CN203084152U - Triode transistor characteristic parameter testing system - Google Patents
Triode transistor characteristic parameter testing system Download PDFInfo
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- CN203084152U CN203084152U CN 201320083798 CN201320083798U CN203084152U CN 203084152 U CN203084152 U CN 203084152U CN 201320083798 CN201320083798 CN 201320083798 CN 201320083798 U CN201320083798 U CN 201320083798U CN 203084152 U CN203084152 U CN 203084152U
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Abstract
The utility model discloses a triode transistor characteristic parameter testing system. The triode transistor characteristic parameter testing system comprises a microcontroller module, a serial port communication circuit module connected with the microcontroller module, an upper computer connected with the serial port communication circuit module, a power supply module, a controlled voltage source and a step wave constant current source, wherein an input end of the microcontroller module is connected with an A/D (Analogue/Digital) conversion circuit module and a keyboard circuit module; an input end of the A/D conversion circuit module is connected with a base electrode voltage detection circuit module and a collection electrode voltage detection circuit module; an output end of the microcontroller module is connected with a D/A (Digital/Analogue) conversion circuit module, a liquid crystal display circuit module, a voltage switching relay circuit module and a detection switching relay circuit module; and the controlled voltage source and the step wave constant current source are both connected with the D/A conversion circuit module. The triode transistor characteristic parameter testing system disclosed by the utility model has the advantages of simple structure, reasonable design, small size, convenience for carrying and using, high in testing efficiency, high in testing precision, high in working reliability and low in realization cost, and is convenient for the public to popularize and use.
Description
Technical field
The utility model relates to the Intelligent Measurement technical field, especially relates to a kind of transistor characterisitic parameter test macro.
Background technology
When Analogic Electronic Circuits test or electronic product maintenance, need be to amplification coefficient, breakdown reverse voltage and the reverse saturation current of transistor, and the multiple parameters such as input-output characteristic curve of transistor are measured.At present, transistor curve tracer or multimeter are mainly adopted in the test of traditional transistor characterisitic parameter, enlargement factor etc.Transistor curve tracer can show input, the output characteristic curve of triode, estimates to read direct current, exchange enlargement factor etc., but costs an arm and a leg and inconvenience is carried, and cost performance is not high, is not easy to popularize use; And simple multimeter can only be measured the direct current enlargement factor of transistor, and error is bigger, can not show the family curve of transistor.
The utility model content
Technical problem to be solved in the utility model is at above-mentioned deficiency of the prior art, a kind of transistor characterisitic parameter test macro is provided, it is simple in structure, and is reasonable in design, and volume is little, easy to carry and use, the testing efficiency height, measuring accuracy height, functional reliability height, the realization cost is low, is convenient to popular popularizing and uses.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of transistor characterisitic parameter test macro, it is characterized in that: comprise micro controller module, the serial communication circuit module of joining with described micro controller module and the host computer that joins with described serial communication circuit module, and be used to each electricity consumption module for power supply in the system power module, be used to tested transistor that the controlled voltage source of collector voltage is provided and be used to tested transistor that the staircase waveform constant current source of base current is provided; The input end of described micro controller module is connected to A/D change-over circuit module and is used to import the keyboard circuit module of controlled variable, the input end of described A/D change-over circuit module is connected to and is used for the base voltage testing circuit module that the base voltage to tested transistor detects and is used for the collector voltage testing circuit module that the collector voltage to tested transistor detects, the output terminal of described micro controller module is connected to D/A change-over circuit module, the liquid crystal display circuit module, be used to realize the selection relay circuit module of the positive and negative switching of controlled voltage source output voltage and be used to realize that negative-positive-negative transistor and positive-negative-positive transistor base voltage detect the detection transfer relay circuit module that switches, described controlled voltage source and staircase waveform constant current source all join with the output terminal of described D/A change-over circuit module, described selection relay circuit module and detect the transfer relay circuit module and all join with the output terminal of described micro controller module, described controlled voltage source and described selection relay circuit module join, and described base voltage testing circuit module and described detection transfer relay circuit module join.
Above-mentioned a kind of transistor characterisitic parameter test macro; it is characterized in that: be connected to the overvoltage crowbar module between described controlled voltage source and the tested transistor, be connected to the current foldback circuit module between described staircase waveform constant current source and the tested transistor.
