CN203503711U - Copper-covered AlSiC composite radiating substrate - Google Patents
Copper-covered AlSiC composite radiating substrate Download PDFInfo
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- CN203503711U CN203503711U CN201320572485.2U CN201320572485U CN203503711U CN 203503711 U CN203503711 U CN 203503711U CN 201320572485 U CN201320572485 U CN 201320572485U CN 203503711 U CN203503711 U CN 203503711U
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Abstract
The utility model discloses a copper-covered AlSiC composite radiating substrate which comprises an AlSiC substrate body and a copper layer attached to the AlSiC substrate body. A copper-aluminum spinel interface is formed between the copper layer and the AlSiC substrate body. The AlSiC composite radiation substrate is simple in structure, good in radiating performance, capable of solving the problem that the radiating substrate body is not matched with thermal expansion of a chip material, capable of preventing an LED chip packaged on the substrate body from being easily disengaged, capable of prolonging the service life of an LED, and applicable to manufacturing of low-cost large-power LEDs.
Description
Technical field
The utility model relates to a kind of heat-radiating substrate of composite material, particularly a kind of copper AlSiC composite radiating substrate that covers.
Background technology
Along with LED develops to high power, heat dissipation problem is the problem can not be ignored in LED evolution, and this has directly restricted the development of LED.If can not will reduce the operating efficiency of LED by effectively solving LED heat dissipation problem, affect the normally luminous of LED, finally make LED lose efficacy.
Traditional encapsulating material comprises silicon substrate, metal substrate and ceramic substrate etc.Silicon and ceramic substrate processing difficulties, cost is high, and thermal conductivity is low; The thermal coefficient of expansion of metal material does not mate with LED chip backing material, LED duty cycle repeatedly after, easily produce thermal stress, cause between chip and substrate and produce minute crack, increase thermal resistance, finally cause coming off.Therefore, these traditional encapsulating materials are difficult to meet the harsh demand of base plate for packaging.
The heat-radiating substrate material of new research and development has metal-core printed circuit board (MCPCB), covers copper ceramic wafer (DBC) and Metal Substrate low-temperature sintered ceramics substrate (LTCC-M) both at home and abroad.Wherein, metal-core printed circuit board thermal conductivity is subject to the restriction of insulating barrier, and thermal conductivity is low, and can not realize on plate and encapsulating; Cover copper ceramic wafer adopt Direct Bonding mode by pottery together with metal bonding, improved thermal conductivity, make thermal coefficient of expansion be controlled at a suitable scope simultaneously, but metal and ceramic respond are low, and wetability is bad, makes bonding difficulty high, interface bond strength is low, easily comes off; Metal Substrate low-temperature sintered ceramics substrate is high to compact dimensions required precision, and complex process exists bad, the caducous difficult problem of metal and ceramic wetability too.
Summary of the invention
What the purpose of this utility model was to provide a kind of chip difficult drop-off and perfect heat-dissipating covers copper AlSiC composite radiating substrate.
Cover a copper AlSiC composite radiating substrate, comprise AlSiC substrate and be attached to the copper layer on AlSiC substrate, between described copper layer and AlSiC substrate, be formed with copper aluminate eutectic interface.
Preferably, the thickness of described AlSiC substrate is 1mm ~ 1.5mm.
Preferably, the thickness of described copper layer is 0.3mm ~ 0.5mm.
Preferably, polylith AlSiC substrate is assemblied into tabular being attached on copper layer, and the space between adjacent AlSiC substrate is filled with thermal conductive adhesive.
Compared with prior art, the utlity model has following advantage and beneficial effect:
(1) the utility model employing AlSiC(aluminium silicon carbide) material becomes with copper, AlSiC composite material is because the prices of raw and semifnished materials are cheap, energy near-net-shape complicated shape, and have that thermal conductivity is high, the coefficient of expansion is adjustable, specific stiffness is large, density is little, make encapsulating structure have that power density is high, the chip life-span is long, reliability is high and the feature such as quality is light, in Electronic Packaging field, shown good application prospect.By regulating the thermal coefficient of expansion of AlSiC composite material, itself and LED chip material are matched; Heat dissipation problem while adopting AlSiC composite base plate not only effectively to solve LED chip work, heat-radiating substrate and the unmatched problem of chip material thermal expansion have been solved simultaneously, make the LED chip difficult drop-off encapsulating on plate, in the useful life of having improved LED, be applicable to the manufacture of low cost high power LED.
(2) the utility model is bonded on AlSiC substrate copper layer by the bonding method of hot melten type, forms and covers copper AlSiC composite radiating substrate.The thermal conductivity of metallic copper is very high, can reach 383W/ (m*K), is far longer than the thermal conductivity of AlSiC composite material.Therefore cover the thermal conductivity that copper can improve substrate, and then strengthen the heat dispersion of substrate.In addition, the method by HTHP makes bi-material compound, not only can reduce bonding agent, cost-saving, can also solve the problem that bonding agent thermal conductivity is not high.
