CN203250517U - AMOLED pixel circuit - Google Patents
AMOLED pixel circuit Download PDFInfo
- Publication number
- CN203250517U CN203250517U CN2013203127842U CN201320312784U CN203250517U CN 203250517 U CN203250517 U CN 203250517U CN 2013203127842 U CN2013203127842 U CN 2013203127842U CN 201320312784 U CN201320312784 U CN 201320312784U CN 203250517 U CN203250517 U CN 203250517U
- Authority
- CN
- China
- Prior art keywords
- transistor
- transistorized
- electric capacity
- grid
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The utility model discloses an AMOLED pixel circuit belonging to the technical field of display. The AMOLED pixel circuit comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a first capacitor, a second capacitor, a current source and a luminescent device. The AMOLED pixel circuit can be rapidly charged at a low gray-scale state, and has a high adaptation capability that different currents are output by the AMOLED pixel circuit according to high and low gray-scale information. The current output at a lighting stage serves as a normal working current for the luminescent device, so that a charging process is accelerated, and normal work for the luminescent device is ensured.
Description
Technical field
The utility model relates to the display technique field, particularly a kind of AMOLED image element circuit.
Background technology
Active matrix organic LED (Active Matrix Organic Light Emitting Diode, AMOLED) use thin film transistor (TFT) (Thin Film Transistor, TFT) driving Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) is luminous.
OLED image element circuit type of drive can be divided into current drives and voltage drives, and in Voltag driving circuit, flows through the electric current I of OLED
OLEDCalculate by following formula:
Wherein: μ
nBe carrier mobility, Cox is gate oxide electric capacity,
Be transistor breadth length ratio, V
DataBe data voltage, V
OLEDBe the OLED operating voltage, for all pixel cells are shared V
ThBe transistorized threshold voltage, for enhancement mode TFT, V
ThFor on the occasion of, for depletion type TFT, V
ThBe negative value.
By following formula as can be known, if the V between the different pixels unit
ThDifference, then electric current there are differences.If the V of pixel
ThDrift about in time, then may cause first after-current different, cause ghost.And because OLED device heterogeneity causes OLED operating voltage difference, also can cause current difference.
The advantage that the current drives comparison with voltage drives is: electric current I
OLED=I
DataIf the threshold voltage of pixel is along with the time drifts about, current driving circuit has the effect of the current levels of current of autonomous adjustment, with the V of TFT device itself
ThIrrelevant, can natural implementation space on all even temporal stable demonstrations.But because driving time is longer, the current mode driving circuit generally is used for undersized screen.
Fig. 1 is the circuit structure diagram of existing current drives mode, and this circuit is divided into two stage preliminary fillings and glow phase, phase one, the power supply ARVDD of image element circuit is low level, transistor T 4 turn-offs, and sweep signal SCAN is high level, transistor T 1 and T2 conducting, capacitor C s is charged, subordinate phase, the power supply ARVDD of image element circuit is high level, sweep signal SCAN is low level, transistor T 1 and T2 turn-off, and OLED is luminous.It is that the duration of charging is long that this type of current mode driving image element circuit has a very large defective, so suppressing the range of application that current mode drives image element circuit always.
Summary of the invention
The technical matters that (one) will solve
The technical problems to be solved in the utility model is: how to provide a kind of AMOLED image element circuit, to solve the slow deficiency of existing AMOLED image element circuit charging.
