CN203367270U - 模压型式内接线路球栅阵列集成电路 - Google Patents

模压型式内接线路球栅阵列集成电路 Download PDF

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CN203367270U
CN203367270U CN2013202718493U CN201320271849U CN203367270U CN 203367270 U CN203367270 U CN 203367270U CN 2013202718493 U CN2013202718493 U CN 2013202718493U CN 201320271849 U CN201320271849 U CN 201320271849U CN 203367270 U CN203367270 U CN 203367270U
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packaging
base plate
weld pad
integrated circuit
grid array
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廖明俊
赵亮
朱正杰
田金花
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Siliconware Technology SuZhou Co Ltd
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Abstract

本实用新型揭示了一种模压型式内接线路球栅阵列集成电路(MISBGA)，包括封装基板和封装基板上设置的封装体，封装体包括下垫片、半导体元件和密封树脂，还包括数个上焊垫，每个上焊垫通过焊线连通至芯片，每个上焊垫设置于导通孔的一端，使其通过导通孔内填充的金属材料连通至位于导通孔另一端的下焊垫，在下焊垫上搭载有焊锡球，基板厚度为0.12mm。通过把传统封装基板的厚度减薄，有助于将传统的半导体封装件的体积有效缩小。上下焊垫皆以阵列排列，有助缩小封装件体积，并提供更多输入输出通道。同时，设置一定间距的导通孔、配合U形口强度增强设计，并以合适材料制备基板，使封装基板既能减薄、又能满足结构强度的要求。

Description

模压型式内接线路球栅阵列集成电路
技术领域
本实用新型涉及一种半导体封装件，具体是一种结构强度强、尺寸超薄的模压型式内接线路球栅阵列集成电路(MISBGA)，属于半导体封装技术领域。
背景技术
随着电子产品向多功能、高性能和微型化发展，对IC芯片的封装要求越来越严格，当IC频率超过100MHz时，传统封装方式，如DIP封装、QFP封装和PGA封装，可能会产生布线串扰的现象。当IC芯片的特征尺寸越来越小、复杂程度越来越高，即集成电路上的I/0数越来越多、封装的I/0密度越来越高时，采用上述传统封装技术的封装件引脚间距不断缩小，实际生产过正中，不仅会给生产带来困难，也易导致成品率下降和组装成本提高。因此，一种解决上述技术问题的芯片焊球半导体封装BGA应运而生，成为高密度、高性能、多引脚封装的优选解决方案。但现有的BGA产品的引脚节距和厚度仍难以满足电子产品对封装件超薄厚度和窄节距的要求。
通常BGA产品使用基板的原材是一整块树脂塑料，由于在基板上形成导通贯孔会降低板材的结构强度，为了维持基板的结构强度，需要选用厚度较厚的基板，如此将使得传统的半导体封装件的体积无法有效缩小。因此，有必要提供一种保证强度结构性能、超薄的基板，以制得超薄半导体封装件，进而解决现有技术的所存在的问题。
实用新型内容
本实用新型的目的是提供一种半导体封装件，尤其是涉及一种半导体封装件，具体是一种结构强度强、尺寸超薄的模压型式内接线路球栅阵列集成电路的封装件。本实用新型的目的通过下述技术方案来实现：
一种超薄半导体封装件，包括封装基板和封装基板上设置的封装体，所述封装体包括通过粘结剂粘结在所述封装基板上的下垫片、搭载在所述下垫片上的半导体元件和用于密封的密封树脂。
本实用新型所述封装体还包括在所述封装基板上设置数个上焊垫，每个所述上焊垫通过相对应设置的焊线连通至芯片，每个所述上焊垫设置于封装基板上所开设导通孔的一端，使上焊垫通过导通孔内填充的金属材料连通至位于导通孔另一端的下焊垫，在所述下焊垫上搭载有焊锡球，所述封装基板的厚度在0.12mm。
本实用新型进一步地，所述焊锡球的直径为0.3mm，所述封装基板的厚度在0.12mm，所述上焊垫和所述下焊垫均以阵列排布在所述封装基板表面，有助缩小封装件体积，并提供更多输入输出通道，所述上焊垫、导通孔外壁和所述下焊垫形成增加封装基板强度的U型口。
本实用新型进一步地，所述封装基板的厚度比所述焊线球的直径小。
本实用新型进一步地，所述封装基板至少一表面形成至少一表面线路层。
本实用新型的应用施行使其显著技术效果主要体现在：
1、通过把传统封装基板的厚度减薄至0.12mm，有助于将传统的半导体封装件的体积有效缩小，生产封装基板的原料采用低成本的铁材代替传统价格高昂的树脂塑料，每片单片的封装基板的单价降低，有利于降低整个半导体封装件的成本；
2、通过多次实验测试表明，在减薄基板的同时，设置一定间距的导通孔、配合U形口强度增强设计，并以合适材料制备封装基板，可使本实用新型封装基板既能减薄、又能满足结构强度的要求。
以下便结合附图，对本实用新型的具体实施方式作进一步的详述，以使本实用新型技术方案更易于理解、掌握。
附图说明
图1是本实用新型模压型式内接线路球栅阵列集成电路较佳实施例的结构示意图；
图2是本实用新型模压型式内接线路球栅阵列集成电路上焊垫阵列排布照片图；
图3是本实用新型模压型式内接线路球栅阵列集成电路下焊垫阵列排布照片图；
图4是本实用新型模压型式内接线路球栅阵列集成电路局部结构示意图。
具体实施方式
下面结合附图与具体实施例对本实用新型进行说明，所举的实施例仅是对本实用新型作概括性例示，有助于更好地理解本实用新型，但并不会限制本实用新型范围。
请参阅图1，本实用新型超薄半导体封装件，如本领域公知的包括封装基板2和封装基板2上设置的封装体，该封装体包括通过粘结剂粘结在封装基板2上的下垫片23、搭载在所述下垫片23上的半导体元件1和用于密封的密封树脂11。如本实用新型所述的，封装体还包括在封装基板2上设置数个上焊垫20，每个上焊垫20通过相对应设置的焊线10连通至芯片1，每个上焊垫20设置于封装基板2上所开设导通孔24的一端，使上焊垫20通过导通孔24内填充的金属材料连通至位于导通孔24另一端的下焊垫21，在下焊垫21上搭载有焊锡球22。本实用新型所述的封装基板2的厚度较传统的封装基板薄、为0.12mm。
所述焊锡球的直径为0.3mm，所述上焊垫和所述下焊垫均以阵列排布在所述基板表面，有助缩小封装件体积，并提供更多输入输出通道，所述上焊垫、导通孔外壁和所述下焊垫形成增加封装基板强度的U型口
本实用新型实施例具体地，焊锡球22的直径为0.3mm，所述封装基板2的厚度在0.12mm，封装基板2的厚度比焊锡球22的直径小，使焊线球稳定的固定在下垫片21上。如图2和图3所示，所述上焊垫20和所述下焊垫21均以阵列排布在所述封装基板2表面，有助缩小封装件体积，并提供更多输入输出通道。如图4所示，所述上焊垫20、导通孔24外壁和所述下焊垫21形成增加封装基板强度的U型口。封装基板2包括可以铁、铜、树脂或陶瓷材料中的一种或多种制成，但不限于上述材料。封装基板2至少一表面形成至少一表面线路层。具体制备过程中，如本领域技术人员公知的常规BGA封装方法，本实用新型适用于不同类型的BGA封装，根据焊锡球22的排布方式，可适用于周边型、交错型或全阵列型，以PBGA为例具体步骤详述如下：
首先，基板的制备、即提供如本实用新型所述厚度的封装基板2，每封装基板2都事先经过常规的PCB加工工艺光刻步骤在其上形成预先设定好的电路图形，如导通孔、电极、和安装焊锡球22的焊区阵列；接着，采用粘结剂将芯片1粘结在封装基板2上，然后采用金线、铜线键合实现芯片1与基板的连接；然后模塑包封或液态胶灌封，以保护芯片、焊线10、上焊垫20和下焊垫21；使用吸拾工具将焊锡球22放置在下焊垫21上，在传统的回流焊炉内进行回流焊接；最后，对上述封装体进行离心清洗，除去留在封装体上的焊料和纤维颗粒，再经打标、分离、检查、测试和包装入库，即完成PBGA的封装步骤。其他类型的BGA封装同样如本领域技术人员所公知的技术，再次不在详述。
因此，本实用新型通过把传统封装基板的厚度减薄至0.12mm，有助于将传统的半导体封装件的体积有效缩小，并且由于生产封装基板的原料减少，每片单片的封装基板的单价降低，有利于降低整个半导体封装件的成本；并且，经多次实验测试表明，在减薄封装基板2的同时，设置一定间距的导通孔24、配合U形口强度增强设计（图4)，并以合适材料制备封装基板2，可使本实用新型封装基板既能减薄、又能满足结构强度的要求。
以上所述仅是本实用新型的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本实用新型技术原理的前提下，还可以作出若干改进和变型，这些改进和变型也应该视为本实用新型的保护范围。

