CN203466226U - Packaging structure of organic light-emitting device and display device - Google Patents
Packaging structure of organic light-emitting device and display device Download PDFInfo
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- CN203466226U CN203466226U CN201320607547.9U CN201320607547U CN203466226U CN 203466226 U CN203466226 U CN 203466226U CN 201320607547 U CN201320607547 U CN 201320607547U CN 203466226 U CN203466226 U CN 203466226U
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Abstract
The utility model provides a packaging structure of an organic light-emitting device and a display device, and belongs to the field of organic electroluminescence. The packaging structure of the organic light-emitting device comprises a substrate for supporting the organic light-emitting device, the organic light-emitting device arranged on the substrate and at least one film packaging layer covering the organic light-emitting device. The film packaging layer is formed by an inorganic film, a fluorocarbon polymer film and an organic polymer film which is arranged between the inorganic film and the fluorocarbon polymer film. Through the technical scheme in the utility model, the water oxygen blocking capability of the film packaging layer can be effectively improved, thereby prolonging the service life of the OLED.
Description
Technical field
The utility model includes organic electro luminescent field, refers to especially a kind of encapsulating structure, display unit of organic electroluminescence device.
Background technology
Organic electroluminescence device, claims again organic electroluminescent diode (OLED) device, is a kind of brand-new Display Technique, and its display quality can be comparable with Thin Film Transistor-LCD (TFT-LCD), and price is cheap more than it.OLED because its luminosity is high, rich color, low-voltage direct drive, preparation technology is simple etc. in flat panel display significant advantage, thereby day by day become the focus of international research.Within the time less than 20 years, OLED enters the industrialization stage by research.
OLED device generally adopts the glass substrate of rigidity or flexible polymeric substrates as carrier, deposit transparent anode, metallic cathode and the two-layer above organic luminous layer that is clipped between the two, consists of.These organic luminous layers generally comprise hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer etc.OLED device is very responsive to oxygen and steam, bad if oxygen and steam infiltration OLED device inside can cause such as stain, pin hole, anodizing, organic material chemical reaction etc., thereby has a strong impact on OLED device lifetime.Therefore, encapsulation technology is one of key realizing OLED industrialization.
Traditional encapsulation technology comprises that the encapsulation of employing crown cap and employing glass cover encapsulate two classes, and this two classes packaged type all has better water oxygen obstructing capacity, but crown cap is opaque, inapplicable a lot of application, and glass cover has the shortcoming that mechanical strength is lower.In addition, these two kinds of packaged types all need to apply sealant around in organic light emission region, and moisture absorbent is placed on wherein, make like this size of display device thicker, can not meet people for the flexibility of OLED device and lightening demand.Therefore, exploitation thin-film package technology has very large necessity.
Existing thin-film package technology is the multi-layer film structure that the organic polymer thin film prepared based on technique for vacuum coating and inorganic thin film replace, wherein, inorganic thin film has higher compactness, it is main water oxygen barrier layer, but the elasticity of inorganic thin film is lower, internal stress is large, than being easier to, be subject to External Force Acting produce crack or peel off with OLED device, therefore to arrange in pairs or groups organic polymer thin film as resilient coating, organic polymer thin film can suppress inorganic thin film cracking effectively because having higher elasticity, but organic polymer thin film is poor to the obstructing capacity of water oxygen, even some organic polymer itself has stronger water absorption, so aqueous vapor has an opportunity to enter OLED device inside through the defect of adjacent inorganic thin film, OLED is reduced device lifetime.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of encapsulating structure, display unit of organic electroluminescence device, can effectively improve the water oxygen obstructing capacity of thin-film encapsulation layer, thereby effectively extends the life-span of OLED device.