(2) technical scheme
For solving the problems of the technologies described above, the utility model provides a kind of AMOLED image element circuit, and this circuit comprises the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor, the first electric capacity, the second electric capacity, current source and luminescent device; The grid of the first transistor is connected with the 8th transistorized grid, the 5th transistorized grid and charging signals surface sweeping control module respectively; The drain electrode of the first transistor is connected with power supply with the first end of the drain electrode of transistor seconds, the 3rd transistorized drain electrode, the second electric capacity respectively; The source electrode of the first transistor respectively with the 3rd transistorized grid be connected the first end of electric capacity and be connected; The 8th transistorized grid connects with the 8th transistorized drain electrode; The 8th transistorized source electrode is connected with the 6th transistorized drain electrode with the second end of the second electric capacity, the grid of transistor seconds respectively; The 3rd transistorized grid connects with the 4th transistorized grid; The 3rd transistorized source electrode is connected with the second end, the 5th transistorized drain electrode and the 4th transistorized source electrode of the first electric capacity respectively; The source electrode of transistor seconds connects with the 4th transistorized drain electrode; The 4th transistorized source electrode connects with the 7th transistorized drain electrode; The 7th transistorized grid is connected with the trigger pip control module; The 7th transistorized source electrode is connected positive pole and is connected with luminescent device; The minus earth of luminescent device; The 6th transistorized grid is connected with discharge signal scan control unit; The 5th transistorized source electrode is connected first end respectively at the 6th transistorized source electrode and is connected with current source; The second end ground connection of current source.
Further, described charging signals surface sweeping control module comprises the first sweep trace, and described the first sweep trace is used for control described the first electric capacity and the second electric capacity are charged; Described discharge signal scan control unit comprises the second sweep trace, and described the second sweep trace is used for control described the second electric capacity is discharged; Described trigger pip control module comprises the light emitting control line, and it is luminous that described light emitting control line is used for the control luminescent device.
Further, the ratio of the described the 3rd transistorized breadth length ratio and described the 4th transistorized breadth length ratio is a setting value.
Further, described current source is the Semi-digital formula constant current source with identification height gray scale states.
Further, described luminescent device is organic electroluminescent diode apparatus.
(3) beneficial effect
1. Semi-digital formula constant current source can provide different electric currents according to the height gray level information, and is adaptable;
2. by the breadth length ratio of the 3rd transistor T 3 and the 4th transistor T 4 is selected, so that the ratio of the breadth length ratio of the breadth length ratio of the 3rd transistor T 3 and the 4th transistor T 4 is setting value, and then control AMOLED image element circuit carries out rapid charge when low gray scale states;
3. after rapid charge is finished, control corresponding transistor by Semi-digital formula constant current source and turn-off, for luminescent device provides normal working current; Both accelerate charging process, guaranteed again the normal operation of luminescent device.
Description of drawings
Fig. 1 is the circuit structure diagram of existing current drives mode;
Fig. 2 is AMOLED image element circuit of the present utility model;
Fig. 3 is the sequential chart of AMOLED image element circuit of the present utility model;
Fig. 4 is the circuit diagram in the preliminary filling stage of AMOLED image element circuit of the present utility model;
Fig. 5 is the circuit diagram of the discharge regime of AMOLED image element circuit of the present utility model;
Fig. 6 is the circuit diagram of the control luminescent device glow phase of AMOLED image element circuit of the present utility model;
Fig. 7 is the analogous diagram of embodiment of the present utility model.
Embodiment
Below in conjunction with drawings and Examples, embodiment of the present utility model is described in further detail.Following examples are used for explanation the utility model, but are not used for limiting scope of the present utility model.
In order to solve the slow deficiency of existing AMOLED image element circuit charging, the utility model provides a kind of AMOLED image element circuit.
AMOLED image element circuit of the present utility model comprises the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor, the first electric capacity, the second electric capacity, current source and luminescent device as shown in Figure 2; The grid of the first transistor is connected with the 8th transistorized grid, the 5th transistorized grid and charging signals surface sweeping control module respectively; The drain electrode of the first transistor is connected with power supply with the first end of the drain electrode of transistor seconds, the 3rd transistorized drain electrode, the second electric capacity respectively; The source electrode of the first transistor respectively with the 3rd transistorized grid be connected the first end of electric capacity and be connected; The 8th transistorized grid connects with the 8th transistorized drain electrode; The 8th transistorized source electrode is connected with the 6th transistorized drain electrode with the second end of the second electric capacity, the grid of transistor seconds respectively; The 3rd transistorized grid connects with the 4th transistorized grid; The 3rd transistorized source electrode is connected with the second end, the 5th transistorized drain electrode and the 4th transistorized source electrode of the first electric capacity respectively; The source electrode of transistor seconds connects with the 4th transistorized drain electrode; The 4th transistorized source electrode connects with the 7th transistorized drain electrode; The 7th transistorized grid is connected with the trigger pip control module; The 7th transistorized source electrode is connected positive pole and is connected with luminescent device; The minus earth of luminescent device; The 6th transistorized grid is connected with discharge signal scan control unit; The 5th transistorized source electrode is connected first end respectively at the 6th transistorized source electrode and is connected with current source; The second end ground connection of current source.
