CN202907071U - Mute circuit realizing starting up by using MOS (metal oxide semiconductor) transistors and television provided with mute circuit - Google Patents

Mute circuit realizing starting up by using MOS (metal oxide semiconductor) transistors and television provided with mute circuit Download PDF

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Publication number
CN202907071U
CN202907071U CN 201220598280 CN201220598280U CN202907071U CN 202907071 U CN202907071 U CN 202907071U CN 201220598280 CN201220598280 CN 201220598280 CN 201220598280 U CN201220598280 U CN 201220598280U CN 202907071 U CN202907071 U CN 202907071U
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oxide
semiconductor
metal
circuit
mute
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CN 201220598280
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Chinese (zh)
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王伟
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Hisense Visual Technology Co Ltd
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Qingdao Hisense Xinxin Technology Co Ltd
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Abstract

The utility model relates to a mute circuit realizing starting up by using MOS (metal oxide semiconductor) transistors and a television provided with the mute circuit. The mute circuit comprises an audio output circuit and a power amplifier circuit. A first MOS transistor and a second MOS transistor are arranged on a line connecting the audio output circuit and the power amplifier circuit, wherein grid electrode ends of the first MOS transistor and the second MOS transistor are connected, and the grid electrode ends are connected to a mute control terminal on a mainboard circuit. The turn-off or turn-on operation of the first MOS transistor and the second MOS transistor is realized by setting a low level or a high level through the mute control terminal, thereby realizing the purpose of controlling starting up mute. Compared with a mute circuit in the prior art which realizes starting up by adopting a sound control chip, the mute circuit provided by the utility module is simple in structure, convenient to control, and small in the number of components, the reliability is high, and meanwhile, the manufacturing cost of the television is almost not increased.