(3) the utility model, by heat bonding AlSiC substrate on copper layer, can solve the problem that AlSiC substrate surface is little, expands the practicality of AlSiC substrate.
Accompanying drawing explanation
Fig. 1 be embodiment mono-of the present utility model cover copper AlSiC composite radiating substrate schematic diagram.
Fig. 2 be embodiment bis-of the present utility model cover copper AlSiC composite radiating substrate schematic diagram.
Embodiment
Below in conjunction with embodiment, the utility model is described in further detail, but execution mode of the present utility model is not limited to this.
The copper AlSiC composite radiating substrate that covers that the utility model relates to is complex copper layer on AlSiC substrate, is formed with copper aluminate eutectic interface between copper layer and AlSiC substrate.Wherein, AlSiC substrate thickness can be 1 ~ 1.5mm(millimeter), copper layer thickness can be 0.3 ~ 0.5mm, so, can reach the balance of cost, heat dispersion, intensity and technological requirement aspect.Substrate is too thick can reduce heat dispersion, when too thin, easily ruptures.The too thick cost of copper layer is high, in too thin technique, is difficult to accomplish.
Embodiment mono-:
As described in Figure 1, the present embodiment cover copper AlSiC composite radiating substrate, comprise AlSiC substrate 1 and be attached to the copper layer 2 on AlSiC substrate 1.Between copper layer and AlSiC substrate, be formed with copper aluminate eutectic interface.
Wherein, AlSiC substrate is to take the Al based composites that SiC is wild phase.AlSiC substrate thickness is 1mm, and copper layer thickness is 0.3mm.
The preparation method of covering copper AlSiC composite radiating substrate of the present embodiment comprises that step as described below (1) is to step (4).
Step (1), is polished to minute surface by the one side of the AlSiC substrate without polished and cleaned, the AlSiC base-plate cleaning then process being soaked by ultrasonic washing instrument with absolute ethyl alcohol 10 ~ 15 minutes, and dry, to remove the foreign material such as grease that adhere on substrate.
Step (2), by 200 ~ 220 ℃ of air Hot-blast Heatings 10 ~ 15 minutes for the one side of AlSiC substrate polishing, makes this lip-deep aluminium form fine and close aluminium oxide, then cooling standby.
Step (3), by copper layer will be compound with AlSiC substrate 200 ~ 220 ℃ of air Hot-blast Heatings 10 ~ 15 minutes for one side, make this lip-deep copper form fine and close oxide-film, then cooling standby.
Step (4), carries out sintering by AlSiC substrate and stacking the forcing together of copper, with nitrogen protection net belt type sintering furnace; the initial heating-up temperature of bringing-up section can be 280 ~ 320 ℃; peak temperature is up to 1000 ~ 1100 ℃, and sintering time is 60 ~ 70 minutes minutes, and in stove, oxygen content is 20～300ppm.
Embodiment bis-:
As shown in Figure 2, the present embodiment cover copper AlSiC composite radiating substrate, comprise AlSiC substrate 1, copper layer 2 and thermal conductive adhesive 3.Wherein, polylith AlSiC substrate 1 is assemblied into tabular being attached on copper layer 2, and fill with thermal conductive adhesive 3 in the space between adjacent AlSiC substrate 1, to strengthen whole intensity.Between copper layer and AlSiC substrate, be formed with copper aluminate eutectic interface.
Wherein, AlSiC substrate is to take the Al based composites that SiC is wild phase.AlSiC substrate thickness is 1mm, and copper layer thickness is 0.5mm.
The preparation method of covering copper AlSiC composite radiating substrate of the present embodiment comprises that step as described below (1) is to step (5).
Step (1), by a mirror polish of the AlSiC substrate without polished and cleaned, to minute surface, the AlSiC base-plate cleaning then process being soaked by ultrasonic washing instrument with absolute ethyl alcohol 10 ~ 15 minutes, and oven dry, to remove the foreign material such as grease that adhere on substrate.
Step (2), by 200 ~ 220 ℃ of air Hot-blast Heatings 10 ~ 15 minutes for the one side of AlSiC substrate polishing, makes this lip-deep aluminium form fine and close aluminium oxide, then cooling standby.
Step (3), by copper layer will be compound with AlSiC substrate 200 ~ 220 ℃ of air Hot-blast Heatings 10 ~ 15 minutes for one side, make this lip-deep copper form fine and close oxide-film, then cooling standby.
Step (4), according to AlSiC substrate being arranged shown in Fig. 2, polylith AlSiC substrate is closely connected be mutually assemblied into tabular, and by burnishing surface towards being placed down in the copper aspect after oxidation processes, repeatedly force together and carry out sintering.During sintering, preferably adopt nitrogen protection net belt type sintering furnace, the initial heating-up temperature of bringing-up section is 208 ~ 320 ℃, and peak temperature is up to 1000 ~ 1100 ℃, and sintering time is 60 ~ 70 minutes, and in stove, oxygen content is 20～300ppm.Cooling standby.
