CN203423692U - Compatible average optical power monitoring circuit - Google Patents
Compatible average optical power monitoring circuit Download PDFInfo
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- CN203423692U CN203423692U CN201320452117.4U CN201320452117U CN203423692U CN 203423692 U CN203423692 U CN 203423692U CN 201320452117 U CN201320452117 U CN 201320452117U CN 203423692 U CN203423692 U CN 203423692U
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Abstract
The utility model discloses a compatible average optical power monitoring circuit. The compatible average optical power monitoring circuit is characterized by comprising a main current loop and an auxiliary current loop, wherein the main current loop comprises a normally off-centered photodiode, and the anode of the photodiode is connected with the input end of a trans-impedance amplifier; and the auxiliary current loop comprises a virtual trans-impedance amplifier as the same as the trans-impedance amplifier in terms of structure, electric parameters and generation technologies, a controlled current mirror and a difference amplification module, wherein the input end of the trans-impedance amplifier is connected with the negative input end of the difference amplification module, the input end of the visual trans-impedance amplifier is connected with the positive input end of the difference amplification module; the controlled current mirror has a visual output end connected with the input end of the visual trans-impedance amplifier and a control end connected with the difference amplification output end of the difference amplification module; and the image current end of the controlled current mirror serves as the monitoring current output of the whole device. The auxiliary current loop of the scheme can realize photoelectric current monitoring effects by using a low-voltage circuit and is not affected by the offset voltage of the photodiode itself; and the compatible average optical power monitoring circuit is well compatible with different off-centered photodiodes so as to save cost.
Description
Technical field
The utility model relate to a kind of for fiber optic communication field, realize the supervisory circuit of photodiode average light power.
Background technology
As depicted in figs. 1 and 2, in optical fiber telecommunications system, light pulse signal is converted into current signal through photodiode (photodiode), be input to again trans-impedance amplifier 20(Trans-Imypedance Amplifier, TIA) amplify and be converted into voltage signal, then being transferred to subsequent conditioning circuit and carrying out signal processing.Photodiode is divided into two kinds, and a kind of is PIN pipe, is characterized in that reverse bias voltage is low, can directly by TIA chip 1, provide reverse bias voltage, be encapsulated in TO-CAN inside together with trans-impedance amplifier, but do not there is multiplier effect, so receiving sensitivity index is lower; Another kind is APD pipe (the Avalanche Photo Diode based on avalanche effect, APD), the feature of APD pipe is that reverse bias voltage is high, and cannot provide reverse bias voltage by TIA chip 1, need to provide HVB high voltage bias by the other chip that boosts, be arranged at outside TO-CAN module 2, but there is multiplier effect, so sensitivity index is higher.
In Networks of Fiber Communications management, need to monitor the luminous power in optical fiber transmission network, comprise transmitting and receiving terminal.At receiving terminal, can pass through the average response photoelectric current of monitor photo-diode, calculate reception average light power.Traditional method comes mirror-image monitoring to flow through the photoelectric current of photodiode at current mirror 10 of voltage bias end serial connection of photodiode D, and due to PIN pipe and two kinds of different bias voltages needs of APD pipe, so supervisory circuit is also divided into two kinds of implementation methods.Figure 1 shows that the photoelectric current monitoring circuit that adapts to PIN pipe, Fig. 2 is for adapting to the monitoring circuit of APD pipe.
These two kinds of methods of Fig. 1 and Fig. 2 cannot be general, because current mirror 10 is serially connected in the cathode terminal of photodiode D, directly passes through the photoelectric current of the image feature monitor photo-diode D of current mirror 10.In the photodiode application of PIN type, supervisory circuit can be incorporated in TIA chip 1, but in the application of the photodiode of APD type, due to special high pressure requirement, cannot be integrated into TIA chip; In the application for APD pipe shown in Fig. 2, because APD pipe is biased in high pressure (being generally 40-60V left and right), therefore required current mirror 10 is also special high tension apparatus simultaneously, and cost is higher.
