CN203313156U - Phase locked loop based on micromechanical cantilever capacitive power sensor - Google Patents
Phase locked loop based on micromechanical cantilever capacitive power sensor Download PDFInfo
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- CN203313156U CN203313156U CN2013203523609U CN201320352360U CN203313156U CN 203313156 U CN203313156 U CN 203313156U CN 2013203523609 U CN2013203523609 U CN 2013203523609U CN 201320352360 U CN201320352360 U CN 201320352360U CN 203313156 U CN203313156 U CN 203313156U
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Abstract
The utility model discloses a phase locked loop based on a micromechanical cantilever capacitive power sensor. A first CPW signal line and a second CPW signal line are respectively used as the input ends of a reference signal and a feedback signal and are connected with a third CPW signal line through a two in one power combiner. An MEMS cantilever above the third CPW signal line and a sensing electrode form an MEMS cantilever capacitive power sensor between an anchorage zone of the MEMS cantilever and a pressure welding block of the sensing electrode. A variable capacitor in the MEMS cantilever capacitive power sensor is used to form a capacitor three point voltage controlled oscillator. An output signal of the capacitor three point voltage controlled oscillator accesses the input end of the feedback signal, so as to form a phase locked loop circuit. According to the utility model, the phase locked loop based on the micromechanical cantilever capacitive power sensor has the advantages of novel structure, low power consumption and easy integration; and compared with the traditional phase locked loop structure, a low pass filter is eliminated, so that the cost is saved and the size is reduced.
Description
Technical field
The utility model relates to a kind of phase-locked loop based on micromachine cantilever beam condenser type power sensor, belongs to the technical field of microelectromechanical systems (MEMS).
Background technology
Phase-locked loop is the closed loop automatic control system that can follow the tracks of the input signal phase place, has the good characteristics such as carrier track, modulation tracking, low threshold.It has been widely used in modulation /demodulation, frequency synthesis, carrier track, the extraction of television set colour subcarrier, the synchronous detection of analog and digital signal, the numerous areas such as bit synchronization in transfer of data at present.Phase-locked loop is a degenerative error control system of phase place, and operation principle is fairly simple, sets up exactly a tracking system, makes feedback signal and input signal be consistent on frequency and phase place.Phase-locked loop generally is comprised of phase discriminator, low pass filter, three essential parts of voltage-controlled oscillator.Phase discriminator is a phase comparison device, is used for detecting the phase difference between input signal (reference signal) and output signal (feedback signal).Filter will filter, export direct current signal by the radio-frequency component in error signal, show low-pass characteristic.Voltage controlled oscillator is a voltage-frequency converting means, and its frequency of oscillation is along with the input control voltage linear change.In recent years, along with deepening continuously that MEMS cantilever beam condenser type power sensor is studied, making becomes possibility based on the phase-locked loop of MEMS cantilever beam condenser type power sensor.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the utility model provides a kind of phase-locked loop based on micromachine cantilever beam condenser type power sensor, has solved conventional phase locked loops and has taken up room greatlyr, and integrated level is low, the problem that the direct current consume is larger.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is:
Phase-locked loop based on micromachine cantilever beam condenser type power sensor, comprise gallium arsenide substrate, the ground wire, CPW holding wire, the merit that are arranged on gallium arsenide substrate are closed device and MEMS cantilever beam condenser type power sensor, and external capacitance three-point type voltage controlled oscillator, axis of symmetry of definition on gallium arsenide substrate.
Described ground wire comprises upper side edge ground wire, lower side ground wire and a common ground, described upper side edge ground wire and lower side ground wire are separately positioned on upside and the downside of the axis of symmetry, described common ground is positioned at and claims on axis, described upper side edge ground wire is connected with common ground by an air bridges, and described lower side ground wire is connected with common ground by an air bridges.
Described merit is closed device and is comprised that symmetry is positioned at two ACPS holding wires and the isolation resistance of axis of symmetry both sides, the input of described two ACPS holding wires is isolated by isolation resistance, the input of described two ACPS holding wires closes the input of device as merit, after the output of described two ACPS holding wires is connected, close the output of device as merit.
