CN203434937U - High voltage generator with feedback devices - Google Patents

High voltage generator with feedback devices Download PDF

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Publication number
CN203434937U
CN203434937U CN201320397979.1U CN201320397979U CN203434937U CN 203434937 U CN203434937 U CN 203434937U CN 201320397979 U CN201320397979 U CN 201320397979U CN 203434937 U CN203434937 U CN 203434937U
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China
Prior art keywords
transistor
unit
resistance
emitter
base
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Expired - Lifetime
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CN201320397979.1U
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Chinese (zh)
Inventor
郭胜岩
赵军伟
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Shaanxi Kelvin's Observation And Control Technology Co Ltd
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Shaanxi Kelvin's Observation And Control Technology Co Ltd
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Priority to CN201320397979.1U priority Critical patent/CN203434937U/en
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Abstract

The utility model discloses a high voltage generator with feedback devices. A high voltage power amplifying unit of the high voltage generator is characterized in that three levels of amplifying circuits are used for amplifying signals, a common collector is adopted to the first-level amplifying unit and the second-level amplifying unit to conduct output, and the circuit mode brings convenience to high voltage output. The feedback devices are connected between the signal output end and the signal input end of the high voltage power amplifying unit, and have the effect that the output voltage can be controlled through an input pole so that linear controllable high voltage signals can be output. In addition, transistors and resistors in the second-level amplifying unit and the third-level amplifying unit of the high voltage power amplifying unit are all connected in series, and therefore the voltage endurance capacity of the circuits is improved.

Description

A kind of high pressure generator with feedback
Technical field
The present invention relates to a kind of high pressure generator.
Background technology
Increasing because of the power of present discrete device, ceiling voltage has arrived KV level, and now domestic large power test is relatively backward, lacks corresponding checkout equipment, designs a kind of high pressure generator for this reason.
Summary of the invention
For solving current general high voltage generator because barotolerance is poor and the bad technical problem that cannot complete high-power discrete device test of output signal controllability, the invention provides a kind of high pressure generator that can detect high-power discrete device.
Technical solution of the present invention is as follows:
With a high pressure generator for feedback, comprise high pressure power amplifier unit, high voltage source and negative feedback unit for powering to high pressure power amplifier unit, its special character is:
Described high pressure power amplifier unit comprises one-level transistor amplifying unit, secondary transistor amplifying unit, three grades of transistor amplifying units of cascade;
Described one-level transistor amplifying unit comprises transistor Q1, the base resistance R25 being connected with transistor Q1 base stage, the emitter resistance R22 being connected with transistor Q1 emitter, another termination input signal of described base resistance R25, the other end ground connection of described emitter resistance R22;
Described secondary transistor amplifying unit comprises transistor unit Q2, base resistance unit R 26, emitter resistance R23, collector resistance R11;
The collector electrode of described transistor unit Q2 is connected with collector resistance R11; The base stage of described transistor unit Q2 is connected with the collector electrode of the transistor Q1 of one-level transistor amplifying unit; The emitter of described transistor unit Q2 links with emitter resistance R23, the other end ground connection of described emitter resistance R23;
One termination power of described base resistance unit R 26, the other end of described base resistance unit R 26 is connected with the collector electrode of transistor Q1;
Described transistor unit Q2 comprises a plurality of transistor Q21, and wherein, the emitter of a upper transistor Q21 is connected with the collector electrode of next transistor Q21, and described base resistance unit R 26 comprises a plurality of base resistance R21 one to one with transistor Q21; One end of described base resistance R21 is connected with the base stage of corresponding transistor Q21, and its other end is connected with a upper transistorized base stage;
Described three grades of transistor level amplifying units comprise transistor unit Q3, base resistance unit R 27;
The signal input part of described transistor unit Q3 is connected with the output of resistance R 11, and the output of described transistor unit Q3 is by load RL ground connection;
One termination power of described base resistance unit R 27; The output of another termination collector resistance R11 of described base resistance unit R 27;
Described transistor unit Q3 comprises a plurality of transistor Q31; Wherein, the emitter of a upper transistor Q31 is connected with the collector electrode of next transistor Q31, and described base resistance unit R 27 comprises a plurality of base resistance R31 one to one with transistor Q31; One end of described base resistance R31 is connected with the base stage of corresponding transistor Q31, and its other end is connected with a upper transistorized base stage.
Described negative feedback unit comprises integrated transporting discharging, input resistance R40, feedback resistance R41, described input resistance R40 is arranged between the incorgruous input of integrated transporting discharging and signal input part, described feedback resistance R41 is arranged between the incorgruous input of integrated transporting discharging and transistor Q3, the input end grounding in the same way of described integrated transporting discharging, described in state integrated transporting discharging output be connected with the input of one-level transistor amplifying unit.
Beneficial effect of the present invention:
1, high pressure power amplifier unit of the present invention adopts three-stage amplifier to carry out signal amplification, and wherein one-level amplifying unit and secondary amplifying unit adopt common collector output, and this circuit form is convenient to High voltage output.In addition, the secondary of high pressure power amplifier unit amplifies the form that transistor in electric unit and three grades of amplifying units and resistance all adopt series connection, has increased the voltage endurance capability of circuit.
2, high pressure power amplifier unit of the present invention is connected with feedback between signal output part and signal input part, thereby effect is to control by the input utmost point controllable high-voltage signal of the height output linearity of output voltage.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of high voltage source of the present invention;
Fig. 2 is the circuit theory diagrams of high pressure power amplifier of the present invention;
Fig. 3 is the physical circuit figure of high pressure power amplifier of the present invention.
Embodiment
Fig. 1 is a high-voltage switch power supply, gives the power supply of high pressure power amplifier.D1 is a rectifier, converts interchange to direct current half-wave, then through R1 and C7, is filtered into 308V direct current and is added on T1 switch transformer.
U1 sends PWM ripple, carrys out the conducting of control switch pipe T2, thereby control T1 input electrode current, changes, and at this moment T1 output stage produces voltage signal, through C1, C2, C5, C6, D2, D3, D4, produces high pressure HV after D5 voltage-multiplying circuit, then feeds back to U1 to reach stable high pressure through R5 and R6 dividing potential drop.
Fig. 2 be one with degenerative anodal power amplifier.Its one-level transistor amplifying unit and secondary transistor amplifying unit are common collector output, and three grades of transistor amplifying units are common emitter output, output voltage U o=-UiR41/R40.But in this figure as to export high pressure necessarily require that Q3 is withstand voltage must very high (several kilovolts), and this to be single tube do not reach.
In order to obtain High voltage output, quote actual Fig. 3 circuit diagram, Q3 is composed in series by n amplifier tube Q31, passes through like this dividing potential drop, the actual voltage that is added in each amplifier tube only has 1/n(HV), n amplifier tube can enter amplification region simultaneously, thereby reach to raise, presses object.And as the Q21 of control end, can not bear high pressure, so when Q21 conducting by R23, R11 dividing potential drop, controls each amplifier tube conducting of Q31 with the centre tap of R31.Q1 amplifies for the first time, is for controlling the signal of the input of Q21.
Further, can high pressure power amplifier unit between signal output part and signal input part, be connected feedback, thereby effect is to control by the input utmost point controllable high-voltage signal of the height output linearity of output voltage.

