CN203387513U - Optical network unit optical module for gigabit passive optical network - Google Patents
Optical network unit optical module for gigabit passive optical network Download PDFInfo
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- CN203387513U CN203387513U CN201320382099.7U CN201320382099U CN203387513U CN 203387513 U CN203387513 U CN 203387513U CN 201320382099 U CN201320382099 U CN 201320382099U CN 203387513 U CN203387513 U CN 203387513U
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Abstract
The utility model discloses an optical network unit optical module for a gigabit passive optical network. The optical network unit optical module comprises a laser transmitter, a laser detector with a built-in photodiode, and a three-in-one integrated chip integrating a laser drive circuit, an amplitude limiting amplification circuit and a microprocessor, wherein the three-in-one integrated chip is respectively connected with the laser transmitter and the laser detector. The laser transmitter and the laser detector are respectively connected with optical interfaces arranged in a shell of the optical module through optical fibers. By the adoption of the three-in-one integrated chip, the integration degree of the optical module is improved, the number of peripheral devices of the optical module is reduced, and a larger wiring space is provided for gradual miniaturization of the optical module. Meanwhile, a boost circuit is simplified, and the structure of the optical module is further simplified on the premise of achieving the three functions of transmission, reception and digital diagnosis of the optical module, thereby greatly lowering the production cost of the optical module and making the optical module suitable for mass production.
Description
Technical field
The utility model relates to and belongs to the optical communication technique field, is specifically related to light node optical module for a kind of gigabit passive optical network.
Background technology
Along with the develop rapidly of the Internet, the demand rapid growth of people to Internet resources, the diversification of the service that the Internet is provided trend, and the realization of everything all needs optical-fiber network at a high speed as carrier.The construction of high-speed light network has at present become will of the state, and the integration of three networks becomes trend of the times, and it provides brand-new interaction entertainment mode and adventure in daily life for the user, for enterprise, trade company provide comprehensive service.
Along with Fiber to the home, the large scale deployment of community and ripe all the more optical-fiber network construction, each large equipment business, the raw material business, the device business optical communication industry of trying to win the champion, aggravated FTTH(Fiber To The Home, Fiber to the home) the technical competition of commercialization of industrial chain.Core component as optical fiber telecommunications system---optical module to its massive demand, also makes the cost control of optical module seem particularly important in the research and development production process of whole optical module in the our times scope.
ONU(Optical Network Unit with digital diagnosis function, optical node) optical module is the main product on market in recent years, and its internal hardware design adopts the chip that the transmits and receives one low-cost monolithic machine of arranging in pairs or groups to realize the intelligent monitoring diagnostic function.Current this scheme reaches its maturity, and between each module manufacturer, the properties of product quality is very approaching, and price war grows in intensity.This multi-chip scheme has been introduced more pin wiring, has increased the signal number of plies of pcb board, has increased cost, also for wiring, brings difficulty.
While is designed because universal single-chip microcomputer not aims at optical module, and the software and hardware that itself and emission receive between the one chip is engaged in while tackling the different application environment problems such as misoperation often occur, for magnanimity from now on, applies and hides some dangers for.
Based on above reason, how can realize the support of optical module to digital diagnosis function with extremely low hardware cost, significantly reducing the demand of optical module cost to meet telecom operators, communication equipment business, is one of vast optical module developer subject matter urgently to be resolved hurrily.
The utility model content
The purpose of this utility model is to provide light node optical module for a kind of gigabit passive optical network, and it can be when meeting the basic function that optical module requires to possess, and the simplification circuit structure, significantly reduce hardware cost.
According to embodiment of the present utility model, a kind of light node optical module (hereinafter to be referred as GPON ONU optical module) for gigabit passive optical network is provided, comprise the laser detector of generating laser and built in light electric diode, and
Integrated laser drive circuit, amplitude limiting amplifier circuit and microprocessor are in the three-in-one integrated chip of one, and described three-in-one integrated chip is connected with described laser detector with described generating laser respectively;
Described generating laser is connected with the optical interface arranged on the optical module housing by optical fiber respectively with described laser detector.
