CN203537329U - Monitoring power amplifier circuit with high conversion rate - Google Patents
Monitoring power amplifier circuit with high conversion rate Download PDFInfo
- Publication number
- CN203537329U CN203537329U CN201320723463.1U CN201320723463U CN203537329U CN 203537329 U CN203537329 U CN 203537329U CN 201320723463 U CN201320723463 U CN 201320723463U CN 203537329 U CN203537329 U CN 203537329U
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- Prior art keywords
- triode
- resistance
- effect transistor
- power amplifier
- field effect
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 13
- 230000005669 field effect Effects 0.000 claims abstract description 30
- 239000003990 capacitor Substances 0.000 abstract description 8
- 230000003321 amplification Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Abstract
The utility model discloses a monitoring power amplifier circuit with a high conversion rate. The monitoring power amplifier circuit comprises a first resistor to a tenth resistor, a potentiometer, a first capacitor, a second capacitor, a first field-effect transistor, a second field-effect transistor, a first triode, a second triode, a third triode and a fourth triode, wherein the first field-effect transistor and the second field-effect transistor are connected in parallel to constitute a push-pull amplification type circuit; the first triode and the second triode constitute a current translation circuit; and the third triode and the fourth triode constitute a voltage conversion circuit. The monitoring power amplifier circuit with the high conversion rate is simpler in structure, can easily obtain the conversion rate of hundreds of volts every second, and has a good drive capability for capacitive load and strong competitiveness in the market.
Description
Technical field
The utility model relates to a kind of monitoring power amplifier, relates in particular to a kind of monitoring power amplifier of high conversion rate.
Background technology
In some important places, need to monitor it, monitoring power amplifier is exactly conventional apparatus.Traditional monitoring power amplifier often adopts Voltage Feedback mode, adopts the circuit of this class mode to be difficult for obtaining very high switching rate, and low transient intermodulation is also larger, and the tonequality of output has noise and sonic boom.
Utility model content
The purpose of this utility model is just to provide in order to address the above problem a kind of monitoring power amplifier of high conversion rate.
The utility model is achieved through the following technical solutions above-mentioned purpose:
The monitoring power amplifier of the utility model high conversion rate, comprise the first resistance to the ten resistance, potentiometer, the first electric capacity, the second electric capacity, the first field effect transistor, the second field effect transistor, the first triode, the second triode, the 3rd triode and the 4th triode, the first end of described potentiometer is as the signal input part of described power amplifier, the second end of described potentiometer is connected rear and ground connection with the first end of described the 7th resistance, the sliding end of described potentiometer respectively with the first end of described the second resistance and the first end of described the 3rd resistance, the second end of described the second resistance is connected with the base stage of described the first triode, the emitter of described the first triode is connected with the base stage of described the 3rd triode with the first end of described the 4th resistance respectively, the second end of described the 4th resistance respectively with the collector electrode of described the second triode, the first end of described the 5th resistance, the first end of the source electrode of described the first field effect transistor and described the first electric capacity is connected and as the positive source input of described power amplifier, the second end ground connection of described the first electric capacity, the second end of described the 5th resistance is connected with the collector electrode of described the 3rd triode with the first end of described the 6th resistance respectively, the second end of described the 6th resistance is connected with the grid of described the first field effect transistor respectively, the emitter of described the 3rd triode respectively with the emitter of described the 4th triode, the second end of described the 7th resistance is connected with the first end of described the first resistance, the second end of described the 3rd resistance is connected with the base stage of described the second triode, the emitter of described the second triode is connected with the first end of described the 8th resistance with the base stage of described the 4th triode respectively, the second end of described the 8th resistance respectively with the collector electrode of described the first triode, the first end of described the 9th resistance, the first end of the source electrode of described the second field effect transistor and described the second electric capacity is connected and as the power cathode input of described power amplifier, the second end ground connection of described the second electric capacity, the collector electrode of described the 4th triode is connected with the first end of described the tenth resistance with the second end of described the 9th resistance respectively, the second end of described the tenth resistance is connected with the grid of described the second field effect transistor, the drain electrode of described the second field effect transistor is respectively with the drain electrode of described the first field effect transistor with the second end of described the first resistance is connected and as the signal output part of described power amplifier.