Above-mentioned a kind of transistor characterisitic parameter test macro, it is characterized in that: described micro controller module is single-chip microcomputer MSP430F155, described A/D change-over circuit module and D/A change-over circuit module all are integrated in described single-chip microcomputer MSP430F155 inside.
Above-mentioned a kind of transistor characterisitic parameter test macro is characterized in that: described base voltage testing circuit module is by the first chip OP07-1 and the second chip OP07-2, and resistance R 1, R2, R3 and R4 constitute; Described detection transfer relay circuit module is made of relay SRD-S-112D and triode Q7; The pin 5 of the described first chip OP07-1 joins with the base stage b of described tested transistor, one end of the pin 4 of the described first chip OP07-1 and pin 12 and resistance R 1 and an end of resistance R 2 all with described power module+the 15V voltage output end joins, the other end ground connection of described resistance R 1, the pin 2 of the described first chip OP07-1, one end of the other end of resistance R 2 and resistance R 3 all joins with the pin 5 of described relay SRD-S-112D, the pin 5 of the described second chip OP07-2 and an end of resistance R 4 all join with the other end of described resistance R 3, pin 4 ground connection of the described second chip OP07-2, the pin 12 of the described second chip OP07-2 and described power module+the 15V voltage output end joins, the pin 3 of the described first chip OP07-1 and the pin 3 of the second chip OP07-2 all with described power module-the 15V voltage output end joins, the pin 2 of the described second chip OP07-2 and the other end of resistance R 4 all join with the pin 4 of described relay SRD-S-112D, the pin 2 of described relay SRD-S-112D joins with the input end of described A/D change-over circuit module, the pin 1 of described relay SRD-S-112D and described power module+the 12V voltage output end joins, the pin 3 of described relay SRD-S-112D joins with the collector of described triode Q7, the base stage of described triode Q7 and the output terminal of described micro controller module join, the grounded emitter of described triode Q7.
Above-mentioned a kind of transistor characterisitic parameter test macro is characterized in that: described liquid crystal display circuit module mainly is made of the dual-purpose LCD MODULE of OCMJ4X8C Chinese figure.
Above-mentioned a kind of transistor characterisitic parameter test macro, it is characterized in that: described overvoltage crowbar module is by the first chip OP27-1 and the second chip OP27-2, commutation diode D1 and D2, and resistance R 5, R6, R7, R8, R9, R10 and R11 constitute; One end of described resistance R 5 and an end of resistance R 8 all join with the output terminal of described controlled voltage source, the pin 2 of the described first chip OP27-1 and the other end of described resistance R 5, one end of resistance R 7 and the negative pole of commutation diode D1 join, the pin 3 of the described first chip OP27-1 is by resistance R 6 ground connection, the pin 6 of the described first chip OP27-1 joins with the positive pole of described commutation diode D1 and the negative pole of commutation diode D2, one end of the positive pole of the other end of described resistance R 7 and described commutation diode D2 and resistance R 9 joins, the other end of described resistance R 8, one end of the other end of resistance R 9 and resistance R 11 all joins with the pin 2 of the described second chip OP27-2, the pin 6 of the described second chip OP27-2 and the other end of resistance R 11 all join with the collector c of described tested transistor, and the pin 3 of the described second chip OP27-2 is by resistance R 10 ground connection.
The utility model compared with prior art has the following advantages:
1, micro controller module adopts single-chip microcomputer MSP430F155 to realize in the utility model, and A/D change-over circuit module and D/A change-over circuit module all are integrated in described single-chip microcomputer MSP430F155 inside, and circuit structure is simple, and is reasonable in design, volume is little, and is easy to carry and use.
2, the utility model test safety performance is good; the functional reliability height; between controlled voltage source and tested transistor, be connected to the overvoltage crowbar module; be connected to the current foldback circuit module between described staircase waveform constant current source and the tested transistor, can prevent the generation of the mishap that short circuit or tester's maloperation bring effectively.
3, the utility model data processing both can be finished by micro controller module, also can finish testing efficiency height, measuring accuracy height by host computer bigger by internal memory, that data storage processing is with better function.
4, realization cost of the present utility model is low, and triode characterisitic parameter convenient test is convenient to popular popularizing and is used.
In sum, the utility model is simple in structure, and is reasonable in design, and volume is little, easy to carry and use, the testing efficiency height, and the measuring accuracy height, the functional reliability height realizes that cost is low, is convenient to popular popularizing and uses.
