CN202925146U - Single-crystal furnace and heater thereof - Google Patents
Single-crystal furnace and heater thereof Download PDFInfo
- Publication number
- CN202925146U CN202925146U CN 201220611236 CN201220611236U CN202925146U CN 202925146 U CN202925146 U CN 202925146U CN 201220611236 CN201220611236 CN 201220611236 CN 201220611236 U CN201220611236 U CN 201220611236U CN 202925146 U CN202925146 U CN 202925146U
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- well heater
- heater
- support portion
- single crystal
- leading surface
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Abstract
The utility model discloses a single-crystal furnace and a heater thereof. The heater comprises a heater body and a support part, wherein the heater body is in a cylindrical structure; the support part is arranged at one end of the heater body along the axis direction and forms a radial extension part extending inward along the radial direction; and the inner side end part of the radial extension part is provided with an oblique guide surface intersected with the bottom surface and guiding inward along the radial direction. When the silicon liquid leaks and flows onto the heater, due to the oblique guide surface located on the heater, the oblique guide surface realizes a liquid guide effect, the silicon liquid is prevented from flowing back along the lower end surface and directly flows onto a disc protection pressure sheet located above the furnace bottom along the oblique guide surface, and the occurrence of explosion accident caused by the silicon liquid flowing to the furnace bottom of the single-crystal furnace is avoided.
Description
Technical field
The utility model relates to technical field of solar batteries, in particular to a kind of single crystal growing furnace and well heater thereof.
Background technology
As the new forms of energy of clean environment firendly, the application of solar cell is more and more universal.In the making processes of solar cell, single crystal growing furnace is a kind of equipment commonly used, and it is a kind of in inert gas environment, adopts graphite resistance heater that silicon materials are melted, and adopts the equipment of Grown by CZ Method dislocation-free single crystal.
Single crystal growing furnace when operation due to stove in temperature higher, cause plumbago crucible and silicon vapor to react, use afterwards that the intensity of plumbago crucible can reduce for a long time, the plumbago crucible fracture accident appears.The gap that occurs after plumbago crucible fracture causes that easily the quartz crucible that is supported on the plumbago crucible upper end breaks, and causes being contained in the interior high temperature silicon liquid of quartz crucible and flows out from quartz crucible, flows down along the plumbago crucible breaking part.The interior heat generating components well heater that circumferentially is provided with the heating of confession single crystal growing furnace around quartz crucible of single crystal growing furnace.Well heater is one of important composition parts of thermal field of single crystal furnace, in the time of as shown in Figure 1, well heater comprises heater body 11 ', support portion 12 ' and guide face 13 ', wherein support portion 12 ' is the interconnecting piece of well heater and Graphite Electrodes, by the bolt that is arranged on well heater support portion 12 ', well heater is fixed on Graphite Electrodes.When high temperature silicon liquid flows down along the plumbago crucible breaking part, because the support portion 12 ' that is positioned at heater base is sitting under plumbago crucible, having silicon liquid flows on support portion 12 ', high temperature silicon liquid can flow directly on Graphite Electrodes along the end guide face 13 ' of support portion 12 ', finally flow to bottom Graphite Electrodes, scorch furnace bottom plate of single crystal furnace, may damage drop-bottom when serious, cause its inner water coolant to overflow.Because single crystal growing furnace is in the condition of high temperature, the water coolant that overflows is at high temperature vaporized, and causes furnace pressure to increase severely, the accident of easily blasting.
The utility model content
The utility model aims to provide a kind of single crystal growing furnace and well heater thereof, and in the time of can solving the plumbago crucible fracture, high temperature silicon liquid flows to and causes the explosive technical problem of single crystal growing furnace on the single crystal growing furnace base plate.
To achieve these goals, according to an aspect of the present utility model, provide a kind of single crystal furnace heater, having comprised: heater body, heater body is tubular structure; And the support portion, be arranged on heater body along an end of axis direction and form the radially extension that radially extends internally, radially the medial end of extension has with the bottom surface and intersects with the inside slant leading surface of water conservancy diversion radially.
Further, slant leading surface is the plane, and forms acute angle with the bottom surface.
Further, sharp angle α is set to 30≤α≤60.
