CN203434197U - Multi-primary-color LED eutectic wafer - Google Patents
Multi-primary-color LED eutectic wafer Download PDFInfo
- Publication number
- CN203434197U CN203434197U CN201320520763.XU CN201320520763U CN203434197U CN 203434197 U CN203434197 U CN 203434197U CN 201320520763 U CN201320520763 U CN 201320520763U CN 203434197 U CN203434197 U CN 203434197U
- Authority
- CN
- China
- Prior art keywords
- negative electrode
- positive electrode
- positive
- led
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The utility model relates to a multi-primary-color LED eutectic wafer which is a tower-shaped LED wafer with a reverse-mould inversion structure, from the top part of which, light is emitted. The multi-primary-color LED eutectic wafer includes, from top to bottom, a sapphire or SiC substrate, an N-type conductive layer, a P-type conductive layer, an ITO current diffusion layer, a positive electrode and a negative electrode and an insulating isolation layer between the positive electrode and the negative electrode, wherein the substrate includes any two or more of graphical red, green, blue or multi-color areas. The positive electrode includes any two or more of a corresponding red positive electrode, green positive electrode, blue positive electrode or multi-color positive electrode. The areas share the negative electrode or the positive electrode includes any two or more of a corresponding red negative electrode, green negative electrode, blue electrode or multi-color negative electrode. The areas share the positive electrode.
Description
Technical field
The utility model relates to semiconductor applications, relates in particular to a kind of multi-primary LED eutectic wafer.
Background technology
Traditional semiconductor light emitting wafer, to first generate epitaxial wafer by MOCVD, then after, operation is done electrode, by cutting classification, give downstream application again, the circuit carrier (PCB) that will first do " encapsulation " before downstream application (PACKAGE) and then be fixed on application product gets on to realize relevant electric connection and function.
After wafer, in the electrode fabrication of operation, be mainly to produce while using into downstream by using the electrode of ultrasonic bonding gold thread or aluminum steel.
Before downstream application, to first do " encapsulation ", mainly upper with there being the elargol of conductivity to carry out die bond at rational support (FRAME), safe one of them electrode is installed and is realized electric connection, and then by ultrasonic wire welding machine, another electrode of wafer is welded and is connected to another independent electrically pin of support with gold thread or aluminum steel, finally use transparent epoxy resin wafer, a part for support is reinstated the mould grain cast that was beforehand with optical lens design and is sealed with the gold thread or the aluminum steel one that are connected them again.Have part electrically the pin of support expose, be to be that SMT is connected when supporting the use with other electronic devices or the applying on the PCB of application product of DIP plugin card installation.
Doing in " encapsulation " this procedure, due to must bonding wire, must in light-emitting area, leave the light ejaculation direction that opaque gold or aluminum steel melting welding point have covered part, and can in the hot spot of independent point-source of light, leave " black " heart point of withered sky rather than the uniform hot spot of desirable point-source of light.
In addition, at semiconductor light emitting, apply under the requirement of the market environment that day by day tends to cost performance, the service cost of semiconductor luminescent wafer has been proposed to huge lowering the requirement.
Utility model content
The purpose of this utility model is to provide the multi-primary LED eutectic wafer of a kind of low cost, high light-emitting rate.
In first aspect, the utility model provides a kind of multi-primary LED eutectic wafer, and described multi-primary LED eutectic wafer is the turriform LED wafer of the reverse mould inverted structure of top bright dipping, comprises from top to bottom:
Dielectric isolation layer between sapphire or SiC substrate, N-type conductive layer, P-type conduction layer, ITO current-diffusion layer, positive and negative electrode and positive and negative electrode;
Wherein, on described substrate, comprise in patterned redness, green, blueness or polychrome region any two or more; Described positive electrode comprise in corresponding red positive electrode, green positive electrode, blue positive electrode or polychrome positive electrode any two or more, described each region is negative electrode altogether, or described negative electrode comprise in corresponding red negative electrode, green negative electrode, blue negative electrode or polychrome negative electrode any two or more, described each region is positive electrode altogether.