Claims (4)

1.一种模压型式内接线路球栅阵列集成电路，包括封装基板（2）和封装基板（2）上设置的封装体，所述封装体包括通过粘结剂粘结在所述封装基板（2）上的下垫片（23）、搭载在所述下垫片（23）上的半导体元件（1）和用于密封的密封树脂（11），其特征在于：
所述封装体还包括在所述封装基板（2）上设置数个上焊垫（20），每个所述上焊垫（20）通过相对应设置的焊线（10）连通至芯片（1），每个所述上焊垫（20）设置于封装基板（2）上所开设导通孔（24）的一端，使上焊垫（20）通过导通孔（24）内填充的金属材料连通至位于导通孔（24）另一端的下焊垫（21），在所述下焊垫（21）上搭载有焊锡球（22），
所述封装基板（2）的厚度在0.12mm，所述上焊垫（20）和所述下焊垫（21）均以阵列排布在所述封装基板（2）表面，
所述上焊垫（20）、导通孔（24）外壁和所述下焊垫（21）形成增加封装基板（2）强度的U型口。
2.根据权利要求1所述的模压型式内接线路球栅阵列集成电路，其特征在于：所述焊锡球（22）的直径为0.3mm。
3.根据权利要求1所述的模压型式内接线路球栅阵列集成电路，其特征在于：所述封装基板（2）的厚度比所述焊锡球（22）的直径小。
4.根据权利要求1所述的模压型式内接线路球栅阵列集成电路，其特征在于：所述封装基板（2）至少一表面形成至少一表面线路层。
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CN103311215A (zh) * 2013-05-17 2013-09-18 矽品科技（苏州）有限公司 模压型式内接线路球栅阵列集成电路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103311215A (zh) * 2013-05-17 2013-09-18 矽品科技（苏州）有限公司 模压型式内接线路球栅阵列集成电路

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