CN202839628U - Front electrode structure of solar cell - Google Patents
Front electrode structure of solar cell Download PDFInfo
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- CN202839628U CN202839628U CN 201220520795 CN201220520795U CN202839628U CN 202839628 U CN202839628 U CN 202839628U CN 201220520795 CN201220520795 CN 201220520795 CN 201220520795 U CN201220520795 U CN 201220520795U CN 202839628 U CN202839628 U CN 202839628U
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- grid line
- front electrode
- secondary grid
- solar cell
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Abstract
The utility model discloses a front electrode structure of a solar cell. The front electrode structure of the solar cell comprises a crystal silicon wafer, wherein a front electrode is arranged on the front side of the crystal silicon wafer. The front electrode comprises horizontal auxiliary grid lines and two main grid lines, wherein the horizontal auxiliary grid lines are horizontally arranged at intervals, the main grid lines are vertically arranged, and the horizontal auxiliary grid lines and the main grid lines are in vertical connection. A vertical auxiliary grid line is arranged in the middle of the front electrode, wherein the vertical auxiliary grid line is connected with the horizontal auxiliary grid lines, and the two main grid lines are symmetrical relative to the vertical auxiliary grid line. The vertical auxiliary grid line is composed of a plurality vertical auxiliary grid line sections which are arranged at intervals. According to the front electrode structure of the solar cell, the vertical auxiliary grid line is arranged in the middle of the front electrode on the premise that extra main grid lines are not added, and therefore problems of big front electrode resistance caused by long distance between the main grid lines and increasing of the shading area and cost caused by adding of the extra main grid lines are solved. Due to the fact that the vertical auxiliary grid line is divided into a plurality of sections which are arranged at intervals, the problem that the front electrode resistance is increased which is caused by grid line breakpoints appearing during solar cell printing is solved.
Description
Technical field
The utility model relates to a kind of electrode structure of solar cell, particularly a kind of electrode structure at right side of solar cell.
Background technology
Crystal silicon solar energy battery is a kind ofly can effectively absorb solar energy and it is converted into the semiconductor device of electric energy, by being assembled into system, can be used for the generating of various uses.The restriction of current crystal silicon solar energy battery development mainly contains two, lower conversion efficiency and higher cost.Therefore, constantly pursuing higher conversion efficiency is the development priority of current solar cell industry with reducing production costs.
The front electrode of crystal silicon solar energy battery routine forms (as shown in Figure 1) by main grid line and secondary grid line, and secondary grid line is collected the photoelectric current that crystal silicon solar energy battery produces, and the photoelectric current that the main grid line is collected secondary grid line compiles and conducts by welding.The front electrode of crystal silicon solar energy battery is that the mode by silk screen printing forms, the problem that in the process of silk screen printing, has the printing breakpoint, namely the hole owing to the screen printing screens somewhere is plugged, this place does not form electrode after causing printing, form very high resistance at this breakpoint place, cause photoelectric current loss and local pyrexia (hot spot).
In addition, the few crystal silicon solar energy battery of main grid line quantity has less resistance compared to the many crystal silicon solar energy battery of main grid line quantity when the conduction current outside battery, and the electricity that causes is lost still less.But the increase of main grid line quantity can cause the increase of crystal silicon solar energy battery surface shading-area, thereby reduces the area that opto-electronic conversion occurs, and reduces the photoelectric conversion efficiency of battery.
Therefore need a kind of new electrode structure at right side of design, reduce the impact that breakpoint causes, improve the conversion efficiency of crystal silicon solar energy battery.
The utility model of CN202172072U discloses a kind of crystalline silicon solar cell piece electrode structure at right side, comprises crystal silicon chip and the electrode that is arranged on front side of silicon wafer.Front electrode is comprised of two or more main grid line and many secondary grid lines, and the main grid line is equidistant and be arranged in parallel, and is vertical with secondary grid line and link together.The weak point that this patent exists is: the main grid linear distance is larger than the front electrode resistance that long-range guided missile causes.