Preferably, described N-type conductive layer is specially N-type GaN or InGaN or InGaAlP.
Preferably, described P-type conduction layer is specially P type GaN or InGaN or InGaAlP.
Preferably, the pad of described positive and negative electrode is specially AuSn or Cu.
Preferably, the top surface area of described LED eutectic wafer is (45X71)～(108X188) μ m
2, base area is (100X120)～(240X320) μ m
2, the PN junction area that N-type conductive layer and P-type conduction layer form is (80X100)～(196X266) μ m
2, thickness is 60～140 μ m
2.
Preferably, the width of the pad of described positive electrode is 30～80 μ m, and length is 98～196 μ m; The width of the pad of described negative electrode is 45～120 μ m, and length is 98～196 μ m; The width of described dielectric isolation layer is 38～100 μ m; The thickness of the pad of described positive and negative electrode is 3 ± 0.5 μ m.
Preferably, described LED eutectic wafer also comprises current barrier layer CBL, is positioned at P-type conduction layer below.
The multi-primary LED eutectic wafer providing at the utility model is the turriform LED wafer with the reverse mould inverted structure of top bright dipping, and even bright dipping can be provided, and compares traditional LED wafer and improved 10% light extraction efficiency, has also increased rising angle simultaneously.Adopt eutectic electrode simultaneously, thereby can directly do eutectic welding procedure on the PCB of application product, completed the electric connection with other electronic devices and components, thereby save traditional encapsulation process operation, effectively saved equipment processing cost and cost of labor.In addition, also further simplified the optical texture that true color shows on the basis of eutectic, the LED that has realized many primary colours in a wafer shows.
Accompanying drawing explanation
Look up-section-the vertical view of the multi-primary LED eutectic wafer that Fig. 1 provides for the utility model embodiment mono-;
Look up-section-the vertical view of the multi-primary LED eutectic wafer that Fig. 2 provides for the utility model embodiment bis-;
Look up-section-the vertical view of the multi-primary LED eutectic wafer that Fig. 3 provides for the utility model embodiment tri-.
Embodiment
Below in conjunction with drawings and Examples, the utility model is elaborated.
Multi-primary LED eutectic wafer of the present utility model is mainly used in demonstration aspect, mainly comprises LED display, Ultra fine pitch LED display, super-high density LED display, the just luminous TV of LED, the just luminous monitor of LED, LED video wall, LED indication, LED special lighting etc.
Look up-section-the vertical view of the multi-primary LED eutectic wafer that Fig. 1 provides for the utility model embodiment mono-.
As shown in Figure 1, the multi-primary LED eutectic wafer of the present embodiment is the turriform LED wafer of the reverse mould inverted structure of top bright dipping, comprises from top to bottom: sapphire (Al
2o
3) or SiC substrate, N-type conductive layer, P-type conduction layer, ITO current-diffusion layer (not shown), positive and negative electrode and positive and negative electrode between dielectric isolation layer.
Wherein, on described substrate, comprise in patterned redness, green, blueness or polychrome region any two or more; Described positive electrode comprise in corresponding red positive electrode, green positive electrode, blue positive electrode or polychrome positive electrode any two or more, described each region is negative electrode altogether, or described negative electrode comprise in corresponding red negative electrode, green negative electrode, blue negative electrode or polychrome negative electrode any two or more, described each region is positive electrode altogether.
In this example, on substrate, comprise patterned redness and green area.Their are total to negative electrode, between red positive electrode and green positive electrode by dielectric isolation layer.
N-type conductive layer is specially N-type GaN or InGaN or InGaAlP; P-type conduction layer is specially P type GaN or InGaN or InGaAlP; Positive and negative electrode pad is specially AuSn or Cu.
