CN203305047U

CN203305047U - Grinding device

Info

Publication number: CN203305047U
Application number: CN2013202240104U
Authority: CN
Inventors: 小滨达也; 小畠严贵; 野村季和; 木村宪雄; 川岛清隆
Original assignee: Ebara Corp
Current assignee: Ebara Corp
Priority date: 2013-04-27
Filing date: 2013-04-27
Publication date: 2013-11-27
Anticipated expiration: 2023-04-27

Abstract

The utility model provides a grinding device. The grinding device can evenly and efficiently supply grinding fluid to the grinded surfaces of grinded objects. The grinding device comprises a grinding workbench (22) and a top ring (24), wherein the grinding workbench (22) is provided with a grinding surface (52), and the top ring (24) keeps a semiconductor chip (W) and enables the semiconductor chip (W) to be pressed on the grinding surface (52). In addition, the grinding device further comprises a grinding fluid supplying port (57) and a moving mechanism, wherein the grinding fluid supplying port (57) supplies the grinding fluid (Q) to the grinding surface (52), and the moving mechanism moves the grinding fluid supplying port (57) so that the grinding fluid (Q) can be evenly distributed on the whole surface of the semiconductor chip (W) due to relative movement between the semiconductor chip (W) and the grinding surface (52).

Description

Lapping device

Technical field

The utility model relates to lapping device, particularly relates to the grinding objects such as grinding semiconductor chip and makes the lapping device of its planarization.

Background technology

In recent years, along with the development of the Highgrade integration of semiconductor device, the wiring of circuit miniaturization gradually, wire distribution distance is from also dwindling gradually.In live width, be particularly in the photolithographic situation below 0.5 μ m, because the depth of focus is more shallow, so the flatness of the imaging surface of inevitable requirement stepping exposure device (stepper).As one of means of the flattening surface that makes such semiconductor wafer, known have a burnishing device that carries out cmp (CMP).

Such cmp (CMP) device possesses apical ring (top ring) and at upper surface, has the grinding table of grinding pad (pad).And, semiconductor wafer is clipped between grinding table and apical ring, lapping liquid (slurry) is supplied with in the surface of grinding pad on one side, Yi Bian utilize apical ring that semiconductor wafer is pressed on to grinding table, thus the surface grinding of semiconductor wafer is become to smooth and is mirror-like.

Patent documentation 1: TOHKEMY 2002-113653 communique

Patent documentation 2: Japanese kokai publication hei 10-58309 communique

Patent documentation 3: Japanese kokai publication hei 10-286758 communique

Patent documentation 4: TOHKEMY 2003-133277 communique

Patent documentation 5: TOHKEMY 2001-237208 communique

The utility model content

The first purpose of the present utility model is to provide a kind of lapping device, can evenly and efficiently supply with lapping liquid to the face that is polished that grinds object.

The second purpose of the present utility model is to provide a kind of lapping device, can be stably between abradant surface and grinding object, supplying with lapping liquid.

The 3rd purpose of the present utility model is to provide a kind of lapping device, even under and condition that relative velocity is higher lower at grinding pressure, also appropriate lapping liquid can be held in to abradant surface and on abradant surface, form and grind uniformly liquid film.

The 4th purpose of the present utility model is to provide a kind of lapping device, can increase the maintenance dose of the lapping liquid on abradant surface and improve the service efficiency of lapping liquid.

The 5th purpose of the present utility model is to provide a kind of lapping device, abradant surface can be remained to clean state, thereby can make the abrasive characteristic of device stable.

According to the first mode of the present utility model, a kind of lapping device is provided, can evenly and efficiently to the face that is polished that grinds object, supply with lapping liquid.This lapping device possesses: have the grinding table of abradant surface and keep grinding object and grinding the apical ring that object presses on above-mentioned abradant surface.In addition, lapping device also possesses: the lapping liquid supply port of above-mentioned abradant surface being supplied with to lapping liquid; And travel mechanism, this travel mechanism moves above-mentioned lapping liquid supply port, so that above-mentioned lapping liquid spreads all over whole of above-mentioned grinding object equably because of relatively moving between above-mentioned grinding object and above-mentioned abradant surface.

In addition, drive the horizontal vibration that apical ring and grinding table carry out certain horizontal cycle motion, certain orientation or any direction.

Like this, by being moved in process of lapping, the lapping liquid supply port can evenly and efficiently to the face that is polished that grinds object, supply with lapping liquid.That is,, because the distribution that can make lapping liquid towards the quantity delivered of the face that the is polished supply of grinding object becomes evenly, therefore can improve the grinding rate, improve the uniformity of grinding rate in being polished face.Therefore in addition, due to the efficient supply that has realized lapping liquid, can reduce the use amount of lapping liquid, thereby thereby the waste that can eliminate lapping liquid reduces grinds cost.

And then, by the movement in process of lapping by the lapping liquid supply port, with certain horizontal cycle motion, certain orientation or any direction of apical ring and grinding table on the horizontal vibration combination, can further improve the uniformity of grinding rate in being polished face.

According to the second mode of the present utility model, a kind of lapping device is provided, can evenly and efficiently to the face that is polished that grinds object, supply with lapping liquid.This lapping device possesses: have the grinding table of abradant surface and keep grinding object and grinding the apical ring that object presses on above-mentioned abradant surface.In addition, lapping device also possesses: a plurality of lapping liquid supply ports of above-mentioned abradant surface being supplied with to lapping liquid; And liquid measure controlling organization, this liquid measure controlling organization is controlled the quantity delivered from the above-mentioned lapping liquid of above-mentioned lapping liquid supply port, so that above-mentioned lapping liquid can spread all over whole of above-mentioned grinding object equably because of relatively moving between above-mentioned grinding object and above-mentioned abradant surface.

In addition, drive apical ring and grinding table and carry out the horizontal vibration on certain horizontal cycle motion, certain orientation or any direction.

Like this, by controlling the quantity delivered from the lapping liquid of each lapping liquid supply port, thereby can evenly and efficiently to the face that is polished that grinds object, supply with lapping liquid.That is,, because the distribution that can make lapping liquid towards the quantity delivered of the face that the is polished supply of grinding object becomes evenly, therefore can improve the grinding rate, improve the uniformity of grinding rate in being polished face.Therefore in addition, due to the efficient supply that has realized lapping liquid, can reduce the use amount of lapping liquid, thereby can eliminate the wasting phenomenon of lapping liquid and reduce the grinding cost.

In addition, by control, from the quantity delivered of the lapping liquid of each lapping liquid supply port and by the combination of the horizontal vibration on certain horizontal cycle motion, certain orientation or any direction of apical ring and grinding table, can further improve the uniformity of grinding rate in being polished face.

According to Third Way of the present utility model, a kind of lapping device is provided, can evenly and efficiently to the face that is polished that grinds object, supply with lapping liquid.This lapping device possesses: have the grinding table of abradant surface and keep grinding object and grinding the apical ring that object presses on above-mentioned abradant surface.In addition, lapping device also possesses: lapping liquid is disperseed and supply with the discrete part of this lapping liquid and the lapping liquid supply port of above-mentioned discrete part being supplied with to lapping liquid to above-mentioned abradant surface.

Like this, owing to can utilizing discrete part to make disperse and abradant surface is supplied with to this lapping liquid from the lapping liquid of lapping liquid supply port, therefore can make lapping liquid become even towards the distribution of the quantity delivered of the face that the is polished supply of grinding object.Thereby can improve grinding rate, the uniformity of raising grinding rate in being polished face.

In addition, by lapping liquid being disperseed and above-mentioned abradant surface being supplied with the discrete part of this lapping liquid and, by the combination of the horizontal vibration on certain horizontal cycle motion, certain orientation or any direction of apical ring and grinding table, can further be improved the uniformity of grinding rate in being polished face thus.

According to cubic formula of the present utility model, a kind of lapping device is provided, can evenly and efficiently to the face that is polished that grinds object, supply with lapping liquid.This lapping device possesses: have the grinding table of abradant surface and keep grinding object and grinding the apical ring that object presses on above-mentioned abradant surface.In addition, lapping device also possesses: the lapping liquid supply port of above-mentioned abradant surface being supplied with to lapping liquid; And discrete part, this discrete part makes from above-mentioned lapping liquid supply port to the lapping liquid dispersion of above-mentioned abradant surface supply and between above-mentioned grinding object and above-mentioned abradant surface, supplying with this lapping liquid.

Like this, owing to can utilizing discrete part to make to disperse from the lapping liquid that the lapping liquid supply port is supplied with, therefore can make lapping liquid become even towards the distribution of the quantity delivered of the face that the is polished supply of grinding object.Thereby can improve grinding rate, the uniformity of raising grinding rate in being polished face.

In addition, by the combination of the horizontal vibration on certain horizontal cycle motion, certain orientation or any direction of the movement in process of lapping and apical ring and grinding table by lapping liquid discrete part, lapping liquid supply port, can further improve the uniformity of grinding rate in being polished face.

According to the 5th mode of the present utility model, a kind of lapping device is provided, can be stably between abradant surface and grinding object, supplying with lapping liquid.This lapping device possesses: have the grinding table of abradant surface and keep grinding object and grinding the apical ring that object presses on above-mentioned abradant surface.Above-mentioned apical ring possesses the retaining ring of the ring-type of the outer peripheral edges that keep above-mentioned grinding object.The face contacted with above-mentioned abradant surface in above-mentioned retaining ring, be formed with the groove that the outer peripheral face of this retaining ring is communicated with inner peripheral surface.The groove of above-mentioned retaining ring is about 10%～50% at the aperture opening ratio of above-mentioned outer peripheral face.

Like this, by the retaining ring at apical ring, form the groove that outer peripheral face is communicated with inner peripheral surface, can stably between abradant surface and grinding object, supply with lapping liquid.In addition, if the groove of retaining ring is made as to about 10%～50% at the aperture opening ratio of above-mentioned outer peripheral face, can effectively between abradant surface and grinding object, supply with lapping liquid, thereby can obtain stable grinding rate, and the lapping liquid of reacted inertia can be discharged to outside effectively via groove.

According to the 6th mode of the present utility model, a kind of lapping device is provided, even under and condition that relative velocity is higher lower at grinding pressure, on abradant surface, form and grind uniformly liquid film thereby also appropriate lapping liquid can be held in to abradant surface.This lapping device possesses: have the grinding table of abradant surface and keep grinding object and grinding the apical ring that object presses on above-mentioned abradant surface.In addition, lapping device possesses: supply with at least one lapping liquid supply port of lapping liquid and make above-mentioned abradant surface and above-mentioned grinding object carries out the relative motion mechanism of relative motion with the relative velocity of 2m/s to above-mentioned abradant surface.It is 0.38mm that above-mentioned abradant surface has sectional area ²Above groove.Grinding is paid somebody's debt and expected repayment later has cavernous.