For solving the problems of the technologies described above, embodiment of the present utility model provides technical scheme as follows:
On the one hand, provide a kind of encapsulating structure of organic electroluminescence device, comprising:
Substrate for organic electroluminescence device described in support;
Be positioned at the described organic electroluminescence device on described substrate;
Cover at least one thin-film encapsulation layer of described organic electroluminescence device, described thin-film encapsulation layer is comprised of inorganic thin film, fluorocarbon film and the organic polymer thin film between described inorganic thin film and fluorocarbon film.
Further, on described organic electroluminescence device, be coated with 1～20 thin-film encapsulation layer.
Further, described fluorocarbon film is the thin polymer film that fluorocarbon gas plasma polymerization is formed, and described fluorocarbon gas comprises CHF
3, C
3f
8, C
4f
10, C
2f
4and C
4f
8.
Further, the thickness of described inorganic thin film is 5nm-200nm, and the thickness of described fluorocarbon film is 5nm-200nm, and the thickness of described organic polymer thin film is 5nm-200nm.
Further, the material of described inorganic thin film is selected from Al
2o
3, TiO
2, ZrO
2, MgO, HfO
2, Ta
2o
5, Si
3n
4, AlN, SiN, SiNO, SiO, SiO
2, SiO
x, SiC and ITO.
The utility model embodiment also provides a kind of display unit, comprises the encapsulating structure of organic electroluminescence device as above.
Embodiment of the present utility model has following beneficial effect:
In such scheme, in thin-film encapsulation layer, add fine and close fluorocarbon film, because fluorocarbon polymer has extremely low surface energy and stronger hydrophobic ability, therefore can effectively improve the ability that thin-film encapsulation layer intercepts water oxygen, in addition, because fluorocarbon film is easy to form smoother pattern, therefore the inorganic thin film of preparing on it also easily obtains level and smooth, the pattern of less pin hole, this thin-film encapsulation layer is applied in the encapsulation of OLED device, can effectively extend the life-span of OLED device, and be conducive to improve OLED device preserve and use procedure in reliability.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the encapsulating structure of the utility model embodiment organic electroluminescence device;
Fig. 2 is the structural representation of the packaging film that comprises inorganic layer, organic polymer thin film and fluorocarbon film.
Reference numeral
1 thin-film encapsulation layer 2OLED device 3 substrates
11 inorganic thin film 12 organic polymer thin film 13 fluorocarbon films
Embodiment
For technical problem, technical scheme and advantage that embodiment of the present utility model will be solved are clearer, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
Embodiment of the present utility model is poor to the obstructing capacity of water oxygen for existing thin-film package technology, affect the OLED problem of device lifetime, a kind of encapsulating structure, display unit of organic electroluminescence device are provided, can effectively improve the water oxygen obstructing capacity of thin-film encapsulation layer, thereby effectively extend the life-span of OLED device.
Fig. 1 is the schematic diagram of encapsulating structure of the OLED device of the utility model embodiment, and as shown in Figure 1, the present embodiment comprises:
Be positioned at the OLED device 2 on substrate 3;
At least one thin-film encapsulation layer 1 that covers OLED device 2, as shown in Figure 2, thin-film encapsulation layer 1 is comprised of inorganic thin film 11, fluorocarbon film 13 and the organic polymer thin film 12 between inorganic thin film 11 and fluorocarbon film 13.
The encapsulating structure of OLED device of the present utility model, in thin-film encapsulation layer, add fine and close fluorocarbon film, because fluorocarbon polymer has extremely low surface energy and stronger hydrophobic ability, therefore can effectively improve the ability that thin-film encapsulation layer intercepts water oxygen, in addition, because fluorocarbon film is easy to form smoother pattern, therefore the inorganic thin film of preparing on it also easily obtains level and smooth, the pattern of less pin hole, this thin-film encapsulation layer is applied in the encapsulation of OLED device, can effectively extend the life-span of OLED device, and be conducive to improve OLED device preserve and use procedure in reliability.