Step (5), by above-mentioned copper AlSiC composite radiating base plate heating to 55 ~ 65 ℃ of covering, with heat-conducting glue embedding, AlSiC meets the gap between substrate, after heat-conducting glue solidifies, is cooled to room temperature.
The composite base plate of the utility model for adopting AlSiC material to become with copper.AlSiC composite material is because the prices of raw and semifnished materials are cheap, energy near-net-shape complicated shape, and there is the characteristic that thermal conductivity is high, the coefficient of expansion is adjustable, specific stiffness is large, density is little, make encapsulating structure have that power density is high, the chip life-span is long, reliability is high and the feature such as quality is light, in Electronic Packaging field, shown good application prospect.By regulating the thermal coefficient of expansion of AlSiC composite material, can make itself and LED chip material match.Employing is covered copper AlSiC composite radiating substrate and is not only effectively solved the LED chip heat dissipation problem in when work, heat-radiating substrate and the unmatched problem of chip material thermal expansion have been solved simultaneously, make the LED chip difficult drop-off encapsulating on plate, improve the useful life of LED, be applicable to the manufacture of low cost high power LED.
The utility model is bonded on AlSiC substrate copper layer by the bonding method of hot melten type, forms and covers copper AlSiC composite radiating substrate.The thermal conductivity of metallic copper is very high, can reach 383W/ (m*K), and the thermal conductivity (200W/(mK) that is far longer than AlSiC material is following).Therefore cover the thermal conductivity that copper can improve substrate, and then strengthen the heat dispersion of substrate.In addition, the method by HTHP makes bi-material compound, not only can reduce bonding agent, cost-saving, can also solve the problem that bonding agent thermal conductivity is not high.
In addition, the utility model, by heat bonding AlSiC substrate on copper layer, can solve the problem that AlSiC substrate surface is little, expands the practicality of AlSiC substrate.
Above-described embodiment is preferably execution mode of the utility model; but execution mode of the present utility model is not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present utility model and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection range of the present utility model.
Claims (4)
1. cover a copper AlSiC composite radiating substrate, it is characterized in that, comprise AlSiC substrate and be attached to the copper layer on AlSiC substrate, between described copper layer and AlSiC substrate, be formed with copper aluminate eutectic interface.
2. the copper AlSiC composite radiating substrate that covers according to claim 1, is characterized in that, the thickness of described AlSiC substrate is 1mm ~ 1.5mm.
3. the copper AlSiC composite radiating substrate that covers according to claim 1, is characterized in that, the thickness of described copper layer is 0.3mm ~ 0.5mm.
4. the copper AlSiC composite radiating substrate that covers according to claim 1, is characterized in that, polylith AlSiC substrate is assemblied into tabular being attached on copper layer, and the space between adjacent AlSiC substrate is filled with thermal conductive adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320572485.2U CN203503711U (en) | 2013-09-16 | 2013-09-16 | Copper-covered AlSiC composite radiating substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320572485.2U CN203503711U (en) | 2013-09-16 | 2013-09-16 | Copper-covered AlSiC composite radiating substrate |
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| CN203503711U true CN203503711U (en) | 2014-03-26 |
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| CN201320572485.2U Expired - Fee Related CN203503711U (en) | 2013-09-16 | 2013-09-16 | Copper-covered AlSiC composite radiating substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515521A (en) * | 2013-09-16 | 2014-01-15 | 惠州雷士光电科技有限公司 | Copper-covered ALSiC composite radiating substrate and manufacturing method thereof |
| CN114318102A (en) * | 2022-03-14 | 2022-04-12 | 泰格尔科技有限公司 | Preparation method of high-performance double-sided radiating gasket for packaging high-power IGBT module |
-
2013
- 2013-09-16 CN CN201320572485.2U patent/CN203503711U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515521A (en) * | 2013-09-16 | 2014-01-15 | 惠州雷士光电科技有限公司 | Copper-covered ALSiC composite radiating substrate and manufacturing method thereof |
| CN103515521B (en) * | 2013-09-16 | 2016-06-08 | 惠州雷士光电科技有限公司 | One covers copper AlSiC composite radiating substrate and preparation method thereof |
| CN114318102A (en) * | 2022-03-14 | 2022-04-12 | 泰格尔科技有限公司 | Preparation method of high-performance double-sided radiating gasket for packaging high-power IGBT module |
| CN114318102B (en) * | 2022-03-14 | 2022-06-24 | 泰格尔科技有限公司 | Preparation method of high-performance double-sided radiating gasket for packaging high-power IGBT module |
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