Description

A kind of mute circuit and television set that uses metal-oxide-semiconductor to realize start
Technical field
The utility model belongs to technical field of television sets, particularly a kind of mute circuit of metal-oxide-semiconductor realization start and television set with described mute circuit of using.
Background technology
At present, the mostly external power amplifier of the high-end television sets on the market, therefore, requirement to turn-on muting is very high, even sneak into a little noise in the start process, through also listening to such an extent that be perfectly clear after the power amplifier amplification, traditional sound out-put circuit can't satisfy the requirement of odds and ends sound.
In the prior art, the main flow way that field of television is eliminated turn-on muting is that increase Sound control chip by the software control chip, and then prevents that the noise in the circuit from arriving power amplifier, realizes the purpose of turn-on muting.As shown in Figure 1, mute circuit adopts the DRV632 chip, the left and right sound channels voice output is connected on two input pins of DRV632 chip, by utilizing the active quiet control functional circuit of DRV632 built-in chip type, realization is without the audio frequency ON/OFF control of crack, and then the purpose of realization turn-on muting.
The inventor finds, has at least following technical problem in the prior art: it is various to have in the mute circuit of Sound control chip a component number, and circuit structure is complicated, and the mute circuit global reliability reduces, and manufacturing cost increases.
The utility model content
The purpose of the utility model embodiment is to propose a kind of mute circuit that uses metal-oxide-semiconductor to realize start, can effectively solve the technical problem that exists in the prior art.
To achieve these goals, the technical scheme that adopts is:
A kind of mute circuit that uses metal-oxide-semiconductor to realize start comprises audio output circuit and power amplifier, at the connection line of audio output circuit and power amplifier first, second metal-oxide-semiconductor is set; The gate terminal of first, second metal-oxide-semiconductor links to each other, and jointly is connected on the quiet control terminal of motherboard circuit.
During start, quiet control terminal is set to low level, and first, second metal-oxide-semiconductor all is in off state, and the voice signal of audio output circuit output can't arrive power amplifier, and then realizes turn-on muting; During normal operation, the pulse that does not have start to power on is disturbed, and quiet control terminal is set to high level, and first, second metal-oxide-semiconductor all is in conducting state, the sound of audio output circuit output arrives power amplifier by above-mentioned two metal-oxide-semiconductors, and amplifies output by power amplifier.
Preferably, described audio output circuit is provided with right channel sound lead-out terminal and L channel voice output terminal.
Preferably, the drain electrode end of described the first metal-oxide-semiconductor links to each other with described right channel sound lead-out terminal, and source terminal is connected on the described power amplifier.
Preferably, the drain electrode end of described the second metal-oxide-semiconductor links to each other with described L channel voice output terminal, and source terminal is connected on the described power amplifier.
Preferably, be provided with the first coupling capacitance between the drain electrode end of described the first metal-oxide-semiconductor and the described right channel sound lead-out terminal, an end of the first coupling capacitance is connected with the drain electrode end of the first metal-oxide-semiconductor, and the other end is connected with the right channel sound lead-out terminal.
The first coupling capacitance, the direct current signal interference that is used for removing right channel sound lead-out terminal output sound guarantees sound quality.
Preferably, be provided with the second coupling capacitance between the drain electrode end of described the second metal-oxide-semiconductor and the described L channel voice output terminal, an end of the second coupling capacitance is connected with the drain electrode end of the second metal-oxide-semiconductor, the other end and L channel sound output sub-connection.
The second coupling capacitance, the direct current signal interference that is used for removing L channel voice output terminal output sound guarantees sound quality.
Preferably, be provided with the first resistance on the connection line of described quiet control terminal and first, second metal-oxide-semiconductor gate terminal.
Preferably, be provided with the second resistance between the drain electrode end of described the first metal-oxide-semiconductor and the source terminal.
Preferably, be provided with the 3rd resistance between the drain electrode end of described the second metal-oxide-semiconductor and the source terminal.
The purpose of the utility model embodiment also is to propose a kind of television set, adopt aforesaid use metal-oxide-semiconductor to realize the mute circuit of start, television set is when start, above-mentioned two metal-oxide-semiconductors turn-off, do not have sound to arrive power amplifier, realize turn-on muting, after the normal startup of television set, above-mentioned two metal-oxide-semiconductor conductings, sound is normally exported; Mute circuit is simple in structure, reliability is high, increases hardly the manufacturing cost of television set.
To achieve these goals, the technical scheme that adopts is:
Television set adopts the use metal-oxide-semiconductor of mentioning such as above-mentioned embodiment to realize the mute circuit of start.
Compared with prior art, the utility model embodiment has following advantage:
The use metal-oxide-semiconductor that the utility model embodiment addresses is realized the mute circuit of start, by the connection line at audio output circuit and power amplifier coupling capacitance and metal-oxide-semiconductor are set, the gate terminal of metal-oxide-semiconductor is connected on the quiet control terminal of TV SKD circuit, by quiet control terminal is set to low level or is set to high level, realizing television set when the start or shutoff or the conducting of metal-oxide-semiconductor when normally moving, and then reach the quiet purpose of control television boot-strap.Mute circuit in the utility model, only by being set, can realize quiet control metal-oxide-semiconductor, realize the mute circuit of start compared to existing technology by increasing the Sound control chip, component number greatly reduces, circuit structure is simple, and convenient by software control, reliability and stability significantly improves, simultaneously, can increase hardly the manufacturing cost of television set.
Description of drawings
Fig. 1 is a kind of structural representation that uses the Sound control chip to realize the mute circuit of start in the prior art;
Fig. 2 is a kind of structural representation that uses metal-oxide-semiconductor to realize the mute circuit of start among the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing embodiment of the present utility model is further elaborated:
Embodiment 1