Utility model content
For the supervisory circuit of the above-mentioned existing PIN of being applicable to type and APD type photodiode, cannot realize compatibility, defect that cost is higher, the utility model proposes a kind of compatible type average light power supervisory circuit, its technical scheme is as follows:
An average light power supervisory circuit, it comprises:
One main current loop, comprises the photodiode of a normal bias, and this photodiode anode accesses the input of a trans-impedance amplifier; And
One secondary current loop, comprises a virtual trans-impedance amplifier, a controlled current flow mirror and a poor amplification module;
Wherein, the input of described trans-impedance amplifier is connected in the negative input end of this difference amplification module, and the input of described virtual trans-impedance amplifier is connected in the positive input terminal of this difference amplification module;
This its dummy output terminal of controlled current flow mirror is connected in the input of this virtual trans-impedance amplifier, and the difference that its control end is connected in this difference amplification module is put output, and its image current end is as the monitor current output of whole device;
Described trans-impedance amplifier and its structure of virtual trans-impedance amplifier, electric parameter and generating process are consistent;
Under the control of poor amplification module, common mode input, the input current of this trans-impedance amplifier and virtual trans-impedance amplifier are all consistent.
The preferred person of this programme is as follows:
In preferred embodiment, described trans-impedance amplifier comprises: metal-oxide-semiconductor M0, and its grid connects the anode of described photodiode; One end of its drain electrode contact resistance R1 and resistance R 0; Its source ground; Another termination M0 grid of resistance R 1; Resistance R 0 another termination Vdd;
Described virtual trans-impedance amplifier comprises: metal-oxide-semiconductor M1, one end of its drain electrode contact resistance R2 and resistance R 3; Its source ground; Another termination M0 grid of resistance R 2; Resistance R 3 another termination Vdd;
Described controlled current flow mirror comprises: metal-oxide-semiconductor M2 and M3, and both grids are connected becomes described control end; The drain electrode of M2 is described dummy output terminal, and the drain electrode of M3 is described image current end; The source electrode of M2 and M3 meets Vdd;
Described poor amplification module comprises an error amplifier, the described positive input terminal of its pin and this difference amplification module, negative input end and poor to put output corresponding one by one.
In another kind of preferred embodiment, described trans-impedance amplifier comprises: metal-oxide-semiconductor M0 and M4, and the two drain-source is in series in the same way, and M0 grid connects the anode of described photodiode; One end of M4 drain electrode contact resistance R1 and resistance R 0; M0 source ground; Another termination M0 grid of resistance R 1; Resistance R 0 another termination Vdd;
Described virtual trans-impedance amplifier comprises: metal-oxide-semiconductor M1 and M5, one end of M5 drain electrode contact resistance R2 and resistance R 3; M1 source ground; Another termination M0 grid of resistance R 2; Resistance R 3 another termination Vdd;
Wherein metal-oxide-semiconductor M4 is connected with M5 grid becomes a biasing end is set;
Described controlled current flow mirror comprises: metal-oxide-semiconductor M2, M3 and M6, and wherein M2 is connected with M3 grid and is connected in M2 drain electrode and M6 source electrode again; The grid of M6 becomes described control end; The drain electrode of M6 is described dummy output terminal, and the drain electrode of M3 is described image current end; The source electrode of M2 and M3 meets Vdd;
Described poor amplification module comprises an error amplifier, the described positive input terminal of its pin and this difference amplification module, negative input end and poor to put output corresponding one by one.
Described trans-impedance amplifier and secondary current loop are integrated in a same chip.