Like this, by abradant surface, forming the groove with larger sectional area, even under and condition that relative velocity is higher lower at grinding pressure, also appropriate lapping liquid can be held in to abradant surface and on abradant surface, form grinding liquid film uniformly.In addition, because grinding pad has cavernous, therefore the outside of semiconductor wafer and the grinding liquid film of central part are formed uniformly.

According to the 7th mode of the present utility model, a kind of lapping device is provided, the maintenance dose of the lapping liquid of abradant surface can be increased, thereby the service efficiency of lapping liquid can be improved.This lapping device possesses: grinding table, maintenance grinding object with abradant surface also will grind object and press on the apical ring of above-mentioned abradant surface and lapping liquid supply port from lapping liquid to above-mentioned abradant surface that supply with.It is 2.98mm that above-mentioned abradant surface has a plurality of aperture areas ²Above hole.Grinding is paid somebody's debt and expected repayment later has cavernous.

Like this, by abradant surface, forming a plurality of holes with larger aperture area, thereby the maintenance dose of the lapping liquid of abradant surface can be increased, the service efficiency of lapping liquid can be improved.Thereby can reduce the use amount of lapping liquid, thereby can reduce significantly the grinding cost.

Therefore in addition, because grinding pad has cavernous, can make the maintenance dose of lapping liquid of grinding pad of the lower surface of the outside of semiconductor wafer and central part become even.

According to all directions of the present utility model formula, a kind of lapping device is provided, can supply with equably lapping liquid to grinding object.This lapping device possesses: the grinding table with abradant surface; And a plurality of lapping liquid supply ports of above-mentioned abradant surface being supplied with to lapping liquid.In addition, lapping device possesses a plurality of lapping liquid supply lines, and the plurality of lapping liquid supply line extends from above-mentioned a plurality of lapping liquid supply ports, and with the lapping liquid circulatory system of the outside that is arranged at lapping device, directly is connected respectively.

Lapping device also possesses the lapping liquid circulatory system, and this lapping liquid circulatory system has stoste case, adjusting tank.

According to such structure, can realize that lapping liquid supplies with uniformly towards grinding object, thereby can improve the grinding rate, and can significantly improve the uniformity of grinding rate in being polished face.

In addition, can also with uniform concentration, to lapping device, supply with lapping liquid and grind incessantly all the time.

According to the 9th mode of the present utility model, a kind of lapping device is provided, can all the time abradant surface be remained to clean conditions, thereby can make the abrasive characteristic of device keep stable.This lapping device possesses: have abradant surface grinding table, keep to grind object and will grind that object presses on the apical ring of above-mentioned abradant surface and to the fluid ejection mechanisms of the fluid-mixing of above-mentioned abradant surface jet cleaning liquid and gas.In addition, lapping device also possesses output mechanism, and this output mechanism is disposed at the downstream of the moving direction of above-mentioned abradant surface with respect to above-mentioned fluid ejection mechanisms, and above-mentioned fluid-mixing is discharged from above-mentioned abradant surface.

Utilize such output mechanism the cleaning fluid from the fluid injection equipment can be discharged at once to the outside of abradant surface, thereby can all the time abradant surface be remained to clean conditions.Therefore can make the abrasive characteristic of lapping device stable, and make the atomization of being undertaken by fluid ejection mechanisms in process of lapping (In-situ atomization) become possibility.

According to the cubic formula of the first mode to the of the present utility model, can evenly and efficiently to the face that is polished that grinds object, supply with lapping liquid.

According to the 5th mode of the present utility model, can be stably between abradant surface and grinding object, supplying with lapping liquid.

According to the 6th mode of the present utility model, even under and condition that relative velocity is higher lower at grinding pressure, also appropriate lapping liquid can be held in to abradant surface and on abradant surface, form and grind uniformly liquid film.

According to the 7th mode of the present utility model, can increase the maintenance dose of the lapping liquid of abradant surface, thereby can improve the service efficiency of lapping liquid.

According to the of the present utility model the formula from all directions, can be uninterruptedly and to grinding object, supply with equably the lapping liquid of uniform concentration.

According to the 9th mode of the present utility model, can all the time abradant surface be remained to clean conditions, thereby can make the abrasive characteristic of device stable.

The accompanying drawing explanation

Fig. 1 is the top view that an embodiment of the related lapping device of the utility model is shown.

Fig. 2 is the longitudinal section of part that the grinding unit of lapping device shown in Figure 1 is shown.

Fig. 3 is the upward view of an example that the retaining ring of apical ring shown in Figure 2 is shown.

Fig. 4 is the upward view of other example that the retaining ring of apical ring shown in Figure 2 is shown.

Fig. 5 is the upward view of other example that the retaining ring of apical ring shown in Figure 2 is shown.

Fig. 6 is the upward view of other example that the retaining ring of apical ring shown in Figure 2 is shown.

Fig. 7 is the top view of part of the grinding unit of schematically illustrated lapping device shown in Figure 1.

Fig. 8 is the stereogram that is illustrated in the gas emitting mechanism used in grinding unit shown in Figure 7.

Fig. 9 is the top view of a variation that the grinding unit of lapping device shown in Figure 1 is shown.

Figure 10 is the stereogram that the grinding pad of grinding unit shown in Figure 7 is shown.

Figure 11 a is the amplification longitudinal section of grinding pad shown in Figure 10.

Figure 11 b is the amplification longitudinal section of grinding pad shown in Figure 10.

Figure 11 c is the amplification longitudinal section of grinding pad shown in Figure 10.

Figure 12 is the amplification plan view that the variation of grinding pad shown in Figure 10 is shown.

Figure 13 is the top view of variation that the grinding unit of lapping device shown in Figure 1 is shown.

Figure 14 is the top view of variation that the grinding unit of lapping device shown in Figure 1 is shown.

Figure 15 is the top view of variation that the grinding unit of lapping device shown in Figure 1 is shown.

Figure 16 is the top view of variation that the grinding unit of lapping device shown in Figure 1 is shown.

Figure 17 is the top view of variation that the grinding unit of lapping device shown in Figure 1 is shown.

Figure 18 is the top view of variation that the grinding unit of lapping device shown in Figure 1 is shown.

Figure 19 is the top view of variation that the grinding unit of lapping device shown in Figure 1 is shown.

Figure 20 is the top view of variation that the grinding unit of lapping device shown in Figure 1 is shown.

Figure 21 is the stereogram that is illustrated in the variation of the lapping liquid supply nozzle used in the grinding unit of lapping device shown in Figure 1.

Figure 22 is the longitudinal section of lapping liquid supply nozzle shown in Figure 21.

Figure 23 is the stereogram that the variation of lapping liquid supply nozzle shown in Figure 21 is shown.

Figure 24 is the stereogram that is illustrated in the variation of the lapping liquid supply nozzle used in the grinding unit of lapping device shown in Figure 1.

Figure 25 is the stereogram that the variation of lapping liquid supply nozzle shown in Figure 21 is shown.

Figure 26 is the stereogram that is illustrated in the variation of the lapping liquid supply nozzle used in the grinding unit of lapping device shown in Figure 1.

Figure 27 is the top view that is illustrated in the variation of the lapping liquid supply nozzle used in the grinding unit of lapping device shown in Figure 1.

Figure 28 is the schematic diagram that is illustrated in the variation of the lapping liquid supply nozzle used in the grinding unit of lapping device shown in Figure 1.

Figure 29 is the schematic diagram that the lapping slurry feeding system in existing lapping device is shown.

Figure 30 is the schematic diagram that the related lapping slurry feeding system of the utility model is shown.

Figure 31 (a) and Figure 31 (b) are the schematic diagrames that is illustrated in the fluid pressure valve that lapping slurry feeding system shown in Figure 30 uses.

Figure 32 is the longitudinal section that the variation of apical ring shown in Figure 2 is shown.

Figure 33 (a) is the schematic diagram illustrated based on the planarization operation of the copper mosaic wiring of CMP to Figure 33 (c).

Figure 34 (a) is the schematic diagram that the state of excessive polishing is shown, and Figure 34 (b) illustrates the schematic diagram that grinds not enough state.

Figure 35 is the top view that carries out the lapping device that the grinding of semiconductor wafer used for the lapping liquid supply nozzle is swung.

Figure 36 (a) is the curve map that is illustrated in lapping device shown in Figure 35 the grinding rate that makes the semiconductor wafer after the lapping liquid supply nozzle swings, and Figure 36 (b) is the curve map that the grinding rate of the semiconductor wafer when the lapping liquid supply nozzle is swung is shown.

Figure 37 is the figure that the system architecture of lapping device and auxiliary equipment thereof is shown.

Figure 38 is the figure of structure that the lapping liquid feeder of lapping device of the present utility model is shown.

Description of reference numerals: 20 ... grinding unit; 22 ... grinding table; 24 ... apical ring; 26 ... the lapping liquid supply nozzle; 28 ... trimmer; 30 ... sprayer (fluid emitting mechanism); 52 ... grinding pad (abrasive cloth); 56,356 ... retaining ring; 57 ... the lapping liquid supply port; 58 ... eddy current sensor; 70 ... outer peripheral face; 72 ... inner peripheral surface; 74 ... groove; 80 ... output mechanism; 82 ... cover; 84 ... contact component; 86 ... gas emitting mechanism; 88 ... gas vent; 100 ... plectane; 116 ... disperse skirt; 120,122 ... dispersion plate; 124 ... slit; 210 ... the lapping liquid circulatory system; 212 ... the lapping liquid supply line; 300 ... pressing component; 302 ... guide member; 400 ... copper film; 402 ... barrier metal (barrier metal).

The specific embodiment

Below, referring to figs. 1 through Figure 38, the embodiment of the related lapping device of the utility model is elaborated.Wherein, in Fig. 1 to Figure 38, identical or suitable construction unit is marked to identical Reference numeral, and omit the explanation of its repetition.

Fig. 1 is the top view that an embodiment of the related lapping device of the utility model is shown.As shown in Figure 1, three wafer case 10 can be installed on to this lapping device.Along these wafer case 10, be provided with walking mechanism 12, above this walking mechanism 12, dispose the first transfer robot 14 that possesses a two manipulator.The manipulator of the first transfer robot 14 can be near (access) wafer case 10.

In addition, lapping device possesses four grinding units 20, and these grinding units 20 are arranged along the long side direction of device.At each grinding unit 20, possess: the grinding table 22 with abradant surface; For the apical ring 24 that keeps semiconductor wafer and semiconductor wafer is pressed on to grinding table 22 and grinds; For example, for grinding table 22 being supplied with to the lapping liquid supply nozzle 26 of lapping liquid, finishing liquid (water); For the trimmer 28 that grinding table 22 is repaired; And sprayer 30, this sprayer 30 makes liquid (for example pure water) and the fluid-mixing of gas (for example nitrogen) form vaporific and spray to abradant surface from one or more nozzles.

Near grinding unit 20, be provided with the first linear conveyor 32 and the second linear conveyor 34 along the long side direction transfer wafers, in wafer case 10 sides of this first linear conveyor 32, dispose and make the reverse engine 36 of reversing from the wafer that the first transfer robot 14 is accepted.