Wherein, on OLED device, can cover as required one or more thin-film encapsulation layer, particularly, taking into account the oxygen ability and lightening in the situation that of blocking water, on OLED device, can be coated with 1～20 thin-film encapsulation layer.While covering a plurality of thin-film encapsulation layer on OLED device, as shown in Figure 2, a plurality of thin-film encapsulation layer mutually stack cover on OLED device.
Particularly, described fluorocarbon film is the thin polymer film that fluorocarbon gas plasma polymerization is formed, and described fluorocarbon gas comprises CHF
3, C
3f
8, C
4f
10, C
2f
4and C
4f
8.
Further, the thickness of described inorganic thin film is 5nm-200nm, and the thickness of described fluorocarbon film is 5nm-200nm, and the thickness of described organic polymer thin film is 5nm-200nm.Wherein, the material of inorganic thin film is selected from Al
2o
3, TiO
2, ZrO
2, MgO, HfO
2, Ta
2o
5, Si
3n
4, AlN, SiN, SiNO, SiO, SiO
2, SiO
x, a kind of in SiC and ITO.The material of organic polymer is selected from PET(polyethylene terephthalate), PEN(PEN), PC(Merlon), PI(polyimides), PVC(polyvinyl chloride), PS(polystyrene), PMMA(polymethyl methacrylate), PBT(polybutylene terephthalate (PBT)), PSO(polysulfones), PES(is poly-to benzene diethyl sulfone), PE (polyethylene), PP(polypropylene), silicone(polysiloxanes), PA(polyamide), PVDF(polyvinylidene fluoride), EVA(ethylene-vinyl acetate copolymer), EVAL(ethylene-vinyl alcohol copolymer), PAN(polypropylene cyanogen), PVAc(polyvinyl acetate), Parylene(parylene), Polyurea(polyureas), PTFE(polytetrafluoroethylene) and epoxy resin(epoxy resin) in a kind of.
The utility model embodiment also provides a kind of display unit, comprises the encapsulating structure of OLED device as above.Wherein, the same above-described embodiment of the encapsulating structure of OLED device, does not repeat them here.In addition, the structure of other parts of display unit can, with reference to prior art, be not described in detail this herein.This display unit can be: Electronic Paper, TV, display, DPF, mobile phone, panel computer etc. have product or the parts of any Presentation Function.
The utility model embodiment also provides a kind of method for packing of organic electroluminescence device, comprising:
One substrate is provided;
On described substrate, prepare described OLED device;
On described OLED device, form at least one thin-film encapsulation layer, described thin-film encapsulation layer is comprised of inorganic thin film, fluorocarbon film and the organic polymer thin film between described inorganic thin film and fluorocarbon film.
The method for packing of OLED device of the present utility model, in thin-film encapsulation layer, add fine and close fluorocarbon film, because fluorocarbon polymer has extremely low surface energy and stronger hydrophobic ability, therefore can effectively improve the ability that thin-film encapsulation layer intercepts water oxygen, in addition, because fluorocarbon film is easy to form smoother pattern, therefore the inorganic thin film of preparing on it also easily obtains level and smooth, the pattern of less pin hole, this thin-film encapsulation layer is applied in the encapsulation of OLED device, can effectively extend the life-span of OLED device, and be conducive to improve OLED device preserve and use procedure in reliability.
Particularly, on described OLED device, forming thin-film encapsulation layer comprises:
On described OLED device, deposit one deck inorganic material and form described inorganic thin film;
On described inorganic thin film, deposit one deck organic polymer and form described organic polymer thin film;
On described organic polymer thin film, fluorocarbon gas plasma polymerization is formed to described fluorocarbon film.
Wherein, described one deck inorganic material that deposits on described OLED device forms described inorganic thin film and comprises: adopt ion beam sputtering or magnetron sputtering deposition or ald to deposit one deck inorganic material on described OLED device and form described inorganic thin film.