The beneficial effect that this programme brings has:
By using a virtual trans-impedance amplifier, and in conjunction with being used for the controlled current flow mirror of analog photoelectricity diode, the monitor current of having shone upon photodiode with the form in secondary current loop, thereby be not subject to the impact of the bias voltage of photodiode own; Realized the favorable compatibility of different bias lighting electric diodes.It is advantageous that, photoelectric current supervisory function bit can be realized with low-voltage circuit in secondary current loop, can be integrated in the product of trans-impedance amplifier IC chip simultaneously, forms general module, has also avoided the sky high cost of high tension apparatus.
Accompanying drawing explanation
Below in conjunction with accompanying drawing embodiment, the utility model is described in further detail:
Fig. 1 is the monitor circuit structure schematic diagram that tradition is applicable to PIN type photodiode D;
Fig. 2 is the monitor current structural representation that tradition is applicable to APD type photodiode D;
Fig. 3 is the module diagram of the utility model embodiment mono-;
Fig. 4 is the module diagram of the utility model embodiment bis-;
Fig. 5 is the module diagram of the utility model embodiment tri-.
Embodiment
Embodiment mono-:
As shown in Figure 3, the structural representation of an embodiment of the utility model.Those skilled in the art can obtain at once specific embodiment after this structure discloses.
A kind of compatible type average light power of the present embodiment supervisory circuit, it has two current circuits altogether, is respectively main current loop and secondary current loop; Wherein, main current loop comprises the photodiode D of a normal bias, can be that APD type can be also PIN type; This photodiode D anode accesses the input 21 of a trans-impedance amplifier 20; Just directly entering trans-impedance amplifier 20 realizes signal-obtaining in its photoelectric current output.Secondary current loop comprises a virtual trans-impedance amplifier 30, controlled current flow mirror 40 and a poor amplification module 50.
The input of trans-impedance amplifier 20 is also connected in the positive input terminal of poor amplification module 50, and the input of virtual trans-impedance amplifier 30 is connected in the negative input end of this difference amplification module 50; Controlled current flow mirror 40 its dummy output terminals 41 are connected in the input 31 of virtual trans-impedance amplifier 30, and the difference that its control end 42 is connected in poor amplification module 50 is put output, and its image current end 43 is as the monitor current output of whole device; Trans-impedance amplifier 20 and virtual trans-impedance amplifier 30 its structures, electric parameter and generating process are consistent, and make the two input and output performance, temperature characterisitic etc. all symmetrical.
Under the control of poor amplification module 50, common mode input, the input current of trans-impedance amplifier 20 and virtual trans-impedance amplifier 30 are all consistent.
Visible, this programme is by being used a virtual trans-impedance amplifier 30, and in conjunction with being used for the controlled current flow mirror 40 of analog photoelectricity diode, with the form in secondary current loop, shone upon the monitor current of photodiode D, this electric current has been realized separatedly with the voltage of photodiode D place main current loop simultaneously, thereby is not subject to the impact of the bias voltage of photodiode D own; By the feedback effect of poor amplification module 50, make image current end 43 obtain synchronizeing with photodiode D the image current changing.This programme has been realized the favorable compatibility of different bias lighting electric diode D.It is advantageous that, photoelectric current supervisory function bit can be realized with low-voltage circuit in secondary current loop, can be integrated in the product of trans-impedance amplifier IC chip simultaneously, forms general module.
Embodiment bis-:
As shown in Figure 4, the circuit diagram of the utility model embodiment bis-.
The primary structure of the present embodiment and embodiment mono-are similar.Trans-impedance amplifier comprises: metal-oxide-semiconductor M0, and its grid connects the anode of photodiode D, and D is the state in normal bias; One end of M0 drain electrode contact resistance R1 and resistance R 0; Its source ground; Another termination M0 grid of resistance R 1; Resistance R 0 another termination Vdd; Virtual trans-impedance amplifier 30 comprises: metal-oxide-semiconductor M1, one end of its drain electrode contact resistance R2 and resistance R 3; Its source ground; Another termination M0 grid of resistance R 2; Resistance R 3 another termination Vdd; Controlled current flow mirror 40 comprises: metal-oxide-semiconductor M2 and M3, and both grids are connected becomes control end 42; The drain electrode of M2 is dummy output terminal 41, and the drain electrode of M3 is image current end 43; The source electrode of M2 and M3 meets Vdd; Poor amplification module 50 comprises an error amplifier, positive input terminal, the negative input end of its pin and this difference amplification module and differ from that to put output corresponding one by one.