In addition, this lapping device possesses: second conveyor device people 38, make the reverse engine 40 of the wafer counter-rotating of accepting from second conveyor device people 38, four cleaning machines 42 that the semiconductor wafer after grinding is cleaned and the supply unit 44 of transfer wafers between reverse engine 40 and cleaning machine 42.Above-mentioned second conveyor device people 38, reverse engine 40 and cleaning machine 42 are along the long side direction arranged in series.

In such lapping device, the wafer in wafer case 10 is directed to each grinding unit 20 via reverse engine 36, the first linear conveyor 32, the second linear conveyor 34.Grinding wafers in each grinding unit 20.Wafer after grinding is directed to cleaning machine 42 and is cleaned herein via second conveyor device people 38 and reverse engine 40.Utilize the wafer after the first transfer robot 14 makes to clean to turn back to wafer case 10.

Fig. 2 is the longitudinal section that the part of grinding unit 20 is shown.As shown in Figure 2, the grinding table 22 of grinding unit 20 links with configuration motor 50 thereunder, as shown by arrows can be around its axle center rotation.In addition, the upper surface at grinding table 22 is pasted with the grinding pad (abrasive cloth) 52 with abradant surface.In addition, apical ring 24 links with apical ring axle 54, in the lower, outer perimeter section of apical ring 24, is provided with the retaining ring 56 of the outer peripheral edges that keep semiconductor wafer W.

In addition, motor 50 comprises that driving grinding table 22 carries out the driver part (not shown) of the horizontal vibration on certain horizontal cycle motion, certain orientation or any direction.By driving this driver part, can make apical ring and grinding table relatively carry out the horizontal vibration on certain horizontal cycle motion, certain orientation or any direction.In this case, along with relatively moving of common grinding object and abradant surface, can make the distribution of quantity delivered of the lapping liquid of supplying with to the face that is polished that grinds object more even.

Apical ring 24 links and links with lift cylinders (not shown) with motor (not shown).Thus, apical ring 24 can carry out as shown by arrows lifting and can rotate around its axle center, thereby can semiconductor wafer W be pressed on to grinding pad 52 with any pressure.

In the grinding unit 20 formed like this, make semiconductor wafer W be held in the lower surface of apical ring 24, utilize lift cylinders semiconductor wafer W to be pressed on to the grinding pad 52 of the upper surface of rotating grinding table 22.And, from the lapping liquid supply port 57 of lapping liquid supply nozzle 26, supply with lapping liquid Q towards grinding pad 52, thereby at lapping liquid Q, be present under the face that is polished (lower surface) and the state between grinding pad 52 of semiconductor wafer W, semiconductor wafer W is ground.

In addition, as shown in Figure 2, in the inside of grinding table 22, be embedded with the eddy current sensor 58 of the thickness of measuring semiconductor wafer W.Wiring 60 from eddy current sensor 58 is passed through in grinding table 22 and bolster 62, and is connected with controller 66 via the rotary connector (or collector ring) 64 of the axle head that is arranged at bolster 62.At this eddy current sensor 58, by during below semiconductor wafer W, can detect the thickness of conducting film of the copper film etc. on the surface that is formed at continuously semiconductor wafer W on by track.

Wherein, be accompanied by the requirement to the high speed more of semiconductor device, and research is formed the scheme of the dielectric film between the interior wiring of device by the less material of dielectric constant (such as the Low-k material etc.).Because such advanced low-k materials is Porous and has in the more crisp character of mechanical properties, therefore in the planarization grinding step of the copper mosaic wiring that has adopted the Low-k material, require to reduce for example to put on, below the pressure (grinding pressure) (being 13.79kPa(2psi) of the semiconductor wafer while grinding) as far as possible.

Yet generally, the grinding rate in grinding step depends on grinding pressure, rate also decreases if grinding pressure reduces grinding.Therefore when grinding copper, the defect descended in order to make up such grinding rate, adopt the lapping liquid that chemical action is stronger sometimes.In the situation that adopt so stronger lapping liquid of chemical action, if between lapping liquid and copper film, do not produce comparatively stable chemical reaction, can't obtain even and stable abrasive characteristic.Therefore in the grinding step that uses the lapping liquid that chemical action is stronger, expectation is more stably between grinding pad and semiconductor wafer, supplying with unreacted lapping liquid.

In the present embodiment, form groove by the retaining ring 56 at apical ring 24, can more stably between grinding pad 52 and semiconductor wafer W, supply with lapping liquid.Fig. 3 is the upward view of an example that the retaining ring 56 of Fig. 2 is shown.As shown in Figure 3, on the edge, bottom surface of retaining ring 56, circumferentially with equal intervals, be formed with a plurality of grooves 74 that its outer peripheral face 70 is communicated with inner peripheral surface 72.The direction of rotation that example shown in Figure 3 shows apical ring 24 is clockwise situation, and the outer circumferential side peristome 76 of each groove 74 is disposed in the clockwise direction (direction of rotation of apical ring 24) upper position more forward than inner peripheral surface side opening section 78.Utilize such groove 74 can be efficiently and stably between the semiconductor wafer W of the inboard of retaining ring 56 and grinding pad 52, supplying with lapping liquid.

Wherein, the aperture opening ratio of the outer circumferential side peristome 76 of above-mentioned groove 74 is decided by the intensity of the chemical action of lapping liquid, and it is made as approximately to 10%～50%.For example, in the situation that use certain lapping liquid, if aperture opening ratio is 0%, be difficult between grinding pad 52 and semiconductor wafer W, supplying with lapping liquid, thereby can't obtain enough grinding rates.On the other hand, for example, in the high situation of the aperture opening ratio of periphery side opening section 76 (surpassing 50% situation), the interim lapping liquid that enters the inboard of retaining ring 56 by groove 74 flows to the outside by other groove 74 again, makes lapping liquid be difficult to effectively be held between grinding pad 52 and semiconductor wafer W.Therefore if making the aperture opening ratio of outer circumferential side peristome 76 is about 10%～50% scope, can be effectively between grinding pad 52 and semiconductor wafer W, supplying with lapping liquid, thus can obtain stable grinding rate.If in addition the aperture opening ratio of outer circumferential side peristome 76 is made as to approximately 10%～50% scope, the lapping liquid of reacted inertia can be discharged to effectively to outside via groove 74.In addition, according to the aperture opening ratio of above-mentioned outer circumferential side peristome 76, set the size of each groove 74 and the spacing between groove 74.

Direction of rotation at apical ring 24 is in anticlockwise situation, as shown in Figure 4, can make groove 74 towards with Fig. 3 in towards the opposite.Perhaps, as shown in Figure 5, also can groove 74 be configured to equal intervals radial, thereby no matter apical ring 24 whichaways rotations can both be used this apical ring 24.In this case, as shown in Figure 6, can make interior all side openings section 78 of each groove 74 be greater than outer circumferential side peristome 76.

In addition, for the better effects if of the groove 74 that makes retaining ring 56, preferably, the rotating speed that makes apical ring 24 is below 1/1 with respect to the ratio of the rotating speed of grinding table 22, and more preferably, making this ratio is approximately 1/3～1/1.5.In this case, the direction of rotation of the direction of rotation of grinding table 22 and apical ring 24 can be equidirectional, or can be rightabout.By setting in the above described manner grinding table 22, make the lapping device running with the rotating speed of apical ring 24, can carry out the grinding that uniformity is more excellent.

That is, if the rotating speed of apical ring 24 is higher, lapping liquid is positioned at retaining ring 56 obstructions of the peripheral part of apical ring 24 towards the inflow between grinding pad 52 and semiconductor wafer W, thereby can't carry out the supply of efficient lapping liquid.If reduce the rotating speed of apical ring 24, can be via the above-mentioned groove that is formed at retaining ring 56 74 efficiently between grinding pad 52 and semiconductor wafer W, supplying with lapping liquid, thus can carry out the grinding that uniformity is more excellent.

Fig. 7 is the top view of part of the grinding unit 20 of schematically illustrated lapping device shown in Figure 1.As shown in Figure 7, sprayer 30 is disposed at the upstream side of the direction of rotation of grinding table 22 with respect to apical ring 24, as the fluid ejection mechanisms of the fluid-mixing towards grinding pad 52 jet cleaning liquid and gas and bring into play function.For example, the fluid-mixing of 52 injection nitrogen and pure water or liquid from sprayer 30 towards grinding pad.This fluid-mixing is sprayed towards grinding pad 52 under following state: the 1) state of liquid particle; 2) state of the fine-particle solid of liquid after solidifying; 3) state of the gasification after liquid evaporation (these states are become to vaporificization or atomization).

Like this, by under the state after vaporificization to grinding pad 52 jet mixing flow bodies, can utilize the gas in fluid-mixing and will fall into lapping liquid, the lapping rejects cleaning of the recess of grinding pad 52, and then can utilize the cleaning fluid of pure water, liquid etc. to rinse.Thus, can effectively the lapping liquid, the lapping rejects that are present on grinding pad 52 that become abrasive reason be removed.

Usually, in CMP, the abradant surface after the grinding residue of residual abrasive particle, lapping rejects (being copper complex in the process that copper is ground) etc. is present in grinding.If place these, grind residue no matter can become the reason that makes the grinding rate reduce by the galled spots of semiconductor wafer or because the chemical action of lapping liquid is suppressed in process of lapping after this.Therefore expectation does not make to grind residue as far as possible and residues in the abradant surface in process of lapping.Therefore in common CMP, in the interim between grinding, carry out followingly grinding the atomization that residue is removed from abradant surface: utilize trimmer to repair abradant surface, and utilize the fluid-mixing of sprayer to abradant surface jet cleaning liquid and gas.

As shown in Figure 7, dispose output mechanism 80 in the downstream of the direction of rotation of the grinding table 22 with respect to sprayer 30, this output mechanism 80 will be discharged from grinding grinding pad 52 from the fluid-mixing of sprayer 30 ejections.In addition, above sprayer 30 and output mechanism 80, be provided with the cover 82 that sprayer 30 and output mechanism 80 are covered.Preferably, adopt fluororesin etc. to have the material of the material of water proofing property as this cover 82.This cover 82 can be at the footpath of grinding table 22 upward opening.

Output mechanism 80 shown in Figure 7 possesses: the contact component 84 contacted with grinding pad 52 and the holding member (not shown) that keeps this contact component.As contact component 84, preferably adopt the parts that formed by the lower material of coefficient of friction to reduce wear extent, also preferably by the higher material of sealing (liquid-tight property), form above-mentioned contact component 84 in addition.In addition in this case, output mechanism 80 can possess the pressing mechanism (not shown) that contact component 84 or holding member are pressed, and controls based on the pressing force of this pressing mechanism and contact component 84 is contacted with grinding pad 52.As such pressing mechanism, can use cylinder mechanism, the ball screw framework of the pressure of the fluid that has utilized gas, water etc.