Described CPW holding wire comprises a CPW holding wire, the 2nd CPW holding wire and the 3rd CPW holding wire, a described CPW holding wire is positioned at the both sides of the axis of symmetry and is not connected with the 2nd CPW holding wire symmetry, described the 3rd CPW holding wire symmetry is positioned on the axis of symmetry, a described CPW holding wire and the 2nd CPW holding wire are connected with two inputs that merit is closed device respectively, respectively as the input with reference to signal and feedback signal, the air bridges of described connection upper side edge ground wire and common ground is across on a CPW holding wire, the air bridges of described connection lower side ground wire and common ground is across on the 2nd CPW holding wire, described the 3rd CPW holding wire is connected with the output that merit is closed device, between the end of described the 3rd CPW holding wire and upper side edge ground wire, be provided with the terminal build-out resistor, between the end of described the 3rd CPW holding wire and lower side ground wire, also be provided with the terminal build-out resistor.
The MEMS cantilever beam of described MEMS cantilever beam condenser type power sensor is across above the 3rd CPW holding wire, the stiff end of described MEMS cantilever beam is fixed in the anchor district, the below of described MEMS cantilever beam also is provided with sensing electrode, the microwave signal power that the variable capacitance that described sensing electrode and MEMS cantilever beam form comes in order to respond to the 3rd CPW holding wire transmission changes, and described sensing electrode is connected with press welding block by connecting line.
Described anchor district and press welding block are connected with two inputs of external capacitance three-point type voltage controlled oscillator respectively, and the output of described capacitance three-point type voltage controlled oscillator is linked into the input of feedback signal.
Described anchor district is positioned at the outside of upper side edge ground wire/lower side ground wire, and described upper side edge ground wire/lower side ground wire, the 3rd CPW holding wire and sensing electrode are positioned on the surface below the MEMS cantilever beam and are provided with the silicon nitride medium layer.
Described press welding block is positioned at the outside of upper side edge ground wire/lower side ground wire, described upper side edge ground wire/lower side ground wire is provided with breach, described connecting line passes breach, and described breach two ends connect by air bridges, and the surface that described connecting line is positioned at the air bridges below is provided with the silicon nitride medium layer.
The surface that a described CPW holding wire and the 2nd CPW holding wire are positioned at the air bridges below is provided with the silicon nitride medium layer.
Above-described phase-locked loop based on micromachine cantilever beam condenser type power sensor, the one CPW holding wire, upper side edge ground wire and common ground have formed a CPW transmission line, the 2nd CPW holding wire, lower side ground wire and common ground have formed another CPW transmission line, the 3rd CPW holding wire, lower side ground wire and upper side edge ground wire have formed the 3rd CPW transmission line, the one CPW holding wire and the 2nd CPW holding wire are respectively as the input with reference to signal and feedback signal, the one CPW holding wire and the 2nd CPW holding wire of two air bridges and its below all form building-out capacitor, the design of this building-out capacitor can realize the circuit impedance coupling, make the integrated level of whole phase-locked loop higher, through a two-in-one merit, close device the two paths of signals vector is synthetic, again composite signal is transferred on the 3rd CPW holding wire, then MEMS cantilever beam condenser type power sensor detects the power of the composite signal on the 3rd CPW holding wire, finally export variable capacitance, the variable capacitance of output directly accesses the capacitance three-point type voltage controlled oscillator, the variable capacitance that MEMS cantilever beam and sensing electrode form is for forming the capacitance three-point type voltage controlled oscillator, the output signal of capacitance three-point type voltage controlled oscillator is linked into the input of feedback signal, thereby formation phase-locked loop, realized the phase-locked loop based on micromachine cantilever beam condenser type power sensor.
Beneficial effect: the phase-locked loop based on micromachine cantilever beam condenser type power sensor of the present utility model not only has advantages of novel structure, low-power consumption and is easy to integrated, and compare with traditional phase-locked loop, MEMS cantilever beam condenser type power sensor structure of the present utility model can realize the function of phase discriminator and low pass filter simultaneously, saved low pass filter, take up room little, integrated level is high, has reduced the direct current loss, can be further cost-saving and reduce size.
The accompanying drawing explanation
Fig. 1 is schematic diagram of the present utility model.
Fig. 2 is A1-A2 profile of the present utility model.