Visible, this programme adopts very succinct structure to realize major and minor current circuit, and its trans-impedance amplifier 20 and virtual trans-impedance amplifier 30 be the symmetry of easy implementation structure, technique also, therefore consistency is better, is easy to realizing in trans-impedance amplifier integrated chip.
Embodiment tri-:
As shown in Figure 4, the schematic diagram of the utility model embodiment tri-.The present embodiment basic structure and embodiment mono-are similar.Trans-impedance amplifier 20 comprises metal-oxide-semiconductor M0 and M4, and the two drain-source is in series in the same way, and M0 grid connects the anode of photodiode D; One end of M4 drain electrode contact resistance R1 and resistance R 0; M0 source ground; Another termination M0 grid of resistance R 1; Resistance R 0 another termination Vdd; Virtual trans-impedance amplifier 30 comprises: metal-oxide-semiconductor M1 and M5, one end of M5 drain electrode contact resistance R2 and resistance R 3; M1 source ground; Another termination M0 grid of resistance R 2; Resistance R 3 another termination Vdd; Wherein metal-oxide-semiconductor M4 is connected with M5 grid becomes a biasing end is set, and can conveniently realize the adjustable function of biasing.
Controlled current flow mirror 40 comprises: metal-oxide-semiconductor M2, M3 and M6, and wherein M2 is connected with M3 grid and is connected in M2 drain electrode and M6 source electrode again; The grid of M6 becomes control end 42; The drain electrode of M6 is dummy output terminal 41, and the drain electrode of M3 is image current end 43; The source electrode of M2 and M3 meets Vdd; Poor amplification module 50 is identical with embodiment bis-, comprises an error amplifier, positive input terminal, the negative input end of its pin and this difference amplification module and differ from that to put output corresponding one by one.
The above, it is only the utility model preferred embodiment, therefore can not limit according to this scope that the utility model is implemented, the equivalence of doing according to the utility model the scope of the claims and description changes and modifies, and all should still belong in the scope that the utility model contains.
Claims (4)
1. a compatible type average light power supervisory circuit, is characterized in that: it comprises:
One main current loop, comprises the photodiode of a normal bias, and this photodiode anode accesses the input of a trans-impedance amplifier; And
One secondary current loop, comprises a virtual trans-impedance amplifier, a controlled current flow mirror and a poor amplification module;
Wherein, the input of described trans-impedance amplifier is connected in the negative input end of this difference amplification module, and the input of described virtual trans-impedance amplifier is connected in the positive input terminal of this difference amplification module;
This its dummy output terminal of controlled current flow mirror is connected in the input of this virtual trans-impedance amplifier, and the difference that its control end is connected in this difference amplification module is put output, and its image current end is as the monitor current output of whole device;
Described trans-impedance amplifier and its structure of virtual trans-impedance amplifier, electric parameter and generating process are consistent.
2. a kind of compatible type average light power supervisory circuit according to claim 1, is characterized in that:
Described trans-impedance amplifier comprises: metal-oxide-semiconductor M0, and its grid connects the anode of described photodiode; One end of its drain electrode contact resistance R1 and resistance R 0; Its source ground; Another termination M0 grid of resistance R 1; Resistance R 0 another termination Vdd;
Described virtual trans-impedance amplifier comprises: metal-oxide-semiconductor M1, one end of its drain electrode contact resistance R2 and resistance R 3; Its source ground; Another termination M0 grid of resistance R 2; Resistance R 3 another termination Vdd;
Described controlled current flow mirror comprises: metal-oxide-semiconductor M2 and M3, and both grids are connected becomes described control end; The drain electrode of M2 is described dummy output terminal, and the drain electrode of M3 is described image current end; The source electrode of M2 and M3 meets Vdd;
Described poor amplification module comprises an error amplifier, the described positive input terminal of its pin and this difference amplification module, negative input end and poor to put output corresponding one by one.