Preferably, the photodiode in described laser detector is avalanche photodide; And
Described optical module inside also is provided with the booster circuit that high pressure is provided for described avalanche photodide; The input of described booster circuit is connected with the supply voltage of described optical module, and its output is connected with the avalanche photodide in described laser detector.
Wherein, described booster circuit is the switch DC booster circuit be comprised of switch, inductance, diode and electric capacity, and the switch in described switch DC booster circuit is metal-oxide half field effect transistor; Wherein,
The source electrode of described metal-oxide half field effect transistor is connected with described avalanche photodide, and its grid is connected with described three-in-one integrated chip, its grounded drain.
Preferably, the diode in described switch DC booster circuit is rectifier diode.
Further, described optical module also comprises:
Mirror current source, its input is connected with the photodiode in described laser detector, and its output is connected with the data-interface of described three-in-one integrated chip.
Further, described optical module also comprises: be arranged at the memory of described three-in-one set chip exterior, described memory is connected with described three-in-one set chip bus.
Wherein, described memory is EEPROM, passes through I
2the C bus is connected with described three-in-one set chip.
The optical interface arranged on described optical module housing is plug-type interface or tail fiber type interface.
Wherein, described tail fiber type interface is any one in SC interface, ST interface or FC interface.
Preferably, described optical module adopts the packing forms of SFF or SFP to be encapsulated.
As shown from the above technical solution, the GPON ONU optical module in the utility model, its three-in-one chip design solution integration degree is high, and peripheral components is used few, for the optical module of miniaturization day by day provides more wiring space.The utility model is to providing the booster circuit of high pressure to be simplified for avalanche photodide simultaneously, thereby under the prerequisite of the emission that meets GPON ONU optical module, reception, numerical diagnostic three large functional requirements, further simplified the structure of GPON ONU optical module, thereby the production cost of GPON ONU optical module is reduced, be beneficial to batch production.
The accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described.Apparently, the accompanying drawing in below describing is only embodiment more of the present utility model, for those of ordinary skills, can also obtain according to these accompanying drawing illustrated embodiments other embodiment and accompanying drawing thereof.
Fig. 1 shows the circuit diagram of traditional GPON ONU optical module;
Fig. 2 shows the circuit diagram of GPON ONU optical module in the utility model.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, referring to accompanying drawing and enumerate preferred embodiment, the utility model is further described.Yet, it should be noted that, many details of listing in specification are only in order to make the reader, to one or more aspects of the present utility model, a thorough understanding be arranged, even if do not have these specific details also can realize these aspects of the present utility model.
In the circuit design of the optical node optical module (GPON ONU optical module) of traditional gigabit passive optical network, be all the closed loop design scheme that adopts dual chip usually.Fig. 1 shows the circuit diagram of traditional GPON ONU optical module.Referring to Fig. 1, dual chip refers to be integrated with the transceiver chip U1 of laser driver and limiting amplifier.Wherein, transceiver chip U1, the universal single-chip microprocessor MCU with certain data storage capacity, booster circuit 101 and laser BOSA(integrated laser reflector 102 and photodetector 103) form close loop control circuit, realize the support of optical module to digital diagnosis function.
In close loop control circuit shown in Fig. 1, at transmitting terminal, be integrated with light-emitting diode and detection diode backlight in generating laser 102 in laser BOSA, transceiver chip U1 is by generating laser 102 input bias current Ibias and modulated current Imod, carrying out the lumination of light emitting diode in driving laser reflector 102, to realize that the data that the user is sent are converted to light signal and deliver to local side by optical fiber transmission.Detection diode backlight in generating laser 102 is electrically connected to transceiver chip U1.Detection diode backlight produces corresponding back facet current Impd according to the luminous intensity of light-emitting diode, and back facet current Impd is sent to transceiver chip U1, transceiver chip U1 regulates bias current Ibias according to back facet current Impd, so that the reference current that the bias current Ibias detected can set in advance with its inside is suitable, thereby provide constant optical output power.