Described charging signals surface sweeping control module comprises the first sweep trace, and described the first sweep trace is used for control described the first electric capacity and the second electric capacity are charged; Described discharge signal scan control unit comprises the second sweep trace, and described the second sweep trace is used for control described the second electric capacity is discharged; Described trigger pip control module comprises the light emitting control line, and it is luminous that described light emitting control line is used for the control luminescent device.
The ratio of the described the 3rd transistorized breadth length ratio and described the 4th transistorized breadth length ratio is a setting value.Described current source is the Semi-digital formula constant current source with identification height gray scale states.Described Semi-digital formula constant current source is on the basis of existing constant current source, forms by control signal and extracts electric current and pour into each other positive and negative digital current of these two kinds in electric current, with identification with distinguish high gray and low GTG; Extraction electric current described in the present embodiment is that negative value is used for the low GTG of corresponding identification, and the described electric current that pours into is on the occasion of being used for corresponding identification high gray.Described Semi-digital formula constant current source can provide different electric currents according to the height gray level information, and is adaptable.Described Semi-digital formula constant current source can also provide traditional analog current.Described luminescent device is organic electroluminescent diode apparatus OLED.
Take Fig. 2 as example, AMOLED image element circuit of the present utility model is by the first transistor T1～the 8th transistor T 8, all crystals Guan Douwei N-shaped transistor of the present utility model.Memory capacitance is comprised of the first capacitor C 1 and the second capacitor C 2, and the first sweep trace Scan1, the second sweep trace Scan2 and light emitting control line EM are control signal, and luminescent device is OLED, and the power supply of image element circuit is ARVDD, I
DataSemi-digital formula constant current source to electric current, it can identify the height gray scale states, thereby can give different electric currents.I
DataBe the output of line driver " Source Driver " in fact, provide different charging " programming " electric currents according to the difference of height GTG, when high gray, large electric current, the charging that it provides " programming " electric current is initial value; And when low GTG, little electric current, the charging that it provides " programming " electric current is N+1 times of initial value.Fig. 3 is the sequential chart of AMOLED image element circuit of the present utility model, among the figure, and V
Scan1Voltage, the V on the first sweep trace Scan1
Scan2Voltage, the V on the second sweep trace Scan2
EMThe voltage on the light emitting control line EM.S1, S2 and S3 represent respectively phase one, subordinate phase and phase III.
Be filled with large electric current in order to be implemented in the low GTG situation, the ratio of the 3rd transistor T 3 and the 4th transistor T 4 breadth length ratios is 1:N, and the value of N depends on the circumstances, for example N=9.The driving method that the utility model is corresponding comprises:
The S1 stage: described the first electric capacity and the second electric capacity are charged;
Charging signals surface sweeping control module output noble potential;
Conducting the first transistor, transistor seconds, the 3rd transistor, the 4th transistor and the 5th transistor and the 8th transistor; Turn-off the 6th transistor and the 7th transistor.
