CN203368755U - Impact resistant silicon substrate MEMS microphone - Google Patents
Impact resistant silicon substrate MEMS microphone Download PDFInfo
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- CN203368755U CN203368755U CN 201320451499 CN201320451499U CN203368755U CN 203368755 U CN203368755 U CN 203368755U CN 201320451499 CN201320451499 CN 201320451499 CN 201320451499 U CN201320451499 U CN 201320451499U CN 203368755 U CN203368755 U CN 203368755U
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- vibrating diaphragm
- mems microphone
- silica
- perforation backboard
- limiting mechanism
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Abstract
The utility model provides an impact resistant silicon substrate MEMS microphone. The microphone comprises a silicon substrate in which a dorsal pore is formed; a diaphragm supported on the silicon substrate and arranged above the dorsal pore in the silicon substrate; a perforated backboard arranged above the diaphragm; an air gap formed between the diaphragm and the perforated backboard; and an amplitude limiting mechanism formed in the dorsal pore of the silicon substrate, supporting on the side wall of the dorsal pore, and having a predetermined interval with the diaphragm. The microphone limits the vibration amplitude of the diaphragm in the microphone via the amplitude limiting mechanism, thereby preventing the diaphragm from being damaged under the external impact.
Description
Technical field
The utility model relates to the microphone techniques field, specifically, relates to the silica-based MEMS microphone of a kind of shock resistance.
Background technology
The MEMS microphone, particularly silica-based MEMS microphone, researched and developed for many years.Silica-based MEMS microphone is potential advantages aspect miniaturization, performance, reliability, environmental durability, cost and mass production capabilities and in can being widely used for many application, such as mobile phone, panel computer, camera, hearing aids, intelligent toy and monitoring arrangement due to it.
In general, silica-based MEMS microphone comprises vibrating diaphragm and the perforation backboard be formed on silicon base, and vibrating diaphragm and perforation backboard are formed with air gap between it, and form the variable air gap capacitor.In common silica-based MEMS microphone, vibrating diaphragm, below the perforation backboard, and exposes to outside by the dorsal pore be formed in silicon base.Fig. 1 is cutaway view, shows the structure of existing a kind of silica-based MEMS microphone.As shown in Figure 1, existing a kind of silica-based MEMS microphone 100 comprises silicon base 10, vibrating diaphragm 40, separator 50 and perforation backboard 60, wherein, between silicon base 10 and vibrating diaphragm 40, can also have insulating barrier 20; Be formed with dorsal pore 11 in silicon base 10, in order to vibrating diaphragm 40 is exposed; Be formed with perforation 61 in perforation backboard 60, in order to make air-flow can not make its vibration-generating by perforation backboard 60 and by perforation backboard 60 time; Being formed with 51， air gap, air gap 51 between backboard 60 in vibrating diaphragm 40 and perforation is that cavity in being formed on separator 50 forms.Vibrating diaphragm 40 and perforation backboard 60 form a capacitor as two battery lead plates, and when vibrating diaphragm 40 vibrates under sound wave effect, the electric capacity of this capacitor changes thereupon, thereby acoustic signals can be converted into to the signal of telecommunication, to realize the detection to acoustic signals.
The problem that above-mentioned silica-based MEMS microphone exists is, when this silica-based MEMS microphone falls or when very strong acoustic signals is arranged by the silicon base dorsal pore, is easy to make fragile vibrating diaphragm to be damaged too greatly because of Oscillation Amplitude.
The utility model content
The utility model is made in order to solve above-mentioned problems of the prior art, and its purpose is to provide a kind of shock resistance silica-based MEMS microphone, thereby prevents that by the Oscillation Amplitude that limits the vibrating diaphragm in this microphone it is damaged under externally impacting.
To achieve these goals, the utility model provides a kind of shock resistance silica-based MEMS microphone, and it comprises: silicon base is formed with dorsal pore in this silicon base; Vibrating diaphragm, this vibrating diaphragm is supported on described silicon base and is arranged on the top of the dorsal pore in described silicon base; The perforation backboard, this perforation backboard is arranged on the top of described vibrating diaphragm; ，Gai air gap, air gap is formed between described vibrating diaphragm and described perforation backboard; And amplitude limiting mechanism, this amplitude limiting mechanism is formed in the dorsal pore of described silicon base, and is supported on the sidewall of described dorsal pore, between this amplitude limiting mechanism and described vibrating diaphragm, is formed with predetermined space.
Preferably, described vibrating diaphragm can be formed by polysilicon.