Yet in CMP in the past, if in process of lapping, carry out atomization, the concentration of lapping liquid changes because cleaning fluid is directed on abradant surface, thereby makes abrasive characteristic change, therefore in process of lapping, do not carry out atomization.According to present embodiment, utilize above-mentioned output mechanism 80 and in the future the cleaning fluid of blowing day with fog 30 be discharged at once the outside of grinding table 22.Therefore abradant surface can be remained to clean conditions, thereby can make the abrasive characteristic of lapping device stable.Like this, according to the lapping device of present embodiment, can in process of lapping, carry out the atomization (In-situ atomization) based on sprayer 30.

In addition, by the finishing based on trimmer 28 by process of lapping (In-situ finishing) and based on the atomization (In-situ atomization) of this sprayer 30, combine, and can in process of lapping, adjust grinding pad 52.Therefore the interval time between grinding can be shortened, thereby the working ability of device can be improved.

In addition, although contact component 84 upwards extends in the footpath of grinding table 22 in example shown in Figure 7, contact component 84 also can extend on the direction radially tilted with the angle (0 ° to 90 °) of stipulating with respect to grinding table 22.

In addition, also can replace above-mentioned contact component 84 or possess gas emitting mechanism on the basis of contact component 84, this gas emitting mechanism has towards the gas vent of grinding pad 52 ejection gases.Fig. 8 is the stereogram that such gas emitting mechanism 86 is shown.As shown in Figure 8, gas emitting mechanism 86 has: a plurality of gas vents 88 that spray the gas of dry airs, drying nitrogen etc. towards grinding pad 52; And the control part (not shown) of controlling spray volume, ejection pressure and the emission direction of the gas of ejection, the cleaning fluid of the day with fog of blowing in the future 30 is discharged to the outside of grinding table 22 by from this gas vent 88, spraying gases.In this case, preferably to form the such fan-shaped mode of gas curtain (air curtain), spray gas.In addition, also can form by the shape that makes gas vent 88 direction that slit-shaped is controlled ejection gas.

The output mechanism 80 that utilization has such gas emitting mechanism 86 also at once the cleaning fluid of the day with fog of blowing in the future 30 be discharged to the outside of grinding table 22.Therefore, abradant surface can be remained to clean conditions, thereby can make the abrasive characteristic of lapping device stable.

Yet, in LSI, because high speed, Highgrade integration, power reducing have been carried out in the miniaturization of wiring, thereby realized high-performance.For the miniaturization of wiring, substantially according to the prediction of ITRS (ITRS), carried out technological development on the whole.In addition, in the miniaturization of pursuing wiring, also developed to the conversion of the less Low-k material that copper connects up, dielectric constant is less of impedance, as the planarization operation, estimating can increase gradually for the demand of copper damascene planarized operation (copper CMP operation).

Herein, in copper damascene planarized operation, in the situation that realized the combination of Low-k material, Porous Low-k material, except being accompanied by miniaturization, need further to improve planarization characteristics the countermeasure of the situation of the destruction of generating material while also needing to consider to cause grinding for the mechanical strength because of these materials is lower.

In order to solve these problems, considered the technology of reduction machined surface pressure (grinding pressure).In common copper CMP, after having formed copper complex, by this copper complex is mechanically removed and ground.Yet, for the lapping liquid using in common CMP device, because formed copper complex formazan intensity is higher, if therefore reduce grinding pressure, meanwhile also exist and cause the grinding rate to reduce such problem.

Even developed recently, also can mechanically have been removed under the lower condition of grinding pressure, formed the lower copper complex formazan lapping liquid of mechanical strength.Because the chemical reactivity of such lapping liquid is stronger, the quantity delivered of the lapping liquid of therefore supplying with towards the face that is polished of semiconductor wafer and the supplying with impact that grinding rate, the uniformity of grinding rate in being polished face are caused that distributes is larger.

In CMP device in the past, because a lapping liquid supply port from fixing is supplied with lapping liquid, therefore the distribution with respect to the quantity delivered of the lapping liquid of the face that is polished of semiconductor wafer produces deviation, makes the uniformity variation of grinding rate in being polished face.This phenomenon is in the situation that the relative velocity between abradant surface and semiconductor wafer is higher particularly remarkable.Also make in addition the quantity delivered of the lapping liquid of waste increase, thereby promoted the grinding cost.Therefore how evenly and efficiently the face that is polished of semiconductor wafer to be supplied with to lapping liquid very important.

In the present embodiment, the lapping liquid supply port 57(by making lapping liquid supply nozzle 26 in process of lapping is with reference to Fig. 2) mobile and evenly and efficiently the face that is polished of semiconductor wafer is supplied with to lapping liquid.That is, as shown in Figure 1, the lapping liquid supply nozzle 26 in present embodiment can be rotated centered by axle 27, in process of lapping, utilizes slew gear (travel mechanism) to make 26 revolutions of lapping liquid supply nozzle.

Although 52 supply with lapping liquid from lapping liquid supply nozzle 26 towards grinding pad, towards the lapping liquid of supplying with on this grinding pad 52 along with relatively moving and supplied with by the face that is polished towards semiconductor wafer between apical ring 24 and grinding table 22.As mentioned above, in process of lapping, make 26 convolutions of lapping liquid supply nozzle, and make to be in the lapping liquid supply port 57(of its front end with reference to Fig. 2) mobile, lapping liquid suitably is distributed on grinding pad 52, thereby is accompanied by relatively moving and spread all over equably whole of semiconductor wafer between apical ring 24 and grinding table 22 towards the lapping liquid of supplying with on grinding pad 52.

Like this, according to the lapping liquid supply nozzle 26 in present embodiment, can make the distribution of the quantity delivered of the lapping liquid of supplying with towards the face that is polished of semiconductor wafer become even.Therefore can improve the grinding rate and improve the uniformity of grinding rate in being polished face.In addition due to the supply that has realized efficient lapping liquid, therefore can reduce the use amount of lapping liquid, eliminate the waste of lapping liquid and reduce the grinding cost.

In the present embodiment, the example that makes the movement that lapping liquid supply nozzle 26 circles round in the mode of depicting circular arc is illustrated, but is not limited to this.For example can make lapping liquid supply nozzle 26 carry out traveling priority, it is rotated and moves, swing mobile, the round movement.In addition, can make the translational speed of lapping liquid supply nozzle 26 in moving process, keep constant and (for example, 50mm/s), or make its variation.The amount that makes the lapping liquid of supplying with from lapping liquid supply port 57 changes moving process liquid measure controlling organization can be set in addition.In addition, preferably, the scope of scanning of lapping liquid supply port 57 is made as in the radius that is in grinding table 22 and covers the scope of the diameter of semiconductor wafer.

In addition, in example shown in Figure 1, although lapping liquid supply nozzle 26 is along the radially extension of grinding table 22, as shown in Figure 9, lapping liquid supply nozzle 26 also can extend on the direction radially tilted with the angle (0 ° to 45 °) of stipulating with respect to grinding table 22.

Usually, in CMP, although the chemistry by being held in the lapping liquid on grinding pad and mechanism and semiconductor wafer is ground, the maintenance dose of the lapping liquid of grinding pad in the past is less, therefore makes most lapping liquid not be used but is discharged to outside from grinding pad.Because the lapping liquid price is very expensive, this can make a big impact to grinding cost, therefore in order to reduce the service efficiency of grinding cost and needing to improve lapping liquid.

In addition, below grinding pressure lower (6.89kPa(1psi)) and the process of lapping of relative velocity higher (more than 2m/s) in, at lapping liquid, under the condition of the liquid film increase of abradant surface, can between semiconductor wafer and abradant surface, produce and float by water the slip that phenomenon causes.This phenomenon is obvious especially in following situation, that is: in the situation that abradant surface be formed with the groove of the concentric circles that sectional area is less or a bit towards abradant surface, supply with lapping liquid etc. and lapping liquid is inhomogeneous to the supply of abradant surface from the center of grinding table.If produce such water, float phenomenon, due to grinding pressure, do not act between semiconductor wafer and abradant surface, therefore make the grinding rate decrease.On the other hand, if from the milling area polar region, discharge lapping liquid, abradant surface reduces the confining force of lapping liquid, thereby makes the grinding rate reduce, and makes the service efficiency of lapping liquid descend.Therefore expectation is held in abradant surface by appropriate lapping liquid and on abradant surface, forms grinding liquid film uniformly.

In order to meet this expectation, in the present embodiment, on the surface of grinding pad 52, having formed sectional area is 0.38mm ²Above groove.Figure 10 is the stereogram that grinding pad 52 is shown, and Figure 11 is the amplification view of Figure 10.As shown in figure 10, a plurality of circular troughs 90 form concentric circles on the surface of grinding pad 52, the spacing P that groove is 90 ₁(with reference to Figure 11) is for example 2mm.In example shown in Figure 11, the width W of groove 90 ₁For 0.5mm, depth D ₁For 0.76mm, the sectional area of groove 90 is 0.38mm ².In addition preferably, the degree of depth of groove 90 is set as to the degree of depth that is greater than existing groove, for example, more than being made as 1mm.

In addition, as shown in figure 12, can form the stria 92 of the linearity that the groove of concentric circles 90 is connected with groove 90.Because making lapping liquid, this stria 92 is difficult to be subject to centrifugal force.Preferably, stria 92 forms with respect to the groove of circumferencial direction with the angle inclination of regulation, for example, will be made as with respect to the tilt angle alpha of circumferencial direction 30 °, by the spacing P of 92 of strias ₂Be made as 2mm.In addition, preferably, the width of this stria 92 is made as to 30% left and right of the width of groove 90.

Although in the present embodiment the example that forms the groove 90 of concentric circles at grinding pad 52 is being illustrated, the shape of groove 90 is not limited to this.For example, can form the spiral helicine groove with above-mentioned sectional area on the surface of grinding pad 52.If form for example, with respect to the angle of normal direction invariable (45 °) spiral helicine groove, can utilize constant centrifugal force and lapping liquid is discharged.

In addition, except above-mentioned groove 90 or replace groove 90, can form aperture areas at grinding pad 52 be 2.98mm ²Above a plurality of holes (hole that diameter 1.95mm is above).Like this, form a plurality of holes with larger aperture area by the surface at grinding pad 52, thereby can increase the maintenance dose of the lapping liquid on abradant surface, can improve the service efficiency of lapping liquid.The aperture area in such hole is preferably 3.14mm ²More than (diameter 2mm), 19.63mm more preferably ²More than (diameter 5mm).In addition, the shape in hole can form circle, ellipse, and hole can be configured to concentric shape, staggered, clathrate etc.