Further, slant leading surface is arc.
Further, arc is the arc of indent.
Further, the crossing end in slant leading surface and bottom surface has the lug boss that protrudes from the bottom surface.
Further, the support portion is a plurality of, and a plurality of support portions circumferentially evenly arrange along heater body.
According to the application on the other hand, provide a kind of single crystal growing furnace, comprised quartz crucible and the well heater that arranges around the outer circumferential side of quartz crucible, well heater is above-mentioned any well heater.
Further, also comprise plumbago crucible, plumbago crucible is arranged between quartz crucible and well heater and is coating quartz crucible.
Further, also comprise Graphite Electrodes, wherein Graphite Electrodes is arranged on the lower end, support portion of well heater, and the support portion is bolted on Graphite Electrodes, and wherein the slant leading surface of support portion extends out to the radial outside of Graphite Electrodes.
using the technical solution of the utility model improves well heater, the support portion is set and radially extends internally by the end along axis direction in heater body and form radially extension, have with the bottom surface at the medial end of extension radially and intersect with the inside slant leading surface of water conservancy diversion radially, when silicon liquid generation leakage flows on well heater, owing to being positioned at the tilt existence of guide face of well heater, this slant leading surface has played the effect of liquid guide flow, prevented the phenomenon that silicon liquid refluxes along the lower surface, silicon liquid flows directly on the protection plate compressing tablet that is positioned at the furnace bottom top along slant leading surface like this, avoided silicon liquid to flow to the blast generation of accident of single crystal growing furnace furnace bottom.
Description of drawings
The Figure of description that consists of the application's a part is used to provide further understanding of the present utility model, and illustrative examples of the present utility model and explanation thereof are used for explaining the utility model, do not consist of improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 shows the structural representation of well heater of the prior art; And
Fig. 2 shows the structural representation according to the well heater of a kind of exemplary embodiments of the utility model;
Fig. 3 is the vertical view of Fig. 2; And
Fig. 4 shows the structural representation of the single crystal growing furnace that contains having heaters of the utility model exemplary embodiments.
Embodiment
Need to prove, in the situation that do not conflict, embodiment and the feature in embodiment in the application can make up mutually.Describe below with reference to the accompanying drawings and in conjunction with the embodiments the utility model in detail.
According to a kind of exemplary embodiments of the present utility model, single crystal furnace heater 10 comprises heater body 11 and support portion 12, wherein heater body 11 is tubular structure, support portion 12 be arranged on heater body 11 along an end of axis direction and form the radially extension that radially extends internally, radially the medial end of extension has with the bottom surface and intersects with the inside slant leading surface 13 of water conservancy diversion radially.
As shown in Figure 2 to Figure 3, slant leading surface 13 bit planes, and form acute angle with the bottom surface.Slant leading surface 13 with said structure has better guide functions, has avoided silicon liquid that the phenomenon that refluxes occurs along slant leading surface 13.Preferably, sharp angle α is set to 30≤α≤60.
According to a kind of preferred embodiment of the present utility model, slant leading surface 13 has with the end that intersect the bottom surface lug boss that protrudes from the bottom surface.End at slant leading surface 13 forms lug boss, has stopped silicon liquid fully and has occured along the phenomenon of bottom surface generation backflow.According to a kind of exemplary embodiments of the present utility model, support portion 12 is a plurality of, and a plurality of support portions 12 circumferentially arrange equably along heater body 11.Preferred support portion 12 is four, and the effect of supporting heater body 11 is played in the lower end that is arranged on equably tubular heater body 11.
According on the other hand of the present utility model, as shown in Figure 4, provide a kind of single crystal growing furnace.This single crystal growing furnace comprises quartz crucible 20 and the well heater 10 that arranges around the outer circumferential side of quartz crucible 20, and wherein well heater 10 is above-mentioned any well heater.Preferably, also comprise plumbago crucible 40, plumbago crucible 40 is arranged between quartz crucible 20 and well heater 10 and is coating quartz crucible 20.Well heater 10 is by Graphite Electrodes 30 energising heating, and plumbago crucible 40 transfers heat to quartz crucible 20, and wherein Graphite Electrodes 30 is arranged on 12 lower ends, support portion of well heater 10, and Graphite Electrodes 30 is fixedly connected with support portion 12 by bolt.Wherein the slant leading surface 13 of support portion 12 extends out to the radial outside of Graphite Electrodes 30.Single crystal growing furnace that employing has this practical well heater 10 has avoided silicon liquid to flow down along Graphite Electrodes 30 from the end of the support portion 12 of well heater 10, prevents from scorching furnace bottom plate of single crystal furnace, and then has avoided the Peril Incident generation.