Preferably, described perforation backboard can be formed by polysilicon, or described perforation backboard can be formed by the passivation layer with embedded metal layer, and wherein said metal level is as the electrode of described perforation backboard.
In addition, preferably, the silica-based MEMS microphone of described shock resistance can also comprise prodger, and this prodger is outstanding from the lower surface of the described perforation backboard relative with described vibrating diaphragm.
Moreover preferably, described amplitude limiting mechanism can form one or more in in-line, river font, cross, groined type and Y-shaped.
From top description with put into practice, when falling or strong sound wave when passing through produced external impact and making vibrating diaphragm generation violent oscillatory motion, amplitude limiting mechanism in the silicon base dorsal pore can prevent that vibrating diaphragm is too large towards the amplitude that departs from of direction away from the perforation backboard, it is too large that perforation backboard itself (comprising the prodger that is formed on its lower surface) can limit the amplitude that vibrating diaphragm departs from towards the direction near the backboard of boring a hole, therefore, the silica-based MEMS microphone of shock resistance described in the utility model can prevent in use due to fall or strong sound wave by the damage of the vibrating diaphragm that causes.
The accompanying drawing explanation
Fig. 1 is cutaway view, shows the structure of existing a kind of silica-based MEMS microphone;
Fig. 2 is cutaway view, shows the structure of a described silica-based MEMS microphone of embodiment of the present utility model;
Fig. 3 is perspective view, shows the amplitude limiting mechanism in the silicon base dorsal pore of a described silica-based MEMS microphone of embodiment of the present utility model; And
Fig. 4 a-4d is cutaway view, shows the manufacture method of a described silica-based MEMS microphone of embodiment of the present utility model.Wherein, in the accompanying drawings,
100: existing silica-based MEMS microphone;
200: the described silica-based MEMS microphone of an embodiment of the present utility model;
10: substrate; 11: dorsal pore;
20: insulating barrier; 30: the first dielectric silicon oxide layers;
40: vibrating diaphragm;
50: separator; 51: air gap;
60: the perforation backboard; 61: perforation; 62: prodger;
70: amplitude limiting mechanism.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in detail.
In the following description, only by the mode of explanation, some example embodiment of the present utility model has been described.Undoubtedly, those of ordinary skill in the art can recognize, in the situation that do not depart from spirit and scope of the present utility model, can to described embodiment, be revised by various mode.Therefore, accompanying drawing is illustrative with being described in essence, rather than for limiting the protection range of claim.In this manual, when being known as when another layer or zone " on " or " under " in a layer or zone, it can be " directly " can be also " indirectly " on this another layer or zone or under, can have one or more intermediate layers between the two.Determiner " first ", " second " do not mean sequence number or the importance of concrete element or structure, just for distinguishing two similar elements or structure.In addition, in this manual, identical Reference numeral means same or analogous part.
Fig. 2 is schematic diagram, shows the structure of a described silica-based MEMS microphone of embodiment of the present utility model.As shown in Figure 2, the described silica-based MEMS microphone 200 of an embodiment of the present utility model comprises silicon base 10, vibrating diaphragm 40, perforation backboard 60, air gap 51 and amplitude limiting mechanism 70.
Be formed with dorsal pore 11 in silicon base 10.
Vibrating diaphragm 40 is supported on silicon base 10 and is arranged on the top of the dorsal pore 11 in silicon base 10.Vibrating diaphragm 40 can be formed by polysilicon.In addition, can be formed with for example Si oxide insulating barrier 20 between silicon base 10 and vibrating diaphragm 40.Moreover, between silicon base 10 and vibrating diaphragm 40, be formed with for determining the first dielectric silicon oxide layer 30 of the predetermined space between vibrating diaphragm 40 and amplitude limiting mechanism 70.The first dielectric silicon oxide layer 30 can pass through formation such as plasma enhanced chemical vapor deposition (PECVD) oxide, phosphorosilicate glass (PSG) or boron-phosphorosilicate glass (BPSG).
Fig. 3 is perspective view, shows the amplitude limiting mechanism in the silicon base dorsal pore of a described silica-based MEMS microphone of embodiment of the present utility model.In the example shown in Fig. 3, amplitude limiting mechanism 70 is the rood beam structure, between this rood beam structure and vibrating diaphragm 40, is formed with predetermined interval.Yet the number of amplitude limiting mechanism 70 and form are not done special restriction, amplitude limiting mechanism 70 can form one or more in in-line, river font, cross, groined type and Y-shaped, and can be integrally formed with silicon base dorsal pore 11.