Claims (1)

1. with a high pressure generator for feedback, comprise high pressure power amplifier unit, high voltage source and negative feedback unit for powering to high pressure power amplifier unit, it is characterized in that:
Described high pressure power amplifier unit comprises one-level transistor amplifying unit, secondary transistor amplifying unit, three grades of transistor amplifying units of cascade;
Described one-level transistor amplifying unit comprises transistor Q1, the base resistance R25 being connected with transistor Q1 base stage, the emitter resistance R22 being connected with transistor Q1 emitter, another termination input signal of described base resistance R25, the other end ground connection of described emitter resistance R22;
Described secondary transistor amplifying unit comprises transistor unit Q2, base resistance unit R 26, emitter resistance R23, collector resistance R11;
The collector electrode of described transistor unit Q2 is connected with collector resistance R11; The base stage of described transistor unit Q2 is connected with the collector electrode of the transistor Q1 of one-level transistor amplifying unit; The emitter of described transistor unit Q2 links with emitter resistance R23, the other end ground connection of described emitter resistance R23;
One termination power of described base resistance unit R 26, the other end of described base resistance unit R 26 is connected with the collector electrode of transistor Q1;
Described transistor unit Q2 comprises a plurality of transistor Q21, and wherein, the emitter of a upper transistor Q21 is connected with the collector electrode of next transistor Q21, and described base resistance unit R 26 comprises a plurality of base resistance R21 one to one with transistor Q21; One end of described base resistance R21 is connected with the base stage of corresponding transistor Q21, and its other end is connected with a upper transistorized base stage;
Described three grades of transistor level amplifying units comprise transistor unit Q3, base resistance unit R 27;
The signal input part of described transistor unit Q3 is connected with the output of resistance R 11, and the output of described transistor unit Q3 is by load RL ground connection;
One termination power of described base resistance unit R 27; The output of another termination collector resistance R11 of described base resistance unit R 27;
Described transistor unit Q3 comprises a plurality of transistor Q31; Wherein, the emitter of a upper transistor Q31 is connected with the collector electrode of next transistor Q31, and described base resistance unit R 27 comprises a plurality of base resistance R31 one to one with transistor Q31; One end of described base resistance R31 is connected with the base stage of corresponding transistor Q31, and its other end is connected with a upper transistorized base stage.
Described negative feedback unit comprises integrated transporting discharging, input resistance R40, feedback resistance R41, described input resistance R40 is arranged between the incorgruous input of integrated transporting discharging and signal input part, described feedback resistance R41 is arranged between the incorgruous input of integrated transporting discharging and transistor Q3, the input end grounding in the same way of described integrated transporting discharging, described in state integrated transporting discharging output be connected with the input of one-level transistor amplifying unit.
CN201320397979.1U 2013-07-05 2013-07-05 High voltage generator with feedback devices Expired - Lifetime CN203434937U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320397979.1U CN203434937U (en) 2013-07-05 2013-07-05 High voltage generator with feedback devices

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Application Number Priority Date Filing Date Title
CN201320397979.1U CN203434937U (en) 2013-07-05 2013-07-05 High voltage generator with feedback devices

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106656067A (en) * 2016-12-30 2017-05-10 陕西海泰电子有限责任公司 High-voltage high-power amplification circuit designed by common operational amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106656067A (en) * 2016-12-30 2017-05-10 陕西海泰电子有限责任公司 High-voltage high-power amplification circuit designed by common operational amplifier
CN106656067B (en) * 2016-12-30 2022-04-15 陕西海泰电子有限责任公司 High-voltage high-power amplifying circuit designed by common operational amplifier

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Granted publication date: 20140212

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