Described one deck organic polymer that deposits on described inorganic thin film forms described organic polymer thin film and comprises: adopt solution film forming method or chemical vapour deposition technique on described inorganic thin film, to deposit one deck organic polymer and form described organic polymer thin film.Preferably adopt chemical vapour deposition technique on described inorganic thin film, to form described organic polymer thin film.
Further, describedly on described organic polymer thin film, fluorocarbon gas plasma polymerization is formed to described fluorocarbon film and comprise: fluorocarbon gas is carried out to radio frequency discharge and produce fluorocarbon gas plasma, wherein RF source frequencies is 13.56MHz, radio frequency source power is 50-200W, ambient pressure is 350mTorr, fluorocarbon gas flow velocity is 20-80sccm, and described fluorocarbon gas comprises CHF
3, C
3f
8, C
4f
10, C
2f
4and C
4f
8.
Below in conjunction with specific embodiment, the encapsulating structure of OLED device of the present utility model and method for packing are described in detail:
Existing thin-film encapsulation layer is alternately superposeed and forms by organic polymer thin film and inorganic thin film, wherein organic polymer thin film is poor to the obstructing capacity of water oxygen, even some organic polymer itself has stronger water absorption, so aqueous vapor has an opportunity to enter OLED device inside through the defect of adjacent inorganic thin film, and OLED is reduced device lifetime.The hydrophobicity that changes organic polymer material surface has two kinds of modes, the one, by changing the chemical characteristic on organic polymer material surface, low-surface-energy falls, the 2nd, increase the roughness on organic polymer material surface, with regard to first kind of way, fluorine atom is because having less atom particle diameter and larger electronegativity, can form stable chemical bond with other atoms (as carbon atom), so fluorine atom is the atom that can effectively reduce material surface energy.By fluorocarbons plasma polymerization or plasma modification method, can make organic polymer obtain hydrophobicity, as CHF
3there is polymerization in gas, can, at ITO Surface Creation one deck CFx layer, make ITO have hydrophobicity, and can improve the evenness on ITO surface after surface plasma is processed; CF in addition
4after the plasma that gas generates and silastic surface effect, there is the change of chemical bond, at silastic surface, generated fluorine carbon functional group and fluorine functionalized silicon group, can improve the hydrophobicity of silicon rubber.
According to this characteristic of fluorocarbons, the utility model provides a kind of method that adds fine and close fluorocarbon film in thin-film encapsulation layer, because fluorocarbons has extremely low surface energy and stronger hydrophobic ability simultaneously, therefore this improved film encapsulation method is encapsulated for OLED, can improve a lot to the oxygen ability that blocks water of thin-film encapsulation layer.
Embodiment 1Al
2o
3(50nm)/polychlorostyrene is for paraxylene (50nm)/CFx (10nm)
The method for packing of the OLED device of the present embodiment comprises the following steps:
Step a a: substrate is provided, and this substrate can be quartz base plate or glass substrate;
Step b: OLED device is prepared on substrate;
Step c: adopt the method for ion beam sputter depositing to deposit one deck Al on the substrate through step b
2o
3film, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 10min, Al
2o
3the thickness of film is 50nm;
Steps d: adopt the method for chemical vapour deposition (CVD) at Al
2o
3on film, deposit one deck polychlorostyrene for paraxylene, particularly, first at 100 ℃, solid-state C type polychlorostyrene is distilled for paraxylene, make C type polychlorostyrene for paraxylene 2 side chain carbon-carbon bonds fractures 630 ℃ time, generate stable activated monomer, then this activated monomer is introduced and in deposit cavity, is deposited on Al by conduit
2o
3on film, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 5min, the C type polychlorostyrene of deposition is 50nm for paraxylene thickness;
Step e: adopt CHF on for paraxylene layer in polychlorostyrene
3the CFx thin polymer film that the mode deposit thickness of gaseous plasma polymerization is 10nm.Particularly, can be to CHF
3gas carries out radio frequency discharge and produces CHF
3gaseous plasma, wherein RF source frequencies is 13.56MHz, and radio frequency source power is 50-200W, and ambient pressure is 350mTorr, CHF
3gas flow rate is 20-80sccm.