Wherein, except preparing groove or having the hole of the bore of size to a certain degree, also adopt the material of the material of Porous as grinding pad, or adopt the material of the pore of the such connection with degree that lapping liquid can pass through of Figure 11 c, that is, grinding pad can have cavernous surface.And then, as shown in Figure 11 b, can also be by groove, the hole with big or small to a certain degree bore and the combination of cavernous surface.Like this, at grinding pad upper surface Existential Space, when semiconductor wafer is ground, just the thickness of grinding liquid film that has solved the semiconductor wafer lower surface is upwards non-constant or form intermittently the problem of liquid film in the wafer footpath, and the grinding liquid film of semiconductor wafer lower surface can be formed uniformly.

Wherein, groove, the hole, the cavernous surface that have to a certain degree a bore of size can also be made as to the path of the supply lapping liquid is connected with the lapping liquid generator, control thus so that thinner or do not have a partial product polar region supply lapping liquid of liquid film to the liquid film of semiconductor wafer lower surface.

Wherein, the CMP operation mainly comprises: (1) presses on grinding pad by semiconductor wafer, on one side grinding pad is supplied with to the main grinding step that slurry is ground semiconductor wafer on one side; (2) slurry is replaced as to water after the grinding semiconductor chip and semiconductor wafer is ground to the water polishing operation of (cleaning).In (1) described main grinding step, by grinding, the unnecessary membrane material on the surface of semiconductor wafer is removed, in (2) described water polishing operation, to the slurry on the surface that is attached to semiconductor wafer, grind product and clean and be removed.

As mentioned above, be accompanied by the miniaturization of Wiring structure and require the dielectric film that insulating properties is higher, as the material of the higher film of insulating properties, although enumerated Porous Low-k material etc. as candidate materials, the mechanical strength of these materials is extremely low.So the grinding pressure in CMP device in the past is that 13.79kPa～34.47kPa(2psi～5psi), still requirement later is made as 13.79kPa(2psi by this pressure) below, and then be made as 6.89kPa(1psi) below.

Like this, in the situation that the semiconductor wafer that comprises the Low-k material is ground, need to for example, with lower grinding pressure (3.45kPa(0.5psi)) grind.In this case, need to carry out main grinding step and water polishing operation to hang down grinding pressure, if but to hang down grinding pressure, carrying out the water polishing operation, sometimes the attachments such as slurry can't be removed fully, make these attachments residue in the surface of semiconductor wafer.

Therefore, carry out as follows in the present embodiment the water polishing operation.With after hanging down grinding pressure and having carried out main grinding step, with with main grinding step in grinding pressure be equal to or under it pressure presses on grinding pad 52 by semiconductor wafer, making linear velocity is more than 1.5m/s, more than being preferably 2m/s, more preferably, more than 3m/s, make grinding table 22 rotations.Flow with 1l/min is supplied with pure water (DIW) and carries out water polishing on grinding pad 52.Suitable cleaning is carried out on the surface of the wafer after can grinding low pressure thus.Perhaps also can supply of chemical carry out the liquid polishing to replace pure water (DIW), such as the promotion that can supply with citric acid solution etc., be attached to the liquid of disengaging of the slurry of wafer surface.In addition, even compare with normal conditions, the time of matting is for example postponed to 20 seconds, also can obtain same effect in 10 seconds, but in this case, because meeting reduces working ability, therefore preferably in the situation that above-mentioned High Rotation Speed carries out water polishing or liquid polishing.

In the above-described embodiment, although the example that the lapping liquid supply port 57 of the front end from being arranged at lapping liquid supply nozzle 26 is supplied with to lapping liquid is illustrated, the form of lapping liquid supply nozzle 26 is not limited to this.For example, as shown in figure 13, can also use the lapping liquid supply nozzle 26a that possesses the plectane 100 that is formed with lapping liquid supply port 57 and the arm 102 that this plectane 100 is installed.In this case, can only make the mode of plectane 100 rotations supply with lapping liquid not make arm 102 revolutions, also can be so that arm 102 turns round and make the mode of plectane 100 rotations supply with lapping liquid.In addition, can make arm 102 carry out traveling priority.And then, the translational speed of lapping liquid supply port 57 is changed in moving process, that is, the translational speed of arm 102 and/or the rotary speed of plectane 100 are changed in moving process.In addition, the amount that makes the lapping liquid of supplying with from lapping liquid supply port 57 changes moving process liquid measure controlling organization can be set.

In addition, as shown in figure 14, can also use the lapping liquid supply nozzle 26b with a plurality of lapping liquid supply ports 57.In this case, can make lapping liquid supply nozzle 26b turn round mobile, traveling priority, it is rotated and moves, swing mobile or come and go mobile.In addition, the translational speed of lapping liquid supply nozzle 26b is changed in moving process.The liquid measure controlling organization of the amount of controlling independently respectively the lapping liquid of supplying with from each lapping liquid supply port 57 can be set in addition.And then, can also change the aperture of each lapping liquid supply port 57.The aperture that for example, can constitute lapping liquid supply port 57 reduces along with the trend radially inner side.In addition, in example shown in Figure 14, although lapping liquid supply nozzle 26b upwards extends in the footpath of grinding table 22, but as shown in figure 15, lapping liquid supply nozzle 26 is extended on the direction radially tilted with the angle (0 ° to 45 °) of stipulating with respect to grinding table 22.

In addition, the lapping liquid supply nozzle is moved, but the lapping liquid supply port is moved in the lapping liquid supply nozzle.For example, as shown in figure 16, can also use the lapping liquid supply nozzle 26c with the lapping liquid supply port 57a that can move in inside.In example shown in Figure 16, although make lapping liquid supply port 57 carry out traveling priority, be not limited to this.For example, lapping liquid supply port 57 is turned round mobile, it is rotated and moves, swing mobile or come and go mobile.In this case, the mode that can lapping liquid supply port 57a be moved not make lapping liquid supply nozzle 26c revolution is supplied with lapping liquid, also can be so that lapping liquid supply nozzle 26c revolution and mode that lapping liquid supply port 57a is moved are supplied with lapping liquid.In addition, the translational speed of lapping liquid supply port 57a is changed in moving process.In addition, the amount that makes the lapping liquid of supplying with from lapping liquid supply port 57a changes moving process liquid measure controlling organization can be set.And then, as shown in figure 17, a plurality of lapping liquid supply nozzle 26c shown in Figure 16 can be set.

In addition, as shown in figure 18, can also use the lapping liquid supply nozzle 26d that possesses the plectane 100 that is formed with a plurality of lapping liquid supply ports 57 and supply the arm 102 of these plectane 100 installations.In this case, can only make the mode of plectane 100 rotations supply with lapping liquid not make arm 102 revolutions, also can be so that arm 102 turns round and make the mode of plectane 100 rotations supply with lapping liquid.In addition, can make arm 102 carry out traveling priority.And then, the translational speed of lapping liquid supply port 57a is changed in moving process, that is, the translational speed of arm 102 and/or the rotating speed of plectane 100 are changed in moving process.The liquid measure controlling organization of respectively amount of the lapping liquid from each lapping liquid supply port 57 supplies being controlled can also be set.And then, can change the aperture of each lapping liquid supply port 57.The aperture that for example, can be constructed so that lapping liquid supply port 57 reduces along with the trend radially inner side.In addition, although in example shown in Figure 180, lapping liquid supply port 57 is disposed on same circumference, but also can on a plurality of circumference, lapping liquid supply port 57 be configured to concentric shape, or by lapping liquid supply port 57 configuration point-blank, on many straight lines.

In addition, as shown in figure 19, can also adopt the lapping liquid supply nozzle 26e that possesses the hollow roller 104 that is formed with a plurality of lapping liquid supply ports 57.This roller 104 constitutes and can centered by the parallel rotating shaft in the surface with respect to grinding table 22, be rotated.Lapping liquid supply port 57 can be configured to linearity, or can be configured to helical form, or can at random configure.In this case, while can make roller 104 rotations supply with lapping liquid, while also can make roller 104 revolutions and rotation supply with lapping liquid.And then, the translational speed of lapping liquid supply port 57 is changed in moving process, that is, the rotating speed of roller 104 and/or speed of gyration are changed in moving process.The liquid measure controlling organization of respectively amount of the lapping liquid from each lapping liquid supply port 57 supplies being controlled can also be set.And then, can change the aperture of each lapping liquid supply port 57.The aperture that for example, can be constructed so that lapping liquid supply port 57 reduces along with the trend radially inner side.In addition, roller 104 can be divided into to a plurality of zones, so that the lapping liquid of supplying with is according to the difference of the position of roller 104 on long side direction and difference.And then, although the roller 104 of lapping liquid supply nozzle 26e upwards extends in the footpath of grinding table 22 in example shown in Figure 19, roller 104 also can extend on the direction radially tilted with the angle (0 ° to 45 °) of stipulating with respect to grinding table 22.

In addition, as shown in figure 20, can also adopt and possess the lapping liquid supply nozzle 26f be formed with as the roller 104 of the slit 106 of lapping liquid supply port.In this case, while can make roller 104 rotations supply with lapping liquid, while also can make roller 104 revolutions and rotation supply with lapping liquid.And then, the rotating speed of roller 104 and/or speed of gyration are changed in moving process.In addition, the liquid measure controlling organization that the amount of the lapping liquid from slit 106 supplies is controlled can also be set.And then, the A/F of slit 106 is changed according to position.The A/F that for example, can be constructed so that slit 106 reduces along with the trend radially inner side.In addition, roller 104 can be divided into to a plurality of zones, so that the lapping liquid be supplied to is according to the difference of the position of roller 104 on long side direction and difference.And then, although the roller 104 of lapping liquid supply nozzle 26f upwards extends in the footpath of grinding table 22 in example shown in Figure 20, roller 104 also can extend on the direction radially tilted with the angle (0 ° to 45 °) of stipulating with respect to grinding table 22.

In addition, in example shown in Figure 20, although spiral helicine slit 106 is formed at roller 104, also can adopt the slit of linearity.Figure 21 is the stereogram that the lapping liquid supply nozzle 26g of the slit that is formed with linearity is shown, and Figure 22 is the longitudinal section of Figure 21.As shown in figure 22, lapping liquid supply nozzle 26g possesses: the pressure retaining parts 110 that has balancing gate pit 108 in inside; And the slit portion 114 that is formed with the slit 112 extended from pressure retaining parts 110 towards below.This pressure retaining parts 110 is adjusted from the flow of the lapping liquid Q of slit 112 discharges by the pressure of controlling the lapping liquid Q that balancing gate pit 108 is supplied with.Because slit 112 forms linearity, so lapping liquid Q is sprayed on width equably from slit 112.In addition, as shown in figure 23, balancing gate pit 108 can also be divided into to a plurality of chambers and make the changes in flow rate of the lapping liquid Q that each chamber is supplied with, in flow different mode on width, spray lapping liquid thus.In addition, Figure 21 and lapping liquid supply nozzle 26g shown in Figure 22 can be along the radial arrangement of grinding table 22, or can on the direction tilted with the angle (0 ° to 45 °) of regulation with respect to grinding table 22, configure.