At receiving terminal, for meeting GPON ONU optical module high speed, highly sensitive demand, the reception diode in photodetector 103 adopts avalanche-type photodiode (APD) more.Booster circuit 101 is connected with supply voltage, and the high pressure of the 35V～55V that becomes APD to need for general+3.3V voltage transitions is to guarantee the APD normal operation.Wherein, booster circuit 101 comprises boost chip and voltage doubling rectifing circuit.Because the chip volume that boosts is less, dispel the heat poor, thereby restriction is boosted, chip can not bear larger operating current, therefore needs voltage doubling rectifing circuit to carry out rectification two multiplication of voltages to the AC signal of its output.At the output of voltage, also need output voltage is carried out to voltage acquisition simultaneously, controlled gathering voltage by single-chip microcomputer, to guarantee the stable of output voltage.
Aspect the received optical power monitoring, the photelectric receiver APD photodiode inner by it receives the light signal through the optical fiber input, and then produce corresponding with it response current Ipd, produce the image current Ipd ' of this electric current by mirror current source, image current Ipd ' transfers to single-chip microcomputer through the received current Acquisition Circuit, realizes the monitoring calibration to average received power under continuous mode.
Dual chip closed loop circuit design as shown in Figure 1 can clearly be seen that: traditional GPON ONU optical module circuit structure complexity, need to consider the cooperation of software and hardware between single-chip microcomputer and transceiver chip, booster circuit 101 wirings, therefore make that in GPON ONU optical module, not only PCB layout is complicated, hardware cost is high, and available single-chip microcomputer model is less, the poor stability of module work.
In order to solve the existing above-mentioned defect of traditional GPON ONU optical module circuit, the present embodiment has proposed a kind of GPON ONU optical module circuit that adopts three-in-one integrated chip design, the purpose that simplify circuit design to reach, reduces hardware cost.Elaborate assembling structure and the operation principle thereof of GPON ONU optical module circuit in the utility model below by specific embodiment.
Fig. 2 shows the circuit diagram of GPON ONU optical module in the utility model.As shown in Figure 2, gigabit passive optical network comprises that by light node optical module the laser detector 202 of generating laser 201 and built in light electric diode and integrated laser drive circuit, amplitude limiting amplifier circuit and microprocessor are in the three-in-one integrated chip 203 of one.Wherein,
Three-in-one integrated chip 203 is connected with laser detector 202 with generating laser 201 respectively; Generating laser 201 is connected with the optical interface arranged on the optical module housing by optical fiber respectively with laser detector 202.Preferably, the generating laser described in the present embodiment 201 adopts DFB type generating laser 201.
In the present embodiment, the photodiode in laser detector 202 is avalanche photodide, and correspondingly, optical module inside also is provided with the booster circuit 204 that high pressure is provided for avalanche photodide.The input of booster circuit 204 is connected with the supply voltage of optical module, and its output is connected with the avalanche photodide in laser detector 202, is used to avalanche photodide that the high pressure that can work is provided.
Preferably, adopt the switch DC booster circuit 204 formed by switch, inductance L 1, diode D1 and capacitor C 1 in the present embodiment.In switch DC booster circuit 204, switch is metal-oxide half field effect transistor (MOSFET), and diode D1 is rectifier diode.Wherein, the source electrode of metal-oxide half field effect transistor (S) is connected with avalanche photodide, and its grid (G) is connected with three-in-one integrated chip 203, its drain electrode (D) ground connection.Known technology because switch DC booster circuit 204 is the art no longer is described in detail its operation principle herein.With the booster circuit in existing GPON ONU optical module, compare, the booster circuit in the present embodiment is simplified more.
Further, the optical module in the utility model also comprises:
Mirror current source 205, its input is connected with the avalanche photodide in laser detector 202, and its output is connected with the data-interface of three-in-one integrated chip 203 by RSSI.Mirror current source 205 is for the response current Ipd produced according to the avalanche photodide image current Ipd ' of electric current that meets with a response, and image current Ipd ' is sent to three-in-one integrated chip 203.
Further, the optical module in the present embodiment also comprises: be arranged at the eeprom memory 206 of three-in-one set chip exterior, eeprom memory 206 passes through I
2the C bus is connected with three-in-one set chip, in the present embodiment, and I
2the C bus comprises data wire SDA and two bidirectional signal lines of clock line SCL.