Summary of the invention
The purpose of this utility model is to provide a kind of electrode structure at right side of solar cell, and the front electrode resistance that solved that the positive electrode resistance that grid line breakpoint that existing solar cell printing occurs causes increases, the main grid linear distance causes than long-range guided missile is large and increase main grid and the increase shading-area that causes and the problem that increases cost.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of electrode structure at right side of solar cell, comprise crystal silicon chip, described crystal silicon chip front is provided with front electrode, described front electrode comprises the horizontal secondary grid line of arranging in the lateral separation and two main grid lines of vertically arranging, horizontal secondary grid line is connected with the main grid line is vertical, described front electrode middle part is provided with vertical secondary grid line, and vertical secondary grid line is connected with horizontal secondary grid line, and two main grid lines are symmetrical arranged about vertical secondary grid line.As preferably, the vertical secondary grid line section that described vertical secondary grid line is arranged by some spacer segments forms, the spacing distance of two sections adjacent vertical secondary grid line sections is identical with the distance of two adjacent horizontal secondary grid lines, and every section vertical secondary grid line section connects two adjacent horizontal secondary grid lines.
The utility model by at front electrode middle part vertical secondary grid line being set, has solved front electrode resistance that the main grid linear distance causes than long-range guided missile large and increase main grid and the increase shading-area that causes and the problem that increases cost under the prerequisite that does not increase the main grid line.Vertical secondary grid line is divided into some sections and be intervally arranged, and has solved like this problem that positive electrode resistance that grid line breakpoint that the solar cell printing occurs causes increases.
As preferably, described main grid line width is 1.6 ± 0.2mm.
As preferably, the distance of described vertical secondary grid line and main grid line is 30.4 ± 0.2mm.
As preferably, be provided with the frame wide with horizontal secondary grid line around the described front electrode.
As preferably, described frame and crystal silicon chip Edge Distance are 1.5 ± 0.1mm.
The beneficial effects of the utility model are:
1, by at the front electrode middle part vertical secondary grid line being set, solved front electrode resistance that the main grid linear distance causes than long-range guided missile large and increase main grid and the increase shading-area that causes and the problem that increases cost, improved the conversion efficiency of crystal silicon solar energy battery, production cost is low.
2, vertical secondary grid line is divided into some sections and be intervally arranged, and has solved the problem that positive electrode resistance that grid line breakpoint that the solar cell printing occurs causes increases, and has improved the conversion efficiency of crystal silicon solar energy battery.
Description of drawings
Fig. 1 is the electrode structure at right side schematic diagram of the crystal silicon solar energy battery of routine;
Fig. 2 is a kind of structural representation of the present utility model.
Among the figure: 1, crystal silicon chip, 2, horizontal secondary grid line, 3, the main grid line, 4, vertical secondary grid line, 5, frame.
Embodiment
Below by specific embodiment, and by reference to the accompanying drawings, the technical solution of the utility model is described in further detail.
Embodiment:
The electrode structure at right side of a kind of solar cell as shown in Figure 2, comprise crystal silicon chip 1, the length and width of crystal silicon chip 1 are 125 ± 0.5mm, described crystal silicon chip 1 front screen printing is brushed with front electrode, described front electrode comprises the horizontal secondary grid line 2 of arranging in the lateral separation and two main grid lines 3 of vertically arranging, main grid line 3 width are 1.6 ± 0.2mm, horizontal secondary grid line 2 and 3 vertical connections of main grid line, there is vertical secondary grid line 4 at described front electrode middle part, article two, main grid line 3 is symmetrical arranged about vertical secondary grid line 4, vertical secondary grid line 4 is 30.4 ± 0.2mm with the distance of main grid line 3, vertical secondary grid line 4 is comprised of the vertical secondary grid line section that multistage is intervally arranged, the spacing distance of two sections adjacent vertical secondary grid line sections is identical with the distance of two adjacent horizontal secondary grid lines 2, and every section vertical secondary grid line section connects two adjacent horizontal secondary grid lines 2.Be provided with the frame 5 wide with horizontal secondary grid line 2 around the front electrode, frame 5 is 1.5 ± 0.1mm with crystal silicon chip 1 Edge Distance.
The utility model is by arranging vertical secondary grid line 4 at the front electrode middle part, main grid line 3 distant front electrode resistance that cause have been solved large and increase main grid and the increase shading-area that causes and the problem that increases cost, improved the conversion efficiency of crystal silicon solar energy battery, production cost is low.Vertical secondary grid line 4 is divided into some sections and be intervally arranged, has solved the problem that positive electrode resistance that grid line breakpoint that the solar cell printing occurs causes increases, improved the conversion efficiency of crystal silicon solar energy battery.