In addition, can also utilize lapping liquid supply nozzle 26h shown in Figure 24 and make the lapping liquid dispersion of supplying with on grinding pad 52.This lapping liquid supply nozzle 26h possesses the dispersion plate (disperseing skirt (skirt)) 116 that makes the fan shape of disperseing from the lapping liquid Q of lapping liquid supply port 57 ejection.According to this lapping liquid supply nozzle 26h, can make towards multiple directions, to disperse in the lapping liquid Q of lapping liquid supply port 57 ejection is during disperseing that skirt 116 flows, and under the state after this disperses to grinding pad 52 supply lapping liquids.Can disperse skirt 116 to form groove or the stop member flowed that limits lapping liquid is being set.In addition, also can make to disperse the surface of skirt 116 to become coarse and increase impedance.As the material of disperseing skirt 116, preferably adopt fluororesin etc. to have the material of drug resistance.In addition as shown in figure 25, can will disperse skirt 116 to be installed on lapping liquid supply nozzle 26g shown in Figure 21.

In addition, can also utilize lapping liquid supply nozzle 26i as shown in Figure 26 and make the lapping liquid dispersion of supplying with on grinding pad 52.This lapping liquid supply nozzle 26i possesses: discoideus nozzle body 118 and be installed on the dispersion plate 120 of the lower surface of nozzle body 118.Lapping liquid is supplied with on grinding pad 52 via the through hole (not shown) of the central part that is formed at nozzle body 118 and dispersion plate 120.The lower surface of dispersion plate 120 is formed by the resistant material of tool.According to this lapping liquid supply nozzle 26i, can make from lapping liquid supply port 57 towards grinding pad 52 lapping liquids of supplying with till the outside that flows to dispersion plate 120 during in, from the lower surface of dispersion plate 120, disperse towards multiple directions.As the material of dispersion plate 120, preferably adopt fluororesin etc. to have the material of drug resistance.

In addition, as shown in figure 27, at the direction of rotation upstream side of the grinding table 22 with respect to lapping liquid supply nozzle 26, can also be by dispersion plate 122(contact component contact with grinding pad 52 be set) make towards the lapping liquid dispersion of supply on grinding pad 52.Utilize this dispersion plate 122 and make from the lapping liquid Q that lapping liquid supply nozzle 26 is supplied with to spread diametrically, thereby the lapping liquid on grinding pad 52 is evenly distributed.Preferably, such as the elastomer that is had wearability by fluororesin etc., form this dispersion plate 122.In addition, dispersion plate 122 can be along the radial arrangement of grinding table 22, or can be along the direction configuration of radially tilting with the angle (0 ° to 45 °) of regulation with respect to grinding table 22.And then, can make in advance dispersion plate 122 static, also can make dispersion plate 122 turn round mobile, traveling priority or be rotated mobile, swing mobile, come and go mobile.In this case, the translational speed of dispersion plate 122 is changed in moving process.In addition, as shown in figure 28, a plurality of slits 124 can be arranged to dispersion plate 122 and via slit 124, lapping liquid Q be disperseed.Preferably, can adjust by gate etc. the size (width of slit 124, highly, spacing) of this slit 124.

In addition, in the situation that used Fig. 9 and from Figure 13 to lapping liquid feed unit shown in Figure 28, preferably as shown in figure 10 to make flute profile become the grinding pad of concentric circles such, make grinding pad 52 upwards form a plurality of zones after cutting apart in the footpath of grinding pad 52.By using such grinding pad, the lapping liquid of supplying with can be not mixed on grinding pad, but be held in each cut zone, and towards the face that is polished of semiconductor wafer, supply with efficiently under this state.

Yet, in existing CMP device, when being provided with a plurality of lapping liquid supply port, as shown in figure 29, outer setting at CMP device 500 has 502, one lapping liquid supply lines 504 of the lapping liquid circulatory system of large flow to be connected with the lapping liquid circulatory system 502 from CMP device 500.Therefore, the quantity delivered of the lapping liquid of supplying with from each lapping liquid supply port is easy to produce difference because of the difference of the shape of lapping liquid supply nozzle, in order to supply with equably lapping liquid, need to adjust or arrange valve to each lapping liquid supply port.

In the present embodiment, as shown in figure 30, the lapping liquid circulatory system 210 of the large flow that comprises lapping liquid case 202, force lift 204, back pressure pump 206 and pipe arrangement 208 is arranged in the outer setting of lapping device 200.Many lapping liquid supply line 212 extends from each lapping liquid supply port 57, and these lapping liquid supply lines 212 directly are connected with the pipe arrangement 208 of the lapping liquid circulatory system 210.By forming such structure, can supply with equably lapping liquid towards semiconductor wafer, thereby can improve the grinding rate, make the uniformity of grinding rate in being polished face significantly improve.

As shown in figure 30, be provided with fluid pressure valve 214 as the flow rate regulating valve of adjustment from the flow of the lapping liquid of lapping liquid supply port 57 supplies at each lapping liquid supply line 212 herein.As shown in Figure 31 (a) and Figure 31 (b), this fluid pressure valve 214 has pipe compression unit 216, and this pipe compression unit 216 utilizes the pressure extrusion of fluid to have the pipe 212a on flexible lapping liquid supply line 212 and caliber is dwindled.This pipe compression unit 216 is configured to pipe 212a is surrounded.As shown in Figure 31 (b), utilize fluid pressure to make to manage 212a and dwindle, reduced thus the flow of the lapping liquid Q flowed in pipe 212a.Because this fluid pressure valve 214 utilizes fluid pressure to make to manage 212a, dwindle, therefore can prevent from managing the wearing and tearing of 212a.

And then, as shown in figure 37, supply with the lapping slurry feeding system of the present utility model (lapping liquid feed unit) 1010 of lapping liquid, the exhaust treatment unit 1111 that carries out the discharge opeing processing unit 1112 of discharge opeing processing and carry out pump-down process is connected with lapping device 20.

As shown in figure 38, lapping slurry feeding system 1010 possesses: the stoste case 1011 of accumulating lapping liquid stoste A; The first adjusting tank 1012, it is by adding pure water B the lapping liquid that is mixed into the concentration more than working concentration from the lapping liquid stoste A of above-mentioned stoste case 1011; The second adjusting tank 1013, it is by adding pure water B the lapping liquid of above-mentioned the first adjusting tank 1012 and at any time lapping liquid is mixed into to the lapping liquid with working concentration; Circulating box 1014, it supplies with the lapping liquid of above-mentioned the second adjusting tank 1013 to lapping device 20, or makes lapping liquid roundabout circulation in this lapping device 20.

At the first adjusting tank 1012, the second adjusting tank 1013 and circulating box 1014 are respectively arranged with possesses cooling coil 1015, 1016, 1017 and the attemperator 1019 of temperature sensor, 1020, 1021,

attemperator

1019, 1020, 1021 utilize respectively temperature sensor to detect the lapping liquid temperature in each case, to

valve

1022, 1023, 1024 control, control from the cooling medium of cooling unit 1018 with respect to cooling coil 1015, 1016, 1017 outflow and inflow, and control with by the first adjusting tank 1012, the lapping liquid temperature of the second adjusting tank 1014 and circulating box 1014 remains on the temperature of regulation.In addition, at the first adjusting tank 1012, the second adjusting tank 1014 and circulating box 1014, be respectively arranged with

mixer

1035,1036,1037.

At the first adjusting tank 1012, be provided with low level detector 1025 and the high level detector 1026 of the level height that detects lapping liquid, if low level detector 1025 detects low-level height, pump 1034 driven and supply with lapping liquid stoste A from stoste case 1011, and by valve 1035, supply with pure water B, thereby lapping liquid is mixed into to normal concentration (more than the concentration of using).In addition, if the lapping liquid level height rises and make high level detector 1026 carry out work, pump 1034 is stopped, and stop supplying with pure water B.Thus, the lapping liquid level height of the first adjusting tank 1012 is maintained between low level detector 1025 and high level detector 1026.

At the second adjusting tank 1013, be provided with low level detector 1027, high level detector 1028 and the superelevation level height detector 1029. of the level height that detects lapping liquid, if low level detector 1027 is carried out work, valve 1038 and valve 48 are opened, from the first adjusting tank 1012, supply with lapping liquid and supply with pure water B, thereby lapping liquid is mixed into to working concentration.If the lapping liquid level height rises, make high level detector 1028 carry out work, valve 1038 and valve 48 are closed and stop supplying with lapping liquid and pure water B.In high level detector 1028, do not carry out work in emergency circumstances, prevent overflow with superelevation level height detector 1029.

At circulating box 1014, be provided with ultra low levels height sensor 1030, low level detector 1031, high level detector 1032 and the superelevation level height detector 1033 of the level height that detects lapping liquid.Generally, if low level detector 1031 is carried out work, valve 1039 is opened and supplied with lapping liquids from the second adjusting tank 1013, if high level detector 1032 is carried out work, valve 1039 cuts out and stop supplying with lapping liquid.At low-level height 1031, do not carry out work and make the abnormal low in emergency circumstances use ultra low levels height sensor 1030 of lapping liquid level height, in emergency circumstances with superelevation level height detector 1033, prevent overflow what high level detector 1032 was not carried out work.

Lapping device 20 possesses with the grinding table 22 and the apical ring 24 that are rotated of rotating speed independently separately, by polishing object (not shown) being clipped between this grinding table 22 and apical ring 24 and the surface of polishing object is ground.Make lapping device 20 running during in valve 1043 is opened and valve 1044 is cut out, and driving pump 1045 and supply with the interior lapping liquid of circulating box 1014 towards the upper surface of grinding table 22.And, towards discharge opeing case 1047, supply with by valve 1046 from the lapping liquid of finishing using of grinding table 22.In addition, the running that makes lapping device 20 stop during in, valve 1043 cut out and valve 1044 opened, and utilizing pump 1045 that lapping liquid is circulated by valve 1044.

At discharge opeing case 1047, be provided with low level detector 1049, high level detector 1050 and superelevation level height detector 1051, generally, if high level detector 1050 is carried out work, valve 1053 is opened, and the driving pump 1054 and lapping liquids of finishing using in discharge opeing case 1047 are transported to discharge opeing processing unit 1112.If the lapping liquid level height reduces, make low level detector 1049 carry out work, valve 1053 cuts out and pump 1054 is quit work, thereby stop the discharge of lapping liquid.

Blending, the blending of the lapping liquid in the second adjusting tank, the lapping liquid of the lapping liquid that supply, first adjusting tank 1012 of stoste lapping liquid A from above-mentioned stoste case 1011 to the first adjusting tank 1012 is interior all carry out automatically to the supply of circulating box 1014.Therefore by advance that concentration is higher stoste, be input to stoste case 1011, can without manually-operated, supply with to lapping device 20 lapping liquid that is mixed into working concentration for a long time.In addition, in the situation that lapping device 20 shuts down, make the lapping liquid circulation via pump 1045 and valve 1044.