Below the operation principle of GPON ONU optical module in the present embodiment is described in detail.
In the utility model, GPON ONU optical module is integrated in laser drive circuit, amplitude limiting amplifier circuit and Micro-processor MCV kernel in a three-in-one integrated chip 203, coordinate laser detector 202 and generating laser 201, adopt open loop control mode to set up the optical module circuit.In three-in-one integrated chip 203, microcontroller is communicated by letter with laser drive circuit, amplitude limiting amplifier circuit, to realize control and the configuration to drive circuit for laser and amplitude limiting amplifier circuit, read the monitoring parameter needed, for realizing the monitoring function of optical module simultaneously.In addition, all right further integrated ADC, DAC, principal and subordinate I in three-in-one integrated chip 203
2the functional units such as C controller, temperature sensor, voltage reference source and oscillator, with the design of peripheral circuits.
At transmitting terminal, when the user need to send data, at first the laser driver in three-in-one integrated chip 203 produces bias current Ibias, acts on the light-emitting diode in generating laser 201, drives lumination of light emitting diode.Meanwhile, the data-signal that the user sends is input to laser driver, and then generation modulated current Imod is modulated on bias current Ibias, change the luminous power of laser by the conducting degree of controlling light-emitting diode in generating laser 201, and then data shift signal is become to light signal, be sent to local side by optical fiber cable.
In the utility model, the variation that utilizes method that luminous power compensation is tabled look-up to come compensating light power to vary with temperature and produce, that is: according to the characteristics of DFB generating laser 201, the characteristics that increase along with the rising threshold current of temperature, threshold current is compensated, thereby make luminous power can keep constant under the environment of high low temperature.Thereby avoided the use of automatic power control circuit APC LOOP, simplified circuit structure.Moreover, adopt the design of single-chip, when selecting generating laser 201, can adopt only to be packaged with light-emitting diode and to carry out circuit design without the laser component of detection diode backlight, thereby can reach the purpose of further reduction hardware cost.
Adopt three-in-one integrated chip 203, the MCU of chip internal can directly control laser drive circuit, with MCU and laser driver in the traditional double chip, passes through Simulation with I
2the method that C interface communicates is compared, and the utlity model has the characteristics of control response more fast.Simultaneously MCU also can control laser drive circuit timely according to the different situations of temperature, supply power voltage and the laser bias current of the transceiver module of real-time monitoring, to guarantee the failure-free operation of optical module.
Aspect the reception of light signal, laser detector 202 avalanche photodide inner by it receives the light signal of input by optical fiber, and after converting light signal to the signal of telecommunication, by its differential data output OUT ,-OUT exports.
Aspect the received optical power monitoring, laser detector 202 avalanche photodide inner by it receives the light signal of inputting by optical fiber, and then produces corresponding with it response current Ipd.Mirror current source 205 goes out image current Ipd ' according to this current mirror, and image current Ipd ' is transferred in three-in-one integrated chip 203 by RSSI, and then built-in analog to digital converter ADC converts numeral to offer MCU by three-in-one integrated chip 203, thereby realize the monitoring calibration to average received power under continuous mode.
At the jumbo memory of the periphery configure of three-in-one integrated chip 203, the present embodiment be take eeprom memory and is described as example.Wherein, the capacity of eeprom memory 206 can specifically be selected as required.Preferably, in the present embodiment, eeprom memory 206 adopts I
2the mode of C bus and three-in-one integrated chip 203 communicate.In eeprom memory 206 internal separation, program storage area and data storage area are arranged, the Micro-processor MCV in three-in-one integrated chip 203 passes through I
2the C bus is from uploading in eeprom memory 206 and transmitting data, by a three-in-one integrated chip 203 and an eeprom chip, realized the repertoires such as emission, reception, numerical diagnostic of optical module, and circuit structure is very simple.