Fig. 3 is B1-B2 profile of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
As shown in Figure 1,2 and 3: based on the phase-locked loop of micromachine cantilever beam condenser type power sensor, comprise gallium arsenide substrate 1, the ground wire, CPW holding wire, the merit that are arranged on gallium arsenide substrate 1 are closed device and MEMS cantilever beam condenser type power sensor, and external capacitance three-point type voltage controlled oscillator, axis of symmetry of definition on gallium arsenide substrate 1.
Described ground wire comprises upper side edge ground wire 21, lower side ground wire 22 and a common ground 23, described upper side edge ground wire 21 and lower side ground wire 22 are separately positioned on upside and the downside of the axis of symmetry, described common ground 23 is positioned at and claims on axis, described upper side edge ground wire 21 is connected with common ground 23 by an air bridges 10, and described lower side ground wire 22 is connected with common ground 23 by an air bridges 10;
Described merit is closed device and is comprised that symmetry is positioned at two ACPS holding wires 5 and the isolation resistance 4 of axis of symmetry both sides, the input of described two ACPS holding wires 5 is by isolation resistance 4 isolation, the input of described two ACPS holding wires 5 closes the input of device as merit, after the output of described two ACPS holding wires 5 is connected, close the output of device as merit.
Described CPW holding wire comprises a CPW holding wire 31, the 2nd CPW holding wire 32 and the 3rd CPW holding wire 33, a described CPW holding wire 31 is positioned at the both sides of the axis of symmetry and is not connected with the 2nd CPW holding wire 32 symmetries, described the 3rd CPW holding wire 33 symmetries are positioned on the axis of symmetry, a described CPW holding wire 31 and the 2nd CPW holding wire 32 are connected with two inputs that merit is closed device respectively, respectively as the input with reference to signal and feedback signal, the air bridges 10 of described connection upper side edge ground wire 21 and common ground 23 is across on a CPW holding wire 31, the air bridges 10 of described connection lower side ground wire 22 and common ground 23 is across on the 2nd CPW holding wire 32, described the 3rd CPW holding wire 33 is connected with the output that merit is closed device, between the end of described the 3rd CPW holding wire 33 and upper side edge ground wire 21, be provided with terminal build-out resistor 6, between the end of described the 3rd CPW holding wire 33 and lower side ground wire 22, also be provided with terminal build-out resistor 6.
The MEMS cantilever beam 12 of described MEMS cantilever beam condenser type power sensor is across above the 3rd CPW holding wire 33, the stiff end of described MEMS cantilever beam 12 is fixed in anchor district 11, the below of described MEMS cantilever beam 12 also is provided with sensing electrode 7, described sensing electrode 7 changes with the microwave signal power that the variable capacitance that MEMS cantilever beam 12 forms comes in order to respond to the 3rd CPW holding wire 33 transmission, and described sensing electrode 7 is connected with press welding block 8 by connecting line 13.
Described anchor district 11 and press welding block 8 are connected with two inputs of external capacitance three-point type voltage controlled oscillator respectively, and the output signal of described capacitance three-point type voltage controlled oscillator is linked into the input of feedback signal.
Described anchor district 11 is positioned at the outside of upper side edge ground wire 21/ lower side ground wire 22, and described upper side edge ground wire 21/ lower side ground wire 22, the 3rd CPW holding wire 33 and sensing electrode 7 are positioned on the surface of MEMS cantilever beam 12 belows and are provided with silicon nitride medium layer 9.
Described press welding block 8 is positioned at the outside of upper side edge ground wire 21/ lower side ground wire 22, described upper side edge ground wire 21/ lower side ground wire 22 is provided with breach, described connecting line 13 passes breach, described breach two ends connect by air bridges 10, and the surface that described connecting line 13 is positioned at air bridges 10 belows is provided with silicon nitride medium layer 9.
The surface that a described CPW holding wire and the 2nd CPW holding wire are positioned at air bridges 10 belows is provided with silicon nitride medium layer 9.
Above-described phase-locked loop based on micromachine cantilever beam condenser type power sensor, the one CPW holding wire, upper side edge ground wire and common ground have formed a CPW transmission line, the 2nd CPW holding wire, lower side ground wire and common ground have formed another CPW transmission line, the 3rd CPW holding wire, lower side ground wire and upper side edge ground wire have formed the 3rd CPW transmission line, the one CPW holding wire and the 2nd CPW holding wire are respectively as the input with reference to signal and feedback signal, the one CPW holding wire and the 2nd CPW holding wire of two air bridges and its below all form building-out capacitor, the design of this building-out capacitor can realize the circuit impedance coupling, make the integrated level of whole phase-locked loop higher, through a two-in-one merit, close device the two paths of signals vector is synthetic, again composite signal is transferred on the 3rd CPW holding wire, then MEMS cantilever beam condenser type power sensor detects the power of the composite signal on the 3rd CPW holding wire, finally export variable capacitance, the variable capacitance of output directly accesses the capacitance three-point type voltage controlled oscillator, the variable capacitance that MEMS cantilever beam and sensing electrode form is for forming the capacitance three-point type voltage controlled oscillator, the output signal of capacitance three-point type voltage controlled oscillator is linked into the input of feedback signal, thereby formation phase-locked loop, realized the phase-locked loop based on micromachine cantilever beam condenser type power sensor.
Preparation method based on the phase-locked loop of micromachine cantilever beam condenser type power sensor comprises the following steps:
1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of GaAs is that (general concentration is more than or equal to 10 in heavy doping
18Cm
-3), its square resistance is 100 Ω～130 Ω;
2) photoetching: removal will retain the photoresist in tantalum nitride place;
3) sputter tantalum nitride, its thickness are 1 μ m;
4) peel off;
5) photoetching: removal will retain the photoresist in the place of ground floor gold;
6) evaporation ground floor gold, its thickness is 0.3 μ m;
7) peel off, begin to take shape press welding block and the connecting line of ground wire and CPW holding wire, MEMS cantilever beam De Mao district, sensing electrode, sensing electrode;
8) anti-carve tantalum nitride, form the terminal build-out resistor that merit is closed isolation resistance and the 3rd CPW holding wire end of device, its resistance value is 25 Ω;
9) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
Thick silicon nitride medium layer;
10) photoetching etch silicon nitride dielectric layer: retain the silicon nitride on MEMS cantilever beam below the 3rd CPW holding wire and lower side ground wire, sensing electrode and air bridges below connecting line;
11) deposit photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply the thick polyimide sacrificial layer of 1.6 μ m, require to fill up pit; The photoetching polyimide sacrificial layer, only retain the sacrifice layer of MEMS cantilever beam and air bridges below;
12) evaporation titanium/gold/titanium, its thickness is
: the down payment of evaporation for electroplating;
13) photoetching: removal will be electroplated local photoresist;
14) electrogilding, its thickness are 2 μ m;
15) remove photoresist: remove and do not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, corrosion down payment, press welding block and the connecting line of formation ground wire and CPW holding wire, MEMS cantilever beam, MEMS cantilever beam De Mao district, air bridges, sensing electrode;
17) by this gallium arsenide substrate thinning back side to 100 μ m;
18) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer of MEMS cantilever beam and air bridges below, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries;
19) external capacitor bikini voltage controlled oscillator.
The above is only preferred implementation of the present utility model; be noted that for those skilled in the art; under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (4)
1. based on the phase-locked loop of micromachine cantilever beam condenser type power sensor, it is characterized in that: comprise gallium arsenide substrate (1), the ground wire, CPW holding wire, the merit that are arranged on gallium arsenide substrate (1) are closed device and MEMS cantilever beam condenser type power sensor, and external capacitance three-point type voltage controlled oscillator, at axis of symmetry of the upper definition of gallium arsenide substrate (1);
Described ground wire comprises upper side edge ground wire (21), lower side ground wire (22) and a common ground (23), described upper side edge ground wire (21) and lower side ground wire (22) are separately positioned on upside and the downside of the axis of symmetry, described common ground (23) is positioned at and claims on axis, described upper side edge ground wire (21) is connected with common ground (23) by an air bridges (10), and described lower side ground wire (22) is connected with common ground (23) by an air bridges (10);
Described merit is closed device and is comprised that symmetry is positioned at two ACPS holding wires (5) and the isolation resistance (4) of axis of symmetry both sides, the input of described two ACPS holding wires (5) is by isolation resistance (4) isolation, the input of described two ACPS holding wires (5) closes the input of device as merit, after the output of described two ACPS holding wires (5) is connected, close the output of device as merit;
Described CPW holding wire comprises a CPW holding wire (31), the 2nd CPW holding wire (32) and the 3rd CPW holding wire (33), a described CPW holding wire (31) is positioned at the both sides of the axis of symmetry and is not connected with the 2nd CPW holding wire (32) symmetry, described the 3rd CPW holding wire (33) symmetry is positioned on the axis of symmetry, a described CPW holding wire (31) and the 2nd CPW holding wire (32) are connected with two inputs that merit is closed device respectively, respectively as the input with reference to signal and feedback signal, the air bridges (10) of described connection upper side edge ground wire (21) and common ground (23) is across on a CPW holding wire (31), the air bridges (10) of described connection lower side ground wire (22) and common ground (23) is across on the 2nd CPW holding wire (32), described the 3rd CPW holding wire (33) is connected with the output that merit is closed device, between the end of described the 3rd CPW holding wire (33) and upper side edge ground wire (21), be provided with terminal build-out resistor (6), between the end of described the 3rd CPW holding wire (33) and lower side ground wire (22), also be provided with terminal build-out resistor (6),
The MEMS cantilever beam (12) of described MEMS cantilever beam condenser type power sensor is across the top at the 3rd CPW holding wire (33), the stiff end of described MEMS cantilever beam (12) is fixed in anchor district (11), the below of described MEMS cantilever beam (12) also is provided with sensing electrode (7), described sensing electrode (7) changes with the microwave signal power that the variable capacitance that MEMS cantilever beam (12) forms comes in order to respond to the 3rd CPW holding wire (33) transmission, and described sensing electrode (7) is connected with press welding block (8) by connecting line (13);
Described anchor district (11) and press welding block (8) are connected with two inputs of external capacitance three-point type voltage controlled oscillator respectively, and described capacitance three-point type voltage controlled oscillator output signal is linked into the input of feedback signal.
2. the phase-locked loop based on micromachine cantilever beam condenser type power sensor according to claim 1, it is characterized in that: described anchor district (11) is positioned at the outside of upper side edge ground wire (21)/lower side ground wire (22), and described upper side edge ground wire (21)/lower side ground wire (22), the 3rd CPW holding wire (33) and sensing electrode (7) are positioned on the surface below MEMS cantilever beam (12) and are provided with silicon nitride medium layer (9).
3. the phase-locked loop based on micromachine cantilever beam condenser type power sensor according to claim 1, it is characterized in that: described press welding block (8) is positioned at the outside of upper side edge ground wire (21)/lower side ground wire (22), described upper side edge ground wire (21)/lower side ground wire (22) is provided with breach, described connecting line (13) passes breach, described breach two ends connect by air bridges (10), and the surface that described connecting line (13) is positioned at air bridges (10) below is provided with silicon nitride medium layer (9).
4. the phase-locked loop based on micromachine cantilever beam condenser type power sensor according to claim 1 is characterized in that: the surface that a described CPW holding wire and the 2nd CPW holding wire are positioned at air bridges (10) below is provided with silicon nitride medium layer (9).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013203523609U CN203313156U (en) | 2013-06-19 | 2013-06-19 | Phase locked loop based on micromechanical cantilever capacitive power sensor |
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| CN2013203523609U CN203313156U (en) | 2013-06-19 | 2013-06-19 | Phase locked loop based on micromechanical cantilever capacitive power sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346786A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase-locked loop based on micro-mechanical cantilever beam capacitive power sensor and preparation method thereof |
| CN106059500A (en) * | 2016-06-06 | 2016-10-26 | 东南大学 | Frequency multiplier based on MEMS (Micro Electro Mechanical Systems) broadband phase detector and temperature compensation resistor |
-
2013
- 2013-06-19 CN CN2013203523609U patent/CN203313156U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346786A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase-locked loop based on micro-mechanical cantilever beam capacitive power sensor and preparation method thereof |
| CN103346786B (en) * | 2013-06-19 | 2015-09-09 | 东南大学 | Based on phase-locked loop and the preparation method of micromachine cantilever beam condenser type power sensor |
| CN106059500A (en) * | 2016-06-06 | 2016-10-26 | 东南大学 | Frequency multiplier based on MEMS (Micro Electro Mechanical Systems) broadband phase detector and temperature compensation resistor |
| CN106059500B (en) * | 2016-06-06 | 2018-10-23 | 东南大学 | Frequency multiplier based on MEMS wideband phases detector and thermo-compensator |
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Granted publication date: 20131127 Effective date of abandoning: 20150909 |
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