LED eutectic wafer also comprises current barrier layer CBL, is positioned at the below (not shown) of electrode pad top, P-type conduction layer.Adopting the object of current barrier layer CBL is to make do not have or seldom have electric current to pass through below barrier layer, luminous with regard to seldom so herein, therefore can improve amount of light.
In the present embodiment, the top surface area of multi-primary LED eutectic wafer is (45X71)～(108X188) μ m
2, base area is (100X120)～(240X320) μ m
2, the PN junction area that N-type conductive layer and P-type conduction layer form is (80X100)～(196X266) μ m
2, thickness is 60～140 μ m
2.The width of positive electrode pad is 30～80 μ m, and length is 98～196 μ m; The width of negative electrode pad is 45～120 μ m, and length is 98～196 μ m; The width of dielectric isolation layer is 38～100 μ m; The thickness of positive and negative electrode pad is 3 ± 0.5 μ m.Every size all has certain deviation allowed band, specifically in Table 1.
| Describe | Size | Deviation |
| PN junction area (μ m) | 196X266～80X100 | ±35～14 |
| Wafer base area (μ m) | 240X320～100X120 | ±35～14 |
| Wafer top surface area (μ m) | 108X188～45X71 | ±35～14 |
| Wafer thickness (μ m) | 140～60 | ±15 |
| Anodal AuSn or copper pad wide (μ m) | 80～30 | ±15 |
| Anodal AuSn or copper pad long (μ m) | 196～98 | ±35～14 |
| Negative pole AuSn or copper pad wide (μ m) | 120～45 | ±35～14 |
| Negative pole AuSn or copper pad long (μ m) | 196～98 | ±35～14 |
| Insulator separation layer distance (μ m) between pad | 100～38 | ±15 |
| The thickness of AuSn or copper on pad (μ m) | 3 | ±0.5 |
Table 1
The positive and negative electrode pad of the multi-primary LED eutectic wafer that the utility model embodiment provides is all positioned at the below of wafer, therefore can adopt mode and the substrate of direct subsides welderings (Direct Attach, DA) to join.The reverse mould inverted structure at top makes the front at top and side can have higher amount of light.
In conjunction with if following table 2 is to table 4, can learn the main object characteristic of LED eutectic wafer of the present utility model.
| Main Physical Characteristics | Parameter |
| Wavelength (nm) | 450-640 |
| Power (mw) | ≤80 |
Table 2
| Electrical characteristic Ta=25 ℃ | Parameter |
| Wavelength (nm) | 450-470 |
| Power (mw) | ≤80 |
| Forward voltage (V) | 1.85～3.6 |
| Forward current (mA) | 1-20 |
| Peak forward current (mA) | 10-30 |
| Reverse voltage (V) | 5 |
| Reverse current (μ A) | 2 |
| Half band-width (nm) | 20 |
| Working temperature (℃) | -40-+100 |
| Storing temperature (℃) | -40-+100 |
| Static load threshold value (HBM) (V) | 1000 |
| Static load class (MIL-STD-883E) | 2 |
Table 3
Gray scale (MCD)
| M | N | P | Q |
| 3.6-6.4 | 6.4-9.2 | 12.8-18.4 | 25.6-36.8 |
Table 4
The multi-primary LED eutectic wafer that the utility model embodiment mono-provides is the pyramidal structure of the reverse mould upside-down mounting of high brightness top bright dipping, there is low driving voltage, the characteristics such as high light efficiency, even bright dipping can be provided, and compare traditional LED wafer and improved 10% light extraction efficiency, also increased rising angle simultaneously.On the basis of eutectic, also further simplified the optical texture that true color shows, the LED that has realized red and green dual base color in a wafer shows.
Adopt eutectic electrode can directly on the PCB of application product, do eutectic welding procedure simultaneously and complete the electric connection with other electronic devices and components, thereby save traditional encapsulation process operation, effectively saved equipment processing cost and cost of labor.