A kind of mute circuit that uses metal-oxide-semiconductor to realize start comprises audio output circuit and power amplifier; Audio output circuit is used for the control voice output; Power amplifier can amplify output with the voice signal of audio output circuit output; Connection line at audio output circuit and power amplifier is provided with first, second metal-oxide-semiconductor, when being respectively applied to realize starting shooting to the control of audio output circuit right channel sound and L channel sound.The first metal-oxide-semiconductor links to each other with the gate terminal of the second metal-oxide-semiconductor, and jointly is connected on the quiet control terminal of motherboard circuit.
During start, quiet control terminal is set to low level, and first, second metal-oxide-semiconductor all is in off state, and the voice signal of audio output circuit output can't arrive power amplifier, and then realizes turn-on muting.
During normal operation, after motherboard circuit monitors and does not have the pulse that powers on of start to disturb, quiet control terminal is set to high level, first, second metal-oxide-semiconductor all is in conducting state, the voice signal of audio output circuit output arrives power amplifier by metal-oxide-semiconductor, and amplifies output by power amplifier.
Compare with the mute circuit of available technology adopting Sound control chip realization start, the mute circuit that present embodiment 1 is addressed, simple in structure, the component number of employing is few, and is convenient by software control, has higher Stability and dependability.
Embodiment 2
In conjunction with shown in Figure 2, a kind of mute circuit that uses metal-oxide-semiconductor to realize start, comprise audio output circuit and power amplifier, connection line at audio output circuit and power amplifier is provided with first, second metal-oxide-semiconductor V1, V2, preferably, first, second metal-oxide-semiconductor V1, V2 select the SSM3K14T model.The gate terminal of the first metal-oxide-semiconductor V1 links to each other with the gate terminal of the second metal-oxide-semiconductor V2, and jointly is connected on the quiet control terminal MUTE_CONTROL of motherboard circuit, is controlled by quiet control terminal MUTE_CONTROL.Quiet control terminal MUTE_CONTROL has low level and two kinds of output states of high level.
Be provided with right channel sound lead-out terminal ROUT1 and L channel voice output terminal LOUT1 on the audio output circuit.
On the right channel sound outlet line, the drain electrode end of the first metal-oxide-semiconductor V1 links to each other with right channel sound lead-out terminal ROUT1, and source terminal is connected on the power amplifier.
Be provided with the first coupling capacitance C1 between the drain electrode end of the first metal-oxide-semiconductor V1 and the right channel sound lead-out terminal ROUT1, the end of the first coupling capacitance C1 is connected with the drain electrode end of the first metal-oxide-semiconductor V1, and the other end is connected with right channel sound lead-out terminal ROUT1.Connection line at the first coupling capacitance C1 and the first metal-oxide-semiconductor V1 drain electrode end is provided with earth resistance R4.
The first coupling capacitance C1, the direct current signal interference that is used for removing right channel sound lead-out terminal ROUT1 output sound guarantees sound quality.
On the L channel voice output circuit, the drain electrode end of the second metal-oxide-semiconductor V2 links to each other with L channel voice output terminal LOUT1, and source terminal is connected on the power amplifier.
Be provided with the second coupling capacitance C2 between the drain electrode end of the second metal-oxide-semiconductor V2 and the L channel voice output terminal LOUT1, the end of the second coupling capacitance C2 is connected with the drain electrode end of the second metal-oxide-semiconductor V2, and the other end is connected with L channel voice output terminal LOUT1.Connection line at the second coupling capacitance C2 and the second metal-oxide-semiconductor V2 drain electrode end is provided with earth resistance R5.
The second coupling capacitance C2, the direct current signal interference that is used for removing L channel voice output terminal LOUT1 output sound guarantees sound quality.
As a kind of advantageous embodiment of present embodiment 2, be provided with the first resistance R 1 on the connection line of quiet control terminal MUTE_CONTROL and first, second metal-oxide-semiconductor V1, V2 gate terminal.
The first resistance R 1 is conveniently debugged mute circuit.
As a kind of advantageous embodiment of present embodiment 2, be provided with the second resistance R 2 between the drain electrode end of the first metal-oxide-semiconductor V1 and the source terminal; Be provided with the 3rd resistance R 3 between the drain electrode end of the second metal-oxide-semiconductor V2 and the source terminal.
The second resistance R 2, the 3rd resistance R 3 are used for mute circuit is debugged.
During start, motherboard circuit is set to low level with quiet control terminal MUTE_CONTROL first, so that metal-oxide-semiconductor V1, V2 all are in off state, can't arrive power amplifier from the sound of right channel sound lead-out terminal ROUT1 and L channel voice output terminal LOUT1 output, and then realize turn-on muting.
Motherboard circuit normally moves behind 5s~10s, after the pulse that does not have start to power on is disturbed, quiet control terminal MUTE_CONTROL is set to high level, at this moment, metal-oxide-semiconductor V1, V2 all are in conducting state, arrive power amplifier by metal-oxide-semiconductor V1, V2 respectively from the sound of right channel sound lead-out terminal ROUT1 and L channel voice output terminal LOUT1 output, and amplify output by power amplifier, sound is normal.
The mute circuit of addressing in the present embodiment 2, on the voice output circuit, only adopt two coupling capacitance C1, C2 and two metal-oxide-semiconductor V1, V2, be set to low level or be set to high level by the quiet control terminal MUTE_CONTROL with motherboard circuit, control metal-oxide-semiconductor V1, V2 shutoff and conducting operation, the quiet and normal postrun voice output in the time of can conveniently realizing starting shooting.Mute circuit is simple in structure, and convenient by software control, component number is few, has improved the reliability of mute circuit.
Embodiment 3
Television set has by using metal-oxide-semiconductor to realize the mute circuit of start among above-described embodiment 1 or the embodiment 2.Television set is in start process, and metal-oxide-semiconductor turn-offs, and does not have sound to arrive power amplifier, realizes turn-on muting, after the normal startup of television set, and the metal-oxide-semiconductor conducting, sound is normally exported; Mute circuit is simple in structure, reliability is high, increases hardly the manufacturing cost of television set.
Certainly; above-mentioned three embodiment are not to restriction of the present utility model; the utility model also is not limited to enumerate above-described embodiment; should be noted that; those skilled in the art is under the instruction of this specification; any change of making, distortion or replacement form all drop within the essential scope of this specification, ought to be subject to protection of the present utility model.