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Description of drawings
Fig. 1 is a schematic block circuit diagram of the present utility model.
Fig. 2 is the utility model base voltage testing circuit module and the circuit theory diagrams that detect the transfer relay circuit module.
Fig. 3 is the circuit theory diagrams of the utility model overvoltage crowbar module.
Description of reference numerals:
1-micro controller module; 2-serial communication circuit module; 3-host computer;
4-power module; 5-tested transistor; 6-controlled voltage source;
7-staircase waveform constant current source; 8-A/D change-over circuit module; 9-keyboard circuit module;
10-base voltage testing circuit module; 11-collector voltage testing circuit module;
12-D/A change-over circuit module; 13-liquid crystal display circuit module;
14-selection relay circuit module; 15-detection transfer relay circuit module;
16-overvoltage crowbar module; 17-current foldback circuit module.
Embodiment
As shown in Figure 1, the utility model comprises micro controller module 1, the serial communication circuit module 2 of joining with described micro controller module 1 and the host computer 3 that joins with described serial communication circuit module 2, and be used to each electricity consumption module for power supply in the system power module 4, be used to tested transistor 5 that the controlled voltage source 6 of collector voltage is provided and be used to tested transistor 5 that the staircase waveform constant current source 7 of base current is provided; The input end of described micro controller module 1 is connected to A/D change-over circuit module 8 and is used to import the keyboard circuit module 9 of controlled variable, the input end of described A/D change-over circuit module 8 is connected to and is used for the base voltage testing circuit module 10 that the base voltage to tested transistor 5 detects and is used for the collector voltage testing circuit module 11 that the collector voltage to tested transistor 5 detects, the output terminal of described micro controller module 1 is connected to D/A change-over circuit module 12, liquid crystal display circuit module 13, be used to realize the selection relay circuit module 14 of the positive and negative switching of controlled voltage source 6 output voltages and be used to realize that negative-positive-negative transistor and positive-negative-positive transistor base voltage detect the detection transfer relay circuit module 15 that switches, described controlled voltage source 6 and staircase waveform constant current source 7 all join with the output terminal of described D/A change-over circuit module 12, described selection relay circuit module 14 and detect transfer relay circuit module 15 and all join with the output terminal of described micro controller module 1, described controlled voltage source 6 joins with described selection relay circuit module 14, and described base voltage testing circuit module 10 is joined with described detection transfer relay circuit module 15.
In the present embodiment, be connected to overvoltage crowbar module 16 between described controlled voltage source 6 and the tested transistor 5, be connected to current foldback circuit module 17 between described staircase waveform constant current source 7 and the tested transistor 5; Can prevent the generation of the mishap that short circuit or tester's maloperation bring.Described micro controller module 1 is single-chip microcomputer MSP430F155, and described A/D change-over circuit module 8 and D/A change-over circuit module 12 all are integrated in described single-chip microcomputer MSP430F155 inside.Single-chip microcomputer MSP430F155 is 16 super low power consuming single chip processors, and data-handling capacity is strong, and inner integrated A/D change-over circuit module 8 is 12 A/D converters, and inner integrated D/A change-over circuit module 12 is 12 D/A converters.
In conjunction with Fig. 2, in the present embodiment, described base voltage testing circuit module 10 is by the first chip OP07-1 and the second chip OP07-2, and resistance R 1, R2, R3 and R4 constitute; Described detection transfer relay circuit module 15 is made of relay SRD-S-112D and triode Q7; The pin 5 of the described first chip OP07-1 joins with the base stage b of described tested transistor 5, one end of the pin 4 of the described first chip OP07-1 and pin 12 and resistance R 1 and an end of resistance R 2 all with described power module 4+the 15V voltage output end joins, the other end ground connection of described resistance R 1, the pin 2 of the described first chip OP07-1, one end of the other end of resistance R 2 and resistance R 3 all joins with the pin 5 of described relay SRD-S-112D, the pin 5 of the described second chip OP07-2 and an end of resistance R 4 all join with the other end of described resistance R 3, pin 4 ground connection of the described second chip OP07-2, the pin 12 of the described second chip OP07-2 and described power module 4+the 15V voltage output end joins, the pin 3 of the described first chip OP07-1 and the pin 3 of the second chip OP07-2 all with described power module 4-the 15V voltage output end joins, the pin 2 of the described second chip OP07-2 and the other end of resistance R 4 all join with the pin 4 of described relay SRD-S-112D, the pin 2 of described relay SRD-S-112D joins with the input end of described A/D change-over circuit module 8, the pin 1 of described relay SRD-S-112D and described power module 4+the 12V voltage output end joins, the pin 3 of described relay SRD-S-112D joins with the collector of described triode Q7, the output terminal of the base stage of described triode Q7 and described micro controller module 1 joins, the grounded emitter of described triode Q7.During work, when tested transistor 5 is NPN type triode, micro controller module 1 pilot relay SRD-S-112D connects the first chip OP07-1, when tested transistor 5 is the positive-negative-positive triode, micro controller module 1 pilot relay SRD-S-112D connects the second chip OP07-2, has so just finished the switching that negative-positive-negative transistor and positive-negative-positive transistor base voltage detect.The circuit of described base voltage testing circuit module 10 is realized simple, and control is convenient, controls as long as take the IO port of single-chip microcomputer MSP430F155.