Repeat above step c-e, can on OLED device, form a plurality of thin-film encapsulation layer, obtain the encapsulating structure of OLED device.If need to form M thin-film encapsulation layer on OLED device, the above step of repetitive cycling is M time, and particularly, the present embodiment can repeat above step c-e tri-times, forms the thin-film encapsulation layer with three layers of fluorocarbon film.
Embodiment 2SiO (100nm)/polychlorostyrene is for paraxylene (200nm)/CFx (20nm)
The method for packing of the OLED device of the present embodiment comprises the following steps:
Step a a: substrate is provided, and this substrate can be quartz base plate or glass substrate;
Step b: OLED device is prepared on substrate;
Step c: adopt the method for magnetron sputtering to deposit one deck SiO film on the substrate through step b, in deposit cavity, vacuum degree is 10
-5pa, sedimentation time is 10min, the thickness of SiO film is 100nm;
Steps d: adopt the method for chemical vapour deposition (CVD) to deposit one deck polychlorostyrene for paraxylene on SiO film, particularly, first at 100 ℃, solid-state C type polychlorostyrene is distilled for paraxylene, make C type polychlorostyrene for paraxylene 2 side chain carbon-carbon bonds fractures 630 ℃ time, generate stable activated monomer, again this activated monomer is introduced in deposit cavity and is deposited on SiO film by conduit, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 20min, the C type polychlorostyrene of deposition is 200nm for paraxylene thickness;
Step e: adopt CHF on for paraxylene layer in polychlorostyrene
3the CFx thin polymer film that the mode deposit thickness of gaseous plasma polymerization is 20nm, the encapsulating structure of formation OLED device.Particularly, can be to CHF
3gas carries out radio frequency discharge and produces CHF
3gaseous plasma, wherein RF source frequencies is 13.56MHz, and radio frequency source power is 50-200W, and ambient pressure is 350mTorr, CHF
3gas flow rate is 20-80sccm.
Embodiment 3SiON (100nm)/polychlorostyrene is for paraxylene (200nm)/CFx (20nm)
The method for packing of the OLED device of the present embodiment comprises the following steps:
Step a a: substrate is provided, and this substrate can be quartz base plate or glass substrate;
Step b: OLED device is prepared on substrate;
Step c: adopt the method for magnetron sputtering to deposit one deck SiON film on the substrate through step b, in deposit cavity, vacuum degree is 10
-5pa, sedimentation time is 10min, the thickness of SiON film is 100nm;
Steps d: adopt the method for chemical vapour deposition (CVD) to deposit one deck polychlorostyrene for paraxylene on SiON film, particularly, first at 100 ℃, solid-state C type polychlorostyrene is distilled for paraxylene, make C type polychlorostyrene for paraxylene 2 side chain carbon-carbon bonds fractures 630 ℃ time, generate stable activated monomer, again this activated monomer is introduced in deposit cavity and is deposited on SiON film by conduit, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 20min, the C type polychlorostyrene of deposition is 200nm for paraxylene thickness;
Step e: adopt CHF on for paraxylene layer in polychlorostyrene
3the CFx thin polymer film that the mode deposit thickness of gaseous plasma polymerization is 20nm, the encapsulating structure of formation OLED device.Particularly, can be to CHF
3gas carries out radio frequency discharge and produces CHF
3gaseous plasma, wherein RF source frequencies is 13.56MHz, and radio frequency source power is 50-200W, and ambient pressure is 350mTorr, CHF
3gas flow rate is 20-80sccm.