Wherein, the retaining ring of apical ring is carried out (1) to the maintenance of the periphery edge of grinding object (semiconductor wafer) and (2) control to the grinding profile that is polished object by pressing abradant surface (grinding pad).Under the lower state of abradant surface pressure, when using in the situation that has formed the copper complex formazan lapping liquid that mechanical strength is lower as described above, retaining ring just can limit to unnecessary the pressing of abradant surface the speed that lapping liquid is supplied with towards the surface of grinding object.Therefore, press load less be advisable of retaining ring to abradant surface.Yet, if the press load of retaining ring is less, grinds object and easily from apical ring, fly out.Therefore, even demand also can prevent from grinding the retaining ring that object flies out under the lower state of the press load of retaining ring.

In order to meet this demand, shown in figure 32, can adopt following retaining ring 356, this retaining ring 356 constitutes and comprises: pressing component 300, it is pressed grinding pad 52 and adjusts the contact condition between semiconductor wafer W and grinding pad 52; And the guide member 302 of ring-type, it flies out from apical ring 24 be used to preventing semiconductor wafer W.Guide member 302 is configured to more lean on radially inner side than pressing component 300,, is configured in the position near semiconductor wafer W that is.By using this retaining ring 356, even in the situation that grinding pressure is less, also can prevents that semiconductor wafer W from flying out from apical ring 24, and can control the grinding profile of semiconductor wafer W.

In addition, guide member 302 can utilize screw, cylinder and in the enterprising line position adjustment of above-below direction, thereby can adjust its height apart from the surface of grinding pad 52.In addition, preferably, the radial width of guide member 302 is made as below 6mm, and forms guide member 302 by the material that hardness is less than the hardness of semiconductor wafer W.

In the manufacturing process of semiconductor device, although in the planarization operation of the copper mosaic wiring based on CMP, retain the copper film of wiring portion, incite somebody to action until the copper film of the part on barrier metal is removed fully, but generally, as Figure 33 (a) to as shown in Figure 33 (c), to comprise following operation until the operation that the copper film of the part on barrier metal is removed fully constitutes: remove the major part of initial copper film 400 rapidly (1), and make the poor mitigation of initial ladder, thereby the first operation of residual a little copper film 400a (a large amount of (bulk) copper grinding steps, Figure 33 (a) is to the operation of Figure 33 (b)), with for remaining copper film 400a, retain wiring portion 400b copper film and will be until the second operation that the copper film of the part on barrier metal 402 is removed fully (copper clearing process, Figure 33 (b) is to the operation of Figure 33 (c)).

In a large amount of copper grinding steps, make as much as possible the poor mitigation of initial ladder (planarization), and attenuate copper film 400a as much as possible, and can alleviate the burden in the copper clearing process by retaining copper film equably.For example, the thickness of implementing the later residual copper film 400a of a large amount of copper grinding steps is ground to 100nm～150nm left and right, preferably is ground to below 100nm, and preferably the scope of thickness is set as to left and right below 50nm.In addition, generally in the copper clearing process, copper is removed to later depressed part (dishing) 410, wear (erosion) 412 and reduced grinding pressure and grind in order to suppress such shown in Figure 34 (a).

In existing CMP device, according to the information of the thickness of a certain specific location in wafer surface, decide the moment of switching process herein.Due to the impact ground that is not subjected in the method the film thickness distribution in process of lapping, determine the moment of switching, even therefore for example in the situation that the grinding profile variation is just carried out the switching of operation as long as the thickness of the position on measured wafer reaches setting.

Even be present in other positions in the situation that with measured position, compare the part that the thickness of remaining film is very thick, as shown in Figure 34 (b), also likely after finishing, follow-up copper clearing process produces the residual fraction 414 of copper film.In addition, on the contrary, be present in other positions in the situation that with measured position, compare the part that the thickness of remaining film is very thin, as shown in Figure 34 (a), also likely in this position, produce depressed part 410, wear 412.

In order to prevent such problem, can adopt following method.That is, preset the film thickness distribution of the copper film while shifting from a large amount of copper grinding steps to the copper clearing process and it is pre-stored within to storage device.In a large amount of copper grinding steps, utilize eddy current sensor 58(with reference to Fig. 2) obtain the film thickness distribution information of the copper film of semiconductor wafer.The film thickness distribution of utilizing simulation software to obtain utilizing eddy current sensor 58 in predefined film thickness distribution and process of lapping within moment compares, and forms the emulation of the required grinding condition of the film thickness distribution of setting.Based on the grinding condition obtained by emulation, carry out controlling so that film thickness distribution becomes the film thickness distribution set based on the profile of apical ring 24.For example, control with the zone for amount of grinding deficiency in current residual film distribution and improve the grinding rate.By this profile, control, result makes the residual film of copper that will carry out before the copper clearing process become evenly, or makes its film thickness distribution become the film thickness distribution of predesignating.And, when actual film thickness distribution is consistent with the film thickness distribution set, be switched to the copper clearing process from a large amount of copper grinding steps.

Utilize this method can monitor actual grinding shape (film thickness distribution), and can obtain reliably and finally want the film thickness distribution realized.Namely, owing to can with required film thickness distribution, carrying out the switching from a large amount of copper grinding steps to the copper clearing process all the time, therefore can not be subjected to a large amount of copper grinding steps operation change (change of grinding rate, grind the change of profile) impact and under fixing condition, start to carry out the copper clearing process all the time.Therefore, the burden of the copper clearing process as subsequent handling can be suppressed to bottom line.This not only helps to be suppressed at the copper clearing process and produces depressed part 410, wear 412 later, also helps to shorten the time (suppressing the overmastication time) of copper clearing process, and then can also boost productivity and cutting down cost.

In wiring, form in operation, when the conducting film on semiconductor wafer grinds, existing flaw while grind finishing (for example the residual fraction 414 of conducting film on semiconductor wafer surface, scratch section, pit (pit) 416(are with reference to Figure 34 (a) and Figure 34 (b))) not only follow-up wiring is formed to operation and impact, also the electrical characteristics of the circuit of final formation exerted an influence and make electric properties deteriorate.Therefore, be desirably in while grinding end and eliminate these flaws.

In CMP, residual fraction for conducting film, although also by grinding (excessive polishing), form the film of the above degree of initial film and the residual fraction of conducting film 414 eliminated, if but generally carry out for a long time excessive polishing,, as shown in Figure 34 (a), can produce depressed part 410, wear 412 in wiring section.In addition, owing to based on mechanism, grinding, therefore can't avoid producing scratch, pit 416.

Owing to generally being difficult to by grinding, residual conducting film 414 to be removed, therefore need to carry out excessive polishing.In this case, be easy to produce depressed part 410, wear 412 and scratch, pit 416.For fear of this situation, can adopt following method, in CMP, carry out above-mentioned a large amount of copper grinding steps, in the copper clearing process of after this CMP, remaining copper film is reached below 50nm, and then carry out copper clearing process after this by chemical etching, thereby copper film is removed.Like this, if do not utilize mechanism but utilize chemical etching to carry out the copper clearing process, can not produce the grinding that flaw ground carries out copper film.

As the etchant used in chemical etching, can use the mixture of the acid of the oxidant of alkali, hydrogen peroxide etc. of the acid, ammoniacal liquor etc. of sulfuric acid, nitric acid, halogenated acid (particularly hydrofluoric acid, hydrochloric acid) etc. and hydrogen fluoride, sulfuric acid etc.In addition, in a large amount of copper grinding steps, measure the thickness of the film of electric conductivity, preferably, when the thickness of this measurement gained, reach the thickness of regulation, preferably, when reaching 100nm when following, be switched to the copper clearing process from a large amount of copper grinding steps.Can utilize by conducting film is irradiated light measure the optical sensor of thickness, by detect the vortex flow that conducting film produces measure thickness eddy current sensor (with reference to Fig. 2), by the rotation torque that detects grinding table 22, measure the thickness of conducting film the moment of torsion detecting sensor, by least a sensor in the ultrasonic sensor of measuring thickness towards conducting film conduction ultrasonic wave, measure the thickness in this situation.

Above-mentioned chemical etching is not limited to a large amount of copper grinding steps that use the CMP device and form the film of copper film, can also combine with other operations.That is,, after can at the film-shaped of the electric conductivity by smooth, being formed in the various operations on substrate, utilizing chemical etching and the film of this electric conductivity is removed.

For example, can after by electrolytic polishing, forming film, utilize chemical etching that this film is removed.It due to electrolytic polishing, is the grinding that does not utilize mechanism to carry out, therefore can reduce the probability that produces scratch, pit 416, but but there are the following problems: if for example,, because not being electrically connected residual (being formed at the residual of small conducting film on insulating materials) that forms conducting film, can't remove by the conducting film that this is residual.Yet, after by electrolytic polishing, forming the film of smooth electric conductivity, the film of this electric conductivity is removed without the chemical etching be electrically connected to if utilize, conducting film can be removed and is not produced flaw.In this case, the method for electrolytic polishing is not limited to special definite method.For example, can be to have utilized the electrolytic polishing of ion exchanger or do not utilized any in the electrolytic polishing of ion exchanger.In addition, in the electrolytic polishing process, preferably use ultra-pure water, pure water or 500 μ S/cm following liquid or electrolyte.The electrolytic machining device that for example, can utilize TOHKEMY 2003-145354 communique to put down in writing carries out above-mentioned electrolytic polishing.

In addition, can also after by smooth plating, forming film, utilize chemical etching that this film is removed.And then, although in above-mentioned example, the situation that forms and remove copper film (Cu) is illustrated, be not limited to this.For example, can comprise that the film of at least a electric conductivity in Ta, TaN, WN, TiN, Ru utilizes chemical etching that this film is removed later in formation.

Embodiment

In lapping device shown in Figure 35, be actually in process of lapping and by lapping liquid supply nozzle 26 is swung, semiconductor wafer ground.Figure 36 (a) is the curve map that result now is shown.By the curve map in the situation with the lapping liquid supply nozzle 26 shown in Figure 36 (b) is swung, compare as can be knownly, swing by process of lapping, making lapping liquid supply nozzle 26, improved the uniformity in the face that is polished of semiconductor wafer.

Hereto, an embodiment of the present utility model is illustrated, but the utility model is not limited to above-mentioned embodiment, certainly can be implemented in various modes in the scope of its technological thought.

Claims

1. lapping device is characterized in that possessing:

Grinding table, it has abradant surface;

Apical ring, it keeps grinding object and should grinding object pressing on described abradant surface;

The lapping liquid supply port, it supplies with lapping liquid to described abradant surface; And

Travel mechanism, it moves described lapping liquid supply port, so that described lapping liquid is by relatively moving and spreading all over equably whole of described grinding object between described grinding object and described abradant surface.

2. lapping device according to claim 1, is characterized in that,

At least a movement mobile by swinging, that come and go in mobile, in rotary moving and traveling priority of described travel mechanism is moved described lapping liquid supply port.