In addition, the silica-based MEMS microphone of the shock resistance in the present embodiment can also comprise prodger 62, and prodger 62 is outstanding from the lower surface of the perforation backboard 60 relative with vibrating diaphragm 40.Prodger 62 occurs bonding at manufacture and the use procedure middle punch backboard 60 of the described shock resistance MEMS of the present embodiment microphone with vibrating diaphragm 40 for preventing.
Although not shown, above-mentioned silica-based MEMS microphone also comprises pin configuration, for drawing as vibrating diaphragm and the perforation backboard of electrode, it is electrically connected to signal of telecommunication probe unit.The concrete setting of described pin configuration can be referring to patent application No.PCT/CN2010/075514, and its related content is incorporated herein by reference.
In the use procedure of silica-based MEMS microphone described in the utility model, when owing to falling or strong sound wave while by the external impact produced, making vibrating diaphragm 40 that violent oscillatory motion occur, amplitude limiting mechanism 70 in silicon base dorsal pore 11 can prevent that vibrating diaphragm 40 is too large towards the amplitude that departs from of direction away from perforation backboard 60, it is too large that perforation backboard 60 itself (comprising the prodger 62 that is formed on its lower surface) can limit the amplitude that vibrating diaphragm 40 departs from towards the direction near perforation backboard 60, therefore, the silica-based MEMS microphone of shock resistance described in the utility model can prevent in use due to fall or strong sound wave by the damage of the vibrating diaphragm that causes.
The manufacture method of a silica-based MEMS microphone of the described shock resistance of embodiment of the present utility model is described below in conjunction with Fig. 4 a-4d.
At first, as shown in Fig. 4 a, deposition the first dielectric oxide layer 30 on silicon base 10 then forms the vibrating diaphragm 40 that comprises the first polysilicon on the first dielectric oxide layer 30.Here, before deposition the first dielectric oxide layer 30, can on silicon base 10, form Si oxide insulating barrier 20.Can control the thickness of the first dielectric oxide layer 30, in order to make, between the vibrating diaphragm 40 that forms later and amplitude limiting mechanism 70, there is predetermined interval.The first dielectric silicon oxide layer 30 can be formed by such as plasma enhanced chemical vapor deposition (PECVD) oxide, phosphorosilicate glass (PSG) or boron-phosphorosilicate glass (BPSG) etc.
Then, as shown in Figure 4 b, deposition the second dielectric oxide layer (being separator 50) on vibrating diaphragm 40, the second dielectric silicon oxide layer can be formed by such as plasma enhanced chemical vapor deposition (PECVD) oxide, phosphorosilicate glass (PSG) or boron-phosphorosilicate glass (BPSG) etc.Then, form perforation backboard 60 on described the second dielectric oxide layer.Here, before forming perforation backboard 60, can in described the second dielectric oxide layer, form prodger 62.Perforation backboard 60 can form by the second polysilicon.Perhaps, perforation backboard 60 can for example, be formed by the passivation layer with embedded metal layer (silicon nitride layer), and wherein said metal level is as the electrode of described perforation backboard.Prodger 62 can for example, be formed by passivation layer (silicon nitride layer).The concrete formation method of perforation backboard 60 and prodger 62 can be referring to patent application No.PCT/CN2010/075514, and its related content is incorporated herein by reference.
Afterwards, as shown in Fig. 4 c, integrally formed dorsal pore 11 and amplitude limiting mechanism 70 in the silicon base 10 below vibrating diaphragm 40.Can utilize controlled deep trouth reactive ion etching or wet etching to form dorsal pore 11 and amplitude limiting mechanism 70 in silicon base 10 simultaneously.
Finally, utilize the first dielectric oxide layer 30(that the method for wet etching is removed between vibrating diaphragm 40 and amplitude limiting mechanism 70 to comprise Si oxide insulating barrier 20), remove the second dielectric oxide layer 50 between vibrating diaphragm 40 and perforation backboard 60 simultaneously, thereby form the predetermined space between vibrating diaphragm 40 and amplitude limiting mechanism 70, and form the air gap 51 between vibrating diaphragm 40 and perforation backboard 60.
Like this, just formed a silica-based MEMS microphone 200 of the described protecting against shock of embodiment of the present utility model.
Should be noted that those of skill in the art can carry out various improvement, distortion and combination on the basis of above-described embodiment, and these improvement, distortion and combination are also all within protection range of the present utility model.Should be understood that above-mentioned specific descriptions just are used for illustrating the utility model, protection range of the present utility model is limited by appended claims and equivalent thereof.
