CN203011560U - Silicon carbide temperature sensor - Google Patents

Silicon carbide temperature sensor Download PDF

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CN203011560U
CN203011560U CN 201220734974 CN201220734974U CN203011560U CN 203011560 U CN203011560 U CN 203011560U CN 201220734974 CN201220734974 CN 201220734974 CN 201220734974 U CN201220734974 U CN 201220734974U CN 203011560 U CN203011560 U CN 203011560U
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contact electrode
type sic
layer
temperature sensor
ohmic contact
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CN 201220734974
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张�林
李演明
邱彦章
巨永锋
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Changan University
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Changan University
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Abstract

The utility model discloses a silicon carbide temperature sensor comprising a substrate constituted by N-type Sic chips and an N-type Sic extension layer disposed on an upper part of the substrate. A middle part of an upper part of the N-type Sic extension layer is provided with a circular schottky contact electrode. And an outer side of the schottky contact electrode on the N-type Sic extension layer is provided with a circular N-type Sic ohmic contact doped zone. An upper part of the N-type Sic ohmic contact doped zone is provided with a circular ohmic contact electrode. The N-type Sic ohmic contact doped zone, the ohmic contact electrode, and the schottky contact electrode are coaxially arranged. The upper part of the N-type Sic extension layer, which is disposed between the ohmic contact electrode and the schottky contact electrode, and the upper part of the N-type Sic extension layer disposed on an outer periphery of the ohmic contact electrode are respectively provided with a silicon dioxide layer. The silicon carbide temperature sensor has advantages of reasonable, novel design, good linearity and packaging density, high working reliability, strong practicability, wide application range, high promotion application value, and ability of facilitating integration.

Description

A kind of silit temperature sensor
Technical field
The utility model relates to technical field of semiconductor device, especially relates to a kind of silit temperature sensor.
Background technology
Temperature sensor is one of most widely used sensor, from household electrical appliances, automotive electronics, field of power electronics until space flight, geology, resources domain etc., and the device that all needs to have the temperature sensing function.Traditional temperature sensor type has thermopair, thermistor, resistance temperature detector and semiconductor temperature sensor etc.
In numerous sensor types, that semiconductor temperature sensor has is highly sensitive, volume is little, low in energy consumption, time constant is little, antijamming capability is strong, the plurality of advantages such as easy of integration, and becomes the first-selection in temperature sensor.But due to the restriction of material behavior, the temperature sensor of traditional semi-conducting material manufacturing can not at high temperature be worked, and for example the effective temperature-measuring range of Si temperature sensor is 0～150 ℃; And along with the development of science and technology, increasing field such as space flight, aviation, military affairs, petroleum prospecting, nuclear energy, communication etc., microelectronic component and circuit need to be operated under the hot environment of 250 ℃～600 ℃.At this moment traditional silica-based temperature sensor is not competent.Seek a kind of novel, focus that the semiconductor material with unique physical property and electrical properties that can satisfy high-temperature severe environment work has become semiconductor applications.In recent years, a kind of material in third generation semiconductor material---silit (SiC) development is swift and violent, becomes the study hotspot in high-temperature electronic field.
Silit (Silicon Carbide, be called for short SiC) is the comparatively ripe wide bandgap semiconductor materials of a kind of present development, becomes the semiconductor material of microelectronic component of new generation and circuit after Si and GaAs with its good physics and electric property.Compare with the conventional semiconductor material that Si and GaAs are representative, SiC has the advantages such as broad-band gap, high breakdown field strength, high heat conductance, and its superior performance can satisfy modern electronic technology to the requirement of high temperature radioresistance and high-frequency high-power.
In numerous SiC devices, SiC SBD is present the most ripe and commercial SiC device, has that technique is simple, hot properties good, high reliability, is as the optimal SiC device of temperature sensor.Temperature sensor measurement temperature based on SiC SBD can reach 500 ℃, has improved nearly 3 times than common Si based sensor.And the SiC Schottky-barrier diode is easy to be integrated in circuit as a kind of active semiconductor device; Especially can directly be integrated on the SiC device and integrated circuit that is about to be widely used.Not only can both save circuit cost, and can not increase again the package dimension of circuit, have a wide range of applications in Aero-Space, chemical industry, mineral mining processing and other fields.
The ultimate principle of SiC high temperature sensor is to have linear relationship between the forward voltage drop of SiC SBD and device temperature change.The forward I-V characteristic conforms thermionic emission theory of SiC SBD, that is:
I = I s [ exp ( qV nkT ) - 1 ] - - - ( 1 )
Wherein
Figure BDA00002668132300022
Be reverse saturation current, n is ideal factor, φ BSchottky barrier height, A *Be the Richardson constant, A is device area.
When current constant that device passes through, both sides can get the temperature differentiate:
Figure BDA00002668132300023
Draw thus, in certain temperature range, as long as thermionic emission theory is set up, have linear relationship between device forward voltage drop and temperature variation.By test and the conversion to the forward pressure drop, can obtain the temperature of sensor environment of living in.
Although SiC SBD temperature sensor has had some reports and shown the superiority of its part, the SiC high temperature sensor wants in high-temperature electronic field widespread use, also has some problems to need to solve:
(1) during hot operation, the bulk resistor of SiC device can vary with temperature and change, and makes the V-T characteristic no longer change according to linear rule, thereby has affected the linearity of temperature sensor;
(2) present silit temperature sensor of the prior art is vertical structure mostly, makes the volume of temperature sensor be difficult to reduce, and is difficult to integrated.
The utility model content
Technical problem to be solved in the utility model is for above-mentioned deficiency of the prior art, a kind of silit temperature sensor is provided, it is rationally novel in design, realization is convenient and cost is low, and the linearity and packaging density are good, are conducive to integrated, functional reliability is high, practical, applied range, application value is high.
for solving the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of silit temperature sensor, it is characterized in that: comprise the substrate that is consisted of by N-type SiC substrate and the N-type SiC epitaxial loayer that is arranged on described substrate top, described N-type SiC epitaxial loayer upper middle position place is provided with circular Schottky contact electrode, the arranged outside that is positioned at described Schottky contact electrode on described N-type SiC epitaxial loayer has the N-type SiC Ohmic contact doped region of annular, described N-type SiC Ohmic contact doped region top is provided with the Ohm contact electrode of annular, described N-type SiC Ohmic contact doped region, Ohm contact electrode and Schottky contact electrode arrange with one heart, N-type SiC epitaxial loayer top between described Ohm contact electrode and Schottky contact electrode, and the N-type SiC epitaxial loayer top that is positioned at described Ohm contact electrode periphery is provided with silicon dioxide layer.
Above-mentioned a kind of silit temperature sensor is characterized in that: the thickness of described N-type SiC epitaxial loayer is 1 μ m～5 μ m.
Above-mentioned a kind of silit temperature sensor, it is characterized in that: the radius of described Schottky contact electrode is 0.5 μ m～2 μ m, the inside radius of described Ohm contact electrode and the difference of external radius are 0.5 μ m～2 μ m, and the difference of the inside radius of described Ohm contact electrode and the radius of described Schottky contact electrode is 1 μ m～2 μ m.
Above-mentioned a kind of silit temperature sensor, it is characterized in that: described Ohm contact electrode is made of from top to bottom Ni layer, a Pt layer and an Au layer successively, the thickness of described Ni layer is 200nm～400nm, the thickness of a described Pt layer is 50nm～200nm, and the thickness of a described Au layer is 200nm～1000nm.
Above-mentioned a kind of silit temperature sensor, it is characterized in that: described Schottky contact electrode is made of from top to bottom Pt layer and the 2nd Au layer successively, the thickness of described Pt layer is 200nm～500nm, and the thickness of described the 2nd Au layer is 200nm～1000nm.
Above-mentioned a kind of silit temperature sensor is characterized in that: the thickness of described silicon dioxide layer is 10nm～50nm.
The utility model compared with prior art has the following advantages:
1, the utility model has adopted transversary, and is rationally novel in design, there is no the impact of substrate during work, therefore easily obtains the resistance in series lower than vertical structure.
2, the utility model has adopted the structure that the Ohm contact electrode of annular surrounds circular Schottky contact electrode, can effectively reduce the leakage current of Schottky contact electrode, reduces resistance in series.
3, the utility model adopts Pt metal as the schottky metal electrode, adopts metal A u as encapsulation, and has carried out the thermal anneal process processing, has effectively improved the stability of Schottky contacts.
4, the utility model owing to having adopted transversary, therefore can dwindle by the attenuate substrate volume of sensor, improves packaging density, is conducive to integrated and reduced volume, and has promoted the linearity of temperature sensor, is conducive to improve accuracy of detection.
5, manufacturing process of the present utility model is simple, and realization is convenient and cost is low.
6, the utility model is compared with Si temperature sensor of the prior art, probe temperature has improved nearly 3 times, compare with the silit temperature sensor of vertical structure in prior art, the linearity is good, functional reliability is high, and is practical, can be widely used in the fields such as space flight, aviation, military affairs, petroleum prospecting, nuclear energy, communication, applied range, application value is high.
In sum, the utility model is novel in design rationally, realize convenient and cost low, the linearity and packaging density are good, are conducive to integratedly, functional reliability is high, and is practical, applied range, application value is high.
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Description of drawings
Fig. 1 is front view of the present utility model.
Fig. 2 is vertical view of the present utility model.
Description of reference numerals:
The 1-substrate; 2-N type SiC epitaxial loayer; 3-N type SiC Ohmic contact doped region;
4-Ohm contact electrode; 5-Schottky contact electrode; 6-silicon dioxide layer.
Embodiment
as depicted in figs. 1 and 2, the utility model comprises the substrate 1 that is made of N-type SiC substrate and the N-type SiC epitaxial loayer 2 that is arranged on described substrate 1 top, described N-type SiC epitaxial loayer 2 upper middle position places are provided with circular Schottky contact electrode 5, the arranged outside that is positioned at described Schottky contact electrode 5 on described N-type SiC epitaxial loayer 2 has the N-type SiC Ohmic contact doped region 3 of annular, described N-type SiC Ohmic contact doped region 3 tops are provided with the Ohm contact electrode 4 of annular, described N-type SiC Ohmic contact doped region 3, Ohm contact electrode 4 and Schottky contact electrode 5 arrange with one heart, N-type SiC epitaxial loayer 2 tops between described Ohm contact electrode 4 and Schottky contact electrode 5, and N-type SiC epitaxial loayer 2 tops that are positioned at described Ohm contact electrode 4 peripheries are provided with silicon dioxide layer 6.
In the present embodiment, the thickness of described N-type SiC epitaxial loayer 2 is 1 μ m～5 μ m.The radius of described Schottky contact electrode 5 is 0.5 μ m～2 μ m, the inside radius of described Ohm contact electrode 4 and the difference of external radius are 0.5 μ m～2 μ m, and the difference of the radius of the inside radius of described Ohm contact electrode 4 and described Schottky contact electrode 5 is 1 μ m～2 μ m.Described Ohm contact electrode 4 is made of from top to bottom Ni layer, a Pt layer and an Au layer successively, and the thickness of described Ni layer is 200nm～400nm, and the thickness of a described Pt layer is 50nm～200nm, and the thickness of a described Au layer is 200nm～1000nm.Described Schottky contact electrode 5 is made of from top to bottom the 2nd Pt layer and the 2nd Au layer successively, and the thickness of described the 2nd Pt layer is 200nm～500nm, and the thickness of described the 2nd Au layer is 200nm～1000nm.The thickness of described silicon dioxide layer 6 is 10nm～50nm.
During concrete enforcement, manufacture method of the present utility model comprises the following steps:
Step 1, provide substrate 1, described substrate is made of N-type SiC substrate;
Step 2, employing low pressure hot wall chemical vapor deposition method epitaxial growth doping content on the upper surface of described substrate 1 are 1 * 10 15cm -3～1 * 10 16cm -3, thickness is the N-type SiC epitaxial loayer 2 of 1 μ m～5 μ m, epitaxially grown temperature is 1570 ℃, epitaxially grown pressure is 100mbar, epitaxially grown gas is that volume ratio is the C of 2:1:4 3H 8, SiH 4And H 2Mixed gas;
Step 3, the doping content that adopts ion injection method to form annular on described N-type SiC epitaxial loayer 2 are 1 * 10 18cm -3～1 * 10 19cm -3N-type SiC Ohmic contact doped region 3, and to carry out temperature under Ar atmosphere be the thermal annealing 10 minutes of 1550 ℃～1650 ℃;
Step 4, to form thickness by the dry-oxygen oxidation method on described N-type SiC epitaxial loayer 2 tops at the temperature of 1150 ℃ be the silicon dioxide layer 6 of 10nm～50nm;
Step 5, erosion removal are positioned at the silicon dioxide layer 6 of described N-type SiC Ohmic contact doped region 3 tops, form a ring-like window that exposes described N-type SiC Ohmic contact doped region 3, at first adopt electron beam evaporated metal Ni and Pt successively in described ring-like window, and at N 2Carry out temperature under atmosphere and be the thermal annealing 2 minutes of 950 ℃～1050 ℃, and then adopt electron beam evaporation metal A u, form on the top of described N-type SiC Ohmic contact doped region 3 Ohm contact electrode 4 that is consisted of by Ni layer, a Pt layer and an Au layer; Wherein, the thickness of described Ni layer is 200nm～400nm, and the thickness of a described Pt layer is 50nm～200nm, and the thickness of a described Au layer is 200nm～1000nm;
Step 6, erosion removal are positioned at the silicon dioxide layer 6 of described N-type SiC epitaxial loayer 2 tops, place, centre position, form a circular window that exposes described N-type SiC epitaxial loayer 2 centre positions, splash-proofing sputtering metal Pt and Au successively in described circular window form the Schottky contact electrode 5 that is made of the 2nd Pt layer and the 2nd Au layer; Wherein, the thickness of described the 2nd Pt layer is 200nm～500nm, and the thickness of described the 2nd Au layer is 200nm～1000nm;
Step 7, at N 2Carry out temperature under atmosphere and be the thermal annealing 2 minutes of 450 ℃～500 ℃.
The above; it is only preferred embodiment of the present utility model; be not that the utility model is imposed any restrictions; every any simple modification, change and equivalent structure of above embodiment being done according to the utility model technical spirit changes, and all still belongs in the protection domain of technical solutions of the utility model.