This stage is the preliminary filling stage, and described the first electric capacity and the second electric capacity are charged;
As shown in Figure 4, the first sweep trace Scan1 is high level, the second sweep trace Scan2 is low level, light emitting control line EM is low level, transistor T 1～T5 and T8 open, all the other transistors turn-off, and this process has been finished the process that capacitor C 1, C2 are charged, and (last actual glow current only has the electric current of T3 during low GTG, and charging current is the 3rd transistor T 3 and the 4th transistor T 4 sums.If the breadth length ratio of the 4th transistor T 4 is that the N of breadth length ratio of the 3rd transistor T 3 is doubly large, so charging current be common charging current N+1 doubly.During charging, the 3rd transistor T 3, the 4th transistor T 4 are the TFT of identical duty, " current mirror " in the similar mimic channel) because EM is low level, at this moment OLED is dark attitude.Effect at S1 stage Semi-digital formula constant current source provides an analog current, and the size of this analog current is relevant with the brightness value that OLED shows, and the voltage signal that this analog current is corresponding is stored on the capacitor C 1.
The S2 stage: described the second electric capacity is discharged;
Discharge signal scan control unit output noble potential;
Conducting transistor seconds, the 3rd transistor, the 4th transistor and the 6th transistor; Turn-off the first transistor, the 5th transistor, the 7th transistor and the 8th transistor; Luminescent device is in low gray scale states, realizes described the second electric capacity is discharged.
This stage is that the second electric capacity carries out discharge regime, and as shown in Figure 5, the first sweep trace Scan1 is low level, the second sweep trace Scan2 is high level, light emitting control line EM is low level, transistor seconds T2～the 4th transistor T 4 and the 6th transistor T 6, and all the other transistors turn-off.If under low gray scale states, this process has been carried out the process (glow phase after the charging, low GTG can by turn-offing transistor seconds T2 and the 4th transistor T 4, be reduced to the actual needs value to glow current) of discharge to the second capacitor C 2; If be the high gray state, 2 chargings of the second capacitor C.Because light emitting control line EM is low level, at this moment OLED also is dark attitude.Effect at S2 stage Semi-digital formula constant current source is different according to low gray scale states and high gray state, low gray scale states, Semi-digital formula constant current source provides one to extract electric current (positive digital current), extracts the electric charge (being the electric charge of transistor seconds T2 grid) of the second capacitor C 2; High gray state, Semi-digital formula constant current source provide one to pour into electric current (negative digital current), and the second capacitor C 2 is charged.
The S3 stage: it is luminous to control described luminescent device.
Trigger pip control module output noble potential;
Conducting transistor seconds, the 3rd transistor, the 4th transistor and the 7th transistor; Turn-off the first transistor, the 5th transistor, the 6th transistor and the 8th transistor; Luminescent device is in luminance.
This stage is control luminescent device glow phase, as shown in Figure 6, the first sweep trace Scan1 and the second sweep trace Scan2 are low level, and light emitting control line EM is high level, transistor seconds T2～the 4th transistor T 4 and the 7th transistor T 7 are opened, and all the other transistors turn-off.Because EM is high level, OLED is luminous for this one-phase.If under the low gray scale states, when subordinate phase, the electricity of capacitor C 2 is caused transistor seconds T2, the 4th transistor T 4 to turn-off by fully emptying, and actual glow current only has the electric current of T3; If under the high gray state, when subordinate phase, capacitor C 2 chargings, transistor seconds T2,4 conductings of the 4th transistor T, actual glow current is the electric current sum of electric current and the T4 of T3.
By above three phases as can be known, the ratio of the breadth length ratio of the breadth length ratio of the 3rd transistor T 3 and the 4th transistor T 4 is proportional to have played vital role in this image element circuit, the height gray scale states of digital exchange permanent power source recognition image, under for low gray scale states, realized discharge to the second capacitor C 2 in subordinate phase, the 4th transistor T 4 is turn-offed, in the phase III, the glow current of OLED is the electric current of the 3rd transistor T 3, and in the phase one, charging current to capacitor C 1 is the electric current sum of T3 and T4, if the ratio of the breadth length ratio of the breadth length ratio of the 3rd transistor T 3 and the 4th transistor T 4 is N, then charging current be T3 electric current (N+1) doubly, thereby reduced duration of charging of current drives, solved long problem of current-driven pixel circuit duration of charging.
Below by specific embodiment the utility model is described:
What emulation showed is two cycles of single sub-pixel work.First periodogram, the electric current writing pixel of 10nA, second period is the electric current writing pixel of 2 μ A.Fig. 7 utilizes hspice software that this image element circuit is carried out oscillogram behind the analog simulation.
Among Fig. 7, Vscan1 is the voltage waveform on the scan signal line Scan1; Vscan2 is the voltage waveform on the scan signal line Scan2; Vem is the voltage waveform on the light emitting control line; Idata is the electric current of current source; IT3 is the electric current that flows through the 3rd transistor T 3; IT4 is the electric current that flows through the 4th transistor T 4;
In order to obtain the OLED output current of 10nA, it is 1:9 that the ratio of the breadth length ratio of the 3rd transistor T 3 and the 4th transistor T 4 is selected in the emulation of present embodiment.So can input the electric current of 10 times 10nA, i.e. 100nA can see the three phases of image element circuit work from oscillogram.When for low gray scale states, the 3rd transistor T 3 has the 10nA electric current to flow through, and the current value of the 4th transistor T 4 is approximately 0, can be judged to be the 4th transistor T 4 and turn-off.At second period, the 3rd transistor T 3 and the 4th transistor T 4 are worked simultaneously.The electric current of 2 μ A is exported to OLED, and as can be seen from the figure the electric current sum of the 3rd transistor T 3 and the 4th transistor T 4 is approximately 2 μ A.
Above embodiment only is used for explanation the utility model; and be not limitation of the utility model; the those of ordinary skill in relevant technologies field; in the situation that does not break away from spirit and scope of the present utility model; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present utility model, and scope of patent protection of the present utility model should be defined by the claims.
Claims (5)
1. AMOLED image element circuit, it is characterized in that this circuit comprises the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor, the first electric capacity, the second electric capacity, current source and luminescent device;
The grid of the first transistor is connected with the 8th transistorized grid, the 5th transistorized grid and charging signals surface sweeping control module respectively; The drain electrode of the first transistor is connected with power supply with the first end of the drain electrode of transistor seconds, the 3rd transistorized drain electrode, the second electric capacity respectively; The source electrode of the first transistor respectively with the 3rd transistorized grid be connected the first end of electric capacity and be connected; The 8th transistorized grid connects with the 8th transistorized drain electrode; The 8th transistorized source electrode is connected with the 6th transistorized drain electrode with the second end of the second electric capacity, the grid of transistor seconds respectively; The 3rd transistorized grid connects with the 4th transistorized grid; The 3rd transistorized source electrode is connected with the second end, the 5th transistorized drain electrode and the 4th transistorized source electrode of the first electric capacity respectively; The source electrode of transistor seconds connects with the 4th transistorized drain electrode; The 4th transistorized source electrode connects with the 7th transistorized drain electrode; The 7th transistorized grid is connected with the trigger pip control module; The 7th transistorized source electrode is connected positive pole and is connected with luminescent device; The minus earth of luminescent device; The 6th transistorized grid is connected with discharge signal scan control unit; The 5th transistorized source electrode is connected first end respectively at the 6th transistorized source electrode and is connected with current source; The second end ground connection of current source.
2. AMOLED image element circuit as claimed in claim 1 is characterized in that, described charging signals surface sweeping control module comprises the first sweep trace, and described the first sweep trace is used for control described the first electric capacity and the second electric capacity are charged; Described discharge signal scan control unit comprises the second sweep trace, and described the second sweep trace is used for control described the second electric capacity is discharged; Described trigger pip control module comprises the light emitting control line, and it is luminous that described light emitting control line is used for the control luminescent device.
3. AMOLED image element circuit as claimed in claim 1 is characterized in that, the ratio of the described the 3rd transistorized breadth length ratio and described the 4th transistorized breadth length ratio is a setting value.
4. AMOLED image element circuit as claimed in claim 3 is characterized in that, described current source is the Semi-digital formula constant current source with identification height gray scale states.