Embodiment 4SiN (30nm)/polychlorostyrene is for paraxylene (50nm)/CFx (10nm)
The method for packing of the OLED device of the present embodiment comprises the following steps:
Step a a: substrate is provided, and this substrate can be quartz base plate or glass substrate;
Step b: OLED device is prepared on substrate;
Step c: adopt the method for magnetron sputtering to deposit layer of sin film on the substrate through step b, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 10min, the thickness of SiN film is 30nm;
Steps d: adopt the method for chemical vapour deposition (CVD) to deposit one deck polychlorostyrene for paraxylene on SiN film, particularly, first at 100 ℃, solid-state C type polychlorostyrene is distilled for paraxylene, make C type polychlorostyrene for paraxylene 2 side chain carbon-carbon bonds fractures 630 ℃ time, generate stable activated monomer, again this activated monomer is introduced in deposit cavity and is deposited on SiN film by conduit, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 5min, the C type polychlorostyrene of deposition is 50nm for paraxylene thickness;
Step e: adopt CHF on for paraxylene layer in polychlorostyrene
3the CFx thin polymer film that the mode deposit thickness of gaseous plasma polymerization is 10nm.Particularly, can be to CHF
3gas carries out radio frequency discharge and produces CHF
3gaseous plasma, wherein RF source frequencies is 13.56MHz, and radio frequency source power is 50-200W, and ambient pressure is 350mTorr, CHF
3gas flow rate is 20-80sccm.
Repeat above step c-e, can on OLED device, form a plurality of thin-film encapsulation layer, obtain the encapsulating structure of OLED device.If need to form M thin-film encapsulation layer on OLED device, the above step of repetitive cycling is M time, and particularly, the present embodiment can repeat above step c-e tri-times, forms the thin-film encapsulation layer with three layers of fluorocarbon film.
Embodiment 5SiN (30nm)/epoxy resin (200nm)/CFx (20nm)
The method for packing of the OLED device of the present embodiment comprises the following steps:
Step a a: substrate is provided, and this substrate can be quartz base plate or glass substrate;
Step b: OLED device is prepared on substrate;
Step c: adopt the method for magnetron sputtering to deposit layer of sin film on the substrate through step b, in deposit cavity, vacuum degree is 10
-5pa, sedimentation time is 10min, the thickness of SiN film is 30nm;
Steps d: the mixture of acrylic compounds epoxy resin and light trigger is fallen on SiN film, and casting film-forming, is caused and made it polymerization by UV-irradiation, the epoxy resin thin film that formation thickness is 200nm;
Step e: adopt C on epoxy resin thin film
2f
4the CFx thin polymer film that the mode deposit thickness of gaseous plasma polymerization is 20nm, the encapsulating structure of formation OLED device.Particularly, can be to C
2f
4gas carries out radio frequency discharge and produces C
2f
4gaseous plasma, wherein RF source frequencies is 13.56MHz, and radio frequency source power is 50-200W, and ambient pressure is 350mTorr, C
2f
4gas flow rate is 20-80sccm.
Embodiment 6Al
2o
3(5nm)/polychlorostyrene is for paraxylene (50nm)/CFx (10nm)
The method for packing of the OLED device of the present embodiment comprises the following steps:
Step a a: substrate is provided, and this substrate can be quartz base plate or glass substrate;
Step b: OLED device is prepared on substrate;
Step c: adopt the method for ion beam sputter depositing to deposit one deck Al on the substrate through step b
2o
3film, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 1min, Al
2o
3the thickness of film is 5nm;
Steps d: adopt the method for chemical vapour deposition (CVD) at Al
2o
3on film, deposit one deck polychlorostyrene for paraxylene, particularly, first at 100 ℃, solid-state C type polychlorostyrene is distilled for paraxylene, make C type polychlorostyrene for paraxylene 2 side chain carbon-carbon bonds fractures 630 ℃ time, generate stable activated monomer, then this activated monomer is introduced and in deposit cavity, is deposited on Al by conduit
2o
3on film, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 5min, the C type polychlorostyrene of deposition is 50nm for paraxylene thickness;
Step e: adopt CHF on for paraxylene layer in polychlorostyrene
3the CFx thin polymer film that the mode deposit thickness of gaseous plasma polymerization is 10nm.Particularly, can be to CHF
3gas carries out radio frequency discharge and produces CHF
3gaseous plasma, wherein RF source frequencies is 13.56MHz, and radio frequency source power is 50-200W, and ambient pressure is 350mTorr, CHF
3gas flow rate is 20-80sccm.
