005mm.
In sum, co-planar waveguide microstrip transitions device of the present utility model has been realized the conversion between co-planar waveguide and microstrip line,, the accurate TEM ripple of microstrip line can be transformed into the TE ripple of co-planar waveguide center conduction band, and it is simple in structure, size is little, be easy to making, by the optimal design to critical size, also can reduce its loss.
Accompanying drawing explanation
Fig. 1 is the structural representation of co-planar waveguide microstrip transitions device of the present utility model;
Fig. 2 be the S11 of the co-planar waveguide microstrip transitions device of Fig. 1 while being applied to Ka wave band with the length variations of microstrip line changeover portion emulation testing figure;
Fig. 3 be the S11 of the co-planar waveguide microstrip transitions device of Fig. 1 while being applied to Ka wave band with the High variation of right-angled trapezium part emulation testing figure;
Fig. 4 is the emulation testing figure of the S11 of the co-planar waveguide microstrip transitions device of Fig. 1 while being applied to Ka wave band with the change width of co-planar waveguide center conduction band;
Fig. 5 be the S11 of the co-planar waveguide microstrip transitions device of Fig. 1 while being applied to Ka wave band with co-planar waveguide center conduction band together ground roll connect the emulation testing figure that the gap between stratum changes;
Fig. 6 is the emulation testing figure of S11, S12 while being applied to Ka wave band according to a preferred embodiment of the present utility model;
Fig. 7 is the structural representation for the microstrip transitions of the co-planar waveguide back-to-back device tested of the present utility model;
Fig. 8 is the emulation testing figure of S11, the S12 of the microstrip transitions of the co-planar waveguide back-to-back device of Fig. 7 while being applied to Ka wave band;
Fig. 9 is the actual resolution chart of S11, the S12 of the microstrip transitions of the co-planar waveguide back-to-back device of Fig. 7 while being applied to Ka wave band;
Figure 10 is the comparison diagram of the S12 in Fig. 8 and Fig. 9;
Figure 11 is the comparison diagram of the S11 in Fig. 8 and Fig. 9.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, further describe below in conjunction with specific embodiment and with reference to accompanying drawing.
As shown in Figure 1, co-planar waveguide microstrip transitions device of the present utility model comprises the dielectric substrate 1 of a rectangle, the one side of this dielectric substrate 1 is equipped with ground metal layer (not shown), another side is provided with the microstrip line 2 extending in opposite directions from its opposite end respectively and has ground roll guiding center conduction band 3 altogether, and connect by microstrip line changeover portion 4 between this microstrip line 2 and co-planar waveguide center conduction band 3, wherein, be respectively equipped with in the both sides of co-planar waveguide center conduction band 3 along the symmetrically arranged co-planar waveguide ground plane 5 of co-planar waveguide center conduction band 3, this co-planar waveguide ground plane 5 is connected with ground metal layer by some via holes 6, to increase ground connection performance, and this co-planar waveguide ground plane 5 and ground metal layer form by copper.
In the present embodiment, co-planar waveguide ground plane 5 is made up of an one-body molded right angle trapezoidal portions and a rectangle part together, and right-angled trapezium part go to the bottom that and a long limit of rectangle part overlaps completely and its length equals the length sum of co-planar waveguide center conduction band 3 and microstrip line changeover portion 4, and the upper base of right-angled trapezium part is parallel and be adjacent to co-planar waveguide center conduction band 3 ground roll guiding center conduction band 3 equal in length together.
And find in design of Simulation process, the length a of microstrip line changeover portion 4 and co-planar waveguide coupling inclination angle (being inclination angle theta) are very large to the performance impact of transducer, in actual optimization process, can be decomposed into the optimization of the high b length of length a to microstrip line changeover portion 4 and right-angled trapezium part to the optimization of inclination angle theta.Like this, in design, need the optimization parameter of adjusting to have 3, be respectively: the width c of the length a of microstrip line changeover portion 4, the high b of right-angled trapezium part and co-planar waveguide center conduction band 3.