3. a kind of compatible type average light power supervisory circuit according to claim 1, is characterized in that: described trans-impedance amplifier comprises: metal-oxide-semiconductor M0 and M4, and the two drain-source is in series in the same way, and M0 grid connects the anode of described photodiode; One end of M4 drain electrode contact resistance R1 and resistance R 0; M0 source ground; Another termination M0 grid of resistance R 1; Resistance R 0 another termination Vdd;
Described virtual trans-impedance amplifier comprises: metal-oxide-semiconductor M1 and M5, one end of M5 drain electrode contact resistance R2 and resistance R 3; M1 source ground; Another termination M0 grid of resistance R 2; Resistance R 3 another termination Vdd;
Wherein metal-oxide-semiconductor M4 is connected with M5 grid becomes a biasing end is set;
Described controlled current flow mirror comprises: metal-oxide-semiconductor M2, M3 and M6, and wherein M2 is connected with M3 grid and is connected in M2 drain electrode and M6 source electrode again; The grid of M6 becomes described control end; The drain electrode of M6 is described dummy output terminal, and the drain electrode of M3 is described image current end; The source electrode of M2 and M3 meets Vdd;
Described poor amplification module comprises an error amplifier, the described positive input terminal of its pin and this difference amplification module, negative input end and poor to put output corresponding one by one.
4. according to a kind of compatible type average light power supervisory circuit described in claim 1 or 2 or 3, it is characterized in that: described trans-impedance amplifier and secondary current loop are integrated in a same chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320452117.4U CN203423692U (en) | 2013-07-26 | 2013-07-26 | Compatible average optical power monitoring circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320452117.4U CN203423692U (en) | 2013-07-26 | 2013-07-26 | Compatible average optical power monitoring circuit |
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| CN203423692U true CN203423692U (en) | 2014-02-05 |
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| CN201320452117.4U Expired - Lifetime CN203423692U (en) | 2013-07-26 | 2013-07-26 | Compatible average optical power monitoring circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104852763A (en) * | 2015-04-08 | 2015-08-19 | 厦门优迅高速芯片有限公司 | Circuit for detecting average optical power at PINA end |
| CN115580348A (en) * | 2022-11-24 | 2023-01-06 | 厦门优迅高速芯片有限公司 | Photocurrent image monitoring circuit |
| CN116388763A (en) * | 2023-04-10 | 2023-07-04 | 苏州领慧立芯科技有限公司 | DAC compatible with voltage/current output |
-
2013
- 2013-07-26 CN CN201320452117.4U patent/CN203423692U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104852763A (en) * | 2015-04-08 | 2015-08-19 | 厦门优迅高速芯片有限公司 | Circuit for detecting average optical power at PINA end |
| CN104852763B (en) * | 2015-04-08 | 2017-07-11 | 厦门优迅高速芯片有限公司 | A kind of circuit that average light power is detected at PINA ends |
| CN115580348A (en) * | 2022-11-24 | 2023-01-06 | 厦门优迅高速芯片有限公司 | Photocurrent image monitoring circuit |
| CN115580348B (en) * | 2022-11-24 | 2023-04-21 | 厦门优迅高速芯片有限公司 | Photocurrent mirror image monitoring circuit |
| CN116388763A (en) * | 2023-04-10 | 2023-07-04 | 苏州领慧立芯科技有限公司 | DAC compatible with voltage/current output |
| CN116388763B (en) * | 2023-04-10 | 2023-12-22 | 苏州领慧立芯科技有限公司 | DAC compatible with voltage/current output |
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Granted publication date: 20140205 |