from above description, can find out, the utility model the above embodiments have realized following technique effect: the support portion is set and radially extends internally and form radially extension by the end along axis direction in heater body, have with the bottom surface at the medial end of extension radially and intersect with the inside slant leading surface of water conservancy diversion radially, when silicon liquid generation leakage flows on well heater, owing to being positioned at the tilt existence of guide face of well heater, this slant leading surface has played the effect of liquid guide flow, prevented the phenomenon that silicon liquid refluxes along the lower surface, silicon liquid flows directly on the protection plate compressing tablet that is positioned at the furnace bottom top along slant leading surface like this, avoided silicon liquid to flow to the blast generation of accident of single crystal growing furnace furnace bottom.
The above is only preferred embodiment of the present utility model, is not limited to the utility model, and for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (10)
1. a single crystal furnace heater, is characterized in that, comprising:
Heater body (11), described heater body (11) is tubular structure; And
Support portion (12), be arranged on described heater body (11) along an end of axis direction and form the radially extension that radially extends internally, the medial end of described radially extension has with the bottom surface and intersects with the inside slant leading surface (13) of water conservancy diversion radially.
2. well heater according to claim 1, is characterized in that, described slant leading surface (13) is the plane, and form acute angle with described bottom surface.
3. well heater according to claim 2, is characterized in that, described sharp angle α is set to 30≤α≤60.
4. well heater according to claim 1, is characterized in that, described slant leading surface (13) is arc.
5. well heater according to claim 4, is characterized in that, described arc is the arc of indent.
6. well heater according to claim 1, is characterized in that, described slant leading surface (13) has with the end that intersect described bottom surface the lug boss that protrudes from described bottom surface.
7. well heater according to claim 1, is characterized in that, described support portion (12) are a plurality of, and a plurality of described support portions (12) circumferentially evenly arrange along described heater body (11).
8. single crystal growing furnace comprises quartz crucible (20) and around the well heater (10) that the outer circumferential side of described quartz crucible (20) arranges, it is characterized in that described well heater (10) is the described well heater of any one in claim 1 to 7.
9. single crystal growing furnace according to claim 8, is characterized in that, also comprises plumbago crucible (40), and described plumbago crucible (40) is arranged between described quartz crucible (20) and described well heater (10) and is coating described quartz crucible (20).
10. single crystal growing furnace according to claim 8, it is characterized in that, also comprise Graphite Electrodes (30), wherein said Graphite Electrodes (30) is arranged on the lower end, support portion (12) of described well heater (10), described support portion (12) is bolted on described Graphite Electrodes (30), and the slant leading surface (13) of wherein said support portion (12) extends out to the radial outside of described Graphite Electrodes (30).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201220611236 CN202925146U (en) | 2012-11-16 | 2012-11-16 | Single-crystal furnace and heater thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201220611236 CN202925146U (en) | 2012-11-16 | 2012-11-16 | Single-crystal furnace and heater thereof |
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CN202925146U true CN202925146U (en) | 2013-05-08 |
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CN 201220611236 Expired - Fee Related CN202925146U (en) | 2012-11-16 | 2012-11-16 | Single-crystal furnace and heater thereof |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102925965A (en) * | 2012-11-16 | 2013-02-13 | 英利能源(中国)有限公司 | Single crystal furnace and heater thereof |
-
2012
- 2012-11-16 CN CN 201220611236 patent/CN202925146U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102925965A (en) * | 2012-11-16 | 2013-02-13 | 英利能源(中国)有限公司 | Single crystal furnace and heater thereof |
CN102925965B (en) * | 2012-11-16 | 2015-06-17 | 英利能源(中国)有限公司 | Single crystal furnace and heater thereof |
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Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130508 Termination date: 20161116 |