Repeat above step c-e, can on OLED device, form a plurality of thin-film encapsulation layer, obtain the encapsulating structure of OLED device.If need to form M thin-film encapsulation layer on OLED device, the above step of repetitive cycling is M time, and particularly, the present embodiment can repeat above step c-e 20 times, forms the thin-film encapsulation layer with 20 layers of fluorocarbon film.
Embodiment 7Al
2o
3(200nm)/polychlorostyrene is for paraxylene (100nm)/CFx (5nm)
The method for packing of the OLED device of the present embodiment comprises the following steps:
Step a a: substrate is provided, and this substrate can be quartz base plate or glass substrate;
Step b: OLED device is prepared on substrate;
Step c: adopt the method for ion beam sputter depositing to deposit one deck Al on the substrate through step b
2o
3film, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 40min, Al
2o
3the thickness of film is 200nm;
Steps d: adopt the method for chemical vapour deposition (CVD) at Al
2o
3on film, deposit one deck polychlorostyrene for paraxylene, particularly, first at 100 ℃, solid-state C type polychlorostyrene is distilled for paraxylene, make C type polychlorostyrene for paraxylene 2 side chain carbon-carbon bonds fractures 630 ℃ time, generate stable activated monomer, then this activated monomer is introduced and in deposit cavity, is deposited on Al by conduit
2o
3on film, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 10min, the C type polychlorostyrene of deposition is 100nm for paraxylene thickness;
Step e: adopt CHF on for paraxylene layer in polychlorostyrene
3the CFx thin polymer film that the mode deposit thickness of gaseous plasma polymerization is 5nm.Particularly, can be to CHF
3gas carries out radio frequency discharge and produces CHF
3gaseous plasma, wherein RF source frequencies is 13.56MHz, and radio frequency source power is 50-200W, and ambient pressure is 350mTorr, CHF
3gas flow rate is 20-80sccm.
Repeat above step c-e, can on OLED device, form a plurality of thin-film encapsulation layer, obtain the encapsulating structure of OLED device.If need to form M thin-film encapsulation layer on OLED device, the above step of repetitive cycling is M time, and particularly, the present embodiment can only be carried out above-mentioned steps c-e once, forms the thin-film encapsulation layer with one deck fluorocarbon film.
Embodiment 8Al
2o
3(50nm)/polychlorostyrene is for paraxylene (5nm)/CFx (200nm)
The method for packing of the OLED device of the present embodiment comprises the following steps:
Step a a: substrate is provided, and this substrate can be quartz base plate or glass substrate;
Step b: OLED device is prepared on substrate;
Step c: adopt the method for ion beam sputter depositing to deposit one deck Al on the substrate through step b
2o
3film, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 10min, Al
2o
3the thickness of film is 50nm;
Steps d: adopt the method for chemical vapour deposition (CVD) at Al
2o
3on film, deposit one deck polychlorostyrene for paraxylene, particularly, first at 100 ℃, solid-state C type polychlorostyrene is distilled for paraxylene, make C type polychlorostyrene for paraxylene 2 side chain carbon-carbon bonds fractures 630 ℃ time, generate stable activated monomer, then this activated monomer is introduced and in deposit cavity, is deposited on Al by conduit
2o
3on film, in deposit cavity, vacuum degree is 10
-6pa, sedimentation time is 0.5min, the C type polychlorostyrene of deposition is 5nm for paraxylene thickness;
Step e: adopt CHF on for paraxylene layer in polychlorostyrene
3the CFx thin polymer film that the mode deposit thickness of gaseous plasma polymerization is 200nm.Particularly, can be to CHF
3gas carries out radio frequency discharge and produces CHF
3gaseous plasma, wherein RF source frequencies is 13.56MHz, and radio frequency source power is 50-200W, and ambient pressure is 350mTorr, CHF
3gas flow rate is 20-80sccm.