In addition, the multi-primary LED eutectic wafer that the present embodiment one provides broken through semiconductor light emitting wafer in little spacing (PITCH) application restric-tion below 1.0 millimeters, because can not be limited to again the restriction of the additional volumes that semiconductor light emitting body brings because of rear processing (conventional package), can make the eutectic device of arbitrary dimension.Can realize the application of more wide semiconductor light emitting thus.
Look up-section-the vertical view of the multi-primary LED eutectic wafer that Fig. 2 provides for the utility model embodiment bis-.
As shown in Figure 2, the multi-primary LED eutectic wafer of the present embodiment is the turriform LED wafer of the reverse mould inverted structure of top bright dipping, comprises from top to bottom: sapphire (Al
2o
3) or SiC substrate, N-type conductive layer, P-type conduction layer, ITO current-diffusion layer, positive and negative electrode and positive and negative electrode between dielectric isolation layer.
Wherein, on substrate, comprise patterned redness, green and blue region.Their are total to negative electrode, between red positive electrode, green positive electrode and blue positive electrode respectively by dielectric isolation layer.
The multi-primary LED eutectic wafer that the present embodiment provides, has further simplified the optical texture that true color shows, the LED that has realized red, green and blue three primary colors in a wafer shows.
Look up-section-the vertical view of the multi-primary LED eutectic wafer that Fig. 3 provides for the utility model embodiment tri-.
As shown in Figure 3, the multi-primary LED eutectic wafer of the present embodiment is the turriform LED wafer of the reverse mould inverted structure of top bright dipping, comprises from top to bottom: sapphire (Al
2o
3) or SiC substrate, N-type conductive layer, P-type conduction layer, ITO current-diffusion layer, positive and negative electrode and positive and negative electrode between dielectric isolation layer.
Wherein, on substrate, comprise patterned redness, green, blueness and yellow area.Their are total to negative electrode, between red positive electrode, green positive electrode, blue positive electrode and yellow positive electrode respectively by dielectric isolation layer.
The multi-primary LED eutectic wafer that the present embodiment provides, has further simplified the optical texture that true color shows, has realized LED red, green, blue, yellow many primary colours and show in a wafer.
It should be noted that, in multi-primary LED eutectic wafer, the arrangement mode of primary colours is not limited only to the concrete arrangement mode of showing in the utility model embodiment.
Above-described embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only embodiment of the present utility model; and be not used in and limit protection range of the present utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (7)
1. a multi-primary LED eutectic wafer, is characterized in that, described multi-primary LED eutectic wafer is the turriform LED wafer of the reverse mould inverted structure of top bright dipping, comprises from top to bottom:
Dielectric isolation layer between sapphire or SiC substrate, N-type conductive layer, P-type conduction layer, ITO current-diffusion layer, positive and negative electrode and positive and negative electrode;
Wherein, on described substrate, comprise in patterned redness, green, blueness or polychrome region any two or more; Described positive electrode comprise in corresponding red positive electrode, green positive electrode, blue positive electrode or polychrome positive electrode any two or more, described each region is negative electrode altogether, or described negative electrode comprise in corresponding red negative electrode, green negative electrode, blue negative electrode or polychrome negative electrode any two or more, described each region is positive electrode altogether.
2. LED eutectic wafer according to claim 1, is characterized in that, described N-type conductive layer is specially N-type GaN or InGaN or InGaAlP.
3. LED eutectic wafer according to claim 1, is characterized in that, described P-type conduction layer is specially P type GaN or InGaN or InGaAlP.
4. LED eutectic wafer according to claim 1, is characterized in that, the pad of described positive and negative electrode is specially AuSn or Cu.
5. LED eutectic wafer according to claim 1, is characterized in that, the top surface area of described LED eutectic wafer is (45X71)～(108X188) μ m
2, base area is (100X120)～(240X320) μ m
2, the PN junction area that N-type conductive layer and P-type conduction layer form is (80X100)～(196X266) μ m
2, thickness is 60～140 μ m
2.