Claims (6)
1. the silica-based MEMS microphone of shock resistance, is characterized in that, comprising:
Silicon base is formed with dorsal pore in this silicon base;
Vibrating diaphragm, this vibrating diaphragm is supported on described silicon base and is arranged on the top of the dorsal pore in described silicon base;
The perforation backboard, this perforation backboard is arranged on the top of described vibrating diaphragm;
，Gai air gap, air gap is formed between described vibrating diaphragm and described perforation backboard; And
Amplitude limiting mechanism, this amplitude limiting mechanism is formed in the dorsal pore of described silicon base, and is supported on the sidewall of described dorsal pore, between this amplitude limiting mechanism and described vibrating diaphragm, is formed with predetermined space.
2. the silica-based MEMS microphone of shock resistance as claimed in claim 1, is characterized in that, described vibrating diaphragm is formed by polysilicon.
3. the silica-based MEMS microphone of shock resistance as claimed in claim 1, is characterized in that, described perforation backboard is formed by polysilicon.
4. the silica-based MEMS microphone of shock resistance as claimed in claim 1, is characterized in that,
Described perforation backboard is formed by the passivation layer with embedded metal layer, and wherein said metal level is as the electrode of described perforation backboard.
5. the silica-based MEMS microphone of shock resistance as claimed in claim 1, is characterized in that, also comprises prodger, and this prodger is outstanding from the lower surface of the described perforation backboard relative with described vibrating diaphragm.
6. the silica-based MEMS microphone of shock resistance as claimed in claim 1, is characterized in that,
Described amplitude limiting mechanism forms one or more in in-line, river font, cross, groined type and Y-shaped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320451499 CN203368755U (en) | 2013-07-26 | 2013-07-26 | Impact resistant silicon substrate MEMS microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320451499 CN203368755U (en) | 2013-07-26 | 2013-07-26 | Impact resistant silicon substrate MEMS microphone |
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| CN203368755U true CN203368755U (en) | 2013-12-25 |
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| CN 201320451499 Withdrawn - After Issue CN203368755U (en) | 2013-07-26 | 2013-07-26 | Impact resistant silicon substrate MEMS microphone |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103402163A (en) * | 2013-07-26 | 2013-11-20 | 歌尔声学股份有限公司 | Shock-resistant silicon-based micro-electro mechanical system (MEMS) microphone and manufacturing method thereof |
| CN106063296A (en) * | 2015-01-05 | 2016-10-26 | 歌尔股份有限公司 | Microphone with dustproof through holes |
| CN107986225A (en) * | 2016-10-26 | 2018-05-04 | 鑫创科技股份有限公司 | MEMS devices and the method for making MEMS |
| CN110366083A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
| CN112929804A (en) * | 2021-04-02 | 2021-06-08 | 瑞声声学科技(深圳)有限公司 | MEMS microphone chip |
| CN113556657A (en) * | 2021-06-29 | 2021-10-26 | 歌尔微电子股份有限公司 | MEMS microphone |
-
2013
- 2013-07-26 CN CN 201320451499 patent/CN203368755U/en not_active Withdrawn - After Issue
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103402163A (en) * | 2013-07-26 | 2013-11-20 | 歌尔声学股份有限公司 | Shock-resistant silicon-based micro-electro mechanical system (MEMS) microphone and manufacturing method thereof |
| CN103402163B (en) * | 2013-07-26 | 2016-06-15 | 歌尔声学股份有限公司 | Shock resistance silicon base MEMS microphone and manufacture method thereof |
| CN106063296A (en) * | 2015-01-05 | 2016-10-26 | 歌尔股份有限公司 | Microphone with dustproof through holes |
| CN107986225A (en) * | 2016-10-26 | 2018-05-04 | 鑫创科技股份有限公司 | MEMS devices and the method for making MEMS |
| CN107986225B (en) * | 2016-10-26 | 2020-06-09 | 鑫创科技股份有限公司 | MEMS device and method of fabricating a MEMS |
| US10798493B2 (en) | 2016-10-26 | 2020-10-06 | Solid State System Co., Ltd. | Micro-electro-mechanical systems (MEMS) device and method for fabricating the MEMS |
| CN110366083A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
| CN112929804A (en) * | 2021-04-02 | 2021-06-08 | 瑞声声学科技(深圳)有限公司 | MEMS microphone chip |
| CN113556657A (en) * | 2021-06-29 | 2021-10-26 | 歌尔微电子股份有限公司 | MEMS microphone |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20131225 Effective date of abandoning: 20160615 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |