CN203205405U - Full-packaging common-anode diode power device - Google Patents

Full-packaging common-anode diode power device Download PDF

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Publication number
CN203205405U
CN203205405U CN 201320219323 CN201320219323U CN203205405U CN 203205405 U CN203205405 U CN 203205405U CN 201320219323 CN201320219323 CN 201320219323 CN 201320219323 U CN201320219323 U CN 201320219323U CN 203205405 U CN203205405 U CN 203205405U
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CN
China
Prior art keywords
power device
diode power
chip
slide glass
common anode
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Expired - Lifetime
Application number
CN 201320219323
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Chinese (zh)
Inventor
李科
蔡少峰
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SICHUAN LIPTAI ELECTRONIC CO Ltd
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SICHUAN LIPTAI ELECTRONIC CO Ltd
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Priority to CN 201320219323 priority Critical patent/CN203205405U/en
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Abstract

The utility model discloses a full-packaging common-anode diode power device. The full-packaging common-anode diode power device comprises 2 carrying plates which are arranged side by side, front surfaces of the 2 carrying plates are respectively provided with a chip, and the surfaces, kept far away from the carrying plates, of the two chips are respectively lapped with a same anode outer lead through welding wires. The full-packaging common-anode diode power device has the advantages of simple structure, low cost, and good heat radiation effect.

Description

A kind of total incapsulation common anode diode power device
Technical field
The utility model relates to the diode power device, specifically refers to a kind of total incapsulation common anode diode power device.
Background technology
Diode claims again crystal diode, is called for short diode (diode), in addition, also has early stage vacuum electronic diode; It is a kind of electronic device with unidirectional conduction current.Two lead terminals of a PN junction are arranged in semiconductor diode inside, and this electronic device possesses the transduction of unidirectional current according to the direction of applied voltage.In general, crystal diode is a p-n junction interface that is formed by p-type semiconductor and N-shaped semiconductor sintering.Both sides at its interface form space charge layer, consist of built-in field.When applied voltage equalled zero, owing to the concentration difference of p-n knot both sides charge carrier causes dissufion current and equated to be in the electric equilibrium state by the drift current that built-in field causes, this also was the diode characteristic under the normality.For planar diode, all-in-one-piece slide glass of its inner existence also has fin, because its power is larger, usually heat dissipation capacity is very large, all needs to be equipped with specially corresponding heat abstractor or fin on a lot of devices.Therefore can cause the volume of electrical equipment excessive, or circuit configuration is limited, therefore in order to solve heat dissipation problem, the self-radiating performance that improves diode has become problem that essential needs are broken through in the diode development.The common anode diode power device of existing TO220 total incapsulation normally is made of chip, scolder, bonding wire, slide glass, outer lead, fin and plastic packaging material, 2 diode chip for backlight unit are gone up simultaneously on the slide glass than small size, slide glass passes through insulating trip, fin connects, production efficiency is low, cost is higher, simultaneously easily because human factor product harmful effect product reliability.
The utility model content
The purpose of this utility model is to provide a kind of total incapsulation common anode diode power device, and this apparatus structure is simple, and cost is low, good heat dissipation effect.
Implementation of the present utility model is as follows: a kind of total incapsulation common anode diode power device, comprise 2 slide glasses that are arranged side by side, the front of 2 slide glasses is provided with 1 chip block separately, and 2 chip blocks are overlapped with same anode outer lead by bonding wire separately away from the one side of slide glass.
The utility model has designed a kind of total incapsulation common anode diode power device, belong to a kind of semiconductor power device, characteristic is conventional slide glass is divided into two, strengthened the slide glass area, allow slide glass play simultaneously thermolysis, thereby reduced the insulating trip between fin and slide glass and the fin, this power device steady quality is reliable, speed of production is fast, can significantly enhance productivity.This power device and common cathode diode mix proportion electric bridge use, and are widely used in all kinds of household appliances field.2 chip blocks are overlapped with same anode outer lead by bonding wire separately away from the one side of slide glass, that is, utilize the lead-in wire of the same common anode utmost point to draw the connectivity port.
There is the gap between described 2 slide glasses.This gap can be filled insulant, also can be filled heat sink material or heat-transfer matcrial, also can not fill any material.
Described 2 slide glasses are connected with the negative electrode outer lead separately.
The anode outer lead is between adjacent negative electrode outer lead.
Described slide glass front is provided with the V-shaped groove that the cross section is the V font, and V-shaped groove is laid around chip.V-shaped groove has been avoided product deburring liquid and has been electroplated Liquid Penetrant.
There is solder layer between the front of chip and slide glass.Solder layer is the general name for the metal alloy compositions of dosing weld seam, overlay cladding.
Also comprise the plastic packaging shell, described slide glass and chip all are encapsulated in the plastic packaging shell.
There is epoxy resin layer between described plastic packaging shell and the slide glass, has epoxy resin layer between plastic packaging shell and the chip.
Described bonding wire is copper-weld wire or aluminium bonding wire.
Chip carries out ohmic contact with slide glass by scolder and is fixedly connected with, and chip is connected by bit copper or aluminium sealing wire with outer lead, and product is all sealed the effect of playing insulation and electic protection with epoxy resin.
On 2 slide glasses, the power-consumption heat that produces in the work dispelled the heat by slide glass about 2 chips were separately fixed at.Traditional slide glass is divided into two, therefore can strengthens the slide glass area larger.
The utility model is produced specified diode and is preferentially encapsulated according to TO 220 standards, and wherein TO 220 encapsulation standards are 400.00 x, 590.00 x 180.00mils body size.
The utility model has the advantage of: this apparatus structure is simple, and cost is low, good heat dissipation effect.
Description of drawings
Fig. 1 is the utility model structural representation.
Reference numeral among the figure is: 1, plastic packaging shell; 2, slide glass; 3, solder layer; 4, chip; 5, bonding wire; 6, anode outer lead; 7, negative electrode outer lead; 8, V-shaped groove.
Embodiment
Embodiment one
As shown in Figure 1.
A kind of total incapsulation common anode diode power device, the front that comprises 2,2 slide glasses 2 of 2 slide glasses that are arranged side by side are provided with separately 1 chip block, 4,2 chip blocks 4 and are overlapped with same anode outer lead 6 by bonding wire 5 separately away from the one side of slide glass 2.The utility model has designed a kind of total incapsulation common anode diode power device, belong to a kind of semiconductor power device, characteristic is conventional slide glass is divided into two, strengthened the slide glass area, allow slide glass play simultaneously thermolysis, thereby reduced the insulating trip between fin and slide glass and the fin, this power device steady quality is reliable, speed of production is fast, can significantly enhance productivity.This power device and common cathode diode mix proportion electric bridge use, and are widely used in all kinds of household appliances field.2 chip blocks 4 are overlapped with same anode outer lead 6 by bonding wire 5 separately away from the one side of slide glass 2, that is, utilize the lead-in wire of the same common anode utmost point to draw the connectivity port.
There is the gap between described 2 slide glasses 2.This gap can be filled insulant, also can be filled heat sink material or heat-transfer matcrial, also can not fill any material.Described 2 slide glasses 2 are connected with negative electrode outer lead 7 separately.Anode outer lead 6 is between adjacent negative electrode outer lead 7.
Described slide glass 2 fronts are provided with the V-shaped groove 8 that the cross section is the V font, and V-shaped groove 8 is laid around chip 4.V-shaped groove 8 has been avoided product deburring liquid and has been electroplated Liquid Penetrant.
There is solder layer 3 between the front of chip 4 and slide glass 2.Solder layer 3 is the general names for the metal alloy compositions of dosing weld seam, overlay cladding.
Also comprise plastic packaging shell 1, described slide glass 2 and chip 4 all are encapsulated in the plastic packaging shell 1.There is epoxy resin layer between described plastic packaging shell 1 and the slide glass 2, has epoxy resin layer between plastic packaging shell 1 and the chip 4.Negative electrode outer lead 7 and anode outer lead all run through plastic packaging shell 1, and their end all extends into plastic packaging shell 1 inside.
Described bonding wire 5 is copper-weld wire or aluminium bonding wire.
Chip carries out ohmic contact with slide glass by scolder and is fixedly connected with, and chip is connected by bit copper or aluminium sealing wire with outer lead, and product is all sealed the effect of playing insulation and electic protection with epoxy resin.
On 2 slide glasses, the power-consumption heat that produces in the work dispelled the heat by slide glass about 2 chips were separately fixed at.Traditional slide glass is divided into two, therefore can strengthens the slide glass area larger.
The utility model is produced specified diode and is preferentially encapsulated according to TO 220 standards, and wherein TO 220 encapsulation standards are 400.00 x, 590.00 x 180.00mils body size.
As mentioned above, then can well realize the utility model.

Claims (9)

1. total incapsulation common anode diode power device, it is characterized in that: comprise 2 slide glasses that are arranged side by side (2), the front of 2 slide glasses (2) is provided with 1 chip block (4) separately, and 2 chip blocks (4) are overlapped with same anode outer lead (6) by bonding wire (5) separately away from the one side of slide glass (2).
2. a kind of total incapsulation common anode diode power device according to claim 1 is characterized in that: have the gap between described 2 slide glasses (2).
3. a kind of total incapsulation common anode diode power device according to claim 1, it is characterized in that: described 2 slide glasses (2) are connected with negative electrode outer lead (7) separately.
4. a kind of total incapsulation common anode diode power device according to claim 3, it is characterized in that: anode outer lead (6) is positioned between the adjacent negative electrode outer lead (7).
5. a kind of total incapsulation common anode diode power device according to claim 1, it is characterized in that: described slide glass (2) front is provided with the V-shaped groove that the cross section is the V font (8), and V-shaped groove (8) is laid all around along chip (4).
6. a kind of total incapsulation common anode diode power device according to claim 1 is characterized in that: have solder layer (3) between the front of chip (4) and slide glass (2).
7. the described a kind of total incapsulation common anode diode power device of any one according to claim 1-6, it is characterized in that: also comprise plastic packaging shell (1), described slide glass (2) and chip (4) all are encapsulated in the plastic packaging shell (1).
8. a kind of total incapsulation common anode diode power device according to claim 7 is characterized in that: have epoxy resin layer between described plastic packaging shell (1) and the slide glass (2), have epoxy resin layer between plastic packaging shell (1) and the chip (4).
9. the described a kind of total incapsulation common anode diode power device of any one according to claim 1-6, it is characterized in that: described bonding wire (5) is copper-weld wire or aluminium bonding wire.
CN 201320219323 2013-04-26 2013-04-26 Full-packaging common-anode diode power device Expired - Lifetime CN203205405U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320219323 CN203205405U (en) 2013-04-26 2013-04-26 Full-packaging common-anode diode power device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201320219323 CN203205405U (en) 2013-04-26 2013-04-26 Full-packaging common-anode diode power device

Publications (1)

Publication Number Publication Date
CN203205405U true CN203205405U (en) 2013-09-18

Family

ID=49149482

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201320219323 Expired - Lifetime CN203205405U (en) 2013-04-26 2013-04-26 Full-packaging common-anode diode power device

Country Status (1)

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CN (1) CN203205405U (en)

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CX01 Expiry of patent term

Granted publication date: 20130918

CX01 Expiry of patent term