Above-described embodiment is a kind of better scheme of the present utility model, is not that the utility model is done any pro forma restriction, also has other variant and remodeling under the prerequisite that does not exceed the technical scheme that claim puts down in writing.
Claims (6)
1. the electrode structure at right side of a solar cell, comprise crystal silicon chip (1), it is characterized in that: described crystal silicon chip (1) front is provided with front electrode, described front electrode comprises the horizontal secondary grid line (2) of arranging the lateral separation and two main grid lines (3) of vertically arranging, horizontal secondary grid line (2) and vertical connection of main grid line (3), described front electrode middle part is provided with vertical secondary grid line (4), vertical secondary grid line (4) is connected with horizontal secondary grid line (2), and two main grid lines (3) are symmetrical arranged about vertical secondary grid line (4).
2. the electrode structure at right side of a kind of solar cell according to claim 1, it is characterized in that: the vertical secondary grid line section that described vertical secondary grid line (4) is arranged by some spacer segments forms, the spacing distance of two sections adjacent vertical secondary grid line sections is identical with the distance of adjacent two horizontal secondary grid lines (2), and every section vertical secondary grid line section connects two adjacent horizontal secondary grid lines (2).
3. the electrode structure at right side of a kind of solar cell according to claim 1 and 2, it is characterized in that: described main grid line (3) width is 1.6 ± 0.2mm.
4. the electrode structure at right side of a kind of solar cell according to claim 1 and 2 is characterized in that: described vertical secondary grid line (4) is 30.4 ± 0.2mm with the distance of main grid line (3).
5. the electrode structure at right side of a kind of solar cell according to claim 1 and 2 is characterized in that: be provided with the frame (5) wide with horizontal secondary grid line (2) around the described front electrode.
6. the electrode structure at right side of a kind of solar cell according to claim 5 is characterized in that: described frame (5) is 1.5 ± 0.1mm with crystal silicon chip (1) Edge Distance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220520795 CN202839628U (en) | 2012-10-12 | 2012-10-12 | Front electrode structure of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220520795 CN202839628U (en) | 2012-10-12 | 2012-10-12 | Front electrode structure of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202839628U true CN202839628U (en) | 2013-03-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220520795 Expired - Fee Related CN202839628U (en) | 2012-10-12 | 2012-10-12 | Front electrode structure of solar cell |
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| Country | Link |
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| CN (1) | CN202839628U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091841A (en) * | 2013-04-02 | 2014-10-08 | 浙江鸿禧光伏科技股份有限公司 | Gate line structure of solar cell |
| CN104377255A (en) * | 2014-11-28 | 2015-02-25 | 浙江鸿禧能源股份有限公司 | Grid line designing method capable of reducing current loss |
| US10069019B2 (en) | 2014-10-31 | 2018-09-04 | Byd Company Limited | Solar cell unit, solar cell array, solar cell module and manufacturing method thereof |
-
2012
- 2012-10-12 CN CN 201220520795 patent/CN202839628U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091841A (en) * | 2013-04-02 | 2014-10-08 | 浙江鸿禧光伏科技股份有限公司 | Gate line structure of solar cell |
| US10069019B2 (en) | 2014-10-31 | 2018-09-04 | Byd Company Limited | Solar cell unit, solar cell array, solar cell module and manufacturing method thereof |
| US10193003B2 (en) | 2014-10-31 | 2019-01-29 | Byd Company Limited | Solar cell unit, solar cell array, solar cell module and manufacturing method thereof |
| US10381493B2 (en) | 2014-10-31 | 2019-08-13 | Byd Company Limited | Solar cell unit, solar cell array, solar cell module and manufacturing method thereof |
| US10529868B2 (en) | 2014-10-31 | 2020-01-07 | Byd Company Limited | Solar cell array, solar cell module and manufacturing method thereof |
| CN104377255A (en) * | 2014-11-28 | 2015-02-25 | 浙江鸿禧能源股份有限公司 | Grid line designing method capable of reducing current loss |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130327 Termination date: 20201012 |