Claims (10)

1. a mute circuit that uses metal-oxide-semiconductor to realize start comprises audio output circuit and power amplifier, it is characterized in that, at the connection line of audio output circuit and power amplifier first, second metal-oxide-semiconductor is set; The gate terminal of first, second metal-oxide-semiconductor links to each other, and jointly is connected on the quiet control terminal of motherboard circuit.
2. a kind of mute circuit that uses metal-oxide-semiconductor to realize start according to claim 1 is characterized in that described audio output circuit is provided with right channel sound lead-out terminal and L channel voice output terminal.
3. a kind of mute circuit that uses metal-oxide-semiconductor to realize start according to claim 2 is characterized in that the drain electrode end of described the first metal-oxide-semiconductor links to each other with described right channel sound lead-out terminal, and source terminal is connected on the described power amplifier.
4. a kind of mute circuit that uses metal-oxide-semiconductor to realize start according to claim 2 is characterized in that the drain electrode end of described the second metal-oxide-semiconductor links to each other with described L channel voice output terminal, and source terminal is connected on the described power amplifier.
5. a kind of mute circuit that uses metal-oxide-semiconductor to realize start according to claim 3, it is characterized in that, be provided with the first coupling capacitance between the drain electrode end of described the first metal-oxide-semiconductor and the described right channel sound lead-out terminal, one end of the first coupling capacitance is connected with the drain electrode end of the first metal-oxide-semiconductor, and the other end is connected with the right channel sound lead-out terminal.
6. a kind of mute circuit that uses metal-oxide-semiconductor to realize start according to claim 4, it is characterized in that, be provided with the second coupling capacitance between the drain electrode end of described the second metal-oxide-semiconductor and the described L channel voice output terminal, one end of the second coupling capacitance is connected with the drain electrode end of the second metal-oxide-semiconductor, the other end and L channel sound output sub-connection.
7. a kind of mute circuit that uses metal-oxide-semiconductor to realize start according to claim 1 is characterized in that, is provided with the first resistance on the connection line of quiet control terminal and first, second metal-oxide-semiconductor gate terminal.
8. according to claim 1 or 3 or 5 described a kind of mute circuits that use metal-oxide-semiconductor to realize start, it is characterized in that, be provided with the second resistance between the drain electrode end of described the first metal-oxide-semiconductor and the source terminal.
9. according to claim 1 or 4 or 6 described a kind of mute circuits that use metal-oxide-semiconductor to realize start, it is characterized in that, be provided with the 3rd resistance between the drain electrode end of described the second metal-oxide-semiconductor and the source terminal.
10. television set is characterized in that, comprises the mute circuit of realizing start such as each described use metal-oxide-semiconductor of claim 1 to 9.
CN 201220598280 2012-11-12 2012-11-12 Mute circuit realizing starting up by using MOS (metal oxide semiconductor) transistors and television provided with mute circuit Expired - Lifetime CN202907071U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220598280 CN202907071U (en) 2012-11-12 2012-11-12 Mute circuit realizing starting up by using MOS (metal oxide semiconductor) transistors and television provided with mute circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220598280 CN202907071U (en) 2012-11-12 2012-11-12 Mute circuit realizing starting up by using MOS (metal oxide semiconductor) transistors and television provided with mute circuit

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CN202907071U true CN202907071U (en) 2013-04-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103888875A (en) * 2014-03-26 2014-06-25 航天科技控股集团股份有限公司 Built-in loudspeaker sound quality optimizing and amplifying device for vehicle travelling data recorder
CN109982014A (en) * 2019-04-22 2019-07-05 合肥惠科金扬科技有限公司 A kind of driving circuit and television set

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103888875A (en) * 2014-03-26 2014-06-25 航天科技控股集团股份有限公司 Built-in loudspeaker sound quality optimizing and amplifying device for vehicle travelling data recorder
CN109982014A (en) * 2019-04-22 2019-07-05 合肥惠科金扬科技有限公司 A kind of driving circuit and television set
CN109982014B (en) * 2019-04-22 2023-09-29 重庆惠科金扬科技有限公司 Driving circuit and television

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20170215

Address after: 266100 Zhuzhou Road, Laoshan District, Shandong, No. 151, No.

Patentee after: QINGDAO HISENSE ELECTRONICS Co.,Ltd.

Address before: 266100 Zhuzhou Road, Laoshan District, Shandong, No. 151, No.

Patentee before: HISENSE HIVIEW TECH Co.,Ltd.

CP01 Change in the name or title of a patent holder

Address after: 266100 Zhuzhou Road, Laoshan District, Shandong, No. 151, No.

Patentee after: Hisense Visual Technology Co., Ltd.

Address before: 266100 Zhuzhou Road, Laoshan District, Shandong, No. 151, No.

Patentee before: QINGDAO HISENSE ELECTRONICS Co.,Ltd.

CP01 Change in the name or title of a patent holder
CX01 Expiry of patent term

Granted publication date: 20130424

CX01 Expiry of patent term