The gigabit passive optical network of the present embodiment adopts plug-type interface or tail fiber type interface by light node optical module, the external fiber cable is inserted in the plug-type or tail fiber type optical interface of optical module, just can realize being connected of optical module and external fiber cable.Wherein, the tail fiber type interface can adopt any one in SC interface, ST interface or FC interface.Particularly, the gigabit passive optical network in the utility model can adopt the packing forms of SFF or SFP by light node optical module.
From above technology, the three-in-one chip design solution integration of the GPON ONU optical module degree that the present embodiment proposes is high, and peripheral components is used few, for the optical module of miniaturization day by day provides more wiring space.The utility model is simplified the booster circuit 204 that high pressure is provided for avalanche photodide simultaneously, thereby under the prerequisite of the emission that meets GPON ONU optical module, reception, numerical diagnostic three large functional requirements, further simplified the structure of GPON ONU optical module, thereby the production cost of GPON ONU optical module is reduced, be beneficial to production in enormous quantities.
The foregoing is only preferred embodiment of the present utility model, not for limiting protection range of the present utility model.All within spirit of the present utility model and principle, any modification of doing, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (10)
1. light node optical module for a gigabit passive optical network, comprise and it is characterized in that the laser detector of generating laser and built in light electric diode, also comprises:
Integrated laser drive circuit, amplitude limiting amplifier circuit and microprocessor are in the three-in-one integrated chip of one, and described three-in-one integrated chip is connected with described laser detector with described generating laser respectively;
Described generating laser is connected with the optical interface arranged on the optical module housing by optical fiber respectively with described laser detector.
2. optical node optical module according to claim 1, is characterized in that, the photodiode in described laser detector is avalanche photodide; And
Described optical module inside also is provided with the booster circuit that high pressure is provided for described avalanche photodide; The input of described booster circuit is connected with the supply voltage of described optical module, and its output is connected with the avalanche photodide in described laser detector.
3. optical node optical module according to claim 2, is characterized in that, described booster circuit is the switch DC booster circuit be comprised of switch, inductance, diode and electric capacity, and the switch in described switch DC booster circuit is metal-oxide half field effect transistor; Wherein,
The source electrode of described metal-oxide half field effect transistor is connected with described avalanche photodide, and its grid is connected with described three-in-one integrated chip, its grounded drain.
4. optical node optical module according to claim 3, is characterized in that, the diode in described switch DC booster circuit is rectifier diode.
5. optical node optical module according to claim 1 and 2, is characterized in that, also comprises:
Mirror current source, its input is connected with the photodiode in described laser detector, and its output is connected with the data-interface of described three-in-one integrated chip.
6. optical node optical module according to claim 5, is characterized in that, also comprises: be arranged at the memory of described three-in-one set chip exterior, described memory is connected with described three-in-one set chip bus.
7. optical node optical module according to claim 6, is characterized in that, described memory is EEPROM, passes through I
2the C bus is connected with described three-in-one set chip.
8. optical node optical module according to claim 1, is characterized in that, the optical interface arranged on described optical module housing is plug-type interface or tail fiber type interface.
9. optical node optical module according to claim 8, is characterized in that, described tail fiber type interface is any one in SC interface, ST interface or FC interface.
10. optical node optical module according to claim 1, is characterized in that, described optical module adopts the packing forms of SFF or SFP to be encapsulated.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320382099.7U CN203387513U (en) | 2013-06-28 | 2013-06-28 | Optical network unit optical module for gigabit passive optical network |
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| CN201320382099.7U CN203387513U (en) | 2013-06-28 | 2013-06-28 | Optical network unit optical module for gigabit passive optical network |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111954103A (en) * | 2020-08-01 | 2020-11-17 | 武汉金信诺光电子有限公司 | Accurate controllable OAM low frequency signal loading circuit |
-
2013
- 2013-06-28 CN CN201320382099.7U patent/CN203387513U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111954103A (en) * | 2020-08-01 | 2020-11-17 | 武汉金信诺光电子有限公司 | Accurate controllable OAM low frequency signal loading circuit |
| CN111954103B (en) * | 2020-08-01 | 2022-08-30 | 武汉金信诺光电子有限公司 | Accurate controllable OAM low frequency signal loading circuit |
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Granted publication date: 20140108 |