Emulation testing curve chart shown in Fig. 2-4 shows respectively the impact of above-mentioned three parameter a, b and the co-planar waveguide microstrip transitions device of c on the present embodiment.When modeling, the co-planar waveguide center conduction band 3 gap gap that ground roll connects between stratum 5 is together 0.1mm, via hole 6 diameters are 0.3mm, the sheet material that dielectric substrate 1 adopts is Rogers5880, its dielectric constant is 0.22mm, thickness 0.254mm, and the thickness of co-planar waveguide ground plane 5 is 18um, microstrip line 2 is selected 50 ohm microstrip 2, and its width is 0.78mm.
In simulation process as shown in Figure 2, the high b of right-angled trapezium part is set to 0.55mm, and the width c of co-planar waveguide center conduction band 3 is set to 0.5mm.As seen from the figure, S11(reflection coefficient within the scope of 0.5GHz～30GHz) change not quite, but within the scope of 30GHz～40GHz, the length a of microstrip line changeover portion 4 is longer, better to the suppression performance of S11, however also stronger at the resonance of 40.5GHz left and right.
In simulation process as shown in Figure 3, the length a that sets microstrip line changeover portion 4 is 0.4mm, and the width c of co-planar waveguide center conduction band 3 is 0.41mm, in the time that the high b of right-angled trapezium part changes, approximately has the fluctuation of 1dB in whole frequency band, affects inviolent.
In simulation process as shown in Figure 4, the length a that sets microstrip line changeover portion 4 is 0.4mm, and the width c of co-planar waveguide center conduction band 3 is 0.55mm, and as seen from the figure, holding wire is wider, and performance is better.In fact, if co-planar waveguide center conduction band 3 together ground roll to connect the safe distance of the gap gap between stratum 5 less than 0.1mm, in 10GHz～30GHz band, can have improvement greatly, as mistake! Do not find Reference source., along with reducing of gap gap, obviously improve at the following band transmissions coefficient of 40GHz.Certainly,, due to the restriction of domestic manufacturer's mask-making technology, the value minimum of gap gap can only be 0.1mm.
By above-mentioned analysis, a preferred embodiment of the present utility model provides each critical size of optimizing, wherein, each scale error scope is ± 0.005mm, each size of optimizing is as follows: the length of microstrip line changeover portion 4 is 0.4mm, and the height of right-angled trapezium part is 0.55mm, and the width of co-planar waveguide center conduction band 3 is 0.5mm, co-planar waveguide center conduction band 3 gap that ground roll connects between stratum 5 is together 0.1mm, and the diameter of via hole 6 is 0.3 ± 0.005mm.
The simulation results after optimization as shown in Figure 6, S12(transmission coefficient) in whole frequency band, be all less than 0.1dB, S11 is all below 18dB.
For the ease of test, a pair of co-planar waveguide microstrip transitions device is docked back-to-back, form structure as shown in Figure 7, this back-to-back the total length of co-planar waveguide microstrip transitions device be 20.4mm, width is 12.76mm.While carrying out actual test, testing jig adopts a pair of 2.4mm joint of the SouthWest microwave End Launch of company series.
For the above-mentioned microstrip transitions of co-planar waveguide back-to-back device, carry out the result of emulation testing as shown in Figure 8, carry out the result of actual test as shown in Figure 9, can find out from Fig. 8 and 9, the transducer loss of the present embodiment is low, bandwidth.
Simultaneously, in Figure 10 and 11, respectively the simulation results of S12 and S11 and actual test result are contrasted, known according to Fig. 8-11, the emulation of S11 is consistent with measured value, the emulation of S12 is consistent with measured value trend, but on loss value, there is larger difference, this is because only medium substrate has been set to dielectric constant in the time of emulation, its ground metal layer has been regarded perfact conductor as, and, in actual test process, the impact of above-mentioned 2.4mm joint is not deducted, and in fact they also have certain influence to the test result of insertion loss and standing wave.
Above-described, be only preferred embodiment of the present utility model, not in order to limit scope of the present utility model, above-described embodiment of the present utility model can also make a variety of changes.Be that simple, the equivalence that every claims according to the utility model application and description are done changes and modify, all fall into the claim protection range of the utility model patent.