6. LED eutectic wafer according to claim 1, is characterized in that, the width of the pad of described positive electrode is 30～80 μ m, and length is 98～196 μ m; The width of the pad of described negative electrode is 45～120 μ m, and length is 98～196 μ m; The width of described dielectric isolation layer is 38～100 μ m; The thickness of the pad of described positive and negative electrode is 3 ± 0.5 μ m.
7. LED eutectic wafer according to claim 1, is characterized in that, described LED eutectic wafer also comprises current barrier layer CBL, is positioned at P-type conduction layer below.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320520763.XU CN203434197U (en) | 2013-08-23 | 2013-08-23 | Multi-primary-color LED eutectic wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320520763.XU CN203434197U (en) | 2013-08-23 | 2013-08-23 | Multi-primary-color LED eutectic wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203434197U true CN203434197U (en) | 2014-02-12 |
Family
ID=50063218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320520763.XU Expired - Lifetime CN203434197U (en) | 2013-08-23 | 2013-08-23 | Multi-primary-color LED eutectic wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203434197U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048637A (en) * | 2019-12-09 | 2020-04-21 | 南京邮电大学 | Multi-color LED epitaxial chip with high-drop-height step structure and preparation method thereof |
-
2013
- 2013-08-23 CN CN201320520763.XU patent/CN203434197U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048637A (en) * | 2019-12-09 | 2020-04-21 | 南京邮电大学 | Multi-color LED epitaxial chip with high-drop-height step structure and preparation method thereof |
| CN111048637B (en) * | 2019-12-09 | 2022-03-18 | 南京邮电大学 | Multi-color LED epitaxial chip with high-drop-height step structure and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11444008B2 (en) | Semiconductor light emitting device and method for manufacturing the same | |
| KR102031967B1 (en) | Light emitting device package | |
| CN104241483B (en) | Luminescent device | |
| US8536591B2 (en) | Light emitting device and lighting system | |
| CN102956782B (en) | Luminescent device and light emitting device packaging piece | |
| US9859331B2 (en) | Preparation method for high-voltage LED device integrated with pattern array | |
| CN102881794A (en) | Nitride semiconductor light-emitting device | |
| CN107689408A (en) | Light emitting diode flip crystal grain and display | |
| CN204289531U (en) | Full-color LED encapsulation structure and LED show module | |
| CN103346218A (en) | LED chip and manufacturing method thereof | |
| CN203521454U (en) | Ohmic contact electrode structure of flip-chip LED chip and flip-chip LED chip | |
| KR20120021443A (en) | Led light module and manufacturing methode of thesame | |
| CN203434197U (en) | Multi-primary-color LED eutectic wafer | |
| US20150123160A1 (en) | Flip chip light-emitting diode package structure | |
| CN105140363B (en) | Power-type visible light communication LED component | |
| CN203434182U (en) | LED eutectic wafer | |
| CN203826424U (en) | LED light source using upside-down mounted LED chip | |
| EP2439794B1 (en) | Light emitting device | |
| CN203521472U (en) | Welding electrode structure of flip-chip LED chip and flip-chip LED chip | |
| CN204538077U (en) | LED chip and use the light-emitting device of this LED chip | |
| CN107516702A (en) | Hinder flip LED chips in a kind of anti-top | |
| CN104733602A (en) | Package Structure Of Light Emitting Diode | |
| CN210866229U (en) | Light-emitting diode | |
| CN110752278B (en) | Light-emitting diode and manufacturing method thereof | |
| CN205014297U (en) | LED lamp five metals support |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160804 Address after: 214100, Jiangsu, Wuxi Province, high road, Binhu District No. 999 (software R & D building) Patentee after: HUANSHI ADVANCED DIGITAL DISPLAY WUXI CO.,LTD. Address before: 100097 room B1F, unit four, building No. three, Far East Road, Haidian District, Beijing Patentee before: Yan Min Patentee before: Cheng Jun Patentee before: Zhou Mingbo |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140212 |