Repeat above step c-e, can on OLED device, form a plurality of thin-film encapsulation layer, obtain the encapsulating structure of OLED device.If need to form M thin-film encapsulation layer on OLED device, the above step of repetitive cycling is M time, and particularly, the present embodiment can repeat above step c-e tri-times, forms the thin-film encapsulation layer with three layers of fluorocarbon film.
The encapsulating structure of the OLED device forming by above embodiment, in thin-film encapsulation layer, add one or more layers fine and close fluorocarbon film, because fluorocarbon polymer has extremely low surface energy and stronger hydrophobic ability, therefore can effectively improve the ability that thin-film encapsulation layer intercepts water oxygen, this thin-film encapsulation layer is applied in the encapsulation of OLED device, can effectively extend the life-span of OLED device, and be conducive to improve the reliability of OLED device in preservation and use procedure.
The above is preferred implementation of the present utility model; should be understood that; for those skilled in the art; do not departing under the prerequisite of principle described in the utility model; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (6)
1. an encapsulating structure for organic electroluminescence device, is characterized in that, comprising:
Substrate for organic electroluminescence device described in support;
Be positioned at the described organic electroluminescence device on described substrate;
Cover at least one thin-film encapsulation layer of described organic electroluminescence device, described thin-film encapsulation layer is comprised of inorganic thin film, fluorocarbon film and the organic polymer thin film between described inorganic thin film and fluorocarbon film.
2. the encapsulating structure of organic electroluminescence device according to claim 1, is characterized in that, is coated with 1～20 thin-film encapsulation layer on described organic electroluminescence device.
3. the encapsulating structure of organic electroluminescence device according to claim 1, is characterized in that, described fluorocarbon film is the thin polymer film that fluorocarbon gas plasma polymerization is formed, and described fluorocarbon gas comprises CHF
3, C
3f
8, C
4f
10, C
2f
4and C
4f
8.
4. the encapsulating structure of organic electroluminescence device according to claim 3, it is characterized in that, the thickness of described inorganic thin film is 5nm-200nm, and the thickness of described fluorocarbon film is 5nm-200nm, and the thickness of described organic polymer thin film is 5nm-200nm.
5. according to the encapsulating structure of the organic electroluminescence device described in any one in claim 1-4, it is characterized in that, the material of described inorganic thin film is selected from Al
2o
3, TiO
2, ZrO
2, MgO, HfO
2, Ta
2o
5, Si
3n
4, AlN, SiN, SiNO, SiO, SiO
2, SiO
x, SiC and ITO.
6. a display unit, is characterized in that, comprises the encapsulating structure of the organic electroluminescence device as described in any one in claim 1-5.
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| CN103490019A (en) * | 2013-09-29 | 2014-01-01 | 京东方科技集团股份有限公司 | Organic electroluminescence device packaging structure and method and display device |
| CN104051671A (en) * | 2014-06-16 | 2014-09-17 | 京东方科技集团股份有限公司 | OLED display device and manufacturing method thereof |
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- 2013-09-29 CN CN201320607547.9U patent/CN203466226U/en not_active Expired - Lifetime
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| CN103490019A (en) * | 2013-09-29 | 2014-01-01 | 京东方科技集团股份有限公司 | Organic electroluminescence device packaging structure and method and display device |
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| CN103490019B (en) * | 2013-09-29 | 2016-02-17 | 京东方科技集团股份有限公司 | The encapsulating structure of organic electroluminescence device and method for packing, display unit |
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