Claims (4)
1. a co-planar waveguide microstrip transitions device, is characterized in that, this transducer comprises:
The dielectric substrate of one rectangle, its reverse side is provided with ground metal layer;
Ground roll guiding center conduction band, a microstrip line changeover portion and the microstrip line altogether that connect successively to the other end from one end from the front of described dielectric substrate; And
Be arranged on symmetrically the co-planar waveguide ground plane of conduction band both sides, described co-planar waveguide center;
Wherein, described co-planar waveguide ground plane is made up of an one-body molded right angle trapezoidal portions and a rectangle part together, and described right-angled trapezium part go to the bottom that and a long limit of described rectangle part overlaps completely and its length equals the length sum of described co-planar waveguide center conduction band and described microstrip line changeover portion, the upper base of described right-angled trapezium part is parallel and be adjacent to described co-planar waveguide center conduction band equal in length with described co-planar waveguide center conduction band;
Wherein, the length of described microstrip line changeover portion is 0.4 ± 0.005mm, and the height of described right-angled trapezium part is 0.55 ± 0.005mm, and the width of described co-planar waveguide center conduction band is 0.5 ± 0.005mm.
2. co-planar waveguide microstrip transitions device according to claim 1, is characterized in that, the gap between described co-planar waveguide center conduction band and described co-planar waveguide ground plane is 0.1 ± 0.005mm.
3. co-planar waveguide microstrip transitions device according to claim 1 and 2, is characterized in that, described co-planar waveguide ground plane is connected with described ground metal layer by some via holes.
4. co-planar waveguide microstrip transitions device according to claim 3, is characterized in that, the diameter of described via hole is 0.3 ± 0.005mm.
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| CN201320717399.6U CN203660032U (en) | 2013-11-14 | 2013-11-14 | Coplanar waveguide microstrip converter |
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| CN201320717399.6U CN203660032U (en) | 2013-11-14 | 2013-11-14 | Coplanar waveguide microstrip converter |
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| CN104837292A (en) * | 2015-04-27 | 2015-08-12 | 华东师范大学 | Planar small-power microwave micro plasma linear array source |
| CN105895627A (en) * | 2016-05-04 | 2016-08-24 | 西安电子科技大学 | Broadband coplanar waveguide micro-strip bi-node transition structure without through hole |
| CN105975687A (en) * | 2016-05-04 | 2016-09-28 | 西安电子科技大学 | Method for constructing lumped model of band-pass coplanar waveguide micro-strip through hole-free transition structure |
| CN106654492A (en) * | 2016-12-23 | 2017-05-10 | 武汉邮电科学研究院 | Transition transmission line and method between coplanar waveguide transmission line and microstrip transmission line |
| CN109390649A (en) * | 2018-10-25 | 2019-02-26 | 深圳市信维通信股份有限公司 | A kind of microwave transmission line |
| CN109655970A (en) * | 2019-01-30 | 2019-04-19 | 电子科技大学 | A kind of integrated transition structure of Terahertz on piece |
| CN109786985A (en) * | 2018-12-12 | 2019-05-21 | 南京安捷智造科技有限公司 | A kind of Rectangular Microstrip Standing-wave Antennas antenna based on coplanar waveguide ground |
| CN111244615A (en) * | 2020-03-11 | 2020-06-05 | 电子科技大学 | Terahertz is integrated dipole antenna transition structure on piece now |
| CN111769348A (en) * | 2020-06-12 | 2020-10-13 | 中国船舶重工集团公司第七二四研究所 | Transition structure of asymmetric strip line and microstrip line |
| CN112563708A (en) * | 2021-02-22 | 2021-03-26 | 成都天锐星通科技有限公司 | Transmission line conversion structure and antenna standing wave test system |