The beneficial effects of the utility model are:
The monitoring power amplifier of the utility model high conversion rate, relatively simple for structure, can obtain easily the switching rate of the hundreds of volts of every microsecond, good to the driving force of capacitive load, in market, possess competitiveness.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the monitoring power amplifier of the utility model high conversion rate.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail:
As shown in Figure 1, the monitoring power amplifier of the utility model high conversion rate, comprise that the first resistance R 1 is to the tenth resistance R 10, potentiometer RP, the first capacitor C 1, the second capacitor C 2, the first field effect transistor FET1, the second field effect transistor FET2, the first triode VT1, the second triode VT2, the 3rd triode VT3 and the 4th triode VT4, the first end of potentiometer RP is as the signal input part of power amplifier, the second end of potentiometer RP is connected rear and ground connection with the first end of the 7th resistance R 7, the sliding end of potentiometer RP respectively with the first end of the second resistance R 2 and the first end of the 3rd resistance R 3, the second end of the second resistance R 2 is connected with the base stage of the first triode VT1, the emitter of the first triode VT1 is connected with the base stage of the 3rd triode VT3 with the first end of the 4th resistance R 4 respectively, the second end of the 4th resistance R 4 respectively with the collector electrode of the second triode VT2, the first end of the 5th resistance R 5, the first end of the source electrode of the first field effect transistor FET1 and the first capacitor C 1 is connected and as the positive source input of power amplifier, the second end ground connection of the first capacitor C 1, the second end of the 5th resistance R 5 is connected with the collector electrode of the 3rd triode VT3 with the first end of the 6th resistance R 6 respectively, the second end of the 6th resistance R 6 is connected with the grid of the first field effect transistor FET1 respectively, the emitter of the 3rd triode VT3 respectively with the emitter of the 4th triode VT4, the second end of the 7th resistance R 7 is connected with the first end of the first resistance R 1, the second end of the 3rd resistance R 3 is connected with the base stage of the second triode VT2, the emitter of the second triode VT2 is connected with the first end of the 8th resistance R 8 with the base stage of the 4th triode VT4 respectively, the second end of the 8th resistance R 8 respectively with the collector electrode of the first triode VT1, the first end of the 9th resistance R 9, the first end of the source electrode of the second field effect transistor FET2 and the second capacitor C 2 is connected and as the power cathode input of power amplifier, the second end ground connection of the second capacitor C 2, the collector electrode of the 4th triode VT4 is connected with the first end of the tenth resistance R 10 with the second end of the 9th resistance R 9 respectively, the second end of the tenth resistance R 10 is connected with the grid of the second field effect transistor FET2, the drain electrode of the second field effect transistor FET2 is respectively with the drain electrode of the first field effect transistor FET1 with the second end of the first resistance R 1 is connected and as the signal output part of power amplifier.Applied signal voltage converts electric current to through the first triode VT1 and the second triode VT2, by the 3rd triode VT3 and the 4th triode VT4, convert voltage to again, then through the first field effect transistor FET1 and the second field effect transistor FET2, further amplify output driving load.