5. AMOLED image element circuit as claimed in claim 1 is characterized in that, described luminescent device is organic electroluminescent diode apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203127842U CN203250517U (en) | 2013-05-31 | 2013-05-31 | AMOLED pixel circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203127842U CN203250517U (en) | 2013-05-31 | 2013-05-31 | AMOLED pixel circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203250517U true CN203250517U (en) | 2013-10-23 |
Family
ID=49376943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013203127842U Withdrawn - After Issue CN203250517U (en) | 2013-05-31 | 2013-05-31 | AMOLED pixel circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203250517U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280183A (en) * | 2013-05-31 | 2013-09-04 | 京东方科技集团股份有限公司 | AMOLED pixel circuit and driving method |
| WO2016123852A1 (en) * | 2015-02-03 | 2016-08-11 | 深圳市华星光电技术有限公司 | Amoled pixel drive circuit |
| CN111429834A (en) * | 2019-01-08 | 2020-07-17 | 群创光电股份有限公司 | Electronic device and driving circuit |
-
2013
- 2013-05-31 CN CN2013203127842U patent/CN203250517U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280183A (en) * | 2013-05-31 | 2013-09-04 | 京东方科技集团股份有限公司 | AMOLED pixel circuit and driving method |
| WO2014190620A1 (en) * | 2013-05-31 | 2014-12-04 | 京东方科技集团股份有限公司 | Amoled pixel circuit and drive method |
| CN103280183B (en) * | 2013-05-31 | 2015-05-20 | 京东方科技集团股份有限公司 | AMOLED pixel circuit and driving method |
| US9449544B2 (en) | 2013-05-31 | 2016-09-20 | Boe Technology Group Co., Ltd. | AMOLED pixel circuit and driving method |
| WO2016123852A1 (en) * | 2015-02-03 | 2016-08-11 | 深圳市华星光电技术有限公司 | Amoled pixel drive circuit |
| CN111429834A (en) * | 2019-01-08 | 2020-07-17 | 群创光电股份有限公司 | Electronic device and driving circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103280183B (en) | AMOLED pixel circuit and driving method | |
| CN102982767B (en) | Pixel unit driving circuit, driving method and display device | |
| CN103440840B (en) | A kind of display device and image element circuit thereof | |
| CN103413520B (en) | Pixel-driving circuit, display device and image element driving method | |
| CN104850270B (en) | Driving method, drive circuit, touch module, panel and the device of touch module | |
| CN103971640B (en) | A kind of pixel-driving circuit and driving method thereof and display device | |
| CN103198794B (en) | Image element circuit and driving method, organic electroluminescence display panel and display device | |
| CN205080892U (en) | Pixel drive circuit , Pixel circuit , display panel and display device | |
| CN103258501B (en) | Pixel circuit and driving method thereof | |
| CN103400548B (en) | Pixel-driving circuit and driving method, display device | |
| CN105679244B (en) | AMOLED pixel-driving circuits and image element driving method | |
| CN208922723U (en) | Pixel circuit and display device | |
| CN109256094A (en) | Pixel circuit, image element driving method and display device | |
| CN103500556B (en) | A kind of image element circuit and driving method, thin film transistor backplane | |
| CN106448555A (en) | Organic light emitting display panel and driving method thereof, and organic light emitting display device | |
| CN102930821B (en) | A kind of image element circuit and driving method, display device | |
| CN103117040B (en) | Image element circuit, display device and display drive method | |
| CN106952618B (en) | Display device and pixel circuit and its control method | |
| CN104680980A (en) | Pixel driving circuit, driving method thereof and display device | |
| CN203376957U (en) | Pixel driving circuit and display device | |
| CN108922474A (en) | A kind of pixel compensation circuit and its driving method, AMOLED display panel | |
| CN104064145A (en) | Pixel driving circuit and organic light emitting display device | |
| CN107393470A (en) | Image element circuit and its driving method, display base plate and display device | |
| CN104575380A (en) | Pixel circuit and active matrix organic light-emitting display | |
| CN102930820A (en) | Pixel drive circuit, display device and drive method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20131023 Effective date of abandoning: 20150520 |
|
| RGAV | Abandon patent right to avoid regrant |