In the present embodiment, described liquid crystal display circuit module 13 mainly is made of the dual-purpose LCD MODULE of OCMJ4X8C Chinese figure.
In conjunction with Fig. 3, in the present embodiment, described overvoltage crowbar module 16 is by the first chip OP27-1 and the second chip OP27-2, commutation diode D1 and D2, and resistance R 5, R6, R7, R8, R9, R10 and R11 constitute; One end of described resistance R 5 and an end of resistance R 8 all join with the output terminal of described controlled voltage source 6, the pin 2 of the described first chip OP27-1 and the other end of described resistance R 5, one end of resistance R 7 and the negative pole of commutation diode D1 join, the pin 3 of the described first chip OP27-1 is by resistance R 6 ground connection, the pin 6 of the described first chip OP27-1 joins with the positive pole of described commutation diode D1 and the negative pole of commutation diode D2, one end of the positive pole of the other end of described resistance R 7 and described commutation diode D2 and resistance R 9 joins, the other end of described resistance R 8, one end of the other end of resistance R 9 and resistance R 11 all joins with the pin 2 of the described second chip OP27-2, the pin 6 of the described second chip OP27-2 and the other end of resistance R 11 all join with the collector c of described tested transistor 5, and the pin 3 of the described second chip OP27-2 is by resistance R 10 ground connection.
The principle of work of the present utility model and the course of work are: at first, by operating keyboard circuit module 9 or host computer 3 input controlled variable, for example select the transistor characteristic that needs measurement and show; Then, system enters automatic testing process, micro controller module 1 is by D/A change-over circuit module 12 control controlled voltage source 6 and staircase waveform constant current sources 7, controlled voltage source 6 provides collector voltage for tested transistor 5, and staircase waveform constant current source 7 provides base current for tested transistor 5; System at first is defined as the NPN type with tested transistor 5, the base voltage of 10 pairs of tested transistors 5 of base voltage testing circuit module detects and detected signal is exported to A/D change-over circuit module 8, the collector voltage of 11 pairs of tested transistors 5 of collector voltage testing circuit module detects and detected signal is exported to A/D change-over circuit module 8, A/D change-over circuit module 8 is exported to micro controller module 1 after its analog voltage amount that receives is converted to digital quantity, and micro controller module 1 is according to the base voltage V of tested transistor 5
bWith collector voltage V
cValue judge the type of tested transistor 5, when being judged as the NPN type, micro controller module 1 is just by control detection transfer relay circuit module 15, control base voltage testing circuit module 10 keeps choosing the sample port of NPN type transistor, and by control selection relay circuit module 14, control controlled voltage source 6 output positive voltages, then, micro controller module 1 carries out analyzing and processing to its data that receive, according to controlled variable by operating keyboard circuit module 9 or host computer 3 inputs, base voltage measured value with tested transistor 5, the collector voltage measured value, the direct current enlargement factor, exchange enlargement factor, input characteristic curve or output characteristic curve demonstration directly are presented on the liquid crystal display circuit module 13, perhaps are transferred to host computer 3 by serial communication circuit module 2 and show; When being judged as positive-negative-positive, micro controller module 1 is just by control detection transfer relay circuit module 15, control base voltage testing circuit module 10 switches on the sample port of positive-negative-positive transistor, and by control selection relay circuit module 14, control controlled voltage source 6 output negative voltages, then, micro controller module 1 carries out analyzing and processing to its data that receive again, according to controlled variable by operating keyboard circuit module 9 or host computer 3 inputs, base voltage measured value with tested transistor 5, the collector voltage measured value, the direct current enlargement factor, exchange enlargement factor, input characteristic curve or output characteristic curve demonstration directly are presented on the liquid crystal display circuit module 13, perhaps are transferred to host computer 3 by serial communication circuit module 2 and show.