3. lapping device according to claim 1 and 2, is characterized in that,

Described travel mechanism makes the translational speed of this lapping liquid supply port change in the moving process of described lapping liquid supply port.

4. lapping device according to claim 1 and 2, is characterized in that,

Described lapping device also possesses the liquid measure controlling organization, and this liquid measure controlling organization is controlled the amount of the described lapping liquid supplied with from this lapping liquid supply port in the moving process at described lapping liquid supply port.

5. lapping device according to claim 1 and 2, is characterized in that,

Also possess the lapping liquid supply nozzle, this lapping liquid supply nozzle has described lapping liquid supply port.

6. lapping device according to claim 1 and 2, is characterized in that,

Also possess the lapping liquid supply nozzle, this lapping liquid supply nozzle has a plurality of described lapping liquid supply ports.

7. lapping device according to claim 6, is characterized in that,

A plurality of described lapping liquid supply ports have different apertures.

8. lapping device according to claim 6, is characterized in that,

Also possess the liquid measure controlling organization, this liquid measure controlling organization is adjusted respectively the amount of the lapping liquid from a plurality of described lapping liquid supply ports supplies.

9. lapping device according to claim 5, is characterized in that,

Described lapping liquid supply nozzle is along the radial arrangement of described grinding table.

10. lapping device according to claim 5, is characterized in that,

Described lapping liquid supply nozzle is along the direction configuration of radially tilting with the angle of stipulating with respect to described grinding table.

11. lapping device according to claim 5, is characterized in that,

Described apical ring and described grinding table carry out irrotational relative motion.

12. a lapping device is characterized in that possessing:

Grinding table, it has abradant surface;

A plurality of lapping liquid supply ports, they supply with lapping liquid to described abradant surface; And

The liquid measure controlling organization, its quantity delivered to the described lapping liquid from described lapping liquid supply port is controlled, so that described lapping liquid is by relatively moving and spreading all over equably whole of described grinding object between described grinding object and described abradant surface.

13. lapping device according to claim 12, is characterized in that,

Described liquid measure controlling organization is adjusted respectively the amount of the lapping liquid from a plurality of described lapping liquid supply ports supplies.

14. according to the described lapping device of claim 12 or 13, it is characterized in that,

A plurality of described lapping liquid supply ports have different apertures.

15. according to the described lapping device of claim 12 or 13, it is characterized in that,

16. lapping device according to claim 15, is characterized in that,

17. lapping device according to claim 15, is characterized in that,

18. according to the described lapping device of claim 12 or 13, it is characterized in that,

19. a lapping device is characterized in that possessing:

Grinding table, it has abradant surface;

Discrete part, it disperses lapping liquid and supplies with to described abradant surface; And

The lapping liquid supply port, it supplies with lapping liquid to described discrete part.

20. lapping device according to claim 19, is characterized in that,

Described discrete part is the fan-shaped dispersion plate that is installed on described lapping liquid supply port.

21. according to the described lapping device of claim 19 or 20, it is characterized in that,

22. a lapping device is characterized in that possessing:

Grinding table, it has abradant surface;

Discrete part, its lapping liquid that makes to supply to described abradant surface from described lapping liquid supply port disperses and supplies with between described grinding object and described abradant surface.

23. lapping device according to claim 22, is characterized in that,

Described discrete part is the discoideus dispersion plate that is installed on described lapping liquid supply port.

24. lapping device according to claim 22, is characterized in that,

Described discrete part is contact component, this contact component with respect to described lapping liquid supply port, be configured in described abradant surface moving direction downstream and with described abradant surface, contact.

25. lapping device according to claim 24, is characterized in that,

Described contact component is formed by the elastomer with wearability.

26. according to the described lapping device of claim 24 or 25, it is characterized in that,

Described contact component has slit in the end contacted with described abradant surface.

27. lapping device according to claim 22, is characterized in that,

28. a lapping device is characterized in that possessing:

Grinding table, it has abradant surface;

Described apical ring possesses the retaining ring of the ring-type of the outer peripheral edges that keep described grinding object,

On described retaining ring and face that described abradant surface contacts, be formed with the groove that the outer peripheral face of this retaining ring is communicated with inner peripheral surface,

The groove of described retaining ring is 10%～50% at the aperture opening ratio of described outer peripheral face.

29. lapping device according to claim 28, is characterized in that,

When grinding described grinding object, described apical ring is with 1/3～1/1.5 rotating speed rotation of the rotating speed of described grinding table.

30. lapping device according to claim 29, is characterized in that,

Described grinding table and described apical ring rotate to equidirectional.

31. lapping device according to claim 29, is characterized in that,

Described grinding table and described apical ring rotate round about.

32. lapping device according to claim 28, is characterized in that,

Described retaining ring possesses:

Pressing component, it is pressed described abradant surface and the contact condition of described grinding object and described abradant surface is adjusted; With

Guide member, it prevents that described grinding object from flying out from described apical ring.

33. lapping device according to claim 32, is characterized in that,

Described guide member is configured in than described pressing component more near the position of described grinding object.

34. according to the described lapping device of claim 32 or 33, it is characterized in that,

Described guide member constitutes the height that can adjust the described abradant surface of distance.

35. according to the described lapping device of claim 32 or 33, it is characterized in that,

Described guide member is ring-type.

36. according to the described lapping device of claim 32 or 33, it is characterized in that,

The radial width of described guide member is below 6mm.

37. according to the described lapping device of claim 32 or 33, it is characterized in that,

Described guide member is formed by the little material of hardness of the described grinding object of hardness ratio.

38. a lapping device is characterized in that possessing:

Grinding table, it has abradant surface;

Relative motion mechanism, it makes described abradant surface and described grinding object carry out relative motion with the relative velocity more than 2m/s,

It is 0.38mm that described abradant surface has sectional area ²Above groove.

39. according to the described lapping device of claim 38, it is characterized in that,

Described groove is a plurality of grooves that form concentric circles.

40. according to the described lapping device of claim 38 or 39, it is characterized in that,

Described abradant surface also has the stria connected between a plurality of described grooves.

41. according to the described lapping device of claim 40, it is characterized in that,

Described stria is the groove with respect to the linearity of circumferencial direction inclination.

42. according to the described lapping device of claim 38 or 39, it is characterized in that,

It is 2.98mm that described abradant surface has a plurality of aperture areas ²Above hole.

43. according to the described lapping device of claim 38 or 39, it is characterized in that,

Possess a plurality of described lapping liquid supply ports.

44. according to the described lapping device of claim 38 or 39, it is characterized in that,

Described grinding pad has cavernous.

45. a lapping device is characterized in that possessing:

Grinding table, it has abradant surface;

Apical ring, it keeps grinding object and should grinding object pressing on described abradant surface; And

The lapping liquid supply port, it supplies with lapping liquid to described abradant surface,

46. according to the described lapping device of claim 45, it is characterized in that,

The aperture area in described hole is 19.63mm ²Above.

47. according to the described lapping device of claim 45 or 46, it is characterized in that,

Described grinding pad has cavernous.

48. a lapping device is characterized in that possessing:

Grinding table, it has abradant surface;

A plurality of lapping liquid supply lines, they extend from a plurality of described lapping liquid supply ports, and with the lapping liquid circulatory system of the outside that is arranged at lapping device, directly are connected respectively.

49. according to the described lapping device of claim 48, it is characterized in that,

The described lapping liquid circulatory system possesses:

The stoste case, it accumulates lapping liquid stoste;

The first adjusting tank, it will dilute and be adjusted into the concentration more than the concentration that polishing used from the grinding stoste of described stoste case; And

The second adjusting tank, it will dilute from the lapping liquid of described the first adjusting tank and be adjusted into than the low concentration of lapping liquid concentration in described the first adjusting tank.

50. according to the described lapping device of claim 48, it is characterized in that,

When to described grinding table upper surface, not supplying with lapping liquid, the described lapping liquid circulatory system circulates lapping liquid in the lapping liquid stream, and when supplying with lapping liquid, the described lapping liquid circulatory system is supplied with lapping liquid from described lapping liquid stream.

51. according to the described lapping device of claim 49, it is characterized in that,

In the described lapping liquid circulatory system, be provided with circulating box, and be provided with temperature sensor and control module, wherein, described temperature sensor detects the temperature of the lapping liquid in described circulating box, and described control module is controlled to be the lapping liquid temperature in described circulating box according to the detected lapping liquid temperature of described temperature sensor the temperature of regulation.

52. according to the described lapping device of claim 49, it is characterized in that,

In the described lapping liquid circulatory system, be provided with circulating box, and be provided with lapping liquid level height detector and lapping liquid flow adjustment unit, wherein, described lapping liquid level height detector detects the lapping liquid level height in described circulating box, described lapping liquid flow adjustment unit is adjusted lapping liquid to situation about flowing in described circulating box, based on the detected lapping liquid level height of described lapping liquid level height detector, the lapping liquid level height in described circulating box is in the scope of regulation.

53. a lapping device is characterized in that possessing:

Grinding table, it has abradant surface;

Fluid ejection mechanisms, it is to the fluid-mixing of described abradant surface jet cleaning liquid and gas; And

Output mechanism, it is configured in the downstream of the moving direction of described abradant surface with respect to described fluid ejection mechanisms, and described fluid-mixing is discharged from described abradant surface.

54. according to the described lapping device of claim 53, it is characterized in that,

Described output mechanism possesses the contact component contacted with described abradant surface.

55. according to the described lapping device of claim 54, it is characterized in that,

Described contact component is formed by the low material of coefficient of friction.

56. according to the described lapping device of claim 54 or 55, it is characterized in that,

Described contact component is formed by the high material of sealing.

57. according to the described lapping device of claim 54 or 55, it is characterized in that,

Described contact component is along the radial arrangement of described grinding table.

58. according to the described lapping device of claim 54 or 55, it is characterized in that,

Described contact component is along the direction configuration of radially tilting with the angle of stipulating with respect to described grinding table.

59. according to the described lapping device of any one in claim 53 to 55, it is characterized in that,

Described output mechanism possesses:

Gas vent to described abradant surface ejection gas; With

Control the spray volume of described gas, the control part of at least one party in ejection pressure and ejection mode.

60. according to the described lapping device of claim 59, it is characterized in that,

Described gas vent is along the radial arrangement of described grinding table.

61. according to the described lapping device of claim 59, it is characterized in that,

Described gas vent is along the direction configuration of radially tilting with the angle of stipulating with respect to described grinding table.

62. according to the described lapping device of any one in claim 53 to 55, it is characterized in that,

Described lapping device also possesses the cover that covers described fluid ejection mechanisms and described output mechanism.

63. according to the described lapping device of any one in claim 53 to 55, it is characterized in that,

Described fluid ejection mechanisms and described output mechanism are positioned at the upstream side of the moving direction of described abradant surface with respect to described apical ring.

64. according to the described lapping device of any one in claim 53 to 55, it is characterized in that,

Described lapping device also possesses trimmer, and this trimmer is repaired described abradant surface.