Claims (6)

1. silit temperature sensor, it is characterized in that: comprise the substrate (1) that is consisted of by N-type SiC substrate and be arranged on the N-type SiC epitaxial loayer (2) on described substrate (1) top, described N-type SiC epitaxial loayer (2) upper middle position place is provided with circular Schottky contact electrode (5), the arranged outside that is positioned at described Schottky contact electrode (5) on described N-type SiC epitaxial loayer (2) has the N-type SiC Ohmic contact doped region (3) of annular, described N-type SiC Ohmic contact doped region (3) top is provided with the Ohm contact electrode (4) of annular, described N-type SiC Ohmic contact doped region (3), Ohm contact electrode (4) and Schottky contact electrode (5) arrange with one heart, be positioned at N-type SiC epitaxial loayer (2) top between described Ohm contact electrode (4) and Schottky contact electrode (5), and be positioned at described Ohm contact electrode (4) peripheral N-type SiC epitaxial loayer (2) top and be provided with silicon dioxide layer (6).
2. according to a kind of silit temperature sensor claimed in claim 1, it is characterized in that: the thickness of described N-type SiC epitaxial loayer (2) is 1 μ m～5 μ m.
3. according to a kind of silit temperature sensor claimed in claim 1, it is characterized in that: the radius of described Schottky contact electrode (5) is 0.5 μ m～2 μ m, the inside radius of described Ohm contact electrode (4) and the difference of external radius are 0.5 μ m～2 μ m, and the difference of the radius of the inside radius of described Ohm contact electrode (4) and described Schottky contact electrode (5) is 1 μ m～2 μ m.
4. according to a kind of silit temperature sensor claimed in claim 1, it is characterized in that: described Ohm contact electrode (4) is made of from top to bottom Ni layer, a Pt layer and an Au layer successively, the thickness of described Ni layer is 200nm～400nm, the thickness of a described Pt layer is 50nm～200nm, and the thickness of a described Au layer is 200nm～1000nm.
5. according to a kind of silit temperature sensor claimed in claim 1, it is characterized in that: described Schottky contact electrode (5) is made of from top to bottom the 2nd Pt layer and the 2nd Au layer successively, the thickness of described Pt layer is 200nm～500nm, and the thickness of described the 2nd Au layer is 200nm～1000nm.
6. according to a kind of silit temperature sensor claimed in claim 1, it is characterized in that: the thickness of described silicon dioxide layer (6) is 10nm～50nm.
CN 201220734974 2012-12-27 2012-12-27 Silicon carbide temperature sensor Expired - Fee Related CN203011560U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104132740A (en) * 2014-07-24 2014-11-05 中国工程物理研究院核物理与化学研究所 Self-powered digital thermometer
CN104979407A (en) * 2014-04-11 2015-10-14 丰田合成株式会社 Semiconductor device and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104979407A (en) * 2014-04-11 2015-10-14 丰田合成株式会社 Semiconductor device and manufacturing method thereof
CN104979407B (en) * 2014-04-11 2017-12-05 丰田合成株式会社 The manufacture method of semiconductor device and semiconductor device
CN104132740A (en) * 2014-07-24 2014-11-05 中国工程物理研究院核物理与化学研究所 Self-powered digital thermometer

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Granted publication date: 20130619

Termination date: 20151227

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