In addition, in the above course of work, micro controller module 1 also can an analyzing and processing obtains the base voltage measured value and the collector voltage measured value of tested transistor 5, and it is bigger to give internal memory with remaining data processing task, the host computer 3 that data storage processing is with better function, the direct current enlargement factor that host computer 3 obtains tested transistor 5 according to the base voltage measured value and the collector voltage measured value analyzing and processing of tested transistor 5, exchange enlargement factor, input characteristic curve and output characteristic curve, store, directly be presented on the host computer 3, or being transferred to micro controller module 1 by serial communication circuit module 2,13 pairs of test parameters of micro controller module 1 control liquid crystal display circuit module show.Because host computer 3 internal memories are big, the data storage processing function is strong, so test data is easy to be converted to form such as chart and data intuitively, and can preserve so that use in the future.
The above; it only is preferred embodiment of the present utility model; be not that the utility model is imposed any restrictions; everyly any simple modification that above embodiment did, change and equivalent structure are changed, all still belong in the protection domain of technical solutions of the utility model according to the utility model technical spirit.
Claims (6)
1. transistor characterisitic parameter test macro, it is characterized in that: comprise micro controller module (1), the serial communication circuit module (2) of joining with described micro controller module (1) and the host computer (3) that joins with described serial communication circuit module (2), and be used to each electricity consumption module for power supply in the system power module (4), be used to tested transistor (5) that the controlled voltage source (6) of collector voltage is provided and be used to tested transistor (5) that the staircase waveform constant current source (7) of base current is provided; The input end of described micro controller module (1) is connected to A/D change-over circuit module (8) and is used to import the keyboard circuit module (9) of controlled variable, the input end of described A/D change-over circuit module (8) is connected to and is used for the base voltage testing circuit module (10) that the base voltage to tested transistor (5) detects and is used for the collector voltage testing circuit module (11) that the collector voltage to tested transistor (5) detects, the output terminal of described micro controller module (1) is connected to D/A change-over circuit module (12), liquid crystal display circuit module (13), be used to realize the selection relay circuit module (14) of the positive and negative switching of controlled voltage source (6) output voltage and be used to realize negative-positive-negative transistor and the detection transfer relay circuit module (15) of positive-negative-positive transistor base voltage detection switching, described controlled voltage source (6) and staircase waveform constant current source (7) all join with the output terminal of described D/A change-over circuit module (12), described selection relay circuit module (14) and detect transfer relay circuit module (15) and all join with the output terminal of described micro controller module (1), described controlled voltage source (6) joins with described selection relay circuit module (14), and described base voltage testing circuit module (10) is joined with described detection transfer relay circuit module (15).
2. according to the described a kind of transistor characterisitic parameter test macro of claim 1; it is characterized in that: be connected to overvoltage crowbar module (16) between described controlled voltage source (6) and the tested transistor (5), be connected to current foldback circuit module (17) between described staircase waveform constant current source (7) and the tested transistor (5).
3. according to claim 1 or 2 described a kind of transistor characterisitic parameter test macros, it is characterized in that: described micro controller module (1) is single-chip microcomputer MSP430F155, and described A/D change-over circuit module (8) and D/A change-over circuit module (12) all are integrated in described single-chip microcomputer MSP430F155 inside.