| CN113203351A (en) * | 2021-04-28 | 2021-08-03 | 电子科技大学 | Planar transmission line structure for improving ferromagnetic resonance line width test precision |
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| CN114583427A (en) * | 2022-03-11 | 2022-06-03 | 赛恩领动(上海)智能科技有限公司 | High-frequency signal transmission device and antenna system |
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- 2013-11-14 CN CN201320717399.6U patent/CN203660032U/en not_active Expired - Fee Related
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| CN104837292A (en) * | 2015-04-27 | 2015-08-12 | 华东师范大学 | Planar small-power microwave micro plasma linear array source |
| CN105895627A (en) * | 2016-05-04 | 2016-08-24 | 西安电子科技大学 | Broadband coplanar waveguide micro-strip bi-node transition structure without through hole |
| CN105975687A (en) * | 2016-05-04 | 2016-09-28 | 西安电子科技大学 | Method for constructing lumped model of band-pass coplanar waveguide micro-strip through hole-free transition structure |
| CN105975687B (en) * | 2016-05-04 | 2019-03-01 | 西安电子科技大学 | Lumped model construction method of the band logical co-planar waveguide micro-strip without through-hole transition structure |
| CN105895627B (en) * | 2016-05-04 | 2019-03-26 | 西安电子科技大学 | A kind of broadband co-planar waveguide micro-strip binodal is without through-hole transition structure |
| CN106654492A (en) * | 2016-12-23 | 2017-05-10 | 武汉邮电科学研究院 | Transition transmission line and method between coplanar waveguide transmission line and microstrip transmission line |
| CN106654492B (en) * | 2016-12-23 | 2019-01-22 | 武汉邮电科学研究院 | Transition transmission line and method of the coplanar waveguide transmission line to microstrip transmission line |
| CN109390649A (en) * | 2018-10-25 | 2019-02-26 | 深圳市信维通信股份有限公司 | A kind of microwave transmission line |
| CN109390649B (en) * | 2018-10-25 | 2023-10-17 | 深圳市信维通信股份有限公司 | Microwave transmission line |
| CN109786985A (en) * | 2018-12-12 | 2019-05-21 | 南京安捷智造科技有限公司 | A kind of Rectangular Microstrip Standing-wave Antennas antenna based on coplanar waveguide ground |
| CN109655970A (en) * | 2019-01-30 | 2019-04-19 | 电子科技大学 | A kind of integrated transition structure of Terahertz on piece |
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| CN111769348A (en) * | 2020-06-12 | 2020-10-13 | 中国船舶重工集团公司第七二四研究所 | Transition structure of asymmetric strip line and microstrip line |
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| CN113594658B (en) * | 2021-08-11 | 2022-04-08 | 上海交通大学 | Broadband transition structure from grounding coplanar waveguide to suspended microstrip line |
| CN113555656B (en) * | 2021-08-18 | 2022-03-15 | 上海交通大学 | Broadband transition structure of grounding coplanar waveguide and strip line containing curve grounding electrode |
| CN113555656A (en) * | 2021-08-18 | 2021-10-26 | 上海交通大学 | Broadband transition structure of grounded coplanar waveguide and strip line with curved grounding electrode |
| CN113871831A (en) * | 2021-09-24 | 2021-12-31 | 北京理工大学 | Millimeter wave and terahertz monolithic circuit packaging transition structure and implementation method thereof |
| CN114221108A (en) * | 2021-12-21 | 2022-03-22 | 北京晟德微集成电路科技有限公司 | Transmission device |
| CN114583427A (en) * | 2022-03-11 | 2022-06-03 | 赛恩领动(上海)智能科技有限公司 | High-frequency signal transmission device and antenna system |
| CN114583427B (en) * | 2022-03-11 | 2024-04-26 | 赛恩领动(上海)智能科技有限公司 | High-frequency signal transmission device and antenna system |
| CN114784467B (en) * | 2022-05-10 | 2022-12-06 | 赛恩领动(上海)智能科技有限公司 | Signal cross-layer transmission device and antenna system |
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| CN114824713A (en) * | 2022-07-01 | 2022-07-29 | 南京隼眼电子科技有限公司 | Adapter and antenna module |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140618 Termination date: 20191114 |