Claims (1)
1. the monitoring power amplifier of a high conversion rate, it is characterized in that: comprise the first resistance to the ten resistance, potentiometer, the first electric capacity, the second electric capacity, the first field effect transistor, the second field effect transistor, the first triode, the second triode, the 3rd triode and the 4th triode, the first end of described potentiometer is as the signal input part of described power amplifier, the second end of described potentiometer is connected rear and ground connection with the first end of described the 7th resistance, the sliding end of described potentiometer respectively with the first end of described the second resistance and the first end of described the 3rd resistance, the second end of described the second resistance is connected with the base stage of described the first triode, the emitter of described the first triode is connected with the base stage of described the 3rd triode with the first end of described the 4th resistance respectively, the second end of described the 4th resistance respectively with the collector electrode of described the second triode, the first end of described the 5th resistance, the first end of the source electrode of described the first field effect transistor and described the first electric capacity is connected and as the positive source input of described power amplifier, the second end ground connection of described the first electric capacity, the second end of described the 5th resistance is connected with the collector electrode of described the 3rd triode with the first end of described the 6th resistance respectively, the second end of described the 6th resistance is connected with the grid of described the first field effect transistor respectively, the emitter of described the 3rd triode respectively with the emitter of described the 4th triode, the second end of described the 7th resistance is connected with the first end of described the first resistance, the second end of described the 3rd resistance is connected with the base stage of described the second triode, the emitter of described the second triode is connected with the first end of described the 8th resistance with the base stage of described the 4th triode respectively, the second end of described the 8th resistance respectively with the collector electrode of described the first triode, the first end of described the 9th resistance, the first end of the source electrode of described the second field effect transistor and described the second electric capacity is connected and as the power cathode input of described power amplifier, the second end ground connection of described the second electric capacity, the collector electrode of described the 4th triode is connected with the first end of described the tenth resistance with the second end of described the 9th resistance respectively, the second end of described the tenth resistance is connected with the grid of described the second field effect transistor, the drain electrode of described the second field effect transistor is respectively with the drain electrode of described the first field effect transistor with the second end of described the first resistance is connected and as the signal output part of described power amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320723463.1U CN203537329U (en) | 2013-11-15 | 2013-11-15 | Monitoring power amplifier circuit with high conversion rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320723463.1U CN203537329U (en) | 2013-11-15 | 2013-11-15 | Monitoring power amplifier circuit with high conversion rate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203537329U true CN203537329U (en) | 2014-04-09 |
Family
ID=50423500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320723463.1U Expired - Lifetime CN203537329U (en) | 2013-11-15 | 2013-11-15 | Monitoring power amplifier circuit with high conversion rate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203537329U (en) |
-
2013
- 2013-11-15 CN CN201320723463.1U patent/CN203537329U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: WEI QIANG Free format text: FORMER OWNER: SICHUAN GUANXIANG ELECTRONIC TECHNOLOGY CO., LTD. Effective date: 20150716 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| C56 | Change in the name or address of the patentee |
Owner name: SICHUAN GUANXIANG ELECTRONIC TECHNOLOGY CO., LTD. Free format text: FORMER NAME: SICHUAN DISCOVERY DREAM ELECTRONICS SCIENCE + TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 610000, No. 399, west section of Chang Xiong Road, Chengdu hi tech Zone, Sichuan Patentee after: Sichuan visualisation electronic Polytron Technologies Inc. Address before: 610000, No. 399, west section of Chang Xiong Road, Chengdu hi tech Zone, Sichuan Patentee before: SICHUAN DISCOVERY DREAM ELECTRONICS SCIENCE & TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150716 Address after: 610041 Sichuan city of Chengdu province Wuhou District Ximianqiao Street No. 21 South Fuk 15 Floor Patentee after: Wei Qiang Address before: 610000, No. 399, west section of Chang Xiong Road, Chengdu hi tech Zone, Sichuan Patentee before: Sichuan visualisation electronic Polytron Technologies Inc. |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150924 Address after: 610000, No. 399, west section of Chang Xiong Road, Chengdu hi tech Zone, Sichuan Patentee after: Sichuan Guanxiang Science and Technology Co.,Ltd. Address before: 610041 Sichuan city of Chengdu province Wuhou District Ximianqiao Street No. 21 South Fuk 15 Floor Patentee before: Wei Qiang |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140409 |