4. according to claim 1 or 2 described a kind of transistor characterisitic parameter test macros, it is characterized in that: described base voltage testing circuit module (10) is by the first chip OP07-1 and the second chip OP07-2, and resistance R 1, R2, R3 and R4 constitute; Described detection transfer relay circuit module (15) is made of relay SRD-S-112D and triode Q7; The pin 5 of the described first chip OP07-1 joins with the base stage b of described tested transistor (5), one end of the pin 4 of the described first chip OP07-1 and pin 12 and resistance R 1 and an end of resistance R 2 all with described power module (4)+the 15V voltage output end joins, the other end ground connection of described resistance R 1, the pin 2 of the described first chip OP07-1, one end of the other end of resistance R 2 and resistance R 3 all joins with the pin 5 of described relay SRD-S-112D, the pin 5 of the described second chip OP07-2 and an end of resistance R 4 all join with the other end of described resistance R 3, pin 4 ground connection of the described second chip OP07-2, the pin 12 of the described second chip OP07-2 and described power module (4)+the 15V voltage output end joins, the pin 3 of the described first chip OP07-1 and the pin 3 of the second chip OP07-2 all with described power module (4)-the 15V voltage output end joins, the pin 2 of the described second chip OP07-2 and the other end of resistance R 4 all join with the pin 4 of described relay SRD-S-112D, the pin 2 of described relay SRD-S-112D joins with the input end of described A/D change-over circuit module (8), the pin 1 of described relay SRD-S-112D and described power module (4)+the 12V voltage output end joins, the pin 3 of described relay SRD-S-112D joins with the collector of described triode Q7, the output terminal of the base stage of described triode Q7 and described micro controller module (1) joins, the grounded emitter of described triode Q7.
5. according to claim 1 or 2 described a kind of transistor characterisitic parameter test macros, it is characterized in that: described liquid crystal display circuit module (13) mainly is made of the dual-purpose LCD MODULE of OCMJ4X8C Chinese figure.
6. according to the described a kind of transistor characterisitic parameter test macro of claim 2, it is characterized in that: described overvoltage crowbar module (16) is by the first chip OP27-1 and the second chip OP27-2, commutation diode D1 and D2, and resistance R 5, R6, R7, R8, R9, R10 and R11 constitute; One end of described resistance R 5 and an end of resistance R 8 all join with the output terminal of described controlled voltage source (6), the pin 2 of the described first chip OP27-1 and the other end of described resistance R 5, one end of resistance R 7 and the negative pole of commutation diode D1 join, the pin 3 of the described first chip OP27-1 is by resistance R 6 ground connection, the pin 6 of the described first chip OP27-1 joins with the positive pole of described commutation diode D1 and the negative pole of commutation diode D2, one end of the positive pole of the other end of described resistance R 7 and described commutation diode D2 and resistance R 9 joins, the other end of described resistance R 8, one end of the other end of resistance R 9 and resistance R 11 all joins with the pin 2 of the described second chip OP27-2, the pin 6 of the described second chip OP27-2 and the other end of resistance R 11 all join with the collector c of described tested transistor (5), and the pin 3 of the described second chip OP27-2 is by resistance R 10 ground connection.
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| CN 201320083798 CN203084152U (en) | 2013-02-24 | 2013-02-24 | Triode transistor characteristic parameter testing system |
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| CN 201320083798 CN203084152U (en) | 2013-02-24 | 2013-02-24 | Triode transistor characteristic parameter testing system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103592589A (en) * | 2013-10-30 | 2014-02-19 | 江苏绿扬电子仪器集团有限公司 | Digital storage transistor characteristic graphic instrument test system |
| CN110441668A (en) * | 2019-08-19 | 2019-11-12 | 西安易恩电气科技有限公司 | A kind of high-power IGBT test macro |
| CN110596575A (en) * | 2019-10-16 | 2019-12-20 | 岭南师范学院 | Triode amplifying circuit characteristic detection system and method |
| CN113805030A (en) * | 2021-09-24 | 2021-12-17 | 桂林航天工业学院 | Transistor parameter intelligent detection system based on singlechip |
-
2013
- 2013-02-24 CN CN 201320083798 patent/CN203084152U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103592589A (en) * | 2013-10-30 | 2014-02-19 | 江苏绿扬电子仪器集团有限公司 | Digital storage transistor characteristic graphic instrument test system |
| CN110441668A (en) * | 2019-08-19 | 2019-11-12 | 西安易恩电气科技有限公司 | A kind of high-power IGBT test macro |
| CN110596575A (en) * | 2019-10-16 | 2019-12-20 | 岭南师范学院 | Triode amplifying circuit characteristic detection system and method |
| CN113805030A (en) * | 2021-09-24 | 2021-12-17 | 桂林航天工业学院 | Transistor parameter intelligent detection system based on singlechip |
| CN113805030B (en) * | 2021-09-24 | 2023-09-05 | 桂林航天工业学院 | Transistor parameter intelligent detection system based on singlechip |
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Granted publication date: 20130724 Termination date: 20140224 |